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Articoli di riviste sul tema "Defects, silicon"

Autore: Grafiati
Pubblicato: 4 giugno 2021
Ultima modifica: 8 febbraio 2022

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1

Zhang, Dingyou, Sarasvathi Thangaraju, Daniel Smith, Himani Kamineni, Christian Klewer, Mark Scholefield, Ming Lei et al. "A New Type of TSV Defect Caused by BMD in Silicon Substrate". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, DPC (1 gennaio 2014): 001506–22. http://dx.doi.org/10.4071/2014dpc-wp14.

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This paper reports on a new type of through-silicon via (TSV) defect, silicon fin defect, which was found after TSV deep-reactive-ion-etching (DRIE) process for TSV integration with front-end-of-line (FEOL) devices. One possible root cause for this defect is that the bulk micro defect (BMD) in silicon substrate serves as a micro-mask during etching and results in silicon fin defects at TSV bottom. These defects have to be eliminated as they are killer TSV defects for several reasons: (1) could serve as a weak point for isolation liner deposition; (2) could be a weak point for barrier/seed layer deposition; and (3) may cause mechanical failures during TSV backside reveal. Previously, silicon fin defects were removed by switching to a non-BMD silicon substrate for interposer application. However, for TSV integration with FEOL devices, the BMD layer serves as an intrinsic gettering layer for devices, therefore, it cannot be removed from the silicon substrate, which makes it challenging to get rid of silicon fin defects. In order to establish a non-destructive in-line detection method of the fin defects, scanning electron microscope (SEM) automatic process inspection (API) was set up to image the fin defects at the bottom of the trench. A special working point with high depth of focus (DoF) and contrast was created to obtain good top-down SEM imaging of the defects at the bottom of this high-aspect-ratio (HAR) structure. Three types of silicon substrates (A, B, and C) were used for this study to investigate the potential root cause. SEM API results show defect rates of 20%, 3.3% and 0% for substrates A, B, and C, respectively. This is in good agreement with both BMD simulation results and benchmarking data in which substrates A, B, and C had normalized BMD densities of 11.7, 5.74, and 1 cm-3, respectively, with a comparable BMD size of 80~90 nm and a denuded zone (DNZ) depth of 10~15 μm. The correlation between BMD density in a silicon substrate and silicon fin defect rate indicates that BMD is a key root cause for silicon fin defects. To eliminate silicon fin defects, an optimized DRIE process has been developed. On the same type of substrate, the DRIE process with a typical voltage bias results in a defect rate of 6.7%, while no silicon fin defect was detected out of 200 TSVs with a polynomial bias ramp to relatively higher final voltage bias during the last 15 μm etch. The hypothesis is that higher voltage bias is able to sputter away BMD and shows potential to get rid of the silicon fin defects at the TSV bottom. In summary, a capable inspection method, a preferred silicon substrate with BMD spec range, and a promising way for DRIE process optimization to eliminate the silicon fin defect at the TSV bottom have been identified and developed in this work. Detailed results and analysis, particularly the fin defect images, statistical inspection results, BMD benchmarking data, simulation results, and TSV profile with optimized process will be discussed in the paper.
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Ivanova, Ekaterina V., e M. V. Zamoryanskaya. "Investigation of Point Defects Modification in Silicon Dioxide by Cathodoluminescence". Solid State Phenomena 205-206 (ottobre 2013): 457–61. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.457.

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The aim of this work is study of point defects modification in silicon dioxide by a high power density electron beam. In this work we used the method which allows to estimate quantitative content of luminescent point defects by dependence of cathodoluminescence on current density. Content of point defects was evaluated and changing of point defect content in silicon dioxide under electron beam was assessed. It is shown that content of defect connected with silicon deficit decreases whereas content of defect connected with oxygen deficit increases. The model of point defects transformation was suggested on the basis of these results.
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Tersoff, J. "Carbon defects and defect reactions in silicon". Physical Review Letters 64, n. 15 (9 aprile 1990): 1757–60. http://dx.doi.org/10.1103/physrevlett.64.1757.

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Fowler, W. Beall, e Arthur H. Edwards. "Defects and defect processes in silicon dioxide". Radiation Effects and Defects in Solids 146, n. 1-4 (ottobre 1998): 11–25. http://dx.doi.org/10.1080/10420159808220277.

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Hens, Philip, Julian Müller, Günter Wagner, Rickard Liljedahl, Erdmann Spiecker e Mikael Syväjärvi. "Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation". Materials Science Forum 740-742 (gennaio 2013): 283–86. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.283.

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In this paper we present a concept on the defect generation and annihilation during the homoepitaxial growth step of cubic silicon carbide by sublimation epitaxy on templates grown by chemical vapor deposition on silicon substrates. Several structural defects like stacking faults, twins and star defects show opposite evolution from the template layer into the sublimation grown material. While single planar defects tend to annihilate with increasing layer thickness, the defect clusters assigned to the star defects are enlarging. These issues contribute to a balance of how to achieve the best possible quality on thick layers.
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Macdonald, Daniel, Prakash N. K. Deenapanray, Andres Cuevas, S. Diez e Stephan W. Glunz. "The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon". Solid State Phenomena 108-109 (dicembre 2005): 497–502. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.497.

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Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually triggered by illumination. Despite its importance in photovoltaic materials, the chemical make-up of the defect remains unclear. In this paper we examine whether the presence of excess silicon self-interstitials, introduced by ion-implantation, affects the formation of the defects under illumination. The results reveal that there is no discernible change in the carrier-induced defect concentration, although there is evidence for other defects caused by interactions between interstitials and oxygen. The insensitivity of the carrier-induced defect formation to the presence of silicon interstitials suggests that neither interstitials themselves, nor species heavily affected by their presence (such as interstitial boron), are likely to be involved in the defect structure, consistent with recent theoretical modelling.
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Schriefl, Andreas J., Sokratis Sgouridis, Werner Schustereder e Werner Puff. "Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon". Solid State Phenomena 178-179 (agosto 2011): 319–24. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.319.

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The microscopic nature of hydrogen decorated defect complexes created by proton implantation in silicon and subsequental annealing is not well understood yet. We investigated the defects and donator complexes using positron lifetime measurements and Doppler-broadening spectroscopy. In particular, the influence of variations in implantation dose, annealing temperature and annealing time on crystal defects were examined in Czochralski and in float zone silicon samples. Due to well known positron lifetimes in silicon an identification of certain defect complexes was possible.
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Vlaskina, S. I. "Nanostructures in lightly doped silicon carbide crystals with polytypic defects". Semiconductor Physics Quantum Electronics and Optoelectronics 17, n. 2 (30 giugno 2014): 155–59. http://dx.doi.org/10.15407/spqeo17.02.155.

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9

Gali, Adam, T. Hornos, M. Bockstedte e Thomas Frauenheim. "Point Defects and their Aggregation in Silicon Carbide". Materials Science Forum 556-557 (settembre 2007): 439–44. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.439.

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The existence of point defects is one of the key problems in SiC technology. Combined experimental and theoretical investigations can be successful in identification of point defects. We report the identification of a basic intrinsic defect in p-type SiC. In addition, we predict the existence of interstitial-related electrically active defects which may be detected by experimental tools.
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Gali, Adam. "Excitation Properties of Silicon Vacancy in Silicon Carbide". Materials Science Forum 717-720 (maggio 2012): 255–58. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.255.

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Isolated point defects possessing high spin ground state and below-band-gap excitation may play a key role in realizing solid state quantum bits in semiconductors which are the basic building blocks of quantum computers. Silicon vacancy in silicon carbide provides these features making it a feasible candidate in this special and emerging field of science. However, it has been not clarified what is the exact nature of the luminescence of silicon vacancy detected in hexagonal polytypes. This is the first crucial step needed to understand this basic defect in silicon carbide. We report density functional theory based calculations on silicon vacancy defect. Based on the obtained results we identify the silicon vacancy related photoluminescence signals with the negatively charged defect.
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11

Pantelides, Sokrates T. "Defects in Amorphous Silicon". Materials Science Forum 38-41 (gennaio 1991): 249–56. http://dx.doi.org/10.4028/www.scientific.net/msf.38-41.249.

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12

Watkins, George D. "Intrinsic defects in silicon". Materials Science in Semiconductor Processing 3, n. 4 (agosto 2000): 227–35. http://dx.doi.org/10.1016/s1369-8001(00)00037-8.

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13

RITTER, STEVE. "SILICON CARBIDE WITHOUT DEFECTS". Chemical & Engineering News 82, n. 35 (30 agosto 2004): 6. http://dx.doi.org/10.1021/cen-v082n035.p006.

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14

Clark, C. D., H. Kanda, I. Kiflawi e G. Sittas. "Silicon defects in diamond". Physical Review B 51, n. 23 (15 giugno 1995): 16681–88. http://dx.doi.org/10.1103/physrevb.51.16681.

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15

Wang, R. P. "Defects in silicon nanowires". Applied Physics Letters 88, n. 14 (3 aprile 2006): 142104. http://dx.doi.org/10.1063/1.2191830.

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16

Schindler, R., e A. Räuber. "Defects in Multicrystalline Silicon". Solid State Phenomena 19-20 (gennaio 1991): 341–52. http://dx.doi.org/10.4028/www.scientific.net/ssp.19-20.341.

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17

Weng-Sieh, Z., P. Krulevitch, R. Gronsky e G. C. Johnson. "Stress-induced formation of structural defects on the {311} planes of silicon". Journal of Materials Research 9, n. 8 (agosto 1994): 2057–65. http://dx.doi.org/10.1557/jmr.1994.2057.

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Structural defects occurring on the {311} planes of single crystal silicon have been observed near the bottom oxide corner in silicon-on-insulator structures formed by selective epitaxial growth. These {311} defects exhibit a preferential orientation and are clustered near the silicon/silicon dioxide interface. This new observation provides an opportunity to study the mechanism of {311} defect generation in a system with discernible microstructure and stress state. High resolution electron microscopy combined with analytical and numerical three-dimensional stress modeling are used to show the dependence of these {311} defects on the local stress field, and to establish their origin in terms of a homogeneous dislocation nucleation model.
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18

Dyakonov, Vladimir, Hannes Kraus, V. A. Soltamov, Franziska Fuchs, Dmitrij Simin, Stefan Vaeth, Andreas Sperlich, Pavel Baranov e G. Astakhov. "Atomic-Scale Defects in Silicon Carbide for Quantum Sensing Applications". Materials Science Forum 821-823 (giugno 2015): 355–58. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.355.

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Atomic-scale defects in silicon carbide exhibit very attractive quantum properties that can be exploited to provide outstanding performance in various sensing applications. Here we provide the results of our studies of the spin-optical properties of the vacancy related defects in SiC. Our studies show that several spin-3/2 defects in silicon carbide crystal are characterized by nearly temperature independent axial crystal fields, which makes these defects very attractive for vector magnetometry. The zero-field splitting of another defect exhibits on contrast a giant thermal shift of 1.1 MHz/K at room temperature, and can be used for temperature sensing applications.
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19

Kim, M. J., e R. W. Carpenter. "TEM study of gold precipitation on defects in silicon". Proceedings, annual meeting, Electron Microscopy Society of America 45 (agosto 1987): 240–41. http://dx.doi.org/10.1017/s042482010012610x.

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For several decades efforts have been made to investigate the roles of gold in silicon-based solid state device technology. It has been recognized that gold acts as a carrier lifetime controller due to its ability to provide recombination centers when it was introduced into silicon from the surface at high temperature via the so-called kick-out diffusion mechanism. It also has been reported that gold is more soluble in a silicon wafer with high dislocation density, and it can be gettered by diffusing phosphorus or by creating an area of high defect density. However, even though all the previous investigations predict the segregation of gold on defects in silicon it is still unclear how it precipitates on defects. Furthermore, no direct observation of such gold preciptates on defects has been made yet.
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20

Yu, Dongling, Huiling Zhang, Xiaohui Zhang, Dahai Liao e Nanxing Wu. "Si3N4 Ceramic Ball Surface Defects’ Detection Based on SWT and Nonlinear Enhancement". Mathematical Problems in Engineering 2021 (13 settembre 2021): 1–9. http://dx.doi.org/10.1155/2021/4922315.

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In order to improve the detection accuracy and efficiency of silicon nitride ceramic ball surface defects, a defect detection algorithm based on SWT and nonlinear enhancement is proposed. In view of the small surface defect area and low contrast of the silicon nitride ceramic ball, a machine vision-based nondestructive inspection system for surface images is constructed. Sobel operation is used to eliminate the nonuniform background, and the silicon nitride ceramic ball surface image is decomposed by SWT. And frequency-domain index low-pass filtering is used to modify the decomposition coefficients, and an adaptive nonlinear model is proposed to enhance defects; finally, the image is reconstructed and segmented by the stationary wavelet inverse transform and the dynamic threshold method, respectively. The enhanced algorithm can effectively identify surface defects and is superior to traditional defect detection algorithms.
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21

Hallam, Brett J., Alison M. Ciesla, Catherine C. Chan, Anastasia Soeriyadi, Shaoyang Liu, Arman Mahboubi Soufiani, Matthew Wright e Stuart Wenham. "Overcoming the Challenges of Hydrogenation in Silicon Solar Cells". Australian Journal of Chemistry 71, n. 10 (2018): 743. http://dx.doi.org/10.1071/ch18271.

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The challenges of passivating defects in silicon solar cells using hydrogen atoms are discussed. Atomic hydrogen is naturally incorporated into conventional silicon solar cells through the deposition of hydrogen-containing dielectric layers and the metallisation firing process. The firing process can readily passivate certain structural defects such as grain boundaries. However, the standard hydrogenation processes are ineffective at passivating numerous defects in silicon solar cells. This difficulty can be attributed to the atomic hydrogen naturally occupying low-mobility and low-reactivity charge states, or the thermal dissociation of hydrogen–defect complexes. The concentration of the highly mobile and reactive neutral-charge state of atomic hydrogen can be enhanced using excess carriers generated by light. Additional low-temperature hydrogenation processes implemented after the conventional fast-firing hydrogenation process are shown to improve the passivation of difficult structural defects. For process-induced defects, careful attention must be paid to the process sequence to ensure that a hydrogenation process is included after the defects are introduced into the device. Defects such as oxygen precipitates that form during high-temperature diffusion and oxidation processes can be passivated during the subsequent dielectric deposition and high-temperature firing process. However, for laser-based processes performed after firing, an additional hydrogenation process should be included after the introduction of the defects. Carrier-induced defects are even more challenging to passivate, and advanced hydrogenation methods incorporating minority carrier injection must be used to induce defect formation first, and, second, provide charge state manipulation to enable passivation. Doing so can increase the performance of industrial p-type Czochralski solar cells by 1.1 % absolute when using a new commercially available laser-based advanced hydrogenation tool.
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Beall Fowler, W. "Theory of defects and defect processes in silicon dioxide". Journal of Non-Crystalline Solids 222, n. 1-2 (11 dicembre 1997): 33–41. http://dx.doi.org/10.1016/s0022-3093(97)00350-5.

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Beall Fowler, W., e A. H. Edwards. "Theory of defects and defect processes in silicon dioxide". Journal of Non-Crystalline Solids 222 (dicembre 1997): 33–41. http://dx.doi.org/10.1016/s0022-3093(97)90094-6.

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Severino, Andrea, Corrado Bongiorno, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, F. Portuese, Gaetano Foti e Francesco La Via. "Carbonization Study of Different Silicon Orientations". Materials Science Forum 556-557 (settembre 2007): 171–74. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.171.

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3C-SiC/Si heteroepitaxy is hampered by large mismatches in lattice parameters (19.7%) and thermal expansion coefficient (8%) leading to 3C-SiC films containing high defects density. To reduce the presence of defects, a multi-step growth process in a CVD reactor is used. The aim of the work is to study the effect of carbonization on differently oriented Si surfaces, experiencing a 200°C-wide temperature range in a CVD reactor, to improve the crystalline quality. TEM analysis are carried out to evaluate thickness, crystal orientations and defects of carbonized layers with respect to the time-dependence of the process and to the different orientations of the Si substrate. It will be shown that process-related defects are strictly correlated to the substrate orientation either for size, density, occupied area, shape or thickness. Uniform, flat and crystalline thin SiC films are obtained with a low defect density.
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Kharchenko, V. A. "The getters in silicon". Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 21, n. 1 (22 giugno 2019): 5–17. http://dx.doi.org/10.17073/1609-3577-2018-1-5-17.

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The processes of gettering of fast-diffusing metal impurities and structure defects in silicon, mainly used in the production of integrated circuits, power high-voltage devices, nuclear-doped silicon, are considered. The getters based on structural defects and gas-phase getters based on chlorine-containing compounds are analyzed. It is noted that for the formation of getters on the basis of structural defects, it is necessary to create internal sources for generation of dislocations and formation of precipitate — dislocation clusters. It is shown that dislocations are generated in the mouths of microfractures, which then form a sedentary dislocation grid on the non-working side of the plates. In the second case, defects are created in the area of the plate adjacent to the active layer of the electronic component. The process of creating an internal getter is based on the decomposition of a supersaturated solid oxygen solution in silicon, due to which a complex defect medium consisting of various precipitate-dislocation clusters is formed in the crystal. The packing defect as oxide precipitate with a cloud of Frank’s loops is formed. Two variants of creating an internal getter are considered — first is associated with the distillation of an oxygen impurity from the near-surface region of the plate, the second is associated with a fine adjustment of the distribution of vacancies along the plate thickness. The analysis of the influence of the getter as the defect structure reducing the magnitude of mechanical stress of the beginning of the generation of dislocations, which ultimately can determine the mechanical strength of the silicon wafer.This paper also considers the mechanism of gas-phase medium impurities and defects gettering with the addition of chlorine-containing compounds. It is shown that at elevated temperatures, due to the interaction of silicon atoms with chlorine in the near-surface region of the plate, it is possible to create vacancies that penetrate the sample volume with some probability. As a result, the case DСv > 0, DCi £ 0 is realized, that leads to a change in the composition of microdefects and their density. The examples of practical application of heat treatment in chlorine-containing atmosphere silicon wafer during application of the oxide film, in the case of the target the need for dissolution of the microdefects and of the withdrawal of fast diffusing impurities from the crystal volume, and to prevent the formation of generation-recombination centers in the manufacturing process of devices and in a nuclear doping silicon.
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Bracher, David O., Xingyu Zhang e Evelyn L. Hu. "Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center". Proceedings of the National Academy of Sciences 114, n. 16 (3 aprile 2017): 4060–65. http://dx.doi.org/10.1073/pnas.1704219114.

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Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light–matter interface both to augment the defect emission and to aid in studying the defects’ properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.
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Weber, William J., Fei Gao, Ram Devanathan, Weilin Jiang e Y. Zhang. "Defects and Ion-Solid Interactions in Silicon Carbide". Materials Science Forum 475-479 (gennaio 2005): 1345–50. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1345.

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Atomic-level simulations are used to determine defect production, cascade-overlap effects, and defect migration energies in SiC. Energetic C and Si collision cascades primarily produce single interstitials, mono-vacancies, antisite defects, and small defect clusters, while amorphous clusters are produced within 25% of Au cascades. Cascade overlap results in defect stimulated cluster growth that drives the amorphization process. The good agreement of disordering behavior and changes in volume and elastic modulus obtained computationally and experimentally provides atomic-level interpretation of experimentally observed features. Simulations indicate that close-pair recombination activation energies range from 0.24 to 0.38 eV, and long-range migration energies for interstitials and vacancies are determined.
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Zhou, Gang, Ye Tian, Shuai Xue, Guangqi Zhou, Ci Song, Lin Zhou, Guipeng Tie, Feng Shi, Yongxiang Shen e Zhe Zhu. "Enhancement of the Load Capacity of High-Energy Laser Monocrystalline Silicon Reflector Based on the Selection of Surface Lattice Defects". Materials 13, n. 18 (19 settembre 2020): 4172. http://dx.doi.org/10.3390/ma13184172.

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Various defects during the manufacture of a high-energy laser monocrystalline silicon reflector will increase the energy absorption rate of the substrate and worsen the optical properties. Micron-scale or larger manufacturing defects have been inhibited by mechanism study and improvement in technology, but the substrate performance still fails to satisfy the application demand. We focus on the changes in the optical properties affected by nanoscale and Angstrom lattice defects on the surface of monocrystalline silicon and acquire the expected high reflectivity and low absorptivity through deterministic control of its defect state. Based on the first principles, the band structures and optical properties of two typical defect models of monocrystalline silicon—namely, atomic vacancy and lattice dislocation—were analyzed by molecular dynamics simulations. The results showed that the reflectivity of the vacancy defect was higher than that of the dislocation defect, and elevating the proportion of the vacancy defect could improve the performance of the monocrystalline silicon in infrared (IR) band. To verify the results of simulations, the combined Ion Beam Figuring (IBF) and Chemical Mechanical Polishing (CMP) technologies were applied to introduce the vacancy defect and reduce the thickness of defect layer. After the process, the reflectivity of the monocrystalline silicon element increased by 5% in the visible light band and by 12% in the IR band. Finally, in the photothermal absorption test at 1064 nm, the photothermal absorption of the element was reduced by 80.5%. Intense laser usability on the monocrystalline silicon surface was achieved, and the effectiveness and feasibility of deterministic regulation of optical properties were verified. This concept will be widely applied in future high-energy laser system and X-ray reflectors.
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Mueller, Martin Guillermo, M. Fornabaio e A. Mortensen. "Silicon particle pinhole defects in aluminium–silicon alloys". Journal of Materials Science 52, n. 2 (19 settembre 2016): 858–68. http://dx.doi.org/10.1007/s10853-016-0381-y.

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Goh, Felicia, Christopher Lim, Vincent Sih, Zainab Ismail e Simon Y. M. Chooi. "Occurrence of Arsenic-Based Defects and Techniques for Their Elimination". Solid State Phenomena 103-104 (aprile 2005): 87–92. http://dx.doi.org/10.4028/www.scientific.net/ssp.103-104.87.

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Arsenic based defects were found on the surfaces of advanced CMOS patterned wafers after the pre-silicidation HF clean. Investigations into the mechanism of formation were done using representative As-implanted bare silicon, polysilicon and HDP silicon oxide films. The nature and composition of these As-based defects are believed to be arsenic and arsenic oxide. Methods of defect removal include the application of hydrogen peroxide containing solutions and hydrogen plasma dry cleaning.
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Kharchenko, Vyacheslav A. "Getters in silicon". Modern Electronic Materials 5, n. 1 (1 marzo 2019): 1–11. http://dx.doi.org/10.3897/j.moem.5.1.38575.

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Gettering of rapidly diffusing metallic impurities and structural defects in silicon which is the main material for IC fabrication, high-power high-voltage devices and neutron doped silicon has been studied. Structural defect based getters and gas phase getters based on chlorine containing compounds have been analyzed. Formation of structural defect based getters requires producing intrinsic sources of dislocation generation and precipitate/dislocation agglomerate formation. We show that dislocations are generated at microcrack mouths and form a low-mobility dislocation network at inactive wafer sides. In the latter case the defects are generated in the wafer region adjacent to the active layer of the electronic component. The generation of intrinsic getters is based on the decomposition of the supersaturated oxygen solid solution in silicon which favors the formation of a complex defect system in silicon that consists of various precipitate/dislocation agglomerates. Stacking faults also form, i.e., oxide precipitates with Frank’s dislocation loop clouds. Two intrinsic getter formation methods have been considered: one is related to oxygen impurity drain from the wafer surface region and the other implies accurate control of vacancy distribution over wafer thickness. We have analyzed the effect of getters as defect structures on the reduction of the mechanical stress required for dislocation generation onset which may eventually determine the mechanical strength of silicon wafers. The mechanism of impurity and defect gettering by gas phase medium with chlorine-containing compound additions has been considered. We show that silicon atom interaction with chlorine in the surface wafer region at high temperatures may cause the formation of vacancies which may penetrate to the specimen bulk with some probability. This leads to the case ∆Сv > 0 and ∆Ci ≤ 0, which changes the composition and density of the microdefects. Examples have been given for practical use of heat treatment of silicon wafers in a chlorine-containing atmosphere during oxide film application with the aim to dissolve microdefects, drain rapidly diffusing impurities from crystal bulk and prevent the formation of generation/recombination centers during device fabrication and silicon neutron doping.
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Škarvada, Pavel, Lubomír Grmela e Pavel Tománek. "Advanced Local Quality Assessment of Monocrystalline Silicon Solar Cell Efficiency". Key Engineering Materials 465 (gennaio 2011): 239–42. http://dx.doi.org/10.4028/www.scientific.net/kem.465.239.

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Solar cells, or photovoltaic cells, are used to convert sunlight into electrical power. The defects or imperfections in silicon solar cells lower the light-current conversion and consequently also an efficiency of the device. These defects in the semiconductor structure are normally detected by electric measurements. The thermal dependency of breakdown voltage is positive and the defects can be revealed by surface inhomogenity. To ensure a higher quality of the solar cells, advanced local quality assessment is provided and experimental results of solar cell defect measurement in microscale region are presented. Using Near-field optical beam induced current and voltage method, both current and voltage in defect area were detected and individual defects were localized with higher spatial resolution. This measurement also verifies that in reverse biased electroluminescence spots the quantum efficiency is lower and so these spots affect overall quality of the cell.
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33

Futatsudera, M., T. Kimura, A. Matsumoto, T. Inokuma, Y. Kurata e S. Hasegawa. "Defects in silicon oxynitride films". Thin Solid Films 424, n. 1 (gennaio 2003): 148–51. http://dx.doi.org/10.1016/s0040-6090(02)00917-3.

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34

Bergman, J. P., L. Storasta, F. H. C. Carlsson, S. Sridhara, B. Magnusson e E. Janze’n. "Defects in 4H silicon carbide". Physica B: Condensed Matter 308-310 (dicembre 2001): 675–79. http://dx.doi.org/10.1016/s0921-4526(01)00790-6.

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35

Estreicher, Stefan K. "Copper-related defects in silicon". Physica B: Condensed Matter 273-274 (dicembre 1999): 424–28. http://dx.doi.org/10.1016/s0921-4526(99)00496-2.

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36

SERAPHIN, S. "Defects in oxygen implanted silicon". Solar Energy Materials and Solar Cells 32, n. 4 (aprile 1994): 343–49. http://dx.doi.org/10.1016/0927-0248(94)90098-1.

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37

Frehill, C. A., M. O. Henry, E. McGlynn, E. C. Lightowlers e A. Safanov. "Cadmium–lithium defects in silicon". Materials Science and Engineering: B 58, n. 1-2 (febbraio 1999): 159–62. http://dx.doi.org/10.1016/s0921-5107(98)00291-8.

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38

Needels, M., M. Schlüter e M. Lannoo. "Erbium point defects in silicon". Physical Review B 47, n. 23 (15 giugno 1993): 15533–36. http://dx.doi.org/10.1103/physrevb.47.15533.

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39

Sutherland, Brandon R. "Silicon Contact Defects Get Fired". Joule 2, n. 10 (ottobre 2018): 1922–23. http://dx.doi.org/10.1016/j.joule.2018.10.001.

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40

den Hertog, M. I., C. Cayron, P. Gentile, F. Dhalluin, F. Oehler, T. Baron e J. L. Rouviere. "Hidden defects in silicon nanowires". Nanotechnology 23, n. 2 (14 dicembre 2011): 025701. http://dx.doi.org/10.1088/0957-4484/23/2/025701.

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41

Knack, S. "Copper-related defects in silicon". Materials Science in Semiconductor Processing 7, n. 3 (2004): 125–41. http://dx.doi.org/10.1016/j.mssp.2004.06.002.

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42

Gibbons, T. M., D. J. Backlund e S. K. Estreicher. "Cobalt-related defects in silicon". Journal of Applied Physics 121, n. 4 (28 gennaio 2017): 045704. http://dx.doi.org/10.1063/1.4975034.

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43

Roccaforte, Fabrizio, Salvatore di Franco, Filippo Giannazzo, Francesco La Via, Sebania Libertino, Vito Raineri, Mario Saggio e Edoardo Zanetti. "Silicon Carbide: Defects and Devices". Solid State Phenomena 108-109 (dicembre 2005): 663–70. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.663.

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In this paper, some basic aspects related to defects and SiC devices performances are discussed. Our recent work is reviewed and inserted in the international research scenario. In particular, some issues relative to rectifying metal/SiC contacts will be treated in more detail. In fact, establishing a correlation between material defects, processing induced defects and irradiation induced defects with the electrical behaviour of Schottky contacts is extremely important for the future optimization of almost all electronic devices, sensors and particle detectors.
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44

Chantre, A. "Metastable Defects in Silicon". MRS Proceedings 104 (1987). http://dx.doi.org/10.1557/proc-104-37.

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ABSTRACTOriginally discovered in compound semiconductors, metastability is now being observed for many defects in silicon as well. Simple considerations indeed suggest the existence of alternate, metastable configurations for ab large variety of defect complexes, even as simple as ionic pairs. Techniques to isolate these excited defect configurations are also now well established, and being used routinely in a number of laboratories. This paper will review the recent achievements in this field. Selected examples will be described to illustrate the status of research on metastable defects in silicon.
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45

CHRENKO, R. M., L. J. SCHOWALTER, E. L. HALL e N. LEWIS. "DEFECTS IN MBE SILICON". MRS Proceedings 56 (1985). http://dx.doi.org/10.1557/proc-56-27.

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AbstractA study of defects that are observed in Si MBE layers under certain growth conditions is reported. Optical microscopy examinations of unetched and etched layers reveal particle-like defects of micron size, stacking faults, dislocations, and saucer pits. TEM shows interfacial defects of tens of Angstroms size at the substrate-epitaxial layer interface. Reproducible defect densities are given for various in-situ cleaning procedures.
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46

Itsumi, Manabu. "Octahedral Void Defects Causing Gate-Oxide Defects In Moslsis". MRS Proceedings 442 (1996). http://dx.doi.org/10.1557/proc-442-95.

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AbstractWe found oxide defects originating in standard Czochralski silicon and proposed the sacrificial oxidation method to eliminate these defects in about 1979. Later, N2 annealing and H2 annealing methods were proposed successively, and these three elimination methods have been successfully introduced into actual fabrication lines for highly reliable integrated circuits. However, the origin of the defect was not clarified until recently. We combined copper decoration and TEM in order to observe the origin of the oxide defects and for the first time, observed octahedral void defects systematically at the oxide defects with standard Czochralski silicon. The sizes of the defects are typically 0.1–0.2 microns. These Si-crystalline defects are the origin of oxide defects and, at the same time, may be the origin of crystal originated particles. Recently, we have observed octahedral void defects in the bulk of the standard Czochralski silicon too. Some experimental findings suggest that some impurities on the side wall of the octahedral void defect induce dielectric breakdown of the gate-oxides.
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47

Whitaker, J., J. Viner, S. Zukotynski, E. Johnson, P. C. Taylor e P. Stradins. "Tritium Induced Defects in Amorphous Silicon". MRS Proceedings 808 (2004). http://dx.doi.org/10.1557/proc-808-a2.4.

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ABSTRACTWe report the growth of tritium induced defects in tritium doped hydrogenated amorphous silicon (a-Si:H,T) as measured by electron spin resonance (ESR) and photothermal deflection spectroscopy (PDS). The measurements allow one to examine the accumulation of defects in a-Si:H,T where the defect production mechanism is known. Defects produced by tritium decay are found to be much less numerous than the number of decayed tritium atoms and they are metastable like Staebler-Wronski defects. These results provide new insight into the metastable defect creation and the role of hydrogen motion.
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48

Wagner, P., M. Brohl, D. Gräf e U. Lambert. "Surfaces and Crystal Defects of Silicon". MRS Proceedings 378 (1995). http://dx.doi.org/10.1557/proc-378-17.

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AbstractBulk crystal defects are accessible for investigation when silicon crystals are sliced and the defects occur close to or at the surface of wafers. Such near-surface defects can then be delineated by modifying some processes used for preparing clean, polished wafers. The delineated defects usually occur as pits the shape of which depends on the delineation process used. The different shapes of the pits has consequences for their detection by light scattering techniques (laser scanners or surface inspection systems). The density of the such generated surface defects is related to the defect density in the crystal bulk and is influenced by the growth parameters. These surface defects therefore provide a means for studying and for characterizing the bulk defect density.
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49

Palm, J., e L. C. Kimerling. "Defects and Future Silicon Technology". MRS Proceedings 378 (1995). http://dx.doi.org/10.1557/proc-378-703.

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AbstractThe interaction between device technology and the control of defects has been strong since the first transistor. The rapid and unparalled development of this technology can be monitored by changes in device size and process complexity, or reciprocally, in defect density. In the future the emphasis on computation functionality will shift to imaging and learning. In addition high volume manufacturing will cast an emphasis on capital cost, yield, effluent control and safety. These foci require the development of new sensitive defect assessment tools, the modelling of complex defect systems and the understanding of defect properties on the atomic scale. We shall illustrate this interplay between technology and materials science by topics in ULSI circuits, silicon photovoltaics and silicon microphotonics. For ULSI the control of both bulk and surface defects is decisive. The physical chemistry at the silicon surface plays a key role in metal contamination. We shall discuss the use of RF-PCD for in-line monitoring and investigation of reaction kinetics. Silicon for low cost, photovoltaic applications confronts problems involving complex defect systems, but comparatively simple processes. The goal is to optimize growth and cell processing. The objective of silicon microphotonics is to establish an IC compatible process technology for integration of optical interconnection with silicon electronics. By building the first silicon-based LED operating at λ = 1.54 μm at room temperature it has been shown that erbium doping is a viable approach. Codoping with F or O largely enhances the light output. We will show a process simulator for the Si:Er:F system as an example for ligand field engineering.
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50

Ju, Tong, Janica Whitaker, Stefan Zukotynski, Nazir Kherani, P. Craig Taylor e Paul Stradins. "Metastable Defects in Tritiated Amorphous Silicon". MRS Proceedings 989 (2007). http://dx.doi.org/10.1557/proc-0989-a02-04.

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AbstractThe appearance of optically or electrically induced defects in hydrogenated amorphous silicon (a-Si:H), especially those that contribute to the Staebler-Wronski effect, has been the topic of numerous studies, yet the mechanism of defect creation and annealing is far from clarified. We have been observing the growth of defects caused by tritium decay in tritiated a Si-H instead of inducing defects optically. Tritium decays to 3He, emitting a beta particle (average energy of 5.7 keV) and an antineutrino. This reaction has a half âlife of 12.5 years. In these 7 at.% tritium-doped a-Si:H samples each beta decay will create a defect by converting a bonded tritium to an interstitial helium, leaving behind a silicon dangling bond. We use ESR (electron spin resonance) and PDS( photothermal deflection spectroscopy) to track the defects. First we annealed these samples, and then we used ESR to determine the initial defect density around 1016 to 1017 /cm3 , which is mostly a surface spin density. After that we have kept the samples in liquid nitrogen for almost two years. During the two years we have used ESR to track the defect densities of the samples. The defect density increases without saturation to a value of 3x1019/cm3 after two years, a number smaller than one would expect if each tritium decay were to create a silicon dangling bond (2x1020/cm3). This result suggests that there might be either an annealing process that remains at liquid nitrogen temperature, or tritium decay in clustered phase not producing a dangling bond due to bond reconstruction and emission of the hydrogen previously paired to Si-bonded tritium atom. After storage in liquid nitrogen for two years, we have annealed the samples. We have stepwise annealed one sample at temperatures up to 200°C, where all of the defects from beta decay are annealed out, and reconstructed the annealing energy distribution. The second sample, which was grown at 150°C, has been isothermally annealing at 300 K for several months. The defects remain well above their saturation value at 300 K, and the shape of decay suggests some interaction between the defects.
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