Bibliografie tematiche / Defects, silicon

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Letteratura scientifica selezionata sul tema "Defects, silicon"

Autore: Grafiati
Pubblicato: 4 giugno 2021
Ultima modifica: 8 febbraio 2022

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Articoli di riviste sul tema "Defects, silicon"

1

Zhang, Dingyou, Sarasvathi Thangaraju, Daniel Smith, Himani Kamineni, Christian Klewer, Mark Scholefield, Ming Lei et al. "A New Type of TSV Defect Caused by BMD in Silicon Substrate". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, DPC (1 gennaio 2014): 001506–22. http://dx.doi.org/10.4071/2014dpc-wp14.

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This paper reports on a new type of through-silicon via (TSV) defect, silicon fin defect, which was found after TSV deep-reactive-ion-etching (DRIE) process for TSV integration with front-end-of-line (FEOL) devices. One possible root cause for this defect is that the bulk micro defect (BMD) in silicon substrate serves as a micro-mask during etching and results in silicon fin defects at TSV bottom. These defects have to be eliminated as they are killer TSV defects for several reasons: (1) could serve as a weak point for isolation liner deposition; (2) could be a weak point for barrier/seed layer deposition; and (3) may cause mechanical failures during TSV backside reveal. Previously, silicon fin defects were removed by switching to a non-BMD silicon substrate for interposer application. However, for TSV integration with FEOL devices, the BMD layer serves as an intrinsic gettering layer for devices, therefore, it cannot be removed from the silicon substrate, which makes it challenging to get rid of silicon fin defects. In order to establish a non-destructive in-line detection method of the fin defects, scanning electron microscope (SEM) automatic process inspection (API) was set up to image the fin defects at the bottom of the trench. A special working point with high depth of focus (DoF) and contrast was created to obtain good top-down SEM imaging of the defects at the bottom of this high-aspect-ratio (HAR) structure. Three types of silicon substrates (A, B, and C) were used for this study to investigate the potential root cause. SEM API results show defect rates of 20%, 3.3% and 0% for substrates A, B, and C, respectively. This is in good agreement with both BMD simulation results and benchmarking data in which substrates A, B, and C had normalized BMD densities of 11.7, 5.74, and 1 cm-3, respectively, with a comparable BMD size of 80~90 nm and a denuded zone (DNZ) depth of 10~15 μm. The correlation between BMD density in a silicon substrate and silicon fin defect rate indicates that BMD is a key root cause for silicon fin defects. To eliminate silicon fin defects, an optimized DRIE process has been developed. On the same type of substrate, the DRIE process with a typical voltage bias results in a defect rate of 6.7%, while no silicon fin defect was detected out of 200 TSVs with a polynomial bias ramp to relatively higher final voltage bias during the last 15 μm etch. The hypothesis is that higher voltage bias is able to sputter away BMD and shows potential to get rid of the silicon fin defects at the TSV bottom. In summary, a capable inspection method, a preferred silicon substrate with BMD spec range, and a promising way for DRIE process optimization to eliminate the silicon fin defect at the TSV bottom have been identified and developed in this work. Detailed results and analysis, particularly the fin defect images, statistical inspection results, BMD benchmarking data, simulation results, and TSV profile with optimized process will be discussed in the paper.
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Ivanova, Ekaterina V., e M. V. Zamoryanskaya. "Investigation of Point Defects Modification in Silicon Dioxide by Cathodoluminescence". Solid State Phenomena 205-206 (ottobre 2013): 457–61. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.457.

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The aim of this work is study of point defects modification in silicon dioxide by a high power density electron beam. In this work we used the method which allows to estimate quantitative content of luminescent point defects by dependence of cathodoluminescence on current density. Content of point defects was evaluated and changing of point defect content in silicon dioxide under electron beam was assessed. It is shown that content of defect connected with silicon deficit decreases whereas content of defect connected with oxygen deficit increases. The model of point defects transformation was suggested on the basis of these results.
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Tersoff, J. "Carbon defects and defect reactions in silicon". Physical Review Letters 64, n. 15 (9 aprile 1990): 1757–60. http://dx.doi.org/10.1103/physrevlett.64.1757.

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Fowler, W. Beall, e Arthur H. Edwards. "Defects and defect processes in silicon dioxide". Radiation Effects and Defects in Solids 146, n. 1-4 (ottobre 1998): 11–25. http://dx.doi.org/10.1080/10420159808220277.

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Hens, Philip, Julian Müller, Günter Wagner, Rickard Liljedahl, Erdmann Spiecker e Mikael Syväjärvi. "Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation". Materials Science Forum 740-742 (gennaio 2013): 283–86. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.283.

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In this paper we present a concept on the defect generation and annihilation during the homoepitaxial growth step of cubic silicon carbide by sublimation epitaxy on templates grown by chemical vapor deposition on silicon substrates. Several structural defects like stacking faults, twins and star defects show opposite evolution from the template layer into the sublimation grown material. While single planar defects tend to annihilate with increasing layer thickness, the defect clusters assigned to the star defects are enlarging. These issues contribute to a balance of how to achieve the best possible quality on thick layers.
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Macdonald, Daniel, Prakash N. K. Deenapanray, Andres Cuevas, S. Diez e Stephan W. Glunz. "The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon". Solid State Phenomena 108-109 (dicembre 2005): 497–502. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.497.

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Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually triggered by illumination. Despite its importance in photovoltaic materials, the chemical make-up of the defect remains unclear. In this paper we examine whether the presence of excess silicon self-interstitials, introduced by ion-implantation, affects the formation of the defects under illumination. The results reveal that there is no discernible change in the carrier-induced defect concentration, although there is evidence for other defects caused by interactions between interstitials and oxygen. The insensitivity of the carrier-induced defect formation to the presence of silicon interstitials suggests that neither interstitials themselves, nor species heavily affected by their presence (such as interstitial boron), are likely to be involved in the defect structure, consistent with recent theoretical modelling.
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Schriefl, Andreas J., Sokratis Sgouridis, Werner Schustereder e Werner Puff. "Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon". Solid State Phenomena 178-179 (agosto 2011): 319–24. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.319.

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The microscopic nature of hydrogen decorated defect complexes created by proton implantation in silicon and subsequental annealing is not well understood yet. We investigated the defects and donator complexes using positron lifetime measurements and Doppler-broadening spectroscopy. In particular, the influence of variations in implantation dose, annealing temperature and annealing time on crystal defects were examined in Czochralski and in float zone silicon samples. Due to well known positron lifetimes in silicon an identification of certain defect complexes was possible.
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Vlaskina, S. I. "Nanostructures in lightly doped silicon carbide crystals with polytypic defects". Semiconductor Physics Quantum Electronics and Optoelectronics 17, n. 2 (30 giugno 2014): 155–59. http://dx.doi.org/10.15407/spqeo17.02.155.

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Gali, Adam, T. Hornos, M. Bockstedte e Thomas Frauenheim. "Point Defects and their Aggregation in Silicon Carbide". Materials Science Forum 556-557 (settembre 2007): 439–44. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.439.

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The existence of point defects is one of the key problems in SiC technology. Combined experimental and theoretical investigations can be successful in identification of point defects. We report the identification of a basic intrinsic defect in p-type SiC. In addition, we predict the existence of interstitial-related electrically active defects which may be detected by experimental tools.
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Gali, Adam. "Excitation Properties of Silicon Vacancy in Silicon Carbide". Materials Science Forum 717-720 (maggio 2012): 255–58. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.255.

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Isolated point defects possessing high spin ground state and below-band-gap excitation may play a key role in realizing solid state quantum bits in semiconductors which are the basic building blocks of quantum computers. Silicon vacancy in silicon carbide provides these features making it a feasible candidate in this special and emerging field of science. However, it has been not clarified what is the exact nature of the luminescence of silicon vacancy detected in hexagonal polytypes. This is the first crucial step needed to understand this basic defect in silicon carbide. We report density functional theory based calculations on silicon vacancy defect. Based on the obtained results we identify the silicon vacancy related photoluminescence signals with the negatively charged defect.
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Tesi sul tema "Defects, silicon"

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Pellegrino, Paolo. "Point Defects in Silicon and Silicon-Carbide". Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3133.

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Cameron, Adrian Ewan. "Evolution of defects in amorphized silicon". [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0014921.

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Gabriel, Margaret A. "Electronic defects in amorphous silicon dioxide /". Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/8553.

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Niewelt, Tim [Verfasser], Eicke [Akademischer Betreuer] Weber e Stefan [Akademischer Betreuer] Glunz. "Lifetime-limiting defects in monocrystalline silicon". Freiburg : Universität, 2017. http://d-nb.info/1178321479/34.

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Adey, James. "Boron related point defects in silicon". Thesis, University of Exeter, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.407270.

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Gower, Joanne Elizabeth. "Photoluminescence of point defects in silicon". Thesis, King's College London (University of London), 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300758.

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Kortegaard, Nielsen Hanne. "Capacitance transient measurements on point defects in silicon and silicol carbide". Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-211.

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Electrically active point defects in semiconductor materials are important because they strongly affect material properties like effective doping concentration and charge carrier lifetimes. This thesis presents results on point defects introduced by ion implantation in silicon and silicon carbide. The defects have mainly been studied by deep level transient spectroscopy (DLTS) which is a quantitative, electrical characterization method highly suitable for point defect studies. The method is based on measurements of capacitance transients and both standard DLTS and new applications of the technique have been used.

In silicon, a fundamental understanding of diffusion phenomena, like room-temperature migration of point defects and transient enhanced diffusion (TED), is still incomplete. This thesis presents new results which brings this understanding a step closer. In the implantation-based experimental method used to measure point defect migration at room temperature, it has been difficult to separate the effects of defect migration and ion channeling. For various reasons, the effect of channeling has so far been disregarded in this type of experiments. Here, a very simple method to assess the amount of channeling is presented, and it is shown that channeling dominates in our experiments. It is therefore recommended that this simple test for channeling is included in all such experiments. This thesis also contains a detailed experimental study on the defect distributions of vacancy and interstitial related damage in ion implanted silicon. Experiments show that interstitial related damage is positioned deeper (0.4 um or more) than vacancy related damage. A physical model to explain this is presented. This study is important to the future modeling of transient enhanced diffusion.

Furthermore, the point defect evolution in low-fluence implanted 4H-SiC is investigated, and a large number of new defect levels has been observed. Many of these levels change or anneal out at temperatures below 300 C, which is not in accordance with the general belief that point defect diffusion in SiC requires high temperatures. This thesis also includes an extensive study on a metastable defect which we have observed for the first time and labeled the M-center. The defect is characterized with respect to DLTS signatures, reconfiguration barriers, kinetics and temperature interval for annealing, carrier capture cross sections, and charge state identification. A detailed configuration diagram for the M-center is presented.

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Åberg, Denny. "Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide". Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3205.

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Rurali, Riccardo. "Theoretical studies of defects in silicon carbide". Doctoral thesis, Universitat Autònoma de Barcelona, 2003. http://hdl.handle.net/10803/3355.

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Cálculos de estructura electrónica han sido utilizados para el estudio de la estructura, de la difusividad y de la actividad eléctrica de defectos puntuales en carburo de silicio. En particular, se han considerado impurezas de tipo n y de tipo p, boro, nitrógeno y fósforo, juntas con defectos intrínsecos, como las vacantes del cristal.
El proceso de transient enhanced diffusion del boro ha sido estudiado y se ha propuesto una descripción microscópica del mismo: el kick-out realizado por un auto-intersticial de silicio cercano ha resultado ser el responsable de la metaestabilidad del de otra forma altamente estable boro sustitucional.
El mecanismo de difusión de la vacante de carbono y de silicio ha sido discutido y caracterizado; se ha demostrado que la vacante de carbono migra solamente a través de un mecanismo de difusión a los segundos vecinos, mientras que la vacante de silicio es metaestable con respecto a la formación del par vacante-antisito y entonces el camino de difusión será mediado por la formación de dicha configuración.
El dopaje de tipo n en las condiciones de alta dosis obtenidas con nitrógeno y/o fósforo ha sido estudiado; se ha mostrado que la formación de complejos de nitrógenos eléctricamente inactivos hace que el fósforo sea la elección mas adecuada para obtener dopaje de tipo n bajo estas condiciones.
Electronic structure calculations have been used to study the structure, the diffusivity and the electrical activity of point defects in silicon carbide. Particularly, p-type and n-type impurities have been considered, namely boron, nitrogen and phosphorus, together with intrinsic defects, specifically vacancies of the host crystal.
The transient enhanced diffusion of boron have been approached and a microscopic picture of this process have been proposed; the kick-out operated by a nearby silicon self-interstitial have turned out to be the responsible of the induced metastability of the otherwise highly stable boron substitutional.
The diffusion mechanism of the carbon and the silicon vacancy have been discussed and characterised; it has been shown that the carbon vacancy can only migrate by means of a second neighbour diffusion mechanisms, while the silicon vacancy is metastable with respect to the formation of a vacancy-antisite pair, and therefore the diffusion path will be mediated by the formation of such configuration.
The n-type high-dose doping regime obtained with nitrogen and / or phosphorus have been studied; it has been demonstrated that the formation of electrically inactive nitrogen aggregate in the high-dose regime makes phosphorus the preferred choice to achieve n-type doping under such conditions.
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Storasta, Liutauras. "Electrically active defects in 4H silicon carbide /". Linköping : Univ, 2003. http://www.bibl.liu.se/liupubl/disp/disp2003/tek801s.pdf.

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Libri sul tema "Defects, silicon"

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Steger, Michael. Transition-Metal Defects in Silicon. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-35079-5.

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Symposium, on Defects in Silicon (2nd 1991 Washington D. C. ). Proceedings of the Second Symposium on Defects in Silicon: Defects in silicon II. Pennington, NJ (10 S. Main St., Pennington 08534-2896): Electrochemical Society, 1991.

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Wen, J. Process-induced defects in semiconductor silicon. Manchester: UMIST, 1996.

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Yoshida, Yutaka, e Guido Langouche, a cura di. Defects and Impurities in Silicon Materials. Tokyo: Springer Japan, 2015. http://dx.doi.org/10.1007/978-4-431-55800-2.

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Graff, Klaus. Metal impurities in silicon device fabrication. Berlin: Springer-Verlag, 1995.

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Symposium A on Defect in Silicon, Hydrogen of the E-MRS Spring Conference (1998 Strasbourg, France). Defects in silicon, hydrogen: Proceedings of Symposium A on Defects in Silicon, Hydrogen of the E-MRS Spring Conference, Strasbourg, France, 16-19 June, 1998. Amsterdam: Elsevier, 1999.

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International Symposium on High Purity Silicon (9th 2006 Cancún, Mexico). High purity silicon 9. A cura di Claeys Cor L, Electrochemical Society. Electronics and Photonics Division. e Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2006.

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International, Symposium on High Purity Silicon (9th 2006 Cancún Mexico). High purity silicon 9. Pennington, NJ: Electrochemical Society, 2006.

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Graff, Klaus. Metal impurities in silicon-device fabrication. Berlin: Springer-Verlag, 1995.

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Pichler, Peter. Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0597-9.

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Capitoli di libri sul tema "Defects, silicon"

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Zulehner, W. "Defects in CZ Silicon". In Semiconductor Silicon, 127–52. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_10.

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Krimmel, E. F. "Defects, Diffusion, Ion Implantation, Recrystallization, and Dielectrics". In Silicon, 207–30. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09897-4_11.

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Schlüter, M. A. "Theory of Defects in Crystalline Silicon". In Semiconductor Silicon, 112–26. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_9.

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Bechstedt, F., J. Furthmüller, U. Grossner e C. Raffy. "Zero- and Two-Dimensional Native Defects". In Silicon Carbide, 3–25. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_1.

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Kawasuso, A., M. Weidner, F. Redmann, T. Frank, P. Sperr, G. Kögel, M. Yoshikawa et al. "Vacancy Defects Detected by Positron Annihilation". In Silicon Carbide, 563–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_23.

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Ammon, Wilfried. "Defects in Monocrystalline Silicon". In Springer Handbook of Electronic and Photonic Materials, 101–20. Boston, MA: Springer US, 2006. http://dx.doi.org/10.1007/978-0-387-29185-7_5.

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von Ammon, Wilfried, Andreas Sattler e Gudrun Kissinger. "Defects in Monocrystalline Silicon". In Springer Handbook of Electronic and Photonic Materials, 1. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_5.

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Inoue, N., K. Wada e J. Osaka. "Oxygen in Silicon". In Defects and Properties of Semiconductors, 197–218. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-4766-5_13.

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Cerofolini, Gianfranco, e Laura Meda. "Equilibrium Defects". In Physical Chemistry of, in and on Silicon, 15–24. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-73504-2_3.

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Son, N. T., Mt Wagner, C. G. Hemmingsson, L. Storasta, B. Magnusson, W. M. Chen, S. Greulich-Weber, J. M. Spaeth e E. Janzén. "Electronic Structure of Deep Defects in SiC". In Silicon Carbide, 461–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_19.

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Atti di convegni sul tema "Defects, silicon"

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McMahon, T. J. "Defect equilibration in device quality a-Si:H and its relation to light-induced defects". In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41018.

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Fano, Vanesa, Alona Otaegi, Nekane Azkona, Eneko Cereceda, Lourdes Pérez, Pedro Rodríguez, Federico Recart, José Rubén Gutiérrez e Juan Carlos Jimeno. "Defects detection in p-n junction isolation by electroluminescence". In SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS. Author(s), 2018. http://dx.doi.org/10.1063/1.5049245.

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Smyntyna, V., O. Kulinich, M. Glauberman, G. Chemeresuk, I. Yatsunskiy e O. Sviridova. "Influence of Initial Silicon Defects on Processes of the Dioxide Silicon Defect Formation". In 2006 16th International Crimean Microwave and Telecommunication Technology. IEEE, 2006. http://dx.doi.org/10.1109/crmico.2006.256126.

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Jellett, W., C. Zhang, H. Jin, P. J. Smith e K. J. Weber. "Boron emitters: Defects at the silicon - silicon dioxide interface". In 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). IEEE, 2008. http://dx.doi.org/10.1109/pvsc.2008.4922847.

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LaVan, David A., B. L. Boyce e T. E. Buchheit. "Size and Frequency of Defects in Silicon MEMS". In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-32393.

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Mechanical testing of thin films for MEMS has progressed from a developmental stage to a point where validated techniques are used to study the behavior of devices and materials at a very fine scale. Tensile data covering a range of sizes and test techniques have been analyzed to examine the distribution of defects that would be responsible for the observed fracture strengths. For each sample, a critical defect size was calculated based on a published fracture toughness and a half-circular surface crack fracture toughness model. For polysilicon produced using the SUMMiT V process in the period 1998–1999, the calculated mean defect size was 115 nm. For polysilicon produced using the MUMPS process, the calculated mean defect size was 389 nm.
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Santos, P. V., W. B. Jackson e R. A. Street. "Saturation of light-induced defects in a-Si:H". In Amorphous silicon materials and solar cells. AIP, 1991. http://dx.doi.org/10.1063/1.41014.

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Schubert, Martin C., Holger Habenicht e Wilhelm Warta. "Imaging of metastable defects in silicon". In 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6185868.

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Fortmann, C. M., e J. C. Tu. "Defects in amorphous silicon germanium alloys". In Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105675.

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Lu, A. J. "Point defects in the silicon nanowire". In Eighth International Conference on Thin Film Physics and Applications (TFPA13), a cura di Junhao Chu e Chunrui Wang. SPIE, 2013. http://dx.doi.org/10.1117/12.2052883.

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Shirai, Koun, Ikutaro Hamada e Hiroshi Katayama-Yoshida. "Dynamics of hydrogen in silicon". In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865607.

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Rapporti di organizzazioni sul tema "Defects, silicon"

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McHugo, S. A., A. C. Thompson e H. Hieslmair. Interactions of structural defects with metallic impurities in multicrystalline silicon. Office of Scientific and Technical Information (OSTI), aprile 1997. http://dx.doi.org/10.2172/603693.

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McHugo, S. A., e M. Imaizumi. Release of impurities from structural defects in polycrystalline silicon solar cells. Office of Scientific and Technical Information (OSTI), aprile 1997. http://dx.doi.org/10.2172/515591.

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Patel, Jamshed R. Diffuse X-ray Streaks from Defects and Surface Features in Boron Implanted Silicon. Office of Scientific and Technical Information (OSTI), agosto 1999. http://dx.doi.org/10.2172/10516.

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Sopori, Bhushan L. Second Workshop: Role of Point Defects/Defect Complexes in Silicon Device Fabrication; Abstracts of Workshop Held 24-26 August 1992, Breckenridge, Colorado. Office of Scientific and Technical Information (OSTI), gennaio 1992. http://dx.doi.org/10.2172/6909897.

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Sopori, B. L., e T. Y. Tan. Role of Point Defects and Defect Complexes in Silicon Device Processing: Summary Report and Papers of the Second Workshop, 24-26 August 1992, Breckenridge, Colorado. Office of Scientific and Technical Information (OSTI), agosto 1994. http://dx.doi.org/10.2172/10179240.

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Estreicher, S. K. Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Report, 10 February 2000--10 March 2003. Office of Scientific and Technical Information (OSTI), settembre 2003. http://dx.doi.org/10.2172/15004721.

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Ashok, S. Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Report, 2 May 2000-2 July 2003. Office of Scientific and Technical Information (OSTI), dicembre 2004. http://dx.doi.org/10.2172/15011711.

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Schiff, E. A., H. Antoniadis, J. K. Lee e Q. Wang. Research on defects and transport in amorphous silicon-based semiconductors. Annual subcontract report, 20 February 1991--19 February 1992. Office of Scientific and Technical Information (OSTI), aprile 1992. http://dx.doi.org/10.2172/10137883.

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Ashok, S. Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Subcontract Report, 2 May 2000--2 July 2003. Office of Scientific and Technical Information (OSTI), maggio 2004. http://dx.doi.org/10.2172/15007607.

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Schiff, E. A., H. Antoniadis, J. K. Lee e Q. Wang. Research on Defects and Transport in Amorphous Silicon-Based Semiconductors, Annual Subcontract Report, 20 February 1991 - 19 February 1992. Office of Scientific and Technical Information (OSTI), aprile 1992. http://dx.doi.org/10.2172/5663038.

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