Articoli di riviste sul tema "Couloir de mobilité"
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Bovey, Laurent. "De la classe spéciale à la classe régulière". Revue suisse de pédagogie spécialisée 14, n. 01 (7 marzo 2024): 13–19. http://dx.doi.org/10.57161/r2024-01-03.
Nagy, Raluca. "Tourisme et migration dans le Maramureş". Ethnologies 31, n. 1 (9 novembre 2009): 111–26. http://dx.doi.org/10.7202/038502ar.
Potbhare, Siddharth, Gary Pennington, Neil Goldsman, Aivars J. Lelis, Daniel B. Habersat, F. Barry McLean e J. M. McGarrity. "Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation". Materials Science Forum 527-529 (ottobre 2006): 1321–24. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1321.
Pérez-Tomás, Amador, Michael R. Jennings, Philip A. Mawby, James A. Covington, Phillippe Godignon, José Millan e Narcis Mestres. "SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps". Materials Science Forum 556-557 (settembre 2007): 835–38. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.835.
Ji, Qizheng, Jun Liu, Ming Yang, Xiaofeng Hu, Guangfu Wang, Menglin Qiu e Shanghe Liu. "Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs". Electronics 12, n. 6 (20 marzo 2023): 1473. http://dx.doi.org/10.3390/electronics12061473.
Pérez-Tomás, Amador, Miquel Vellvehi, Narcis Mestres, José Millan, P. Vennegues e J. Stoemenos. "Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion". Materials Science Forum 527-529 (ottobre 2006): 1059–62. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1059.
Chen, W. P. N., Pin Su e K. I. Goto. "Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs". IEEE Transactions on Nanotechnology 7, n. 5 (settembre 2008): 538–43. http://dx.doi.org/10.1109/tnano.2008.2004771.
Driussi, Francesco, e David Esseni. "Simulation Study of Coulomb Mobility in Strained Silicon". IEEE Transactions on Electron Devices 56, n. 9 (settembre 2009): 2052–59. http://dx.doi.org/10.1109/ted.2009.2026394.
Walczak, Jakub, e Bogdan Majkusiak. "Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers". Journal of Telecommunications and Information Technology, n. 1 (30 marzo 2004): 39–49. http://dx.doi.org/10.26636/jtit.2004.1.230.
Ihlenborg, Marvin, Ann-Kathrin Schuster, Jürgen Grotemeyer e Frank Gunzer. "Measuring the effects of Coulomb repulsion via signal decay in an atmospheric pressure laser ionization ion mobility spectrometer". European Journal of Mass Spectrometry 24, n. 4 (2 marzo 2018): 330–36. http://dx.doi.org/10.1177/1469066718761585.
Sanquer, M., M. Specht, L. Ghenim, S. Deleonibus e G. Guegan. "Coulomb blockade in low-mobility nanometer size Si MOSFET’s". Physical Review B 61, n. 11 (15 marzo 2000): 7249–52. http://dx.doi.org/10.1103/physrevb.61.7249.
Vincens, Marion, Marie-Hélène Vandersmissen e Marius Thériault. "Impacts de la restructuration du réseau d’autobus de la ville de Québec sur l’accessibilité aux emplois des femmes et sur leur mobilité professionnelle". Cahiers de géographie du Québec 51, n. 144 (19 febbraio 2008): 419–46. http://dx.doi.org/10.7202/017628ar.
Cui, Peng, e Yuping Zeng. "Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation". Nanomaterials 12, n. 10 (18 maggio 2022): 1718. http://dx.doi.org/10.3390/nano12101718.
Matocha, Kevin, e Vinayak Tilak. "Understanding the Inversion-Layer Properties of the 4H-SiC/SiO2 Interface". Materials Science Forum 679-680 (marzo 2011): 318–25. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.318.
Mortet, V., E. Bedel-Pereira, J. F. Bobo, F. Cristiano, Christian Strenger, V. Uhnevionak, A. Burenkov e A. J. Bauer. "Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation". Materials Science Forum 740-742 (gennaio 2013): 525–28. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.525.
Rao, R. Ramakrishna, Kevin Matocha e Vinayak Tilak. "Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs". Materials Science Forum 615-617 (marzo 2009): 797–800. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.797.
Liu, Dongyang, Jiawei Wang, Chong Bi, Mengmeng Li, Nianduan Lu, Zhekai Chen e Ling Li. "Lattice Relaxation Forward Negative Coulomb Drag in Hopping Regime". Electronics 11, n. 8 (17 aprile 2022): 1273. http://dx.doi.org/10.3390/electronics11081273.
Strenger, Christian, Viktoryia Uhnevionak, Vincent Mortet, Guillermo Ortiz, Tobias Erlbacher, Alexander Burenkov, A. J. Bauer et al. "Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs". Materials Science Forum 778-780 (febbraio 2014): 583–86. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.583.
Liu, Yan, Zhao-Jun Lin, Ming Yang, Chong-Biao Luan, Yu-Tang Wang, Yuan-Jie Lv e Zhi-Hong Feng. "Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors". Modern Physics Letters B 30, n. 35 (20 dicembre 2016): 1650411. http://dx.doi.org/10.1142/s021798491650411x.
Kutsuki, Katsuhiro, Sachiko Kawaji, Yukihiko Watanabe, Shinichiro Miyahara e Jun Saito. "Improved Evaluation Method for Channel Mobility in SiC Trench MOSFETs". Materials Science Forum 821-823 (giugno 2015): 757–60. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.757.
Rudenko, Tamara, R. Yu, S. Barraud, K. Cherkaoui, P. Razavi, G. Fagas e A. N. Nazarov. "On the Mobility Behavior in Highly Doped Junctionless Nanowire SOI MOSFETs". Advanced Materials Research 854 (novembre 2013): 35–43. http://dx.doi.org/10.4028/www.scientific.net/amr.854.35.
Yang, Yu, Franz A. Koeck, Xingye Wang e Robert J. Nemanich. "Surface transfer doping of MoO3 on hydrogen terminated diamond with an Al2O3 interfacial layer". Applied Physics Letters 120, n. 19 (9 maggio 2022): 191602. http://dx.doi.org/10.1063/5.0083971.
Yang, Yongxiong, Yuanjie Lv, Zhaojun Lin, Guangyuan Jiang e Yang Liu. "Application of Polarization Coulomb Field Scattering to a Physics-Based Compact Model for AlGaN/GaN HFETs with I–V Characteristics". Electronics 9, n. 10 (19 ottobre 2020): 1719. http://dx.doi.org/10.3390/electronics9101719.
Chen, Siheng, Peng Cui, Mingsheng Xu, Zhaojun Lin, Xiangang Xu, Yuping Zeng e Jisheng Han. "Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment". Crystals 12, n. 11 (26 ottobre 2022): 1521. http://dx.doi.org/10.3390/cryst12111521.
Hatakeyama, Tetsuo, Hirohisa Hirai, Mitsuru Sometani, Dai Okamoto, Mitsuo Okamoto e Shinsuke Harada. "Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs". Journal of Applied Physics 131, n. 14 (14 aprile 2022): 145701. http://dx.doi.org/10.1063/5.0086172.
Zhao, Yi, Mitsuru Takenaka e Shinichi Takagi. "Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially Strained-Si pMOSFETs". IEEE Transactions on Electron Devices 56, n. 5 (maggio 2009): 1152–56. http://dx.doi.org/10.1109/ted.2009.2015170.
Harrysson Rodrigues, Isabel, Andrey Generalov, Miika Soikkeli, Anton Murros, Sanna Arpiainen e Andrei Vorobiev. "Geometrical magnetoresistance effect and mobility in graphene field-effect transistors". Applied Physics Letters 121, n. 1 (4 luglio 2022): 013502. http://dx.doi.org/10.1063/5.0088564.
CHEN, YONG-CONG. "A DILUTE NEUTRAL-CLUSTER APPROXIMATION FOR THE QUANTUM WASHBOARD POTENTIAL". International Journal of Modern Physics B 07, n. 22 (10 ottobre 1993): 3907–26. http://dx.doi.org/10.1142/s021797929300353x.
Lee, K., Benedetto Buono, Martin Domeij e Jimmy Franchi. "TCAD Modeling of a 1200 V SiC MOSFET". Materials Science Forum 924 (giugno 2018): 689–92. http://dx.doi.org/10.4028/www.scientific.net/msf.924.689.
OKTYABRSKY, S., P. NAGAIAH, V. TOKRANOV, M. YAKIMOV, R. KAMBHAMPATI, S. KOVESHNIKOV, D. VEKSLER, N. GOEL e G. BERSUKER. "ELECTRON SCATTERING IN BURIED InGaAs/HIGH-K MOS CHANNELS". International Journal of High Speed Electronics and Systems 20, n. 01 (marzo 2011): 95–103. http://dx.doi.org/10.1142/s012915641100643x.
GOLD, A., e O. ANTONIE. "MAGNETORESISTANCE OF A SILICON MOSFET ON THE (111) SURFACE IN A PARALLEL MAGNETIC FIELD". International Journal of Modern Physics B 21, n. 08n09 (10 aprile 2007): 1529–34. http://dx.doi.org/10.1142/s0217979207043142.
Давыдов, С. Ю., e А. А. Лебедев. "Влияние адсорбированной макромолекулы на подвижность носителей в однослойном графене: модель оборванных связей". Физика и техника полупроводников 57, n. 5 (2023): 392. http://dx.doi.org/10.21883/ftp.2023.05.56210.4958.
Han, Kai, Xiaolei Wang, Jinjuan Xiang, Lixing Zhou, Jiazhen Zhang, Yanrong Wang, Xueli Ma et al. "Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs". Semiconductor Science and Technology 34, n. 7 (12 giugno 2019): 075009. http://dx.doi.org/10.1088/1361-6641/ab2167.
Curran, Anya, Farzan Gity, Agnieszka Gocalinska, Enrica Mura, Roger E. Nagle, Michael Schmidt, Brendan Sheehan, Emanuele Pelucchi, Colm O’Dwyer e Paul K. Hurley. "High Hole Mobility Polycrystalline GaSb Thin Films". Crystals 11, n. 11 (5 novembre 2021): 1348. http://dx.doi.org/10.3390/cryst11111348.
Tsujimura, Masatoshi, Hidenori Kitai, Hiromu Shiomi, Kazutoshi Kojima, Kenji Fukuda, Kunihiro Sakamoto, Kimiyoshi Yamasaki, Shin-Ichi Takagi e Hajime Okumura. "Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement". Materials Science Forum 858 (maggio 2016): 441–44. http://dx.doi.org/10.4028/www.scientific.net/msf.858.441.
Zhou, Lixing, Jinjuan Xiang, Xiaolei Wang e Wenwu Wang. "Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO x /Al2O3 gate stack by ozone oxidation". Journal of Semiconductors 43, n. 1 (1 gennaio 2022): 013101. http://dx.doi.org/10.1088/1674-4926/43/1/013101.
Kittler, Martin, Manfred Reiche e Hans Michael Krause. "Charge Carrier Transport along Grain Boundaries in Silicon". Solid State Phenomena 205-206 (ottobre 2013): 293–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.293.
Поклонский, Н. А., С. А. Вырко e А. Н. Деревяго. "Квазиклассическая модель статической электропроводности сильно легированных вырожденных полупроводников при низких температурах". Физика и техника полупроводников 52, n. 6 (2018): 544. http://dx.doi.org/10.21883/ftp.2018.06.45913.8651.
Tilak, Vinayak, Kevin Matocha, Greg Dunne, Fredrik Allerstam e Einar Ö. Sveinbjörnsson. "Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique". Materials Science Forum 600-603 (settembre 2008): 687–90. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.687.
Протасов, Д. Ю., А. К. Бакаров, А. И. Торопов, Б. Я. Бер, Д. Ю. Казанцев e К. С. Журавлев. "Подвижность двумерного электронного газа в DA-pHEMT гетроструктурах с различной шириной профиля delta-n-слоев". Физика и техника полупроводников 52, n. 1 (2018): 48. http://dx.doi.org/10.21883/ftp.2018.01.45318.8610.
Mamatrishat, M., M. Kouda, T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, Y. Kataoka et al. "The effect of remote Coulomb scattering on electron mobility in La2O3gate stacked MOSFETs". Semiconductor Science and Technology 27, n. 4 (14 marzo 2012): 045014. http://dx.doi.org/10.1088/0268-1242/27/4/045014.
Esseni, D., e A. Abramo. "Modeling of electron mobility degradation by remote coulomb scattering in ultrathin oxide MOSFETs". IEEE Transactions on Electron Devices 50, n. 7 (luglio 2003): 1665–74. http://dx.doi.org/10.1109/ted.2003.814973.
Arokianathan, C. R., J. H. Davies e A. Asenov. "Ab-initio Coulomb Scattering in Atomistic Device Simulation". VLSI Design 8, n. 1-4 (1 gennaio 1998): 331–35. http://dx.doi.org/10.1155/1998/76027.
Ohata, Akiko, Romain Ritzenthaler, Olivier Faynot e Sorin Cristoloveanu. "Special size effects in advanced single-gate and multiple-gate SOI transistors". Journal of Telecommunications and Information Technology, n. 2 (25 giugno 2023): 14–24. http://dx.doi.org/10.26636/jtit.2007.2.804.
Zhou, Heng, Yuanjie Lv, Mingyan Wang, Peng Cui e Zhaojun Lin. "Study of electrical transport properties of GaN-based side-gate heterostructure transistors". Applied Physics Letters 121, n. 21 (21 novembre 2022): 212107. http://dx.doi.org/10.1063/5.0124626.
Cretu, Bogdan, Abderrahim Tahiat, Anabela Veloso e Eddy Simoen. "(Invited) In-Depth DC and Low Frequency Noise Characterization of Nanosheet FETs at Room and Cryogenic Temperatures". ECS Transactions 111, n. 1 (19 maggio 2023): 197–208. http://dx.doi.org/10.1149/11101.0197ecst.
Rozen, John, Xing Guang Zhu, Ayayi Claude Ahyi, John R. Williams e Leonard C. Feldman. "The Limits of Post Oxidation Annealing in NO". Materials Science Forum 645-648 (aprile 2010): 693–96. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.693.
Bonnefoy, Baptiste. "À l’origine des milices de couleur : mobilité sociale et ségrégation dans les villes de l’empire espagnol". Genèses 123, n. 2 (12 maggio 2021): 90–114. http://dx.doi.org/10.3917/gen.123.0090.
Mamatrishat, Mamat, Miyuki Kouda, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Kenji Natori, Takeo Hattori e Hiroshi Iwai. "Analysis of Remote Coulomb Scattering Limited Mobility in MOSFET with CeO2/La2O3 Gate Stacks". ECS Transactions 25, n. 7 (17 dicembre 2019): 253–57. http://dx.doi.org/10.1149/1.3203963.
Chen, William P. N., Pin Su e K. Goto. "Impact of Process-Induced Strain on Coulomb Scattering Mobility in Short-Channel n-MOSFETs". IEEE Electron Device Letters 29, n. 7 (luglio 2008): 768–70. http://dx.doi.org/10.1109/led.2008.2000909.