Articoli di riviste: "Contact resistance"

1

Cumberbatch, E., e G. Mahinthakumar. "Contact resistance for small contacts (MOSFET)". IEEE Transactions on Electron Devices 38, n. 12 (1991): 2669–72. http://dx.doi.org/10.1109/16.158689.

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Krutova, Y. A. "Contact resistance of rectangular contact". Челябинский физико-математический журнал 6, n. 2 (2021): 162–71. http://dx.doi.org/10.47475/2500-0101-2021-16203.

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3

Ye, Gangfeng, Kelvin Shi, Robert Burke, Joan M. Redwing e Suzanne E. Mohney. "Ti/Al Ohmic Contacts to n-Type GaN Nanowires". Journal of Nanomaterials 2011 (2011): 1–6. http://dx.doi.org/10.1155/2011/876287.

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Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid10−8 Ωcm2) upon annealing at 600 °Cfor 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C) to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

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Ren, Wanbin, Yu Chen, Zhaobin Wang, Shengjun Xue e Xu Zhang. "Electrical Contact Resistance of Coated Spherical Contacts". IEEE Transactions on Electron Devices 63, n. 11 (novembre 2016): 4373–79. http://dx.doi.org/10.1109/ted.2016.2612545.

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5

Norberg, G., S. Dejanovic e H. Hesselbom. "Contact resistance of thin metal film contacts". IEEE Transactions on Components and Packaging Technologies 29, n. 2 (giugno 2006): 371–78. http://dx.doi.org/10.1109/tcapt.2006.875891.

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Crofton, John, John R. Williams, A. V. Adedeji, James D. Scofield, S. Dhar, Leonard C. Feldman e M. J. Bozack. "Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC". Materials Science Forum 527-529 (ottobre 2006): 895–98. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.895.

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Nickel ohmic contacts to p-type epitaxial and heavily implanted 4H-SiC are described. Room and elevated temperature results are presented. Elevated temperature measurements of specific contact resistance are compared to theoretical calculations. The calculations require the acceptor doping concentration and the contact’s barrier height. Epitaxial material has a known acceptor value thereby allowing the barrier height to be deduced by requiring agreement between the calculated and measured values of the contact resistance. Calculations of the contact resistance for implanted material use the barrier height from the epitaxial results along with a variable activated acceptor doping concentration which is adjusted to give agreement with measured room temperature specific contact resistances. Specific contact resistances as low as 7x10-6 ohm-cm2 fabricated on the Si face have been obtained to epitaxial 4H p-type material whereas contacts to implanted material result in much larger contact resistance values of 4x10-5 ohm-cm2. These results, when compared to theoretical calculations, indicate that activated acceptor doping concentrations in heavily implanted material are on the order of 2% of the implant concentration.

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Hemant Kagra, Hemant Kagra. "Impact of Surface Film on Electrical Contact Resistance of Silver Impregnated Graphite Contacts". Indian Journal of Applied Research 3, n. 5 (1 ottobre 2011): 234–37. http://dx.doi.org/10.15373/2249555x/may2013/71.

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Gracheva, E. I., A. N. Gorlov, A. N. Alimova e P. P. Mukhanova. "Resistance change of contact groups of low-voltage electrical apparatus: Determining the laws". Vestnik MGTU 24, n. 4 (30 dicembre 2021): 350–60. http://dx.doi.org/10.21443/1560-9278-2021-24-4-350-360.

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The main Russian and foreign manufacturers of low-voltage electrical devices - circuit breakers, fuses, magnetic starters, knife switches and packet switches are presented. The data of experiments for determining the resistance values of contact groups of low-voltage switching equipment are considered. The design features of the devices that determine the value of the resistances of the power circuits of low-voltage equipment are investigated and a classification is proposed depending on the design elements of the devices. A methodological approach and an algorithm for experiments and detailed analysis of the contact groups of devices are given. Experimental schemes for the study of contact groups are proposed. The data of the conducted experiments on the study of contact groups and the resistance values as a function of the flowing currents are shown. During the experiments it is revealed that the value of the resistance of the contacts changes depending on the value, type and time of exposure to current within +/-5 %. The laws that characterize the ratio of the resistance values of the structural components of devices (contact systems, thermal relay, coil of the maximum relay) have been revealed and defined. Empirical expressions and graphical dependences of the resistances of contacts and contact systems are obtained as a function of the magnitude of the rated currents of low-voltage contact equipment. The minimum sample size of the number of devices during experimental research is determined, sufficient to calculate the mathematical expectation of the resistances of the contact connections of the devices with a given accuracy. As a result of experimental studies, it is revealed that the resistance value of contacts and contact joints can increase during operation by 2-2.5 times. The established dependences of the change in contact resistance can be used to predict the technical state of electrical installations of intrashop low-voltage networks, to clarify the amount of electricity losses in shop networks up to 1 kV, and can also be used as an additional regulation for maintenance and scheduled preventive maintenance.

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9

Spiesser, A., R. Jansen, H. Saito e S. Yuasa. "Optimum contact resistance for two-terminal magnetoresistance in a lateral spin valve". Applied Physics Letters 122, n. 6 (6 febbraio 2023): 062407. http://dx.doi.org/10.1063/5.0137482.

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The two-terminal magnetoresistance (2T-MR) due to spin accumulation in a lateral spin valve is determined for devices with a Si channel and Fe/MgO tunnel contacts of varying MgO thickness. Established theory predicts that the 2T-MR exhibits a pronounced maximum for contact resistances comparable to the spin resistance rs of the channel. At large contact resistance ([Formula: see text]), the 2T-MR is, indeed, very small, despite the large tunnel spin polarization (TSP) of the contacts (90%). When the contact resistance is reduced toward rs, the 2T-MR increases, but much less than expected because for thinner MgO the TSP decays. For devices with the thinnest MgO and contact resistances near the predicted optimum, the 2T-MR is actually lower, owing to the smaller TSP (14%). The optimum and scaling of the 2T-MR are, thus, profoundly affected by the variation of the TSP with contact resistance. This is relevant for the design of practical two-terminal devices, including those with channel materials other than Si.

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10

LOSKUTOV, S. V., M. O. SCHETININA e O. A. ZELENINA. "CONTACT RESISTANCE MODELING". Electrical Engineering and Power Engineering, n. 1 (31 maggio 2018): 22–29. http://dx.doi.org/10.15588/1607-6761-2018-1-3.

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11

Muzychka, Y. S., M. R. Sridhar, M. M. Yovanovich e V. W. Antonetti. "Thermal Spreading Resistance in Multilayered Contacts: Applications in Thermal Contact Resistance". Journal of Thermophysics and Heat Transfer 13, n. 4 (ottobre 1999): 489–94. http://dx.doi.org/10.2514/2.6466.

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12

Aichi, Hisashi, Hanji Satone e Iwao Miyachi. "Contact resistance of neighboring multiple contact." IEEJ Transactions on Power and Energy 105, n. 10 (1985): 821–28. http://dx.doi.org/10.1541/ieejpes1972.105.821.

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13

Ershov, A. A. "Contact Resistance of a Square Contact". Proceedings of the Steklov Institute of Mathematics 303, S1 (dicembre 2018): 70–78. http://dx.doi.org/10.1134/s0081543818090079.

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14

Ando, Yasuhiro, e Yasutaka Imori. "Contact resistance properties on plastic deformation connector contacts". Electronics and Communications in Japan (Part II: Electronics) 80, n. 3 (marzo 1997): 47–59. http://dx.doi.org/10.1002/(sici)1520-6432(199703)80:3<47::aid-ecjb6>3.0.co;2-4.

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15

Hertel, Stefan, Andreas Finkler, Michael Krieger e Heiko B. Weber. "Graphene Ohmic Contacts to n-Type Silicon Carbide (0001)". Materials Science Forum 821-823 (giugno 2015): 933–36. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.933.

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Epitaxial graphene on silicon carbide (SiC) can easily be grown by thermal decomposition. A well-defined epitaxial interface between graphene and substrate is formed, especially when the silicon face of hexagonal polytypes is employed. It is found that as-grown monolayer graphene with interfacial buffer layer provides perfectly ohmic contacts to n-type SiC – even to low-doped epitaxial layers without contact implantation. Contact resistances to highly doped samples are competitive with conventional annealed nickel (Ni) contacts; a direct comparison of Ni and graphene contacts on 4H-SiC resulted in an one order of magnitude reduction of the contact resistance in the case of graphene contacts. On highly doped 6H-SiC, a specific contact resistance as low asρC= 5.9·10-6Ωcm2was found. This further improvement compared to 4H-SiC is assigned to better matching of work functions at the Schottky-like interface.

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16

Wang, S. C., e P. S. Wei. "Modeling Dynamic Electrical Resistance During Resistance Spot Welding". Journal of Heat Transfer 123, n. 3 (28 novembre 2000): 576–85. http://dx.doi.org/10.1115/1.1370502.

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Dynamic electrical resistance during resistance spot welding has been quantitatively modeled and analyzed in this work. A determination of dynamic resistance is necessary for predicting the transport processes and monitoring the weld quality during resistance spot welding. In this study, dynamic resistance is obtained by taking the sum of temperature-dependent bulk resistance of the workpieces and contact resistances at the faying surface and electrode-workpiece interface within an effective area corresponding to the electrode tip where welding current primarily flows. A contact resistance is composed of constriction and film resistances, which are functions of hardness, temperature, electrode force, and surface conditions. The temperature is determined from the previous study in predicting unsteady, axisymmetric mass, momentum, heat, species transport, and magnetic field intensity with a mushy-zone phase change in workpieces, and temperature and magnetic fields in the electrodes of different geometries. The predicted nugget thickness and dynamic resistance versus time show quite good agreement with available experimental data. Excluding expulsion, the dynamic resistance curve can be divided into four stages. A rapid decrease of dynamic resistance in stage 1 is attributed to decreases in contact resistances at the faying surface and electrode-workpiece interface. In stage 2, the increase in dynamic resistance results from the primary increase of bulk resistance in the workpieces and an increase of the sum of contact resistances at the faying surface and electrode-workpiece interface. Dynamic resistance in stage 3 decreases, because increasing rate of bulk resistance in the workpieces and contact resistances decrease. In stage 4 the decrease of dynamic resistance is mainly due to the formation of the molten nugget at the faying surface. The molten nugget is found to occur in stage 4 rather than stage 2 or 3 as qualitatively proposed in the literature. The effects of different parameters on the dynamic resistance curve are also presented.

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17

Bahrami, M., J. R. Culham e M. M. Yovanovich. "Modeling Thermal Contact Resistance: A Scale Analysis Approach". Journal of Heat Transfer 126, n. 6 (1 dicembre 2004): 896–905. http://dx.doi.org/10.1115/1.1795238.

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A compact analytical model is developed for predicting thermal contact resistance (TCR) of nonconforming rough contacts of bare solids in a vacuum. Instead of using probability relationships to model the size and number of microcontacts of Gaussian surfaces, a novel approach is taken by employing the “scale analysis method.” It is demonstrated that the geometry of heat sources on a half-space for microcontacts is justifiable for an applicable range of contact pressure. It is shown that the surface curvature and contact pressure distribution have no effect on the effective microthermal resistance. The present model allows TCR to be predicted over the entire range of nonconforming rough contacts from conforming rough to smooth Hertzian contacts. A new nondimensional parameter, i.e., ratio of the macro- over microthermal resistances, is introduced as a criterion to identify three regions of TCR. The present model is compared to collected TCR data for SS304 and showed excellent agreement. Additionally, more than 880 experimental data points, collected by many researchers, are summarized and compared to the present model, and relatively good agreement is observed. The data cover a wide range of materials, mechanical and thermophysical properties, micro- and macrocontact geometries, and similar and dissimilar metal contacts.

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18

Shtern M. Yu., Karavaev I. S., Rogachev M. S., Shtern Yu. I., Mustafoev B. R., Korchagin E. P. e Kozlov A. O. "Methods for investigation of electrical contact resistance in a metal film--semiconductor structure". Semiconductors 56, n. 1 (2022): 24. http://dx.doi.org/10.21883/sc.2022.01.53115.24.

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The electrical contact resistance significantly affects the efficiency of thermoelements. In the case of high doped thermoelectric materials, the tunneling mechanism of conductivity prevails at metal-semiconductor interface, which makes it possible to obtain a contact resistance of less than 10-8 Ohm·m2. Low resistance values significantly complicate its experimental determination. Work present three techniques and a measuring stand for the investigation of contact resistance. The techniques are based on the measurement of the total electrical resistance, which consists of transient contact resistance and the resistance of the thermoelectric material with its subsequent exclusion. The developed techniques differ in the arrangement of the investigated contacts on the samples, in the methods of measurement and processing of the obtained results, and make it possible to determine the specific contact resistance of the order of 10-10 Ohm·m2. Keywords: thermoelements, film contacts, contact resistance, measurement techniques.

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19

Mo, Yun, e Sumie Segawa. "THERMAL CONTACT RESISTANCE MEASUREMENTS". Journal of Enhanced Heat Transfer 19, n. 6 (2012): 561–69. http://dx.doi.org/10.1615/jenhheattransf.2012006005.

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20

Greenwood, J. A. "Transient thermal contact resistance". International Journal of Heat and Mass Transfer 34, n. 9 (settembre 1991): 2287–90. http://dx.doi.org/10.1016/0017-9310(91)90054-i.

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21

Lee, Jaehyeok, Hyeongmin Cho, Bongju Kim, Myoungho Jeong, Kiyoung Lee e Kookrin Char. "Low resistance epitaxial edge contacts to buried nanometer thick conductive layers of BaSnO₃". Applied Physics Letters 121, n. 14 (3 ottobre 2022): 142102. http://dx.doi.org/10.1063/5.0116527.

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As the size of the semiconductor device decreases, the importance of the low resistance contacts to devices cannot be overstated. Here, we studied the contact resistance to buried nanometer thick δ-doped Ba1-xLaxSnO3 (BLSO) layers. We have used epitaxial 4% (x = 0.04) BLSO as a contact material, which has additional advantages of forming Ohmic contacts to BaSnO3 and providing thermal stability even at high temperatures. The contact resistance was measured by a modified transmission line method designed to eliminate the contribution from the resistance of the contact material. The upper bound for the contact resistance to a 12 nm thick δ-doped 1% BLSO conductive layer was measured to be 1.25 × 10−1or 2.87 × 10−7 Ω cm2. Our results show that it is possible to provide low resistance epitaxial edge contacts to an embedded nanometer-thick BLSO conductive layer using an ion-milling process. Our low resistance contact method can be easily extended to a two-dimensional electron gas at the oxide interfaces such as LaInO3/BaSnO3.

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Chen, J. J., Soohwan Jang, T. J. Anderson, F. Ren, Yuanjie Li, Hyun-Sik Kim, B. P. Gila, D. P. Norton e S. J. Pearton. "Low specific contact resistance Ti∕Au contacts on ZnO". Applied Physics Letters 88, n. 12 (20 marzo 2006): 122107. http://dx.doi.org/10.1063/1.2187576.

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23

Fastow, R. "Contact resistance and noise of Sn/In/HgCdTe contacts". Solid-State Electronics 35, n. 7 (luglio 1992): 1025–26. http://dx.doi.org/10.1016/0038-1101(92)90338-d.

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Kempers, R., A. J. Robinson e A. Lyons. "Characterization of Thermal Contact Resistance in Metal Micro-Textured Thermal Interface Materials Using Electrical Contact Resistance Measurements". Defect and Diffusion Forum 297-301 (aprile 2010): 1190–98. http://dx.doi.org/10.4028/www.scientific.net/ddf.297-301.1190.

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A novel Metal Micro-Textured Thermal Interface Material (MMT-TIM) has been developed to address a number of shortcomings in conventional TIMs. This material consists of a thin metal foil with raised micro-scale features that plastically deform under an applied pressure thereby creating a continuous, thermally conductive, path between the mating surfaces. One of the difficulties in experimentally characterizing MMT-TIMs however, is distinguishing the bulk thermal resistance of the MMT-TIM from the thermal contact resistance that exists where it contacts the test apparatus. Since these materials are highly electrically conductive, this study attempts to employ electrical contact resistance measurements to estimate their thermal contact resistance. Tests using flat silver and gold specimens of known bulk thermal conductivity were used to develop a correlation between electrical and thermal contact resistance. This relationship was then employed to estimate the thermal contact resistance of a prototype silver MMT-TIM and indicates the thermal contact resistance accounts for approximately 10% of the measured thermal contact resistance. A number of issues related to this technique are discussed as well as its future outlook.

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A. Cividjian, Grigore. "Distorted constriction contact resistance between clamped slabs". COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 33, n. 4 (1 luglio 2014): 1366–78. http://dx.doi.org/10.1108/compel-07-2013-0250.

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Purpose – The purpose of this paper is the more exact evaluation of distorted constriction contact resistance between two clamped slabs or thin films, having a bi-dimensional current lines structure. Design/methodology/approach – Mathematical modeling using conformal mappings. Findings – The influence of the tarnish film on the distorted constriction resistance is clarified and three new exact formulas are proposed for the distorted constriction resistance between clamped slabs with rectangular contact spot. Comparisons with early proposed formula for constriction resistance of slab narrowing and with finite element analysis results are presented. Research limitations/implications – The research is limited to direct current and homogeneous and isotropic media and the results can be extended at alternate current when the skin effect is negligible. Practical implications – Exact evaluation of 2D constriction contact resistance which appears in macro-scale contacts electrical equipment and in MEMS devices, particularly in crimp contacts. Originality/value – The proposed formulas are new, original, simple and exact.

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Lee, Sangyoung, Hyun Cho e Yong Hoon Jang. "Multiscale electrical contact resistance in clustered contact distribution". Journal of Physics D: Applied Physics 43, n. 24 (3 giugno 2010): 249801. http://dx.doi.org/10.1088/0022-3727/43/24/c01.

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Lee, Sangyoung, Hyun Cho e Yong Hoon Jang. "Multiscale electrical contact resistance in clustered contact distribution". Journal of Physics D: Applied Physics 42, n. 16 (22 luglio 2009): 165302. http://dx.doi.org/10.1088/0022-3727/42/16/165302.

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TAMAI, T. "Friction and Contact Resistance through True Contact Interface". IEICE Transactions on Electronics E89-C, n. 8 (1 agosto 2006): 1122–28. http://dx.doi.org/10.1093/ietele/e89-c.8.1122.

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Jang, Yong Hoon, e J. R. Barber. "Effect of contact statistics on electrical contact resistance". Journal of Applied Physics 94, n. 11 (dicembre 2003): 7215–21. http://dx.doi.org/10.1063/1.1622995.

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YAKUBOV, A., A. SHERCHENKOV, P. LAZARENKO, A. BABICH, D. TEREKHOV e A. DEDKOVA. "CONTACT RESISTANCE MEASUREMENTS FOR THE Ge2Sb2Te5 THIN FILMS". Chalcogenide Letters 17, n. 1 (gennaio 2020): 1–8. http://dx.doi.org/10.15251/cl.2020.171.1.

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In this study contact resistances between the Ge2Sb2Te5 thin films and TiN/W electrodes were investigated by the transmission line model method. The influence of the heat treatment on the electrical characteristics of the Ge2Sb2Te5/electrode was investigated. Heat treatment at 150 °C leads to a significant drop in contact resistance due to crystallization of the thin Ge2Sb2Te5 film. The contribution of the contact resistance to the total contact resistance of the Ge2Sb2Te5 and TiN/W contact was analyzed and showed that the contribution of the contact resistance to the total resistance sufficiently increases for the Ge2Sb2Te5 film in the crystalline state.

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VANDAMME, L. K. J. "CHARACTERIZATION OF CONTACT INTERFACE, FILM SHEET RESISTANCE AND 1/f NOISE WITH CIRCULAR CONTACTS". Fluctuation and Noise Letters 10, n. 04 (dicembre 2011): 467–84. http://dx.doi.org/10.1142/s0219477511000740.

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The resistance and noise of films prepared with poor contacts are dominated by the contact interface and for perfect contacts holds that resistance and noise stem from outside the contact interface region. The proposed test pattern to study the different contributions uses one mask. It permits two- and four-point measurements enabling the detection of a weak contribution from outside the contact interface on top of a strong interface contribution. The resistance and noise for poor and perfect contacts are calculated between pairs of circular top electrodes of equal diameters 2r at distances L with L/2r = 10. The dependences of resistance and noise on the contact diameter are quite different for perfect and poor contacts. 1/f noise of films taken from literature are compared in the noise figure of merit K = Cus [ cm 2]/Rsh[Ω]. K is the ratio of 1/f noise normalized for bias, frequency and unit surface to sheet resistance. Materials can be classified based on K-values. Very high K-values point to inhomogeneous electric fields on a microscopic scale (percolation conduction). The contact interface 1/f noise and specific contact resistance are characterized by Cust [ cm 2] and ρct [Ω cm 2]. Reviews of K for films and Cust for interfaces show that 1/f noise is a more sensitive tool than merely the resistance parameters Rsh and ρct.

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Tadjer, Marko J., Travis J. Anderson, Karl D. Hobart, Tatyana I. Feygelson, James E. Butler e Fritz J. Kub. "Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films". Materials Science Forum 645-648 (aprile 2010): 733–35. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.733.

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Nanocrystalline diamond (NCD) films were deposited using plasma-enhanced chemical vapor deposition. The NCD films were Boron-doped for p-type conductivity, yielding sheet resistances from 6.17x1011 to 522.5 /. Four different metals were deposited as Ohmic contacts and investigated for contact resistance and thermal stability. Contact and film annealing was performed under different atmospheric conditions with variable N2 content.

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de Silva, Milantha, Teruhisa Kawasaki e Shinichiro Kuroki. "Low Resistance Ti₅Si₃/TiC Ohmic contact on Ion-Implanted n-Type 4H-SiC C Face". Materials Science Forum 924 (giugno 2018): 409–12. http://dx.doi.org/10.4028/www.scientific.net/msf.924.409.

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Low-resistance Ohmic contact on n+4H-SiC C-face with Titanium was demonstrated. In a conventional NiSi Ohmic contat on n-type 4H-SiC, a carbon agglomeration at the silicide/SiC interface occurs, and contact resistance becomes larger. For suppressing the carbon agglomeration, laser annealing and Ti metal were introduced to form both silicide and carbide. Ti (75 nm)/SiC and Ni (75 nm)/SiC Ohmic contacts were formed on backside C-face of high concentration impurity doped 4H-SiC substrates with and without activation annealing. Electrical properties were investigated after 40 nanoseconds pulse laser annealing in Ar ambient. As the result, the lowest specific contact resistance of 7.9×10-5Ωcm2was obtained in Ti (75 nm)/SiC sample in the case of ion implanted sample at 500°C and with activation annealing at a laser power of 2.2 J/cm2.

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Suzuki, Yu, Etsushi Taguchi, Shouhei Nagata e Masataka Satoh. "Evaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100)". Materials Science Forum 556-557 (settembre 2007): 705–8. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.705.

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The specific contact resistance of Al, Ti and Ni ohmic contacts to N+ implanted 3C-SiC(100) has been investigated by means of TLM method. The p-type epitaxial layer grown on n+ substrate is multiply implanted with N ions with energy ranging from 15 to 120 keV at a total dose of 1.4×1015 cm-2 at room temperature and is subsequently annealed by RF annealer at a temperature of 1400 oC for 10 min in Ar gas flow, resulting in the sheet resistance of 130 0/sq. The deposited Al layer on the annealed sample shows the extremely low specific contact resistance of about 1×10-7 0cm2. The ohmic contacts of Ti and Ni also show the specific contact resistance of 5×10-6 and 2×10-5 0cm2, respectively. The obtained specific contact resistance is proportional to the Schottky barrier height of metal cotact to n-type 3C-SiC. The annealing of Ni ohmic contact above 600 oC results in the considerable reduction of specific contact resistance due to the silicidation of Ni.

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Holland, Anthony, Yue Pan, Mohammad Alnassar e Stanley Luong. "Circular test structures for determining the specific contact resistance of ohmic contacts". Facta universitatis - series: Electronics and Energetics 30, n. 3 (2017): 313–26. http://dx.doi.org/10.2298/fuee1703313h.

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Though the transport of charge carriers across a metal-semiconductor ohmic interface is a complex process in the realm of electron wave mechanics, such an interface is practically characterised by its specific contact resistance. Error correction has been a major concern in regard to specific contact resistance test structures and investigations by finite element modeling demonstrate that test structures utilising circular contacts can be more reliable than those designed to have square shaped contacts as test contacts become necessarily smaller. Finite element modeling software NASTRAN can be used effectively for designing and modeling ohmic contact test structures and can be used to show that circular contacts are efficient in minimising error in determining specific contact resistance from such test structures. Full semiconductor modeling software is expensive and for ohmic contact investigations is not required when the approach used is to investigate test structures considering the ohmic interface as effectively resistive.

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Ingerly, D. B., Y. A. Chang e Y. Chen. "NiIn as an Ohmic Contact to P-GaN". MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 745–50. http://dx.doi.org/10.1557/s1092578300003355.

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Based on the criteria for the solid state exchange reaction with p-GaN, we have investigated the intermetallic compound NiIn as a possible ohmic contact. The contacts were fabricated by depositing NiIn on p-GaN films (p ∼ 2 × 1017 cm−3) using RF sputtering from a compound target. The as-deposited, NiIn contacts were found to be rectifying and using I-V characterization a Schottky barrier height of 0.82 eV was measured. Rapid thermal annealing of the contacts was shown to significantly decrease their resistance, with contacts annealed at 800 °C for 1 min yielding the lowest resistance. When annealed at 800 °C for 1 min NiIn contacts exhibited a specific contact resistance of 8-9 × 10−3 Ω cm2 as measured by the circular transmission line model. To allow a more universal comparison the more traditional Ni/Au contacts, processed under the same conditions, were used as a standard. Their measured specific contact resistance (ρc = 1.2 − 2.1 × 10−2 Ωcm2) was significantly higher than that of the NiIn contacts. Demonstrating that NiIn has promise as an ohmic contact to p-GaN and should be studied in greater detail.

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37

Gupta, Rahul P., Robin McCarty, Jim Bierschenk e Jeff Sharp. "Practical electrical contact resistance measurement method for bulk thermoelectric devices". MRS Proceedings 1490 (2013): 153–59. http://dx.doi.org/10.1557/opl.2012.1730.

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ABSTRACTAs thermoelectric (TE) element length decreases, the impact of contact resistance on TE device performance grows more significant. In fact, for a TE device containing 100-μm tall Bi2Te3TE elements, the figure of merit ratio (ZTDevice/ZTMaterial) drops from 0.9 to 0.5 as the contact resistivity increases from 5 x 10-07 to 5 x 10-06 Ω-cm2. To understand the effects of contact resistance on bulk TE device performance, a reliable experimental measurement method is needed. There are many popular methods to extract contact resistance such as Transmission Line Measurements (TLM) and Kelvin Cross Bridge Resistor method (KCBR), but they are only well-suited for measuring metal contacts on thin films and do not necessarily translate to measuring contact resistance on bulk thermoelectric materials. The authors present a new measurement technique that precisely measures contact resistance (on the order of 5 x 10-07 Ω-cm2) on bulk thermoelectric materials by processing stacks of bulk, metal-coated TE wafers using TE industry standard processes. One advantage of this technique is that it exploits realistic TE device manufacturing techniques and results in an almost device-like structure, therefore representing a realistic value for electrical contact resistance in a bulk TE device. Contact resistance measurements for metal contacts to n- and p-type Bi2Te3 alloys are presented and an estimate of the accuracy of the measurements is discussed.

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38

Sun, Zewen, Minsu Cho, Lei Huang, Ryota Hijiya, Yoshimine Kato e Kungen Teii. "Electrical Characteristics of Metal Contacts to Carbon Nanowalls". ECS Journal of Solid State Science and Technology 11, n. 6 (1 giugno 2022): 061012. http://dx.doi.org/10.1149/2162-8777/ac6a77.

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The electrical characteristics of metal contacts to vertically-aligned nanographite structures, the so-called carbon nanowalls (CNWs), are examined using nickel as the electrode material. The total resistance between a pair of electrodes on CNWs is regarded as the sum of the serial resistance of CNWs and two metal-CNWs contacts to measure the contact resistance and specific contact resistivity by the transmission line method and transfer line method, respectively. The contact resistance and resistivity are around 2.8 Ω and 0.1 Ω cm2, respectively, at room temperature and decrease gently to 2.4 Ω and 0.06 Ω cm2, respectively, when the temperature is increased up to 300 °C. The apparent activation energy corresponding to the conduction barrier at the contact is in the range of 10−3 eV to 10−2 eV, which is comparable with that for the sheet resistance of CNWs. The contact resistance occupies a large portion of the total resistance between a pair of electrodes even at high temperatures, thus affecting electrical signal measurement in electronic and electrochemical device applications.

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39

Tamaso, Hideto, Shunsuke Yamada, Hiroyuki Kitabayashi e Taku Horii. "Ti/Al/Si Ohmic Contacts for both n-Type and p-Type 4H-SiC". Materials Science Forum 778-780 (febbraio 2014): 669–72. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.669.

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An ohmic contact process by using tri-layer materials for a source contact of a silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) is proposed. The authors validate its extremely low contact resistance for both n-type and p-type SiC by a simple process. The characteristics of Ti/Al/Si ohmic contacts were measured by using the transfer length method (TLM). We examined the dependence of the contact resistance on the thickness of each layer of Ti/Al/Si. Then, it is found that Ti/Al/Si contacts with an appropriate thickness show excellent ohmic properties for both n-type and p-type SiC. N-type specific contact resistance (ρn) of 3.7 × 10-6 Ω cm2 and p-type specific contact resistance (ρp) of 1.7 × 10-4 Ω cm2 are obtained with Ti (20 nm) /Al (30 nm) /Si (30 nm).

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40

Nimmala, Seshu, S. Aria Hosseini, Jackson Harter, Todd Palmer, Eric Lenz e P. Alex Greaney. "Characterizing Macroscopic Thermal Resistance Across Contacting Interfaces Through Local Understanding of Thermal Transport". MRS Advances 3, n. 44 (2018): 2735–41. http://dx.doi.org/10.1557/adv.2018.485.

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ABSTRACTThermal resistance across the interface between touching surfaces is critical for many industrial applications. We developed a network model to predict the macroscopic thermal resistance of mechanically contacting surfaces. Contacting interfaces are fractally rough, with small islands of locally intimate contact separated by regions with a wider gas filled boundary gap. Heat flow across the interface is therefore heterogeneous and thus the contact model is based on a network of thermal resistors representing boundary resistance at local contacts and the access resistance for lateral transport to contacts. Molecular dynamics simulations have been performed to characterize boundary resistance of Silicon Alumina interfaces for testing the sensitivity of thermal resistance to contact opening. Boltzmann transport simulations of access resistance in Si are conducted in the ballistic transport regime.

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41

Wei, P. S., e T. H. Wu. "Electrical contact resistance effect on resistance spot welding". International Journal of Heat and Mass Transfer 55, n. 11-12 (maggio 2012): 3316–24. http://dx.doi.org/10.1016/j.ijheatmasstransfer.2012.01.040.

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42

Штерн, М. Ю., И. С. Караваев, М. С. Рогачев, Ю. И. Штерн, Б. Р. Мустафоев, Е. П. Корчагин e А. О. Козлов. "Методики исследования электрического контактного сопротивления в структуре металлическая пленка--полупроводник". Физика и техника полупроводников 56, n. 1 (2022): 31. http://dx.doi.org/10.21883/ftp.2022.01.51808.24.

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The electrical contact resistance significantly affects the efficiency of thermoelements. In the case of high doped thermoelectric materials, the tunneling mechanism of conductivity prevails at metal-semiconductor interface, which makes it possible to obtain a contact resistance of less than 10-8 Ohm•m2. Low resistance values significantly complicate its experimental determination. Work present three techniques and a measuring stand for the investigation of contact resistance. The techniques are based on the measurement of the total electrical resistance, which consists of transient contact resistance and the resistance of the thermoelectric material with its subsequent exclusion. The developed techniques differ in the arrangement of the investigated contacts on the samples, in the methods of measurement and processing of the obtained results, and make it possible to determine the specific contact resistance of the order of 10-10 Ohm•m2.

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43

Cubukcu, M., M. B. Martin, P. Laczkowski, C. Vergnaud, A. Marty, J. P. Attané, P. Seneor et al. "Ferromagnetic tunnel contacts to graphene: Contact resistance and spin signal". Journal of Applied Physics 117, n. 8 (28 febbraio 2015): 083909. http://dx.doi.org/10.1063/1.4913710.

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44

Hewett, C. A., M. J. Taylor, J. R. Zeidler e M. W. Geis. "Specific contact resistance measurements of ohmic contacts to semiconducting diamond". Journal of Applied Physics 77, n. 2 (15 gennaio 1995): 755–60. http://dx.doi.org/10.1063/1.358996.

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45

Umemura, S., K. Yasuda e T. Aoki. "Contact resistance characteristics of noble metal alloys for connector contacts". IEEE Transactions on Components, Hybrids, and Manufacturing Technology 14, n. 1 (marzo 1991): 181–86. http://dx.doi.org/10.1109/33.76529.

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46

Parihar, S. K., e N. T. Wright. "Thermal Contact Resistance of Silicone Rubber to AISI 304 Contacts". Journal of Heat Transfer 121, n. 3 (1 agosto 1999): 700–702. http://dx.doi.org/10.1115/1.2826035.

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47

Mohney, S. E., Y. Wang, M. A. Cabassi, K. K. Lew, S. Dey, J. M. Redwing e T. S. Mayer. "Measuring the specific contact resistance of contacts to semiconductor nanowires". Solid-State Electronics 49, n. 2 (febbraio 2005): 227–32. http://dx.doi.org/10.1016/j.sse.2004.08.006.

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48

Hamamoto, T., T. Ozaki, M. Aoki e Y. Ishibashi. "Measurement of contact resistance distribution using a 4k-contacts array". IEEE Transactions on Semiconductor Manufacturing 9, n. 1 (1996): 9–14. http://dx.doi.org/10.1109/66.484277.

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49

Leong, Wei Sun, Hao Gong e John T. L. Thong. "Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts". ACS Nano 8, n. 1 (19 dicembre 2013): 994–1001. http://dx.doi.org/10.1021/nn405834b.

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50

TAMAI, Terutaka, Masahiro YAMAKAWA e Yuta NAKAMURA. "Effect of Contact Lubricant on Contact Resistance Characteristics — Contact Resistance of Lubricated Surface and Observation of Lubricant Molecules —". IEICE Transactions on Electronics E99.C, n. 9 (2016): 985–91. http://dx.doi.org/10.1587/transele.e99.c.985.

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