Bibliografie tematiche / Contact resistance

Letteratura scientifica selezionata sul tema "Contact resistance"

Autore: Grafiati

Pubblicato: 4 giugno 2021

Ultima modifica: 22 febbraio 2023

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Articoli di riviste sul tema "Contact resistance"

Cumberbatch, E., e G. Mahinthakumar. "Contact resistance for small contacts (MOSFET)". IEEE Transactions on Electron Devices 38, n. 12 (1991): 2669–72. http://dx.doi.org/10.1109/16.158689.

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Krutova, Y. A. "Contact resistance of rectangular contact". Челябинский физико-математический журнал 6, n. 2 (2021): 162–71. http://dx.doi.org/10.47475/2500-0101-2021-16203.

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Ye, Gangfeng, Kelvin Shi, Robert Burke, Joan M. Redwing e Suzanne E. Mohney. "Ti/Al Ohmic Contacts to n-Type GaN Nanowires". Journal of Nanomaterials 2011 (2011): 1–6. http://dx.doi.org/10.1155/2011/876287.

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Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid10−8 Ωcm2) upon annealing at 600 °Cfor 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C) to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

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Ren, Wanbin, Yu Chen, Zhaobin Wang, Shengjun Xue e Xu Zhang. "Electrical Contact Resistance of Coated Spherical Contacts". IEEE Transactions on Electron Devices 63, n. 11 (novembre 2016): 4373–79. http://dx.doi.org/10.1109/ted.2016.2612545.

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Norberg, G., S. Dejanovic e H. Hesselbom. "Contact resistance of thin metal film contacts". IEEE Transactions on Components and Packaging Technologies 29, n. 2 (giugno 2006): 371–78. http://dx.doi.org/10.1109/tcapt.2006.875891.

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Crofton, John, John R. Williams, A. V. Adedeji, James D. Scofield, S. Dhar, Leonard C. Feldman e M. J. Bozack. "Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC". Materials Science Forum 527-529 (ottobre 2006): 895–98. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.895.

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Nickel ohmic contacts to p-type epitaxial and heavily implanted 4H-SiC are described. Room and elevated temperature results are presented. Elevated temperature measurements of specific contact resistance are compared to theoretical calculations. The calculations require the acceptor doping concentration and the contact’s barrier height. Epitaxial material has a known acceptor value thereby allowing the barrier height to be deduced by requiring agreement between the calculated and measured values of the contact resistance. Calculations of the contact resistance for implanted material use the barrier height from the epitaxial results along with a variable activated acceptor doping concentration which is adjusted to give agreement with measured room temperature specific contact resistances. Specific contact resistances as low as 7x10-6 ohm-cm2 fabricated on the Si face have been obtained to epitaxial 4H p-type material whereas contacts to implanted material result in much larger contact resistance values of 4x10-5 ohm-cm2. These results, when compared to theoretical calculations, indicate that activated acceptor doping concentrations in heavily implanted material are on the order of 2% of the implant concentration.

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Hemant Kagra, Hemant Kagra. "Impact of Surface Film on Electrical Contact Resistance of Silver Impregnated Graphite Contacts". Indian Journal of Applied Research 3, n. 5 (1 ottobre 2011): 234–37. http://dx.doi.org/10.15373/2249555x/may2013/71.

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Gracheva, E. I., A. N. Gorlov, A. N. Alimova e P. P. Mukhanova. "Resistance change of contact groups of low-voltage electrical apparatus: Determining the laws". Vestnik MGTU 24, n. 4 (30 dicembre 2021): 350–60. http://dx.doi.org/10.21443/1560-9278-2021-24-4-350-360.

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The main Russian and foreign manufacturers of low-voltage electrical devices - circuit breakers, fuses, magnetic starters, knife switches and packet switches are presented. The data of experiments for determining the resistance values of contact groups of low-voltage switching equipment are considered. The design features of the devices that determine the value of the resistances of the power circuits of low-voltage equipment are investigated and a classification is proposed depending on the design elements of the devices. A methodological approach and an algorithm for experiments and detailed analysis of the contact groups of devices are given. Experimental schemes for the study of contact groups are proposed. The data of the conducted experiments on the study of contact groups and the resistance values as a function of the flowing currents are shown. During the experiments it is revealed that the value of the resistance of the contacts changes depending on the value, type and time of exposure to current within +/-5 %. The laws that characterize the ratio of the resistance values of the structural components of devices (contact systems, thermal relay, coil of the maximum relay) have been revealed and defined. Empirical expressions and graphical dependences of the resistances of contacts and contact systems are obtained as a function of the magnitude of the rated currents of low-voltage contact equipment. The minimum sample size of the number of devices during experimental research is determined, sufficient to calculate the mathematical expectation of the resistances of the contact connections of the devices with a given accuracy. As a result of experimental studies, it is revealed that the resistance value of contacts and contact joints can increase during operation by 2-2.5 times. The established dependences of the change in contact resistance can be used to predict the technical state of electrical installations of intrashop low-voltage networks, to clarify the amount of electricity losses in shop networks up to 1 kV, and can also be used as an additional regulation for maintenance and scheduled preventive maintenance.

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Spiesser, A., R. Jansen, H. Saito e S. Yuasa. "Optimum contact resistance for two-terminal magnetoresistance in a lateral spin valve". Applied Physics Letters 122, n. 6 (6 febbraio 2023): 062407. http://dx.doi.org/10.1063/5.0137482.

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The two-terminal magnetoresistance (2T-MR) due to spin accumulation in a lateral spin valve is determined for devices with a Si channel and Fe/MgO tunnel contacts of varying MgO thickness. Established theory predicts that the 2T-MR exhibits a pronounced maximum for contact resistances comparable to the spin resistance rs of the channel. At large contact resistance ([Formula: see text]), the 2T-MR is, indeed, very small, despite the large tunnel spin polarization (TSP) of the contacts (90%). When the contact resistance is reduced toward rs, the 2T-MR increases, but much less than expected because for thinner MgO the TSP decays. For devices with the thinnest MgO and contact resistances near the predicted optimum, the 2T-MR is actually lower, owing to the smaller TSP (14%). The optimum and scaling of the 2T-MR are, thus, profoundly affected by the variation of the TSP with contact resistance. This is relevant for the design of practical two-terminal devices, including those with channel materials other than Si.

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LOSKUTOV, S. V., M. O. SCHETININA e O. A. ZELENINA. "CONTACT RESISTANCE MODELING". Electrical Engineering and Power Engineering, n. 1 (31 maggio 2018): 22–29. http://dx.doi.org/10.15588/1607-6761-2018-1-3.

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Più fonti

Tesi sul tema "Contact resistance"

Jovell, Megias Ferran. "Contact resistance and electrostatics of 2DFETs". Doctoral thesis, Universitat Autònoma de Barcelona, 2018. http://hdl.handle.net/10803/664041.

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Durant la darrera dècada, la popularització del grafè i altres materials de dues dimensions (2D) ha revolucionat la ciència de materials. Els nous fenòmens físics que esdevenen en aquests nous materials obren les possibilitats per a nous dispositius amb característiques extraordinàries. En el camp de l’electrònica d’alta freqüència, per alguns d'aquests dispositius s'ha predit que poden obrir el forat que hi ha actualment en el rang del terahertz. En aquesta tesis s'han fet servir diferents tècniques de simulació per estudiar diferents dispositius en l'entorn d'alta freqüència en ment. En primer lloc, un transistor d'efecte de camp compost per una mono capa de disulfit de molibdè (MoS$_2$) ha estat estudiat fent servir el model de deriva difusió. Per aprofundir en això, s'ha estudiat també una unió $p-n$ amb aquest mateix material. Malgrat que el model de deriva difusió està pensat per materials convencionals, s'ha fet servir un conjunt de paràmetres efectius per tal de reproduir les dades experimentals. Amb aquest conjunt de paràmetres, ha estat possible reproduir el corrent de sortida d'aquest transistor tot i que no el període de transició. D’altra banda, els resultats de la unió $p-n$ han estat molt valuosos per a l'estudi de la zona de depleció. Un dels obstacles a superar per poder poder utilitzar grafè i altres materials 2D en aplicacions d'alta freqüència, per tal de no comprometre el rendiment d'aquests dispositius, és el d'obtenir una resistència de contact (R$_c$) prou baixa. En aquesta tesi, s'ha proposat d'afegir una capa intermèdia de grafit entre el contacte metàl·lic i el canal de grafè per tal de reduir la resistència de contacte per sota dels 100 $\Omega\cdot\mu$m que sovint es cita com el límit del qual pot limitar el rendiment dels transistors d'efecte de camp. Un contacte de tipus ``top'' s'ha fet servir per a l'estructura de grafit-grafè que és molt convenient per simulacions de transport balístic mitjançant la teoria de la densitat del funcional juntament amb la teoria del no equilibri de green per a calcular aquesta resistència. En particular, s'han simulat diverses longituds de superposició del grafè sobre el contacte de grafit per tal d'estudiar-ne el seu efecte. S'ha observat que per a concentracions de portadors intrínseques, la resistència de contacte és molt alta, però per a làmines de grafè dopades, aquesta resistència decau per sota del límit citat. Per tal d'avaluar aquests resultats, s'ha estudiat el camí de corrent mitjançant el formalisme d’autocanals. Aquesta anàlisi demostra que la transferència d'electrons es duu a terme mitjançant l'àrea de solapament en comptes de la vora. El cas de vora també ha estat considerat com a referència per ser el cas límit. S'ha conclòs que una capa de grafit abans de la capa de grafè és viable per tal de reduir la resistència de contacte en els contactes metall-grafè. Finalment, per tal d'entendre amb profunditat alguns dels resultats experimentals pel què fa a la resistència de contacte entre un metall i el grafè, l'objectiu és de generar estructures realistes mitjançant la dinànima molecular. Per a tal fi, el primer pas és el de parametritzar l'enllaç metall-carboni. El potencial d'odre d'enllaç fou escollit ja que és el potencial indicat per descriure aquesta mena d'enllaços covalents. Les interaccions metall-metall foren descrites pel potencial d'àtom incrustat, i la l'enllaç carboni-carboni pel potencial de Tersoff. El potencial de l'ordre d'enllaç està caracteritzat per un conjunt de deu paràmetres que descriuen les característiques de l'enllaç com són la distància d'equilibri o l'energia d'enllaç, entre altres. Mitjançant l'algorisme de Monte Carlo temperat paral·lel, s'ha pogut obtenir un conjunt de paràmetres per a la interacció Pd-C i Ni-C.
In the last decade, the rise of graphene and other 2-dimensional materials revolutionized materials science. The new physics brought by these new materials opened up the possibilities of new devices with outstanding characteristics. In the field of radiofrequency electronics, some of these devices are predicted to bridge the terahertz gap in the frequency spectrum. In this thesis, several simulation techniques have been employed to study different devices with this long term goal in mind. In first place, a single-layer molybdenum disulfide (MoS$_2$) field effect transistor (FET) has been studied using the drift-diffusion model. To delve deeper into this, a MoS$_2$ $p-n$ junction has also been studied in this framework. Even though the drift-diffusion model is suited for bulk materials, a set of effective parameters was found. With it, it has been possible to reproduce the on-current of experimental data of the single-layer MoS$_2$ FET, but not the subthreshold swing. On the other hand, the MoS$_2$ $p-n$ junction yielded valuable results for the study of the depletion region. One of the hurdles that must be overcome in order to harness the possibilities of graphene and other 2D materials so that the performance of high frequency devices is not compromised is to achieve a low enough contact resistance (R$_c$) between the metal contact and the channel. In this thesis, an intermediate graphite layer between the metal contact and the graphene layer is proposed in order to achieve the 100 $\Omega\cdot\mu$m mark that is often quoted to be the upper limit for $R_c$ not to be the limiting factor. A graphite-graphene top contact structure is proposed and studied under ballistic transport by density functional theory (DFT) and Non-Equilibrium Green's Function Theory (NEGF) to calculate the contact resistance. In particular, several overlap amounts between graphene over the graphite bulk were studied. The results obtained are very promising for doped samples of graphene. To assess these results, a current path analysis was conducted using the eigenchannel formalism. This analysis showed that the transfer of electrons was done through the area of contact instead of an edge. It was concluded that graphite was a suitable buffer to reduce R$_c$ for metal-graphene contacts. Finally, in order to understand better some of the experimental results in the contact resistance of metal-graphene contacts, the objective was to generate realistic atomic configurations using Molecular Dynamics. For that, a first step is to parametrize the metal-carbon interactions. The bond order potential (BOP) force field was chosen for this as it is a force field that can accurately describe the metal-carbon covalent bond. The metal-metal bond is described using the embeded atom potential (EAM) and the carbon-carbon interaction, by the Tersoff force field. The BOP force field has a ten parameter set that describe the characteristics of the bond: equilibirum distance, bond energy, etc. Using Parallel Tempering Monte Carlo (PTMC) optimisation algorithm trained from first principles calculations of small metal particles on top of a graphene sheet, a set of parameters for the BOP force field was obtained for the Pd-C and Ni-C pairs.

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Gibbins, Josh. "Thermal Contact Resistance of Polymer Interfaces". Thesis, University of Waterloo, 2006. http://hdl.handle.net/10012/2856.

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In this study an experimental program was carried out to determine the thermal contact resistance at polymer interfaces. Specifically, a polycarbonate to stainless steel interface along with a polycarbonate to polycarbonate interface were investigated. The thermal contact resistance at a stainless steel to stainless steel interface was also investigated for comparison purposes. Experimental data was obtained over a pressure range of approximately 600 - 7000 kPa, in a vacuum environment.

The experimental data was compared to the CMY plastic contact model, the Mikic elastic contact model and the SY elasto-plastic contact model to investigate the ability of such established thermal contact models to predict the thermal contact resistance at polymer interfaces. Based upon predictions made in regards to the mode of deformation of the asperities on the contacting surfaces the appropriate contact model showed good agreement with the experimental data for the stainless steel-stainless steel data set and the polycarbonate-stainless steel data sets. There was poor agreement between the all three contact models and the experimental data for the polycarbonate-polycarbonate data sets. It was determined that uncertainties in the proposed experimental method prevented an accurate measurement of the thermal contact resistance values for the polycarbonate-polycarbonate data sets.

The purpose of this investigation was to extend the use of established thermal contact models to polymer interfaces and to provide a comparison between the thermal contact resistance values of metal and polymer interfaces.

Thermal contact resistance for the polymer to metal interface was shown to be predicted by the Mikic elastic contact model in comparison to the metal to metal interface which was shown to be predicted by the CMY plastic contact model. The thermal contact resistance for a polymer interface was found to be on the same order as a metal interface.

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Almeida, Lia Ramadoss Ramesh. "Experimental and theoretical investigation of contact resistance and reliability of lateral contact type ohmic MEMS relays". Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Fall/Theses/ALMEIDA_LIA_13.pdf.

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Reshamwala, Chetak M. (Chetak Mahesh) 1979. "Contact resistance in RFID chip-antenna interfaces". Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/8193.

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Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2001.
Includes bibliographical references (p. 21).
The purpose of this study was to determine a force-deflection relationship and a force-contact area relationship between a flat planar solid and a spherical solid in terms of material and surface properties of the two bodies. This relationship was determined and it was discovered that the force was directly proportional to both the deflection and contact area. This information is useful in the design and performance of RFID chips. The RFID chip-antenna interface is the area of greatest power loss in the system, and by determining a relationship to increase the contact area in that region, the power loss to the antenna can be reduced. Moreover, an analysis including asperities on the micro scale geometry of the solids was conducted. In the final approach to the problem, a random distribution of asperity types was analyzed. An expression was derived for the total force applied in terms of a given deflection and a range of asperity radii of curvature. A three-dimensional graph was created to show how each of these variables depends on the each other when asperities exist. This relationship is very significant, because it can be used to improve current RFID chip technology to achieve better performance. This expression can also be used to determine specifications in the manufacturing process to achieve a certain deflection or area of contact between the contacting bodies, thereby improving the current manufacturing process.
by Chetak M. Reshamwala.
S.B.

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Wilson, W. Everett Jackson Robert L. "Surface separation and contact resistance considering sinusoidal elastic-plastic multiscale rough surface contact". Auburn, Ala, 2008. http://hdl.handle.net/10415/1490.

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Gill, Jennifer. "AN INVERSE ALGORITHM TO ESTIMATE THERMAL CONTACT RESISTANCE". Master's thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2546.

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Thermal systems often feature composite regions that are mechanically mated. In general, there exists a significant temperature drop across the interface between such regions which may be composed of similar or different materials. The parameter characterizing this temperature drop is the thermal contact resistance, which is defined as the ratio of the temperature drop to the heat flux normal to the interface. The thermal contact resistance is due to roughness effects between mating surfaces which cause certain regions of the mating surfaces to loose contact thereby creating gaps. In these gap regions, the principal modes of heat transfer are conduction across the contacting regions of the interface, conduction or natural convection in the fluid filling the gap regions of the interface, and radiation across the gap surfaces. Moreover, the contact resistance is a function of contact pressure as this can significantly alter the topology of the contact region. The thermal contact resistance is a phenomenologically complex function and can significantly alter prediction of thermal models of complex multi-component structures. Accurate estimates of thermal contact resistances are important in engineering calculations and find application in thermal analysis ranging from relatively simple layered and composite materials to more complex biomaterials. There have been many studies devoted to the theoretical predictions of thermal contact resistance and although general theories have been somewhat successful in predicting thermal contact resistances, most reliable results have been obtained experimentally. This is due to the fact that the nature of thermal contact resistance is quite complex and depends on many parameters including types of mating materials, surface characteristics of the interfacial region such as roughness and hardness, and contact pressure distribution. In experiments, temperatures are measured at a certain number of locations, usually close to the contact surface, and these measurements are used as inputs to a parameter estimation procedure to arrive at the sought-after thermal contact resistance. Most studies seek a single value for the contact resistance, while the resistance may in fact also vary spatially. In this thesis, an inverse problem (IP) is formulated to estimate the spatial variation of the thermal contact resistance along an interface in a two-dimensional configuration. Temperatures measured at discrete locations using embedded sensors appropriately placed in proximity to the interface provide the additional information required to solve the inverse problem. A superposition method serves to determine sensitivity coefficients and provides guidance in the location of the measuring points. Temperature measurements are then used to define a regularized quadratic functional that is minimized to yield the contact resistance between the two mating surfaces. A boundary element method analysis (BEM) provides the temperature field under current estimates of the contact resistance in the solution of the inverse problem when the geometry of interest is not regular, while an analytical solution can be used for regular geometries. Minimization of the IP functional is carried out by the Levenberg-Marquadt method or by a Genetic Algorithm depending on the problem under consideration. The L-curve method of Hansen is used to choose the optimal regularization parameter. A series of numerical examples are provided to demonstrate and validate the approach.
M.S.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Mechanical Engineering

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Taphouse, John Harold. "Thermal contact resistance in carbon nanotube forest interfaces". Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/54853.

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The continued miniaturization and proliferation of electronics is met with significant thermal management challenges. Decreased size, increased power densities, and diverse operating environments challenge the limitations of conventional thermal management schemes and materials. To enable the continuation of these trends thermal interface materials (TIMs) that are used to enhance heat conduction and provide stress relief between adjacent layers in a electronic package must be improved. Forests comprised of nominally vertically aligned carbon nanotubes (CNTs), having outstanding thermal and mechanical properties, are excellent candidates for next-generation thermal interface materials (TIMs). However, despite nearly a decade of research, TIMs based on vertically aligned CNT forests have yet to harness effectively the high thermal conductivity of individual CNTs. One of the key obstacles that has limited the performance of CNT TIMs is the presence of high thermal contact resistances between the CNT free ends and the surfaces comprising the interface. The aim of this research is to better understand the mechanisms by which the thermal contact resistance of CNT forest thermal interfaces can be reduced and to use this understanding towards the design of effective and to scalable processing methods. Contact area and weak bonding between the CNT tips and opposing surface are identified as factors that contribute significantly to the thermal contact resistance. Three strategies are explored that utilize these mechanisms as instruments for reducing the contact resistance; i) liquid softening, ii) bonding with surface modifiers, and iii) bonding with nanoscale polymer coatings. All three strategies are found to reduce the thermal contact resistance at the CNT forest tips to below 1 mm2-K/W, a value to where it is no longer the factor limiting heat conduction in CNT forest TIMs. These strategies are also relatively low-cost and amenable to scaling for production when compared to existing metal-based bonding strategies.

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Yang, Yulin. "Evaluation of rolling contact fatigue resistance for coated components". Thesis, University of Hull, 2003. http://hydra.hull.ac.uk/resources/hull:8534.

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The thesis reviews and studies current evaluation mechanisms, techniques and machines for testing rolling contact fatigue failure resistance and load capacity of coated components. The thesis investigates both normal and accelerated rolling contact fatigue evaluation test mechanisms and their models, and evaluation test technique principles suitable to the appraisal of coated bearing components. A major contribution of the thesis is the design and development of a new rolling contact fatigue evaluation test machine for coated components. Tests of the rolling contact fatigue of coated bearing raceways under the oil lubricant, grease lubricant and no lubricant conditions, applying the new rolling contact fatigue evaluation mechanisms, evaluation technique principles and the new test machine, have been performed. The accelerated rolling contact fatigue tests of the coated bearing raceways use SiC powder in the oil lubricant. The new rolling contact fatigue test machine has been found suitable for evaluating the rolling contact fatigue resistance of components with superhard coatings. The accelerated rolling contact fatigue test method has been shown to give comparable rolling contact fatigue test results to those obtained in a normal rolling contact fatigue test, while being much faster. In the fatigue test, the cyclic maximum shear stress produces an initial fatigue crack near the substrate surface of the test bearing raceways. The observed phenomena are consistent with theory, although the location of the initial crack is much closer to the surface than would be predicted by a 'static' Hertzian analysis. Insufficient traction forces on the contact surface between the rolling elements of a test coated bearing makes gross skidding occur, leading to rapid wear, over-heating and final failure of the test coated bearing. The LSO fatigue life of the test coated bearing raceway tends to decrease with increase of the coating thickness and coating hardness of the test coated bearing raceway.

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Sun, Ta-chien. "Fundamental study of contact resistance behavior in RSW aluminum". Connect to this title online, 2003. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1069807481.

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Thesis (Ph. D.)--Ohio State University, 2003.
Title from first page of PDF file. Document formatted into pages; contains xxviii, 314 p.; also includes graphics (some col.) Includes bibliographical references (p. 303-314). Available online via OhioLINK's ETD Center

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Li, Wei 1967. "Determination of the relationship between thermal contact resistance and contact pressure based on their distributions". Thesis, McGill University, 1994. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=26402.

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Loading conditions in a machine structure usually cause the contact pressure at the joints to take the form of a distribution, which in turn causes thermal contact resistance to be position-dependent also.
In the experiments described in this thesis, two thin-plate specimens of steel under plane-stress loading conditions generating contact pressure distributions of various profiles at the interface, were subjected to a thermal field. Temperature measurements served as reference for the finite element modelling which, through consecutive iterations, provided the values for the thermal contact resistance distributions. Combined mechanical contact pressure and thermal contact stress distributions were considered at the interface.
The function representing the relationship between thermal contact resistance and contact pressure for various distributions was defined using the least squares method. It was revealed that although this relationship can be expressed by the single function for the whole experimental range, the deviations experienced for different slopes and forms of distributions (convex and concave), particularly noticeable for steep slopes at high contact pressure levels, could indicate the effect of macro-constriction resistance, however small its values according to the theoretical calculations might be.

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Più fonti

Libri sul tema "Contact resistance"

Cenek, P. D. Rolling resistance characteristics of New Zealand roads. Wellington, N.Z: Transit New Zealand, 1996.

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Tranoudis. Oxygen permeability refractive index and scratch resistance ofrigid contact lens materials. Manchester: UMIST, 1993.

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Gestalt reconsidered: A new approach to contact and resistance / by Gordon Wheeler. New York: Gardner Press, 1991.

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Evans, R. W. Electrical bonding: A survey of requirements, methods, and specifications. MSFC, Ala: National Aeronautics and Space Administration, Marshall Space Flight Center, 1998.

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Fatemi, Navid S. The achievement of low contact resistance to indium phosphide: The roles of Ni, Au, Ge, and combinations thereof. [Washington, DC: National Aeronautics and Space Administration, 1992.

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S, Fatemi Navid, e United States. National Aeronautics and Space Administration., a cura di. A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1991.

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Enduring conquests: Rethinking the archaeology of resistance to Spanish colonialism in the Americas. Santa Fe, N.M: School for Advanced Research Press, 2011.

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Hidden messages: Representation and resistance in Andean colonial drama. Lewisburg, PA: Bucknell University Press, 1999.

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Stolen continents: Five hundered years of conquest and resistance in the Americas. Boston: Houghton Mifflin, 2005.

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Stenborg, Per. Holding back history: Issues of resistance and transformation in a post-contact setting, Tucumán, Argentina c. A.D. 1536-1660. a Göteborg: Göteborg University, Dept. of Archaeology, 2002.

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Capitoli di libri sul tema "Contact resistance"

Wiśniewski, Tomasz S., e Piotr Furmański. "Thermal Contact Resistance". In Encyclopedia of Thermal Stresses, 4957–68. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-007-2739-7_901.

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Kittel, Peter. "Modeling Thermal Contact Resistance". In Cryocoolers 8, 755–64. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-9888-3_74.

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Li, Zhiqiang. "Contact Resistance of Ge Devices". In The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices, 41–55. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-49683-1_4.

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Numata, Koichi, Kazutomo Hoshino e Hidefusa Takahara. "Contact Resistance in BiPbSrCaCuO Superconducting Rods". In Advances in Superconductivity III, 827–30. Tokyo: Springer Japan, 1991. http://dx.doi.org/10.1007/978-4-431-68141-0_185.

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Schröder, D., T. Ostermann e O. Kalz. "Nonlinear Contact Resistance and Inhomogeneous Current Distribution at Ohmic Contacts". In Simulation of Semiconductor Devices and Processes, 445–48. Vienna: Springer Vienna, 1993. http://dx.doi.org/10.1007/978-3-7091-6657-4_110.

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Maglia, Graciela. "Chapter 4. Cultural Text, Aesthetic Resistance, and Oral Literature in San Basilio de Palenque (Colombia)". In Contact Language Library, 147–82. Amsterdam: John Benjamins Publishing Company, 2017. http://dx.doi.org/10.1075/coll.54.04mag.

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Zar, J. L. "Electrical Switch Contact Resistance at 4.2°K". In Advances in Cryogenic Engineering, 95–101. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-0516-4_11.

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Ohtsuka, Shinya, Hidekazu Ohtsubo, Takashi Nakamura, Junya Suehiro e Masanori Hara. "Characteristics of Contact Resistance Between NbTi Electrodes". In Advances in Superconductivity IX, 1441–44. Tokyo: Springer Japan, 1997. http://dx.doi.org/10.1007/978-4-431-68473-2_184.

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McMullin, P. G., J. A. Spitznagel, J. R. Szedon e J. A. Costello. "Contact Resistance of High-Temperature SiC Metallization". In Springer Proceedings in Physics, 275–81. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84402-7_41.

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Geib, K. M., J. E. Mahan e C. W. Wilmsen. "W/SiC Contact Resistance at Elevated Temperatures". In Springer Proceedings in Physics, 224–28. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-75048-9_44.

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Atti di convegni sul tema "Contact resistance"

Muzychka, Y., M. Sridhar, M. Yovanovich e V. Antonetti. "Thermal constriction resistance in multilayered contacts - Applications in thermal contact resistance". In Guidance, Navigation, and Control Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1996. http://dx.doi.org/10.2514/6.1996-3967.

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Tamai, Terutaka, Yasushi Saitoh, Shigeru Sawada e Yasuhiro Hattori. "Peculiarities Characteristics Between Contact Trace and Contact Resistance of Tin Plated Contacts". In 2008 IEEE Holm Conference on Electrical Contacts (Holm 2008). IEEE, 2008. http://dx.doi.org/10.1109/holm.2008.ecp.65.

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Caven, R. W., e J. Jalali. "Predicting the contact resistance distribution of electrical contacts by modeling the contact interface". In Electrical Contacts - 1991 Proceedings of the Thirty-Seventh IEEE HOLM Conference on Electrical Contacts. IEEE, 1991. http://dx.doi.org/10.1109/holm.1991.170807.

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Constable, J. H. "Analysis of ACF Contact Resistance". In ASME 2003 International Electronic Packaging Technical Conference and Exhibition. ASMEDC, 2003. http://dx.doi.org/10.1115/ipack2003-35061.

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An analysis of the electrical resistance of an anisotropic conducting film (ACF) bond is presented. The electrical circuit for the bond resistance is divided into its different geometric regions for analysis. While the analysis of the resistance resulting from the bond pads is more complex than other regions because of the multiple random contact points, it is argued that the formula developed by Greenwood gives an adequate estimate of this contribution. A comparison is made of this estimate with evaluations in the literature, and the importance of the disagreement between methods is discussed. The magnitude of the contact resistance between the contact pad and particle (including film and constriction resistance), and the resistance of the deformed particle, are still contentious issues, and evidence is presented addressing this issue. In all previous reported results, excluding the author’s, the implicit assumption is that the apparent physical area of contact between the deformed particle and the bond pad is equal to the real area of electrical contact. This work reinforces the author’s contention that the electrical contact area is only a small fraction of the mechanical contact area, just as it is in separable contacts. A calculation is presented that evaluates the effect of electrically heating the ACF bond in order to separate the contact resistance from the remaining bulk resistance of the interconnect. In this technique, the small metal asperities (a-spots) on the surface of the apparent contact region are preferentially electrically heated due to their much higher current density, which in turn changes the resistance of the a-spot. Previous calculations of this effect have been carried out only for conductors that obey the Wiedemann-Franz law, and calculations in this work have extended the results to materials used in ACF bonds that depart significantly from the Wiedemann-Franz law. Further, it is argued that the observed larger than expected contact resistance in ACA bonds is likely due to a high resistivity temperature independent film resistance.

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Chiamori, H., Xiaoming Wu, Xishan Guo, Bao Quoc Ta e Liwei Lin. "Annealing nano-to-micro contacts for improved contact resistance". In 2010 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS 2010). IEEE, 2010. http://dx.doi.org/10.1109/nems.2010.5592493.

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Gahoi, A., S. Kataria e M. C. Lemme. "Temperature dependence of contact resistance for gold-graphene contacts". In ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC). IEEE, 2017. http://dx.doi.org/10.1109/essderc.2017.8066604.

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Chang, Edward Yi, e Yen-Ku Lin. "Ohmic Contacts with low contact resistance for GaN HEMTs". In 2019 19th International Workshop on Junction Technology (IWJT). IEEE, 2019. http://dx.doi.org/10.23919/iwjt.2019.8802617.

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Deac, Cosmin Nistor, Maricel Adam, Mihai Andrusca e Alin Dragomir. "Aspects Regarding Contact Resistance Measurement". In 2019 8th International Conference on Modern Power Systems (MPS). IEEE, 2019. http://dx.doi.org/10.1109/mps.2019.8759784.

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Zhang, Peng, Y. Y. Lau, W. Tang, M. R. Gomez, D. M. French, J. C. Zier e R. M. Gilgenbach. "Contact Resistance with Dissimilar Materials: Bulk Contacts and Thin Film Contacts". In 2011 IEEE 57th Holm Conference on Electrical Contacts (Holm 2011). IEEE, 2011. http://dx.doi.org/10.1109/holm.2011.6034777.

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Park, Chang J., e Deborah A. Kaminski. "Contact Area and Thermal Contact Resistance in an Ideal Bolted Joint: Part 2 — Study of Thermal Contact Resistance". In ASME 1997 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1997. http://dx.doi.org/10.1115/imece1997-1219.

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Abstract The thermal contact resistance at the interface of a bolted joint was investigated analytically, experimentally and numerically. Consideration was restricted to an ideal two-plate model for which the interface was perfectly flat. The two bolted plates made circular contact under uniform axisymmetric normal loading. The effect of important system parameters such as plate thickness, material property and loading radius were investigated. In the analytical study, a closed form solution for the thermal contact resistance for a bolted joint was derived. A three-dimensional heat conduction equation was applied to a model which had a circular geometry and isoflux boundary conditions. The model was solved by the method of separation of variables and superposition. The results showed that an isoflux condition at the interface was valid when thermal conductivities and thicknesses of the top and bottom plates were equal or close to each other. In the experimental study, the temperature drops were measured across a bolted piece with an interface and these were compared with drops across one solid piece without the interface at low air pressure. Only copper was used and all the copper plates had mirror-like surface finishes. The values of thermal contact resistance obtained from the experiment were consistently lower than those from the numerical analysis, due to air pressure in the vacuum chamber. In the numerical study, isothermal and isoflux boundary conditions were used. The results of this investigation would be useful in the design of cooling for high power electronic devices bolted on heat sinks.

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Rapporti di organizzazioni sul tema "Contact resistance"

Dhuley, R. C. Thermal contact resistance. Office of Scientific and Technical Information (OSTI), luglio 2019. http://dx.doi.org/10.2172/1556950.

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Khounsary, A. M., D. Chojnowski, L. Assoufid e W. M. Worek. Thermal contact resistance across a copper-silicon interface. Office of Scientific and Technical Information (OSTI), ottobre 1997. http://dx.doi.org/10.2172/554855.

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Smith, A. C. Experimental investigation of contact resistance across pressed lead and aluminum. Office of Scientific and Technical Information (OSTI), marzo 2000. http://dx.doi.org/10.2172/752684.

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Sakoda, Daniel, Ronald Phelps e Bryce Donovan. Report of NPSAT1 Battery Thermal Contact Resistance Testing, Modeling and Simulation. Fort Belvoir, VA: Defense Technical Information Center, ottobre 2012. http://dx.doi.org/10.21236/ada566672.

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Cousineau, J. Emily, Kevin Bennion, Doug DeVoto, Mark Mihalic e Sreekant Narumanchi. Characterization of Contact and Bulk Thermal Resistance of Laminations for Electric Machines. Office of Scientific and Technical Information (OSTI), giugno 2015. http://dx.doi.org/10.2172/1215166.

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Phelan, P. E., R. C. Niemann e T. H. Nicol. Thermal contact resistance for a CU/G-10CR interface in a cylindrical geometry. Office of Scientific and Technical Information (OSTI), luglio 1996. http://dx.doi.org/10.2172/285441.

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Finch, J. L. Procedure for contact electrical resistance measurements as developed for use at Sandia National Laboratories. Office of Scientific and Technical Information (OSTI), giugno 1994. http://dx.doi.org/10.2172/10163747.

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Sabau, Adrian. Review of Thermal Contact Resistance of Flexible Graphite Materials for Thermal Interfaces in High Heat Flux Applications. Office of Scientific and Technical Information (OSTI), ottobre 2022. http://dx.doi.org/10.2172/1896991.

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S.A. Attanasio, D.S. Morton, M.A. Ando, N.F. Panayotou e C.D. Thompson. Measurement of the Nickel/Nickel Oxide Phase Transition in High Temperature Hydrogenated Water Using the Contact Electric Resistance (CER) Technique. Office of Scientific and Technical Information (OSTI), maggio 2001. http://dx.doi.org/10.2172/821680.

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Arroyo, Marcos, Riccardo Rorato, Marco Previtali e Matteo Ciantia. 2D Image-based calibration of rolling resistance in 3D discrete element models of sand. University of Dundee, dicembre 2021. http://dx.doi.org/10.20933/100001229.

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Contact rolling resistance is the most widely used method to incorporate particle shape effects in the discrete element method (DEM). The main reason for this is that such approach allows for using spherical particles hence offering substantial computational benefits compared to non-spherical DEM models. This paper shows how rolling resistance parameters for 3D DEM models can be easily calibrated with 2D sand grain images.

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