Tesi sul tema "Conductive oxide"
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1
Boltz, Janika [Verfasser]. "Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides / Janika Boltz". Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2012. http://d-nb.info/1019850485/34.
2
Yavas, Hakan. "Development Of Indium Tin Oxide (ito) Nanoparticle Incorporated Transparent Conductive Oxide Thin Films". Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614475/index.pdf.
Abstract (sommario):
Indium tin oxide (ITO) thin films have been used as transparent electrodes in many technological applications such as display panels, solar cells, touch screens and electrochromic devices. Commercial grade ITO thin films are usually deposited by sputtering. Solution-based coating methods, such as sol-gel however, can be simple and economic alternative method for obtaining oxide films and also ITO. In this thesis, &ldquoITO sols&rdquo
and &ldquo
ITO nanoparticle-incorporated hybrid ITO coating sols&rdquo
were prepared using indium chloride (InCl3
3
Dinh, Minh A. "Hydrogen in transition metal doped transparent conductive oxide SnO₂". Thesis, Massachusetts Institute of Technology, 2020. https://hdl.handle.net/1721.1/127301.
Abstract (sommario):
Thesis: S.M., Massachusetts Institute of Technology, Department of Nuclear Science and Engineering, May, 2020Cataloged from the official PDF of thesis.
Includes bibliographical references (pages 83-85).
First-principles, thermodynamic, and kinetic Monte Carlo methods are used to study the behavior of hydrogen defects in doped-tin oxides. The calculated results indicate that Mo-, W-, Nb-, F-doped SnO2 are the best doped-tin oxides at reducing hydrogen solubility in their matrices. We expect these oxides also to be the best for removing hydrogen via proton reduction and hydrogen evolution from their surfaces due to the relatively high electron concentration they can have. Especially, W-doped is also found to perform best as a hydrogen blocker at all temperature range due to its ability to block hydrogen diffusion in the form of substitutional defect at low-temperature regime around 600K, and its nature to increase tin cation vacancies blocking hydrogen diffusion at high-temperature regime around 1200K. The computational approach developed here can accelerate the design of insulating materials where hydrogen reactions and proton transport are important.
by Minh Anh Dinh.
S.M.
S.M. Massachusetts Institute of Technology, Department of Nuclear Science and Engineering
4
DIANETTI, MARTINA. "Transparent Conductive Oxide-free hybrid and organic solar cells". Doctoral thesis, Università degli Studi di Roma "Tor Vergata", 2014. http://hdl.handle.net/2108/202335.
Abstract (sommario):
In organic Bulk Hetero Junction (BHJ) and hybrid/perovskite solar cells, the most employed material used as transparent electrode for the charges collection is transparent conductive oxide (TCO) such as indium doped tin oxide (ITO) or fluorine doped tin oxide (FTO). Beside the high transparency and conductivity (80% on glass substrates and 15 Ω/□, respectively) of ITO and FTO, there are many critical issues: i) limited indium sources, ii) high cost due to the deposition techniques (sputtering, evaporation, pulsed laser deposition and electroplating etc.), iii) high temperature processing and iv) high mechanical brittleness. For these reasons, it is necessary to investigate new materials.
The discovery of graphene, in 2004, that led Novoselov and Geim to win the Nobel Prize has opened up new areas of scientific research. In particular, its surprising physical, optical, mechanical and electrical properties have made the graphene one of the most promising material in the modern electronic applications and in particular in the 3rd generation solar cells technology that can be produced cheaply and very fast from solution with printing processes both on plastic and rigid substrates.
This work is mainly focused on the use of graphene as a replacement of the conventional transparent conductive oxides. In particular, most of the problems (wettability, annealing temperature etc.) for fabricate solar cells on graphene electrodes were solved. A simple way to decrease the sheet resistance of graphene electrode, by the addition of a metal grid, is presented as well. With the aim to realize high efficiency solar cells, both BHJ with low band gap polymers as active layer and perovskite-based solar cells have been investigated. Firstly, the effects of two different materials (Ni and MoO3), used as p-dopant on bare graphene, were studied and the thickness was optimized in order to reduce the graphene sheet resistance and increase the solar cells performances. Moreover, was investigated the feasibility to realize graphene-based solar cells starting to optimize the deposition of the organic active layer material (blend of P3HT: PC [60] BM or PTB7: PC [70] BM) in terms of annealing temperature and thickness.
iv
Furthermore, in order to increase the solar cells efficiency, organic-inorganic perovskite ( CH3NH3PbI3-xClx ) material was studied as active layer. As first step, the growth of perovskite active layer was optimized in terms of annealing temperature, photoluminescence and morphology both for direct and inverted architectures. Then, using a planar direct structure, efforts were made to solve the issues related to the realization of perovskite solar cells on graphene electrode. While, in the direct structure, Titania ordered photonics nanostructures were introduced as electron transporting layer (ETL) to increase the light absorbed by the perovskite active layer and the photo-generated current in the solar cells.
With the view to replace the conventional transparent conductive electrode, conductive polymers were also investigated. The most promising organic material is PEDOT: PSS, which is a semitransparent and conductive polymer. However, the pristine PEDOT: PSS film, deposited from aqueous solution, has a lower conductivity than the conventional transparent conductive oxide. For this reason, many strategies have been employed to improve the conductivity of this material to obtain a low cost, low temperature and TCO-free perovskite planar heterojunction solar cells on flexible substrate. In particular, it is demonstrated that the highly conductive polymeric material shows potential as a practical replacement for expensive and brittle ITO/PET. Moreover, in the bending test, the ITO-free perovskite solar cells with PEDOT anodes on flexible substrate manifested superior mechanical robustness compared with ITO-based cells, showing the high flexibility of perovskite layer.
5
Song, Dengyuan Centre for Photovoltaic Engineering UNSW. "Zinc oxide TCOs (Transparent Conductive Oxides) and polycrystalline silicon thin-films for photovoltaic applications". Awarded by:University of New South Wales. Centre for Photovoltaic Engineering, 2005. http://handle.unsw.edu.au/1959.4/29371.
Abstract (sommario):
Transparent conductive oxides (TCOs) and polycrystalline silicon (poly-Si) thin-films are very promising for application in photovoltaics. It is extremely challenging to develop cheap TCOs and poly-Si films to make photovoltaic devices. The aim of this thesis is to study sputtered aluminum-doped ZnO TCO and poly-Si films by solid-phase crystallization (SPC) for application in low-cost photovoltaics. The investigated aspects have been (i) to develop and characterize sputtered aluminum-doped ZnO (ZnO:Al) films that can be used as a TCO material on crystalline silicon solar cells, (ii) to explore the potential of the developed ZnO:Al films for application in ZnO:Al/c-Si heterojunction solar cells, (iii) to make and characterize poly-Si thin-films on different kinds of glass substrates by SPC using electron-beam evaporated amorphous silicon (a-Si) [referred to as EVA poly-Si material (SPC of evaporated a-Si)], and (iv) to fabricate EVA poly-Si thin-film solar cells on glass and improve the energy conversion efficiency of these cells by post-crystallization treatments. The ZnO:Al work in this thesis is focused on the correlation between film characteristics and deposition parameters, such as rf sputter power (Prf), working gas pressure (Pw), and substrate temperature (Tsub), to get a clear picture of film properties in the optimized conditions for application in photovoltaic devices. Especially the laterally non-uniform film properties resulting from the laterally inhomogeneous erosion of the target material are investigated in detail. The influence of Prf, Pw and Tsub on the structural, electrical, optical and surface morphology properties of ZnO:Al films is discussed. It is found that the lateral variations of the parameters of ZnO:Al films prepared by rf magnetron sputtering can be reduced to acceptable levels by optimising the deposition parameters. ZnO:Al/c-Si heterojunction solar cells are fabricated and characterized to demonstrate the feasibility of the fabricated ZnO:Al films for application in heterojunction solar cells. In this application, expensive indium-tin oxide (ITO) is usually used. Under the standard AM1.5G spectrum (100 mW/cm2, 25 ??C), the best fabricated cell shows an open-circuit voltage of 411 mV, a short-circuit current density of 30.0 mA/cm2, a fill factor of 66.7 %, and a conversion efficiency of 8.2 %. This is believed to be the highest stable efficiency ever reported for this type of cell. By means of dark forward current density-voltage-temperature (J-V-T) measurements, it is shown that the dominant current transport mechanism in the ZnO:Al/c-Si solar cells, in the intermediate forward bias voltage region, is trap-assisted multistep tunneling. EVA poly-Si thin-films are prepared on four types of glass substrates (planar and textured glass, both either bare or SiN-coated) based on evaporated Si, which is a cheaper Si deposition method than the existing technologies. The textured glass is realized by the UNSW-developed AIT process (AIT = aluminium-induced texture). The investigation is concentrated on finding optimized process parameters and evaluating film crystallization quality. It is found that EVA poly-Si films have a grain size in the range 0.8-1.5 ??m, and a preferential (111) orientation. UV reflectance and Raman spectroscopy measurements reveal a high crystalline material quality, both at the air-side surface and in the bulk. EVA cells are fabricated in both substrate and superstrate configuration. Special attention is paid to improving the Voc of the solar cells. For this purpose, after the SPC process, the samples receive the two post-crystallization treatments: (i) a rapid thermal anneal (RTA), and (ii) a plasma hydrogenation. It is found that two post-crystallization treatments more than double the 1-Sun Voc of the substrate-type cells. It is demonstrated that RTA improves the structural material quality of the cells. Furthermore, a hydrogenation step is shown to significantly improve the electronic material quality of the cells. Based on the RTA???d and hydrogenated EVA poly-Si material, the first mesa-type EVA cells are fabricated in substrate configuration, by using sputtered Al-doped ZnO as the transparent front contact. The investigation is focused on addressing the correlation between the type of the substrate and cell performance. Optical, electrical and photovoltaic properties of the devices are characterized. It is found that the performance of EVA cells depends on the glass substrate topography. For cells on textured glass, the AIT texture is shown to have a beneficial effect on the optical absorption of EVA films. It is demonstrated that a SiN barrier layer on the AIT-textured glass improves significantly both the crystalline quality of the poly-Si films and the energy conversion efficiency of the resulting solar cells. For cells on planar glass, a SiN film between the planar glass and the poly-Si film has no obvious effect on the cell properties. The investigations in this thesis clearly show that EVA poly-Si films are very promising for poly-Si thin-film solar cells on glass.
6
Sechogela, Thulaganyo P. "Vanadium dioxide nanocomposite thin film embedded in zinc oxide matrix as tunable transparent conductive oxide". Thesis, University of the Western Cape, 2013. http://hdl.handle.net/11394/4529.
Abstract (sommario):
Philosophiae Doctor - PhDThis project is aimed at fabricating a smart material. Zinc oxide and vanadium dioxide have received a great deal of attention in recent years because they are used in various applications. ZnO semiconductor in particular has a potential application in optoelectronic devices such as light emitting diodes (LED), sensors and in photovoltaic cell industry as a transparent electrode. VO2 also has found application in smart windows, solar technology and infrared smart devices. Hence the need to synthesis or fabricate a new smart material using VO2 and an active ZnO based nano-composites family in which ZnO matrix will be hosting thermally active VO2 nano-crystals is the basis of this study. Since VO2 behave as an MIT Mott’s type oxides and exhibits a thermally driven semiconductor-metal phase transition at about 68 oC and as a direct result ZnO:VO2 nano-composites would exhibit a reversible and modulated optical transmission in the infra-red (IR) while maintaining a constant optical transmission in the UV-Vis range. The synthesis is possible by pulsed laser deposition and ion implantation. Synthesis by pulsed laser deposition will involve thin films multilayer fabrication. ZnO buffer layer thin film will be deposited on the glass and ZnO single crystals and subsequent layer of VO2 and ZnO will be deposited on the substrate. X-ray diffraction (XRD) reveals that the series of ZnO thin films deposited by Pulsed Laser Deposition (PLD) on glass substrates has the hexagonal wurtzite structure with a c-axis preferential orientation. In addition the XRD results registered for VO2 samples indicate that all thin films exhibits a monoclinic VO2 (M) phase. UV-Vis NIR measurements of multilayered structures showed the optical tunability at the near-IR region and an enhanced transparency (>30 %) at the visible range.
7
Riedel, Christoph Alexander. "Transparent conductive oxide based hybrid nanostructures for electro-optical modulation". Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/420940/.
Abstract (sommario):
In the last decades, plasmonic resonant nanoantennas have created interest in a wide range of research fields that deal with light confinement on the nanoscale. One promising new research branch involves electrically switchable optical properties, which are scaled down to sub-μm size using plasmonic structures. In this thesis, samples with antenna structures whose resonances can be electrically modulated were designed, fabricated and characterised both electrically and optically. A comprehensive analytical study on the interaction of carrier modulation and optical antennas showed that shifts of the resonance wavelength depend on the antenna aspect ratio and material, and are enhanced if the surrounding medium’s permittivity is near zero. The simulation capabilities of the properties of transparent conductive oxides were successfully utilised to design an ultrathin optical solar reflector that selectively radiates visible and nearinfrared light while strongly absorbing mid-infrared light. The measured solar absorptance was 0.12 and the IR emissivity 0.79. Such selective reflectors can replace currently-used metallised quartz tiles to reduce launch costs of spacecraft. Combining electrical and optical simulation models with nanoscale resolution, a novel modulator structure was designed. By directly electrically addressing nanoantennas, a modulator was enabled to perform in transmission additionally to reflection. Reducing the ITO volume to a gap-filling removed negative impacts of the ITO background, so that the resulting modulator could freely shift the resonance of the antenna. The final structure showed a greatly enhanced amplitude modulation of 45% and a resonance shift of 38nm at 1550nm with an applied electric field of 1Vnm−1. Fabricated structures showed that the placing of an ITO gap-loading can be achieved by taking into account height alignment errors of current e-beam systems. Experiments on a planar electrical modulator with a TiN-HfO2-ITO stack showed first electro-optical modulation results, which can benefit from the design developed with the simulation model. The promising results obtained in this thesis open a new pathway for electro-plasmonic modulation in a variety of structures such as tunable reflectors and transmitters in free space or on silicon waveguides.
8
Alquraini, Zahra. "Highly Conductive Solid Polymer Electrolytes: Poly(ethylene oxide)/LITFSI Blends". DigitalCommons@Robert W. Woodruff Library, Atlanta University Center, 2018. http://digitalcommons.auctr.edu/cauetds/145.
Abstract (sommario):
In this study, highly ionic conductive solid polymer electrolytes have been prepared by blending high molecular weight polyethylene oxide (PEO: MW 35,000 and 100,000) and bis(trifluoromethane)sulfonamide lithium (LiTFSI) salt. The ionic conductivities were determined for several compositions of the blends at different temperatures. A maximum ionic conductivity of 9.45 x 10-6 S cm-1 at 25 °C has been obtained for the blends containing PEO-35,000/LiTFSI at an ethylene oxide to lithium salt ratio (EO/Li+) of 5, whereas a maximum ionic conductivity 7.7 x 10-6 S cm-1 at 25 °C was observed for the PEO-100,000/LiTFSI blend at EO/Li+ mole ratio of 5. For all the blends, increasing the temperature resulted in enhanced ionic conductivity. Furthermore, addition of tris(pentafluorophenyl)borane (TPFB) increased the conductivities at 25 oC. The overall conclusion of the study is that using LiTFSI and the TPFB in the blends results in ionic conductivities suitable for use in Li-air and/or Li-ion batteries.
9
Huang, Long. "Copper Electrodeposition on Iridium, Ruthenium and Its Conductive Oxide Substrate". Thesis, University of North Texas, 2003. https://digital.library.unt.edu/ark:/67531/metadc4416/.
Abstract (sommario):
The aim of this thesis was to investigate the physical and electrochemical properties of sub monolayer and monolayer of copper deposition on the polycrystalline iridium, ruthenium and its conductive oxide. The electrochemical methods cyclic voltammetry (CV) and chronocoulometry were used to study the under potential deposition. The electrochemical methods to oxidize the ruthenium metal are presented, and the electrochemical properties of the oxide ruthenium are studied.
The full range of CV is presented in this thesis, and the distances between the stripping bulk peak and stripping UPD peak in various concentration of CuSO4 on iridium, ruthenium and its conductive oxide are shown, which yields thermodynamic data on relative difference of bonding strength between Cu-Ru/Ir atoms and Cu-Cu atoms. The monolayer of UPD on ruthenium is about 0.5mL, and on oxidized ruthenium is around 0.9mL to 1.0mL. The conductive oxide ruthenium presents the similar properties of ruthenium metal. The pH effect of stripping bulk peak and stripping UPD peak of copper deposition on ruthenium and oxide ruthenium was investigated. The stripping UPD peak and stripping bulk peak disappeared after the pH ≥ 3 on oxidized ruthenium electrode, and a new peak appeared, which means the condition of pH is very important. The results show that the Cl- , SO42- , Br- will affect the position of stripping bulk peak and stripping UPD peak: the stripping bulk peak will shift and decrease if the concentration of halide ions is increasing, and the monolayer of UPD will increase at the same time.
10
Livingstone, Veronica Jean. "One-Pot In-Situ Synthesis of Conductive Polymer/Metal Oxide Composites". University of Toledo / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=toledo158860469194691.
11
Auckett, Josie Elise. "Structural and physical studies of oxide ionic-conductive brownmillerite single crystals". Thesis, The University of Sydney, 2015. http://hdl.handle.net/2123/13668.
Abstract (sommario):
Large single crystals of brownmillerites in the Sr2(Fe,Co,Al)2O5 and Ca2(Fe,Co,Al)2O5 compositional triangles were grown using the floating-zone (FZ) method. A commensurate modulation with Pbma symmetry was identified in Sr2FeCoO5 for the first time and confirmed in Sr2Fe2O5 and Ca2FeCoO5, while Ca2FeAlO5 and Ca2(Fe0.95Zn0.05)2O5 adopted different unmodulated structures at room temperature, in agreement with previous reports. The Pbma phases persisted to very high temperatures (≤750 °C) in all cases, indicating negligible thermal disordering of the chain orientations. Electron diffraction images of Sr2FeCoO5 also revealed that the dominant commensurate modulation vector determined by diffraction from large sample volumes differed from the incommensurate vectors identified in individual crystallites of a powdered sample (as found previously for Sr2Fe2O5), highlighting the insufficiency of powder diffraction alone as a reliable tool to distinguish between different brownmillerite structure variants. The magnetic behaviours of Sr2FeCoO5 and Ca2Fe2O5 were characterised by magnetometry and magnetic structure refinements against neutron diffraction data. Detailed structure refinements and physical property measurements of Ca2Fe2O5 showed that a proposed reorientation of the magnetic spins below 140 K does not occur and that its anomalous magnetic susceptibility is not caused by changes to the long-range ordered magnetic structure. Finally, inelastic neutron scattering (INS) data collected for single-crystalline Sr2Fe2O5 and Ca2Fe2O5 generally supported a proposed ionic conduction model in which the “apical” oxygen atoms between the BO4 tetrahedral and BO6 octahedral layers become delocalised at elevated temperatures. The results point to the possible improvement of brownmillerite ionic conductors by doping with larger cations to lengthen the b axis, which in turn should lengthen and weaken the critical B–O bonds.
12
Shih, Grace Hwei-Pyng. "Nanostructure and Optoelectronic Phenomena in Germanium-Transparent Conductive Oxide (Ge:TCO) Composites". Diss., The University of Arizona, 2012. http://hdl.handle.net/10150/228175.
Abstract (sommario):
Nanostructured composites are attracting intense interest for electronic and optoelectronic device applications, specifically as active elements in thin film photovoltaic (PV) device architectures. These systems implement fundamentally different concepts of enhancing energy conversion efficiencies compared to those seen in current commercial devices. This is possible through considerable flexibility in the manipulation of device-relevant properties through control of the interplay between the nanostructure and the optoelectronic response. In the present work, inorganic nanocomposites of semiconductor Ge embedded in transparent conductive indium tin oxide (ITO) as well as Ge in zinc oxide (ZnO) were produced by a single step RF-magnetron sputter deposition process.It is shown that, by controlling the design of the nanocomposites as well as heat treatment conditions, decreases in the physical dimensions of Ge nanophase size provided an effective tuning of the optical absorption and charge transport properties. This effect of changes in the optical properties of nanophase semiconductors with respect to size is known as the quantum confinement effect. Variation in the embedding matrix material between ITO and ZnO with corresponding characterization of optoelectronic properties exhibit notable differences in the presence and evolution of an interfacial oxide within these composites. Further studies of interfacial structures were performed using depth-profiling XPS and Raman spectroscopy, while study of the corresponding electronic effects were performed using room temperature and temperature-dependent Hall Effect. Optical absorption was noted to shift to higher onset energies upon heat treatment with a decrease in the observed Ge domain size, indicating quantum confinement effects within these systems. This contrasts to previous investigations that have involved the introduction of nanoscale Ge into insulating, amorphous oxides. Comparison of these different matrix chemistries highlights the overarching role of interfacial structures on quantum-size characteristics. The opportunity to tune the spectral response of these PV materials, via control of semiconductor phase assembly in the nanocomposite, directly impacts the potential for the use of these materials as sensitizing elements for enhanced solar cell conversion efficiency.
13
Balestrieri, Matteo. "Transparent conductive oxides with photon converting properties in view of photovoltaic applications : the cases of rare earth-doped zinc oxide and cerium oxide". Thesis, Strasbourg, 2014. http://www.theses.fr/2014STRAE019/document.
Abstract (sommario):
L’objectif de cette thèse était d’étudier les propriétés de conversion de photons des ions terres rares insérées dans des matrices d’oxydes transparents en vue d’application photovoltaïques. En particulier, le but était de fonctionnaliser des couches minces déjà utilisées dans les cellules solaires comme couches antireflet ou oxydes transparents conducteurs. Nous avons donc sélectionné deux matériaux (ZnO et CeO2) compatibles avec les cellules solaires au silicium.Ce travail a montré que les couches minces dopes aux terres rares peuvent être utilisées pour convertir les photons dans des applications photovoltaïques, mais qu’il n’est pas facile d’obtenir des rendements élevés.Cependant, nous avons obtenu des informations très importantes sur l’influence de la matrice sur les propriétés de conversion des terres rares et sur les mécanismes de transfert d’énergie entre la matrice et la terre rareThe objective of this thesis was to investigate the photon converting properties of rare earths (RE) ions embedded in transparent oxide hosts in view of potential application on silicon solar cells. In particular, the goal was to functionalize thin films that are already used in solar cells such as anti-Reflection coatings or transparent conductive oxides.Two host materials (ZnO and CeO2) have been selected, which are compatible with silicon solar cells.This work shows that RE-Doped transparent oxide films are a viable low-Cost solution for obtaining photon-Converting layers that can be applied on solar cells, but that achieving high efficiencies is much more difficult than it might appear in theory. Nevertheless, very valuable information has been obtained on the effect of the host material on the photon management properties and on the energy transfer mechanisms in these systems. In particular, the energy level diagram of some of the rare earth ions in the specific matrices has been reconstructed
14
Sun, Xinxin. "Conductive behaviour of carbon nanotube based composites". Thesis, Loughborough University, 2009. https://dspace.lboro.ac.uk/2134/6280.
Abstract (sommario):
This project was basically exploratory in the electrical properties of carbon nanotube (CNT) based materials. The direct current (DC) conductivity of CNT/polymer composites was computed by using equivalent circuit method and a three dimensional (3-D) numerical continuum model with the consideration of tunneling conduction. The effects of the potential barrier of polymer and the tortousity of CNTs on the conductivity were analyzed. It was found that both of percolation threshold and DC conductivity can be strongly affected by the potential barrier and the tortousity. The influence of contact resistance on DC conductivity was also computed, and the results revealed that contact resistance and tunneling resistance had significant influences on the conductivity, but did not affect the percolation threshold. The microstructure-dependent alternating current (AC) properties of CNT/polymer composites were investigated using the 3-D numerical continuum model. It was found that AC conductivity and critical frequency of CNT/polymer composites can be enhanced by increasing the curl ratio of CNTs. In the mid-range CNT mass fraction, with increasing curl ratio of CNTs, AC conductivity, interestingly, became frequency-dependent in low frequency range, which cannot be explained by reference to the percolation theory. A proper interpretation was given based on the linear circuit theory. It was also found that the critical frequency can also be affected by the size of CNT cluster. Series numerical formulas were derived by using a numerical capacitively and resistively junction model. In particular, this work introduced an equivalent resistor-capacitor (RC) circuit with simple definitions of the values of contact resistance and average mutual capacitance for CNT/polymer nanocomposites. Theoretical results were in good agreement with experimental data, and successfully predicted the effect of morphology on the AC properties of CNT/polymer composites. DC and AC conductivities of multi-walled carbon nanotube (MWCNT)/graphene oxide (GO) hybrid films were measured for selected MWCNT mass fractions of 10%, 33.3%, 50%, 66.7%, and 83.3% using four-probe method. The experimental results were fitted using scaling law, and relatively high percolation threshold was found. This high percolation threshold was understood in terms of the potential energy and intrinsic ripples and warping in the freestanding graphene sheets. The capacitance of these hybrid films were measured using the voltmeter-ammeter-wattmeter test circuit with different voltages and heat treatments. The MWCNT/GO film showed relatively high specific capacitance (0.192F/cm3 for the mass fraction of 83.3%) and power factor compared to conventional dielectric capacitors. Both of measured capacitance and power factor can be enhanced by increasing testing voltages. The capacitance of MWCNT/GO films rapidly decreased after heat treatments above 160 ℃. This decrease was caused by redox reaction in the GO sheets. The capacitive behaviour of MWCNT/GO hybrid films was also interpreted by using the equivalent circuit model. Single-walled carbon nanotube (SWCNT) and SWCNT/Poly(vinyl alcohol) (PVA) films were used to form a piezoresistive strain sensor. Both of static and dynamic strain sensing behaviours of SWCNT and SWCNT/PVA films were measured. It was found that the sensitivities of these films decreased with increasing their thicknesses. The SWCNT film with a thickness of 1900 nm and SWCNT/PVA film exhibited viscoelastic sensing behaviour, because van der Waals attraction force allowed axial slippages of the smooth surface of nanotubes. A numerical model was derived based on the dynamic strain sensing behaviour. This model could be useful for designing CNT strain sensors. Finally, thermoelectric power (TEP) of deformed SWCNT films with various thicknesses was measured. It was observed that positive TEP of SWCNT films increased with increasing stain above the critical point. The experimental results were fitted by using a numerical model in terms of a variation of Nordheim-Gorter relation and fluctuation induced tunneling (FIT) model. From the numerical model, it was found that the increase of TEP above the critical strain resulted from the positive term of the contribution from the barrier region, and the effect of barrier regions decreases with increasing the thickness of the film.
15
Arbuzov, A. A., V. E. Muradyan, B. P. Tarasov e E. A. Sokolov. "Preparation of Amino-Functionalized Graphene Sheets and their Conductive Properties". Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35639.
Abstract (sommario):
Amino-functionalized graphene sheets were prepared through chemical reduction by hydrazine hy-drate, amination or amidation of graphite oxide. For amination of graphite oxide were used polyamine such as ethylenediamine, diethylenetriamine and triethylenetetramine. Addition of amine groups to graphene is identified by Fourier transform infrared spectroscopy, Raman spectroscopy, elemental analysis and ther-mogravimetry. Scanning electron microscopy data indicate that the organic amine is not only as nitrogen sources to obtain the nitrogen-doped graphene but also as an important modification to control the assem-bly of graphene sheets in the 3D structures. The electrical conductivity of the materials obtained by amina-tion and amidation of graphene is much smaller than that of reduced graphite oxide.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35639
16
Tsai, Chih-Long. "Ceramic processing and electrochemical analysis of proton conductive solid oxide fuel cell". Thesis, Montana State University, 2010. http://etd.lib.montana.edu/etd/2010/tsai/TsaiC0510.pdf.
Abstract (sommario):
Ba(Zr 0.8-xCe xY 0.2)O ₃-delta (0 < or = x < or = 0.4) (BZCYs) powders were successfully fabricated by both solid state reaction and glycine-nitrate process. Lithium fluoride (LiF) was selected as a liquid phase sintering additive to lower the sintering temperature of BZCYs. Using LiF as an additive, high density BZCYs ceramics can be obtained at sintering temperatures 200~300 °C lower than the usual 1700 °C with much shorter soaking time. Nuclear reaction investigations showed no lithium and a small amount of fluorine reside in the sample which indicates the non-concomitant evaporation of lithium and fluorine during the sintering process. Scanning electron microscopic investigations showed the bimodal structure of BZCY ceramics and grain growth as Ce content increases. In a water saturated hydrogen containing atmosphere, BZCY ceramics have higher conductivity when LiF is used in the sintering process. LiF-added BZCY electrolyte-supported fuel cells with different cathodes were tested at temperatures from 500 ~ 850 °C. Results show that Pt cathode gives much higher power output than ceramic cathodes, indicating much larger polarization from ceramic cathodes than Pt. Ba(Zr 0.6Ce 0.2Y 0.2)O ₃-delta anode supported proton conductive solid oxide fuel cells (H-SOFCs) show low power output due to its low proton conductivity. Ba(Ce 0.8Y 0.2)O ₃-delta anode supported H-SOFCs show excellent power output. Different H ₂ and O ₂ partial pressures were used for fuel and oxidative gas, respectively, to obtain information for V(i) modeling. Different thicknesses of supporting anode were used to obtain saturation current densities of H-SOFC. Using the dusty-gas model which includes Stefan-Maxwell equation and Knudsen terms, the calculation gave tortuosity of our supporting anode 1.95 + or = 0.1. The gas concentrations across the anode were also calculated by knowing the tortuosity of the supporting anode. An electrochemical model of H-SOFC was developed. The excellent agreement between model and experimental data implies that our model is close to the true physical picture of H-SOFC. The more accurate prediction of our model, based on a physical picture of electrochemical processes, also provides a replacement for using the Butler-Volmer equation in SOFC modeling. In the parametric analysis, our model shows that ohmic polarization and cathodic polarization limit the performance of H-SOFC. Research for improving H-SOFC performance should be focused on reducing electrolyte thickness, increasing proton conductivity of electrolyte and finding a compatible cathode material.
17
Pfeffer, Michael Ulrich [Verfasser], e Oliver [Akademischer Betreuer] Eibl. "Pseudo-γ aluminum oxide : A new transparent conductive oxide with outstanding structural properties / Michael Ulrich Pfeffer ; Betreuer: Oliver Eibl". Tübingen : Universitätsbibliothek Tübingen, 2020. http://d-nb.info/1203623097/34.
18
Book, Martin. "Magnetron sputtering of highly transparent p-conductive NiO thin films". Thesis, Uppsala universitet, Solcellsteknik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-423322.
Abstract (sommario):
P-type transparent conductors are needed for a wide range of applicationssuch as solar cells and electrochromic smart windows. Solar power is animportant form of energy in today’s society as the threat of global warmingpushes the world towards fossil free energy. Hence a lot of solar cell typeshave been developed, among them tandem cells which are to different typesof solar cells stacked on top of each other. If one of the cells is based ona perovskite, a transparent p-type thin film electrode is needed as a holeconductor and electron blocking layer between the two cells. Nickel oxide(NiO) is a good candidate for this application as it has desired propertiessuch as good hole conduction, a high band gap and a matching work functionto the perovskite. The transmittance of as deposited NiO films by reactivemagnetron sputtered is limited so post deposition annealing is used to increasethe transmittance. This is not possible in this solar cell application as parts ofthe solar cell stack is temperature sensitive.Electrochromic smart windows contain a layer that can change its opticalproperties with the application of a voltage. Such windows are used inbuildings to increase energy efficiency and they contain an electrochromicdevice where NiO is used as an electrode as it has electrochromic properties,but just like with the solar cells, the transmittance of NiO is limited. Thisstudy investigates whether it is possible to make as deposited NiO by reactivemagnetron sputtering transparent, eliminating the need for post depositionannealing. Such a deposition process was found using different sputtermachines with the process point on the edge between metal and oxide modein terms of oxygen flow. This resulted in highly transparent and highlyresistive NiO films with a much higher deposition rate than in oxide mode.
19
Zhu, Zhaozhao, e Zhaozhao Zhu. "Emerging Materials for Transparent Conductive Electrodes and Their Applications in Photovoltaics". Diss., The University of Arizona, 2017. http://hdl.handle.net/10150/623062.
Abstract (sommario):
Clean and affordable energy, especially solar energy, is becoming more and more important as our annual total energy consumption keeps rising. However, to make solar energy more affordable and accessible, the cost for fabrication, transportation and assembly of all components need to be reduced. As a crucial component for solar cells, transparent conductive electrode (TCE) can determine the cost and performance. A light weight, easy-to-fabricate and cost-effective new generation TCE is thus needed. While indium-doped tin oxide (ITO) has been the most widely used material for commercial applications as TCEs, its cost has gone up due to the limited global supply of indium. This is not only due to the scarcity of the element itself, but also the massive production of various opto-electronic devices such as TVs, smartphones and tablets. In order to reduce the cost for fabricating large area solar cells, substitute materials for ITO should be developed. These materials should have similar optical transmittance in the visible wavelength range, as well as similar electrical conductivity (sheet resistance) to ITO. This work starts with synthesizing ITO-replacing nano-materials, such as copper nanowires (CuNWs), derivative zinc oxide (ZnO) thin films, reduced graphene oxide (rGO) and so on. Further, we applied various deposition techniques, including spin-coating, spray-coating, Mayer-rod coating, filtration and transferring, to coat transparent substrates with these materials in order to fabricate TCEs. We characterize these materials and analyze their electrical/optical properties as TCEs. Additionally, these fabricated single-material-based TCEs were tested in various lab conditions, and their shortcomings (instability, rigidity, etc.) were highlighted. In order to address these issues, we hybridized the different materials to combine their strengths and compared the properties to single-material based TCEs. The multiple hybridized TCEs have comparable optical/electrical metrics to ITO. The doped-ZnO TCEs exhibit high optical transmittance over 90% in the visible range and low sheet resistance under 200Ω/sq. For CuNW-based composite electrodes, ~ 85% optical transmittance and ~ 25Ω/sq were observed. Meanwhile, the hybridization of materials adds additional features such as flexibility or resistance to corrosion. Finally, as a proof of concept, the CuNW-based composite TCEs were tested in dye-sensitized solar cells (DSSCs), showing similar performance to ITO based samples.
20
Frroku, Saimir <1988>. "Nanoscale electrical characterization by advanced conductive atomic force microscopy techniques of all oxide heterojunctions". Master's Degree Thesis, Università Ca' Foscari Venezia, 2021. http://hdl.handle.net/10579/19670.
Abstract (sommario):
This thesis investigates the nano - electrical properties of a metal oxide semiconductor for photovoltaic applications. Three p-Cu2O/n-TiO2 and one TiO2 (bare) samples were investigated during the thesis. The main difference between the three p-Cu2O/n-TiO2 nanowires samples is the thickness of the absorber layer, the cuprous oxide. Amplitude Modulation Kelvin Probe Force Microscopy (AM-KPFM) and Intermodulation Electrostatic Force microscopy (ImEFM) have been employed to map nanoscale surface potential of Cu2O/TiO2 and TiO2 (bare) under ambient condition and under nitrogen atmosphere. The four samples were tested in dark, light condition and the best results were obtained in the case of ALD208 where the thickness of the absorber layer it was the smallest among the set of the samples. The conductive atomic force microscopy it was employed to obtain the current distribution on the surface of the sample and the best result were obtained in the case of ALD208. The scanning electron microscopy showed a sample with a uniform topography where the average diameter of the nanowires was 84 nm in the case of TiO2 (bare) and 118 nm in the case of Cu2O/TiO2. The Micro Raman spectroscopy confirmed the presence of the dominant peaks of titania (as rutile) at 240, 430 and 630 cm-1 and the presence of cuprous oxide 218 and 148 cm-1. The results demonstrate that the use of p-Cu2O/n-TiO2 could make possible to construct a high performance solar cell, which could revolutionise the field of clean energy.
21
Winarski, David J. "Synthesis and Characterization of Transparent Conductive Zinc Oxide Thin Films by Sol-gel Spin Coating Method". Bowling Green State University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1434124579.
22
Hoyt-Lalli, Jennifer K. "Synthesis of Functionalized Polysiloxanes and Investigation of Highly Filled Thermally Conductive Microcomposites". Diss., Virginia Tech, 2002. http://hdl.handle.net/10919/30007.
Abstract (sommario):
The scope of this research entailed the synthesis of novel polyorganosiloxanes with pendent phosphine, phosphine oxide, nitrile and carboxylic acid moieties. Such polysiloxanes were prepared with controlled concentrations of both the polar moieties and hydrido or vinyl pendent crosslinkable sites to afford precursor materials for well-defined networks. The intention was to generate stable microcomposite dispersions with very high concentrations of polar thermally conductive fillers. Lightly crosslinked elastomeric networks with controlled amounts of polar moieties were prepared via a hydrosilation curing mechanism. High concentrations of thermally conductive micro-fillers were dispersed throughout the resins and the microcomposites were investigated as thermally conductive adhesives.
Random polysiloxane copolymers containing controlled number average molecular weights (Mns) and compositions with systematically varied concentrations of hydridomethylsiloxy- or vinylmethylsiloxy- units were prepared via ring-opening equilibrations of cyclosiloxane tetramers. These precursors were functionalized with precise concentrations of polar pendent moieties via hydrosilation (nitrile) or free radical addition reactions (phosphine and carboxylic acids). Valuable additions to the family of polysiloxanes were prepared by oxidizing the phosphine moieties to form phosphine oxide containing polysiloxanes. Defined concentrations of residual hydrido- or vinyl- reactive sites were crosslinked via hydrosilation to yield elastomeric adhesives.
Specific interactions between the nitrile and phosphine oxide substituted polysiloxanes and the acidic proton of chloroform were shown using 1H NMR. The magnitude of the shift for the deshielded chloroform proton increased with the degree of hydrogen bonding, and was larger for the phosphine oxide species.
The polar polysiloxane resins were filled with high concentrations of thermally conductive fillers including silica-coated AlN, Al spheres, BN and Ag flake, then hydrosilated to form microcomposite networks. Microcomposite adhesive strengths, thermal properties (glass transition temperature (Tg) and high temperature stability), and thermal conductivities were studied. An unfilled polysiloxane network containing only 15 mole percent phosphine oxide exhibited a dramatic improvement (46 N/m) in adhesive strength to Al adherends relative to a control polydimethylsiloxane network (2.5 N/m). Importantly, stable polysiloxane micro-dispersions were obtained with up to 67 volume percent (86 weight percent) silica-coated AlN. TEM data confirmed the dispersion homogeneity and XPS demonstrated that the particle surfaces were well-coated with the functionalized polysiloxanes. A microcomposite comprised of 67 volume percent silica-coated AlN and a polysiloxane containing only 9 molar percent nitrile groups had a thermal conductivity of 1.42 W/mK. The glass transition temperatures of the microcomposites were controlled by the amounts of polar functional moieties on the resins and the network crosslink densities. All of the microcomposites exhibited Tgs lower than -44°C and the materials remained stable in dynamic TGA measurements to approximately 400°C in both air and nitrogen.Ph. D.
23
Kingdom, Rachel Michele. "Conducting Polymer Matrix Poly(2,2’-Bithiophene) Mercuric Metal Ion Incorporation". Wright State University / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=wright1259889438.
24
Wang, Sung-Li, e 王菘豊. "Fabrication and Analysis of Indium Gallium Oxide Transparent Conductive Oxide". Thesis, 2004. http://ndltd.ncl.edu.tw/handle/57150595771755302479.
Abstract (sommario):
碩士國立臺灣大學
光電工程學研究所
92
There are two issues in this thesis. The first issue is the growth of indium gallium oxide thin film. We grow indium gallium oxide thin film successfully in two ways. One way is by photoelectrical chemical method (PEC method). The other way is by thermal evaporation. The second issue is the characteristics study of the indium gallium oxide thin film. After the growth of indium gallium oxide, we take some optical measurements such as transmission, reflection, and photoluminescence .Electrical measurements such as circle transmission line method (CTLM) and Hall measurement. Besides, SEM、EDX、XRD、XPS and surface profiler are also done on the samples in order to study the characteristics and quality of the oxide layer. Finally, we make a discussion on the characteristics and quality issue of indium gallium oxide film. Our indium gallium oxide film has 80% of transparency while photon energy below 3.54 eV. And the lowest resistivity(ρ) is 4x10-3Ω-cm .
25
Caldas, Mafalda Sofia Fonseca. "Stacks of alternating conductive and non-conductive oxides studied by ellipsometry". Master's thesis, 2018. http://hdl.handle.net/10362/58087.
Abstract (sommario):
High-quality video-rate holography is a logic evolution of display technology that requests an extraordinary technological effort. Due to this challenge, this has not been demonstrated yet. For this realization it is necessary to vary the refractive index within a waveguide with high precision, subwavelength spatial resolution and GHz frequency. Within this thesis, the development of a metamaterial for the cladding of such a holographic waveguide was the target. This material is supposed to consist of non-optically absorbing materials where an electrical conductor is laterally separated by an insulating material. In our chosen set of materials, we investigated Gallium Indium Zinc Oxide (IGZO), Indium-Tin-Oxide (ITO) and Indium Tin Zinc Oxide (ITZO) as transparent conductive oxides and Silicon Nitride (Si3N4) and Silicon Oxynitride (SiOxNy) as insulating oxide (IO).
IGZO, a transparent semiconductor oxide (TSO), appeared recently as new material for flexible and transparent thin film transistors. The good electrical conductivity together with high transparency in the visible region (> 80% optical transmittance) at room temperature makes this material a very attractive candidate. ITO is one of the most important transparent conductor oxides (TCOs) that exists. It is applied in different technologies due to its high electrical conductivity and high optical transparency. ITZO has been a promising replacement for ITO as the TCO layer in many opto-electronic applications. The insulator Si3N4 is widely used as a passivation layer, a barrier, or as a masking layer to prevent oxidation or diffusion in underlying materials in patterned areas, and as a final protection layer to finished devices because of its radiation resistance and hardness. Another candidate, SiOxNy, is a material that has been under investigation because it can be considered an intermediate between Si3N4 and SiO2 in terms of physical and chemical properties. Thus, is considered very good for electro-optics and organic light-emitting devices as its properties can be tuned by varying the ratio of the oxide and nitride content.
In this work, we start with describing the production techniques used. All the TSOs were deposited by Direct Current Sputtering, that is a high vacuum physical vapor deposition (PVD) technology. Inductively coupled plasma chemical vapor deposition (ICP-CVD) was the technique used for the deposition of IOs. With the help of ellipsometry it was also possible to determine the optical constants and the thickness of them. Thus, we began by analysing these parameters and, when necessary, altering them in order to approach the main requirements of this project. Finally, several comparative studies on optical properties were carried out to find applicable combinations between the two types of oxide. It was therefore concluded that IGZO is the preferred candidate in combination with SiN or SiON. because of their similar optical constants for certain wavelengths.
In addition, the reliability and sensitivity of ellipsometry were studied to see if this could be used in this application, or whether it was necessary to investigate another method capable of detecting the low optical extinction coefficients of the materials of interest.
26
Chien, Huang-pin, e 錢皇賓. "Wet Coating of Transparent Conductive Oxide (AZO) Film". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/41304913102342763093.
Abstract (sommario):
碩士國立中央大學
化學工程與材料工程研究所
96
Significant progress has been made in transparent conductive oxide (TCO) films, largely motivated by the emergence of LCD and solar cell industries. In the search for a cheaper and indium-free materials to replace the traditional ITO, aluminum-doped zinc oxide (AZO) has been the leading candidate. Therefore, the objective of this research is to identify experimentally the controlling factors that ultimately govern the transparency and electrical conductivity of AZO film. ZnO nanoparticles of size 5~6 nm have been successfully synthesized previously in our Lab by titrating zinc chloride with sodium hydroxide in ethylene glycol solution, followed by low temperature aging. However, such method has two serious drawbacks – the production of unwanted sodium chloride byproduct, and a low concentration (4 wt%). This would require multiple coatings and sintering needed to achieve the desired thickness. To achieve the desired AZO film thickness with a single coating, the concentration of ZnO solution must be about 50 wt%. At the same time the NaCl byproduct must be remove. Using PGME as a co-solvent to dissolve hexane in EG, ZnO nanoparticles were precipitaled while redisperse after evaporation of hexane. TGA analysis showed an increased in weight percent (64 wt%). After dilution with methanol to 30 wt%, the as-prepared film with one dip-coating cycle was sintered in air at 400oC. The resulting film showed a transparency of higher than 90% and a thickness of 300 nm as measured by SEM. Subsequent study involved the dopping of aluminum and sintering conditions on the electrical conductivity and transparency of AZO films. Variables sadas sintering atomsphere and temperature were also tested to study their respective impacts.
27
Chen, Bo-Chao, e 陳柏超. "Oxide-reduction Produced the Transparent Conductive Graphene Film". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/58769854968320690907.
Abstract (sommario):
碩士崑山科技大學
電子工程研究所
101
This study oxide-reduction produced the transparent conductive graphene film, a oxide-reduction method has the advantages of lower cost and technology,first graphite subjexcted tooxidation treatment,then produced graphene oxide with DI water were mixed, graphene oxide aqueous solution,the graphene oxide aqueous solution of aspin coating on a glass substrate,and in the environment of argon/hydrogen mixed gas reduction by heating to produce the transparent conductive graphene film. First, the X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive spectroscopy (EDS), Raman spectroscopy analysis of the morphology of the film, the lattice structure and its constituent content by XRD analysis that at 10. Places a strong peak produced can be proved that the graphene oxide, observed by SEM at a concentration of 1 mg / ml are found in significant film channel, and in the lower 0.1,0.5 mg / ml two group of the surface with a uniform particle size, particle composition by EDS analyzes are recognized as carbon, Raman analysis of ID / IG> 1, I2D/IG <1.3, the more defects of the multi-graphene structure, then the UV-VIS spectrometer after that, as the concentration increases, the transmittance decreases, while that by the four-point probe sheet resistance, as the concentration increases, the sheet resistance decreases, the best argument for the reduction temperature 300 ℃ concentration 0.1 mg / ml ( 3 layer )
28
"Metal-Oxide Based Transparent Conductive Oxides and Thin Film Transistors for Flexible Electronics". Doctoral diss., 2011. http://hdl.handle.net/2286/R.I.8850.
Abstract (sommario):
abstract: The object of this study is to investigate and improve the performance/stability of the flexible thin film transistors (TFTs) and to study the properties of metal oxide transparent conductive oxides for wide range of flexible electronic applications. Initially, a study has been done to improve the conductivity of ITO (indium tin oxide) films on PEN (polyethylene naphthalate) by inserting a thin layer of silver layer between two ITO layers. The multilayer with an optimum Ag mid-layer thickness, of 8 nm, exhibited excellent photopic average transmittance (~ 88 %), resistivity (~ 2.7 × 10-5 µ-cm.) and has the best Hackee figure of merit (41.0 × 10-3 Ω-1). The electrical conduction is dominated by two different scattering mechanisms depending on the thickness of the Ag mid-layer. Optical transmission is explained by scattering losses and absorption of light due to inter-band electronic transitions. A systematic study was carried out to improve the performance/stability of the TFTs on PEN. The performance and stability of a-Si:H and a-IZO (amorphous indium zinc oxide) TFTs were improved by performing a systematic low temperature (150 °C) anneals for extended times. For 96 hours annealed a-Si:H TFTs, the sub-threshold slope and off-current were reduced by a factor ~ 3 and by 2 orders of magnitude, respectively when compared to unannealed a-Si:H TFTs. For a-IZO TFTs, 48 hours of annealing is found to be the optimum time for the best performance and elevated temperature stability. These devices exhibit saturation mobility varying between 4.5-5.5 cm2/V-s, ION/IOFF ratio was 106 and a sub-threshold swing variation of 1-1.25 V/decade. An in-depth study on the mechanical and electromechanical stress response on the electrical properties of the a-IZO TFTs has also been investigated. Finally, the a-Si:H TFTs were exposed to gamma radiation to examine their radiation resistance. The interface trap density (Nit) values range from 5 to 6 × 1011 cm-2 for only electrical stress bias case. For "irradiation only" case, the Nit value increases from 5×1011 cm-2 to 2×1012 cm-2 after 3 hours of gamma radiation exposure, whereas it increases from 5×1011 cm-2 to 4×1012 cm-2 for "combined gamma and electrical stress".Dissertation/Thesis
Ph.D. Materials Science and Engineering 2011
29
Lin, Shin-Wei, e 林仕尉. "Conductive transparent oxide applied to GaN Schottky barrier diodes". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/04735008512118252762.
30
TSAI, DONG-HUN, e 蔡東翰. "Transparent Conductive Oxide of Crack Filling Flexible Substrate Technology". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/685kg9.
Abstract (sommario):
碩士南臺科技大學
光電工程系
104
Indium tin oxide (ITO) with good electro-optical properties has been widely used in display and touch panel nowadays. Currently substrates are still base on glass, but products will be lightweight, flexible and extremely high impact in the future, Therefore the flexible substrate will become the mainstream. In this study, that pre-cracked ITO to produce cracks by self-made bending me-chanical. When bending, individual bend radius 12mm, 10mm and 4mm repeatedly bent 1000 cycles. Then use the sputtering machine to deposited 20nm, 40nm and 60nm thickness in cracks. During deposited, administered flexible substrate a pre-strain. To investigate the above-described method whether helps ITO film to reply electrical and to increase the mechanical properties. Result showed that ITO substrate after flexing, the resistance will higher, even brock and can’t conductive. Crack Filling will reduce the resistance impedance has risen ITO. When the ITO film after the bending process, the resistance will not bend to a cer-tain bending radius has sharply increased the situation will be gradual rise. When re-peated bending, although not yet the same mechanical properties as the original PET/ITO. In 127μmPET / ITO presplit + 40nmITO its mechanical properties closest to the original ITO film.
31
Zheng, Jun-Jie, e 鄭俊傑. "Transparent Conductive Oxide Thin Films for Solar Cell Application". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/59161629052745668661.
Abstract (sommario):
碩士國立高雄海洋科技大學
微電子工程研究所
99
Zinc oxide is a wide and direct band gap of semiconductor. The excitation wavelength of light is short wavelength, so it is widely used in optical materials. Therefore, this thesis focuses on transparent conductive oxide - zinc oxide(ZnO). This thesis will try doped aluminum, nitrogen atoms in the ZnO film for analysis of materials and research the practical application. This thesis will use Sol-gel method to derive aluminum doped ZnO (AZO, ZnO: Al) and p-type aluminum co-doped ZnO (NZO, ZnO: Al: N) film. For different preparation conditions and heat treatment conditions, the film’s electrical, optical and structural properties were measured by using UV-VIS-NIR spectrophotometer, photoluminescence(PL), Raman spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) and Hall’s measurement. Finally, based on the investigation results, the film’s properties were identified and discussed.
32
LIN, PO-CHUN, e 林柏均. "Manufacturing process and application of conductive nickel oxide fiims". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/36895117639598766494.
33
Wang, Chin-wen, e 王志文. "Deposition of transparent conductive oxide films by spray pyrolysis". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/57647545803062306579.
Abstract (sommario):
碩士國立臺南大學
材料科學系碩士班
100
Transparent conductive films have been widely used in various optoelectronic devices, wherein the fluorine-doped tin oxide (FTO) films are suitable for the solar cells application because of good thermal stability and higher acid resistance. In recent years, some researchers have tried to change the FTO surface texture to improve the performance of solar cells. As for dye-sensitized solar cells, the structure of photoanode is an important parameter for enhancing their performance. In this research, the spray pyrolysis method will be used to prepare the conductive FTO film and the porous layer of aluminum-doped zinc oxide (AZO). For the FTO film, we could enhance its haze by changing the spray parameters. By changing the spray time, the FTO surface would produce some spherical particles which contribute to increasing the haze of FTO films. In infrared region the haze was improved by 7 % and a 12 % improvement was obtained in the visible region. In the spray deposition of AZO coatings, we could get porous layer by adding PVB to zinc salt solution. In addition, we could also take advantage of the rapid deposition of the spray pyrolysis with the sol-gel solution to achieve porous layers.
34
Hsieh, Cheng-Kang, e 謝振剛. "Characteristics of transparent and conductive aluminum zinc oxide thin film". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/20899995915943894960.
35
Hsieh, Chi-Hsing, e 謝繼興. "Studies on Graphene Oxide-Ag and Conductive Polythiophene Nano-Composites". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/a68te2.
Abstract (sommario):
碩士國立臺北科技大學
有機高分子研究所
100
The aim of this study is to prepare graphene oxide-Ag /conductive poly (3-4ethylenedioxythiophene) nano-composites. We blend graphene oxide before and after the surface attractive of nano Ag and poly(3-4ethylenedioxythiophene) - polystyrene sulfonic acid that synthesized. The dispersion of graphene in composites and conductivity were tested and discussed. The polythiophene derivatives we synthesized are monomer 3-4ethylenedioxythiophene、poly(3-4ethylenedioxythiophene) -polystyrene sulfonic acid (PEDOT:PSS) polymer. There are two parts about the surface modification of graphene, the first part of the Hummers method oxidized graphene (GO) ; second part of the nano Ag ion attract mechanism by chemical reduction of graphene oxide to make nano Ag ions to restore nano Ag and graphene. We blend graphene oxide before and after the surface attractive of nano Ag and poly(3-4ethylenedioxythiophene) - polystyrene sulfonic acid that synthesized. The dispersion of graphene in composites and conductivity were tested and discussed.The products were characterized by NMR、FT-IR、TGA、UV-vis、XRD、Raman、XPS、AFM、SEM、TEM、Milliohmmeter identification of samples of characteristics.
36
Kao, Yu-chun, e 高鈺鈞. "Growth and Characterization of Transparent Conductive Oxide InGaSnO Thin Films". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/946pan.
Abstract (sommario):
碩士大同大學
光電工程研究所
102
In this work, InGaSnO (IGTO) thin films were grown by plasma-assisted molecular beam epitaxy in order to demonstrate quaternary semiconductor IGTO suitable for transparent conductive oxide (TCO) applications. First of all, In1-xGaxO (x means the cation atoms percentage of the gallium in the compound) thin films were fabricated on sapphire. Concentration of material Ga was controlled by tuning Ga cell temperature between 480 oC ~700 oC, and value of x was between 0.34 ~ 0.7, respectively. The X-ray diffraction (XRD), Transmittance, and Hall measurement are employed to characterize the physical and electrical properties. When x is lower than 0.41, IGO thin films are revealed cubic structure. However, IGO thin films are appeared amorphous between 0.41< x <0.7. With flux of Ga rising above 0.7, crystalline of monoclinic structure of IGO is exhibited by XRD results. Furthermore, high transmittance is estimated as 86% and resistivity is 3.4×10-2 ohm-cm. For TCO requirement, the results of IGO thin films are insufficient on its electrical characterization. In the second step, Sn was lead into IGO to produce high electrical efficiency quaternary semiconductor IGTO. XRD results were demonstrated amorphous structure of IGTO thin films which exhibited lowest resistivity as 4.0×10-4 ohm-cm and high transmittance 94% approximately when concentration of Sn was smaller than 70%. In further, surface roughness was calculated only 1.5 nm by atomic force microscope (AFM). Finally, reducing growth temperature was obtained the best electrical efficiency behavior, conductivity is increase 1.5 times from 600 oC to 400 oC.
37
Chen, Xin-En, e 陳馨恩. "Effects of Annealing Process on AZO Transparent Conductive Oxide Film". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/41785583565286333088.
Abstract (sommario):
碩士國立屏東科技大學
機械工程系
93
The purpose of this study is to deposite AZO transparent conductive film on corning glass substrate using radio frequency magnetron sputtering, then treats AZO thin film in laser annealing. Meanwhile, the effects of process parameters on resistivity are investigated. The construct of this study can be divided into three parts: Firstly, one-factor-at-a-time method is used to arrange the sputtering parameters for experimental work. The selected sputtering parameters include Al RF power, DC bias and working gas. Sputtering experiments are performed using the RF magnetron sputtering system, while the measurements of resistivity are conducted and compared. Consequently, the optimum setting of sputtering parameters for resistivity can be found. Secondly, an orthogonal array of Taguchi method is used to arrange the laser annealing parameters for experimental work. The selected laser annealing parameters include peak power, focused position, working speed and number of pulse. Annealing process is carried out using a pulsed Nd:YAG laser machine. An improvement of decreasing resistivity has been found which corresponding to a setting of optimum laser annealing parameters. Thirdly, the measurements of deposited rate, microstructure and Optical transmission are performed, then the relationship between their characteristics with the resistivity of AZO film is developed. In this study, the results indicate that the minimum resistivity for sputtering process is 6.087×10-3 Ω-cm. It can be reduced to a less value of 4.119×10-3 Ω-cm after conducting the optimal parameters for annealing treatment that improving 32.3% in resistivity. In addition, it shows that the Al RF power and peak power are the most significant sputtering parameters affecting resistivity of AZO film. If the Al RF power increases, then deposited rate increases. Consequently, the thin film attains more detailed grown surface, smaller crystalline size and increasing diffraction intensity that makes resistivity reduce. However, an increase in DC bias and the introduce of hydrogen causes a decrease in deposited rate that leads an over detailed grown surface and a decrease in diffraction intensity. As a result, the resistivity is unable be improved anymore. When the laser annealing process performed, it gives peak power increasing, makes better crystallizing of thin film such that lower resistivity can be obtained. On the other hand, the optical transmission reaches above 85% in spite of the change in settings of parameters for AZO thin film. It indicates that the composition of thin film makes no effect on optical characteristic.
38
Peng, Yen-chun, e 彭彥鈞. "Zinc Oxide as Transparent Conductive Material from First Principles Analysis". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/32145363935128155397.
Abstract (sommario):
碩士明志科技大學
材料工程研究所
100
In this work, the properties of electrical and optical in ZnO and GZO (Ga-doped ZnO)will be studied from first-principle. In GGA+Ud+Up method, The calculated band gap and lattice parameter of pure ZnO are 3.37 eV and 3.258 Å , which are good with the experiments. The calculated band structures of substitutional and interstitial Ga-doped ZnO show that the interstitial Ga atom will be generated deep level in band gap, which will significantly decrease the transmittance in the visible light region. Comparing with the pure ZnO, transmittance decrease from 89.2% to 59.0(Gai(oct) ) or 66.1%(Gai(tet) ). When the doping concentration from 1.4 to 25.0 at%, the optical band gap are increased with impurities states of CBM. However, the occupied states is displayed delocalization at 12.5 at% doping concentration. In contrast, the concentration of 25.0 at% will be become localized state, which show that the free carries mobility are decrease. The optical propurties show that the average transmittance are maintained more than 90% when doping concentration from 1.4 to 6.2 at%. However, the high doping concentration will strongly reduce transmittance because of large carries absorption.The research of GZO with nature defects found that the VZn and Oi easy to form at O-rich condition. And the contribution of acceptor levels which kill Ga donors. Although all the band gap narrowing(3.0 and 2.88 eV) and maintained high ransmittance, but the larger energy barrier cannot excited free electrons form valence band to conduction band. In addition, the analysis of PDOS show that the states of localized O-2p will be decreased free carries mobility.
39
Chang, Chun-Yu, e 張淳瑜. "The Properties of Transparent Conductive Oxide ITO Films Flexible Substrates". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/77824003032172702583.
Abstract (sommario):
碩士淡江大學
機械與機電工程學系碩士班
101
Precipitation method In this study were prepared successfully doped La, Mo, K –doped ITO powders, its doping concentration of 4at%, 6at%, 8at%, to explore its powder color, electrical and optical properties. And solvothermal increase the ITO powder doped with oxygen ion vacancies by XRD diffraction doping elements that do not change the characteristic peak ITO, and then analyzed by the full spectrum, that there are La,K-doped can improve the transmittance of ITO, so that in the visible region to achieve good penetrate, penetration Mo-doped will make the poor; by the Hall voltage measurements of its electrical properties, can know the doping element does not improve the conductivity of ITO, the amount of dopant ions will increase the carrier concentration, but will decrease the mobility.
40
Kao, Ruei-Hung, e 高瑞鴻. "Growth and Characterization of Transparent Conductive Oxide ZnSnO Thin Films". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/31834541829439541488.
Abstract (sommario):
碩士大同大學
光電工程研究所
101
ZnSnO (ZTO) thin films were grown on sapphire by using plasma-assisted molecular beam epitaxy. The tin concentration was controlled by varying tin cell temperature. When tin content reaches to 5 at.%, the structure of ZnSnO thin films is transferred from crystalline to amorphous, which is determined by X-ray diffraction (XRD). The lattice constant in c-axis of ZnO:Sn films linearly increases with TSn increased, which implied the valence electron number of tin is +2. Based on absorption spectra result, the principal structure of ZTO is respectively on ZnO in crystalline region (denoted as c-ZTO) and SnO2 in amorphous region (a-ZTO). There is the lowest resistivity (7.09 × 10-4 ohm-cm) and the highest mobility (18.9 cm2/V-s) in a-ZTO as tin content reached 32.3%. In addition, the mobility of a-ZTO is enhanced by decreasing growth temperature. The SnO2-based ZTO (32.3% Sn content) grown on 600℃ substrate temperature has the highest mobility as 23 cm2/V-s.
41
Jie, Chen Zheng, e 陳政傑. "A study of indium tin-oxide transparent conductive oxide films by using electron-beam evaporation". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/60540112983326686828.
Abstract (sommario):
碩士明新科技大學
化學工程與材料科技系碩士班
101
Transparent conductive electrodes with high transmittance and low resistance to optoelectronic device have gradually been widely used，such as touch panel、solar call、liquid crystal displays、with the rapid expansion of these product markets、the growth transparent conductive electrode rapidly increase in demand.Wherein the Indium tin oxide (Indium Tin Oxide; ITO) plays the important role of the conductive electrodes in a plane display. ITO film having a low resistance, and have a high transmittance in the visible range, the method of the preparation of indium tin oxide, mainly by sputtering method and electron beam deposition method, wherein the electron beam deposition method does not cause the surface of the elementinjury, and therefore subject to widespread attention. In this study, using an electron beam deposition method a growing Indium tin oxide thin film on the sodaline glass. Study their structural, electrical and optical properties of the thin film micro different deposition thickness, substrate temperature, spot oxygen flow and subsequent heat process.Using X-ray diffraction analyzer crystalline; Scanning electron microscope to observe the surface morphology of the sample; UV / VIS / NIR spectrometer transmittance ; sheet resistance of the four-point probe studies; Hall effectThe measurement to obtain the carrier concentration and the mobility of the thin film. The interpretation of the results, indium tin oxide film at a substrate temperature of 200 oC growth ITO film 100 nm thin film growth leads to 8 sccm O2 annealing at 300 ℃ in the 550nm transmittance of 98%, you can get a better quality factor of 0.055Ω-1, the experimental results using an electron beam vapor deposition by appropriate annealing the transparent conductive film of low resistance and high transmittance can be obtained.
42
Cheng, Hao-Wen, e 鄭皓文. "Aluminum Doped Zinc Oxide Transparent Conductive Oxide Thin Film Deposited by Arc Ion Plating System". Thesis, 2017. http://ndltd.ncl.edu.tw/handle/kmzc4r.
Abstract (sommario):
碩士國立交通大學
平面顯示技術碩士學位學程
105
The project aims to analysis the properties of Transparent Conducting Oxide thin film of Al doped ZnO (AZO) deposited on glass、silicon wafer and PET substrates though controlling various parameters including alloy target with 2% and 3% Al-Zn and oxygen flow from 10-150 sccm in a 100℃ chamber of Arc ion plating system.The film properties analysis include optical character, electrical and structure properties by UV-Visible, Hall measurement, X-ray powder diffraction (XRD), Scanning Electron Microscope (SEM), Alpha-step, and Four Point Probe systems. Furthermore, the optical characters and electrical properties will be studied on PET substrate by different radius of curvature of flexural loads. From the testing results, the average transmittance under visible range (about 400-700nm) of all the AZO films are higher than 80%. The best result of average transmittance could reached 89%. The best resistivity was 3.769×10-4 Ω-cm. The homogeneity of electrical resistance on 10×10 cm2 PET substrate was 9.5%.The films deposited under 100℃ chamber will carry the properties of (002) C-axis orientation by XRD analysis.
43
Lu, Chun-Yu, e 盧俊宇. "The Application of Indium Tin Oxide Conductive Layer for AlGaInP LEDs". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/82555931496472810357.
Abstract (sommario):
碩士大葉大學
電機工程學系
97
Indium-Tin Oxide, was introduced to enhance the current spreading and been a transparent electrode. ITO is widely used on electro optical devices due to its high conductance (ρ=2.5×10-4Ω‧cm) and superior transparency (>90%). On a conventional AlGaInP LED, it is hard to form a good ohmic contact between ITO and GaP window layer. In order to resolve this issue, we formed a Ni/ITO layer on GaP to obtain a good ohmic contact in this study. In this work, a Ni(6 nm)/ITO(230 nm) layer was deposited onto the AlGaInP LED by an electron beam evaporation system, then we measured the sheet resistance and transmittance.The transmittance of Ni/ITO layer can reach 91% at 630nm in this experiment. The Ni/ITO layer, annealed in a furnace at 450℃ under air ambient for 15 min, is found to achieve the lowest sheet resistance. We regard the Ni/ITO layer as a contact layer of window layer of AlGaInP LEDs for application, the drive voltage, drop of about 0.04V and 0.13V at an operation current of 20mA, as compared to the LED with GaP and GaP/ITO structure. The luminous intensity of GaP/Ni/ITO structure LED is 1.23 and 1.62 times higher than that of GaP and GaP/ITO structure LED at an operation current of 100mA. Key Words: ITO, AlGaInP, LEDs.
44
張旻瑋. "With different substrate deposition of zinc oxide transparent conductive film studies". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/22329978781985140281.
Abstract (sommario):
碩士建國科技大學
電機工程系暨研究所
101
In this study, the use of RF magnetron sputtering at four different substrates (Glass, a-SiC/glass, a-Si/glass, Si) deposition of aluminum zinc oxide (AZO) transparent conductive film, and explore different RF power, heat effects. Using the spectrophotometer (UV / VIS) analysis of the optical properties of thin films, X-ray diffraction (XRD) analysis of crystal structure, electrical properties, the use of the Hall effect device (Hall Effect) measuring resistivity, carrier concentration and electron mobility . The a-Si substrate, a working pressure of the sputtering power of 100W in an Ar gas flow rate 15sccm 5mtorr the carrier concentration 7.07x1020cm-3, mobility 1.455cm2/Vs, resistivity of 6.07x10-3Ω-cm, temperature of 400 ℃ annealing time is 10min the carrier concentration 8.6x1020cm-3, mobility 9.45cm2/Vs, resistivity 6.71x10-4Ω-cm, in the visible range, the film transmittance of the glass substrate than 80%, a-Si substrate, it is because the a-Si it will accommodate a light absorption film penetration is not high. Keyword：AZO、RF magnetron sputter、different substrates
45
Liao, Wei Chun, e 廖韋竣. "Preparation and characteristics of Al-doped zinc oxide transparent conductive films". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/14976210732554546355.
Abstract (sommario):
碩士明新科技大學
精密機電工程研究所
101
ZnO is the n-type II-VI semiconduction with a wurtzite structure of hexagonal crystal and lattice constant of a =3.25 Å, c=5.207 Å. This semiconductor material has a wide-bandgap (3.37 eV) and high exction binding energy (60 meV). One-dimensional zinc oxide nanorods for the electrode material of dye-sensitized solar cells (DSSCs), have caused move discussion in recent years, due to nanorods of zinc oxide and titanium dioxide, and zinc oxide nano-particles have higher mobility. In this thesis, the radio frequency (RF) magnetron sputtering sytem is used to deposit conducting AZO thin films on the ITO glass substrate. The Al-doped zinc oxide films were processed at various annealing temperatures of (150℃, 250℃, 350℃,450℃) for (30 min and 60 min) to investigate the optimal processing condition oxide seed layer deposited on substrate and then surface modification for seed layer by H2 plasma, resulting in the enhanced surface roughness and hydrophilic of aluminum-doped oxide seed layer. The physical the electrical, microstructure characteristics of Al-doped ZnO films were measured by using the X-ray diffraction for crystal structure analysis, UV-visible spectrometer (UV-Vis) for optical properties, four-point measurement for electrical characterization, and emission scanning electron microscope (SEM) for surface morphology analysis. To investigate the optimization of process parameters of Al-doped zinc oxide thin films, by the mentioned above measurment. Experimental results show that the resistivity of thin film resistor form 1.26x10-2 Ω.cm reduced to 1.08x10-4Ω.cm, and the optical transmittance of 85.0%. From the annealing treatment at temperatures of 150℃, 250℃, 350℃,450℃ for 30 minutes, it can be found at the annealing temperature of 450℃ for 30 minnutes, the optimum resistivity of 1.08x10-4 Ω.cm and optical transmittance of 85.0% were achieced. AZO/ITO film on substrate processed at annealing temperature of 450℃, and H2 plasma treatment, the contact angle of the substrate surface decreased, and exhibited surface hydrophilic and -OH functional groups, which is in favor of applications of solar energy, a transparent conductive film, light emitting diodes, LCD.
46
Chen, Wen-Hua, e 陳文華. "Growth of Zinc Oxide Transparent Conductive Film by RF Magnetron Sputtering". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/45633610755800844278.
Abstract (sommario):
碩士國立成功大學
化學工程學系碩博士班
93
Radio-frequency magnetron sputtering method has been employed to deposit Aluminum-doped zinc oxide. The mechanism of doping by incorporating Aluminum in zinc oxide was studied. Besides, attempts have been made to deposit at right condition to get zinc oxide film with high conductivity and high transparency in visible light range. Aluminum incorporation was demonstrated to be able to enhance the conductivity of zinc oxide significantly. Various properties of Aluminum doped zinc oxide were studied by varying the deposition conditions. Aluminum doped zinc oxide films on corning glass have been prepared by rf reactive magnetron sputtering from targets with different dopant concentrations, oxygen partial pressure, working pressure, RF power and substrate bias. The optical, electric, surface morphology and structure properties of the sputtered ZnO:Al thin films have been investigated by spectroscopy (UV-Vis), X-ray diffraction , SEM , ESCA and Hall effect measurement. When the Aluminum composition in the film is too low, the carrier concentration in zinc oxide film becomes low. When the Aluminum composition is too high, the donors in the zinc oxide film will induce electron scattering by the ionized impurities. Therefore, an optimum hydrogen composition exists to minimize the resistivity of the doped zinc oxide film. Radio-frequency power affects the degree of ionization of inlet gas in the plasma, the sputtering yield and the crystallization process, 100W is found to be the optimum power to obtain a high conductivity zinc oxide film.
47
Chen, Bo-Quan, e 陳柏全. "Study of MAPbI3 perovskite solar cells without transparent conductive oxide film". Thesis, 2018. http://ndltd.ncl.edu.tw/handle/hqa6j4.
Abstract (sommario):
碩士國立臺北科技大學
光電工程系
106
In this study, perovskite solar cells were fabricated using highly conductive PEDOT:PSS as conductive material instead of traditional indium tin oxide (ITO). First, a conductive layer, a hole transport layer, and an active layer film are prepared by spin-coating, and then a C60 and silver electrode are formed by a thermal evaporation method. The structure is as follows: Glass/highly conductive PEDOT:PSS /PEDOT:PSS/CH3NH3PbI3/ C60/Ag. In this study, DMSO was used to stabilize the film stability of conductive film, and a flat MAPbI3 crystal film was formed on the PEDOT:PSS film by One-Step spin coating to realize the production of an organic perovskite solar cell. Field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and UV-VIS transmission spectroscopy were used to observe the optical properties such as surface morphology, crystallite size, crystal phase, and light transmission. We changed the thickness of the transparent conductive layer and the hole transport layer, discussed the differences of solar cells under different conditions, and measured the optical properties under different conditions to be inseparable from the perovskite solar cells. The J-V curve, open circuit voltage (VOC), short circuit current density (JSC), fill factor (F.F), and power conversion efficiency (PCE) of the solar cells.
48
LAI, CHI-HUAI, e 賴祈淮. "Preparation of silver/thiol reduced graphene oxide composites for conductive materials". Thesis, 2019. http://ndltd.ncl.edu.tw/handle/g8rs57.
Abstract (sommario):
碩士國立臺北科技大學
資源工程研究所
107
In recent years, due to the rapid development of the electronics industry, the characteristics of a single material can not meet the progress of the times. In this study, the surface properties and electrical properties of reduced graphene oxide were mainly used to adsorb silver ions after modification with MPTMS, thereby improving the conductivity of reduced graphene oxide. The study is divided into four parts: The first part is the discussion on the modification of graphene oxide. The solvothermal method is used to prepare thiol-graphene oxide. The mechanism of MPTMS on the degree of surface modification and surface reaction of graphene oxide is discussed. The second part is to investigate the effect of thiol-graphene oxide on the adsorption of Ag(I) in silver nitrate at different pH, time, concentration and temperature, and discuss its adsorption mode. The third part is to use L-ascorbic acid as a reducing agent to investigate the change between surface thiol-graphene oxide and silver metal particles before and after silver/thiol-graphene oxide reduction. The fourth part is to discuss the conductivity analysis of silver/thiol-reduced graphene oxide and silver/reduced graphene oxide. The experimental results show that L-ascorbic acid can effectively reduce graphene oxide without destroying the mercaptan structure in MPTMS. In this study, the optimal mass of MPTMS was 5%, and after the adsorption, the surface silver ions were reduced to silver metal particles. After the reduction, the amount of extra silver added could reach 4469 S/cm, so the silver/thiol reduction oxidation was used in this study. Graphene has the potential of conductive materials.
49
Peng, Yeh-Chun, e 彭彥鈞. "Electrochemical behavior of transparent conductive Al-doped zinc oxide(AZO) and tin-doped indium oxide(ITO) films". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/40131951394867959955.
Abstract (sommario):
碩士國立中央大學
機械工程研究所
95
The electrochemical behavior of Al-doped zinc oxide(AZO)、Tin-doped indium oxide(ITO)、Sc-doped AZO and AZO annealed at 300℃ for 1hr were immersed in 3.5%NaCl and in different buffer solutions varying with pH were investigated in this work. Electrochemical techniques such as measurement of open circuit potential, linear polarization, cyclic voltammograms, electrochemical impedance spectroscopy were employed. Reaction products on the surface of oxides under different potentials were examined for those produced on a variety of potentials in different duration. The corrosion resistance of difference oxide films to 3.5%NaCl solution decreases in the order: annealed 300℃ AZO＞ITO＞Sc-doped AZO＞AZO. Sc-doped tends to in increase the corrosion resistance of the AZO thin films. The corrosion resistance to 3.5%NaCl for Sc-doped AZO decreases with decreasing the concentration of Sc-doped：0.242wt%＞0.134wt%＞0.006wt%＞0wt%. The electrochemical behavior of AZO and the AZO anneal at 300℃ for 1h in various buffer solutions was studied using cyclic voltammetry under a scan rate of 50mV/s. The reduction current and characteristic oxidation current are lower in the annealed AZO then the usual AZO, this fact reflects that annealed AZO is more resistance to corrosion in buffer solutions.
50
Huang, Chia-Cheng, e 黃家城. "Study of properties of transparent conductive oxide thin films and related heterojunction". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/46218736657405112748.
Abstract (sommario):
博士國立中興大學
電機工程學系所
101
In this study, The p-type nickel oxide (NiO), n-type gallium-doped zinc oxide (GZO) and titanium-doped zinc oxide (TZO) thin films were deposited on glass by RF magnetron sputtering. We investigated the effects of deposition parameters on structure, optics and electrical of properties of p-type NiO thin, n-type GZO and TZO thin films. Finally, transparent p-n heterojunction diodes were fabricated using the developed NiO, GZO and TZO films to study the effects of sputter power on their structure, optics and electrical properties. We investigated the effects of deposition parameters such as sputtering power, deposition time and gas ratio on properties of NiO thin films. Increasing oxygen gas ratio(0% to 100%), the transmittance of the film will result in significantly decreased, the resistivity will be significantly reduced. The oxygen gas ratio 100% of NiO thin film has low a resistivity of 5.7×10-2 Ω-cm. The resistivity of the NiO thin films decreased with increasing deposition power, but the transmittance of the NiO thin films decreased. Increasing sputter power at 75 to 150 W, the prepared films achieved the resistivity of 1.4×10-1 Ω-cm and average transmittance of 62% in the wavelength range of 400-700 nm at the RF power of 100 W. Radio frequency magnetron sputtering was used to deposit GZO thin films (deposited by changing the deposition power from 75W to 150W) on glass substrates to form p(NiO)-n(GZO) heterojunction diodes with high transmittance. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of ZnO (GZO) were observable in the NiO/GZO heterojunction devices, and the GZO thin films showed a good c-axis orientation perpendicular to the glass substrates. The resistivity of the GZO thin films decreased and then increased with increasing deposition power. All the GZO thin films had average optical transmittance 81% in the wavelength range of 400-700 nm. The variations in the optical band gap (Eg value) of the GZO thin films were revealing that the measured Eg value decreased with increasing deposition power. The prepared films had excellent electrical properties (ρ=4.1×10-3Ω-cm) and average optical transmittance 84% in the wavelength range of 400-700 nm for theGZO thin films deposited with the RF power of 125W. In the forward bias condition, the turn-on voltages of the NiO/GZO heterojunction diodes were about 1.85 V, 1.37 V, 0.97 V, and 1.25 V as the deposition powers of the GZO thin films were 75 W, 100 W, 125 W, and 150 W, respectively. The result show that the NiO/GZO heterojunction diode was dominated by the space-charge-limited-current (SCLC) theory. All the the NiO/GZO heterojunction diodes had average optical transmittance 51~65 % in the wavelength range of 400-700 nm. The variations in the optical band gap (Eg value) of the the NiO/GZO heterojunction diodes were revealing that the measured Eg value decreased with increasing deposition power. Radio frequency magnetron sputtering was used to deposit TZO thin films (deposited by changing the deposition power from 75W to 150W) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of ZnO (TZO) were observable in the NiO/TZO heterojunction devices, and the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. The resistivity of the TZO thin films decreased with increasing deposition power. All the TZO thin films had average optical transmittance 82% in the wavelength range of 400-700 nm. The variations in the optical band gap (Eg value) of the TZO thin films were revealing that the measured Eg value decreased with increasing deposition power. The prepared films had excellent electrical properties (ρ=2.2×10-3Ω-cm) and average optical transmittance 82% in the wavelength range of 400-700 nm for the TZO thin films deposited with the RF power of 150W. In the forward bias condition, the turn-on voltages of the NiO/TZO heterojunction diodes were about 2.57 V, 1.83 V, and 2.05 V as the deposition powers of the TZO thin films were 100 W, 125 W, and 150 W, respectively. The result show that the NiO/TZO heterojunction diode was dominated by the space-charge-limited-current (SCLC) theory. All the the NiO/TZO heterojunction diodes had average optical transmittance 63~68 % in the wavelength range of 400-700 nm. The variations in the optical band gap (Eg value) of the the NiO/GZO heterojunction diodes were revealing that the measured Eg value decreased with increasing deposition power.