Articoli di riviste sul tema "CMOS Device and Integration"
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Shawkat, Mst Shamim Ara, Mohammad Habib Ullah Habib, Md Sakib Hasan, Mohammad Aminul Haque e Nicole McFarlane. "Perimeter Gated Single Photon Avalanche Diodes in Sub-Micron and Deep-Submicron CMOS Processes". International Journal of High Speed Electronics and Systems 27, n. 03n04 (settembre 2018): 1840018. http://dx.doi.org/10.1142/s0129156418400189.
Testo completoKrupar, Joerg, Heiko Hauswald e Ronny Naumann. "A Substrate Current Less Control Method for CMOS Integration of Power Bridges". Advances in Power Electronics 2010 (23 settembre 2010): 1–11. http://dx.doi.org/10.1155/2010/909612.
Testo completoKogut, Igor T., Victor I. Holota, Anatoly Druzhinin e V. V. Dovhij. "The Device-Technological Simulation of Local 3D SOI-Structures". Journal of Nano Research 39 (febbraio 2016): 228–34. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.228.
Testo completoLeenheer, Andrew, Connor Halsey, Daniel Ward, Deanna Campbell, John S. Mincey, Evan M. Anderson, Scott W. Schmucker et al. "Atomic-scale Dopant Integration During CMOS Device Fabrication". ECS Meeting Abstracts MA2021-02, n. 30 (19 ottobre 2021): 918. http://dx.doi.org/10.1149/ma2021-0230918mtgabs.
Testo completoHuey, Sidney, Balaji Chandrasekaran, Doyle Bennett, Stan Tsai, Kun Xu, Jun Qian, Siva Dhandapani, Jeff David, Bogdan Swedek e Lakshmanan Karuppiah. "CMP Process Control for Advanced CMOS Device Integration". ECS Transactions 44, n. 1 (15 dicembre 2019): 543–52. http://dx.doi.org/10.1149/1.3694367.
Testo completoPerez-Bosch Quesada, E., E. Perez, M. Kalishettyhalli Mahadevaiah e C. Wenger. "Memristive-based in-memory computing: from device to large-scale CMOS integration". Neuromorphic Computing and Engineering 1, n. 2 (18 novembre 2021): 024006. http://dx.doi.org/10.1088/2634-4386/ac2cd4.
Testo completoKitchen, Jennifer, Soroush Moallemi e Sumit Bhardwaj. "Multi-chip module integration of Hybrid Silicon CMOS and GaN Technologies for RF Transceivers". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (1 gennaio 2019): 000339–82. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tp1_010.
Testo completoTabata, Toshiyuki, Fabien Rozé, Louis Thuries, Sébastien Halty, Pierre-Edouard Raynal, Imen Karmous e Karim Huet. "Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices". Electronics 11, n. 17 (23 agosto 2022): 2636. http://dx.doi.org/10.3390/electronics11172636.
Testo completoPan, James N. "Chromatic and Panchromatic Nonlinear Optoelectronic CMOSFETs for CMOS Image Sensors, Laser Multiplexing, Computing, and Communication". MRS Advances 5, n. 37-38 (2020): 1965–74. http://dx.doi.org/10.1557/adv.2020.273.
Testo completoOstling, Mikael, e Per-Erik Hellstrom. "(Invited) Sequential 3D Integration of Ge Transistors on Si CMOS". ECS Meeting Abstracts MA2023-02, n. 30 (22 dicembre 2023): 1511. http://dx.doi.org/10.1149/ma2023-02301511mtgabs.
Testo completoJacob, Ajey P., Ruilong Xie, Min Gyu Sung, Lars Liebmann, Rinus T. P. Lee e Bill Taylor. "Scaling Challenges for Advanced CMOS Devices". International Journal of High Speed Electronics and Systems 26, n. 01n02 (17 febbraio 2017): 1740001. http://dx.doi.org/10.1142/s0129156417400018.
Testo completoAlexandru, Mihaela, Viorel Banu, Matthieu Florentin, Xavier Jordá, Miguel Vellvehi e Dominique Tournier. "High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates". Materials Science Forum 778-780 (febbraio 2014): 1130–34. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1130.
Testo completoTakenaka, Mitsuru, e Shinichi Takagi. "III-V/Ge Device Engineering for CMOS Photonics". Materials Science Forum 783-786 (maggio 2014): 2028–33. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.2028.
Testo completoKim, Hyejin, Geonhui Han, Seojin Cho, Jiyong Woo e Daeseok Lee. "Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation". Nanomaterials 14, n. 2 (16 gennaio 2024): 201. http://dx.doi.org/10.3390/nano14020201.
Testo completoMols, Yves, Abhitosh Vais, Sachin Yadav, Liesbeth Witters, Komal Vondkar, Reynald Alcotte, Marina Baryshnikova et al. "Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate". Materials 14, n. 19 (29 settembre 2021): 5682. http://dx.doi.org/10.3390/ma14195682.
Testo completoSebaai, Farid, Jose Ignacio Del Agua Borniquel, Rita Vos, Philippe Absil, Thomas Chiarella, Christa Vrancken, Pieter Boelen e Evans Baiya. "Poly-Silicon Etch with Diluted Ammonia: Application to Replacement Gate Integration Scheme". Solid State Phenomena 145-146 (gennaio 2009): 207–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.207.
Testo completoSmith, A., Qi Li, Agin Vyas, Mohammad Haque, Kejian Wang, Andres Velasco, Xiaoyan Zhang et al. "Carbon-Based Electrode Materials for Microsupercapacitors in Self-Powering Sensor Networks: Present and Future Development". Sensors 19, n. 19 (29 settembre 2019): 4231. http://dx.doi.org/10.3390/s19194231.
Testo completoWada, Kazumi. "A New Approach of Electronics and Photonics Convergence on Si CMOS Platform: How to Reduce Device Diversity of Photonics for Integration". Advances in Optical Technologies 2008 (7 luglio 2008): 1–7. http://dx.doi.org/10.1155/2008/807457.
Testo completoKöck, Anton, Marco Deluca, Florentyna Sosada-Ludwikowska, Günther Maier, Robert Wimmer Teubenbacher, Martin Sagmeister, Karl Rohracher et al. "Heterogeneous Integration of Metal Oxides—Towards a CMOS Based Multi Gas Sensor Device". Proceedings 14, n. 1 (19 giugno 2019): 5. http://dx.doi.org/10.3390/proceedings2019014005.
Testo completoOstling, Mikael, e Per-Erik Hellstrom. "(Invited) Sequential 3D Integration of Ge Transistors on Si CMOS". ECS Transactions 112, n. 1 (29 settembre 2023): 13–24. http://dx.doi.org/10.1149/11201.0013ecst.
Testo completoMulberry, Geoffrey, Kevin A. White, Matthew A. Crocker e Brian N. Kim. "A 512-Ch Dual-Mode Microchip for Simultaneous Measurements of Electrophysiological and Neurochemical Activities". Biosensors 13, n. 5 (26 aprile 2023): 502. http://dx.doi.org/10.3390/bios13050502.
Testo completoDunai, L., G. Peris-Fajarnés, E. Lluna e B. Defez. "Sensory Navigation Device for Blind People". Journal of Navigation 66, n. 3 (25 gennaio 2013): 349–62. http://dx.doi.org/10.1017/s0373463312000574.
Testo completoWan Muhamad Hatta, Sharifah Fatmadiana, Dayanasari Abdul Hadi e Norhayati Soin. "Laser Anneal-Induced Effects on the NBTI Degradation of Advanced-Process 45nm High-K PMOS". Advanced Materials Research 189-193 (febbraio 2011): 1862–66. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.1862.
Testo completoWANG, YANGYUAN, RU HUANG, JINFENG KANG e SHENGDONG ZHANG. "HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS". International Journal of High Speed Electronics and Systems 16, n. 01 (marzo 2006): 147–73. http://dx.doi.org/10.1142/s012915640600359x.
Testo completoThomas, Dave, Jean Michailos, Nicolas Hotellier, Gilles Metellus, Francois Guyader, Alain Inard, Keith Buchanan, Dorleta Cortaberria Sanz, Yiping Song e Tony Wilby. "Integration Aspects of the Implementation of Through Silicon Vias (TSV) for CMOS Image Sensors". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (1 gennaio 2010): 000539–56. http://dx.doi.org/10.4071/2010dpc-ta14.
Testo completoTakagi, Shinichi, Masafumi Yokoyama, Sang-Hyeon Kim, Rui Zhang e Mitsuru Takenaka. "(Invited) Device and Integration Technologies of III-V/Ge Channel CMOS". ECS Transactions 41, n. 7 (16 dicembre 2019): 203–18. http://dx.doi.org/10.1149/1.3633300.
Testo completoSong, Boxin. "Metal Oxide Neural Devices and Their Applications". Highlights in Science, Engineering and Technology 87 (26 marzo 2024): 226–31. http://dx.doi.org/10.54097/zwgj1t76.
Testo completoHall, Steve, e Bill Eccleston. "Silicon-germanium for ULSI". Journal of Telecommunications and Information Technology, n. 3-4 (30 dicembre 2000): 3–9. http://dx.doi.org/10.26636/jtit.2000.3-4.33.
Testo completoSánchez-Chiva, Josep Maria, Juan Valle, Daniel Fernández e Jordi Madrenas. "A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation". Sensors 20, n. 20 (19 ottobre 2020): 5899. http://dx.doi.org/10.3390/s20205899.
Testo completoZhang, Zhao Yun, Zhi Gui Shi, Zhen Chuan Yang e Bo Peng. "MEMS Monolithic Integration Technology". Key Engineering Materials 562-565 (luglio 2013): 1387–92. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.1387.
Testo completoSoh, Mei, T. Teo, S. Selvaraj, Lulu Peng, Don Disney e Kiat Yeo. "Heterogeneous Integration of GaN and BCD Technologies". Electronics 8, n. 3 (22 marzo 2019): 351. http://dx.doi.org/10.3390/electronics8030351.
Testo completoHeyns, M., e W. Tsai. "Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials". MRS Bulletin 34, n. 7 (luglio 2009): 485–92. http://dx.doi.org/10.1557/mrs2009.136.
Testo completoJoubert, James, e Deepak Sharma. "Using CMOS Cameras for Light Microscopy". Microscopy Today 19, n. 4 (luglio 2011): 22–28. http://dx.doi.org/10.1017/s155192951100054x.
Testo completoKumar, K. R. Lakshmi, R. A. Hadaway, M. A. Copeland e M. I. H. King. "A precision design technique for analog very large scale integration". Canadian Journal of Physics 63, n. 6 (1 giugno 1985): 702–6. http://dx.doi.org/10.1139/p85-109.
Testo completoHadizadeh, Rameen, Anssi Laitinen, Niko Kuusniemi, Volker Blaschke, David Molinero, Eoin O'Toole e Márcio Pinheiro. "Low-Density Fan-Out Heterogeneous Integration of MEMS Tunable Capacitor and RF SOI Switch". International Symposium on Microelectronics 2019, n. 1 (1 ottobre 2019): 000051–55. http://dx.doi.org/10.4071/2380-4505-2019.1.000051.
Testo completoKhaja, Fareen Adeni. "Contact Resistance Improvement for Advanced Logic by Integration of Epi, Implant and Anneal Innovations". MRS Advances 4, n. 48 (2019): 2559–76. http://dx.doi.org/10.1557/adv.2019.416.
Testo completoFan, Zhihua, Qinling Deng, Xiaoyu Ma e Shaolin Zhou. "Phase Change Metasurfaces by Continuous or Quasi-Continuous Atoms for Active Optoelectronic Integration". Materials 14, n. 5 (7 marzo 2021): 1272. http://dx.doi.org/10.3390/ma14051272.
Testo completoLi, Zhichao, Shiheng Yang, Samuel B. S. Lee e Kiat Seng Yeo. "A Two-Stage X-Band 20.7-dBm Power Amplifier in 40-nm CMOS Technology". Electronics 9, n. 12 (20 dicembre 2020): 2198. http://dx.doi.org/10.3390/electronics9122198.
Testo completoDeshpande, V. V., V. Djara, D. Caimi, E. O'Connor, M. Sousa, L. Czornomaz e J. Fompeyrine. "(Invited) Material and Device Integration for Hybrid III-V/SiGe CMOS Technology". ECS Transactions 69, n. 10 (2 ottobre 2015): 131–42. http://dx.doi.org/10.1149/06910.0131ecst.
Testo completoFilipovic, Lado, e Siegfried Selberherr. "Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors". Materials 12, n. 15 (28 luglio 2019): 2410. http://dx.doi.org/10.3390/ma12152410.
Testo completoZhang, Yinxing, Ziliang Fang e Xiaobing Yan. "HfO2-based memristor-CMOS hybrid implementation of artificial neuron model". Applied Physics Letters 120, n. 21 (23 maggio 2022): 213502. http://dx.doi.org/10.1063/5.0091286.
Testo completoBelhassen, Jérémy, Zeev Zalevsky e Avi Karsenty. "Optical Polarization Sensitive Ultra-Fast Switching and Photo-Electrical Device". Nanomaterials 9, n. 12 (7 dicembre 2019): 1743. http://dx.doi.org/10.3390/nano9121743.
Testo completoMori, Takahiro. "(Invited, Digital Presentation) Silicon Compatible Quantum Computers: Challenges in Devices, Integration, and Circuits". ECS Meeting Abstracts MA2022-01, n. 29 (7 luglio 2022): 1297. http://dx.doi.org/10.1149/ma2022-01291297mtgabs.
Testo completoKluba, Marta, Bruno Morana, Angel Savov, Henk van Zeijl, Gregory Pandraud e Ronald Dekker. "Wafer-Scale Integration for Semi-Flexible Neural Implant Miniaturization". Proceedings 2, n. 13 (10 dicembre 2018): 941. http://dx.doi.org/10.3390/proceedings2130941.
Testo completoKazior, Thomas E. "Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, n. 2012 (28 marzo 2014): 20130105. http://dx.doi.org/10.1098/rsta.2013.0105.
Testo completoBuchbinder, Miryam, Ora Eli, Sagie Rozental, Yami Bouhnik, Shimon Greenberg, Krish Mani, Yifat Cohen, Ken Mackay, Jeremy Pereira e Jeremy Alvarez Herault. "Integrating MTJ Devices into a 130nm CMOS Process Flow". Advances in Science and Technology 99 (ottobre 2016): 81–89. http://dx.doi.org/10.4028/www.scientific.net/ast.99.81.
Testo completoSebaai, Farid, Liesbeth Witters, Frank Holsteyns, Yoshida Yukifumi, Paul W. Mertens e Stefan De Gendt. "Nickel Selective Etch for Contacts on Ge Based Devices". Solid State Phenomena 219 (settembre 2014): 105–8. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.105.
Testo completoMansour, Raafat R. "RF MEMS-CMOS Device Integration: An Overview of the Potential for RF Researchers". IEEE Microwave Magazine 14, n. 1 (gennaio 2013): 39–56. http://dx.doi.org/10.1109/mmm.2012.2226539.
Testo completoFUKAISHI, MUNEO, KAZUYUKI NAKAMURA e MICHIO YOTSUYANAGI. "HIGH-SPEED AND HIGH-DATA-BANDWIDTH TRANSMITTER AND RECEIVER FOR MULTI-CHANNEL SERIAL DATA COMMUNICATION WITH CMOS TECHNOLOGY". International Journal of High Speed Electronics and Systems 11, n. 01 (marzo 2001): 1–33. http://dx.doi.org/10.1142/s0129156401000770.
Testo completoCarta, Fabio, Htay Hlaing, Hassan Edrees, Shyuan Yang, Mingoo Seok e Ioannis Kymissis. "Co-development of complementary technology and modified-CPL family for organic digital integrated circuits". MRS Proceedings 1795 (2015): 19–25. http://dx.doi.org/10.1557/opl.2015.564.
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