Bibliografie tematiche / Boron diffusion

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Letteratura scientifica selezionata sul tema "Boron diffusion"

Autore: Grafiati
Pubblicato: 4 giugno 2021
Ultima modifica: 11 febbraio 2022

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Articoli di riviste sul tema "Boron diffusion"

1

Wirbeleit, Frank. "Non-Gaussian Local Density Diffusion (LDD-) Model for Boron Diffusion in Si- and SixGe1-x Ultra-Shallow Junction Post-Implant and Advanced Rapid-Thermal-Anneals". Defect and Diffusion Forum 305-306 (ottobre 2010): 71–84. http://dx.doi.org/10.4028/www.scientific.net/ddf.305-306.71.

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Boron diffusion after implant and anneal has been studied extensively in the past, without de-convoluting the Boron diffusion behavior by the initial post implant Boron concentration profile, which is done in this work first time. To support the de-convolution approach, the local density diffusion (LDD) model is selected, because this model is based on just one single arbitrary diffusion parameter per atomic species and host lattice combination. The LDD model is used for Phosphorus and Arsenic diffusion so far and an extension to simulate Boron diffusion in presence of Boron clusters is presented here. As the result, maximum Boron penetration depth post different rapid thermal anneals and the quantification of diffusing and clustering (non-diffusing) Boron in silicon and silicon-germanium host lattice systems are given.
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Wirbeleit, Frank. "Local Density Diffusivity (LDD-) Model for Boron Out-Diffusion of In Situ Boron-Doped Si0.75Ge0.25 Epitaxial Films Post Advanced Rapid Thermal Anneals with Carbon Co-Implant". Defect and Diffusion Forum 307 (dicembre 2010): 63–73. http://dx.doi.org/10.4028/www.scientific.net/ddf.307.63.

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Boron in silicon has presented challenges for decades because of clustering and so-called transient enhanced diffusion [1-2]. An understanding of boron diffusion post rapid thermal annealing in general, and out of in situ doped epitaxially grown silicon-germanium films in particular, is essential to hetero junction engineering in microelectronic device technology today. In order to model boron diffusion, post-implantation, the local density diffusion (LDD) model has been applied in the past [3]. Via mathematical convolution of the diffusion model slope and the initial boron concentration profile, these former results were transferred to this work. In this way, non-diffusing boron was predicted to exist in the center of the presented in situ boron-doped films. In addition, boron diffusion control by co-implanted carbon was demonstrated and the applied LDD model was completed and confirmed by adapting A. Einstein’s proof [4] for this purpose.
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Aleksandrov, O. V., e E. N. Mokhov. "Boron Diffusion in Silicon Carbide". Materials Science Forum 740-742 (gennaio 2013): 561–64. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.561.

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For the description of features of boron diffusion of in silicon carbide the new two-component model is offer. The first component is the “shallow” boron - boron atoms in silicon sites (BSi). This component is prevailed in the surface region of diffusion layers and has rather low speed of diffusion. The second component is the “deep” boron – impurity-defect pairs of boron with carbon vacancy (BSi-VC). This component is prevailed in the volume region of diffusion layers and has rather high speed of diffusion. By means of model the influence of nitrogen impurity and isoconcentration diffusion of an isotope 10B are described.
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Agarwal, Aditya, H. J. Gossmann e D. J. Eaglesham. "Boron-enhanced diffusion of boron: Physical mechanisms". Applied Physics Letters 74, n. 16 (19 aprile 1999): 2331–33. http://dx.doi.org/10.1063/1.123841.

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Marchiando, J. F., P. Roitman e J. Albers. "Boron diffusion in silicon". IEEE Transactions on Electron Devices 32, n. 11 (novembre 1985): 2322–30. http://dx.doi.org/10.1109/t-ed.1985.22278.

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Borowiecka-Jamrozek, J., e J. Lachowski. "Diffusion of Boron in Cobalt Sinters". Archives of Metallurgy and Materials 58, n. 4 (1 dicembre 2013): 1131–36. http://dx.doi.org/10.2478/amm-2013-0137.

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Abstract The paper describes the process of diffusion taking place at the surface of sinters produced from Co Extrafine powder after saturation with boron. Boronizing was performed at a temperature of 950°C for 6 and 12 hours by applying B4C powder as a depositing source, NH4Cl + NaF as an activator and Al2O3 as an inert filler. The study involved determining the diffusion coefficient, which required analyzing the microstructure and thickness of the layers and the process time. The images obtained with a Leica DM-4000 optical microscope revealed a two-phase structure of the boride layers. The presence of the two phases, i.e. CoB and Co2B, was confirmed by X-ray diffraction (XRD). A model of diffusion of boron atoms into the cobalt substrate was developed assuming the reaction diffusion mechanism. This model was used to calculate the diffusion coefficient. It required taking account of the interatomic potentials of boron and cobalt. The calculation results were compared with the experimental data concerning the diffusion of boron in other materials.
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Atabaev, I. G., Chin Che Tin, B. G. Atabaev, T. M. Saliev, E. N. Bakhranov, N. A. Matchanov, S. L. Lutpullaev et al. "Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC". Materials Science Forum 600-603 (settembre 2008): 457–60. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.457.

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The characteristics of boron diffusion in 3C-SiC at low temperature have been measured using spreading resistance technique and electroluminescence spectroscopy. The coefficient of boron diffusion in the temperature range of 1150 –1250°С has been found to be about 5.5 x 10-11–5.0 x 10-10 cm2/sec and the activation energy of boron diffusion was determined to be about 0.9 –1.15 eV. Electroluminescence spectra of 3C-SiC p-n junction structures showed peaks at 750 and 630 nm due to growth defects and carbon-silicon divacancies respectively.
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Shevchuk, E. P., V. A. Plotnikov e G. S. Bektasova. "Boron Diffusion in Steel 20". Izvestiya of Altai State University, n. 1(111) (6 marzo 2020): 58–62. http://dx.doi.org/10.14258/izvasu(2020)1-08.

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As is known, boriding is carried out to increase the wear resistance and corrosion resistance of iron-carbon alloys. Along with high hardness, borides, unfortunately, have very high fragility and high refractoriness. An effective way to counter the fragility of boride layers is to form a composite structure consisting of inclusions of solid borides in a more plastic matrix. Such coatings can be obtained by volumetric heating in a muffle furnace using a boron paste that besides a mixture of iron and boron powders contained ammonium hydroxide and activated carbon with or without liquid glass. Boriding of a surface is carried out at high temperatures =1000 °С for 5 minutes. It is experimentally found that the microhardness of the surface layer increased by about 30% compared with the microhardness of the substrate, and that the thickness of the boride layer depends on the presence of liquid glass in the coating. It has been established that specially calculated proportions of ammonia, liquid glass, and charcoal contribute to the formation of an extensive diffusion zone of iron borides, the formation of which is due to the anomalously high diffusion mass transfer of boron into the matrix.
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Venezia, V. C., R. Duffy, L. Pelaz, M. J. P. Hopstaken, G. C. J. Maas, T. Dao, Y. Tamminga e P. Graat. "Boron diffusion in amorphous silicon". Materials Science and Engineering: B 124-125 (dicembre 2005): 245–48. http://dx.doi.org/10.1016/j.mseb.2005.08.079.

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La Via, F., K. T. F. Janssen e A. H. Reader. "Boron diffusion in Co74Ti26amorphous alloy". Applied Physics Letters 60, n. 6 (10 febbraio 1992): 701–3. http://dx.doi.org/10.1063/1.106542.

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Tesi sul tema "Boron diffusion"

1

Vianez, Basilio Frasco. "Aspects of boron diffusion through hardwoods". Thesis, Bangor University, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358298.

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Jacques, Jeannette. "Boron diffusion within amorphous silicon materials". [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0012805.

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Castro, Susana Patricia. "CHARACTERIZATION OF THE BORON DOPING PROCESSUSING BORON NITRIDE SOLID SOURCE DIFFUSION". NCSU, 1999. http://www.lib.ncsu.edu/theses/available/etd-19990523-142337.

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CASTRO, SUSANA PATRICIA. Characterization of the Boron Doping Process UsingBoron Nitride Solid Source DiffusionThe purpose of this research has been to develop an optimum process for the borondoping of implants and polysilicon gates of metal-oxide-semiconductor (MOS) devices.An experimental design was constructed to determine the effects of diffusiontemperature, time, and ambient on characteristics of the doping process. A temperaturerange of 800 to 1000 degrees Celsius was studied with a diffusion time between 10 and60 minutes. Two diffusion ambients were used for doping processes, a pure nitrogenambient and a nitrogen-oxygen gaseous mixture. Device wafers were fabricated, and thetesting of MOS capacitors and van der Pauw test structures was performed to determinethe effect of diffusion conditions on flatband voltage and poly gate doping. Materialscharacterization techniques were used on monitor wafers for each diffusion process todetermine the wafer structure formed for each process and evaluate the effectiveness ofthe deglaze etch. The processes that resulted in the best device characteristics withoutsuffering from significant poly depletion effects and flatband voltage shifts were wafersdoped at 800 degrees Celsius in a pure nitrogen atmosphere for 20 minutes and 45minutes. The presence of oxygen in the atmosphere caused the depletion of boron fromthe Si wafer surface. The formation of the Si-B phase only occurred on devices processedat 1000 degrees Celsius. The deglaze process used in this experiment did not fullyremove this layer, and thus all devices doped at this temperature were seriously degraded.

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Slade, Alexander Mason Electrical Engineering UNSW. "Boron tribromide sourced boron diffusions for silicon solar cells". Awarded by:University of New South Wales. Electrical Engineering, 2005. http://handle.unsw.edu.au/1959.4/21850.

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This thesis undertakes the development, characterization and optimization of boron diffusion for silicon solar cells. Heavy diffusions (sheet resistance < 40 Ohm/square) to form a back surface field, and light diffusions (sheet resistance > 100 Ohm/square) to form oxide-passivated emitters were developed. Test structures and solar cells were fabricated to assess uniformity, lifetime and recombination effects due to the light and heavy boron diffusions. It was found that the growth of a thin ~200 ??, thermal oxide, during stabilization ??? immediately prior to the boron diffusion - was required to maintain high lifetime and reduce surface recombination (reducing the emitter saturation current density) for all boron diffusions. The heavy boron diffusion process was incorporated into the single side buried contact solar cell processing sequence. The solar cells fabricated had both boron diffused and Al/Si alloyed P+ regions for comparison. This research conclusively showed that boron diffused solar cells had significantly higher open circuit voltage compared to Al/Si alloyed devices. Fabrication of n-type solar cells, and their subsequent characterization by overlayed secondary electron image and the electron beam induced current map showed that the Al/Si alloy varied in depth from 5 to 25 micrometers deep. Methodology and characterization for light, oxide-passivated boron diffusions are also presented. This study yielded boron diffused emitters (sheet resistance > 100 Ohm/square) with low emitter saturation current. It was observed that this was possible only when the thermal oxidation after the boron diffusion was minimal, less than 1,000 ??. This was due to the segregation effect of boron with oxide, decreasing the surface concentration that in turn decreased the electric field repulsion of electrons from the surface. Device modelling of n-type solar cells is presented where the parameters of the modelling include the results of the light, oxide-passivated boron diffusions. This modelling shows n-type-base material with light oxide-passivated boron diffusion has higher potential conversion efficiency than forming a solar cell from phosphorous diffused p-type material.
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Castro, Susana Patricia. "Characterization of the boron doping process using boron nitride solid source diffusion". Raleigh, NC : North Carolina State University, 1999. http://www.lib.ncsu.edu/etd/public/etd-2923142349901421/etd.pdf.

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De, Oliveira Valmir Souza. "Mechanisms of diffusion of boron through wood". Thesis, Bangor University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235647.

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Uppal, Suresh. "Diffusion of boron and silicon in germanium". Thesis, University of Southampton, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.417592.

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Berggren, Elin. "Diffusion of Lithium in Boron-doped Diamond Thin Films". Thesis, Uppsala universitet, Molekyl- och kondenserade materiens fysik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-413090.

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In this thesis, the diffusion of lithium was studied on boron-doped diamond (BDD) as a potential anode material in lithium ion batteries (LIB). The initial interaction between deposited lithium and BDD thin films was studied using X-ray Photoelectron Spectroscopy (XPS). Diffusion is directly linked to reactions between lithium and carbon atoms in the BDD-lithium interface. By measuring binding energies of core-electrons of carbon and lithium before and after deposition, these reactions can be analyzed. Scanning Electron Microscopy (SEM) was used to study the BDD surface and the behaviour of deposited lithium. Experiments show that a chemical interaction occurs between lithium and carbon atoms in the surfacelayers of the BDD. The diffusion of lithium is discussed from spectroscopic data and suggests that surface diffusion is occurring and no proof of bulk diffusion was found. The results do not exclude bulk diffusion in later states but it was not found in the initial interaction at the interface after depositing lithium. SEM images show that lithium clusters in the nanometer range are formed on the BDD surface. The results of this study give insights in the initial diffusion behaviour of lithium at the BDD interface and possible following events are discussed.
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Golshani, Fariborz. "Boron doping of diamond powder by enhanced diffusion and forced diffusion : diffusion concentrations, mechanical, chemical and optical properties /". free to MU campus, to others for purchase, 1997. http://wwwlib.umi.com/cr/mo/fullcit?p9842530.

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Tiwari, Gyanendra P., Ratikanta Mishra e Radhey Shyam Mehrotra. "Helium migration and precipitation in irradiated and annealed copper boron alloy". Universitätsbibliothek Leipzig, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-184131.

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The paper analyses afresh the data of Russell and Hastings on the changes in lattice parameter during post-irradiation annealing of copper-boron alloy in the temperature range 823-923 K. The changes in lattice parameter are brought about by the generation of helium during irradiation through (n, α) reaction and its subsequent behavior during annealing. The new analytical procedure adopted here follows chemical kinetics route to determine the appropriate activation energies associated with the rate processes controlling the changes in lattice parameter. During the first stage of annealing, the lattice parameter decreases to a value which is below the equilibrium one. The second stage involves the recovery of lattice parameter to the equilibrium value. The diffusion of monovacancy and the jump of helium atom to vacancy on its nearest neighbor site are identified as the unit processes for the first and second stages of annealing respectively. Finally, it is suggested that a helium–monovacancy complex may act as nucleus for the formation of helium gas bubbles.
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Libri sul tema "Boron diffusion"

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Williams, Lonnie H. Integrated protection against lyctid beetle infestations: Part II laboratory dip-diffusion treatment of unseasoned banak (Virola spp.) lumber with boron compounds. New Orleans, La: U.S. Dept. of Agriculture, Forest Service, Southern Forest Experiment Station, 1985.

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Williams, Lonnie H. Integrated protection against lyctid beetle infestations: Part II laboratory dip-diffusion treatment of unseasoned banak (Virola spp.) lumber with boron compounds. New Orleans, La: U.S. Dept. of Agriculture, Forest Service, Southern Forest Experiment Station, 1985.

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3

Andrzej, Pękalski, a cura di. Diffusion processes: Experiment, theory, simulations : proceedings of the Vth Max Born Symposium, held at Kudowa, Poland, 1-4 June 1994. Berlin: Springer-Verlag, 1994.

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4

Max, Born Symposium (11th 1998 Warsaw Poland). Anomalous diffusion: From basics to applications : proceedings of the XIth Max Born Symposium held at Warsaw, Poland, 20-27 May, 1998. Berlin: Springer, 1999.

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5

Corsi, Daniele, e Cèlia Nadal Pasqual. Studi Iberici. Dialoghi dall’Italia. Venice: Fondazione Università Ca’ Foscari, 2021. http://dx.doi.org/10.30687/978-88-6969-505-6.

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Iberian Studies have developed in the last quarter of a century to the point of making one speak of a real Iberian Turn. Starting from the rejection of the classic scheme that places the two states (Portugal and Spain) as privileged agents of the representation of the Iberian space, the proposal of the Iberian Studies is to work on the system of historical exchanges and interferences that have shaped the cultural fabric of the peninsula, investigating both the points of connection as much as those of the fracture between its different realities (such as the Basque, Catalan and Galician ones, as well as the Castilian and Lusitanian ones). Accompanied by a “Reasoned Bibliography on Iberian Studies and Iberian Studies from Italy”, this volume examines the state of the art, with particular attention to the Italian context, in which these researches show a still unequal rooting and diffusion. A first section, dedicated to a general framework of the discipline and the exposition of theoretical issues and method problems, is followed by a second that presents critical contributions that address individual case studies. Born in part as a reaction to the so-called “crisis of Hispanism”, Iberian Studies offer themselves as an alternative to the traditional model of peninsular Hispanism, to its uninational and monolingual paradigm. They also place the emphasis on diversity and the relational aspect, looking with suspicion at every hegemonic design aimed at establishing a “centre” within a heterogeneous cultural landscape. Attentive to the phenomena of immigration and linguistic minorities, to the colonial past and relations with the Latin American world, but also to the themes of comparativism, translation, theory and the rethinking of criticism, Iberian Studies are a field in which not only debates about literature and the arts are included, but also about ideology.
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Berridge, D. Boron Diffusion: A Feasibility Study for the Diffusion of Boron from Boron Tribromide. AEA Technology Plc, 1986.

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Establishment, Building Research, a cura di. Preservation of building timbers by boron diffusion. Watford: Building Research Establishment, 1994.

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Pekalski, Andrzej. Diffusion Processes : Experiment, Theory, Simulations: Proceedings of the Vth Max Born Symposium Held at Kudowa, Poland, 1-4 June 1994. Springer, 2014.

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Collé-Bak, Nathalie. Wayfaring Images. A cura di Michael Davies e W. R. Owens. Oxford University Press, 2018. http://dx.doi.org/10.1093/oxfordhb/9780199581306.013.33.

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The Pilgrim’s Progress (1678; 1684) has been illustrated in many different forms and media, from its early days on the book market up until today. For over the last three centuries, John Bunyan’s allegory has inspired illustrators in numerous and varied ways, the images born of the text having materialized on book pages as well as on individual sheets, but also on canvas, photographic film, glass panes, and walls. Two-dimensional creations have also led the way to three-dimensional images, exhibited or performed in a variety of places and for a whole range of publics. This chapter contends that these sundry ‘illustrations’, by professional as well as amateur artists, have secured the diffusion and the popularity of the text through its temporal and geographical journeys, and across cultural boundaries.
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Pekalski, Andrzej. Diffusion Processes: Experiment, Theory, Simulations : Proceedings of the Vth Max Born Symposium, Held at Kudowa, Poland, 1-4 June 1994 (Lecture Notes in Physics). Springer-Verlag, 1994.

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Capitoli di libri sul tema "Boron diffusion"

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Wang, C. C., T. Y. Huang, Y. M. Sheu, Ray Duffy, Anco Heringa, N. E. B. Cowern, Peter B. Griffin e Carlos H. Diaz. "Boron Diffusion in Strained and Strain-Relaxed SiGe". In Simulation of Semiconductor Processes and Devices 2004, 41–44. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0624-2_10.

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Dybkov, V. I. "Diffusional Growth Kinetics of Boride Layers at the 13% Cr Steel Interface with Amorphous Boron". In Defect and Diffusion Forum, 183–88. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-35-3.183.

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Yang, Le, Jing Yang, Xin Fang, Yang Shi, Jingxiao Wang, Qinghao Ye, Jianhua Huang, Xiang Li e Chunjian Wu. "Boron Diffusion of the Silicon Solar Cell with BBr3". In Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1148–51. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_227.

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Bockstedte, M., Alexander Mattausch e Oleg Pankratov. "Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiC". In Materials Science Forum, 527–30. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.527.

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Heinz, Paul, Andreas Volek, Robert F. Singer, Markus Dinkel, Florian Pyczak, Matthias Göken, Michael Ott, Ernst Affeldt e Andreas Vossberg. "Diffusion Brazing of Single Crystalline Nickel Base Superalloys Using Boron Free Nickel Base Braze Alloys". In Diffusion in Solids and Liquids III, 294–99. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-51-5.294.

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Höfler, Alexander, Thomas Feudel, Arno Liegmann, Norbert Strecker, Wolfgang Fichtner, Yuji Kataoka, Kunihiro Suzuki e Nobuo Sasaki. "Precipitation phenomena and transient diffusion/activation during high concentration boron annealing". In Simulation of Semiconductor Devices and Processes, 448–51. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_108.

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Shauly, Eitan N., Richard Ghez e Yigal Komem. "Two-Dimensional Diffusion Characterization of Boron in Silicon using Reverse Modeling". In Simulation of Semiconductor Processes and Devices 2001, 384–87. Vienna: Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_88.

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Radamson, H. H., e J. Hållstedt. "Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition". In Defect and Diffusion Forum, 39–50. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-16-7.39.

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Moynagh, P. B., e P. J. Rosser. "Quantification of Diffusion Mechanisms of Boron, Phosphorus, Arsenic, and Antimony in Silicon". In ESSDERC ’89, 291–96. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_61.

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Baccus, B., e E. Vandenbossche. "Modeling High Concentration Boron Diffusion with Dynamic Clustering: Influence of the Initial Conditions". In Simulation of Semiconductor Devices and Processes, 133–36. Vienna: Springer Vienna, 1993. http://dx.doi.org/10.1007/978-3-7091-6657-4_32.

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Atti di convegni sul tema "Boron diffusion"

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Zin, Ngwe, e Andrew Blakers. "Boron diffusion induced shunts". In 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6185871.

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Edelman, L. A., K. S. Jones, R. G. Elliman, L. M. Rubin, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain e Yevgeniy V. Kondratenko. "Boron Diffusion in Amorphous Germanium". In ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology. AIP, 2008. http://dx.doi.org/10.1063/1.3033598.

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Smith, Gregory S., William A. Hamilton, Michael R. Fitzsimmons, Shenda M. Baker, Kevin M. Hubbard, Michael Nastasi, Juhani P. Hirvonen e Thomas G. Zocco. "Neutron reflectometry study of thermally induced boron diffusion in amorphous elemental boron". In San Diego '92, a cura di Charles F. Majkrzak e James L. Wood. SPIE, 1992. http://dx.doi.org/10.1117/12.130635.

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Vacik, J., V. Hnatowicz, J. Cervena, S. Posta, U. Köster, G. Pasold, Floyd D. McDaniel e Barney L. Doyle. "On Boron Diffusion in MgF[sub 2]". In APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: Twentieth International Conference. AIP, 2009. http://dx.doi.org/10.1063/1.3120169.

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Aoyama, Takayuki, Hiroshi Arimoto e Kei Horiuchi. "Boron Diffusion in SiO2 Involving High-Concentration Effects". In 2000 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2000. http://dx.doi.org/10.7567/ssdm.2000.a-5-8.

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6

Mauri, Aurelio, Luca Laurin, Francesco Montalenti e Augusto Benvenuti. "Atomistic approach for Boron Transient Enhanced Diffusion and clustering". In 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008). IEEE, 2008. http://dx.doi.org/10.1109/sispad.2008.4648304.

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7

Astorga, Elena Navarrete, Efrain Ochoa Martinez e Jose R. Ramos Barrado. "Low cost spray-coating boron diffusion on n-type silicon". In 2013 Spanish Conference on Electron Devices (CDE). IEEE, 2013. http://dx.doi.org/10.1109/cde.2013.6481408.

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8

Hong-Jyh Li, Hong-Jyh Li, T. A. Kirichenko, P. Kohli, S. K. Banerjee, E. Graetz, R. Tichy e P. Zeitzoff. "Boron retarded diffusion in the presence of indium or germanium". In Proceedings of the 2002 14th International Conference on Ion Implantation Technology. IEEE, 2002. http://dx.doi.org/10.1109/iit.2002.1257929.

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9

Dinkel, M. K., P. Heinz, F. Pyczak, A. Volek, M. Ott, E. Affeldt, A. Vossberg, M. G�ken e R. F. Singer. "New Boron and Silicon Free Single Crystal-Diffusion Brazing Alloys". In Superalloys. TMS, 2008. http://dx.doi.org/10.7449/2008/superalloys_2008_211_220.

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10

Min Yu, Xiao Zhang, Liming Ren, Huihui Ji, Kai Zhan, Ru Huang, Xing Zhang, Yangyuan Wang, Jinyu Zhang e H. Oka. "Simulating Enhanced Diffusion and Activation of Boron by Atomistic Model". In 2006 International Workshop on Junction Technology. IEEE, 2006. http://dx.doi.org/10.1109/iwjt.2006.220855.

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Rapporti di organizzazioni sul tema "Boron diffusion"

1

Agarwal, A., D. J. Eaglesham, H. J. Gossmann, L. Pelaz, S. B. Herner, D. C. Jacobson, T. E. Haynes e Y. E. Erokhin. Boron-enhanced diffusion of boron from ultralow-energy boron implantation. Office of Scientific and Technical Information (OSTI), maggio 1998. http://dx.doi.org/10.2172/650277.

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2

Chou, Y. T. Grain boundary diffusion in oriented Ni sub 3 Al bicrystals containing boron. Office of Scientific and Technical Information (OSTI), dicembre 1990. http://dx.doi.org/10.2172/5879343.

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3

Chou, Y. T. Grain boundary diffusion in oriented Ni{sub 3}Al bicrystals containing boron. Final technical report, September 1, 1986--August 31, 1990. Office of Scientific and Technical Information (OSTI), dicembre 1990. http://dx.doi.org/10.2172/10125642.

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4

Williams, Lonnie H., e Joe K. Mauldin. Integrated Protection Against Lyctid Beetle Infestations Part II. - Laboratory Dip-Diffusion Treatment of Unseasoned Banak (Virola spp.) Lumber with Boron Compounds. New Orleans, LA: U.S. Department of Agriculture, Forest Service, Southern Forest Experiment Station, 1985. http://dx.doi.org/10.2737/so-rn-313.

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