Bibliographies thématiques / Zincblend / Articles de revues

Articles de revues sur le sujet « Zincblend »

Pour voir les autres types de publications sur ce sujet consultez le lien suivant : Zincblend.
Auteur : Grafiati
Publié le 11 mars 2023

Créez une référence correcte selon les styles APA, MLA, Chicago, Harvard et plusieurs autres

Choisissez une source :

Consultez les 50 meilleurs articles de revues pour votre recherche sur le sujet « Zincblend ».

À côté de chaque source dans la liste de références il y a un bouton « Ajouter à la bibliographie ». Cliquez sur ce bouton, et nous générerons automatiquement la référence bibliographique pour la source choisie selon votre style de citation préféré : APA, MLA, Harvard, Vancouver, Chicago, etc.

Vous pouvez aussi télécharger le texte intégral de la publication scolaire au format pdf et consulter son résumé en ligne lorsque ces informations sont inclues dans les métadonnées.

Parcourez les articles de revues sur diverses disciplines et organisez correctement votre bibliographie.

1

Yasuda, Hidehiro, Kimihisa Matsumoto, Tatsuya Furukawa, Masaki Imamura, Noriko Nitta et Hirotaro Mori. « Structural Stabilities in GaAs Nanocrystals Grown on Si (111) Surface ». Materials Science Forum 654-656 (juin 2010) : 1772–75. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1772.

Texte intégral
Résumé :
Structural stabilities in GaAs nanocrystals grown on the Si (111) substrate have been studied by transmission electron microscopy in order to see the structure and growth mechanism. The GaAs nanocrystals grown epitaxially on the Si (111) surface kept at 573 K have thin shapes consisting of a flat surface which is parallel to the Si (111) surface. The crystalline structure of the initial growth layer, below approximately 5 nm in thickness is zincblend, but with increasing thickness the structure changes to the wurtzite structure by formation of orderly-arranged stacking faults. The small difference in the driving force between wurtzite and the zincblende structure could lead to a situation where the kinetic rate of nucleus formation is higher for the wurtzite structure than for the zincblende structure. It would highly increase the probability that the wurtzite structure is formed as a non-equilibrium state.
Styles APA, Harvard, Vancouver, ISO, etc.
2

Mousavi, S. Javad. « The effect of etchants on surface of CdTe single crystal ». JOURNAL OF ADVANCES IN PHYSICS 12, no 1 (30 juillet 2016) : 4145–47. http://dx.doi.org/10.24297/jap.v12i1.166.

Texte intégral
Résumé :
Cadmium telluride crystals (CdTe) have been grown by the sublimation method. The crystal polarity of the CdTe with the zincblend structure has been studied. Two different crystallographic defect and etch pits are revealed on the (111) Cd and  Te surfaces by different etchant.
Styles APA, Harvard, Vancouver, ISO, etc.
3

Mahmood, A., et L. Enrique Sansores. « Band structure and bulk modulus calculations of germanium carbide ». Journal of Materials Research 20, no 5 (mai 2005) : 1101–6. http://dx.doi.org/10.1557/jmr.2005.0172.

Texte intégral
Résumé :
Band-structure calculations of germanium carbide (GeC) show that it is a new indirect wide band gap semiconducting material, which crystallizes in both cubic and hexagonal phases. Through the density functional and total-energy technique in the generalized gradient approximation, the two polytypes 3C and 2H of GeC were studied. According to our calculations, it is a hard material with a percentage of covalency of about 80–90%. Important energy gaps were determined. The bulk modulus, density of states, and charge density were calculated. For the bulk modulus calculations, Murnaghan’s equation of state was used under elastic deformation to measure hardness. Our calculations showed that this semiconducting material crystallizes in zincblend (Eg = 1.76 eV) and wurtzite (Eg = 2.5 eV) structures.
Styles APA, Harvard, Vancouver, ISO, etc.
4

Zhao, Q. H., J. D. Parsons, H. S. Chen, A. K. Chaddha, J. Wu, G. B. Kruaval et D. Downham. « Single crystal titanium carbide, epitaxially grown on zincblend and wurtzite structures of silicon carbide ». Materials Research Bulletin 30, no 6 (juin 1995) : 761–69. http://dx.doi.org/10.1016/0025-5408(95)00056-9.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
5

Gupta, Monika, Jaya Shrivastava, Vidhika Sharma, Anjana Solanki, Ananad Pal Singh, V. R. Satsangi, S. Dass et Rohit Shrivastav. « Enhanced Photoelectrochemical Activity of 120 MeV Ag9+ Irradiated Nanostructured Thin Films of ZnO for Solar-Hydrogen Generation via Splitting of Water ». Advanced Materials Research 67 (avril 2009) : 95–102. http://dx.doi.org/10.4028/www.scientific.net/amr.67.95.

Texte intégral
Résumé :
This paper deals with a study on 120 MeV Ag9+ irradiated thin films of zinc oxide (ZnO), obtained by sol-gel – spin coating onto TCO glass plates. Films irradiated at fluence 5×1011, 3×1012, 5×1012 and 2×1013 ions cm-2, were optically characterized for band gap determination. XRD analysis revealed polytypism as both wurtzite and zincblend phases co-evolved. Scherrer’s calculations indicated grain size in nanodimensions, while SEM analysis indicated smooth surface morphology of films. Flat band potentials and donor densities were evaluated by Mott-schottky calculations. For PEC studies, thin films of ZnO were employed as working electrode in conjunction with Platinum Counter electrode, Saturated Calomel Reference electrode, 13 pH aqueous solution of NaOH as electrolyte and 150W Xenon Arc light source for illumination. A significant gain in photoelectrochemical current was recorded on SHI irradiation. The films irradiated at fluence 3×1012 ions cm-2 yielded maximum increase in photocurrent that was nearly five times compared to unirradiated samples.
Styles APA, Harvard, Vancouver, ISO, etc.
6

Bhattacharya, P., T. K. Sharma, S. Singh, A. Ingale et L. M. Kukreja. « Observation of zincblend phase in InN thin films grown on sapphire by nitrogen plasma-assisted pulsed laser deposition ». Journal of Crystal Growth 236, no 1-3 (mars 2002) : 5–9. http://dx.doi.org/10.1016/s0022-0248(01)02083-8.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
7

Edossa, Teshome Gerbaba, et Menberu Woldemariam. « Electronic, structural and optical properties of zincblend and wurtizite cadmium selenide (CdSe) using density functional theory and hubbard correction ». Physics and Chemistry of Solid State 22, no 1 (25 janvier 2021) : 16–23. http://dx.doi.org/10.15330/pcss.22.1.16-23.

Texte intégral
Résumé :
Zinc blend (zb) and wurtizite (wz) structure of cadmium selenide (CdSe) is determined using density-functional theory within local density approximation (LDA), generalized gradient approximation (GGA), Hubbard-correction (GGA+U) and Hybrid functional approximation (PBE0 or HSE06). The first principle pseudopotential plane wave is used and the relaxed atomic position for the CdSe in zb and wz structure was obtained by using total energy and force minimization method following the Hellmann Feynman approach. The convergence test of total energy with respect to cutoff energy and k-point sampling is performed . The equilibrium lattice constant and unit cell volume of CdSe in both phases are calculated and the obtained value is compared` with experimental values. In addition the band gap of CdSe is analyzed using DFT within LDA, GGA, DFT+U and PBE0 to approximate the unknown exchange correlation functional. The band gap values obtained using LDA and GGA are severally under estimated due to their poor approximation of exchange-correlation potential. This problem was improved by using projector augmented-wave pseudopotential within Hubbard-correction (GGA+U) and the hybrid functional approximation. Optical properties: complex and real parts of dielectric function, energy loss spectrum and absorption coefficient of CdSe in both ZB and WZ phase were studied.
Styles APA, Harvard, Vancouver, ISO, etc.
8

Espitia R., Miguel Jose, John Hernan Diaz Forero et Octavio Jose Salcedo Parra. « Computational calculation of the relative phase of the MnN compound ». International Journal of Mathematical Analysis 11, no 22 (2017) : 1081–88. http://dx.doi.org/10.12988/ijma.2017.711144.

Texte intégral
Résumé :
In this work computational calculations ab initio were performed to determine the relative stability, the structural and electronic properties of manganese nitride MnN. The calculations were made in the structures NaCl, Zincblenda, CsCl and wurtzita; using the method increased plane waves and linearized in the full potential version (FP-LAPW), within the formalism of the density functional theory (DFT). We find that the most stable crystallization phase is Zincblende and that the compound can pass to the NaCl structure by applying an external pressure. From the DOS state density, it is found that the manganese nitride has a metallic behavior due to the Mn-d and N-p orbitals that cross the Fermi level; MnN possesses magnetic properties with a magnetic moment of 2.53 µβ/cell.
Styles APA, Harvard, Vancouver, ISO, etc.
9

Sink, Joseph, et Craig Pryor. « Empirical tight-binding parameters for wurtzite group III–V(non-nitride) and IV materials ». AIP Advances 13, no 2 (1 février 2023) : 025354. http://dx.doi.org/10.1063/5.0129007.

Texte intégral
Résumé :
Suitable tight-binding models for wurtzite III–V (non-nitride) and group-V materials are presently missing in the literature. Many commonly used nearest neighbor tight-binding models for cubic-zincblende semiconductors result in highly inaccurate band structures when transferred to hexagonal polytypes. Wurtzite parameters would be of use in modeling nanowires that primarily condense into either wurtzite or zincblende crystal phases. Nanowire growth has seen significant development over the last decade, and polytypic heterostructures are now able to be fabricated. We have produced a set of spds* tight-binding parameters to be used in the hexagonal-wurtzite crystal phase for non-nitride III–V and group V semiconductors. We confine our parameter space to remain in the vicinity of a well-established zincblende parameter set to ensure semi-transferability between the wurtzite and zincblende polytypes. Our wurtzite parameters, when combined with the existing zincblende parameters, enable modeling electronic structures of heterostructures containing both the wurtzite and zincblende crystal phases.
Styles APA, Harvard, Vancouver, ISO, etc.
10

Farahmand, Maziar, et Kevin F. Brennan. « Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs ». MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000) : 633–39. http://dx.doi.org/10.1557/s1092578300004865.

Texte intégral
Résumé :
The output characteristics, cutoff frequency, breakdown voltage and the transconductance of wurtzite and zincblende phase GaN MESFETs have been calculated using a self-consistent, full band Monte Carlo simulation. It is found that the calculated breakdown voltage for the wurtzite device is considerably higher than that calculated for a comparable GaN zincblende phase device. The zincblende device is calculated to have a higher transconductance and cutoff frequency than the wurtzite device. The higher breakdown voltage of the wurtzite phase device is attributed to the higher density of electronic states for this phase compared to the zincblende phase. The higher cutoff frequency and transconductance of the zincblende phase GaN device is attributed to more appreciable electron velocity overshoot for this phase compared to that for the wurtzite phase. The maximum cutoff frequency and transconductance of a 0.1 μm gate-length zincblende GaN MESFET are calculated to be 220GHz and 210 mS/mm, respectively. The corresponding quantities for the wurtzite GaN device are calculated to be 160GHz and 158 mS/mm.
Styles APA, Harvard, Vancouver, ISO, etc.
11

Hernández-Cocoletzi, Heribert, Gregorio H. Cocoletzi, J. F. Rivas-Silva, A. Flores et Noboru Takeuchi. « Density Functional Study of the Structural Properties of Copper Iodide : LDA vs GGA Calculations ». Journal of Nano Research 5 (février 2009) : 25–30. http://dx.doi.org/10.4028/www.scientific.net/jnanor.5.25.

Texte intégral
Résumé :
We have performed first principles total energy calculations to investigate the structural properties of copper iodide (CuI) in its sodium chloride, cesium chloride, zincblende and wurtzite structures. Calculations are done using the density functional theory. We employ the full potential linearized augmented plane wave method as implemented in the wien2k code. The exchange and correlation potential energies are treated in the generalized gradient approximation (GGA), and the local density approximation (LDA). Optical absorption experiments and x-ray diffraction measurements have shown that zincblende is the ground state of CuI. Our calculations find that in the GGA formalism wurtzite and zincblende have similar total energies, while in the LDA formalism the lowest minimum corresponds to zincblende. Results show that the energy difference between the wurtzite and the zincblende structures, as calculated within the GGA formalism is 2 meV, and within the LDA formalism, is 31 meV. These results may suggest a coexistence of both wurtzite and zincblende structures in the ground state of CuI. Structural parameters are correctly reproduced by the GGA calculations. We obtain that under the application of external pressure the atomic configuration may transform into the NaCl structure. At higher pressures it is possible to have a phase transition to the CsCl geometry.
Styles APA, Harvard, Vancouver, ISO, etc.
12

AHMED, B., et B. I. SHARMA. « STRUCTURAL AND ELECTRONIC PROPERTIES OF AlN IN ROCKSALT, ZINC BLENDE AND WURTZITE PHASE : A DFT STUDY ». Digest Journal of Nanomaterials and Biostructures 16, no 1 (janvier 2021) : 125–33. http://dx.doi.org/10.15251/djnb.2021.161.125.

Texte intégral
Résumé :
Aluminium Nitride (AlN) is a wide bandgap group III-V compound, and AlN exhibits in three different lattice structures. In this work, we investigate the different structural and electronic properties of AlN in rocksalt (RS), zincblende (ZB) and wurtzite (WZ) phase in the light of Density Functional Theory (DFT) with modified Becke-Johnson generalizedgradient approximation (mBJ-GGA) as exchange-correlation potential. The structural lattice parameters and energy bandgap obtained in this calculation are in agreement with the available experimental values. The structural calculation shows that the most stable phase is the wurtzite phase, and the metastable phase is the zincblende phase. The bandgap for the AlN in rocksalt, zincblende and wurtzite phase are found to be 6.33 eV, 4.7 eV, and 5.6 eV respectively. The bandgaps are indirect corresponding to the rocksalt and zincblende phase and direct in case of the wurtzite phase.
Styles APA, Harvard, Vancouver, ISO, etc.
13

Fong, C. Y., M. C. Qian, Kai Liu, L. H. Yang et J. E. Pask. « Design of Spintronic Materials with Simple Structures ». Journal of Nanoscience and Nanotechnology 8, no 7 (1 juillet 2008) : 3652–60. http://dx.doi.org/10.1166/jnn.2008.18331.

Texte intégral
Résumé :
A brief comparison of conventional electronics and spintronics is given. The key features of half metallic binary compounds with the zincblende structure are presented, using MnAs as an example. We discuss the interactions responsible for the half metallic properties. Special properties of superlattices and a digital ferromagnetic heterostructure incorporating zincblende half metals are also discussed.
Styles APA, Harvard, Vancouver, ISO, etc.
14

Saleem, Samra, Ammara Maryam, Kaneez Fatima, Hadia Noor, Fatima Javed et Muhammad Asghar. « Phase Control Growth of InAs Nanowires by Using Bi Surfactant ». Coatings 12, no 2 (15 février 2022) : 250. http://dx.doi.org/10.3390/coatings12020250.

Texte intégral
Résumé :
To realize practical applications of nanowire-based devices, it is critical, yet challenging, to control crystal structure growth of III-V semiconductor nanowires. Here, we demonstrate that controlled wurtzite and zincblende phases of InAs nanowires can be fabricated using bismuth (Bi) as a surfactant. For this purpose, catalyst free selective area epitaxial growth of InAs nanowires was performed using molecular beam epitaxy (MBE). During the growth, Bi was used which may act as a wetting agent influencing the surface energy at growth plane ends, promoting wurtzite crystal phase growth. For a demonstration, wurtzite and zincblende InAs nanowires were obtained with and without using Bi-flux. Photoluminescence spectroscopy (PL) analysis of the nanowires indicates a strong correlation between wurtzite phase and the Bi-flux. It is observed that the bandgap energy of wurtzite and zincblende nanowires are ∼0.50 eV and ∼0.42 eV, respectively, and agree well with theoretical estimated bandgap of corresponding InAs crystal phases. A blue shift in PL emission peak energy was found with decreasing nanowire diameter. The controlled wurtzite and zincblende crystal phase and its associated heterostructure growth of InAs nanowires on Si may open up new opportunities in bandgap engineering and related device applications integrated on Si. Furthermore, this work also illustrates that Bi as a surfactant could play a dynamic role in the growth mechanism of III-V compound semiconductors.
Styles APA, Harvard, Vancouver, ISO, etc.
15

Liang, Xiao Lu, et Xian Hua Wei. « Synthesis and Characterization of Cu2FeSnS4 Semiconductor Nanocrystals with Zincblende Structure ». Advanced Materials Research 512-515 (mai 2012) : 2019–22. http://dx.doi.org/10.4028/www.scientific.net/amr.512-515.2019.

Texte intégral
Résumé :
Cu2FeSnS4semiconductor nanocrystals with zincblende structure have been successfully synthesized by a hot-injection approach. Cu+, Fe2+, and Sn4+cations have a random distribution in the zincblende unit cell, and the occupancy possibilities are 1/2, 1/4 and 1/4, respectively. Those nanocrystals were characterized by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), energy dispersive spectroscopy (EDS), and UV-Vis-NIR absorption spectroscopy. The Cu2FeSnS4 nanocrystals have an average size of 7.5 nm and a band gap of 0.92 eV.
Styles APA, Harvard, Vancouver, ISO, etc.
16

Biermanns, Andreas, Steffen Breuer, Anton Davydok, Lutz Geelhaar et Ullrich Pietsch. « Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire X-ray diffraction ». Journal of Applied Crystallography 45, no 2 (15 mars 2012) : 239–44. http://dx.doi.org/10.1107/s0021889812003007.

Texte intégral
Résumé :
The structural composition, phase arrangement and residual strain of individual GaAs nanowires (NWs) grown on Si(111) have been investigated using NW-resolved high-resolution X-ray diffraction employing a focused synchrotron beam. It is found that even neighbouring NWs grown on the same sample under the same growth conditions differ significantly in their phase structure, most of them exhibiting small wurtzite segments embedded between larger zincblende sections. Moreover, using structurally sensitive Bragg reflections, residual strain is observed in the zincblende sections of the NWs, likely caused by an incomplete relaxation at the substrate interface.
Styles APA, Harvard, Vancouver, ISO, etc.
17

JHA, PRAFULLA K., SANJAY D. GUPTA, SANJEEV K. GUPTA et DAVOR KIRIN. « STRUCTURAL AND ELECTRONIC PROPERTIES AND PHONONS OF PLATINUM NITRIDES BY DENSITY FUNCTIONAL THEORY ». International Journal of Modern Physics B 25, no 11 (30 avril 2011) : 1543–51. http://dx.doi.org/10.1142/s0217979211100382.

Texte intégral
Résumé :
Using first principles calculations, we provide here a unified study of structural and electronic properties along with frequency of phonon modes at some high-symmetry points of the Brillouin zone for the noble metal nitride platinum nitride (PtN) by using PWSCF code. Our calculations are performed for two phases viz. zincblende and rocksalt. The present study predicts the zincblende structure as the most probable crystal structure out of two, besides it being metallic. The calculated structural and electronic properties and zone centre phonon modes are in good agreement with the experimental and other calculated data.
Styles APA, Harvard, Vancouver, ISO, etc.
18

Gundimeda, Abhiram, Martin Frentrup, Simon M. Fairclough, Menno J. Kappers, David J. Wallis et Rachel A. Oliver. « Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers ». Journal of Applied Physics 131, no 11 (21 mars 2022) : 115703. http://dx.doi.org/10.1063/5.0077186.

Texte intégral
Résumé :
The influence of AlGaN nucleation layers on zincblende GaN epilayers was studied to investigate the formation of wurtzite phase inclusions in the epilayer. GaN epilayers grown on AlGaN nucleation layers with varying aluminum contents suffer from the increasing presence of wurtzite inclusions as the aluminum content of the nucleation layer increases. High-resolution transmission electron microscopy along with four-dimensional scanning transmission electron microscopy is used to investigate the origin of the wurtzite inclusions in the nucleation layer and at the GaN/AlGaN interface. It was observed that a GaN nucleation layer and an Al0.95Ga0.05N nucleation layer grew in the zincblende and wurtzite phase, respectively. These phases were then adopted by the overgrown GaN epilayers. For a GaN epilayer on an Al0.29Ga0.71N nucleation layer, wurtzite inclusions tend to form at the GaN/ Al0.29Ga0.71N interface due to strong {111}-type faceting observed in the zincblende nucleation layer. This strong faceting is correlated with an enrichment of aluminum in the upper part of the nucleation layer, as observed in energy dispersive x-ray spectroscopy, which may influence the kinetics or thermodynamics controlling the surface morphology.
Styles APA, Harvard, Vancouver, ISO, etc.
19

Liang, Xiaolu, Xianhua Wei et Daocheng Pan. « Dilute Magnetic SemiconductorCu2FeSnS4Nanocrystals with a Novel Zincblende Structure ». Journal of Nanomaterials 2012 (2012) : 1–5. http://dx.doi.org/10.1155/2012/708648.

Texte intégral
Résumé :
Diluted magnetic semiconductorCu2FeSnS4nanocrystals with a novel zincblende structure have been successfully synthesized by a hot-injection approach. Cu+, Fe2+, and Sn4+ions occupy the same position in the zincblende unit cell, and their occupancy possibilities are 1/2, 1/4, and 1/4, respectively. The nanocrystals were characterized by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), energy-dispersive spectroscopy (EDS), and UV-vis-NIR absorption spectroscopy. The nanocrystals have an average size of 7.5 nm and a band gap of 1.1 eV and show a weak ferromagnetic behavior at low temperature.
Styles APA, Harvard, Vancouver, ISO, etc.
20

ARABSHAHI, H. « COMPARISON OF HIGH FIELD ELECTRON TRANSPORT PROPERTIES IN WURTZITE AND ZINCBLENDE PHASE GaN AT ROOM TEMPERATURE ». Modern Physics Letters B 21, no 04 (10 février 2007) : 199–206. http://dx.doi.org/10.1142/s0217984907012669.

Texte intégral
Résumé :
An ensemble Monte Carlo simulation has been used to model bulk electron transport at 300 K for both the natural wurtzite and the zincblende lattice phases of GaN . Electronic states within the conduction band are represented by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone, but for zincblende GaN , the simpler spherical parabolic band approximation has also been tested, for comparison. In the case of wurtzite GaN , transport has been modeled with an electric field applied both parallel and perpendicular to the (0001) c-axis. The steady state velocity-field characteristics are in fair agreement with other recent calculations.
Styles APA, Harvard, Vancouver, ISO, etc.
21

Lee, Sanghwa, Yuri Sohn, Chinkyo Kim, Dong Ryeol Lee et Hyun-Hwi Lee. « Nanostructural analysis of GaN tripods and hexapods grown onc-plane sapphire ». Journal of Applied Crystallography 43, no 6 (13 octobre 2010) : 1300–1304. http://dx.doi.org/10.1107/s0021889810036472.

Texte intégral
Résumé :
The crystallographic and structural characteristics of GaN tripods and hexapods grown onc-plane sapphire substrates were investigated using synchrotron X-ray scattering and microscopic analysis. The core structure of a GaN hexapod is revealed to be in the zincblende phase with an inversion domain, and a refined crystallographic analysis of tripods and hexapods with synchrotron X-ray scattering shows the existence of the zincblende phase in wurtzite-based protruding nanorods. The atomistic model combined with this crystallographic analysis reveals that the core size of a hexapod is much smaller than the diameters of the protruding nanorods. This refined structural analysis can be utilized in tailoring the opto-electronic characteristics of GaN multipods.
Styles APA, Harvard, Vancouver, ISO, etc.
22

Kim, Young-Geun, Ho-Jun Song, Seok-Kyun Oh, Wha-Tek Kim, Kwang-Ho Park, Duck-Tae Kim, Moon-Seog Jin, Chang-Dae Kim et Chang-Sun Yoon. « Photoluminescence Spectral Lines Identification in Ho3+-, Er3+-, and Tm3+-doped MgxZn1–xSe Single Crystals ». Journal of Materials Research 14, no 4 (avril 1999) : 1227–34. http://dx.doi.org/10.1557/jmr.1999.0167.

Texte intégral
Résumé :
MgxZn1-xSi: Ho3+, MgxZn1-xSe: Er3+, and MgxZn1-xSe: Tm3+ single crystals were grown by the closed-tube sublimation method. The single crystals crystallized into a zincblende structure at the composition x = 0.11 and a wurtzite structure at the composition x = 0.25, 0.32, and 0.41. The trivalent ions (Ho3+, Er3+, and Tm3+) of the rare-earth elements Ho, Er, and Tm site in Td and C3v symmetries in the single crystals with zincblende and wurtzite structures, respectively. Sharp emission peaks appeared in the photoluminescence spectra of the single crystals. These emission peaks are identified to originate from the radiation recombination between the energy levels of the trivalent ions sited in Td and C3v symmetries.
Styles APA, Harvard, Vancouver, ISO, etc.
23

HIRAI, T., K. EDAMATSU, T. ITOH, Y. HARADA et S. HASHIMOTO. « EXCITONS IN COLLOIDAL CuI PARTICLES DISPERSED IN A KI CRYSTAL ». International Journal of Modern Physics B 15, no 28n30 (10 décembre 2001) : 3789–92. http://dx.doi.org/10.1142/s0217979201008676.

Texte intégral
Résumé :
We have investigated the luminescence spectra of colloidal CuI particles dispersed in a KI crystal under low- and high-density excitations of the CuI particles at low temperatures. Under the low-density excitation, we have observed the luminescence of both confined and bulk-like exciton transitions in the CuI particles with zincblende and two kinds of hexagonal structures. In the bulk-like particles with the zincblende structure, the emission line of bound excitons with small binding energy of ~5 meV has been recognized. The biexciton luminescence has been observed under the high-density excitation. We discuss the origins of the various excitonic states observed in the CuI particles dispersed in the KI crystal.
Styles APA, Harvard, Vancouver, ISO, etc.
24

Böttcher, Rolf, Michael Lorenz, Andreas Pöppl, Daniel Spemann et Marius Grundmann. « Local zincblende coordination in heteroepitaxial wurtzite Zn1−xMgxO:Mn thin films with 0.01 ≤ x ≤ 0.04 identified by electron paramagnetic resonance ». Journal of Materials Chemistry C 3, no 45 (2015) : 11918–29. http://dx.doi.org/10.1039/c5tc02720a.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
25

Liu, Maochang, Bin Wang, Yiqun Zheng, Fei Xue, Yubin Chen et Liejin Guo. « Transformation of zincblende nanoparticles into wurtzite microrods by a dissolution–regrowth process : an intergrowth homojunction with enhanced photocatalytic activity ». Catalysis Science & ; Technology 6, no 10 (2016) : 3371–77. http://dx.doi.org/10.1039/c6cy00298f.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
26

Wolverson, D., L. C. Smith, C. Bradford, B. C. Cavenett et K. A. Prior. « Micro-Raman Studies of Zincblende MgS ». Journal of the Korean Physical Society 53, no 9(5) (15 novembre 2008) : 2779–81. http://dx.doi.org/10.3938/jkps.53.2779.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
27

Bertrand, Guillaume H. V., Anatolii Polovitsyn, Sotirios Christodoulou, Ali Hossain Khan et Iwan Moreels. « Shape control of zincblende CdSe nanoplatelets ». Chemical Communications 52, no 80 (2016) : 11975–78. http://dx.doi.org/10.1039/c6cc05705e.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
28

Kuo, Yen-Kuang, Han-Yi Chu, Sheng-Horng Yen, Bo-Ting Liou et Mei-Ling Chen. « Bowing parameter of zincblende InxGa1−xN ». Optics Communications 280, no 1 (décembre 2007) : 153–56. http://dx.doi.org/10.1016/j.optcom.2007.07.058.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
29

Erdakos, Garnet B., et Shang-Fen Ren. « Poisson's ratios in diamond/zincblende crystals ». Journal of Physics and Chemistry of Solids 59, no 1 (janvier 1998) : 21–26. http://dx.doi.org/10.1016/s0022-3697(97)00120-0.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
30

Schneider, J. W., Hp Baumeler, H. Keller, R. F. Kiefl, W. Kündig, W. Odermatt, B. D. Patterson et al. « Muonium states in zincblende-structured compounds ». Hyperfine Interactions 32, no 1-4 (décembre 1986) : 607–12. http://dx.doi.org/10.1007/bf02394963.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
31

OHKE, Shigeaki, Yoshio CHO et Takahiro OKABE. « Electro-optic effect in zincblende crystals. » Review of Laser Engineering 15, no 1 (1987) : 2–11. http://dx.doi.org/10.2184/lsj.15.2.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
32

Rodrigues, C. G., J. R. L. Fernandez, J. R. Leite, V. A. Chitta, V. N. Freire, A. R. Vasconcellos et R. Luzzi. « Hole mobility in zincblende c–GaN ». Journal of Applied Physics 95, no 9 (mai 2004) : 4914–17. http://dx.doi.org/10.1063/1.1690865.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
33

Han, J., S. M. Durbin, R. L. Gunshor, M. Kobayashi, D. R. Menke, N. Pelekanos, M. Hagerott, A. V. Nurmikko, Y. Nakamura et N. Otsuka. « Quantum wells with zincblende MnTe barriers ». Journal of Crystal Growth 111, no 1-4 (mai 1991) : 767–71. http://dx.doi.org/10.1016/0022-0248(91)91078-o.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
34

Konczewicz, L., P. Bigenwald, T. Cloitre, M. Chibane, R. Ricou, P. Testud, O. Briot et R. L. Aulombard. « MOVPE growth of zincblende magnesium sulphide ». Journal of Crystal Growth 159, no 1-4 (février 1996) : 117–20. http://dx.doi.org/10.1016/0022-0248(95)00832-2.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
35

Maliakkal, Carina B., Daniel Jacobsson, Marcus Tornberg et Kimberly A. Dick. « Post-nucleation evolution of the liquid–solid interface in nanowire growth ». Nanotechnology 33, no 10 (17 décembre 2021) : 105607. http://dx.doi.org/10.1088/1361-6528/ac3e8d.

Texte intégral
Résumé :
Abstract We study using in situ transmission electron microscopy the birth of GaAs nanowires from liquid Au–Ga catalysts on amorphous substrates. Lattice-resolved observations of the starting stages of growth are reported here for the first time. It reveals how the initial nanostructure evolves into a nanowire growing in a zincblende 〈111〉 or the equivalent wurtzite〈0001〉 direction. This growth direction(s) is what is typically observed in most III–V and II–VI nanowires. However, the reason for this preferential nanowire growth along this direction is still a dilemma. Based on the videos recorded shortly after the nucleation of nanowires, we argue that the lower catalyst droplet-nanowire interface energy of the {111} facet when zincblende (or the equivalent {0001} facet in wurtzite) is the reason for this direction selectivity in nanowires.
Styles APA, Harvard, Vancouver, ISO, etc.
36

ARABSHAHI, H., et A. A. MOWLAVI. « LOW-FIELD ELECTRON TRANSPORT PROPERTIES IN ZINCBLENDE AND WURTZITE GaN STRUCTURES USING AN ITERATION MODEL FOR SOLVING BOLTZMANN EQUATION ». Modern Physics Letters B 23, no 10 (20 avril 2009) : 1359–66. http://dx.doi.org/10.1142/s021798490901948x.

Texte intégral
Résumé :
An iteration calculation has been carried out to study electron transport properties in zincblende and wurtzite GaN materials. The two-mode nature of the polar optic phonons is considered jointly with deformation potential acoustic, piezoelectric, ionized impurity scattering. Band non-parabolicity, admixture of p functions, arbitrary degeneracy of the electron distribution, and the screening effects of free carriers on the scattering probabilities are incorporated. Electron drift mobility in both zincblende and wurtzite GaN crystal structures are calculated for different temperature and doping dependencies. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low temperature value of electron mobilty increases significantly with increasing doping concentration. The agreement of iterative results with the available experimental data is found to be satisfactory.
Styles APA, Harvard, Vancouver, ISO, etc.
37

IBRIR, Miloud. « Elastic, mechanical and thermodynamic properties of zinc blende III-X (X= As, Sb) : ab-initio calculations ». International Journal of Energetica 4, no 1 (30 juin 2019) : 23. http://dx.doi.org/10.47238/ijeca.v4i1.90.

Texte intégral
Résumé :
In this work, density functional theory plane-wave full potential method, with local density approximation (LDA) are used to investigate the structural, mechanical and thermodynamic properties of of zincblende III-X ( X= As, Sb) compends. Comparison of the calculated equilibrium lattice constants and experimental data shows very good agreement. The elastic constants were determined from a linear fit of the calculated stress-strain function according to Hooke’s law. From the elastic constants, the bulk modulus B, shear modulus G, Young’s modulus E, Poisson’s ratio σ, anisotropy factor A, the ratio B/G and the hardness parameter H for zincblende III-X ( X= As, Sb) compound are obtained. Our calculated elastic constants indicate that the ground state structure of III-X ( X= As, Sb) is mechanically stable. The sound velocities and Debye temperature are also predicted from elastic constants.
Styles APA, Harvard, Vancouver, ISO, etc.
38

Daoud, Salah, Abdelhalim Bencheikh et Laarbi Belagraa. « Quasi-linear correlation between high-frequency and static die-lectric constants in II-VI and III-V semiconductors ». International Journal of Physical Research 5, no 1 (15 décembre 2016) : 4. http://dx.doi.org/10.14419/ijpr.v5i1.6961.

Texte intégral
Résumé :
A quantitative form of the linear correlation between the high-frequency and static dielectric constants in ANB8-N (N = 2, 3) tetrahedrally coordinated semiconductor materials, and also in I-VII group alkali halides was studied. So, a quasi-linear relationship was found between the high-frequency and the static dielectric constants for some selected II-VI (ZnS, ZnSe, ZnTe and CdTe) and III-V (AlP, AlAs, AlSb,….etc) cubic zincblende type materials, in the other side a weak uphill linear relationship has been found in the case of I-VII (LiF, NaF, LiCl,….etc) group alkali halides compounds. In the case of II-VI and III-V cubic zincblende semiconductors, the linear regression is established with a correlation coefficient ( ) of about 0.98. The significance of the linear regression is given as the probability P <0.0001 of the null hypothesis.
Styles APA, Harvard, Vancouver, ISO, etc.
39

XU WEN-LAN et ZHENG ZHAO-BO. « VIBRATION PROPERTIES OF IMPURITIES IN ZINCBLENDE STRUCTURE ». Acta Physica Sinica 38, no 2 (1989) : 290. http://dx.doi.org/10.7498/aps.38.290.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
40

Ghong, T. H., Y. W. Jung, J. J. Yoon, Y. D. Kim, H. J. Kim et Y. C. Chang. « Dielectric Function Study on Zincblende CdSe Film ». Journal of the Korean Physical Society 53, no 1 (15 juillet 2008) : 367–70. http://dx.doi.org/10.3938/jkps.53.367.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
41

Fornasini, P., R. Grisenti et N. Abd el All. « EXAFS parameters and VDOS in zincblende structures ». Journal of Physics : Conference Series 430 (22 avril 2013) : 012004. http://dx.doi.org/10.1088/1742-6596/430/1/012004.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
42

Uno, Ryosei, Haruo Ozawa, Jun Ishigaki et Ken Yukino. « Electron Distribution in Some Zincblende-Type Crystals ». Zeitschrift für Naturforschung A 48, no 1-2 (1 février 1993) : 38–40. http://dx.doi.org/10.1515/zna-1993-1-210.

Texte intégral
Résumé :
Abstract The elctron density distribution in crystalline ZnSe and ZnTe has been measured by X-ray diffraction on powder samples and is compared with the results for other zincblende-type crystals. It is shown that the data for these two compounds corroborate the linear dependence on the bond charge that has been found earlier for the effective atomic charge from infrared reflection measurements, the optical dielectric constant and the ionicity estimated from pseudopotential band theory.
Styles APA, Harvard, Vancouver, ISO, etc.
43

Peng, Chen, et Takamura K. « Magnetic and electrical properties of zincblende CrAs ». Chinese Physics B 17, no 6 (juin 2008) : 2204–7. http://dx.doi.org/10.1088/1674-1056/17/6/044.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
44

Ahmadian, F. « Half-metallic ferromagnetism in the zincblende TiTe ». Solid State Communications 151, no 24 (décembre 2011) : 1927–31. http://dx.doi.org/10.1016/j.ssc.2011.09.018.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
45

Caetano, E. W. S., R. N. Costa Filho, V. N. Freire et J. A. P. da Costa. « Velocity overshoot in zincblende and wurtzite GaN ». Solid State Communications 110, no 9 (mai 1999) : 469–72. http://dx.doi.org/10.1016/s0038-1098(99)00114-3.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
46

Zhang, Li, Su You, Ming Zuo et Qing Yang. « Solution Synthesis of Nonequilibrium Zincblende MnS Nanowires ». Inorganic Chemistry 56, no 14 (29 juin 2017) : 7679–86. http://dx.doi.org/10.1021/acs.inorgchem.7b00247.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
47

Goldammer, W., J. Backhaus et W. Ludwig. « Surface phonons and reconstruction for zincblende structures ». Physica Scripta 38, no 2 (1 août 1988) : 155–58. http://dx.doi.org/10.1088/0031-8949/38/2/006.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
48

Lin, M. E., B. N. Sverdlov, S. Strite, H. Morkoç et A. E. Drakin. « Refractive indices of wurtzite and zincblende GaN ». Electronics Letters 29, no 20 (1993) : 1759. http://dx.doi.org/10.1049/el:19931172.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
49

Soma, T., S. Tahata et H. Matsuo Kagaya. « Interstitial Atom in the Zincblende-Type Lattice ». physica status solidi (b) 157, no 2 (1 février 1990) : 509–18. http://dx.doi.org/10.1002/pssb.2221570203.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
50

Wolverson, D., C. Bradford, K. A. Prior et B. C. Cavenett. « UV Raman Microscopy of Zincblende Magnesium Sulphide ». physica status solidi (b) 229, no 1 (janvier 2002) : 93–96. http://dx.doi.org/10.1002/1521-3951(200201)229:1<93 ::aid-pssb93>3.0.co;2-2.

Texte intégral
Styles APA, Harvard, Vancouver, ISO, etc.
Vous pouvez également être intéressé par les bibliographies sur le sujet « Zincblend » pour d’autres types de sources :
Thèses
Nous offrons des réductions sur tous les plans premium pour les auteurs dont les œuvres sont incluses dans des sélections littéraires thématiques. Contactez-nous pour obtenir un code promo unique!

Vers la bibliographie