Bibliographies thématiques / Zincblend

Littérature scientifique sur le sujet « Zincblend »

Auteur : Grafiati
Publié le 11 mars 2023

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Articles de revues sur le sujet "Zincblend"

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Yasuda, Hidehiro, Kimihisa Matsumoto, Tatsuya Furukawa, Masaki Imamura, Noriko Nitta et Hirotaro Mori. « Structural Stabilities in GaAs Nanocrystals Grown on Si (111) Surface ». Materials Science Forum 654-656 (juin 2010) : 1772–75. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1772.

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Structural stabilities in GaAs nanocrystals grown on the Si (111) substrate have been studied by transmission electron microscopy in order to see the structure and growth mechanism. The GaAs nanocrystals grown epitaxially on the Si (111) surface kept at 573 K have thin shapes consisting of a flat surface which is parallel to the Si (111) surface. The crystalline structure of the initial growth layer, below approximately 5 nm in thickness is zincblend, but with increasing thickness the structure changes to the wurtzite structure by formation of orderly-arranged stacking faults. The small difference in the driving force between wurtzite and the zincblende structure could lead to a situation where the kinetic rate of nucleus formation is higher for the wurtzite structure than for the zincblende structure. It would highly increase the probability that the wurtzite structure is formed as a non-equilibrium state.
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Mousavi, S. Javad. « The effect of etchants on surface of CdTe single crystal ». JOURNAL OF ADVANCES IN PHYSICS 12, no 1 (30 juillet 2016) : 4145–47. http://dx.doi.org/10.24297/jap.v12i1.166.

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Cadmium telluride crystals (CdTe) have been grown by the sublimation method. The crystal polarity of the CdTe with the zincblend structure has been studied. Two different crystallographic defect and etch pits are revealed on the (111) Cd and  Te surfaces by different etchant.
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Mahmood, A., et L. Enrique Sansores. « Band structure and bulk modulus calculations of germanium carbide ». Journal of Materials Research 20, no 5 (mai 2005) : 1101–6. http://dx.doi.org/10.1557/jmr.2005.0172.

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Band-structure calculations of germanium carbide (GeC) show that it is a new indirect wide band gap semiconducting material, which crystallizes in both cubic and hexagonal phases. Through the density functional and total-energy technique in the generalized gradient approximation, the two polytypes 3C and 2H of GeC were studied. According to our calculations, it is a hard material with a percentage of covalency of about 80–90%. Important energy gaps were determined. The bulk modulus, density of states, and charge density were calculated. For the bulk modulus calculations, Murnaghan’s equation of state was used under elastic deformation to measure hardness. Our calculations showed that this semiconducting material crystallizes in zincblend (Eg = 1.76 eV) and wurtzite (Eg = 2.5 eV) structures.
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Zhao, Q. H., J. D. Parsons, H. S. Chen, A. K. Chaddha, J. Wu, G. B. Kruaval et D. Downham. « Single crystal titanium carbide, epitaxially grown on zincblend and wurtzite structures of silicon carbide ». Materials Research Bulletin 30, no 6 (juin 1995) : 761–69. http://dx.doi.org/10.1016/0025-5408(95)00056-9.

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Gupta, Monika, Jaya Shrivastava, Vidhika Sharma, Anjana Solanki, Ananad Pal Singh, V. R. Satsangi, S. Dass et Rohit Shrivastav. « Enhanced Photoelectrochemical Activity of 120 MeV Ag9+ Irradiated Nanostructured Thin Films of ZnO for Solar-Hydrogen Generation via Splitting of Water ». Advanced Materials Research 67 (avril 2009) : 95–102. http://dx.doi.org/10.4028/www.scientific.net/amr.67.95.

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This paper deals with a study on 120 MeV Ag9+ irradiated thin films of zinc oxide (ZnO), obtained by sol-gel – spin coating onto TCO glass plates. Films irradiated at fluence 5×1011, 3×1012, 5×1012 and 2×1013 ions cm-2, were optically characterized for band gap determination. XRD analysis revealed polytypism as both wurtzite and zincblend phases co-evolved. Scherrer’s calculations indicated grain size in nanodimensions, while SEM analysis indicated smooth surface morphology of films. Flat band potentials and donor densities were evaluated by Mott-schottky calculations. For PEC studies, thin films of ZnO were employed as working electrode in conjunction with Platinum Counter electrode, Saturated Calomel Reference electrode, 13 pH aqueous solution of NaOH as electrolyte and 150W Xenon Arc light source for illumination. A significant gain in photoelectrochemical current was recorded on SHI irradiation. The films irradiated at fluence 3×1012 ions cm-2 yielded maximum increase in photocurrent that was nearly five times compared to unirradiated samples.
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Bhattacharya, P., T. K. Sharma, S. Singh, A. Ingale et L. M. Kukreja. « Observation of zincblend phase in InN thin films grown on sapphire by nitrogen plasma-assisted pulsed laser deposition ». Journal of Crystal Growth 236, no 1-3 (mars 2002) : 5–9. http://dx.doi.org/10.1016/s0022-0248(01)02083-8.

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Edossa, Teshome Gerbaba, et Menberu Woldemariam. « Electronic, structural and optical properties of zincblend and wurtizite cadmium selenide (CdSe) using density functional theory and hubbard correction ». Physics and Chemistry of Solid State 22, no 1 (25 janvier 2021) : 16–23. http://dx.doi.org/10.15330/pcss.22.1.16-23.

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Zinc blend (zb) and wurtizite (wz) structure of cadmium selenide (CdSe) is determined using density-functional theory within local density approximation (LDA), generalized gradient approximation (GGA), Hubbard-correction (GGA+U) and Hybrid functional approximation (PBE0 or HSE06). The first principle pseudopotential plane wave is used and the relaxed atomic position for the CdSe in zb and wz structure was obtained by using total energy and force minimization method following the Hellmann Feynman approach. The convergence test of total energy with respect to cutoff energy and k-point sampling is performed . The equilibrium lattice constant and unit cell volume of CdSe in both phases are calculated and the obtained value is compared` with experimental values. In addition the band gap of CdSe is analyzed using DFT within LDA, GGA, DFT+U and PBE0 to approximate the unknown exchange correlation functional. The band gap values obtained using LDA and GGA are severally under estimated due to their poor approximation of exchange-correlation potential. This problem was improved by using projector augmented-wave pseudopotential within Hubbard-correction (GGA+U) and the hybrid functional approximation. Optical properties: complex and real parts of dielectric function, energy loss spectrum and absorption coefficient of CdSe in both ZB and WZ phase were studied.
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Espitia R., Miguel Jose, John Hernan Diaz Forero et Octavio Jose Salcedo Parra. « Computational calculation of the relative phase of the MnN compound ». International Journal of Mathematical Analysis 11, no 22 (2017) : 1081–88. http://dx.doi.org/10.12988/ijma.2017.711144.

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In this work computational calculations ab initio were performed to determine the relative stability, the structural and electronic properties of manganese nitride MnN. The calculations were made in the structures NaCl, Zincblenda, CsCl and wurtzita; using the method increased plane waves and linearized in the full potential version (FP-LAPW), within the formalism of the density functional theory (DFT). We find that the most stable crystallization phase is Zincblende and that the compound can pass to the NaCl structure by applying an external pressure. From the DOS state density, it is found that the manganese nitride has a metallic behavior due to the Mn-d and N-p orbitals that cross the Fermi level; MnN possesses magnetic properties with a magnetic moment of 2.53 µβ/cell.
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Sink, Joseph, et Craig Pryor. « Empirical tight-binding parameters for wurtzite group III–V(non-nitride) and IV materials ». AIP Advances 13, no 2 (1 février 2023) : 025354. http://dx.doi.org/10.1063/5.0129007.

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Suitable tight-binding models for wurtzite III–V (non-nitride) and group-V materials are presently missing in the literature. Many commonly used nearest neighbor tight-binding models for cubic-zincblende semiconductors result in highly inaccurate band structures when transferred to hexagonal polytypes. Wurtzite parameters would be of use in modeling nanowires that primarily condense into either wurtzite or zincblende crystal phases. Nanowire growth has seen significant development over the last decade, and polytypic heterostructures are now able to be fabricated. We have produced a set of spds* tight-binding parameters to be used in the hexagonal-wurtzite crystal phase for non-nitride III–V and group V semiconductors. We confine our parameter space to remain in the vicinity of a well-established zincblende parameter set to ensure semi-transferability between the wurtzite and zincblende polytypes. Our wurtzite parameters, when combined with the existing zincblende parameters, enable modeling electronic structures of heterostructures containing both the wurtzite and zincblende crystal phases.
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Farahmand, Maziar, et Kevin F. Brennan. « Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs ». MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000) : 633–39. http://dx.doi.org/10.1557/s1092578300004865.

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The output characteristics, cutoff frequency, breakdown voltage and the transconductance of wurtzite and zincblende phase GaN MESFETs have been calculated using a self-consistent, full band Monte Carlo simulation. It is found that the calculated breakdown voltage for the wurtzite device is considerably higher than that calculated for a comparable GaN zincblende phase device. The zincblende device is calculated to have a higher transconductance and cutoff frequency than the wurtzite device. The higher breakdown voltage of the wurtzite phase device is attributed to the higher density of electronic states for this phase compared to the zincblende phase. The higher cutoff frequency and transconductance of the zincblende phase GaN device is attributed to more appreciable electron velocity overshoot for this phase compared to that for the wurtzite phase. The maximum cutoff frequency and transconductance of a 0.1 μm gate-length zincblende GaN MESFET are calculated to be 220GHz and 210 mS/mm, respectively. The corresponding quantities for the wurtzite GaN device are calculated to be 160GHz and 158 mS/mm.
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Thèses sur le sujet "Zincblend"

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Chitta, Valmir Antonio. « Propriedades eletrônicas de hetero-estruturas de semicondutores zincblende ». Universidade de São Paulo, 1987. http://www.teses.usp.br/teses/disponiveis/54/54131/tde-22052009-131752/.

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Utilizou-se um Hamiltoniano KP (6x6) do tipo Kane para, se estudar a estrutura de bandas e níveis de Landau para heteroestruturas de semicondutores zincblende dos grupos III-V e II-VI. Os efeitos do acoplamento entre as bandas de condução e valência, da mistura dos estados da banda de valência, da não-parabolicidade dos níveis, da total degenerescência dos níveis, do warping e das descontinuidades das massas efetivas nas heterointerfaces são levados em conta. Mostrou-se que a interação entre as bandas de condução e valência não pode ser desprezada, mesmo para semicondutores de gap largo, como citado em trabalhos existentes na literatura. Para um estudo sistemático do modelo, utilizou-se um poço quântico de GaAs Ga(Al)As e então aplicou-se o modelo a um sistema de semicondutores semi-magnéticos (poço quântico de CdTe Cd(Mn)Te).
A Kane-like (6x6) KP Hamiltonian is used to study the subband structure and Landau levels for group III-V and group II-VI zincblende semiconductor heterostructures. The effects of conduction-valence band coupling, valence band states mixing, nonparabolicity of the levels, the full degeneracy of the levels, warping and effective masses discontinuities at the heterointerfaces are taken into account. It is shown that the interaction between conduction-valence bands cannot be neglected, even so the semicondutctor have wide gap, as claimed in previous work in the literature. GaAs-Ga(Al)As quantum well was used as a model for a systematic study of the effects of each effective KP parameters. Then, it was applied to the study the subband structure of semi-magnetic semiconductor system (a quantum well of CdTe-Cd(Mn)Te.
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Mosqueiro, Thiago Schiavo. « Transições ópticas em heteroestruturas semicondutoras Zincblende com duas sub-bandas ». Universidade de São Paulo, 2011. http://www.teses.usp.br/teses/disponiveis/76/76131/tde-20042011-154055/.

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Apresento neste trabalho uma derivação alternativa da hamiltoniana efetiva para um elétron na banda de condução de uma heteroestrutura semicondutora de rede Zincblende. Partindo do modelo de Kane 8 × 8 e da aproximação das funções envelope, esta hamiltoniana efetiva foi obtida com a linearização dos denominadores (dependentes das autoenergias) presentes na equação para a banda de condução, sob a hipótese de que o gap de energia seja muito maior que todas as demais diferenças de energia envolvidas (verdade para a maioria das estruturas Zincblende). A partir de um procedimento introduzido previamente1,3, desenvolvi um procedimento mais geral que implementa sistematicamente esta linearização até segunda ordem no inverso do gap de energia e que corrige a normalização do spinor da banda de condução usando as bandas de valência. Este procedimento é idêntico à expansão em série de potência no inverso da velocidade da luz utilizada para se obter aproximações relativísticas da equação de Dirac. Uma vantagem deste procedimento é a arbitrariedade na forma dos potenciais, o que implica na validade da hamiltoniana resultante para poços, fios e pontos quânticos. Evidencio também as consequências de cada termo desta hamiltoniana efetiva para os autoestados eletrônicos em poços retangulares, incluindo termos independentes de spin inéditos (Darwin e interação momento linearcampo elétrico). Estes resultados estão de acordo com os estudos anteriores4. A fim de estudar transições ópticas dentro da banda de condução, mostro que o acoplamento mínimo pode ser realizado diretamente na hamiltoniana de Kane se os campos externos variam tão lentamente quanto as funções envelope. Repetindo a linearização dos denominadores de energia, derivo uma hamiltoniana efetiva para a banda de condução com acoplamentos elétron-fótons. Um destes acoplamentos, induzido exclusivamente pela banda de valência, origina transições mediadas pelo spin eletrônico. Estas transições assistidas por spin possibilitam mudanças, opticamente induzidas, na orientação do spin eletrônico, um fato que talvez possa ser útil na construção de dispositivos spintrônicos. Por fim, as taxas de transição deste acoplamento apresentam saturação e linhas de máximos e mínimos no espaço recíproco. Espero que estas acoplamentos ópticos possam auxiliar na observação dos efeitos dos acoplamentos spin-órbita intra (Rashba) e intersubbandas.
In this work, I present an alternative derivation of the conduction band effective hamiltonian for Zincblende semiconductor heterostructures. Starting from the 8×8 Kane model and envelope function approximation, this effective hamiltonian was obtained by means of a linearization in the eigenenergy-dependent denominators present the conduction band equation, under the hypothesis that the energy gap is bigger than any other energy difference in the system (true for mostly every Zincblende semiconductor bulk or heterostructure). Based on a previous procedure1,3, I have developed a more general procedure that implements sistematicaly (i) this linearization and (ii) renormalizes the conduction band spinor using the valence bands, both (i) and (ii) up to second order in the inverse of the energy gap. This procedure is identical to the expansion in power series of the inverse of the light speed used to derive non-relativistic approximations of the Dirac equation. One advantage of this procedure is the generality of the potentials adopted in our derivation: the same results hold for quantum wells, wires and dots. I show the consequences of each term of this hamiltonian for the electron eigenstates in retangular wells, including novel spin-independent terms (Darwin and linear momentumelectric field couplings). These resulties agree with previous works4. In order to study conduction band optical transitions, I show that the minimal substitution can be performed directly in the Kane hamiltonian if the external fields vary slowly (at least, as slowly as the envelope functions). Repeating the linearization of the energy denominators, I derive a new effective hamiltonian, up to second order in the inverse of the energy gap, with electron-photons couplings. One of these couplings, induced exclusively by the valence bands, gives rise to optical transitions mediated by the electron spin. This spin-assisted coupling enable optically-induced spin flipps in conduction subband transitions, which can be useful in the construction of spintronic devices. Finaly, the spin-assisted transitions rates show saturation and lines of maxima and minima in the reciprocal lattice. I hope that these optical couplings can be of any help in the observation of interesting effects induced by the intra and intersubband spin-orbit coupling.
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Gutiérrez, Valdés Iasser. « Cálculo y análisis de la estructura de mínima energía del seleniuro de cadmio en su fase zincblende y con dopaje de níquel ». Tesis de Licenciatura, Universidad Autónoma del Estado de México, 2017. http://hdl.handle.net/20.500.11799/80128.

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Los materiales semiconductores juegan un papel muy importante en el desarrollo tecnol ogico actual; sin embargo, a un se desconocen muchas de sus propiedades f sicas. Por tal, motivo es imprescindible analizarlos desde el punto de vista te orico-experimental y computacional, para poder comprender sus diferentes caracter sticas y ver las posibles aplicaciones, con el n de lograr un desarrollo y mejoramiento en la tecnolog a con base a los resultados de estos an alisis.
CONACyT proyecto \Estudio de Propiedades Eléctricas y Magnéticas de Nanocompuestos
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Bergslid, Tore Sivertsen. « Implementing a Full-Band Monte Carlo Model for Zincblende Structure Semiconductors ». Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for fysikk, 2013. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-23254.

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During the work with this master's thesis a number of improvements have been made to the Monte Carlo program being developed at FFI. Algorithms for handling numerical band and scattering rate data have been constructed and integrated with the program. Of all the changes made in this work, most important is the fact that the program has been made capable of running with band structures and scattering rates calculated by the k*p-method, leaving the less accurate analytical approximations behind. The program is now capable of running bulk Monte Carlo simulations using a full-band model for the valence bands. All important infrastructure is also set up for adding full-band versions of other bands.
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Abd, El All Naglaa Fathy. « Negative Thermal Expansion in Zincblende Structure : an EXAFS study of CdTe ». Doctoral thesis, Università degli studi di Trento, 2010. https://hdl.handle.net/11572/369152.

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To gain a deeper insight on the local origin of NTE in zincblende crystals, EXAFS measurements have been performed on CdTe, which has NTE properties intermediate between Ge and CuCl. In this work an accurate evaluation of the bond thermal expansion, parallel and perpendicular MSRDs and distribution asymmetry of the first shell of CdTe has been made, obtaining a good agreement between two different procedures of the data analysis (i) ratio method (ii) FEFF6-FEFFIT method. The values of the relevant parameters of CdTe were found intermediate between the corresponding values previously found for Ge and CuCl. The positive contribution to thermal expansion due to the bond stretching and the negative contribution due to the tension effects are disentangled and quatified in terms of the bond thermal expansion and the perpendicular MSRD, respectively, determined by the EXAFS analysis. A critical comparison of EXAFS and Bragg diffraction results; thermal expansion, thermal factors and correlation of atomic vibration, for the iso-structural crystals Ge, CdTe and CuCl has been performed. The correlation between several quantities measured by EXAFS and NTE properties is confirmed.
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Ngo, Tuan Nghia, et Irina Zubritskaya. « Electrical and Optical Characterization of InP Nanowire Ensemble Photodetectors ». Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-17457.

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Photodetectors are semiconductor devices that can convert optical signals into electrical signals. There is a wide range of photodetector applications such as fiber optics communication, infrared heat camera sensors, as well as in equipment used for medical and military purposes. Nanowires are thin needle-shaped structures made of semiconductor materials, e.g. gallium arsenide (GaAs), indium phosphide (InP) or silicon (Si). Their small size, well-controlled crystal structure and composition as well as the possibility to fabricate them monolithically on silicon make them ideally suited for sensitive photodetectors with low noise. In this project, Fourier Transform Infrared (FTIR) Spectroscopy is used to investigate the optical characteristics of InP nanowire-based PIN photodetectors. The corresponding electrical characteristics are also measured using very sensitive instrumentation. A total of 4 samples consisting of processed nanowires with 80 nm diameter but different density and length have been examined. The experiments were conducted from 78K (-196oC) to room temperature 300K (27oC). The spectrally resolved photocurrent and current-voltage (IV) curves (in darkness & under illumination) for different temperatures have been studied and analyzed. The samples show excellent IV performance with very low leakage currents. The photocurrent scales with the number of nanowires, from which we conclude that most photocurrent is generated in the substrate. Spectrally resolved photocurrent data, recorded at different temperatures, display strong absorption in the near-infrared region with interesting peaks that reveal the underlying optical processes in the substrate and nanowires, respectively. The nature of the absorption peaks is discussed in detail. This study is an important step towards integration of optically efficient III-V nanoscale devices on cheap silicon substrates for applications e.g. on-chip optical communication and solar cells for energy harvesting.
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Mjåland, Terje Sund. « Micro-photoluminescence spectroscopy of self-catalyzed zincblende GaAs nanowires grown by molecular beam epitaxy ». Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for elektronikk og telekommunikasjon, 2012. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-19066.

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In this thesis, single zincblende GaAs nanowires grown by molecular beam epitaxy using the self-catalyzed approach were studied with m-photoluminescence spectroscopy in order to assess the optical quality of self-catalyzed GaAs nanowires grown for the first time at NTNU and to compare the optical properties of self-catalyzed GaAs nanowires with Au-assisted GaAs nanowires and bulk GaAs references. The low temperature and temperaturedependence measurements revealed type II recombinations between zincblende and wurtzite segments occurring at the nanowire tips, however it was established that radiative recombination does not take place in the zincblende GaAs nanowire core. As the thesis progressed, valuable feedback was given to the growers in order to optimize nanowire growth conditions. The thesis builds upon data from earlier work within this project andprovides a foundation for future work on self-catalyzed GaAs nanowire devices at NTNU.
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Bradford, Christine Bradford. « MBE growth and characterisation of Zincblende MgS-based II-VI semiconductor material and devices ». Thesis, Heriot-Watt University, 2002. http://hdl.handle.net/10399/407.

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Müllhäuser, Jochen R. « Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy ». [S.l. : s.n.], 1999. http://deposit.ddb.de/cgi-bin/dokserv?idn=958732159.

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Stark, Thomas S. « Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors ». Thesis, University of North Texas, 1999. https://digital.library.unt.edu/ark:/67531/metadc2202/.

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Generally, nonlinear optics studies investigate optically-induced changes in refraction or absorption, and their application to spectroscopy or device fabrication. The photorefractive effect is a nonlinear optical effect that occurs in solids, where transport of an optically-induced free-carrier population results in an internal space-charge field, which produces an index change via the linear electrooptic effect. The photorefractive effect has been widely studied for a variety of materials and device applications, mainly because it allows large index changes to be generated with laser beams having only a few milliwatts of average power.Compound semiconductors are important photorefractive materials because they offer a near-infrared optical response, and because their carrier transport properties allow the index change to be generated quickly and efficiently. While many researchers have attempted to measure the fundamental temporal dynamics of the photorefractive effect in semiconductors using continuous-wave, nanosecond- and picosecond-pulsed laser beams, these investigations have been unsuccessful. However, studies with this goal are of clear relevance because they provide information about the fundamental physical processes that produce this effect, as well as the material's speed and efficiency limitations for device applications.In this dissertation, for the first time, we time-resolve the temporal dynamics of the photorefractive nonlinearities in two zincblende semiconductors, semi-insulating GaAs and undoped CdTe. While CdTe offers a lattice-match to the infrared material HgxCd1-xTe, semi-insulating GaAs has been widely used in optoelectronic and high-speed electronic applications. We use a novel transient-grating experimental method that allows picosecond temporal resolution and high sensitivity. Our results provide a clear and detailed picture of the picosecond photorefractive response of both materials, showing nonlinearities due to hot-carrier transport and the Dember space-charge field, and a long-lived nonlinearity that is due to the EL2 midgap species in GaAs. We numerically model our experimental results using a general set of equations that describe nonlinear diffraction and carrier transport, and obtain excellent agreement with the experimental results in both materials, for a wide variety of experimental conditions.
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Livres sur le sujet "Zincblend"

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Rosenberger, F. Growth of zinc selenide single crystals by physical vapor transport in microgravity : Semi-annual progress report, NASA grant NAG8-767, period of performance, 4/1/93 through 10/1/93. Huntsville, Ala : Center for Microgravity and Materials Research, University of Alabama in Huntsville, 1993.

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Rosenberger, F. Growth of zinc selenide single crystals by physical vapor transport in microgravity : Final report, NASA grant NAG8-767, period of performance, 4/1/89 - 8/31/95. Huntsville, Ala : Center for Microgravity and Materials Research, University of Alabama in Huntsville, 1995.

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Chapitres de livres sur le sujet "Zincblend"

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Schubert, Mathias. « Zincblende-Structure Materials (III–V) ». Dans Springer Tracts in Modern Physics, 81–107. Berlin, Heidelberg : Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/978-3-540-44701-6_6.

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Rössler, U. « HgSe, zincblende modification : energy bands ». Dans New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 88–89. Berlin, Heidelberg : Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_63.

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da Silva, E. C. F. « AlSb, zincblende modification : dielectric constant ». Dans Landolt-Börnstein - Group III Condensed Matter, 37–38. Berlin, Heidelberg : Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_27.

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Liu, Pu, Jun Xiao et Guowei Yang. « Silicon nanoparticles with zincblende structure ». Dans Silicon Nanomaterials Sourcebook, 247–70. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series : Series in materials science and engineering : CRC Press, 2017. http://dx.doi.org/10.4324/9781315153544-13.

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Rössler, U. « β-HgS, zincblende modification : energy bands ». Dans New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 83–84. Berlin, Heidelberg : Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_59.

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Rössler, U. « β-HgS, zincblende modification : energy gap ». Dans New Data and Updates for several Semiconductors with Chalcopyrite Structure, for several II-VI Compounds and diluted magnetic IV-VI Compounds, 85. Berlin, Heidelberg : Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-28531-8_60.

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da Silva, E. C. F. « GaSb, zincblende modification : effective mass parameters ». Dans Landolt-Börnstein - Group III Condensed Matter, 187. Berlin, Heidelberg : Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_108.

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da Silva, E. C. F. « AlP, zincblende modifiction : interband transition energies ». Dans Landolt-Börnstein - Group III Condensed Matter, 18. Berlin, Heidelberg : Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_12.

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da Silva, E. C. F. « AlP, zincblende modification : effective mass parameters ». Dans Landolt-Börnstein - Group III Condensed Matter, 20. Berlin, Heidelberg : Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_14.

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da Silva, E. C. F. « InP, zincblende modification : effective mass parameters ». Dans Landolt-Börnstein - Group III Condensed Matter, 234. Berlin, Heidelberg : Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_142.

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Actes de conférences sur le sujet "Zincblend"

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Sadeghi, A. M., et H. Arabshahi. « Influence of Plasmon Scattering on Low Field Electron Mobility in Wurtzite and Zincblend GaN ». Dans 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. IEEE, 2006. http://dx.doi.org/10.1109/commad.2006.4429902.

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Rao, Mala N. « Vibrational properties of zincblende structured ternary alloys ». Dans SOLID STATE PHYSICS : PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4790892.

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Kuo, Paulina S., K. L. Vodopyanov et M. M. Fejer. « Polarization-Diverse Parametric Processes in Zincblende Crystals ». Dans Nonlinear Optics : Materials, Fundamentals and Applications. Washington, D.C. : OSA, 2009. http://dx.doi.org/10.1364/nlo.2009.pdpb4.

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Boochani, Arash, Mohammad Reza Abolhasani et Farzad Ahmadian. « Half-Metallicity at the Zincblende VSb(001) Surfaces ». Dans 2010 Second International Conference on Computer Research and Development. IEEE, 2010. http://dx.doi.org/10.1109/iccrd.2010.113.

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Chen, Limei, Peter J. Klar, Wolfram Heimbrodt, Lorraine David, Christine Bradford et Kevin A. Prior. « Optical Spectroscopy On Metastable Zincblende MnS/ZnSe Heterostructures ». Dans PHYSICS OF SEMICONDUCTORS : 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730318.

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Ballato, A., T. Lukaszek, M. Mizan et J. Kosinski. « Lateral- and Thickness-Field Coupling in Zincblende Structures ». Dans 41st Annual Symposium on Frequency Control. IEEE, 1987. http://dx.doi.org/10.1109/freq.1987.201041.

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Obinata, T., H. Kumano, K. Uesugi, J. Nakahara et I. Suemune. « First Epitaxial Growth of Zincblende ZnSe/MgS Superlattices ». Dans 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.lb-l15.

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Tse, G., J. Pal, R. Garg, V. Haxha et M. A. Migliorato. « Non linear piezoelectricity in zincblende GaAs and InAs semiconductors ». Dans 2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, 2012. http://dx.doi.org/10.1109/nusod.2012.6316527.

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Moss, D. J., John E. Sipe et H. M. Van Driel. « Improvement in the theory of χ2 for zincblende crystals ». Dans OSA Annual Meeting. Washington, D.C. : Optica Publishing Group, 1987. http://dx.doi.org/10.1364/oam.1987.tud4.

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Résumé :
Although the linear optical properties {χ1(ω)} of semiconductors are well understood theoretically, the nonlinear optical properties {χ2(2ω,ω,ω)} are more poorly understood, with an order of magnitude typically separating theoretical and experimental results. Because optical properties reflect both the band structure and momentum matrix elements, it is clear that nonlinear optics provides a more rigorous test of models of the optical properties of semiconductors.
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Aghaeipour, Mahtab, Nicklas Anttu, Gustav Nylund, Lars Samuelson, Sebastian Lehmann et Mats-Erik Pistol. « The optical absorption in zincblende and wurtzite GaP nanowire polytypes ». Dans CLEO : Science and Innovations. Washington, D.C. : OSA, 2015. http://dx.doi.org/10.1364/cleo_si.2015.sth3m.7.

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