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Littérature scientifique sur le sujet « X-ray semiconductor detectors »

Auteur : Grafiati
Publié le 9 mars 2023
Mis à jour le 10 mars 2023

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Articles de revues sur le sujet "X-ray semiconductor detectors"

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Sareen, Rob. « Semiconductor X-Ray Detectors ». Microscopy Today 6, no 6 (août 1998) : 8–12. http://dx.doi.org/10.1017/s1551929500068152.

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Detection of characteristic x-rays is a fascinating and challenging subject. From its early beginnings with gas proportional counters it has evolved, like many branches of technology, into the use of a variety of semiconductors.The lithium compensated silicon detector [Si(Li)] has been the predominant measuring tool over the last two decades, in the last five years, increasing numbers of high purity germanium detectors (HPG) have appeared and more recently a plethora of new materials and concepts are seeing a successful introduction. Among these newer materials are compound semiconductors like mercuric iodide, cadmium telluride, cadmium zinc telluride, gallium arsenide, lead iodide, indium phosphide and diamond. Among the new concepts are Bolometers, Transition Edge Detectors, Drift Detectors, PIN Diodes, CCD arrays and PN CCD arrays.
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Lund, Mark W. « More than One Ever Wanted to Know about X-Ray Detectors Part VI : Alternate Semiconductors for Detectors ». Microscopy Today 3, no 5 (juin 1995) : 12–13. http://dx.doi.org/10.1017/s1551929500066116.

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X-ray spectrometers give the capability to determine chemical element composition in electron microscopes. The semiconductor with the most experience as an x-ray detector is silicon. Silicon is the most highly developed material on earth, and has a lot of good things going for it, but for some applications we crave something with other good properties. For example, for room temperature detectors it would be best to have a semiconductor with a wider band gap. For higher resolution it would be better to have a semiconductor with a smaller band gap. For these reasons a number of other semiconductors have been developed as x-ray detectors. In this article I will talk about narrow band gap semiconductors. Next time I will discuss large band gap semiconductors.
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Kohagura, J., T. Cho, M. Hirata, T. Okamura, T. Tamano, K. Yatsu, S. Miyoshi, K. Hirano et H. Maezawa. « New methods for semiconductor charge-diffusion-length measurements using synchrotron radiation ». Journal of Synchrotron Radiation 5, no 3 (1 mai 1998) : 874–76. http://dx.doi.org/10.1107/s0909049597017524.

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The extension of a new theory on the X-ray energy response of semiconductor detectors is carried out to characterize the X-ray response of a multichannel semiconductor detector fabricated on one silicon wafer. Recently, these multichannel detectors have been widely utilized for position-sensitive observations in various research fields, including synchrotron radiation research and fusion-plasma investigations. This article represents the verification of the physics essentials of a proposed theory on the X-ray response of semiconductor detectors. The three-dimensional charge-diffusion effects on the adjoining detector-channel signals are experimentally demonstrated at the Photon Factory for two types of multichannel detectors. These findings are conveniently applicable for measuring diffusion lengths for industrial requirements.
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Cho, T., M. Hirata, J. Kohagura, Y. Sakamoto, T. Okamura, T. Numakura, R. Minami et al. « Characterization and interpretation of the quantum efficiencies of multilayer semiconductor detectors using a new theory ». Journal of Synchrotron Radiation 5, no 3 (1 mai 1998) : 877–79. http://dx.doi.org/10.1107/s0909049598000016.

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On the basis of a new theory of semiconductor X-ray detector response, a new type of multilayer semiconductor detector was designed and developed for convenient energy analyses of intense incident X-ray flux in a cumulative-current mode. Another anticipated useful property of the developed detector is a drastic improvement in high-energy X-ray response ranging over several hundred eV. The formula for the quantum efficiency of multilayer semiconductor detectors and its physical interpretations are proposed and have been successfully verified by synchrotron radiation experiments at the Photon Factory. These detectors are useful for data analyses under strong radiation-field conditions, including fusion-plasma-emitting X-rays and energetic heavy-particle beams, without the use of high-bias applications.
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Pennicard, David, Benoît Pirard, Oleg Tolbanov et Krzysztof Iniewski. « Semiconductor materials for x-ray detectors ». MRS Bulletin 42, no 06 (juin 2017) : 445–50. http://dx.doi.org/10.1557/mrs.2017.95.

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Choi, Chi Won, Ji Koon Park, Sang Sik Kang, Sung Ho Cho, Kyung Jin Kim, Sung Kwang Park, Heung Kook Choi, Jae Hyung Kim et Sang Hee Nam. « Comparison of Semiconductor Radiation Detectors for Large Area X-Ray Imaging ». Solid State Phenomena 124-126 (juin 2007) : 123–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.123.

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We have developed a large area, flat panel detector for general applications to digital radiology. This paper presents the x-ray detection characteristics with various semiconductor radiation detectors (HgI2, PbI2, PbO, CdTe) derived by a novel wet coating process for large area deposition. The wet coating process could easily be made from large area films with printing paste mixed with semiconductor and binder material at room temperature. X-ray performance data such as dark current, sensitivity and signal to noise ratio (SNR) were evaluated. The HgI2 semiconductor was shown in much lower dark current than the others, and also has the best sensitivity. In this paper, reactivity and combination characters of semiconductor and binder material that affect electrical and x-ray detection properties would be verified through our experimental results.
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Ponpon, J. P. « Semiconductor detectors for 2D X-ray imaging ». Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment 551, no 1 (octobre 2005) : 15–26. http://dx.doi.org/10.1016/j.nima.2005.07.038.

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Manolopoulos, S., R. Bates, G. Bushnell-Wye, M. Campbell, G. Derbyshire, R. Farrow, E. Heijne, V. O'Shea, C. Raine et K. M. Smith. « X-ray powder diffraction with hybrid semiconductor pixel detectors ». Journal of Synchrotron Radiation 6, no 2 (1 mars 1999) : 112–15. http://dx.doi.org/10.1107/s0909049599001107.

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Semiconductor hybrid pixel detectors, originally developed for particle physics experiments, have been used for an X-ray diffraction experiment on a synchrotron radiation source. The spatial resolution of the intensity peaks in the diffraction patterns of silicon and potassium niobate powder samples was found to be better than that of a scintillator-based system, typically used at present. The two-dimensional position information of the pixel detector enabled multi-peak diffraction patterns to be acquired and clearly resolved without the need for an angle scan with a diffractometer. This trial experiment shows the potential of this technology for high-resolution high-rate diffraction systems.
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Samedov, Victor V. « Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry ». EPJ Web of Conferences 170 (2018) : 01014. http://dx.doi.org/10.1051/epjconf/201817001014.

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Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.
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Olschner, F., K. S. Shah, J. C. Lund, J. Zhang, K. Daley, S. Medrick et M. R. Squillante. « Thallium bromide semiconductor X-ray and γ-ray detectors ». Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment 322, no 3 (novembre 1992) : 504–8. http://dx.doi.org/10.1016/0168-9002(92)91222-u.

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Thèses sur le sujet "X-ray semiconductor detectors"

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Valaparla, Sunil K. « Experimental study of the response of semiconductor detectors for EDXRF analysis ». To access this resource online via ProQuest Dissertations and Theses @ UTEP, 2009. http://0-proquest.umi.com.lib.utep.edu/login?COPT=REJTPTU0YmImSU5UPTAmVkVSPTI=&clientId=2515.

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Barnett, Anna Megan. « Wide band gap compound semiconductor detectors for x-ray spectroscopy in harsh environments ». Thesis, University of Leicester, 2012. http://hdl.handle.net/2381/10375.

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Novel photon counting Alo.8Gao.2As, GaAs and SiC X-ray photodiodes were investigated through experiments and Monte Carlo computer simulations for their suitability as spectroscopic soft (:S 25 keY) X-ray detectors in high temperature (up to 90 QC) environments. Photon counting Alo.8Gao.2As and GaAs non-avalanche p+-i-n+ mesa X-ray photodiodes were shown to operate at temperatures as high as 90 QC. The temperature dependences of their spectral resolutions (FWHM at 5.9 keY) are reported. Analyses of the noise sources contributing to the devices' measured performances are presented which suggest that efforts to improve the spectral resolutions would be well targeted at reducing the noise contributions from the packaging of the detectors. For the GaAs diodes, the X-ray characterisation of the devices was extended to higher energies (25 keY). Internal detector X-ray fluorescence was demonstrated and Monte Carlo computer simulations were compared with the experimental results. Prior to the research presented in this thesis, the only Alo.8Gao.2As photon counting X-ray avalanche photodiodes reported in the literature (Lees et al., 2008, Nucl. Instr. and Meth. A, Vol. 594, pp. 202-205) had shown anomalies in the obtained spectra. Through new experimental measurements and computer simulations, the anomaly is explained. A new method was developed which uses the phenomenon to extract measurements of the electron and hole ionisation coefficients of Alo.8Gao.2As at a typical operating field and the first report of their temperature dependence is made. Measurements characterising the X-ray spectroscopic performance of Semi-Transparent SiC Schottky Diodes over an energy range ~6 keY to 25 keY at temperatures up to 80 QC are presented and discussed, along with relative efficiency measurements and data showing the temperature dependence of the leakage current in such devices. The research presented in this thesis shows that Alo.8Gao.2As, GaAs and SiC X-ray detectors are promising devices for high temperature soft X-ray spectroscopy.
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MAGALHAES, RODRIGO R. de. « Espectrometria de raios-x com diodos de Si ». reponame:Repositório Institucional do IPEN, 2000. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10807.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
Dissertacao (Mestrado)
IPEN/D
Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP
FAPESP:97/12485-4
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Menezes, Tiago. « Room temperature CdZnTe X- and gamma-ray detectors for nuclear physics applications ». Thesis, University of Surrey, 2000. http://epubs.surrey.ac.uk/842705/.

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Gamma-ray spectroscopy is undoubtedly the most effective tool for understanding the structure of the nucleus. In common with many other problems however, there is more information available that can be readily measured by standard experimental facilities. Therefore, this thesis investigates the potential for the use of a new detector material, CdZnTe, in nuclear physics applications. To evaluate the requirements of detection systems for nuclear physics applications, a y-ray spectroscopy experiment was performed to investigate neutron alignments in 100Mo, 104Ru and 108Pd using deep-inelastic reactions. This showed that a detector capable of detecting low energy (< 100 keV) X- rays without compromising y-ray detection efficiency could have significant benefit. A room temperature CdZnTe semiconductor detector could reasonably form part of a standard escape suppressed spectrometer. However, there is a substantially higher leakage current associated with room temperature semiconductor devices than standard cryogenically cooled semiconductor detectors. CdZnTe suffers from significant charge trapping, and therefore the rise time of the radiation induced pulses forms an important part of the signal analysis from such detectors. These two problems have implications on the design of preamplifier systems for CdZnTe detectors. For this reason, this thesis describes the design of optimised electronic systems for use with room-temperature operated CdZnTe detectors. Here, the focus is on the preamplifier design, and on practical ways of analysing noise performance of the preamplifier. A new preamplifier configuration with digital output has been developed, and a detailed signal-to-noise analysis performed. Such a circuit facilitates simultaneous measurement of both energy and pulse shape information.
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Meng, Xiao. « InGaAs/InAlAs single photon avalanche diodes at 1550 nm and X-ray detectors using III-V semiconductor materials ». Thesis, University of Sheffield, 2015. http://etheses.whiterose.ac.uk/11405/.

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Знаменщиков, Ярослав Володимирович, Ярослав Владимирович Знаменщиков, Yaroslav Volodymyrovych Znamenshchykov, Володимир Володимирович Косяк, Владимир Владимирович Косяк, Volodymyr Volodymyrovych Kosiak, Анатолій Сергійович Опанасюк, Анатолий Сергеевич Опанасюк, Anatolii Serhiiovych Opanasiuk et P. M. Fochuk. « Effect of Laser Annealing on the Properties of the Surface of Polycrystalline CdZnTe Thick Film ». Thesis, Sumy State University, 2015. http://essuir.sumdu.edu.ua/handle/123456789/42798.

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In this work effect of laser annealing on properties of surface of CdxZn1-xTe (CZT) films was studied. CZT layers were deposited by co-evaporation of CdTe and ZnTe using close-spaced vacuum sublimation (CSVS) method. Structural properties and chemical composition of films were studied by X-ray Diffraction (XRD) and Energy Dispersive Spectroscopy (EDS). The annealing of the sample was carried out with the help of micro-Raman infrared laser of 785 nm wavelength at maximal 100x magnification. It was established that laser annealing of the surface substantially causes redistribution of Zn atoms. More detailed study of the sample by the scanning of surface with the micro-Raman method allows to determine trend in this process and to detect Te-rich zones. Improvement of the crystal quality near annealed area of the thick film was achieved.
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LE, DONNE ALESSIA. « Defects in silicon carbide : effect on electrical and optical properties ». Doctoral thesis, Università degli Studi di Milano-Bicocca, 2004. http://hdl.handle.net/10281/132184.

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Nowadays semiconductor detectors are widely used for ionizing radiation spectrometry and imaging in many fields such as fundamental scientific research, material science, medical applications, security systems, archeometry and many industrial applications. The highest performance required to the detectors in terms of energy and spatial resolution, room temperature operation and radiation hardness have brought to an intense international research activity on several compound semiconductors in order to overcome the limits imposed by the conventional materials (Si and Ge). The main problems arising on using compound semiconductors (GaAs, CdTe, CdZnTe, InP…) for radiation detectors are related to the crystal impurities and defects, which are responsible of charge thermal generation and trapping, and to the junction barrier height, which determines a component of the junction reverse current, which limit the signal to noise ratio and the maximum operating temperature. In the last years, silicon carbide (SiC) has been investigated as material to fabricate radiation detectors, particularly due to its intrinsic properties, which make it potentially superior to the most common semiconductor materials. This is, in particular, related to its wide band gap, resulting in low leakage current, even at high operating temperature, and to high displacement energy, making SiC detectors less susceptible to bulk radiation damage effects. Moreover, it has recently been demonstrated that a metal-SiC junction shows extremely low current densities, even at room temperature, and this feature is very favourable for the realization of low-noise X-ray semiconductor detectors. In this thesis work the results of a research activity on low-noise X-ray detectors based on SiC will be showed. The aim of this study was both to deeply understand the structural, electrical and optical properties of SiC materials available for the device realisation and, at the same time, to investigate the effects of irradiation on SiC properties. A fundamental understanding of defect creation, accumulation, and recovery in irradiated SiC is in fact needed to advance the device fabrication and evaluate their performance in high-radiation environments. The first step of this work has been a wide-ranging characterization of as-grown SiC substrates and epilayers. Later on, the detectors have been irradiated with electrons and neutrons in order to preliminarily test their radiation hardness and the resulting damage has mainly been studied by Photoluminescence (PL) and the Deep Level Transient Spectroscopies (DLTS) and by monitoring the minority carrier diffusion length of the samples. To this purpose two different methods for the determination of the minority carriers diffusion length have been developed, the former based on a spectral response technique, the latter based on OBIC (Optical Beam Induced Current) mapping.
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Spisni, Giacomo. « Radiation-sensitive OXide semiconductor Field Effect Transistor (ROXFET) : a novel thin-film device for real-time and remote ionizing radiation detection ». Master's thesis, Alma Mater Studiorum - Università di Bologna, 2021. http://amslaurea.unibo.it/24394/.

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Nowadays, ionizing radiation detectors find application in a wide range of contexts, spanning from industry to healthcare and security. In this background, the next generation of ionizing radiation sensors require devices that are accurate, light-weight, relatively inexpensive and capable to be read-out in real-time and remotely. In recent years, research groups at the University of Bologna and the NOVA University of Lisbon (Portugal) have developed Radiation-sensitive OXide-semiconductor Field-Effect Transistors (ROXFET) to be employed as fast, real-time x-ray dosimetry detection systems. The ROXFET operation relies on the principle that, upon exposure to radiation, excitons are generated in the dielectric and separated into hole and electron charge carriers. While electrons are able to diffuse out of the dielectric layer, hole charges get trapped and contribute to the field-effect in the semiconductor channel. Macroscopically, such contribution is observable as a shift in transistor threshold voltage toward negative values, which turns out to be proportional to the absorbed radiation dose. In laboratory tests, ROXFET devices proved to be sensitive in a wide energy range and capable of providing reliable information about their radiation exposure history. Furthermore, the design of ROXFET can be integrated on a flexible substrate and read in real-time as a passive radiofrequency tag. Aim of this thesis work was to contribute to the development of the ROXFET technology. To this end, I carried out multiple characterization tests on recently fabricated samples, revealing how they outperformed previously observed radiation sensitivities. Later on, I worked in a clean-room facility to fabricate new ROXFET experimental samples by leveraging the knowledge acquired from previous observations.
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MOGUILINE, ERIC. « Evaluation et developpement de detecteurs semiconducteurs pour la spectroscopie d'absorption x ». Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10240.

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Divers types de detecteurs en silicium ont ete developpes pour la spectroscopie d'absorption x: des photodiodes sont utilisees comme moniteurs d'intensite et de position ; des detecteurs a champ de derive ont ete concus pour l'analyse de la fluorescence x en dispersion d'energie. La premiere partie du memoire rappelle le principe de la spectroscopie d'absorption x et les aspects experimentaux essentiels sont decrits. Les problemes specifiques aux divers modes de detection sont analyses, ainsi que leur incidence sur les caracteristiques des detecteurs. La deuxieme partie concerne les photodiodes utilisees en mode d'integration de courant. Diodes et electrometres doivent posseder d'excellentes caracteristiques en termes de linearite, gamme dynamique et rapport signal sur bruit. Les faisceaux de rayons x sont modules pour permettre une detection synchrone digitale. Ce dispositif donne de remarquables performances illustrees par des spectres experimentaux. Une photodiode a division de courant permet aussi de mesurer des deplacements de faisceau avec une precision micrometrique. La troisieme partie est consacree a de nouveaux types de detecteurs a champ de derive. Avec une faible capacite electrique de l'electrode de lecture pour une grande surface active, ces detecteurs possedent une tres bonne resolution en energie pour un tres fort taux de comptage. Un nouveau concept de detecteur multivoie a ete etudie et mis en uvre avec des preamplificateurs a tres bas bruit. Un cryostat a ete developpe pour le montage de 4 detecteurs totalisant 32 voies. Un autre projet plus ambitieux vise l'integration d'un transistor jfet directement dans le substrat du detecteur. La resolution en energie mesuree devient alors excellente, meme a temperature ambiante et avec de courtes constantes de filtrage. Les premiers spectres exafs ont ete enregistres avec ce type de detecteur
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PEREIRA, LILIAN N. « Uso de diodos epitaxiais de Si em dosimetria de fótons ». reponame:Repositório Institucional do IPEN, 2013. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10581.

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IPEN/D
Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP
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Livres sur le sujet "X-ray semiconductor detectors"

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G, Helmer Richard, dir. Gamma- and x-ray spectrometry with semiconductor detectors. Amsterdam : North-Holland, 1988.

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Compound semiconductor radiation detectors. Boca Raton, FL : Taylor & Francis, 2012.

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B, James R., Schirato Richard C et Society of Photo-optical Instrumentation Engineers., dir. Hard X-ray, gamma-ray, and neutron detector physics : 19-23 July 1999, Denver, Colorado. Bellingham, Wash., USA : SPIE, 1999.

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Arnold, Burger, Franks Larry A, James R. B et Society of Photo-optical Instrumentation Engineers., dir. Hard X-ray and gamma-ray detector physics VI : 3-4 August, 2004, Denver, Colorado, USA. Bellingham, Wash : SPIE, 2004.

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A, Franks Larry, et Society of Photo-optical Instrumentation Engineers., dir. Hard X-ray and gamma-ray detector physics V : 4-5 August, 2003, San Diego, California, USA. Bellingham, Wash., USA : SPIE, 2004.

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B, Hoover Richard, Doty F. Patrick et Society of Photo-optical Instrumentation Engineers., dir. Hard X-ray and gamma-ray detector physics, optics, and applications : 31 July-1 August 1997, San Diego, California. Bellingham, Wash., USA : SPIE, 1997.

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B, James R., Schirato Richard C et Society of Photo-optical Instrumentation Engineers., dir. Hard X-ray, gamma-ray, and neutron detector physics II : 31 July-2 August, 2000, San Diego, [California] USA. Bellingham, Washington : SPIE, 2000.

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B, James R., Society of Photo-optical Instrumentation Engineers., Boeing Company et Conference on X-ray Detectors (2002 : Seattle, Wash.), dir. X-ray and gamma-ray detectors and applications IV : 7-9 July Seattle, Washington, USA. Bellingham, Wash., USA : SPIE, 2002.

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B, James R., et Society of Photo-optical Instrumentation Engineers., dir. Hard X-ray and gamma-ray detector physics III : 30 July-1 August 2001, San Diego, USA. Bellingham, Wash : SPIE, 2001.

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James, R. B., Larry A. Franks et Arnold Burger. Hard x-ray, gamma-ray, and neutron detector physics XII : 2-4 August 2010, San Diego, California, United States. Sous la direction de SPIE (Society). Bellingham, Wash : SPIE, 2010.

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Chapitres de livres sur le sujet "X-ray semiconductor detectors"

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Kasap, Safa, et Zahangir Kabir. « X-Ray Detectors ». Dans Springer Handbook of Semiconductor Devices, 747–76. Cham : Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-79827-7_20.

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Tsai, Hsinhan, Jeremy Tisdale, Shreetu Shrestha, Fangze Liu et Wanyi Nie. « Emerging Lead-Halide Perovskite Semiconductor for Solid-State Detectors ». Dans Advanced X-ray Detector Technologies, 35–58. Cham : Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-64279-2_2.

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Wernisch, J., H. J. August et A. Lindner-Schönthaler. « A Method for In-Situ Calibration of Semiconductor Detectors ». Dans Advances in X-Ray Analysis, 1079–81. Boston, MA : Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3460-0_47.

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Koch-Mehrin, Kjell A. L., Sarah L. Bugby et John E. Lees. « Modelling Spectroscopic Performance of Pixelated Semiconductor Detectors Through Monte-Carlo Simulation ». Dans Advanced X-ray Detector Technologies, 59–85. Cham : Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-64279-2_3.

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Abbene, Leonardo, Gaetano Gerardi et Fabio Principato. « Digital Pulse-Processing Techniques for X-Ray and Gamma-Ray Semiconductor Detectors ». Dans Analog Electronics for Radiation Detection, 121–39. Boca Raton : Taylor & Francis, CRC Press, 2016. | Series : Devices, circuits, and systems ; 59 : CRC Press, 2017. http://dx.doi.org/10.1201/b20096-6.

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Sedlačková, Katarína, Bohumír Zaťko, Andrea Šagátová et Vladimír Nečas. « Effect of Electron Irradiation on Spectroscopic Properties of Schottky Barrier CdTe Semiconductor Detectors ». Dans High-Z Materials for X-ray Detection, 207–25. Cham : Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-20955-0_11.

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Mele, Filippo. « Application Specific Integrated Circuits for High Resolution X and Gamma Ray Semiconductor Detectors ». Dans Special Topics in Information Technology, 31–42. Cham : Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-85918-3_3.

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AbstractThe increasing demand for performance improvements in radiation detectors, driven by cutting-edge research in nuclear physics, astrophysics and medical imaging, is causing not only a proliferation in the variety of the radiation sensors, but also a growing necessity of tailored solutions for the front-end readout electronics. Within this work, novel solutions for application specific integrated circuits (ASICs) adopted in high-resolution X and $$\upgamma $$ γ ray spectroscopy applications are studied. In the first part of this work, an ultra-low noise charge sensitive amplifier (CSA) is presented, with specific focus on sub-microsecond filtering, addressing the growing interest in high-luminosity experiments. The CSA demonstrated excellent results with Silicon Drift Detectors (SDDs), and with room temperature Cadmium-Telluride (CdTe) detectors, recording a state-of-the-art noise performance. The integration of the CSA within two full-custom radiation detection instruments realized for the ELETTRA (Trieste, Italy) and SESAME (Allan, Jordan) synchrotrons is also presented. In the second part of this work, an ASIC constellation designed for X-Gamma imaging spectrometer (XGIS) onboard of the THESEUS space mission is described. The presented readout ASIC has a highly customized distributed architecture, and integrates a complete on-chip signal filtering, acquisition and digitization with an ultra-low power consumption.
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Choi, Chi Won, Ji Koon Park, Sang Sik Kang, Sung Ho Cho, Kyung Jin Kim, Sung Kwang Park, Heung Kook Choi, Jae Hyung Kim et Sang Hee Nam. « Comparison of Semiconductor Radiation Detectors for Large Area X-Ray Imaging ». Dans Solid State Phenomena, 123–26. Stafa : Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.123.

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Buttacavoli, Antonino, Fabio Principato, Gaetano Gerardi, Manuele Bettelli, Matthew C. Veale et Leonardo Abbene. « Charge Sharing and Cross Talk Effects in High-Z and Wide-Bandgap Compound Semiconductor Pixel Detectors ». Dans High-Z Materials for X-ray Detection, 189–205. Cham : Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-20955-0_10.

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Sittner, Jonathan, Margarita Merkulova, Jose R. A. Godinho, Axel D. Renno, Veerle Cnudde, Marijn Boone, Thomas De Schryver et al. « Spectral X-Ray Computed Micro Tomography : 3-Dimensional Chemical Imaging by Using a Pixelated Semiconductor Detector ». Dans Radiation Detection Systems, 111–38. 2e éd. Boca Raton : CRC Press, 2021. http://dx.doi.org/10.1201/9781003218364-5.

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Actes de conférences sur le sujet "X-ray semiconductor detectors"

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He, Zhong. « Pixelated semiconductor detectors for gamma-ray spectroscopy ». Dans Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII, sous la direction de Nerine J. Cherepy, Michael Fiederle et Ralph B. James. SPIE, 2021. http://dx.doi.org/10.1117/12.2596224.

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Payne, Stephen A., Erik Swanberg, Sean O'Neal, Paul Bennett, Leonard Cirignano, Kanai Shah et Zhong He. « Cathode waveform analysis of TlBr semiconductor detectors (Conference Presentation) ». Dans Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI, sous la direction de Arnold Burger, Ralph B. James et Stephen A. Payne. SPIE, 2019. http://dx.doi.org/10.1117/12.2530334.

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Becla, Piotr, Amlan Datta et Shariar Motakef. « Large area thallium bromide semiconductor radiation detectors with thallium contacts ». Dans Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XX, sous la direction de Michael Fiederle, Arnold Burger, Ralph B. James et Stephen A. Payne. SPIE, 2018. http://dx.doi.org/10.1117/12.2319351.

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Toufanian, Reyhaneh, Amlan Datta, Piotr Becla, Bianca Boschetti et Shariar Motakef. « Cesium lead bromide semiconductor-based gamma detectors : challenges and solutions ». Dans Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII, sous la direction de Nerine J. Cherepy, Michael Fiederle et Ralph B. James. SPIE, 2021. http://dx.doi.org/10.1117/12.2596533.

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Camarda, Giuseppe S., Aleksey E. Bolotnikov, Yonggang Cui, Rubi Gul, Anwar Hossain, Utpal N. Roy, Ge Yang, Ralph B. James et Peter E. Vanier. « Measurements on semiconductor and scintillator detectors at the Advanced Light Source (Conference Presentation) ». Dans Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, sous la direction de Michael Fiederle, Arnold Burger, Larry Franks et Ralph B. James. SPIE, 2016. http://dx.doi.org/10.1117/12.2240169.

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Engel, Klaus J., et Christoph Herrmann. « Simulation of one-dimensionally polarized x-ray semiconductor detectors ». Dans SPIE Medical Imaging, sous la direction de Norbert J. Pelc, Ehsan Samei et Robert M. Nishikawa. SPIE, 2011. http://dx.doi.org/10.1117/12.878110.

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Chirco, P., F. Casali, G. Baldazzi, E. Querzola, M. Rossi et M. Zanarini. « High energy x-ray computed tomography using semiconductor detectors ». Dans The fourteenth international conference on the application of accelerators in research and industry. AIP, 1997. http://dx.doi.org/10.1063/1.52574.

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Parsons, Ann M., Carl M. Stahle, Casey M. Lisse, R. Sachidananda Babu, Neil A. Gehrels, Bonnard J. Teegarden et Peter K. Shu. « Room temperature semiconductor detectors for hard x-ray astrophysics ». Dans SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, sous la direction de Elena Aprile. SPIE, 1994. http://dx.doi.org/10.1117/12.187260.

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Owens, Alan, Hans Andersson, Marcos Bavdaz, Christian Erd, Thomas Gagliardi, Vladimir Gostilo, N. Haack et al. « Development of compound semiconductor detectors for x- and gamma-ray spectroscopy ». Dans International Symposium on Optical Science and Technology, sous la direction de Ralph B. James, Larry A. Franks, Arnold Burger, Edwin M. Westbrook et Roger D. Durst. SPIE, 2003. http://dx.doi.org/10.1117/12.453822.

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Cronin, Kelsea P., Matthew A. Kupinski, H. B. Barber et Lars R. Furenlid. « Simulations and analysis of fluorescence effects in semiconductor x-ray and gamma-ray detectors ». Dans Physics of Medical Imaging, sous la direction de Wei Zhao et Lifeng Yu. SPIE, 2022. http://dx.doi.org/10.1117/12.2610686.

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Rapports d'organisations sur le sujet "X-ray semiconductor detectors"

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Roecker, Caleb Daniel, et Richard C. Schirato. Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements. Office of Scientific and Technical Information (OSTI), novembre 2017. http://dx.doi.org/10.2172/1409799.

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