Bibliographies thématiques / VO2 RF SWITCH

Littérature scientifique sur le sujet « VO2 RF SWITCH »

Auteur : Grafiati
Publié le 11 septembre 2023

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Articles de revues sur le sujet "VO2 RF SWITCH"

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Dumas-Bouchiat, F., C. Champeaux, A. Catherinot, A. Crunteanu et P. Blondy. « rf-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition ». Applied Physics Letters 91, no 22 (26 novembre 2007) : 223505. http://dx.doi.org/10.1063/1.2815927.

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Dumas-Bouchiat, Frédéric, Corinne Champeaux, Alain Catherinot, Julien Givernaud, Aurelian Crunteanu et Pierre Blondy. « RF Microwave Switches Based on Reversible Metal-Semiconductor Transition Properties of VO2 Thin Films : An Attractive Way To Realise Simple RF Microelectronic Devices ». MRS Proceedings 1129 (2008). http://dx.doi.org/10.1557/proc-1129-v14-01.

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AbstractMicrowave switches in both shunt and series configurations are developped using semiconductor to metal (SC-M) transition of vanadium dioxide (VO2) thin films deposited by in situ pulsed laser deposition on C-plane sapphire and SiO2/Si substrates. The influence of geometrical parameters such as the length of the switch is shown. The VO2-based switches exhibit up to 30-40 dB average isolation of the radio-frequency (RF) signal on a very wide frequency band (500 MHz-35 GHz) with weak insertion losses, when thermally activated. Furthermore, they can be electrically activated. Finally these VO2-based switches are integrated in the fabrication of innovative tunable band-stop filters which consist in a transmission line coupled with four U-shaped resonators and operate in 9-11 GHz frequency range. Its tunability is demonstrated using electrical activation of each VO2-based switch.
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Matos, Randy, et Nezih Pala. « VO2-based ultra-reconfigurable intelligent reflective surface for 5G applications ». Scientific Reports 12, no 1 (16 mars 2022). http://dx.doi.org/10.1038/s41598-022-08458-9.

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AbstractAs demand for higher capacity wireless communications increases, new approaches are needed to improve capacity. The lack of configurable radio platforms and power consumed to create new signals are some of the limitations preventing further advancements. To address these limitations, we propose an Ultra-Reconfigurable Intelligent Surface (URIS) platform based on the metal-to-insulator transition property of VO2. A VO2 layer is placed on a high-density micro-heater matrix consisting of pixels that can be electronically switched on. With this manner of control, heat can be transferred to selected areas of the VO2 layer and convert it to highly conductive metallic phase. This technique allows dynamically changing the shape of the reflection surface with high speed. We numerically investigated the heat activated switching and RF reflection characteristics of a reflectarray designed for potential 5G applications operating at 32 GHz. It consists of heating pixels with the size of 40 × 40 μm which can generate metallic VO2 patches or arbitrary shapes with ~ 100 × 100 μm spatial resolution. Our analyses resulted in large phase range of ~ 300° and approximate losses of −2 dB. The proposed device can serve as a novel platform for ultra-reconfigurable reflectarrays, other IRSs, and various wide spectral range RF applications.
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Muller, Andrei A., Alin Moldoveanu, Victor Asavei, Riyaz A. Khadar, Esther Sanabria-Codesal, Anna Krammer, Montserrat Fernandez-Bolaños et al. « 3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors ». Scientific Reports 9, no 1 (décembre 2019). http://dx.doi.org/10.1038/s41598-019-54600-5.

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AbstractRecently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such as steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency functions, new types of sensors, terahertz and optoelectronic devices. Employing radiofrequency (RF) electronic circuits with a MIT material like vanadium Dioxide, VO2, requires appropriate characterization tools and fabrication processes. In this work, we develop and use 3D Smith charts for devices and circuits having complex frequency dependences, like the ones resulting using MIT materials. The novel foundation of a 3D Smith chart involves here the geometrical fundamental notions of oriented curvature and variable homothety in order to clarify first theoretical inconsistencies in Foster and Non Foster circuits, where the driving point impedances exhibit mixed clockwise and counter-clockwise frequency dependent (oriented) paths on the Smith chart as frequency increases. We show here the unique visualization capability of a 3D Smith chart, which allows to quantify orientation over variable frequency. The new 3D Smith chart is applied as a joint complex-scalar 3D multi-parameter modelling and characterization environment for reconfigurable RF design exploiting Metal-Insulator-Transition (MIT) materials. We report fabricated inductors with record quality factors using VO2 phase transition to program multiple tuning states, operating in the range 4 GHz to 10 GHz.
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Thèses sur le sujet "VO2 RF SWITCH"

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Yang, Shuai. « Additively Manufactured Vanadium Dioxide (VO2) based Radio Frequency Switches and Reconfigurable Components ». Diss., 2020. http://hdl.handle.net/10754/664510.

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In a wireless system, the frequency-reconfigurable RF components are highly desired because one such component can replace multiple RF components to reduce the size, cost, and weight. Typically, the reconfigurable RF components are realized using capacitive varactors, PIN diodes, or MEMS switches. Most of these RF switches are expensive, rigid, and need tedious soldering steps, which are not suitable for futuristic flexible and wearable applications. Therefore, there is a need to have a solution for low cost, flexible, and easy to integrate RF switches. All the above-mentioned issues can be alleviated if these switches can be simply printed at the place of interest. In this work, we have demonstrated vanadium dioxide (VO2) based RF switches that have been realized through additive manufacturing technologies (inkjet printing and screen printing), which dramatically brings the cost down to a few cents. Also, no soldering or additional attachment step is required as the switch can be simply printed on the RF component. The printed VO2 switches are configured in two types (shunt configuration and series configuration) where both types have been characterized with two activation mechanisms (thermal activation and electrical activation) up to 40 GHz. The measured insertion loss of 1-3 dB, isolation of 20-30 dB, and switching speed of 400 ns are comparable to other non-printed and expensive RF switches. As an application for the printed VO2 switches, a fully printed frequency reconfigurable filter has also been designed in this work. An open-ended dual-mode resonator with meandered loadings has been co-designed with the VO2 switches, resulting in a compact filter with decent insertion loss of 2.6 dB at both switchable frequency bands (4 GHz and 3.75 GHz). Moreover, the filter is flexible and highly immune to the bending effect, which is essential for wearable applications. Finally, a multi-parameter (switch thickness, width, length, temperature) model has been established using a customized artificial neural network (ANN) to achieve a faster simulation speed. The optimized model’s average error and correlation coefficient are only 0.0003 and 0.9905, respectively, which both indicate the model’s high accuracy.
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SINGHAL, SPARSH. « COMPOUND WIDEBAND RECONFIGURABLE ANTENNAS BASED ON PIN DIODES AND VO2 RF SWITCHES FOR C-BAND WIRELESS STANDARDS ». Thesis, 2023. http://dspace.dtu.ac.in:8080/jspui/handle/repository/20065.

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Wireless technology is one of the most important fields of research in the world of communication systems today, and a study of communication systems would be incomplete without an understanding of antenna functioning and manufacturing. This was the primary reason we chose a project in this field. Microstrip patch antennas are gaining popularity as more and more advancements are made in the wireless communication systems. They are being used in multiple fields and the scope of research and improvements is quite high in this area. A simple patch antenna is designed to work for only a single application, having frequency of operation within a certain frequency band range but a reconfigurable antenna enables us to reconfigure this frequency band based on our different requirements. It is possible to reconfigure different functionalities of an antenna, such as frequency, polarization, radiation pattern, bandwidth etc. The common practice of making the antennas reconfigurable is by adding switches like PIN diodes and Varacter diodes in the antenna which help in changing the state of the antenna when the biasing or voltage across the diodes is changed, making it possible to observe more than one resonating state for a designed antenna. In this project, two papers v were submitted for the conference in the same field of reconfigurable antennas. The first paper titled “Fox-Face Compound Reconfigurable Antenna for Wireless Systems” presents an antenna design of a compact structured CRA (Compound Reconfigurable antenna) in which compound reconfiguration is observed by using just two PIN diodes in the antenna structure. While the second paper titled “Bandwidth Reconfigurable Wideband Antenna with comparison between PIN diodes and Vanadium Dioxide switches” presents an approach where a bandwidth reconfiguration compact antenna is presented while also suggesting an alternate approach of using Vanadium diode switches instead of PIN diodes and comparing the results in the two approaches. Both antenna structures were designed and simulated by making use of the Ansys HFSS software and the respective results were observed and presented in the conference papers and the project report here.
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Actes de conférences sur le sujet "VO2 RF SWITCH"

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Madan, H., H.-T. Zhang, M. Jerry, D. Mukherjee, N. Alem, R. Engel-Herbert et S. Datta. « 26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer ». Dans 2015 IEEE International Electron Devices Meeting (IEDM). IEEE, 2015. http://dx.doi.org/10.1109/iedm.2015.7409661.

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Vaseem, Mohammad, Su Zhen, Shuai Yang et Atif Shamim. « A Fully Printed Switch Based on VO2 Ink for Reconfigurable RF Components ». Dans 2018 48th European Microwave Conference (EuMC). IEEE, 2018. http://dx.doi.org/10.23919/eumc.2018.8541794.

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Khusro, Ahmad, Shuai Yang, Mohammad Vaseem, Mohammad S. Hashmi et Atif Shamim. « Role of Machine Learning in Rapid Modeling of RF Devices : VO2 RF Switch Modeling as a Case Study ». Dans 2021 IEEE Conference on Antenna Measurements & Applications (CAMA). IEEE, 2021. http://dx.doi.org/10.1109/cama49227.2021.9703575.

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Hariri, A., A. Crunteanu, C. Guines, C. Halleppe, D. Passerieux et P. Blondy. « Very Wide-Band and Compact VO2 Based Switches ». Dans 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP). IEEE, 2018. http://dx.doi.org/10.1109/imws-amp.2018.8457164.

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Jiang, Junwen, Grigory Chugunov et Raafat R. Mansour. « Fabrication and characterization of VO2-based series and parallel RF switches ». Dans 2017 IEEE/MTT-S International Microwave Symposium - IMS 2017. IEEE, 2017. http://dx.doi.org/10.1109/mwsym.2017.8059096.

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Boldeiu, G., D. Vasilache, V. Moagar, A. Stefanescu et G. Ciuprina. « Study of the von Mises stress in RF MEMS switch anchors ». Dans 2015 International Semiconductor Conference (CAS). IEEE, 2015. http://dx.doi.org/10.1109/smicnd.2015.7355213.

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Hillman, Chris, Phil Stupar et Zach Griffith. « Scaleable vanadium dioxide switches with submillimeterwave bandwidth : VO2 switches with impoved RF bandwidth and power handling ». Dans 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2017. http://dx.doi.org/10.1109/csics.2017.8240450.

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Yang, Shuai, Ahmad Khusro, Weiwei Li, Mohammad Vaseem, Mohammad Hashmi et Atif Shamim. « A Machine Learning-Based Microwave Device Model for Fully Printed VO2 RF Switches ». Dans 2020 50th European Microwave Conference (EuMC). IEEE, 2021. http://dx.doi.org/10.23919/eumc48046.2021.9338125.

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Sadiq, M. N., M.-B. Martin, L. Divay, Q. Levesque, G. Tanne, M. Le Roy, A. Perennec et al. « Design and Characterisation of VO2 Based Switches for Ultra-Fast Reconfigurable Devices ». Dans 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP). IEEE, 2019. http://dx.doi.org/10.1109/imws-amp.2019.8880086.

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Casu, E. A., W. A. Vitale, M. Tamagnone, M. Maqueda Lopez, N. Oliva, A. Krammer, A. Schuler, M. Fernandez-Bolanos et A. M. Ionescu. « Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications ». Dans ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC). IEEE, 2017. http://dx.doi.org/10.1109/essderc.2017.8066634.

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