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Articles de revues sur le sujet « Vapour Liquid Silod (VLS) growth mechanism »

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Auteur : Grafiati

Publié le 11 mars 2023

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Shakthivel, D., W. T. Navaraj, Simon Champet, Duncan H. Gregory et R. S. Dahiya. « Propagation of amorphous oxide nanowires via the VLS mechanism : growth kinetics ». Nanoscale Advances 1, n^o 9 (2019) : 3568–78. http://dx.doi.org/10.1039/c9na00134d.

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Lorenzzi, Jean, Nikoletta Jegenyes, Mihai Lazar, Dominique Tournier, François Cauwet, Davy Carole et Gabriel Ferro. « Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas ». Materials Science Forum 679-680 (mars 2011) : 111–14. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.111.

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In this work we report on 3C-SiC heteroepitaxial growth on 4H-SiC(0001) substrates which were patterned to form mesa structures. Two different deposition techniques were used and compared: vapour-liquid-solid (VLS) mechanism and chemical vapour deposition (CVD). The results in terms of surface morphology evolution and the polytype formation using these growth techniques were studied and compared. It was observed both 4H lateral growth from the mesa sidewalls and 3C enlargement on top of the mesas, the former being faster with CVD and VLS. Only VLS technique allowed elimination of twin boundaries for proper orientation of the mesa sidewalls.

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Lagonegro, Paola, Matteo Bosi, Giovanni Attolini, Marco Negri, Sathish Chander Dhanabalan, Francesca Rossi, Francesco Boschi, P. P. Lupo, Tullo Besagni et Giancarlo Salviati. « SiC NWs Grown on Silicon Substrate Using Fe as Catalyst ». Materials Science Forum 806 (octobre 2014) : 39–42. http://dx.doi.org/10.4028/www.scientific.net/msf.806.39.

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We report on the synthesis of SiC nanowires (NWs) using iron as catalyst. The NWs were grown on silicon substrate by vapour-liquid-solid (VLS) mechanism with propane and silane as precursors, both 3% diluted in hydrogen, and hydrogen as carrier gas. The growth temperature was 1250°C, to reach the eutectic values of the Si-Fe alloy and to permit the VLS mechanism. The as-grown SiC nanowires were characterized by scanning and transmission electron microscopy. The nanowires are from 30 to 100 nm in diameter and several μm in length, with <111> growth direction.

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Carole, Davy, Stéphane Berckmans, Arthur Vo-Ha, Mihai Lazar, Dominique Tournier, Pierre Brosselard, Véronique Soulière, Laurent Auvray, Gabriel Ferro et Christian Brylinski. « Buried Selective Growth of p-Doped SiC by VLS Epitaxy ». Materials Science Forum 717-720 (mai 2012) : 169–72. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.169.

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Selective epitaxial growth in buried patterns was studied using the vapour-liquid-solid mechanism in Al-Si melt in order to obtain p+-doped SiC localized layers on 4H-SiC substrate. Homogeneous deposition with step bunched morphology was obtained by adding propane at room temperature before growth at 1100°C. Patterns as large as 800 µm and as narrow as 10 µm were completely filled in this way. The deposition kinetics demonstrates that the process is self limited and mainly depends on the initial amount of Si in the liquid. The deposit is highly p-type doped and the p-n junction is demonstrated.

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Jegenyes, Nikoletta, Jean Lorenzzi, Véronique Soulière, Jacques Dazord, François Cauwet et Gabriel Ferro. « Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature ». Materials Science Forum 645-648 (avril 2010) : 127–30. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.127.

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Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, homoepitaxial growth by Chemical Vapour Deposition was carried out on top of these seeds. The effect of the growth temperature and of the C/Si ratio in the gas phase was investigated on the surface morphology, the roughness and the defect density. It was found that the initial highly step-bunched surface of the VLS seeds could be greatly smoothen using appropriate conditions. These conditions were also found to reduce significantly the defect size and/or density at the surface.

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Jayavel, R., T. Mochiku, S. Ooi et K. Hirata. « Vapour–liquid–solid (VLS) growth mechanism of superconducting Bi–Sr–Ca–Cu–O whiskers ». Journal of Crystal Growth 229, n^o 1-4 (juillet 2001) : 339–42. http://dx.doi.org/10.1016/s0022-0248(01)01177-0.

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Berckmans, Stéphane, Laurent Auvray, Gabriel Ferro, François Cauwet, Davy Carole, Véronique Soulière, Jean Claude Viala, Emmanuel Collard, Jean Baptiste Quoirin et Christian Brylinski. « Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport ». Materials Science Forum 679-680 (mars 2011) : 99–102. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.99.

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In this work, the growth by Vapour-Liquid-Solid (VLS) mechanism of 3C-SiC on silicon substrate is reported. Firstly, a germanium layer is deposited on the substrate. Then the temperature of the sample is increased above Ge melting point in order to form a SiGe liquid phase by reaction with the substrate. Upon reaching the target temperature (1100-1300°C) the VLS growth starts with the injection of propane in the reactor. Both Raman spectrometry and X-Ray diffraction analyses evidenced the formation of 3C-SiC on every sample. However, this SiC deposit, a few micrometers thick, is always found to be polycrystalline though textured. In parallel, the presence of an epitaxial Si-Ge alloy, whose composition depends on the growth temperature, was systematically detected between Si and SiC.

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Lorenzzi, Jean, Romain Esteve, Mihai Lazar, Dominique Tournier, Davy Carole et Gabriel Ferro. « Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned SiС Substrate ». Materials Science Forum 717-720 (mai 2012) : 165–68. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.165.

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In this work we report on SiC epitaxial growth by vapour-liquid-solid (VLS) mechanism on on-axis 4H-SiC(0001) substrates which were previously patterned to form mesa structures. The liquid phase was set to Al70Si30. At 1100°C, it led to very high homoepitaxial lateral growth (140 µm/h) with pronounced spiral growth and in plane anisotropy of growth rate. Upon temperature increase to 1200 °C, this spiral growth was suppressed and the lateral growth was further increased up to 180 µm/h. The in-plane versus out-of-plane anisotropy of growth rate was found to be as high as 60 at this temperature and 46 at 1100°C.

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Soueidan, Maher, Olivier Kim-Hak, Gabriel Ferro, Nada Habka et Bilal Nsouli. « Growth Kinetics of 3C-SiC on α-SiC by VLS ». Materials Science Forum 600-603 (septembre 2008) : 199–202. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.199.

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The growth kinetics of 3C-SiC heteroepitaxial layers on α-SiC substrates by Vapour-Liquid-Solid (VLS) mechanism in Ge-Si melts was investigated. Various parameters were studied such as temperature, melt composition, propane flux and substrate nature (polytype, polarity and misorientation). It was found that the growth rate increases with increasing temperature, propane flux, Si content of the melt and misorientation of the substrate. The calculated activation energy (from 4.7 to 6.6 kcal/mole depending on the substrate type) is very small suggesting that the limiting process is the diffusion of the dissolved carbon inside the melt. The carbon solubility inside the melt mainly affects the carbon dissolution kinetics from the gas phase. The results also suggest that surface effects are important through the layer polarity and crystalline quality.

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Ferro, Gabriel. « New Approaches to In Situ Doping of SiC Epitaxial Layers ». Advanced Materials Research 324 (août 2011) : 14–19. http://dx.doi.org/10.4028/www.scientific.net/amr.324.14.

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In this paper, the issues related to in-situ doping of silicon carbide (SiC) semiconductor during epitaxial growth are reviewed. Some of these issues can find solution by using an original approach called vapour-liquid-solid (VLS) mechanism. In this technique, the SiC seed is covered by a Sibased melt and is fed by propane in order to growth the epitaxial film. Using Al-Si melts and temperatures as low as 1100°C, very high p type doping was demonstrated, with a record value of 1.1021 at.cm-3. It leads to very low contact resistivity and even to metallic behaviour of the SiC deposit even at low temperature. Using Ge-Si melts, non intentionally low doped n type layers are grown. By forming Si-containing liquid droplets on a SiC seed, one can extrapolate this VLS growth to selective epitaxial growth (SEG). Such approach was successfully applied for both Al and Ge-based systems in order to form p+ and n doped areas respectively.

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Ahlén, Niklas, Mats Johnsson, Ann-Kristin Larsson et Bo Sundman. « On the carbothermal vapour–liquid–solid (VLS) mechanism for TaC, TiC, and TaxTi1–xC whisker growth ». Journal of the European Ceramic Society 20, n^o 14-15 (décembre 2000) : 2607–18. http://dx.doi.org/10.1016/s0955-2219(00)00121-7.

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Lorenzzi, Jean, Nikoletta Jegenyes, Mihai Lazar, Dominique Tournier, Davy Carole, François Cauwet et Gabriel Ferro. « Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate ». Materials Science Forum 711 (janvier 2012) : 11–15. http://dx.doi.org/10.4028/www.scientific.net/msf.711.11.

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In this work we report on the study of twin boundary (TB) evolution during heteroepitaxial growth of 3C-SiC on patterned 4H-SiC(0001) substrate by vapour-liquid-solid (VLS) mechanism. Ge50Si50 melt was used at a temperature of 1450°C. 3C-SiC deposit was obtained on top and outside the mesas. Some lateral enlargement of these mesas was observed but it was systematically homoepitaxial. Elimination of TBs inside the 3C-SiC deposit on top of the mesas was observed for specific mesa shape and/or orientation of the sidewalls. Though three–fold or six-fold symmetry mesas are recommended for TB elimination, originally circular mesas lead also to the same result due to initial faceting toward hexagonal shape.

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Ferro, Gabriel, Maher Soueidan, Christophe Jacquier, Phillippe Godignon, Thomas Stauden, Jörg Pezoldt, Mihai Lazar, Josep Montserrat et Yves Monteil. « Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts ». Materials Science Forum 527-529 (octobre 2006) : 275–78. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.275.

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Al-Si and Ge-Si systems were studied for selective epitaxial growth (SEG) of 4H-SiC by the Vapour-Liquid-Solid mechanism. Al-Si and Ge-Si bilayers stackings were deposited on 8° off, Si face, 4H-SiC substrates. After patterning of the layers, the samples were heated up to 1000°C and 1220°C, respectively, for Al-Si and Ge-Si stackings in order to melt the layers. Propane was introduced either during the initial heating ramp, before melting of the alloy, or after reaching the temperature plateau. It was found that introduction of propane before melting was a key parameter in order to improve the homogeneity of the deposit. In both cases, SEG of SiC was achieved. However, the best results were obtained with Ge-Si system giving smooth and uniform ∼100 nm thick epitaxial deposits on all the pattern sizes and shapes. Ge incorporation in the SiC was found to be rather limited but homogeneous in the layer.

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Marinova, Maya, Alkyoni Mantzari, Jian Wu Sun, Jean Lorenzzi, Ariadne Andreadou, Georgios Zoulis, Sandrine Juillaguet, Gabriel Ferro, Jean Camassel et Efstathios K. Polychroniadis. « Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts ». Materials Science Forum 679-680 (mars 2011) : 165–68. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.165.

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The current communication focuses on the investigation of 3C-SiC layers grown by the Vapour-Liquid-Solid mechanism on on-axis Si-face 6H-SiC substrates in SiSn melts with different compositions and at different growth temperatures. The layers are studied by Transmission Electron Microscopy and Low Temperature Photoluminescence. It was found that for melts with Sn concentration higher than 60 at% large Sn-related precipitates are formed. The depth distribution of the Sn precipitates strongly depends not only on the melt composition but also on the growth temperature. Their formation strongly influences the stacking fault density and the dopant incorporation in the layers. Lower Sn concentrations combined with higher growth temperatures should result in 3C-SiC layer with enhanced structural quality.

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Marinova, Maya, Ariadne Andreadou, Alkyoni Mantzari et Efstathios K. Polychroniadis. « On the Twin Boundary Propagation in (111) 3C-SiC Layers ». Materials Science Forum 717-720 (mai 2012) : 419–22. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.419.

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The present study reports on the propagation of twin boundaries in (111) 3C-SiC by means of conventional (CTEM) and high resolution transmission electron microscopy (HRTEM). The investigated 3C-SiC layers were homoepitaxially grown by Chemical Vapour Deposition (CVD) on layers previously grown by Vapor Liquid Solid (VLS) mechanism on 6H-SiC substrates. At the initial stages of growth the usual twin boundary that occurs is an incoherent {-211} Σ3 one. It transforms to more energetically favorable cases by several ways: (i) The initial {-211} boundary turns 90º, to a fully coherent (111) interface, forming microtwins; (ii) A step-like interface occurs with facets along the (111) and the {-211} planes; (iii) It transforms in a fourfold twin complex propagating to the surface.

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Marinova, Maya, Ariadne Andreadou, Jian Wu Sun, Jean Lorenzzi, Alkyoni Mantzari, Georgios Zoulis, Nikoletta Jegenyes et al. « Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers ». Materials Science Forum 679-680 (mars 2011) : 241–44. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.241.

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The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more.

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Maurice, Jean-Luc, Pavel Bulkin, Éric Ngo, Weixi Wang, Martin Foldyna, Ileana Florea, Pere Roca i Cabarrocas, Romuald Béjaud et Olivier Hardouin Duparc. « Visualizing the effects of plasma-generated H atoms in situ in a transmission electron microscope ». European Physical Journal Applied Physics 97 (2022) : 7. http://dx.doi.org/10.1051/epjap/2022210276.

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The radicals and atoms generated by a plasma have the effect, among others, of changing the surface energies of materials, which allows one to prepare nano-objects that would not stabilise in other conditions. This is the case of the Sn catalysed silicon nanowires (NWs) we present in this paper: without plasma, the liquid Sn at the top of NWs is unstable (because Sn naturally wets the Si) so that no growth is allowed, while in presence of the H atoms generated by the plasma, the balance of surface energies is drastically changed; the Sn droplet stabilises and can be used efficiently by the vapour-liquid-solid (VLS) mechanism of growth. Thus, if one wants to study the growth mechanisms of such NWs in situ in the transmission electron microscope (TEM), one has to adapt a plasma system on the TEM. This is precisely what was done at École polytechnique on the NanoMAX environmental TEM. The paper reports on the plasma effects, on the catalyst and on NW growth, recorded in situ in real time, at atomic resolution. The results are discussed in the light of density functional calculations of bare and hydrogenated Si surface energies.

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Oliveira, Fernando A. Costa. « Damage Assessment of Mullite Ceramic Foams in Radiant Gas Burners ». Materials Science Forum 587-588 (juin 2008) : 99–103. http://dx.doi.org/10.4028/www.scientific.net/msf.587-588.99.

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The damage imposed on open-cell mullite ceramic foams was evaluated in pre-mixed radiant gas burners. After exposure to the prevailing combustion environment, foams suffered moderate strength degradation as a result of thermal stresses being imposed on the material during service. There was evidence of chemical attack during combustion although thermal shock measurements suggest that damage sustained by the foams results mainly from thermal shock rather than chemical degradation. Indeed, samples from burners subjected to ageing tests did not show additional damage compared to those subjected to short ageing tests indicating that most of damage occurred during start-up. For comparison purposes, a set of ceramic foam samples were subjected to a water quench test so that the extent to which the foams were damage by exposure to the combustion environment, under well controlled conditions, could be established. The strength retained after thermal shock by open-cell mullite foams decreased gradually with increasing quench temperatures. This suggests a cumulative damage mechanism reflecting an increase in damage throughout the material rather than sudden failure owing to propagation of pre-existing cracks along a plane. Damage in mullite foams was mainly localised at the top layer of the burners where higher temperatures and steeper thermal gradients were imposed on the material. Surprisingly, needle-like mullite crystals with a large aspect ratio were also found to have grown at the surface of the burners via a vapour feed gas-liquid catalyst-solid needle-like growth (VLS) mechanism.

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Gómez-Palos, Isabel, Miguel Vazquez-Pufleau, Jorge Vailla, Alvaro Ridruejo, Damien Tourret et Juan José Vilatela. « Ultrafast synthesis of SiC nanowire webs by floating catalysts rationalised through in-situ measurements and thermodynamic calculations ». Nanoscale, 2022. http://dx.doi.org/10.1039/d2nr06016g.

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This work presents the synthesis of SiC nanowires floating in a gas stream through the vapour-liquid-solid (VLS) mechanism using an aerosol of catalyst nanoparticles. These conditions lead to ultrafast growth...

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Koguchi, Nobuyuki, Keiko Ishige et Satoshi Takahashi. « Growth of GaAs Epitaxial Microcrystals on a S-Terminated GaAs (001) by Vls Mechanism in MBE ». MRS Proceedings 283 (1992). http://dx.doi.org/10.1557/proc-283-815.

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ABSTRACTNumerous GaAs epitaxial microcrystals having nearly equal size were fabricated on a S-terminated GaAs(001) surface by a sequential supply of Ga and As molecular beams. The GaAs(001) surface was terminated by sulfur atom in the MBE chamber. The growth of GaAs epitaxial microcrystals is caused by a Vapour-Liquid-Solid(VLS) mechanism. GaAs epitaxial microcrystals were also fabricated on a S-terminated GaAlAs(001) surface by the same procedure.

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Mohseni, Parsian, Gregor Lawson, Alex Adronov et Ray LaPierre. « Growth and Characterization of p-n Junction Core-Shell GaAs Nanowires on Carbon Nanotube Composite Films ». MRS Proceedings 1144 (2008). http://dx.doi.org/10.1557/proc-1144-ll14-05.

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ABSTRACTThin films composed of poly(ethylene imine)-functionalized single-walled carbon nanotubes (CNTs) were formed through a vacuum filtration process and decorated with Au nanoparticles, roughly 40 nm in diameter. The Au nanoparticles, on the surface of the CNT fabric, accommodated the growth of GaAs nanowires (NWs), according to the vapour-liquid-solid (VLS) mechanism, in a gas-source molecular beam epitaxy (GS-MBE) system. Structural analysis indicated that the nanowires, up to 2.5 μm in length, were not preferentially oriented at specific angles with respect to the substrate surface. The NWs grew in the energetically favored [0001] direction of the wurtzite lattice while stacking faults, characterized as zincblende insertions, were observed along their lengths. Micro-photoluminescence spectroscopy demonstrated bulk-type optical behaviour. Current-voltage behaviour of the core-shell pn-junction heterostructured NWs exhibited asymmetric rectification. Thus, the potential for the incorporation of such hybrid NW/CNT architectures into an emerging class of flexible opto-electronic devices is demonstrated.

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