Bibliographies thématiques / Undoped Semiconductors

Littérature scientifique sur le sujet « Undoped Semiconductors »

Auteur : Grafiati
Publié le 7 septembre 2023

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Articles de revues sur le sujet "Undoped Semiconductors"

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Yang, Jin-Peng, Hai-Tao Chen et Gong-Bin Tang. « Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces ». Journal of Applied Physics 131, no 24 (28 juin 2022) : 245501. http://dx.doi.org/10.1063/5.0096697.

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We identify a universality in the Fermi level change of Van der Waals interacting semiconductor interfaces. We show that the disappearing of quasi-Fermi level pinning at a certain thickness of semiconductor films for both intrinsic (undoped) and extrinsic (doped) semiconductors over a wide range of bulk systems including inorganic, organic, and even organic–inorganic hybridized semiconductors. The Fermi level ( EF) position located in the energy bandgap was dominated by not only the substrate work function (Φsub) but also the thickness of semiconductor films, in which the final EF shall be located at the position reflecting the thermal equilibrium of semiconductors themselves. Such universalities originate from the charge transfer between the substrate and semiconductor films after solving one-dimensional Poisson's equation. Our calculation resolves some of the conflicting results from experimental results determined by using ultraviolet photoelectron spectroscopy (UPS) and unifies the general rule on extracting EF positions in energy bandgaps from (i) inorganic semiconductors to organic semiconductors and (ii) intrinsic (undoped) to extrinsic (doped) semiconductors. Our findings shall provide a simple analytical scaling for obtaining the “quantitative energy diagram” in the real devices, thus paving the way for a fundamental understanding of interface physics and designing functional devices.
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Fortunato, Elvira, Alexandra Gonçalves, António Marques, Ana Pimentel, Pedro Barquinha, Hugo Águas, Luís Pereira et al. « Multifunctional Thin Film Zinc Oxide Semiconductors : Application to Electronic Devices ». Materials Science Forum 514-516 (mai 2006) : 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.

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In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.
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Ma, Yandong, Ying Dai et Baibiao Huang. « ChemInform Abstract : Ferromagnetism in Undoped Semiconductors ». ChemInform 42, no 42 (27 septembre 2011) : no. http://dx.doi.org/10.1002/chin.201142213.

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Sacco, Olga, Antonietta Mancuso, Vincenzo Venditto, Stefania Pragliola et Vincenzo Vaiano. « Behavior of N-doped TiO2 and N-doped ZnO in Photocatalytic Azo Dye Degradation under UV and Visible Light Irradiation : A Preliminary Investigation ». Catalysts 12, no 10 (10 octobre 2022) : 1208. http://dx.doi.org/10.3390/catal12101208.

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N-doped TiO2 (N-TiO2) and N-doped ZnO (N-ZnO) were synthesized utilizing ammonia as a dopant source. The chemico-physical characteristics of synthesized samples were studied by Raman spectroscopy, X-ray diffraction, SEM analysis, N2 adsorption–desorption at −196 °C, and diffuse reflectance spectroscopy. Compared to undoped samples, the introduction of nitrogen in the semiconductor lattice resulted in a shift of band-gap energy to a lower value: 3.0 eV for N-ZnO and 2.35 eV for N-TiO2. The photocatalysts were tested for the degradation of Eriochrome Black T (EBT), which was selected as a model azo dye. Both N-doped semiconductors evidenced an improvement in photocatalytic activity under visible light irradiation (62% and 20% EBT discoloration for N-TiO2 and N-ZnO, respectively) in comparison with the undoped samples, which were inactive in the presence of visible light. Different behavior was observed under UV irradiation. Whereas N-TiO2 was more photoactive than commercial undoped TiO2, the introduction of nitrogen in ZnO wurtzite resulted in a drastic reduction in photocatalytic activity, with only 45% EBT discoloration compared to total color removal obtained with the commercial ZnO sample, suggesting intrinsic limitations for doping of this class of semiconductors.
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Huang, Danhong, T. Apostolova, P. M. Alsing et D. A. Cardimona. « Thermal-drag carrier cooling in undoped semiconductors ». Journal of Applied Physics 98, no 6 (15 septembre 2005) : 063516. http://dx.doi.org/10.1063/1.2041842.

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Hüsser, O. E., H. von Käanel et F. Lévy. « Photoelectrochemistry of Doped and Undoped Semiconductors : A Comparison ». Journal of The Electrochemical Society 132, no 4 (1 avril 1985) : 810–14. http://dx.doi.org/10.1149/1.2113963.

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Hossein-Babaei, Faramarz, Saeed Masoumi et Amirreza Noori. « Seebeck voltage measurement in undoped metal oxide semiconductors ». Measurement Science and Technology 28, no 11 (12 octobre 2017) : 115002. http://dx.doi.org/10.1088/1361-6501/aa82a4.

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Bonapasta, Aldo Amore. « Theory of H sites in undoped crystalline semiconductors ». Physica B : Condensed Matter 170, no 1-4 (avril 1991) : 168–80. http://dx.doi.org/10.1016/0921-4526(91)90120-4.

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Vishnyakov, N. V. « Formation of Potential Barriers in Undoped Disordered Semiconductors ». Semiconductors 39, no 10 (2005) : 1147. http://dx.doi.org/10.1134/1.2085261.

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Sikam, Pornsawan, Ruhan Thirayatorn, Thanayut Kaewmaraya, Prasit Thongbai, Pairot Moontragoon et Zoran Ikonic. « Improved Thermoelectric Properties of SrTiO3 via (La, Dy and N) Co-Doping : DFT Approach ». Molecules 27, no 22 (16 novembre 2022) : 7923. http://dx.doi.org/10.3390/molecules27227923.

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This work considers the enhancement of the thermoelectric figure of merit, ZT, of SrTiO3 (STO) semiconductors by (La, Dy and N) co-doping. We have focused on SrTiO3 because it is a semiconductor with a high Seebeck coefficient compared to that of metals. It is expected that SrTiO3 can provide a high power factor, because the capability of converting heat into electricity is proportional to the Seebeck coefficient squared. This research aims to improve the thermoelectric performance of SrTiO3 by replacing host atoms by La, Dy and N atoms based on a theoretical approach performed with the Vienna Ab Initio Simulation Package (VASP) code. Here, undoped SrTiO3, Sr0.875La0.125TiO3, Sr0.875Dy0.125TiO3, SrTiO2.958N0.042, Sr0.750La0.125Dy0.125TiO3 and Sr0.875La0.125TiO2.958N0.042 are studied to investigate the influence of La, Dy and N doping on the thermoelectric properties of the SrTiO3 semiconductor. The undoped and La-, Dy- and N-doped STO structures are optimized. Next, the density of states (DOS), band structures, Seebeck coefficient, electrical conductivity per relaxation time, thermal conductivity per relaxation time and figure of merit (ZT) of all the doped systems are studied. From first-principles calculations, STO exhibits a high Seebeck coefficient and high figure of merit. However, metal and nonmetal doping, i.e., (La, N) co-doping, can generate a figure of merit higher than that of undoped STO. Interestingly, La, Dy and N doping can significantly shift the Fermi level and change the DOS of SrTiO3 around the Fermi level, leading to very different thermoelectric properties than those of undoped SrTiO3. All doped systems considered here show greater electrical conductivity per relaxation time than undoped STO. In particular, (La, N) co-doped STO exhibits the highest ZT of 0.79 at 300 K, and still a high value of 0.77 at 1000 K, as well as high electrical conductivity per relaxation time. This renders it a viable candidate for high-temperature applications.
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Thèses sur le sujet "Undoped Semiconductors"

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Mak, Wing Yee. « Transport experiments in undoped GaAs/A1GaAs heterostructures ». Thesis, University of Cambridge, 2013. https://www.repository.cam.ac.uk/handle/1810/252296.

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Anandan, C. « Metal contacts to undoped a-Si:H : interface modification and Scottky barrier characteristics ». Thesis, Cardiff University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314636.

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Hui, Chun-wai. « Positron annihilation spectroscopic studies of undoped n-type zinc oxide single crystal ». Click to view the E-thesis via HKUTO, 2006. http://sunzi.lib.hku.hk/hkuto/record/B38573398.

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Ma, Shun-kit Martin. « The two gallium vacancy-related defects in undoped gallium antimonide ». Click to view the E-thesis via HKUTO, 2004. http://sunzi.lib.hku.hk/hkuto/record/B31319658.

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Hui, Chun-wai, et 許俊偉. « Positron annihilation spectroscopic studies of undoped n-type zinc oxide single crystal ». Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B38573398.

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Ma, Shun-kit Martin, et 馬信傑. « The two gallium vacancy-related defects in undoped gallium antimonide ». Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B31319658.

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Chen, Shing Rong, et 陳祥榮. « Temperature Influence on The Energy Band Gap and The Fermi Level for Undoped Semiconductors ». Thesis, 1994. http://ndltd.ncl.edu.tw/handle/35616353767997301313.

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碩士
中原大學
應用物理學系
82
A detail fitting method of the metastable semiconductors alloys presented.Alloy composition and temperature are simul- taneously considered together by combined empirical formula of composition and modified temperature terms. This fitting method is based on the least-square technique scheme,and therefore, necessitates known values of the experi- mental data for the related binaries at two ends (for composi- tion;X=0 and X=1) of ternary alloy,which taken as the input data during performing iteration processes.One can decide quantitily that the resultant value of the bowing parameter for band gap is temperature dependence also. If one hopes to study temperature influences on the fermi leevel,it is necessary to calculate the ratio of effective mass of hole and electron at the band edges. In conclusion,it found that temperature influence on the half of the energy band gap and the fermi level for undoped semiconductors are similar to each other.
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Lawless, Darren. « Photophysical studies on ultra-small semiconductor particles : CdS quantum dots, doped and undoped TiO₂2, and silver halides ». Thesis, 1993. http://spectrum.library.concordia.ca/6080/1/NN84678.pdf.

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Ray, Biswajit. « Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective ». Thesis, 2008. https://etd.iisc.ac.in/handle/2005/741.

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Undoped body multi gate (MG) Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are appearing as replacements for single gate bulk MOSFET in forthcoming sub-45nm technology nodes. It is therefore extremely necessary to develop compact models for MG transistors in order to use them in nano-scale integrated circuit design and simulation. There is however a sharp distinction between the electrostatics of traditional bulk transistors and undoped body devices. In bulk transistor, where the substrate is sufficiently doped, the inversion charges are located close to the surface and hence the surface potential solely controls the electrostatic integrity of the device. However, in undoped body devices, gate electric field penetrates the body center, and inversion charge exists throughout the body. In contrast to the bulk transistors, depending on device geometry, the potential of the body center of undoped body devices could be higher than the surface in weak inversion regime and the current flows through the center-part of the device instead of surface. Several crucial parameters (e.g. Sub-threshold slope) sometimes become more dependable on the potential of body center rather than the surface. Hence the body-center potential should also be modeled correctly along with the surface-potential for accurate calculation of inversion charge, threshold voltage and other related parameters of undoped body multi-gate transistors. Although several potential models for MG transistors have been proposed to capture the short channel behavior in the subthreshold regime but most of them are based on the crucial approximation of coverting the 2D Poisson’s equation into Laplace equation. This approximation holds good only at surface but breaks down at body center and in the moderate inversion regime. As a result all the previous models fail to capture the potential of body center Correctly and remain valid only in weak-inversion regime. In this work we have developed semiclassical compact models for potential distribution for double gate (DG) and cylindrical Gate-All-Around (GAA) transistors. The models are based on the analytical solution of 2D Poisson’s equation in the channel region and valid for both: a) weak and strong inversion regimes, b) long channel and short channel transistors, and, c) body surface and center. Using the proposed model, for the first time, it is demonstrated that the body potential versus gate voltage characteristics for the devices having equal channel lengths but different body thicknesses pass through a single common point (termed as crossover point). Using the concept of “crossover point” the effect of body thickness on the threshold voltage of undoped body multi-gate transistors is explained. Based on the proposed body potential model, a new compact model for the subthreshold swing is formulated. Some other parameters e.g. inversion charge, threshold voltage roll-off etc are also studied to demonstrate the impact of body center potential on the electrostatics of multi gate transistor. All the models are validated against professional numerical device simulator.
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Ray, Biswajit. « Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective ». Thesis, 2008. http://hdl.handle.net/2005/741.

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Undoped body multi gate (MG) Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are appearing as replacements for single gate bulk MOSFET in forthcoming sub-45nm technology nodes. It is therefore extremely necessary to develop compact models for MG transistors in order to use them in nano-scale integrated circuit design and simulation. There is however a sharp distinction between the electrostatics of traditional bulk transistors and undoped body devices. In bulk transistor, where the substrate is sufficiently doped, the inversion charges are located close to the surface and hence the surface potential solely controls the electrostatic integrity of the device. However, in undoped body devices, gate electric field penetrates the body center, and inversion charge exists throughout the body. In contrast to the bulk transistors, depending on device geometry, the potential of the body center of undoped body devices could be higher than the surface in weak inversion regime and the current flows through the center-part of the device instead of surface. Several crucial parameters (e.g. Sub-threshold slope) sometimes become more dependable on the potential of body center rather than the surface. Hence the body-center potential should also be modeled correctly along with the surface-potential for accurate calculation of inversion charge, threshold voltage and other related parameters of undoped body multi-gate transistors. Although several potential models for MG transistors have been proposed to capture the short channel behavior in the subthreshold regime but most of them are based on the crucial approximation of coverting the 2D Poisson’s equation into Laplace equation. This approximation holds good only at surface but breaks down at body center and in the moderate inversion regime. As a result all the previous models fail to capture the potential of body center Correctly and remain valid only in weak-inversion regime. In this work we have developed semiclassical compact models for potential distribution for double gate (DG) and cylindrical Gate-All-Around (GAA) transistors. The models are based on the analytical solution of 2D Poisson’s equation in the channel region and valid for both: a) weak and strong inversion regimes, b) long channel and short channel transistors, and, c) body surface and center. Using the proposed model, for the first time, it is demonstrated that the body potential versus gate voltage characteristics for the devices having equal channel lengths but different body thicknesses pass through a single common point (termed as crossover point). Using the concept of “crossover point” the effect of body thickness on the threshold voltage of undoped body multi-gate transistors is explained. Based on the proposed body potential model, a new compact model for the subthreshold swing is formulated. Some other parameters e.g. inversion charge, threshold voltage roll-off etc are also studied to demonstrate the impact of body center potential on the electrostatics of multi gate transistor. All the models are validated against professional numerical device simulator.
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Chapitres de livres sur le sujet "Undoped Semiconductors"

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Tříska, Aleš, Jan Kočka et Milan Vanĕček. « Density of Gap States in Undoped and Doped Amorphous Hydrogenated Silicon Obtained by Optical Spectroscopy ». Dans Disordered Semiconductors, 459–68. Boston, MA : Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_50.

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Yu, P. W. « Persistent Photoluminescence Quenching Effect of 0.77-eV Emission in Undoped Semi-Insulating GaAs ». Dans Proceedings of the 17th International Conference on the Physics of Semiconductors, 747–50. New York, NY : Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_166.

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Hickmott, T. W., P. M. Solomon, F. F. Fang, R. Fischer et H. Morkoç. « Magnetotunneling and Magnetic Freezeout in n-GaAs-Undoped AlxGa1-xAs-n+GaAs Capacitors ». Dans Proceedings of the 17th International Conference on the Physics of Semiconductors, 417–20. New York, NY : Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_92.

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Bonapasta, Aldo Amore. « Theory of H sites in undoped crystalline semiconductors ». Dans Hydrogen in Semiconductors, 168–80. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50022-x.

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Tang, X. M., J. Weber, Y. Baer et F. Finger. « The dispersive diffusion of hydrogen in undoped a-Si:H ». Dans Hydrogen in Semiconductors, 146–48. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50019-x.

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Deák, P., L. C. Snyder, M. Heinrich, C. R. Ortiz et J. W. Corbett. « Hydrogen complexes and their vibrations in undoped crystalline silicon ». Dans Hydrogen in Semiconductors, 253–58. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50035-8.

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EPPERLEIN, P. W., et H. P. MEIER. « IMPURITY TRAPPING IN NOMINALLY UNDOPED GaAs/AIGaAs QUANTUM WELLS ». Dans Defect Control in Semiconductors, 1223–28. Elsevier, 1990. http://dx.doi.org/10.1016/b978-0-444-88429-9.50045-8.

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Marzouki, Riadh. « The Cuprate Ln2CuO4 (Ln : Rare Earth) : Synthesis, Crystallography, and Applications ». Dans Crystal Growth - Technologies and Applications [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.109193.

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This chapter is concerned with a study of undoped and doped cuprates of the general formula Ln2CuO4 (Ln = rare-earth metal) and Ln2–xMxCuO4±δ (Ln = rare earth and M = Sr, Ba, Ca, Ln’, Bi, and 3d metal). The crystal structures of the undoped and doped cuprates having the notations (T, T′, T*, S, and O), significantly depend, however, on the synthetic route. The topotactic synthesis is a specific method, which allows the transformation of the cuprate from the T to T′ structure. The importance of these materials originates from the discovery of the unconventional superconductors of the Ce-doped Ln2CuO4. The cuprate materials could function as insulators or semiconductors which are valuable tools in optoelectronic applications. The doped cuprate materials are good ionic conductors and are found useful as electrodes in fuel cell applications. The undoped cuprates reveal high dielectric properties.
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Labidi, H., K. Zellama, P. Germain, M. Astier, D. Lortigues, J. V. Bardeleben, M. L. Theye, L. Chahed et C. Godet. « Role of the hydrogen in the light-induced defects in undoped hydrogenated amorphous silicon ». Dans Hydrogen in Semiconductors, 265–68. Elsevier, 1991. http://dx.doi.org/10.1016/b978-0-444-89138-9.50037-1.

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Rudolph, P., S. Kawasaki, S. Yamashita, S. Yamamoto, Y. Usuki, Y. Konagaya, S. Matada et T. Fukuda. « Attempts to growth of undoped CdTe single crystals with high electrical resistivity ». Dans Selected Topics in Group IV and II–VI Semiconductors, 28–33. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82411-0.50095-4.

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Actes de conférences sur le sujet "Undoped Semiconductors"

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Gupta, K. Das, W. Y. Mak, F. Sfigakis, H. E. Beere, I. Farrer, D. A. Ritchie, Jisoon Ihm et Hyeonsik Cheong. « Ultra-shallow undoped 2DEGs in GaAs-AlGaAs heterostructures ». Dans PHYSICS OF SEMICONDUCTORS : 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666389.

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See, Andrew M., Oleh Klochan, Adam P. Micolich, Alex R. Hamilton, Martin Aagesen, Poul E. Lindelof, Jisoon Ihm et Hyeonsik Cheong. « Fabrication of Undoped AlGaAs∕GaAs Electron Quantum Dots ». Dans PHYSICS OF SEMICONDUCTORS : 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666394.

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Nomura, S. « Negatively charged excitons in a back-gated undoped heterostructure ». Dans PHYSICS OF SEMICONDUCTORS : 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994524.

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Tomimoto, Shinichi, Shinsuke Nozawa, Hiroyuki Kato, Michihiro Sano, Takahiro Matsumoto, Yasuaki Masumoto, Jisoon Ihm et Hyeonsik Cheong. « Optical electron spin orientation in Ga-doped and undoped ZnO films ». Dans PHYSICS OF SEMICONDUCTORS : 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666581.

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Lilly, M. P. « Weak localization of dilute 2D electrons in undoped GaAs heterostructures ». Dans PHYSICS OF SEMICONDUCTORS : 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994179.

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Eldridge, P. S., W. J. H. Leyland, J. D. Mar, P. G. Lagoudakis, R. Winkler, O. Z. Karimov, M. Henini et al. « The Absence Of The Rashba Spin-Splitting In Undoped Asymmetric Quantum Wells ». Dans PHYSICS OF SEMICONDUCTORS : 29th International Conference on the Physics of Semiconductors. AIP, 2010. http://dx.doi.org/10.1063/1.3295469.

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Ikonnikov, A. V. « Cyclotron Resonance Study of Doped and Undoped InAs/AlSb QW Heterostructures ». Dans PHYSICS OF SEMICONDUCTORS : 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994549.

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Harris, T. D., et J. I. Colonell. « Quantitative Fluorescence Determination of Impurities in Compound Semiconductors ». Dans Laser Applications to Chemical Analysis. Washington, D.C. : Optica Publishing Group, 1990. http://dx.doi.org/10.1364/laca.1990.tub1.

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The electrical behavior of compound semiconductors is governed by the combined effects of the stoichiometry and impurities. The determination of impurity concentration in undoped samples is a largely unsolved problem. This deficiency results from the high purity routinely achieved in these materials, typically 1-20 ppb total impurity concentration, less than the detection limit of the applicable methods, such as SIMS. Progress toward quantitative impurity determination has been achieved by employing electronic Raman scattering, but this method is applicable only to acceptor concentration determination in bulk undoped semi-insulating GaAs. Low temperature luminescence methods have long been employed for impurity identification, but no attempt to quantify luminescence in direct gap semiconductors has been published, despite considerable success employing quantitative luminescence in Si.
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Ozaki, N. « Magnetic Properties of undoped and N-doped Zn1−xCrxTe Grown by MBE ». Dans PHYSICS OF SEMICONDUCTORS : 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994130.

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Halas, N. J., R. A. Cheville, F. L. P. Chibante, T. R. Ohno et J. H. Weaver. « Carrier relaxation in undoped C60 solid films ». Dans OSA Annual Meeting. Washington, D.C. : Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.thdd4.

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We have performed what we believe to be the first time-resolved absorption studies of C60 solid films. The films were fabricated by the evaporation of highly purified C60 onto a sapphire substrate in UHV conditions (<10-10 Torr) at 550 degrees C. Measurements were performed using a CPM laser (620 nm, pulsewidth <100 fsec) in a standard pump-probe transmission geometry. The excitation wavelength corresponds to excitation of carriers across the HOMO-LUMO gap of solid C60, a normally symmetry-forbidden transition in the isolated molecule. A nonexponential decay of optical transmission was observed on a picosecond timescale, with no subpicosecond transient characteristic of hot carrier thermalization. The nonexponential decay of the transmission signal is indicative of a geminate carrier recombination process, usually seen in amorphous semiconductors. The optical absorption spectrum of C60 also possesses an exponential rise at the band edge (Urbach tail), also characteristic of amorphous semiconductors. The observed carrier recombination can be theoretically described by a diffusion/neutralization model from which a diffusion length can be obtained. The theoretically obtained mobility is in agreement with conductivity measurements for undoped 60C films on insulating substrates.
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Rapports d'organisations sur le sujet "Undoped Semiconductors"

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Lu, Tzu-Ming, et Lisa A. Tracy. Artificial Graphene in Undoped Semiconductor Heterostructures. Office of Scientific and Technical Information (OSTI), septembre 2016. http://dx.doi.org/10.2172/1562617.

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