Littérature scientifique sur le sujet « Ultrafast spintronics »
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Articles de revues sur le sujet "Ultrafast spintronics"
Polley, Debanjan, Akshay Pattabi, Jyotirmoy Chatterjee, Sucheta Mondal, Kaushalya Jhuria, Hanuman Singh, Jon Gorchon et Jeffrey Bokor. « Progress toward picosecond on-chip magnetic memory ». Applied Physics Letters 120, no 14 (4 avril 2022) : 140501. http://dx.doi.org/10.1063/5.0083897.
Texte intégralSeifert, Tom S., Liang Cheng, Zhengxing Wei, Tobias Kampfrath et Jingbo Qi. « Spintronic sources of ultrashort terahertz electromagnetic pulses ». Applied Physics Letters 120, no 18 (2 mai 2022) : 180401. http://dx.doi.org/10.1063/5.0080357.
Texte intégralEl-Ghazaly, Amal, Jon Gorchon, Richard B. Wilson, Akshay Pattabi et Jeffrey Bokor. « Progress towards ultrafast spintronics applications ». Journal of Magnetism and Magnetic Materials 502 (mai 2020) : 166478. http://dx.doi.org/10.1016/j.jmmm.2020.166478.
Texte intégralAfanasiev, Dmytro, et Alexey V. Kimel. « Ultrafast push for counterintuitive spintronics ». Nature Materials 22, no 6 (juin 2023) : 673–74. http://dx.doi.org/10.1038/s41563-023-01554-9.
Texte intégralWalowski, Jakob, et Markus Münzenberg. « Perspective : Ultrafast magnetism and THz spintronics ». Journal of Applied Physics 120, no 14 (14 octobre 2016) : 140901. http://dx.doi.org/10.1063/1.4958846.
Texte intégralIvanov, B. A. « Spin Dynamics for Antiferromagnets and Ultrafast Spintronics ». Journal of Experimental and Theoretical Physics 131, no 1 (juillet 2020) : 95–112. http://dx.doi.org/10.1134/s1063776120070079.
Texte intégralZhang, Yue, Xueqiang Feng, Zhenyi Zheng, Zhizhong Zhang, Kelian Lin, Xiaohan Sun, Guanda Wang et al. « Ferrimagnets for spintronic devices : From materials to applications ». Applied Physics Reviews 10, no 1 (mars 2023) : 011301. http://dx.doi.org/10.1063/5.0104618.
Texte intégralMatsubara, Masakazu. « Ultrafast Optical Control of Magnetic Interactions in Carrier-Density-Controlled Ferromagnetic Semiconductors ». Applied Sciences 9, no 5 (6 mars 2019) : 948. http://dx.doi.org/10.3390/app9050948.
Texte intégralTelegin, Andrei, et Yurii Sukhorukov. « Magnetic Semiconductors as Materials for Spintronics ». Magnetochemistry 8, no 12 (29 novembre 2022) : 173. http://dx.doi.org/10.3390/magnetochemistry8120173.
Texte intégralMashkovich, Evgeny A., Kirill A. Grishunin, Roman M. Dubrovin, Anatoly K. Zvezdin, Roman V. Pisarev et Alexey V. Kimel. « Terahertz light–driven coupling of antiferromagnetic spins to lattice ». Science 374, no 6575 (24 décembre 2021) : 1608–11. http://dx.doi.org/10.1126/science.abk1121.
Texte intégralThèses sur le sujet "Ultrafast spintronics"
Battiato, Marco. « Superdiffusive Spin Transport and Ultrafast Magnetization Dynamics : Femtosecond spin transport as the route to ultrafast spintronics ». Doctoral thesis, Uppsala universitet, Materialteori, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-205265.
Texte intégralGuillemard, Charles. « Half-metal magnets Heusler compounds for spintronics ». Thesis, Université de Lorraine, 2019. http://www.theses.fr/2019LORR0110.
Texte intégralImprovements in thin film elaboration methods and a deeper understanding of condensed matter physics have led to new exciting phenomena in spin electronics (spintronics). In particular, magnetization reversal by spin-orbit and spin-transfer torque as well as the development of spin waves based devices have placed the Gilbert magnetic damping coefficient as a key parameter for future data storage and information processing technologies. The prediction of ultralow magnetic damping in Co2MnZ Heusler half-metal magnets is explored in this study and the damping response is shown to be linked to the underlying electronic structure. By substitution of the Z element in high quality Co2MnZ (Z=Al, Si, Ga, Ge, Sn and Sb) epitaxial thin films grown by molecular beam epitaxy, electronic properties such as the minority-spin band gap, Fermi energy position in the band gap, and spin polarization can be tuned and the consequences for magnetization dynamics analyzed. Experimental results allow us to directly explore the interplay of spin polarization, spin gap and Fermi energy position, with the magnetic damping obtained in these films (together with predictions from ab initio calculations). The ultralow magnetic damping coefficients measured in the range from 4.1 x10-4 to 9 x10-4 for Co2MnSi, Co2MnGe, Co2MnSn and Co2MnSb are the lowest values ever reported in conductive layers and offer a clear experimental demonstration of theoretical predictions on half metal magnetic Heusler compounds. Then, the relation between the Gilbert damping and the ultrafast demagnetization time in quaternary Co2MnSixAl1-x compounds with a tunable spin polarization is analyzed. This way, it is possible to confront theoretical models unifying those two quantities that live in different timescales. Finally, structural and magnetic properties of Mn3Ga/Co2YZ Heusler superlattices are investigated in order to combine ultralow Gilbert damping coefficient, minority spin band gap and perpendicularly magnetized heterostructures, another requirement for low energy consumption devices. Through the present work, we aim to prove that Heusler compounds provide an excellent playground to study fundamental magnetism and offer a pathway for future materials design
Mohamad, Haidar Jawad. « Ultrafast optical measurements of spin-polarized electron dynamics in nanostructured magnetic materials ». Thesis, University of Exeter, 2015. http://hdl.handle.net/10871/18425.
Texte intégralGuillemard, Charles. « Half-metal magnets Heusler compounds for spintronics ». Electronic Thesis or Diss., Université de Lorraine, 2019. http://www.theses.fr/2019LORR0110.
Texte intégralImprovements in thin film elaboration methods and a deeper understanding of condensed matter physics have led to new exciting phenomena in spin electronics (spintronics). In particular, magnetization reversal by spin-orbit and spin-transfer torque as well as the development of spin waves based devices have placed the Gilbert magnetic damping coefficient as a key parameter for future data storage and information processing technologies. The prediction of ultralow magnetic damping in Co2MnZ Heusler half-metal magnets is explored in this study and the damping response is shown to be linked to the underlying electronic structure. By substitution of the Z element in high quality Co2MnZ (Z=Al, Si, Ga, Ge, Sn and Sb) epitaxial thin films grown by molecular beam epitaxy, electronic properties such as the minority-spin band gap, Fermi energy position in the band gap, and spin polarization can be tuned and the consequences for magnetization dynamics analyzed. Experimental results allow us to directly explore the interplay of spin polarization, spin gap and Fermi energy position, with the magnetic damping obtained in these films (together with predictions from ab initio calculations). The ultralow magnetic damping coefficients measured in the range from 4.1 x10-4 to 9 x10-4 for Co2MnSi, Co2MnGe, Co2MnSn and Co2MnSb are the lowest values ever reported in conductive layers and offer a clear experimental demonstration of theoretical predictions on half metal magnetic Heusler compounds. Then, the relation between the Gilbert damping and the ultrafast demagnetization time in quaternary Co2MnSixAl1-x compounds with a tunable spin polarization is analyzed. This way, it is possible to confront theoretical models unifying those two quantities that live in different timescales. Finally, structural and magnetic properties of Mn3Ga/Co2YZ Heusler superlattices are investigated in order to combine ultralow Gilbert damping coefficient, minority spin band gap and perpendicularly magnetized heterostructures, another requirement for low energy consumption devices. Through the present work, we aim to prove that Heusler compounds provide an excellent playground to study fundamental magnetism and offer a pathway for future materials design
Kaushalya. « Ultrafast manipulation of magnetization using on-chip THz ». Electronic Thesis or Diss., Université de Lorraine, 2021. http://www.theses.fr/2021LORR0173.
Texte intégralThe need for memory storage devices has skyrocketed over the last few decades especially after the development of the internet. This need has reached enormous heights in the past two years, soon after the pandemic due to COVID-19. Hard disk drives (HDDs) are known to have the potential to meet up with the high-density data storage demands. This thesis deals with one of the major challenges faced within the spintronic community to improve the speed and the energy consumption of memory devices.The speed of operation during the writing of a magnetic bit depends on the magnetization switching mechanism employed. The switching mechanism is itself dependent on the intrinsic magnetic properties of the sample and the externally induced excitation that drives the reversal of the magnetic bit 1. In this thesis, we will focus on the use of spin-orbit torque (SOT) excitations to drive the reversal, which is a relatively new but fast and energy-efficient approach in comparison with other state-of-the-art methods.The typical speed of magnetization reversal using SOTs is in the range of few nanoseconds, far slower than the picosecond-long switching that is possible with charge-based memory devices2. In fact, a record reversal speed with electrical pulses as short as ~200ps was reported by Garello et. al., 3 in 2011 using SOTs. This thesis reports further efforts to speed up the magnetization reversal by almost 2 orders of magnitude by exploiting such SOTs. To this aim, THz electrical pulses were generated via the use Auston photoconductive switches. We demonstrate that a single 6ps wide electrical pulse can induce a SOT to a 1nm thin Co ferromagnetic layer and result in a full magnetization reversal. A systematic study to understand SOTs in the picosecond time regime is also undertaken via using different magnetic nanostructures.In magnetic memory devices, a “read-head” is used to read the stored information in the device. Typically, in spintronic devices, giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) based read heads are used for such operations. In this thesis, we also report on the attempts of developing a GMR sensor working in the THz regime.To undertake the aforementioned studies, a pump-probe optical and optoelectrical experimental setup has also been built and a detailed report of the same is also provided in the thesis
Chirac, Théophile. « New spintronic components based on antiferromagnetic materials ». Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS482.
Texte intégralCurrent magnetic memory devices are reaching their physical limits in terms of stability, speed and power consumption as the race to miniaturization intensifies. The emergent research field of spintronics studies the collective behavior of spins in matter and their interplay at interfaces, to find new avenues in terms of materials, architectures and stimulation sources. A particularly promising group of materials are the antiferromagnets. These abundant magnetically ordered materials are naturally stable, robust, ultra-fast and compatible with insulator electronics. Indeed, most transition metal oxide compounds are antiferromagnetic insulators, have resonance in the terahertz range and flop fields of tens of teslas. They can also be semi-metals, metals, semiconductors, superconductors or multiferroics. This thesis focuses on two antiferromagnets: nickel oxide (NiO) and bismuth ferrite (BiFeO₃). NiO is the archetypical antiferromagnet at ambient temperature with a simple crystalline structure. Using dynamical atomistic simulations, I show that this compound can be the elemental brick of a three state memory device controlled by currently available pulses of spin currents, with a picosecond response time. The simulations also explain the formation of chiral structures in BiFeO₃, a ferroelectric antiferromagnet with magnetoelectric coupling between the two orders. In a second part, antiferromagnetic domains in BiFeO₃ are experimentally observed using second harmonic generation of light, with a sub-micron spatial resolution. Antiferromagnetic domains of BiFeO₃ are then excited by an intense femtosecond laser pulse, and the dynamics of the two coupled orders (antiferromagnetism and ferroelectricity) is studied with a sub-picosecond time resolution. Finally, the injection of spin current in an antiferromagnet such as BiFeO₃ or NiO is envisioned by characterizing the spin bursts generated by ultrafast laser-induced demagnetization of adjacent ferromagnetic layers
Peng, Yi. « Single laser pulse switching in RE-based multilayers without Gd ». Electronic Thesis or Diss., Université de Lorraine, 2023. http://www.theses.fr/2023LORR0297.
Texte intégralThe emerging field of ultrafast spin electronics integrates the ideas and concepts of magneto-optics and opto-magnetism with spin transport phenomena, supplemented with the possibilities offered by photonics for ultrafast low-dissipative manipulation and transport of information. The discovery of all-optical ultra-fast deterministic magnetization switching has opened up new possibilities for manipulating magnetization in devices using femtosecond laser pulses. HI-AOS is predominantly observed in Gadolinium-based Rare Earth (RE) / Transition Metals (TM) ferrimagnetic alloys or multilayers. Notably, it has recently been witnessed in materials without Gadolinium, such as the ferrimagnet Mn2RuxGa and the ferrimagnetic multilayer [Tb/Co]N. In this work, we tried to find new materials that can show single-shot helicity-independent all-optical switching (HI-AOS) and to understand the switching behavior, fundamental mechanism, and switching process in different materials and structures. Therefore, three main parts of work have been done in this thesis:• Study the CoLu alloy, where Lu has the same properties as Gd with small spin-orbit coupling (L=0). Perpendicular magnetic anisotropy can be obtained in 3 nm of Co100-xLux alloy with x varies between 22% and 42%. Besides, single-shot switching measurements in full film and 3 μm dots array show that nodeterministic switching of the magnetization can be observed. The results can be attributed to the low magnetization and, consequently, too-small angular momentum carried by the Lu element by atomistic simulations. • Single-shot switching in [RE/TM]N multilayers, where the RE layer could be rare-earth metal with larger spin-orbit coupling such as Tb and Dy, and their alloy with transition metals. Starting with [Tb/Co]5 and [Tb/Fe]4 multilayers, the single-shot switching has been extended to various multilayers, bilayers, and trilayers, making it a general phenomenon in Tb- and Dy-based multilayers, which have sperimagnetic properties coupled with transient metals. Interestingly, a complex structure of rings of opposite magnetization directions has been observed at high fluence. According to the pump-probe measurements,We tried to explain the switching mechanism and ring structures, which could be an in-plane reorientation precession mechanism. • Single-shot switching in [Co/Ho]N multilayers, which is a novel material system with the expectation of higher spin-orbit coupling compared to Tb and Dy. Surprisingly, even though the spin-orbit coupling in Ho ( as it is in Tb and Dy) is larger than that of in Gd, which should increase the dissipation of angular momentum to the lattice, the pulse duration/fluence state diagram is close to the Gd-based systems. Studying this new system could help bridge the single pulse reversal processes observed, on the one hand, in Gd-based, on the other hand, in the Tb or Dy-based heterostructures
Huang, Tianxun. « A study about the behavior and mechanism of all-optical switching ». Electronic Thesis or Diss., Université de Lorraine, 2023. http://www.theses.fr/2023LORR0054.
Texte intégralTo meet the future needs of high density, low power consumption, and fast rate of magnetic storage technology, it is one of the urgent tasks in the field of spintronics to develop a new method of magnetization manipulation with shorter magnetization reversal time and lower energy consumption. Ultrashort pulsed laser technology offers a new way to manipulate spins in femtosecond timescale, sparking great research interest in both academia and industry. Two methods of controlling magnetization by laser, all-optical helicity-dependent switching (AO-HDS) and all-optical helicity-independent switching (AO-HIS), are discovered recently and raise numerous discussion on their mechanisms, behaviors and applications. However, the origin of two phenomena is still largely debated, which will be the main task of this thesis. A Co/Pt multilayered stack exhibiting AO-HDS phenomenon is employed to study the mechanism of AO-HDS. The film is fabricated to a 10x10 um^2 magnetic square on a Hall bar and its switching behavior is observed optically and electrically at different timescale. The switching of this magnetic unit can be demonstrated with ten consecutive circularly polarized laser pulses. The spin dynamics of AO-HDS can be understood in terms of the magnetic domain thermal nucleation and domain wall propagation driven bythermal gradient. For the past years, AO-HIS has never been observed in other rare-earth transition-metal alloys except when the rare-earth is Gd. To study the speciality of Gd, a complete series of GdRCo (R represents Tb, Dy or Ho) alloys is grown and investigated, it is demonstrated that AO-HIS can be observed when the composition of R is as low as 1.5% near the compensation point of ferrimagnet. State diagrams describing the key parameters depending on the element concentrations and spin dynamics in various samples are studied, providing some suggestion on the origin of AO-HIS and its engineering application in the future
Saidl, Vít. « Studium magneticky uspořádaných materiálů pomocí optické spektroskopie ». Master's thesis, 2013. http://www.nusl.cz/ntk/nusl-328256.
Texte intégral(9026657), Bradlee K. Beauchamp. « Synthetic Ferrimagnets and Magneto-Plasmonic Structures for Ultrafast Magnetization Switching ». Thesis, 2020.
Trouver le texte intégralChapitres de livres sur le sujet "Ultrafast spintronics"
Tsukamoto, Arata, et Theo Rasing. « Ultrafast Light-Induced Spin Reversal in Amorphous Rare Earth-Transition Metal Alloy Films ». Dans Spintronics for Next Generation Innovative Devices, 237–48. Chichester, UK : John Wiley & Sons, Ltd, 2016. http://dx.doi.org/10.1002/9781118751886.ch13.
Texte intégralSuemasu, Takashi. « Ultrafast CIDWM in Mn4N strips ». Dans Rare-earth-free Ferrimagnetic Mn4N Spintronics, 4–1. IOP Publishing, 2024. http://dx.doi.org/10.1088/978-0-7503-5477-6ch4.
Texte intégralSuemasu, Takashi. « Ultrafast CIDWM in compensated Mn4N strips ». Dans Rare-earth-free Ferrimagnetic Mn4N Spintronics, 7–1. IOP Publishing, 2024. http://dx.doi.org/10.1088/978-0-7503-5477-6ch7.
Texte intégralPal, Debarati, et Swapnil Patil. « Advancement of Topological Nanostructures for Various Applications ». Dans Advanced Materials and Nano Systems : Theory and Experiment (Part-1), 190–212. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/9789815050745122010013.
Texte intégralActes de conférences sur le sujet "Ultrafast spintronics"
Turchinovich, Dmitry. « Ultrafast terahertz spintronics (Conference Presentation) ». Dans Spintronics X, sous la direction de Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe et Manijeh Razeghi. SPIE, 2017. http://dx.doi.org/10.1117/12.2274758.
Texte intégralSeifert, Tom Sebastian. « Exploiting ultrafast spintronics for terahertz photonics ». Dans Spintronics XIV, sous la direction de Henri-Jean M. Drouhin, Jean-Eric Wegrowe et Manijeh Razeghi. SPIE, 2021. http://dx.doi.org/10.1117/12.2596230.
Texte intégralBratschitsch, Rudolf. « Ultrafast spintronic THz emitters (Conference Presentation) ». Dans Spintronics XV, sous la direction de Henri-Jean M. Drouhin, Jean-Eric Wegrowe et Manijeh Razeghi. SPIE, 2022. http://dx.doi.org/10.1117/12.2633298.
Texte intégralJung, Natalie, Markus Lindemann, Tobias Pusch, Rainer Michalzik, Martin R. Hofmann et Nils C. Gerhardt. « Integrated spin-lasers for ultrafast polarization modulation ». Dans Spintronics XIV, sous la direction de Henri-Jean M. Drouhin, Jean-Eric Wegrowe et Manijeh Razeghi. SPIE, 2021. http://dx.doi.org/10.1117/12.2594560.
Texte intégralManfredi, Giovanni, Paul-Antoine Hervieux et Jerome Hurst. « Ultrafast spin current generation in ferromagnetic thin films ». Dans Spintronics XI, sous la direction de Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe et Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2319953.
Texte intégralWilson, Richard, Yang Yang, Jon Gorchon, Charles-Henri Lambert, Sayeef Salahuddin et Jeffrey Bokor. « Ultrafast electrical switching of ferrimagnetic metals (Conference Presentation) ». Dans Spintronics X, sous la direction de Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe et Manijeh Razeghi. SPIE, 2017. http://dx.doi.org/10.1117/12.2272454.
Texte intégralLindemann, Markus, Natalie Jung, Markus Burghard, Tobias Pusch, Gaofeng Xu, Igor Zutic, Dan Birkedal, Rainer Michalzik, Martin R. Hofmann et Nils C. Gerhardt. « Intensity and polarization dynamics in ultrafast birefringent spin-VCSELs ». Dans Spintronics XIII, sous la direction de Henri-Jean M. Drouhin, Jean-Eric Wegrowe et Manijeh Razeghi. SPIE, 2020. http://dx.doi.org/10.1117/12.2567628.
Texte intégralRazdolski, Ilya, Alexandr Alekhin, Nikita Ilin, Jan P. Meyburg, Vladimir Roddatis, Detlef Diesing, Uwe Bovensiepen et Alexey Melnikov. « Non-equilibrium magnetic effects at interfaces for ultrafast dynamics (Conference Presentation) ». Dans Spintronics X, sous la direction de Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe et Manijeh Razeghi. SPIE, 2017. http://dx.doi.org/10.1117/12.2274750.
Texte intégralBratschitsch, Rudolf. « Ultrafast valley dynamics in atomically thin transition metal dichalcogenides (Conference Presentation) ». Dans Spintronics IX, sous la direction de Henri-Jean Drouhin, Jean-Eric Wegrowe et Manijeh Razeghi. SPIE, 2016. http://dx.doi.org/10.1117/12.2239329.
Texte intégralDürr, Hermann A. « Tracking the ultrafast spin-lattice motion in FePt nanoparticles (Conference Presentation) ». Dans Spintronics IX, sous la direction de Henri-Jean Drouhin, Jean-Eric Wegrowe et Manijeh Razeghi. SPIE, 2016. http://dx.doi.org/10.1117/12.2239423.
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