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Auteur : Grafiati
Publié le 7 septembre 2023

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1

Maevskaya, Maria V., Aida V. Rudakova, Alexandra V. Koroleva, Aleksandr S. Sakhatskii, Alexei V. Emeline et Detlef W. Bahnemann. « Effect of the Type of Heterostructures on Photostimulated Alteration of the Surface Hydrophilicity : TiO2/BiVO4 vs. ZnO/BiVO4 Planar Heterostructured Coatings ». Catalysts 11, no 12 (23 novembre 2021) : 1424. http://dx.doi.org/10.3390/catal11121424.

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Here, we report the results of comparative studies of the photostimulated hydrophilic behavior of heterostructured TiO2/BiVO4 and ZnO/BiVO4, and monocomponent TiO2 and ZnO nanocoating surfaces. The chemical composition and morphology of the synthesized nanocoatings were characterized by XPS, SEM, and AFM methods. The electronic energy structure of the heterostructure components (band gap, top of the valence band, bottom of the conduction band, and Fermi level position) was determined on the basis of experimental results obtained by XPS, UV-V absorption spectroscopy and Kelvin probe methods. According to their electronic energy structure, the ZnO/BiVO4 and TiO2/BiVO4 heterostructures correspond to type I and type II heterostructures, respectively. The difference in the type of heterostructures causes the difference in the charge transfer behavior at heterojunctions: the type II TiO2/BiVO4 heterostructure favors and the type I ZnO/BiVO4 heterostructure prevents the photogenerated hole transfer from BiVO4 to the outer layer of the corresponding metal oxide. The results of the comparative studies show that the interaction of the photogenerated holes with surface hydroxy-hydrated multilayers is responsible for the superhydrophilic surface conversion accompanying the increase of the surface free energy and work function. The formation of the type II heterostructure leads to the spectral sensitization of the photostimulated surface superhydrophilic conversion.
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Bhardwaj, Garima, Sandhya K., Richa Dolia, M. Abu-Samak, Shalendra Kumar et P. A. Alvi. « A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments ». Bulletin of Electrical Engineering and Informatics 7, no 1 (1 mars 2018) : 35–41. http://dx.doi.org/10.11591/eei.v7i1.872.

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In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 µm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 µm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.
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Behara, Dilip Kumar, Jalajakshi Tammineni et Mukkara Sudha Maheswari. « TiO2/ZnO : Type-II Heterostructures for electrochemical crystal violet dye degradation studies ». Macedonian Journal of Chemistry and Chemical Engineering 39, no 2 (26 octobre 2020) : 217. http://dx.doi.org/10.20450/mjcce.2020.2058.

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Semiconductor nanomaterials with proper band edge alignments forming “heterostructure” assemblies have significant importance in water splitting, dye degradation, and other electrochemical studies. The formed heterojunction between material phases facilitates fast charge carrier transport and, thereby, improves electrochemical performance in associated processes. Herein, we report a type-II heterostructure combining TiO2 and ZnO nanomaterials for electrochemical crystal violet dye degradation studies. The rationale in choosing the above materials (TiO2, ZnO) in the present study includes stability, lack of toxicity, and high oxidation power, but they also facilitate fast charge carrier movements due to proper band edge alignments, forming a type-II heterostructure assembly. Cyclic voltammetry, combined with ultraviolet-visible analysis, was used to identify the cathodic and anodic peak currents and trace the exact mechanism of dye degradation. The electro-catalytic performance of TiO2/ZnO heterostructured materials fabricated on titania (Ti) substrate show higher performance, in comparison to all individual material interfaces, due to synergistic interaction and synchronized charge transport.
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Li, Jiayi, Yanming Lin, Minjie Zhang, Ying Peng, Xinru Wei, Zhengkun Wang, Zhenyi Jiang et Aijun Du. « Ferroelectric polarization and interface engineering coupling of Z-scheme ZnIn2S4/α-In2Se3 heterostructure for efficient photocatalytic water splitting ». Journal of Applied Physics 133, no 10 (14 mars 2023) : 105702. http://dx.doi.org/10.1063/5.0136862.

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It is of great significance to design an efficient heterostructure for photocatalytic hydrogen production to solve the energy shortage and environmental crisis. In this letter, we investigate the structure, electron of interface, optical, charge transfer, and photocatalytic mechanism of three different ZnIn2S4/α-In2Se3 heterostructures by hybrid density functional calculation. It is interesting that the presence of an external electric field not only can change the bandgap but also can modulate the band alignment type. Among them, heterostructure A belongs to type II heterostructure, and heterostructure B and C belong to a Z-scheme heterostructure. Especially in heterostructure C, the electrons deposited on CBM of a ZnIn2S4 monolayer will play an important role in the hydrogen production process. Meanwhile, the small bandgap of ZnIn2S4/α-In2Se3 Z-scheme heterostructures enables it to obtain a wide light absorption range. Therefore, this study contributes to the design of a novel and potential Z-scheme heterostructure photocatalyst with broad application prospects in both electronic and optoelectronic fields.
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Zakharova, A., et V. Gergel. « Resonant tunneling in type II heterostructures ». Solid State Communications 96, no 4 (octobre 1995) : 209–13. http://dx.doi.org/10.1016/0038-1098(95)00435-1.

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Schäfer, F., M. Stein, J. Lorenz, F. Dobener, C. Ngo, J. T. Steiner, C. Fuchs et al. « Gain recovery dynamics in active type-II semiconductor heterostructures ». Applied Physics Letters 122, no 8 (20 février 2023) : 082104. http://dx.doi.org/10.1063/5.0128777.

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Type-II heterostructures as active layers for semiconductor laser devices combine the advantages of a spectrally broad, temperature stable, and efficient gain with the potential for electrical injection pumping. Their intrinsic charge carrier relaxation dynamics limit the maximum achievable repetition rates beyond any constraints of cavity design or heat dissipation. Of particular interest are the initial build up of gain after high-energy injection and the gain recovery dynamics following depletion through a stimulated emission process. The latter simulates the operation condition of a pulsed laser or semiconductor optical amplifier. An optical pump pulse injects hot charge carriers that eventually build up broad spectral gain in a model (Ga,In)As/GaAs/Ga(As,Sb) heterostructure. The surplus energies of the optical pump mimic the electron energies typical for electrical injection. Subsequently, a second laser pulse tuned to the broad spectral gain region depletes the population inversion through stimulated emission. The spectrally resolved nonlinear transmission dynamics reveal gain recovery times as fast as 5 ps. These data define the intrinsic limit for the highest laser repetition rate possible with this material system in the range of 100 GHz. The experimental results are analyzed using a microscopic many-body theory identifying the origins of the broad gain spectrum.
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Li, Honglin, Yuting Cui, Haijun Luo et Wanjun Li. « The strain induced type-II band re-alignment of blue phosphorus-GeX (X = C/H/Se) heterostructures ». European Physical Journal Applied Physics 89, no 1 (janvier 2020) : 10103. http://dx.doi.org/10.1051/epjap/2020190325.

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Efforts to efficiently use of the next generation 2-dimension (2D) structured monolayers is getting a lot of attention for their excellent properties recently. In this work, we composite the blue phosphorus (BP) and monolayer GeX (X = C/H/Se) via van der Waals force (vdW) interaction to obtain well defined type-II band alignment heterostructures. A systematic theoretic study is conducted to explore the interlayer coupling effects and the bands re-alignment of BP-GeX (X = C/H/Se) heterostructure after the strain imposed. To devise usable and efficient materials to degrade pollutant or used as a potential photovoltaic cell material, previous researches have proved that using 2D materials as components is a feasible way to obtain high performance. Here, we prudently present a comprehensive investigation on the BP and GeX (X = C/H/Se) with different twisted angles via first-principles calculation to lay a theoretical framework on the band alignment and carriers' separation. It reveals that the intrinsic electronic properties of BP and GeX are roughly preserved in the corresponding heterostructures. Upon strain applied, band alignment can be flexibly manipulated by varying external imposed strain. The heterostructures can maintain type-II character within a certain strain range, and thus the carriers are spatially separated to different portions. This work not only provides a deep insight into the construction of the heterostructure, but presents a new possibility to search for a flexible and feasible approach to promote its catalytic performance. The corresponding results would provide meaningful guidelines for designing 2D structure based novel materials.
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Ichimura, Masaya. « Calculation of Band Offsets of Mg(OH)2-Based Heterostructures ». Electronic Materials 2, no 3 (1 juillet 2021) : 274–83. http://dx.doi.org/10.3390/electronicmat2030019.

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The band alignment of Mg(OH)2-based heterostructures is investigated based on first-principles calculation. (111)-MgO/(0001)-Mg(OH)2 and (0001)-wurtzite ZnO/(0001)-Mg(OH)2 heterostructures are considered. The O 2s level energy is obtained for each O atom in the heterostructure supercell, and the band edge energies are evaluated following the procedure of the core-level spectroscopy. The calculation is based on the generalized gradient approximation with the on-site Coulomb interaction parameter U considered for Zn. For MgO/Mg(OH)2, the band alignment is of type II, and the valence band edge of MgO is higher by 1.6 eV than that of Mg(OH)2. For ZnO/Mg(OH)2, the band alignment is of type I, and the valence band edge of ZnO is higher by 0.5 eV than that of Mg(OH)2. Assuming the transitivity rule, it is expected that Mg(OH)2 can be used for certain types of heterostructure solar cells and dye-sensitized solar cells to improve the performance.
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Баженов, Н. Л., К. Д. Мынбаев, А. А. Семакова et Г. Г. Зегря. « Сравнительный анализ эффективности электролюминесценции в гетероструктурах I и II типа на основе узкозонных соединений А-=SUP=-III-=/SUP=-B-=SUP=-V-=/SUP=- ». Физика и техника полупроводников 56, no 5 (2022) : 477. http://dx.doi.org/10.21883/ftp.2022.05.52349.9805.

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A detailed analysis of the mechanisms of radiative and Auger recombination in type I and II heterostructures based on narrow-gap AIIIBV materials is presented. It is shown that the presence of a heterointerface fundamentally changes the nature of these recombination processes differently, depending on the type of heterojunction. Results of our study of the electroluminescence of type I and II LED heterostructures based on InAs(Sb)/InAsSbP quantum wells are presented. It is shown that the increase in relative efficiency of radiative recombination in type II heterostructures due to suppression of Auger recombination contributes to generation of stimulated emission in these heterostructures at low temperatures (4.2−70K).
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Liu, Zixiang, et Zhiguo Wang. « Electronic Properties of MTe2/AsI3(M=Mo and W) Van der Waals Heterostructures ». MATEC Web of Conferences 380 (2023) : 01011. http://dx.doi.org/10.1051/matecconf/202338001011.

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Two dimensional (2D) materials with unique physical or chemical prperties has triggered worldwide interest in the fields of material science, condensed matter physics, and devices physics. Vertically stacking different 2D materials enables the creation of a large variety of van der Waals heterostructures. The van der Waals heterostructures robust the merits of the 2D materials electronic prperties. Using density functional theory calculations, the electronic structure of MTe2/AsI3(M=Mo and W) Van der Waals heterostructures are investigated in this work. The results show by stacking MTe2(M=Mo and W) and AsI3 vertically, a strongly binding vdW heterostructure with a type-II band alignment can be formed, which gives expectation of high multifunctional electronic performance. This theoretical study provides vital insights of 2D materials and their heterostructures which could be potential candidates for future nanoelectronic applications.
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11

Schlichenmaier, C., H. Grüning, A. Thränhardt, P. J. Klar, B. Kunert, K. Volz, W. Stolz et al. « Type I-type II transition in InGaAs–GaNAs heterostructures ». Applied Physics Letters 86, no 8 (21 février 2005) : 081903. http://dx.doi.org/10.1063/1.1870132.

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Ma, Zechen, Ruifeng Li, Rui Xiong, Yinggan Zhang, Chao Xu, Cuilian Wen et Baisheng Sa. « InSe/Te van der Waals Heterostructure as a High-Efficiency Solar Cell from Computational Screening ». Materials 14, no 14 (6 juillet 2021) : 3768. http://dx.doi.org/10.3390/ma14143768.

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Designing the electronic structures of the van der Waals (vdW) heterostructures to obtain high-efficiency solar cells showed a fascinating prospect. In this work, we screened the potential of vdW heterostructures for solar cell application by combining the group III–VI MXA (M = Al, Ga, In and XA = S, Se, Te) and elementary group VI XB (XB = Se, Te) monolayers based on first-principle calculations. The results highlight that InSe/Te vdW heterostructure presents type-II electronic band structure feature with a band gap of 0.88 eV, where tellurene and InSe monolayer are as absorber and window layer, respectively. Interestingly, tellurene has a 1.14 eV direct band gap to produce the photoexcited electron easily. Furthermore, InSe/Te vdW heterostructure shows remarkably light absorption capacities and distinguished maximum power conversion efficiency (PCE) up to 13.39%. Our present study will inspire researchers to design vdW heterostructures for solar cell application in a purposeful way.
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Shim, Moonsub, Hunter McDaniel et Nuri Oh. « Prospects for Strained Type-II Nanorod Heterostructures ». Journal of Physical Chemistry Letters 2, no 21 (13 octobre 2011) : 2722–27. http://dx.doi.org/10.1021/jz201111y.

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Jezewski, M., F. Mollot et R. Planel. « Photoinduced electric fields in type II heterostructures ». Applied Physics Letters 56, no 24 (11 juin 1990) : 2422–24. http://dx.doi.org/10.1063/1.102897.

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15

Liu, Congying, Zhenwei Wang, Wenqi Xiong, Hongxia Zhong et Shengjun Yuan. « Effect of vertical strain and in-plane biaxial strain on type-II MoSi2N4/Cs3Bi2I9 van der Waals heterostructure ». Journal of Applied Physics 131, no 16 (28 avril 2022) : 163102. http://dx.doi.org/10.1063/5.0080224.

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Construction of van der Waals heterostructures (vdWHs) from layered materials may form new types of optoelectronic devices with better performance compared to individual layers. Here, we investigate theoretically the structural stability, electronic properties, charge-transport mechanisms, and optical properties of two-dimensional (2D) MoSi2N4/Cs3Bi2I9 vdWHs by using the first-principles calculations. Our results demonstrate that the 2D MoSi2N4/Cs3Bi2I9 vdWHs possess a direct bandgap and type-II band alignment due to the built-in electric field induced by the electron transfer from MoSi2N4 to Cs3Bi2I9 layer, which can prevent photoinduced electrons and holes from recombination and thus enhance the carrier lifetime. Furthermore, the optical absorption of the heterostructure is enhanced in the visible and ultraviolet region, and its electronic property is tunable under in-plane strains with a clear metal–semiconductor transition. Finally, we explore more A3B2X9/MA2Z4 vdWHs with A = Cs; B = In, Sb, Bi; and X = Cl, Br, I in A3B2X9 and M = Cr, Mo, Ti; A = Si; and Z = N, P in MA2Z4, and we find all three types of band alignments (type-I, type-II, and type-III). Our study provides a comprehensive theoretical understanding of the electronic and optical properties of perovskite-based heterostructures and indicates its potential applications in optoelectronic devices.
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Романов, В. В., Э. В. Иванов et К. Д. Моисеев. « Перестройка спектров электролюминесценции в гетероструктурах II типа n-InAs/n-InAsSbP ». Физика твердого тела 60, no 3 (2018) : 585. http://dx.doi.org/10.21883/ftt.2018.03.45565.268.

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AbstractSingle heterostructures of type II n ^+-InA s/n ^0-InAs_0.59Sb_0.16P_0.25, based on an intentionally undoped epitaxial layer with an electronic type of conductivity are obtained by metalorganic vapor phase epitaxy (MOVPE). In the heterostructure, a transition layer of modulated composition is formed near the heterointerface in the bulk of the quaternary solid solution. The existence of a radiative recombination channel due to the presence of localized hole states in quantum wells formed in the transition layer near the heterointerface is shown. It is demonstrated that the maximum of the intensity of the electroluminescence spectrum of the heterostructure under study is rearranged when a forward external bias is applied. The results of this study can be used in the development of tunable light-emitting diodes operating in the midinfrared range of 2–4 μm.
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Gui, Qingzhong, Zhen Wang, Chunmin Cheng, Xiaoming Zha, John Robertson, Sheng Liu, Zhaofu Zhang et Yuzheng Guo. « Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate ». Applied Physics Letters 121, no 21 (21 novembre 2022) : 211601. http://dx.doi.org/10.1063/5.0117263.

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Diamond has compelling advantages in power devices as an ultrawide-bandgap semiconductor. Using first-principles calculations, we systematically investigate the structural and electronic properties of hydrogen-terminated diamond (H-diamond) (111) van der Waals (vdW) heterostructures with graphite and hexagonal boron nitride (h-BN) layers. The graphite/H-diamond heterostructure forms a p-type ohmic contact and the p-type Schottky barrier decreases as the number of graphite layers increases. In contrast, the h-BN/H-diamond heterostructure exhibits semiconducting properties and a tunable type-II band alignment. Moreover, the charge transfer is concentrated at the interface with a large amount of charge accumulating on the C–H bonds on the H-diamond (111) surface, indicating the formation of a highly conductive two-dimensional hole gas (2DHG) layer. In a similar vein, the promising structural and electronic properties of graphite, h-BN, and H-diamond (111) in the graphite/h-BN/H-diamond (111) vdW heterostructure are well preserved upon their contact, while such heterostructure exhibits flexible band offset and Schottky contacts. These studies of interface engineering for H-diamond heterostructures are expected to advance the application of 2D materials in H-diamond field effect transistors, which is an important development in the design of surface transfer doping for 2DHG H-diamond devices.
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Duez, V., O. Vanbésien, D. Lippens, D. Vignaud, X. Wallart et F. Mollot. « Type II and mixed type I–II radiative recombinations in AlInAs–InP heterostructures ». Journal of Applied Physics 85, no 4 (15 février 1999) : 2202–6. http://dx.doi.org/10.1063/1.369517.

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Vasil’ev, Yu B., V. A. Solov’ev, B. Ya Mel’tser, A. N. Semenov, S. V. Ivanov, Yu L. Ivanov et P. S. Kop’ev. « Far infrared electroluminescence in cascade type-II heterostructures ». Journal of Experimental and Theoretical Physics Letters 75, no 8 (avril 2002) : 391–94. http://dx.doi.org/10.1134/1.1490006.

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Platonov, A. V., V. P. Kochereshko, E. L. Ivchenko, G. V. Mikhailov, D. R. Yakovlev, M. Keim, W. Ossau, A. Waag et G. Landwehr. « Giant Electro-optical Anisotropy in Type-II Heterostructures ». Physical Review Letters 83, no 17 (25 octobre 1999) : 3546–49. http://dx.doi.org/10.1103/physrevlett.83.3546.

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Wilson, B. A. « Recombination mechanisms in type II (GaAs/AlAs) heterostructures ». Journal of Vacuum Science & ; Technology B : Microelectronics and Nanometer Structures 6, no 4 (juillet 1988) : 1156. http://dx.doi.org/10.1116/1.584270.

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Suzuki, N., T. Anan, H. Hatakeyama et M. Tsuji. « Low resistance tunnel junctions with type-II heterostructures ». Applied Physics Letters 88, no 23 (5 juin 2006) : 231103. http://dx.doi.org/10.1063/1.2210082.

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McDaniel, Hunter, Philip Edward Heil, Cheng-Lin Tsai, Kyekyoon (Kevin) Kim et Moonsub Shim. « Integration of Type II Nanorod Heterostructures into Photovoltaics ». ACS Nano 5, no 9 (septembre 2011) : 7677–83. http://dx.doi.org/10.1021/nn2029988.

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Mendez, E. E., V. V. Kuznetsov, D. Chokin et J. D. Bruno. « Anomalous resonant-tunneling effect in type II heterostructures ». Physica E : Low-dimensional Systems and Nanostructures 6, no 1-4 (février 2000) : 335–38. http://dx.doi.org/10.1016/s1386-9477(99)00173-3.

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Mendez, E. E. « Interband magneto-tunneling in polytype type II heterostructures ». Surface Science 267, no 1-3 (janvier 1992) : 370–76. http://dx.doi.org/10.1016/0039-6028(92)91156-6.

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Guan, Yue, Xiaodan Li, Ruixia Niu, Ningxia Zhang, Taotao Hu et Liyao Zhang. « Tunable Electronic Properties of Type-II SiS2/WSe2 Hetero-Bilayers ». Nanomaterials 10, no 10 (15 octobre 2020) : 2037. http://dx.doi.org/10.3390/nano10102037.

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First-principle calculations based on the density functional theory (DFT) are implemented to study the structural and electronic properties of the SiS2/WSe2 hetero-bilayers. It is found that the AB-2 stacking model is most stable among all the six SiS2/WSe2 heterostructures considered in this work. The AB-2 stacking SiS2/WSe2 hetero-bilayer possesses a type-II band alignment with a narrow indirect band gap (0.154 eV and 0.738 eV obtained by GGA-PBE and HSE06, respectively), which can effectively separate the photogenerated electron–hole pairs and prevent the recombination of the electron–hole pairs. Our results revealed that the band gap can be tuned effectively within the range of elastic deformation (biaxial strain range from −7% to 7%) while maintaining the type-II band alignment. Furthermore, due to the effective regulation of interlayer charge transfer, the band gap along with the band offset of the SiS2/WSe2 heterostructure can also be modulated effectively by applying a vertical external electric field. Our results offer interesting alternatives for the engineering of two-dimensional material-based optoelectronic nanodevices.
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Mao, Bangyao, Xiurui Lv, Guijuan Zhao, Shu'an Xing, Jinjin Tang, Heyuan Huang, Guipeng Liu et Yong Gao. « Band alignment of monolayer MoS2/4H-SiC heterojunction via first-principles calculations and x-ray photoelectron spectroscopy ». Applied Physics Letters 121, no 5 (1 août 2022) : 051601. http://dx.doi.org/10.1063/5.0094338.

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2D/3D heterostructures have received extensive attention due to their unique structures and outstanding properties. In this work, the structural and electronic properties of monolayer MoS2/4H-SiC(Si-face) heterojunctions are systematically investigated through density functional theory calculation and experimental analysis. The calculated results show that the monolayer MoS2/4H-SiC heterostructure is a van der Waals heterojunction because of low formation energy and shows a type-II band alignment with a valence band offset of 1.43 eV. Then the type-II band alignment of the MoS2/4H-SiC heterostructure is verified by x-ray photoelectron spectroscopy. However, there is a deviation of 0.44 eV in the valence band offset between the calculated results and the experimental data, which may be caused by the underestimation of the bandgap by the Perdew–Burke–Ernzerhof method and the introduction of impurities at the interface. Our experimental results reveal the type of band alignment and the combination of the MoS2/4H-SiC heterostructure interface, which is an effective way to understand and design photocatalysts and electronic devices.
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Moiseev, Konstantin, Eduard Ivanov et Yana Parkhomenko. « Long-Wavelength Luminescence of InSb Quantum Dots in Type II Broken-Gap Heterostructure ». Electronics 12, no 3 (26 janvier 2023) : 609. http://dx.doi.org/10.3390/electronics12030609.

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The features of the electroluminescence spectra of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed into the p-n-InAs junction were studied. The luminescent properties of the heterostructures under a forward and reverse bias in the temperature range of 77–300 K were investigated as a function of the surface density of nano-objects buried in the narrow-gap matrix. When applying the reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojunction were observed at room temperature. The radiation, which corresponded to recombination transitions involving localized electron-hole states of the InSb quantum dots, was revealed determined and recorded at low temperatures.
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Finkman, E., et R. Planel. « Photoluminescence nonlinearities in mixed type I–type II quantum well heterostructures ». Applied Physics Letters 72, no 20 (18 mai 1998) : 2604–6. http://dx.doi.org/10.1063/1.121431.

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Shin, Ki Hoon, Min-Kyu Seo, Sangyeon Pak, A.-Rang Jang et Jung Inn Sohn. « Observation of Strong Interlayer Couplings in WS2/MoS2 Heterostructures via Low-Frequency Raman Spectroscopy ». Nanomaterials 12, no 9 (19 avril 2022) : 1393. http://dx.doi.org/10.3390/nano12091393.

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Van der Waals (vdW) heterostructures based on two-dimensional (2D) transition metal dichalcogenides (TMDCs), particularly WS2/MoS2 heterostructures with type-II band alignments, are considered as ideal candidates for future functional optoelectronic applications owing to their efficient exciton dissociation and fast charge transfers. These physical properties of vdW heterostructures are mainly influenced by the interlayer coupling occurring at the interface. However, a comprehensive understanding of the interlayer coupling in vdW heterostructures is still lacking. Here, we present a detailed analysis of the low-frequency (LF) Raman modes, which are sensitive to interlayer coupling, in bilayers of MoS2, WS2, and WS2/MoS2 heterostructures directly grown using chemical vapor deposition to avoid undesirable interfacial contamination and stacking mismatch effects between the monolayers. We clearly observe two distinguishable LF Raman modes, the interlayer in-plane shear and out-of-plane layer-breathing modes, which are dependent on the twisting angles and interface quality between the monolayers, in all the 2D bilayered structures, including the vdW heterostructure. In contrast, LF modes are not observed in the MoS2 and WS2 monolayers. These results indicate that our directly grown 2D bilayered TMDCs with a favorable stacking configuration and high-quality interface can induce strong interlayer couplings, leading to LF Raman modes.
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31

Yuan, Haidong, Jie Su, Jie Zhang, Zhenhua Lin, Jincheng Zhang, Jingjing Chang et Yue Hao. « Synergistic effect of covalent functionalization and intrinsic electric field on β-Ga2O3/graphene heterostructures ». Applied Physics Letters 121, no 23 (5 décembre 2022) : 231601. http://dx.doi.org/10.1063/5.0120142.

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β-Ga2O3/graphene heterostructure engineering has been regarded as an effective method to improve the optoelectronic performance of the β-Ga2O3 device. Here, hydrogenation/fluorination covalent functionalized graphene (HC/FC) was employed, and the synergistic effect of covalent functionalization and intrinsic electric field ( Ein) was introduced to further improve and understand the interfacial properties of the heterostructure. Under the covalent functionalization, type-II band alignment with UV-infrared dual-band absorption was found for β-Ga2O3/HC heterostructure, while reserved type-II band alignment with hole doping was realized for p-type β-Ga2O3/FC heterostructure. Upon introducing the synergistic effect of covalent functionalization and Ein for β-Ga2O3/hydro-fluorinated graphene (HCF) heterostructure, except for the above similar characters, both the band offsets and optical absorption are further enhanced in β-Ga2O3/HCF heterostructures. When the direction of intrinsic Ein points to the contact interface, the Fermi level of β-Ga2O3/F-HCF was much closer to the valence band of β-Ga2O3. It was thought that the synergistic effect of covalent functionalization and Ein was more beneficial to promote the application of p-type β-Ga2O3. These findings were deeply revealed by the band levels, electrostatic potential, and charge transfer introduced. Our results were expected to provide useful insight into the synergistic effect of covalent functionalization and intrinsic Ein as well as to enhance the application potential of β-Ga2O3/graphene-based optoelectronic devices.
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32

Wang, Nan, Yashu Li, Lin Wang et Xuelian Yu. « Photocatalytic Applications of ReS2-Based Heterostructures ». Molecules 28, no 6 (14 mars 2023) : 2627. http://dx.doi.org/10.3390/molecules28062627.

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ReS2-based heterostructures, which involve the coupling of a narrow band-gap semiconductor ReS2 with other wide band-gap semiconductors, have shown promising performance in energy conversion and environmental pollution protection in recent years. This review focuses on the preparation methods, encompassing hydrothermal, chemical vapor deposition, and exfoliation techniques, as well as achievements in correlated applications of ReS2-based heterostructures, including type-I, type-II heterostructures, and Z-scheme heterostructures for hydrogen evolution, reduction of CO2, and degradation of pollutants. We believe that this review provides an overview of the most recent advances to guide further research and development of ReS2-based heterostructures for photocatalysis.
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33

Ohno, H., L. Esaki et E. E. Mendez. « Optoelectronic devices based on type II polytype tunnel heterostructures ». Applied Physics Letters 60, no 25 (22 juin 1992) : 3153–55. http://dx.doi.org/10.1063/1.106726.

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Mikhailova, M. P., Yu P. Yakovlev, N. L. Bazhenov, V. A. Smirnov, Y. A. Berezovets, R. V. Parfeniev et K. D. Moiseev. « Interface-induced phenomena in type II antimonide–arsenide heterostructures ». IEE Proceedings - Optoelectronics 145, no 5 (1 octobre 1998) : 268–74. http://dx.doi.org/10.1049/ip-opt:19982305.

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Maksimov, A. A., I. I. Tartakovskiĭ, D. R. Yakovlev, M. Bayer et A. Waag. « Picosecond carrier relaxation in type-II ZnSe/BeTe heterostructures ». Journal of Experimental and Theoretical Physics Letters 83, no 4 (avril 2006) : 141–45. http://dx.doi.org/10.1134/s0021364006040035.

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Yakovlev, D. R., A. V. Platonov, V. P. Kochereshko, E. L. Ivchenko, M. Keim, W. Ossau, A. Waag et G. Landwehr. « Giant quantum-confined Pockels effect in type-II heterostructures ». Journal of Crystal Growth 214-215 (juin 2000) : 345–49. http://dx.doi.org/10.1016/s0022-0248(00)00105-6.

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Silva, Erasmo A. de Andrada e., et Giuseppe C. La Rocca. « Exciton luminescence polarization decay in type II semiconductor heterostructures ». Physica E : Low-dimensional Systems and Nanostructures 2, no 1-4 (juillet 1998) : 839–42. http://dx.doi.org/10.1016/s1386-9477(98)00171-4.

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Lugagne-Delpon, E., P. Voisin, J. P. Vieren, M. Voos, J. P. Andre et J. N. Patillon. « Investigations of MOCVD-grown AlInAs-InP type II heterostructures ». Semiconductor Science and Technology 7, no 4 (1 avril 1992) : 524–28. http://dx.doi.org/10.1088/0268-1242/7/4/014.

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Vorlícek, V., K. D. Moiseev, M. P. Mikhailova, Yu P. Yakovlev, E. Hulicius et T. Šimecek. « Raman Scattering Study of Type II GaInAsSb/InAs Heterostructures ». Crystal Research and Technology 37, no 2-3 (février 2002) : 259–67. http://dx.doi.org/10.1002/1521-4079(200202)37:2/3<259 ::aid-crat259>3.0.co;2-u.

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Kisin, Mikhail V., Mitra Dutta et Michael A. Stroscio. « ELECTRON-PHONON INTERACTIONS IN INTERSUBBAND LASER HETEROSTRUCTURES ». International Journal of High Speed Electronics and Systems 12, no 04 (décembre 2002) : 939–68. http://dx.doi.org/10.1142/s0129156402001873.

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We present a simple semianalytical model, which allows comprehensive analysis of the LO-phonon assisted electron relaxation in quantum well intersubband semiconductor lasers. Examples of scattering rate tailoring in type-I double quantum well heterostructures and analysis of the subband depopulation process in type-II heterostructures illustrate applicability of the model.
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41

Parkhomenko Ya. A., Ivanov E. V. et Moiseev K. D. « Radiative recombination in the InAs/InSb type II broken-gap heterojucntion with quantum dots at the interface ». Physics of the Solid State 65, no 4 (2023) : 628. http://dx.doi.org/10.21883/pss.2023.04.56006.11.

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The electroluminescent properties of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed at the interface of the p-n junction in InAs were studied. The features of the electroluminescence spectra depending on the surface density of nanoobjects at a broken-gap type II heterointerface were investigated both at forward and reverse bias. When applying a reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojunction were observed at room temperature. The radiation, which corresponded to recombination transitions involving localized states of InSb quantum dots, was recorded at low temperature. Keywords: quantum dots, electroluminescence, InAs, InSb, type II heterojunction.
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42

Ren, Da-Hua, Qiang Li, Kai Qian et Xing-Yi Tan. « Tunable electronic properties of GaS–SnS2 heterostructure by strain and electric field ». Chinese Physics B 31, no 4 (1 avril 2022) : 047102. http://dx.doi.org/10.1088/1674-1056/ac3a62.

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Vertically stacked heterostructures have received extensive attention because of their tunable electronic structures and outstanding optical properties. In this work, we study the structural, electronic, and optical properties of vertically stacked GaS–SnS2 heterostructure under the frame of density functional theory. We find that the stacked GaS–SnS2 heterostructure is a semiconductor with a suitable indirect band gap of 1.82 eV, exhibiting a type-II band alignment for easily separating the photo-generated carriers. The electronic properties of GaS–SnS2 heterostructure can be effectively tuned by an external strain and electric field. The optical absorption of GaS–SnS2 heterostructure is more enhanced than those of the GaS monolayer and SnS2 monolayer in the visible light region. Our results suggest that the GaS–SnS2 heterostructure is a promising candidate for the photocatalyst and photoelectronic devices in the visible light region.
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43

Soni, Udit, Anuushka Pal, Sajan Singh, Mona Mittal, Sushma Yadav, Ravikrishnan Elangovan et Sameer Sapra. « Simultaneous Type-I/Type-II Emission from CdSe/CdS/ZnSe Nano-Heterostructures ». ACS Nano 8, no 1 (5 décembre 2013) : 113–23. http://dx.doi.org/10.1021/nn404537s.

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Guo, Li, Kailai Zhang, Xuanxuan Han, Qiang Zhao, Danjun Wang et Feng Fu. « 2D In-Plane CuS/Bi2WO6 p-n Heterostructures with Promoted Visible-Light-Driven Photo-Fenton Degradation Performance ». Nanomaterials 9, no 8 (11 août 2019) : 1151. http://dx.doi.org/10.3390/nano9081151.

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Photo-Fenton degradation of pollutants in wastewater is an ideal choice for large scale practical applications. Herein, two-dimensional (2D) in-plane CuS/Bi2WO6 p-n heterostructures have been successfully constructed by an in situ assembly strategy and characterized using XRD, XPS, SEM/TEM, EDX, UV-Vis-DRS, PL, TR-PL, ESR, and VB-XPS techniques. The XPS and the TEM results confirm the formation of CuS/Bi2WO6 heterostructures. The as-constructed CuS/Bi2WO6 showed excellent absorption in visible region and superior charge carrier separation efficiency due to the formation of a type-II heterojunctions. Under visible light irradiation, 0.1% CuS/Bi2WO6 heterostructure exhibited the best photo-Fenton-like catalytic performance. The degradation efficiency of Rhodamine B (RhB, 20 mg·L−1) can reach nearly 100% within 25 min, the apparent rate constant (kapp/min−1) is approximately 40.06 and 3.87 times higher than that of pure CuS and Bi2WO6, respectively. The degradation efficiency of tetracycline hydrochloride (TC-HCl, 40mg·L−1) can reach 73% in 50 min by employing 0.1% CuS/Bi2WO6 heterostructure as a photo-Fenton-like catalyst. The promoted photo-Fenton catalytic activity of CuS/Bi2WO6 p-n heterostructures is partly ascribed to its low carriers recombination rate. Importantly, CuS in CuS/Bi2WO6 heterostructures is conducive to the formation of heterogeneous photo-Fenton catalytic system, in which Bi2WO6 provides a strong reaction site for CuS to avoid the loss of Cu2+ in Fenton reaction, resulting in its excellent stability and reusability. The possible photo-Fenton-like catalytic degradation mechanism of RhB and TC-HCl was also elucidated on the basis of energy band structure analysis and radical scavenger experiments. The present study provides strong evidence for CuS/Bi2WO6 heterostructures to be used as promising candidates for photo-Fenton treatment of organic pollutants.
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45

Пархоменко, Я. А., Э. В. Иванов et К. Д. Моисеев. « Излучательная рекомбинация в разъединенном гетеропереходе II типа InAs/InSb с квантовыми точками на интерфейсе ». Физика твердого тела 65, no 4 (2023) : 645. http://dx.doi.org/10.21883/ftt.2023.04.55304.11.

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The electroluminescent properties of narrow-gap type II InAs/InSb/InAs heterostructures containing a single layer of InSb quantum dots placed at the interface of the p-n junction in InAs were studied. The features of the electroluminescence spectra depending on the surface density of nanoobjects at a broken-gap type II heterointerface were investigated both at forward and reverse bias. When applying a reverse bias to the heterostructures under study, the suppression of negative interband luminescence and the dominance of interface recombination transitions at the InSb/InAs type II heterojunction were observed at room temperature. The radiation, which corresponded to recombination transitions involving localized states of InSb quantum dots, was recorded at low temperature.
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46

Cai, Yiwei, Zhengli Lu, Xin Xu, Yujia Gao, Tingting Shi, Xin Wang et Lingling Shui. « Bandgap Engineering of Two-Dimensional Double Perovskite Cs4AgBiBr8/WSe2 Heterostructure from Indirect Bandgap to Direct Bandgap by Introducing Se Vacancy ». Materials 16, no 10 (11 mai 2023) : 3668. http://dx.doi.org/10.3390/ma16103668.

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Heterostructures based on layered materials are considered next-generation photocatalysts due to their unique mechanical, physical, and chemical properties. In this work, we conducted a systematic first-principles study on the structure, stability, and electronic properties of a 2D monolayer WSe2/Cs4AgBiBr8 heterostructure. We found that the heterostructure is not only a type-II heterostructure with a high optical absorption coefficient, but also shows better optoelectronic properties, changing from an indirect bandgap semiconductor (about 1.70 eV) to a direct bandgap semiconductor (about 1.23 eV) by introducing an appropriate Se vacancy. Moreover, we investigated the stability of the heterostructure with Se atomic vacancy in different positions and found that the heterostructure was more stable when the Se vacancy is near the vertical direction of the upper Br atoms from the 2D double perovskite layer. The insightful understanding of WSe2/Cs4AgBiBr8 heterostructure and the defect engineering will offer useful strategies to design superior layered photodetectors.
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Guo, Zhonglu, Naihua Miao, Jian Zhou, Baisheng Sa et Zhimei Sun. « Strain-mediated type-I/type-II transition in MXene/Blue phosphorene van der Waals heterostructures for flexible optical/electronic devices ». Journal of Materials Chemistry C 5, no 4 (2017) : 978–84. http://dx.doi.org/10.1039/c6tc04349f.

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Development of novel van der Waals (vdW) heterostructures from various two-dimensional (2D) materials shows unprecedented possibilities by combining the advantageous properties of their building layers.
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Zhuang, Qianyong, Jin Li, Chaoyu He, Tao Ouyang, Chunxiao Zhang, Chao Tang et Jianxin Zhong. « Type-II lateral SnSe/GeTe heterostructures for solar photovoltaic applications with high efficiency ». Nanoscale Advances 3, no 12 (2021) : 3643–49. http://dx.doi.org/10.1039/d1na00209k.

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Zhang, Fang, Xianqi Dai, Liangliang Shang et Wei Li. « Tunable Band Alignment in the Arsenene/WS2 Heterostructure by Applying Electric Field and Strain ». Crystals 12, no 10 (30 septembre 2022) : 1390. http://dx.doi.org/10.3390/cryst12101390.

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Arsenene has received considerable attention because of its unique optoelectronic and nanoelectronic properties. Nevertheless, the research on van der Waals (vdW) heterojunctions based on arsenene has just begun, which hinders the application of arsenene in the optoelectronic and nanoelectronic fields. Here, we systemically predict the stability and electronic structures of the arsenene/WS2 vdW heterojunction based on first-principles calculations, considering the stacking pattern, electric field, and strain effects. We found that the arsenene/WS2 heterostructure possesses a type-II band alignment. Moreover, the electric field can effectively tune both the band gap and the band alignment type. Additionally, the band gap could be tuned effectively by strain, while the band alignment type is robust under strain. Our study opens up a new avenue for the application of ultrathin arsenene-based vdW heterostructures in future nano- and optoelectronics applications. Our study demonstrates that the arsenene/WS2 heterostructure offers a candidate material for optoelectronic and nanoelectronic devices.
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Dong, Fan, Zilin Ni, Peidong Li et Zhongbiao Wu. « A general method for type I and type II g-C3N4/g-C3N4 metal-free isotype heterostructures with enhanced visible light photocatalysis ». New Journal of Chemistry 39, no 6 (2015) : 4737–44. http://dx.doi.org/10.1039/c5nj00351b.

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Composite precursors were used to construct type I and type II g-C3N4/g-C3N4 metal-free isotype heterostructures based on different band-alignment patterns.
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