Littérature scientifique sur le sujet « TM POLARIZATION »

We propose and investigate a polarization-independent high-efficiency encapsulated subwavelength grating with a connecting layer in this paper. Numerical simulated method of rigorous coupled-wave analysis is adopted for optimization. Based on the simulated precise results, a simplified modal method is used to give perspicuous physical propagating fundamentals and explain wideband performance in the grating, where the coupled efficiencies by means of the simplified modal method are to be in conformity with the calculated values of the rigorous coupled-wave analysis for TE and TM polarizations. Compared with the researched surface-relief polarization-independent single-port grating, efficiencies are improved with 98.1% for TE polarization and 98.2% for TM polarization. Hence, the novel gratings with some superiorities are suitable for promising photonic devices.

We numerically investigated the use of graphene nanoribbons placed on top of silicon-on-insulator (SOI) strip waveguides for light polarization control in silicon photonic-integrated waveguides. We found that two factors mainly affected the polarization control: the graphene chemical potential and the geometrical parameters of the waveguide, such as the waveguide and nanoribbon widths and distance. We show that the graphene chemical potential influences both TE and TM polarizations almost in the same way, while the waveguide width tapering enables both TE-pass and TM-pass polarizing functionalities. Overall, by increasing the oxide spacer thickness between the silicon waveguide and the top graphene layer, the device insertion losses can be reduced, while preserving a high polarization extinction ratio.

The polarization beam splitter is an essential photonic integrated circuit in applications where a high-performing on-chip polarization diversity scheme is required. The lower refractive index contrast of the silicon nitride material platform compared to silicon-on-insulator constitutes the separation of polarized light states a challenging task since for this purpose a large difference between the effective refractive indices of the fundamental TE and TM modes is highly desirable. In this paper, we present the design and optimization analysis of an ultra-broadband polarization beam splitter based on a thick silicon nitride platform through extensive 3D-FDTD simulations. The proposed device exploits two different Si3N4 thicknesses that enable the discrimination of the two polarizations at the proximity of an 800 nm thick slot and a 470 nm thick strip waveguide via directional coupling. The proposed two-stage PBS achieves higher than 30.6 dB polarization extinction ratio (PER) for both TE and TM polarizations across a 130 nm span at the SCL-band. The dimensions of the PBS are 94 × 14 μm2 and the insertion losses are calculated to be lower than 0.8 dB for both polarizations. The fabrication tolerance of the device is also discussed.

This paper reviews and presents a coherent approach to the design of compact vertical coupler (VC) in InP-based compound semiconductor with variable polarization dependence. As a polarization-independent (PI) coupler, the VC is shown to transfer light with more than 90% efficiency for both transverse-electric (TE) and transverse-magnetic (TM) polarizations. As a polarization-mode splitter (PMS), the VC is shown to preferentially couple TE or TM modes with a contrast ratio of up to 20 dB. We further demonstrate the single-mesa VC, which simplifies the fabrication process and potentially could improve the process yield, and its integration with a multimode interferometer (MMI). The versatility makes the VC a compact and useful input-stage device that not only maximizes input/output coupling efficiency to small active devices but also provides a degree of polarization control before the actual device.

An ultra-compact optical quantum router (QR) consisting of a Mach–Zehnder interferometer (MZI) and waveguide tapers is proposed and numerically simulated, using silicon-on-insulator (SOI). The interferometer is designed to work at the center wavelength of 1550 nm with visibilities of 99.65% and 98.80% for TE and TM polarizations, respectively. Using the principle of phase compensation and self-image, the length of the waveguide tapers is shortened by an order of magnitude with the transmission above 95% for both TE and TM polarizations. Furthermore, polarization beam splitters (PBS) with an ultra-compact footprint of 1.4 × 10.4 μm2 with transmissions of 98% for bi-polarizations are achieved by introducing anisotropic metamaterials. The simulated results indicate that the interferometer facilitates low loss, a broad operating spectral range, and a large tolerance to size variation in fabrications. The optical switch possesses the routing function while maintaining the polarization states, which promises to pave the point-to-point BB84 protocol into applications of network-based quantum communication.

We present the first unique design of a polarization-independent dual-wavelength splitter for wavelengths around 1.3 μm and 1.55 μm that is potentially of great interest to passive optical network (PON) applications. The filter design is simple compared with the other architectures and is based on ridge-type lateral directional couplers that can be readily integrated with other planar waveguide devices. Two design examples, based on InP/InGaAsP and Si/SiGe waveguides, are given. This polarization-independent wavelength splitting is achieved by exploiting the polarization dependence of the waveguides to produce coupling lengths that are sensitive to polarization and wavelength. We show that, to split the wavelengths without splitting the polarizations, the coupling lengths must be sufficiently different for TE and TM and for the different wavelengths in order to give the correct required ratios between the TE and TM coupling lengths for the two wavelengths of interest. We also show that the same approach can be applied to the design of a polarization splitter. The crosstalk, optical bandwidth, and fabrication sensitivity for the wavelength filter are evaluated.

Polarization dependence in integrated silicon photonics has a detrimental effect on the manipulation of quantum state with different polarizations in the quantum technology. Those limits have profound implications for further technological developments, especially in quantum photonic internet. Here, we propose a polarization-independent Mach–Zehnder interferometer (MZI) structure based on a 340 nm-thick silicon-on-insulator (SOI) platform. The MZI facilitates low loss, broad operating bandwidth, and large tolerance of the fabrication imperfection. We achieve an excess loss of <10% and an extinction radio of >18 in the 100 nm bandwidth (1500∼1600 nm) for both transverse electric (TE) and transverse magnetic (TM) modes. We numerically demonstrate an interference visibility of 99% and a polarization-independent loss (PDL) of 0.03 for both polarizations at 1550 nm. Furthermore, by using the principle of phase compensation and self-image, we shorten the length of the waveguide taper by almost an order of magnitude with the transmission of >95% for both TE and TM polarizations. Up to now, the proposed structure could significantly improve the integration and promote the development of monolithic integrated quantum internet.

A new structure of microstructure reflection three-port beam splitter grating is described in this paper. The grating includes two dielectric layers and a metal slab on the substrate, where incident waves are reflected into the zeroth-order and the ± first-order with polarization-independent property. With the optimized grating profile, reflection efficiencies’ ratios between the first-order and the zeroth-order can reach 0.998 and 1.001 for TE and TM polarizations, respectively. Especially, the reflection grating can diffract efficiencies more than 30% into the ± first-order and the zeroth-order with the incident angular bandwidth of −1.9–1.9[Formula: see text] for TM polarization, which can have merits compared with single-layer transmission grating.

Optical on-chip wireless interconnection is an emerging technology that aims to overcome the communication bottleneck in computing architectures and in which multiple processing units are exploited for data-intensive applications. In this work, we propose an integrated dielectric Vivaldi antenna, which exhibits the same gain performances for both TE and TM input polarizations. Point-to-point on-chip communication links between two Vivaldi antennas are analyzed. Moreover, the effect of wave polarization on the link performances is numerically studied in on-chip multilayer structures in connection with the multilayer characteristic parameters, i.e., cladding layer thickness and refractive index. The numerical results show that, with the same antenna gain, TM polarization is affected by lower propagation losses when suitable cladding layer thickness and refractive index are considered.

We propose a new compact polarization beam splitter based on the self-collimation effect of two-dimensional photonic crystals and photonic bandgap characteristics. The device is composed of a rectangular air holes-based polarization beam splitting structure and circular air holes-based self-collimating structure. By inserting the polarization beam splitting structure into the self-collimating structure, the TE and TM polarized lights are orthogonally separated at their junction. When the number of rows in the hypotenuse of the inserted rectangular holes is 5, the transmittance of TE polarized light at 1550 nm is 95.4% and the corresponding polarization extinction ratio is 23 dB; on the other hand, the transmittance of TM polarized light is 88.5% and the corresponding polarization extinction ratio is 37 dB. For TE and TM polarized lights covering a 100 nm bandwidth, the TE and TM polarization extinction ratios are higher than 18 dB and 30 dB, respectively. Compared with the previous polarization beam splitters, our structure is simple, the size is small, and the extinction ratio is high, which meets the needs of modern optical communications, optical interconnection, and optical integrated systems.

CoordenaÃÃo de AperfeiÃoamento de NÃvel Superior
As torres de destilaÃÃo de petrÃleo sofrem corriqueiramente com problemas relacionados à corrosÃo devido ao elevado Ãndice de acidez presente no petrÃleo exigindo uma elevada resistÃncia à corrosÃo por parte dos equipamentos utilizados. Dentre os materiais empregados na fabricaÃÃo e revestimento dos equipamentos, destacam-se os aÃos inoxidÃveis austenÃticos da sÃrie 300. Os aÃos inoxidÃveis austenÃticos sÃo largamente utilizados em componentes que operam em faixas de temperaturas elevadas, tais como caldeiras, super aquecedores, reatores quÃmicos e etc. Os aÃos inoxidÃveis super austenÃticos, devido ao aumento no teor de cromo e molibdÃnio se comparado aos aÃos austenÃticos da sÃrie 300, apresentam uma excelente resistÃncia à corrosÃo localizada, principalmente à corrosÃo por pites que à uma das mais danosas formas de corrosÃo aos equipamentos fabricados por esses aÃos. Os aÃos inoxidÃveis super austenÃticos tÃm sido apontados como possÃveis substitutos para a sÃrie austenÃtica 300 para aplicaÃÃes em equipamentos que requerem temperaturas elevadas e em meios agressivos como os encontrados na indÃstria do petrÃleo. Objetivando avaliar e comparar a resistÃncia à corrosÃo por pites do aÃo comercial inoxidÃvel super austenÃtico AL 6XN PLUSâ com os aÃos inoxidÃveis austenÃticos 304L, 316L e 317L para elevadas temperaturas, amostras desses aÃos foram submetidas a tratamentos tÃrmicos para as temperaturas de 500, 700 e 900 C por um perÃodo de 72 horas. Foram tambÃm analisadas as amostras na condiÃÃo como recebidas. Foram realizados ensaios de polarizaÃÃo cÃclica para avaliar e comparar a resistÃncia à corrosÃo por pites entre os materiais citados utilizando uma soluÃÃo aquosa de Ãcido sulfÃrico e cloreto de sÃdio nas concentraÃÃes 0,5 M H2SO4 + 0,5 M NaCl e 1 M H2SO4 + 2 M NaCl. Os resultados mostraram uma maior suscetibilidade à corrosÃo por pites no aÃo 304L. Os aÃos 316L e 317L apresentaram desempenho intermediÃrio (pites menores à medida que o material tornava-se mais nobre) e tambÃm corrosÃo em frestas. O aÃo super austenÃtico AL 6XN PLUSâ mostrou o melhor desempenho em ambos os eletrÃlitos utilizados. Somente uma amostra do aÃo super austenÃtico e em uma condiÃÃo extrema de temperatura e meio corrosivo mostrou suscetibilidade à corrosÃo por pites. Esse comportamento à bem desejÃvel na indÃstria do petrÃleo.
The oil distillation towers routinely suffer problems related to corrosion due to the high level of acidity present in the oil requiring a high resistance to corrosion of the equipment in use. Among the materials used in the manufacturing and coating of equipment, we highlight the Austenitic Stainless Steel of the 300 Series. Austenitic stainless steels are widely used in components for high temperatures, such as boilers, super heaters, chemical reactors, etc. Super austenitic stainless steels, due to their high Cr and Mo content, as compared to regular austenitic types, show a higher resistance to pitting corrosion, which is one of the most harmful forms of localized corrosion. These steels have been pointed as a possible replacement for common austenitic steels for applications at high temperatures and aggressive media, as in the oil industry. In order to evaluate and compare the resistance to pitting corrosion of AL 6XN PLUS â super austenitic stainless steel commercial with the 304L, 316L and 317L austenitic stainless steels for high temperatures, samples of these steels were subjected to heat treatments at temperatures of 500, 700 and 900 Â C for a period of 72 hours. Samples in the as-received condition were also analyzed. Cyclic polarization tests were performed to evaluate and compare the resistance to pitting corrosion of the materials mentioned using an aqueous solution of sulfuric acid and sodium chloride concentrations in 0.5 M H2SO4 + 0.5 M NaCl and 1 M H2SO4 + 2 M NaCl. The results showed a higher susceptibility to pitting corrosion in the 304L steel. 316L and 317L steels showed intermediate performance (smaller pits as the material became more noble) and crevice corrosion as well. The AL 6XN PLUS â super austenitic steel showed the best performance in both electrolytes used. Only a sample of the super austenitic steel and in an extreme condition of temperature and corrosive environment showed susceptibility to pitting corrosion. This behavior is very desirable in the oil industry.

FundaÃÃo de Amparo à Pesquisa do Estado do CearÃ
Nesta dissertaÃÃo foi estudada a aplicaÃÃo do filtro AcÃstico-Ãptico SintonizÃvel (AOTF), com a ModulaÃÃo de Pulsos por PosiÃÃo (PPM), objetivando implementar, utilizando o mÃtodo de Runge-Kutta de 4a ordem, portas lÃgicas (OR-OU e AND-E) Ãpticas operando com pulsos de luz ultracurtos (2ps). Neste trabalho à investigado o desempenho das portas considerando vÃrios comprimentos do filtro ( L) que integra a sua estrutura interna, com o intuito de obter o comprimento de filtro mais adequado para uma operaÃÃo satisfatÃria, em regime dispersivo, nÃo linear, sem perdas e com modulaÃÃo de fase cruzada (XPM). Esta investigaÃÃo à realizada em duas situaÃÃes: primeiramente, sÃo considerados filtros com automodulaÃÃo de fase (SPM) e GVD (dispersÃo da velocidade de grupo). Em um segundo momento, as mesmas portas sÃo obtidas com efeitos SPM, XPM e GVD agindo juntos no AOTF. Foi observado que para pulsos do tipo sÃliton, os efeitos da dispersÃo, da nÃo linearidade e da modulaÃÃo de fase cruzada exercem juntos uma forte influÃncia na propagaÃÃo do mesmo, provocando a quebra do pulso na saÃda do dispositivo quando utilizamos um comprimento maior para os filtros. Para dispositivos mais curtos, o pulso chaveado apresentou compressÃes e alargamentos temporais e espectrais, bem comodeslocamentos temporais nos dois modo de propagaÃÃo (TE e TM). ApÃs a escolha de um comprimento de filtro adequado, foi selecionado um deslocamento temporal Ãtimo a ser aplicado nos pulsos de entrada para conseguirmos, na saÃda da porta lÃgica, deslocamentos temporais satisfatÃrios (acertos) na aplicaÃÃo da modulaÃÃo PPM. Em seguida, introduzimos fases em um dos pulsos de entrada (TM), provocando um defasamento entre os pulsos TE e TM, reduzindo ainda mais a margem de erro PPM de operaÃÃo das portas. Finalmente, ao analisarmos as fases aplicadas no pulso TM (0 a 2), definirmos o melhor Ãngulo de fase para que as portas operem na regiÃo de acerto da modulaÃÃo PPM.
In this dissertation it was studied the application of the Acoustic Optical Tunable Filter (AOTF), with Pulse Position Modulation (PPM), aiming at to implement, using the method of Runge-Kutta of 4a order, logical gates (OR and AND) optical operating with pulses of light ultra shorts (2ps). In this work the acting of the gates is investigated, considering several lengths of the filter (  L) that integrates your internal structure, with the intention of obtaining the length of more appropriate filter for a satisfactory operation, in dispersion regime, nonlinear, without losses and with Cross Phase Modulation (XPM). This investigation is accomplished in two situations: firstly, filters are considered with Self Phase Modulation (SPM) and GVD (group-velocity dispersion). In a second moment, the same gates are obtained with effects SPM, XPM and GVD, acting together in AOTF. It was observed that for pulses of the type soliton, the effects of the dispersion, of the nonlinearity and of the cross phase modulation exercise together a strong influences in the propagation of the same, provoking the break of the pulse in the exit of the device when we used a larger length for the filters. For shorter devices, the switched pulse presented temporary and spectral compression and spread, as well as, displacement in the time in the two propagation modes (TE and TM). After the choice of a length of appropriate filter, a great temporary displacement was selected to be applied in the input pulses for us to get, in the exit of the logical gate, satisfactory temporary displacements (successes) in the application of the PPM modulation. Soon after, we introduced phases in one of the entrance pulses (TM), provoking a phase displacement among TE and TM pulses, still reducing more the margin of error PPM of operation of the gates. Finally, to the we analyze the applied phases in the pulse TM (0 to 2), we defined the best phase angle for the gates to operate in the success area of the PPM modulation.

Perfect blazing to the m=-l spectral order was once assumed to be possible for only Bragg angle incidence, i.e. for an angled = sin- 1 (^) from the normal to the grating surface, where d/A is the grating period in wavelengths. The diffracted beam is then back in the direction of incidence, an inconvenience in most applications such as multiplexers, de-multiplexers and frequency scanned antennas. Off Bragg blazing is preferable and now can be done with high efficiency. Here off Bragg blazing for T M polarized incidence on rectangular groove gratings is investigated numerically and design curves are presented. It is a consequence of reciprocity that off Bragg blaze angles must occur in pairs #1 and 62 and these are related by a generalization of the Bragg equation sin 9\ + sin 92 — 2 • F°r groove width to period ratios a/d=0.5 perfect off Bragg blazing occurs most frequently for periods 0.9