Littérature scientifique sur le sujet « Tin-oxygen »
Créez une référence correcte selon les styles APA, MLA, Chicago, Harvard et plusieurs autres
Sommaire
Consultez les listes thématiques d’articles de revues, de livres, de thèses, de rapports de conférences et d’autres sources académiques sur le sujet « Tin-oxygen ».
À côté de chaque source dans la liste de références il y a un bouton « Ajouter à la bibliographie ». Cliquez sur ce bouton, et nous générerons automatiquement la référence bibliographique pour la source choisie selon votre style de citation préféré : APA, MLA, Harvard, Vancouver, Chicago, etc.
Vous pouvez aussi télécharger le texte intégral de la publication scolaire au format pdf et consulter son résumé en ligne lorsque ces informations sont inclues dans les métadonnées.
Articles de revues sur le sujet "Tin-oxygen"
Okamoto, H. « O-Sn (Oxygen-Tin) ». Journal of Phase Equilibria & ; Diffusion 27, no 2 (1 avril 2006) : 202. http://dx.doi.org/10.1361/154770306x97740.
Texte intégralOkamoto, H. « O−Sn (Oxygen-Tin) ». Journal of Phase Equilibria and Diffusion 27, no 2 (mars 2006) : 202. http://dx.doi.org/10.1007/s11669-006-0063-6.
Texte intégralWang, Sheng, et Teruo Hori. « Oxygen evolution sensitized by tin porphyrin in microheterogeneous system and membrane systems ». Journal of Porphyrins and Phthalocyanines 07, no 01 (janvier 2003) : 37–41. http://dx.doi.org/10.1142/s1088424603000069.
Texte intégralRaghavan, V. « Fe-O-Sn (Iron-Oxygen-Tin) ». Journal of Phase Equilibria and Diffusion 31, no 4 (21 avril 2010) : 372. http://dx.doi.org/10.1007/s11669-010-9715-7.
Texte intégralIvanov A. F., Egorov F. S., Platonov N. D., Matukhin V. L. et Terukov E. I. « Influence of the oxygen during the deposition of an indium tin oxide thin film by magnetron sputtering for heterojunction solar cells ». Semiconductors 56, no 3 (2022) : 225. http://dx.doi.org/10.21883/sc.2022.03.53063.9747.
Texte intégralWu, Xiao Wen, Jian Xin Zhang, Yang Wang et Amin Huang. « Structure and Properties of Ti/TiN/Sb-SnO2 Electrodes with Plasma Sprayed TiN Interlayer ». Advanced Materials Research 602-604 (décembre 2012) : 1613–16. http://dx.doi.org/10.4028/www.scientific.net/amr.602-604.1613.
Texte intégralLaimböck, Paul. « In-Line Oxygen Sensors for the Glass Melt and the Float Bath ». Advanced Materials Research 39-40 (avril 2008) : 443–46. http://dx.doi.org/10.4028/www.scientific.net/amr.39-40.443.
Texte intégralReuter, Hans, et Hilko Wilberts. « On the structural diversity anions coordinate to the butterfly-shaped [(R2Sn)3O(OH)2]2+ cations and vice versa ». Canadian Journal of Chemistry 92, no 6 (juin 2014) : 496–507. http://dx.doi.org/10.1139/cjc-2013-0517.
Texte intégralMoatti, A., R. Bayati, S. Singamaneni et J. Narayan. « Epitaxial integration of TiO2 with Si(100) through a novel approach of oxidation of TiN/Si(100) epitaxial heterostructure ». MRS Advances 1, no 37 (2016) : 2629–34. http://dx.doi.org/10.1557/adv.2016.463.
Texte intégralBeensh-Marchwicka, Grazyna, et Lubomila Krol-Stepniewska. « Reproducibility of Properties of SnOxThin Films Prepared by Reactive Sputtering ». ElectroComponent Science and Technology 11, no 4 (1985) : 271–80. http://dx.doi.org/10.1155/apec.11.271.
Texte intégralThèses sur le sujet "Tin-oxygen"
Agbede, Oluseye Omotoso. « Study of oxygen dissolution in molten tin : a novel SOFC anode ». Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/24757.
Texte intégralRajan, Ziba Shabir Hussein Somjee. « Iridium oxide supported on antimony-doped tin oxide as an electrocatalyst for the oxygen evolution reaction ». Master's thesis, University of Cape Town, 2020. http://hdl.handle.net/11427/32528.
Texte intégralStevenson, Paul. « Nuclear structure calculations using many-body perturbation theory with a separable interaction ». Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312333.
Texte intégralAnand, Manoj. « Study of tin oxide for hydrogen gas sensor applications ». [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001003.
Texte intégralCognard, Gwenn. « Electrocatalyseurs à base d’oxydes métalliques poreux pour pile à combustible à membrane échangeuse de protons ». Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAI007.
Texte intégralConventional electrocatalysts used in proton exchange membrane fuel cells (PEMFC) are composed of platinum nanoparticles supported on high specific surface area carbon blacks. At the cathode side of the PEMFC, where the oxygen reduction reaction (ORR) occurs, the electrochemical potential can reach high values - especially during startup-shutdown operating conditions - resulting in irreversible degradation of the carbon support. A “material” solution consists of replacing the carbon with supports based on metal oxides. The latter have to be resistant to electrochemical corrosion, be electronic conductor and have a porous and nano-architectural structure (for the transport of reagents and products and the homogeneous distribution of the ionomer and platinum nanoparticles).In this work, we have developed and characterized electrocatalysts composed of platinum (Pt) nanoparticles based on tin dioxide (SnO2) and titanium dioxide (TiO2) with optimized textural (aerogel, nanofibres or loosetubes morphologies) and electron-conduction properties (doped with niobium Nb or antimony Sb). The best electrocatalytic properties are reached for an antimony-doped SnO2 aerogel support, denoted ATO. The Pt/ATO electrocatalyst has especially a higher specific activity for the ORR than a Pt/carbon Vulcan® electrocatalyst, synthesized in the same conditions, suggesting beneficial interactions between the Pt nanoparticles and the metal oxide support (Strong Metal Support Interactions SMSI).Durability tests simulating automotive operating conditions of a PEMFC were carried out in liquid electrolyte at 57 °C on these two electrocatalysts by cycling between 0.60 and 1.00 V vs the reversible hydrogen electrode (RHE) or between 1.00 and 1.50 V vs RHE. The Pt/ATO electrocatalyst has an increased stability compared to the reference Pt/carbon Vulcan® electrocatalyst. However, new degradation mechanisms were highlighted in this study: first, the doping element (Sb) is progressively dissolved during electrochemical ageing, which implies a loss of electronic conductivity. This loss is partly due to incursions at low potential, including during electrochemical characterizations. Moreover, between 5,000 and 10,000 cycles of the accelerated stress tests (between 0.60 and 1.00 V vs RHE or between 1.00 and 1.50 V vs RHE at 57 °C), the support loses its porous structure and forms a poorly conductive amorphous film
Sundqvist, Jonas. « Employing Metal Iodides and Oxygen in ALD and CVD of Functional Metal Oxides ». Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-3450.
Texte intégralSaveleva, Viktoriia. « Investigation of the anodes of PEM water electrolyzers by operando synchrotron-based photoemission spectroscopy ». Thesis, Strasbourg, 2018. http://www.theses.fr/2018STRAF002/document.
Texte intégralDevelopment of oxygen evolution reaction (OER) catalysts for proton exchange membrane water electrolysis technology depends on the understanding of the OER mechanism. This thesis is devoted to the application of near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS) and near edge X-ray absorption fine structure (NEXAFS) techniques for operando investigation of the Ir, Ru - based anodes. For Ru-based systems, we observe the potential-induced irreversible transition of Ru (IV) from an anhydrous to a hydrated form, while the former is stabilized in the presence of Ir. Regarding single Ir-based anodes, the analysis of O K edge spectra reveals formation of electrophilic oxygen OI- as an OER intermediate. Higher stability of Ir catalysts supported on antimony-doped tin oxide (ATO) is related to their lower oxidation. This work demonstrates different OER mechanisms on Ir, Ru-based anodes involving anion and cation red-ox chemistry, correspondingly, regardless the oxide nature
YIN, CHIEN-REN JOE. « OXIDATIVE DEHYDROGENATION OF BUTENES OVER TIN-PHOSPHORUS-OXYGEN AND LITHIUM-TIN-PHOSPHORUS - OXYGEN CATALYSTS ». Thesis, 1987. http://hdl.handle.net/1911/16117.
Texte intégralHuang, Chyi-Chyuan, et 黃麒銓. « Effects of Predeposited Ti or TiN and Oxygen Content on the Structure and Properties of TiN in the Metallization of ULSI ». Thesis, 1998. http://ndltd.ncl.edu.tw/handle/68940632903697294219.
Texte intégral國立交通大學
材料科學與工程研究所
86
This study investigated the effect of predeposited Ti or TiN on TiN structure and properties. The relationship was investigated betweeen oxygen content and TiN properties and structure by changing oxygen flow. The TiN film has the 〈111〉 highly preferred orientation when the sputtering conditions are set at uncollimated sputtering, low sputtering power, and low substrate temperature. And it has a lower film resistivity when the sputtering conditions are set at collimated sputtering, high sputtering power, and high substrate temperature. TiN film will grow along 〈111〉 when one Ti underlayer with 〈0002〉preferred orientation was predeposited. Finally, one novel "2-step TiN deposition process" was successfully developed to grow the TiN film with a high deposition rate, low resistivity (58.23u Ω-cm), 〈111〉 highly preferred orientation, and high bottom step coverage by predepositing one underlayer (about 100A∼200A) as a seed layer. It is one novel and excellent process which can be applied to sub-quatrer micron metallization. The TiN film would tend to be amorphous, and the increase resistivity and leakage current increased with oxygen content.
Tsai, Cho-Jen, et 程書彥. « Measurement of Ti ability to absorbing oxygen and TiN stress relaxation by substrate curvature ». Thesis, 2006. http://ndltd.ncl.edu.tw/handle/49517097537619254011.
Texte intégral國立清華大學
材料科學工程學系
94
Abstract Ti/SiO2/Si, TiN/Si and TiN/Ti/SiO2/Si structures were annealed in vacuum to observe the ability of Ti absorbing oxygen and the stress relaxation of TiN layer. The stress of the film was determined in situ by measuring the curvature of the sample during the annealing process. The phases and the microstructure of the film after annealing process were identified using XRD, AES, and TEM. A clear correlation was between the evolution of stress and the absorption of oxygen atoms by the Ti film. From the XRD data, we can find that the (002) peak of Ti shifts to low angle at 280oC~400oC in the Ti/SiO2/Si system. It is due to the oxygen-induced Ti lattice expansion. The content of oxygen increases as the annealing temperatures and time increase, and this process let the stress become more compressive. The experiment finds that the content of oxygen can be monitored by in-situ curvature measurement. Moreover, diffusivity and the activation energy of oxygen in Ti film can be extracted. The stress relaxation of TiN is due to grain growth proved by Dark Field TEM and XRD intensity. The starting temperatures for the stress relaxation are different between TiN/Si and TiN/Ti/SiO2 system because of different TiN textures in these two systems.
Chapitres de livres sur le sujet "Tin-oxygen"
Laimböuck, Paul R., et Ruud G. C. Beerkens. « On-Line Oxygen Sensor for the Tin Bath in Float Glass Production Lines ». Dans A Collection of Papers Presented at the 66th Conference on Glass Problems : Ceramic Engineering and Science Proceedings, Volume 27, Issue 1, 19–46. Hoboken, NJ, USA : John Wiley & Sons, Inc., 2008. http://dx.doi.org/10.1002/9780470291306.ch2.
Texte intégralEgashira, Makoto, Masayo Nakashima et Shohachi Kawasumi. « Oxygen Desorption and Conductivity Change of Palladium-Doped Tin(IV) Oxide Gas Sensor ». Dans ACS Symposium Series, 71–82. Washington, DC : American Chemical Society, 1986. http://dx.doi.org/10.1021/bk-1986-0309.ch004.
Texte intégralSamant, Anand V., Michael J. Gedeon, Robert E. Kusner, Chad A. Finkbeiner, Fritz C. Grensing et W. Raymond Cribb. « Properties of ToughMet®3 Copper-Nickel-Tin Alloy for Oxygen Enriched Atmosphere Applications ». Dans Flammability and Sensitivity of Materials in Oxygen-Enriched Atmospheres : 14th Volume, 296–307. 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959 : ASTM International, 2016. http://dx.doi.org/10.1520/stp159620150069.
Texte intégralGuliyeva, A. N., et K. A. Gazvini. « Fuzzy Clustering of Influence of Oxygen on Oxidation of Isobutylene in Pulse Mode on Tin-Antimony Catalyst ». Dans Advances in Intelligent Systems and Computing, 512–19. Cham : Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68004-6_67.
Texte intégralKim, Hyoun Woo, et Ju Hyun Myung. « Study of In2O3 Thin Films Prepared on TiN Substrates Using a Triethylindium and Oxygen Mixture ». Dans Key Engineering Materials, 760–62. Stafa : Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-410-3.760.
Texte intégralHuang, Hong-Hsin, Yen-Ming Chen et Ming-Chih Huang. « Growth Characteristics and Properties of Tin-Doped Indium Oxide Thin Films as a Function of Oxygen Pressure When Prepared by E-beam Evaporation ». Dans Lecture Notes in Electrical Engineering, 783–89. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-04573-3_97.
Texte intégralHuston, David L., Crystal Laflamme, Georges Beaudoin et Stephen Piercey. « Light Stable Isotopes in Volcanic-Hosted Massive Sulfide Ore Systems ». Dans Isotopes in Economic Geology, Metallogenesis and Exploration, 245–82. Cham : Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-27897-6_9.
Texte intégralWeller, Mark, Jonathan Rourke, Tina Overton et Fraser Armstrong. « The Group 13 elements ». Dans Inorganic Chemistry. Oxford University Press, 2018. http://dx.doi.org/10.1093/hesc/9780198768128.003.0016.
Texte intégralBeng, Teo Soon, Teoh Siang Guan, et Yeap Guan Yeow. « Organotin and inorganic tin complexes of some aromatic Schiff bases ». Dans Chemistry and Technology of Silicon and Tin, 509–13. Oxford University PressOxford, 1992. http://dx.doi.org/10.1093/oso/9780198555803.003.0045.
Texte intégralReuter, Hans, M. Kremser et D. Schroder. « OBSERVATIONS TO THE STRUCTURAL EVOLUTION OF TIN(IV)-OXYGEN-GELS ». Dans Eurogel '91, 309–16. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-444-89344-4.50037-9.
Texte intégralActes de conférences sur le sujet "Tin-oxygen"
Hosoi, Takuji, Yuki Odake, Keisuke Chikaraishi, Hiroaki Arimura, Naomu Kitano, Takayoshi Shimura et Heiji Watanabe. « Oxygen-induced high-k degradation in TiN/HfSiO gate stacks ». Dans 2012 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2012. http://dx.doi.org/10.1109/snw.2012.6243358.
Texte intégralSnyder, Paul G., Bhola N. De, John A. WoolIam, T. J. Coutts et X. Li. « Study Of Indium Tin Oxide Films Exposed To Atomic Oxygen ». Dans SPIE 1989 Technical Symposium on Aerospace Sensing, sous la direction de Robert R. Hale. SPIE, 1989. http://dx.doi.org/10.1117/12.960955.
Texte intégralLu, Ganhua, Liying Zhu, Stephen Hebert, Edward Jen, Leonidas Ocola et Junhong Chen. « Engineering Gas Sensors With Aerosol Nanocrystals ». Dans 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2007. http://dx.doi.org/10.1115/mnc2007-21301.
Texte intégralLETTIERI, STEFANO, ANTONIO SETARO, MAURO CAUSÀ, FABIO TRANI, DOMENICO NINNO et PASQUALE MADDALENA. « ROLE OF SURFACE BRIDGING OXYGEN VACANCIES IN PHOTOLUMINESCENCE OF TIN DIOXIDE NANOBELTS ». Dans Proceedings of the 13th Italian Conference. WORLD SCIENTIFIC, 2008. http://dx.doi.org/10.1142/9789812835987_0032.
Texte intégralLin, Chen, Dacheng Zhang et Xiaodi Liu. « A study of tin oxide thin film gas sensors with high oxygen vacancies ». Dans 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). IEEE, 2012. http://dx.doi.org/10.1109/nems.2012.6196870.
Texte intégralLian, Kun, Zhong G. Ling et Jiechao Jiang. « Miniaturized tin oxide (SnOx) sensor by using oxygen-plasma-treated thin film technique ». Dans International Conference on Sensors and Control Techniques (ICSC2000), sous la direction de Desheng Jiang et Anbo Wang. SPIE, 2000. http://dx.doi.org/10.1117/12.385525.
Texte intégralZhong, C. W., H. C. Lin, J. R. Tsai, K. C. Liu et T. Y. Huang. « Impact of Gate Dielectrics and Oxygen Annealing on Tin-Oxide Thin-Film Transistors ». Dans 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.ps-6-22.
Texte intégralRoy, Manosi, et Dhananjay Kumar. « Blue Shift in Ultraviolet Absorption Spectra of Oxygen Doped Titanium Nitride Thin Films ». Dans ASME 2020 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/imece2020-24113.
Texte intégralLamsal, Buddhi Sagar, Yung Huh, Mukul Dubey, K. C. Manoj, Swaminathan Venkatesan, Qiquan Qiao, David Galipeau et Qi Hua Fan. « Oxygen induced limitation on grain growth in RF sputtered Indium tin oxide thin films ». Dans 2013 IEEE International Conference on Electro/ Information Technology (EIT). IEEE, 2013. http://dx.doi.org/10.1109/eit.2013.6632655.
Texte intégralGuler, Mehmet Oguz, Mirac Alaf, Deniz Gultekin, Hatem Akbulut et Ahmet Alp. « The Effect of Pressure on the Microstructural Behavior on SnO2 Thin Films Deposited by RF Sputtering ». Dans ASME 2008 2nd Multifunctional Nanocomposites and Nanomaterials International Conference. ASMEDC, 2008. http://dx.doi.org/10.1115/mn2008-47071.
Texte intégralRapports d'organisations sur le sujet "Tin-oxygen"
Gray. L51567 Influence of Filler Wire Carbon and Residual Element Content on the Mechanical Properties. Chantilly, Virginia : Pipeline Research Council International, Inc. (PRCI), juin 1998. http://dx.doi.org/10.55274/r0010565.
Texte intégral