Bibliographies thématiques / Three-phase SiC Inverter

Littérature scientifique sur le sujet « Three-phase SiC Inverter »

Auteur : Grafiati
Publié le 14 mars 2023

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Articles de revues sur le sujet "Three-phase SiC Inverter"

1

Kranzer, Dirk, Florian Reiners, Christian Wilhelm et Bruno Burger. « System Improvements of Photovoltaic Inverters with SiC-Transistors ». Materials Science Forum 645-648 (avril 2010) : 1171–76. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1171.

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In this paper the system improvements of PV-inverters with SiC-transistors are demonstrated. The basic characteristics of engineering prototypes of normally-off SiC-JFETs and SiC-MOSFETs were measured and their differences in the application are considered. To demonstrate the improvement in PV-inverter performance, a 5 kW single-phase and a three-phase full bridge inverter with normally-off SiC-JFETs were developed at Fraunhofer ISE. Different switching frequencies up to 144 kHz were applied and the impact on production costs and inverter performance was rated under the aspects of an industrial product development. This means, the influences on the efficiency and power density. In this work, a world record in PV-inverter efficiency of 99 % was achieved in a single-phase inverter and for the three-pase inverter, the power density was tripled with respect to commercially available state of the art PV-inverters.
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Kim, Jaechang, Sangshin Kwak et Seungdeog Choi. « Impacts of SiC-MOSFET Gate Oxide Degradation on Three-Phase Voltage and Current Source Inverters ». Machines 10, no 12 (9 décembre 2022) : 1194. http://dx.doi.org/10.3390/machines10121194.

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In this paper, the performance variations of SiC MOSFET-based voltage and current source inverters under gate oxide degradation are studied. It is confirmed that the turn-on and turn-off delays of SiC MOSFETs change significantly by high electric field stress, which accelerates the gate oxide degradation. Variations in the turn-on and turn-off delays of switching devices extend or reduce the duty error of voltage source inverters and current source inverters. The performance variations of the voltage and current source inverter due to the duty error changes caused by the gate oxide degradation are analyzed through simulations. As a result, the gate oxide degradation worsens the performance of the voltage source inverter. Furthermore, the negative gate oxide degradation, which lowers the threshold voltage, decreases the performance of the current source inverter.
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Costa, Pedro, Sónia Pinto et José Fernando Silva. « A Novel Analytical Formulation of SiC-MOSFET Losses to Size High-Efficiency Three-Phase Inverters ». Energies 16, no 2 (11 janvier 2023) : 818. http://dx.doi.org/10.3390/en16020818.

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This paper presents a novel analytical loss formulation to predict the efficiency of three-phase inverters using silicon carbide (SiC) metal—oxide—semiconductor field-effect transistors (MOSFETs). The proposed analytical formulation accounts for the influence of the output current harmonic distortion on the conduction losses as well as the impact of the output parasitic capacitances and the deadtime on the switching losses. The losses are formulated in balanced conditions to select suitable SiC MOFETs for the desired target efficiency. To validate the proposed methodology, a 3-phase inverter is designed to present full load efficiency in excess of 99% when built using SiC MOSFETs antiparalleled with SiC Schottky diodes selected for the specified full load efficiency. Experimental assessment of the designed inverter efficiency is compared with the expected values from the proposed analytical formulation and shown to match or exceed the predicted results for loads ranging from 40% to 100% of full load.
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Yang et Choi. « Power Efficiency Improvement of Three-Phase Split-Output Inverter Using Magnetically Coupled Inductor Switching ». Electronics 8, no 9 (30 août 2019) : 969. http://dx.doi.org/10.3390/electronics8090969.

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The conventional three-phase split-output inverter (SOI) has been used for grid-connected applications because it does not require dead time and has no shoot-through problems. Recently, the conventional inverter uses the silicon carbide (SiC) schottky diodes for the freewheeling diodes because of its no reverse-recovery problem. Nevertheless, in a practical design, the SiC schottky diodes suffer from current overshoots and voltage oscillations. These overshoots and oscillations result in switching-power losses, decreasing the power efficiency of the inverter. To alleviate this drawback, we present a three-phase SOI using magnetically coupled inductor switching technique. The magnetically coupled inductor switching technique uses one auxiliary diode and coupled inductor for each switching leg in the three-phase SOI. By the operation of the coupled inductor, the main diode current is shifted to the auxiliary diode without the reverse-recovery process. The proposed inverter reduces switching-power losses by alleviating current overshoots and voltage oscillations of SiC schottky diodes. It achieves higher power efficiency than the conventional inverter. We discuss experimental results for a 1.0 kW prototype inverter to verify the performance of the proposed inverter.
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Abdalgader, Ibrahim A. S., Sinan Kivrak et Tolga Özer. « Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications ». Micromachines 13, no 2 (17 février 2022) : 313. http://dx.doi.org/10.3390/mi13020313.

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The converters used to integrate the ground power station of planes with the utility grid are generally created with silicon-insulated gate bipolar transistor (Si-IGBT)-based semiconductor technologies. The Si-IGBT switch-based converters are inefficient, oversized, and have trouble achieving pure sine wave voltages requirements. The efficiency of the aircraft ground power units (AGPU) can be increased by replacing existing Si-IGBT transistors with silicon carbide (SiC) IGBTs because of the physical constraints of Si-IGBT switches. The primary purpose of this research was to prove that the efficiency increase could be obtained in the case of using SiC-IGBTs in conventional AGPU systems with the realized experimental studies. In this study, three different experimental systems were discussed for this purpose. The first system was the traditional APGU system. The other two systems were single-phase test (SPT) and three-phase inverter systems, respectively. The SPT system and three-phase inverter systems were designed and implemented to compare and make analyses of Si-IGBTs and SiC-IGBTs performance. The efficiency and detailed hard switching behavior comparison were performed between the 1200-V SiC-IGBT- and 1200-V Si-IGBT-based experimental systems. The APGU system and Si-IGBT modules were examined, the switching characteristic and efficiency of the system were obtained in the first experimental study. The second experimental study was carried out on the SPT system. The single-pulse test system was created using Si-IGBTs and SiC-IGBTs switches in the second experimental system. The third experiment included a three-phase-inverter-based test system. The system was created with Si-IGBTs and SiC-IGBTs to compare the two different switch-based inverters under RL loads. The turning off and turning on processes of the IGBT switches were examined and the results were presented. The Si-IGBT efficiency was 77% experimentally in the SPT experimental system. The efficiency of the third experimental system was increased up to 95% by replacing the old Si transistor with a SiC. The efficiency of the three-phase Si-IGBT-based system was 86% for the six-switch case. The efficiencies of the SiC-IGBT-based system were increased to around 92% in the three-phase inverter system experimentally. The findings of the experimental results demonstrated that the SiC-IGBT had a faster switching speed and a smaller loss than the classical Si-IGBT. As a result of the experimental studies, the efficiency increase that could be obtained in the case of using SiC-IGBTs in conventional AGPU systems was revealed.
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Colmenares, Juan, Diane-Perle Sadik, Patrik Hilber et Hans-Peter Nee. « Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter ». IEEE Journal of Emerging and Selected Topics in Power Electronics 4, no 3 (septembre 2016) : 996–1006. http://dx.doi.org/10.1109/jestpe.2016.2551980.

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Lee, Heng, Chun Kai Liu et Tao Chih Chang. « The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter ». Materials Science Forum 1004 (juillet 2020) : 1045–53. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1045.

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This paper focuses on how to define and integrate the system level and power module level with optimal conditions in SiC and Si-IGBT. To investigate the above situation, we compare the performance of SiC and Si-IGBT in power module and system level at different ambient temperatures. At the same maximum junction temperature 150°C and ambient temperature at 25°C and 80°C, it found that SiC type electrical resistance, maximum endurable current, and voltage could be better than the IGBT type power module above 20%. On the other hand, the simulation of three-phase inverter at different switching frequency such as 10kHz, 15kHz, 20kHz, 30kHz and it had been observed that the power loss of SiC inverter are 78% less for 10kHz switching frequency; 82% less for switching frequency at 15kHz; 85% less for 20kHz of switching frequency; 89% less for switching frequency at 30kHz in the Si-IGBT three-phase SPWM inverter at ambient temperature 80°C.
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Sasaki, Kensuke, Shinji Sato, Kohei Matsui, Yoshinori Murakami, Satoshi Tanimoto et Hidekazu Tanisawa. « 40 kW/L High Switching Frequency Three-Phase AC 400 V All-SiC Inverter ». Materials Science Forum 740-742 (janvier 2013) : 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1081.

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We, the R&D Partnership for Future Power Electronics Technology (FUPET), have reported a forced-air-cooled DC 600 V three-phase AC 400 V inverter built with SiC-JFETs and SiC-SBDs and designed to attain an output power density (OPD) of 40 kW/L with a switching frequency (fSW) of 50 kHz. This paper reports the test results of this inverter attaining an OPD of 40 kW/L in operating a 3-phase motor with fSW = 50 kHz, and an OPD of more than 60 kW/L in operating an equivalent circuit with fSW = 20 kHz by adopting specialized high speed drive circuit boards.
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di Benedetto, Marco, Luca Bigarelli, Alessandro Lidozzi et Luca Solero. « Efficiency Comparison of 2-Level SiC Inverter and Soft Switching-Snubber SiC Inverter for Electric Motor Drives ». Energies 14, no 6 (18 mars 2021) : 1690. http://dx.doi.org/10.3390/en14061690.

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This paper focuses on the investigation and implementation of a high-performance power conversion system to reduce the overvoltage phenomenon in variable speed electric drive applications. Particularly, the pros and cons of using Silicon Carbide power MOSFETs in the power converter when a long power cable is employed in electric motor drive systems has been addressed. The three-phase two level inverter with the addition of snubber circuits that consist of capacitors and diodes has been investigated, designed and tested in order to mitigate the overvoltage problems without sacrificing the conversion efficiency. Given that the snubber circuit added to the switches can increase losses, an additional circuit is used to recover the energy from the snubber circuit. The proposed analysis has been then validated through an experimental campaign performed on the converter prototype. The experimental results show that the proposed converter can reduce the overvoltage at the electric motor terminals with excellent conversion efficiency compared to the classical solution like the three-phase two level inverter.
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Cougo, Bernardo, Lenin Morais, Gilles Segond, Raphael Riva et Hoan Tran Duc. « Influence of PWM Methods on Semiconductor Losses and Thermal Cycling of 15-kVA Three-Phase SiC Inverter for Aircraft Applications ». Electronics 9, no 4 (7 avril 2020) : 620. http://dx.doi.org/10.3390/electronics9040620.

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This paper presents the influence of different pulse width modulation (PWM) methods on losses and thermal stresses in SiC power modules used in a three-phase inverter. The variation of PWM methods directly impacts instantaneous losses on these semiconductors, consequently resulting in junction temperature swing at the fundamental frequency of the converter’s output current. This thermal cycling can significantly reduce the lifetime of these components. In order to determine semiconductor losses, one needs to characterize SiC devices to calculate the instantaneous power. The characterization methodology of the devices, the calculation of instantaneous power and temperature of SiC dies, and the influence of the different PWM methods are presented. A 15-kVA inverter is built in order to obtain experimental results to confirm the characterization and loss calculation, and we show the best PWM methods to increase efficiency and reliability of the three-phase inverter for specific aircraft applications.
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Thèses sur le sujet "Three-phase SiC Inverter"

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Muhsen, Hani. « Three-Phase Voltage Source Inverter with Very High Efficiency Based on SiC Devices ». Doctoral thesis, Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-199329.

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This dissertation aims at designing a three-phase voltage source inverter based on the SiC devices and mainly the SiC-MOSFET. The designed inverter offers a possibility to drive the power inverter with a very high efficiency, which can reach up to 99% for 16 kW rated power. The design is dedicated to the electric vehicle application, and it aims at • Providing a comparative study on some of the current discrete SiC devices in terms of the total losses and the thermal conductivity. In addition, a behavioral study of the effective channel mobility with temperature variation in the SiC MOSFET will be investigated. • Designing a gate driver which fits with the driving requirements of the SiC-MOSFET and provides a trade-off between the switching losses and the EMI behavior. • Designing a three-phase voltage source inverter with 16 kW rated power; the design includes minimizing the inverter losses and extracts the EMI model of the power inverter by considering the effects of the parasitic parameters; moreover a short guideline for selecting the heat-sink based on the static network is introduced. • Proposing a new and simplified carried-based PWM, this will reduce the harmonics in the output waveforms and enhance the utilization of the DC-link voltage. • Proposing a new strategy for compensating the dead-time effect in carrier based-PWM and to find out the proper dead-time level in VSI based on SiC –MOSFET. • Designing faults diagnosis and protection circuits in order to protect the power inverter from the common faults; overcurrent, short-circuit, overvoltage, and overtemperature faults.
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Guo, Wilson. « CONDUCTED EMISSION STUDY ON SI AND SIC POWER DEVICES ». Miami University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=miami1557701342593551.

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Alves, rodrigues Luis Gabriel. « Design and characterization of a three-phase current source inverter using 1.7kV SiC power devices for photovoltaic applications ». Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAT030.

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Classiquement, la chaîne de conversion de l’énergie électrique des centrales photovoltaïques comporte un champ photovoltaïque (PV) délivrant une tension maximale de 1kV suivi d’un hacheur élévateur connecté à un onduleur de tension triphasé. Cette chaîne de conversion à deux étages (DC/DC + DC/AC) est ensuite raccordée sur le réseau moyenne tension au travers d’un transformateur BT/HTA. Dans l’objectif de simplifier les systèmes de conversion PV, ce travail de recherche s’intéresse à l’étude et la mise en œuvre d’une topologie DC/AC n’employant qu’un seul étage de conversion : l’Onduleur de Courant triphasé. Bien que relativement simple, l’Onduleur de Courant présente comme inconvénient majeur les pertes par conduction. Pour pallier ce problème, des interrupteurs à grand-gap au Carbure de Silicium (SiC) sont employés, ce qui permet de convertir de l’énergie de façon performante (η>98.5%) tout en gardant une fréquence de commutation élevée (plusieurs dizaines de kHz). Les modules à semi-conducteurs de puissance du marché n’étant pas compatibles avec ce type de convertisseur, des modules particuliers en SiC ont été développés dans le cadre de la thèse. La caractérisation dynamique de ces nouveaux modules est réalisée dans le but de servir de base à la conception d’un démonstrateur de l’Onduleur de Courant d’une puissance nominale de 60kW. Enfin, le rendement de la partie semi-conducteur de puissance est évalué par une méthode calorimétrique confirmant l’aptitude de la topologie à fonctionner à des fréquences de commutation supérieures. L’originalité de ces travaux réside principalement dans la conception, caractérisation et mise en œuvre de ce nouveau module de puissance adapté à cette topologie connue, mais peu étudiée à l’heure actuelle avec des interrupteurs au SiC
Classically, the energy conversion architecture found in photovoltaic (PV) power plants comprises a multitude of solar arrays delivering a maximum voltage of 1kV followed by a step-up chopper connected to a three-phase voltage source inverter. This two-stage conversion system (DC/DC + DC/AC) is then connected to the MV grid through a LV/MV transformer. In order to simplify the PV systems, this research work focuses on the study and implementation of a DC/AC topology employing a single conversion stage: the three-phase current source inverter (CSI). Although relatively simple, the CSI presents as major drawback the conduction losses. To deal with this problem, wide-bandgap silicon carbide (SiC) semiconductors are used, which allows to efficiently convert energy (η> 98.5%) while keeping a relatively high switching frequency (several tens of kHz). Nonetheless, since the available power semiconductor modules on the market are not compatible with the CSI, a novel 1.7kV SiC-based module is developed in the context of the thesis. Thus, the dynamic characterization of the new SiC device is carried out and serves as a basis for the design of a 60kW Current Source Inverter prototype. Finally, the inverter’s semiconductor efficiency is evaluated through a calorimetric method, confirming the ability of the topology to operate at higher switching frequencies. At the present time, little research has been conducted on the CSI implementation with SiC devices. The originality of this work lies mainly in the design, characterization and implementation of the new SiC power module adapted to this well-known inverter topology
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Muhsen, Hani [Verfasser], Josef [Akademischer Betreuer] Lutz et Mario [Gutachter] Pacas. « Three-Phase Voltage Source Inverter with Very High Efficiency Based on SiC Devices / Hani Muhsen ; Gutachter : Mario Pacas ; Betreuer : Josef Lutz ». Chemnitz : Universitätsbibliothek Chemnitz, 2016. http://d-nb.info/1213814960/34.

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Qi, Feng. « Peripheral Circuits Study for High Temperature Inverters Using SiC MOSFETs ». The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1460991531.

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Fonteneau, Xavier. « Conception d’un onduleur triphasé à base de composants SiC en technologie JFET à haute fréquence de commutation ». Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0059/document.

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Depuis le début des années 2000, les composants en carbure de silicium (SiC) sont présents sur le marché principalement sous la forme de diodes Schottky et de transistors FET. Ces nouveaux semi-conducteurs offrent des performances en commutation bien supérieures à celles des composants en silicium (Si) ce qui se traduit par une diminution des pertes et une réduction de la température de fonctionnement à système de refroidissement identique. L’utilisation de composants SiC ouvre donc la possibilité de concevoir des convertisseurs plus compacts ou à une fréquence de commutation élevée pour une même compacité. C’est avec cet objectif d’augmentation de la fréquence de commutation qu’a été menée cette étude axée sur l’utilisation de composants SiC au sein d’un onduleur triphasé. Le convertisseur sur lequel se base l’étude accepte une tension d’entrée de 450V et fournit en régime nominal un courant de sortie efficace par phase de 40 A. Le choix des composants SiC s’est porté sur des transistors JFET Normally-Off et des diodes Schottky SiC car ces composants étaient disponibles à la vente au début de ces travaux et offrent des pertes en commutation et en conduction inférieures aux autres structures en SiC. Les transistors FET possèdent une structure et des propriétés bien différentes des IGBT habituellement utilisés pour des convertisseurs de la gamme considérée notamment par leur capacité à conduire un courant inverse avec ou sans diode externe. De ce fait, il est nécessaire de développer de nouveaux outils d’aide au dimensionnement dédiés à ces composants SiC. Ces outils de calculs sont basés principalement sur les paramètres électriques et thermiques du système et sur les caractéristiques des composants SiC. Les premiers résultats montrent qu’en autorisant la conduction d’un courant inverse au sein des transistors, il est possible de diminuer le nombre de composants. Basées sur ces estimations, une maquette de bras d’onduleur a été développée et testée. Les premiers thermiques montrent que pour une puissance de 12kW, il est possible d’augmenter la fréquence de commutation de 12 kHz à 100 kHz
Since 2000, Silicon Carbide (SiC) components are available on the market mainly as Schottky diodes and FET transistor. These new devices provide better switching performance than Silicon (Si) components that leads to a reduction of losses and operating temperatures at equivalent cooling system. Using SiC components allows to a better converter integration. It is in this context that ECA-EN has started this thesis dedicated to using SiC devices in a three-phase inverter at high switching frequency. The converter object of this study is supply by a input voltage of 450V and provides a current of 40A per phase. The components used for these study are SiC Normally-Off JFET and Schottky Diodes because these devices were commercialized at the begining of this thesis and offer better switching performance than others SiC components. FET transistors have a different structure compared to traditionnal IGBT especially their capability to conduct a reverse current with or without body diode. So it is necessary to develop new tools dedicated to the design of converters built with SiC components. These tools are based on the electrical properties of the converters and the statics and dynamics characteristics of the transistor and the diode. The results show that when the transistors conduct a reverse current, the number of components/dies can be reduced. According to data, a PCB board of an inverter leg has been built and tested at ECA-EN. The thermal measurement based on the heatsink shows that the switching frequency of an inverter leg can be increased from 12 to 100 kHz for an ouput power of 12kW
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Šandera, Tomáš. « Třífázový střídač pro napájení vysokootáčkového asynchronního motoru ». Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-318175.

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The master’s thesis deals with design and realization of three-phase inverter for experimental high speed asynchronous motor with a mechanical power of 6 kW. The thesis deals with the design of the individual components of the DC link. The thesis describes the selection of suitable capacitors in the DC link. There is also a complete simulation of the inverter in the Matlab Simulink program. Part of the thesis is also the design and realization of printed circuit boards of this inverter.
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Muhsen, Hani. « Three-Phase Voltage Source Inverter with Very High Efficiency Based on SiC Devices ». Doctoral thesis, 2015. https://monarch.qucosa.de/id/qucosa%3A20425.

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This dissertation aims at designing a three-phase voltage source inverter based on the SiC devices and mainly the SiC-MOSFET. The designed inverter offers a possibility to drive the power inverter with a very high efficiency, which can reach up to 99% for 16 kW rated power. The design is dedicated to the electric vehicle application, and it aims at • Providing a comparative study on some of the current discrete SiC devices in terms of the total losses and the thermal conductivity. In addition, a behavioral study of the effective channel mobility with temperature variation in the SiC MOSFET will be investigated. • Designing a gate driver which fits with the driving requirements of the SiC-MOSFET and provides a trade-off between the switching losses and the EMI behavior. • Designing a three-phase voltage source inverter with 16 kW rated power; the design includes minimizing the inverter losses and extracts the EMI model of the power inverter by considering the effects of the parasitic parameters; moreover a short guideline for selecting the heat-sink based on the static network is introduced. • Proposing a new and simplified carried-based PWM, this will reduce the harmonics in the output waveforms and enhance the utilization of the DC-link voltage. • Proposing a new strategy for compensating the dead-time effect in carrier based-PWM and to find out the proper dead-time level in VSI based on SiC –MOSFET. • Designing faults diagnosis and protection circuits in order to protect the power inverter from the common faults; overcurrent, short-circuit, overvoltage, and overtemperature faults.
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Actes de conférences sur le sujet "Three-phase SiC Inverter"

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Shen, Yanfeng, Yunlei Jiang, Luke Shillaber, Hui Zhao et Teng Long. « QCM-Enabled SiC Three-Phase Traction Inverter ». Dans 2021 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2021. http://dx.doi.org/10.1109/ecce47101.2021.9595990.

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Gu, Mingchen, Peng Xu, Li Zhang et Kai Sun. « A SiC-based T-type three-phase three-level gridtied inverter ». Dans 2015 IEEE 10th Conference on Industrial Electronics and Applications (ICIEA). IEEE, 2015. http://dx.doi.org/10.1109/iciea.2015.7334274.

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Yin, Shan, K. J. Tseng, C. F. Tong, Rejeki Simanjorang, C. J. Gajanayake et Amit K. Gupta. « A 99% efficiency SiC three-phase inverter using synchronous rectification ». Dans 2016 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2016. http://dx.doi.org/10.1109/apec.2016.7468281.

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Ni, Ze, Xiaofeng Lyu, Om Prakash Yadav et Dong Cao. « Review of SiC MOSFET based three-phase inverter lifetime prediction ». Dans 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2017. http://dx.doi.org/10.1109/apec.2017.7930819.

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Kim, Sang Min, Rolando Burgos, Jinkyu Seo et Taesuk Kwon. « Design of Switching Current Sensor for Three-Phase SiC Inverter ». Dans 2021 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2021. http://dx.doi.org/10.1109/apec42165.2021.9487414.

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Muhsen, Hani, Sebastian Hiller et Josef Lutz. « Three-phase voltage source inverter using SiC MOSFETs — Design and Optimization ». Dans 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe). IEEE, 2015. http://dx.doi.org/10.1109/epe.2015.7309466.

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Cilio, Edgar S., Gavin Mitchell, Alex Lostetter, Roberto Schupbach et Brice R. McPherson. « High Temperature, High Frequency SiC Three Phase Inverter for Aircraft Applications ». Dans Power Systems Conference. 400 Commonwealth Drive, Warrendale, PA, United States : SAE International, 2010. http://dx.doi.org/10.4271/2010-01-1798.

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He, Ning, Yawen Li, Chengrui Du, Chao Liu, Changsheng Hu et Dehong Xu. « SiC MOSFET zero-voltage-switching SVM controlled three-phase grid inverter ». Dans 2016 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2016. http://dx.doi.org/10.1109/ecce.2016.7855431.

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Zhang, Hui, Leon M. Tolbert, Jung Hee Han, Madhu S. Chinthavali et Fred Barlow. « 18 kW three phase inverter system using hermetically sealed SiC phase-leg power modules ». Dans 2010 IEEE Applied Power Electronics Conference and Exposition - APEC 2010. IEEE, 2010. http://dx.doi.org/10.1109/apec.2010.5433365.

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Yang, Peng, Wenlong Ming, Jun Liang et Jianzhong Wu. « A SiC-based Neutral Leg for the Three-phase Four-wire Inverter ». Dans IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2019. http://dx.doi.org/10.1109/iecon.2019.8927531.

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