Littérature scientifique sur le sujet « Thin film stacking »
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Articles de revues sur le sujet "Thin film stacking"
JIANG, B., J. L. PENG, L. A. BURSILL et H. WANG. « MICROSTRUCTURE AND PROPERTIES OF FERROELECTRIC Bi4Ti3O12 THIN FILMS ». Modern Physics Letters B 13, no 26 (10 novembre 1999) : 933–45. http://dx.doi.org/10.1142/s0217984999001147.
Texte intégralLee, Jin Woo, Yun Hae Kim et Chang Wook Park. « Electrical and Optical Properties of ZnO:Ag Thin-Films Depend on Lamination Formation by DC Magnetron Sputtering ». Advanced Materials Research 1110 (juin 2015) : 211–17. http://dx.doi.org/10.4028/www.scientific.net/amr.1110.211.
Texte intégralArnold, Marcel, Z. L. Wang, W. Tong, B. K. Wagner, S. Schön et C. J. Summers. « Creation of Stacking Faults at Substrate Steps in Zns Thin Films Epitaxially Grown on GaAs (001) ». Microscopy and Microanalysis 3, S2 (août 1997) : 633–34. http://dx.doi.org/10.1017/s1431927600010059.
Texte intégralMcIntyre, P. C., et M. J. Cima. « Microstructural inhomogeneities in chemically derived Ba2YCu3O7−x thin films : Implications for flux pinning ». Journal of Materials Research 9, no 11 (novembre 1994) : 2778–88. http://dx.doi.org/10.1557/jmr.1994.2778.
Texte intégralLiu, Y., B. W. Robertson et D. J. Sellmyer. « HREM study of epitaxy in Co-Sm // Cr thin films ». Proceedings, annual meeting, Electron Microscopy Society of America 53 (13 août 1995) : 488–89. http://dx.doi.org/10.1017/s0424820100138816.
Texte intégralNguyen, Thang, Walter Varhue, Edward Adams, Mark Lavoie et Stephen Mongeon. « Growth of heteroepitaxial GaSb thin films on Si(100) substrates ». Journal of Materials Research 19, no 8 (août 2004) : 2315–21. http://dx.doi.org/10.1557/jmr.2004.0307.
Texte intégralWang, Xintai, Sara Sangtarash, Angelo Lamantia, Hervé Dekkiche, Leonardo Forcieri, Oleg V. Kolosov, Samuel P. Jarvis et al. « Thermoelectric properties of organic thin films enhanced by π–π stacking ». Journal of Physics : Energy 4, no 2 (23 mars 2022) : 024002. http://dx.doi.org/10.1088/2515-7655/ac55a3.
Texte intégralTajari Mofrad, Mohammad Reza, Jaber Derakhshandeh, Ryoichi Ishihara, Alessandro Baiano, Johan van der Cingel et Kees Beenakker. « Stacking of Single-Grain Thin-Film Transistors ». Japanese Journal of Applied Physics 48, no 3 (23 mars 2009) : 03B015. http://dx.doi.org/10.1143/jjap.48.03b015.
Texte intégralWada, Takahiro, Takayuki Negami et Mikihiko Nishitani. « Growth defects in CuInSe2 thin films ». Journal of Materials Research 9, no 3 (mars 1994) : 658–62. http://dx.doi.org/10.1557/jmr.1994.0658.
Texte intégralHua, Zhong, Xiangcheng Meng, Yaming Sun, Wanqiu Yu et Dong Long. « Properties of Cu2ZnSnS4 thin films prepared by magnetron sputtering and sulfurizing the precursors with different stacking sequences ». Modern Physics Letters B 28, no 26 (10 octobre 2014) : 1450210. http://dx.doi.org/10.1142/s0217984914502108.
Texte intégralThèses sur le sujet "Thin film stacking"
Abbas, Ali. « The microstructure of thin film cadmium telluride photovoltaic materials ». Thesis, Loughborough University, 2014. https://dspace.lboro.ac.uk/2134/16389.
Texte intégralZhang, Shengli. « Study the growth process and interface properties of Cu2ZnSnS4 solar cells fabricated by magnetron sputtering ». Thesis, Queensland University of Technology, 2018. https://eprints.qut.edu.au/123667/1/Shengli_Zhang_Thesis.pdf.
Texte intégralDoumit, Nicole. « Etude de l’empilement de couches minces de cuivre sur alumine : applications à la réalisation de composants passifs haute température ». Thesis, Saint-Etienne, 2015. http://www.theses.fr/2015STET4004/document.
Texte intégralThis thesis is a study of copper thin film on an alumina substrate in order to realize passive components operating at high temperature. A study of copper thin films was made by simulation using COMSOL Multiphysics software and experimentally using specific characterization benches. This study highlighted an increase of Von Mises equivalent stresses with temperature and with copper thickness. Simulations also show a relaxation of residual stresses after one hour of annealing. Experimental results show an increase of adhesion in function of temperature and an absence of cracks. On the other hand, electrical studies for integrated components were performed either after annealing or in thermal cycling (25-200°C). These measures highlighted inductance stability regardless of heat treatment type. The resistance increases with temperature and returns, after thermal cycling, to its initial value. This is not the case after annealing; the resistance increases but cannot return to its initial value after cooling. Thus, this work has concluded that tested components remain functional at high temperature without any deterioration
Thompson, John O. « The importance of elemental stacking order and layer thickness in controlling the formation kinetics of copper indium diselenide / ». Connect to title online (Scholars' Bank) Connect to title online (ProQuest), 2007. http://hdl.handle.net/1794/6197.
Texte intégralTypescript. Includes vita and abstract. Includes bibliographical references (leaves 81-84). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.
Ruano, Merchán Catalina. « Synthesis and characterization of 2D complex oxide films in the SrTiO₃/Pt(111)/Al₂O₃(0001) system ». Electronic Thesis or Diss., Université de Lorraine, 2022. http://www.theses.fr/2022LORR0039.
Texte intégralThe formation of 2D dodecagonal quasicrystalline oxides (OQC), as related approximant phases were recently reported in thin films derived from BaTiO₃ or SrTiO₃ perovskites deposited on (111)-oriented Pt single crystal. These 2D structures add novel functionalities to the ultra-thin films of ternary oxides supported on metals when approaching the 2D limit. Here, we use a thin film stacking approach in which the single crystal is replaced by a Pt (111) buffer layer, deposited by MBE on an Al₂O₃(0001) substrate. An ultra-thin film of SrTiO₃ was subsequently deposited by PLD. The film stacking is fully characterized by diffraction (LEED, RHEED, XRD),microscopy (STM, TEM, Nano-SAM) and spectroscopy (XPS, AES) techniques. We report the discovery of three OQC approximants obtained by reducing this system by annealing at high temperature under vacuum conditions. These phases can be described by three different tilings constructed with NGT elements. An atomic model determined by DFT, in agreement with the experimental observations, is proposed for each approximant. This thin-film approach can be useful for exploring the formation of complex 2D oxide phases in other metal-oxide combinations
Prilliman, Gerald Stephen. « Synchrotron X-ray diffraction studies of phase transitions and mechanical properties of nanocrystalline materials at high pressure ». Berkeley, Calif. : Oak Ridge, Tenn. : Lawrence Berkeley National Laboratory ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2003. http://www.osti.gov/servlets/purl/825137-DcNEaM/native/.
Texte intégralPublished through the Information Bridge: DOE Scientific and Technical Information. "LBNL--55022" Prilliman, Gerald Stephen. USDOE Director. Office of Science. Office of Basic Energy Sciences (US) 09/01/2003. Report is also available in paper and microfiche from NTIS.
Lai, Yi-Ming, et 賴奕名. « Study of Stacking ZnO Active Layer of Thin Film Transistor ». Thesis, 2011. http://ndltd.ncl.edu.tw/handle/27698785732609826334.
Texte intégralChen, Huay-Zhong, et 陳慧中. « Influence of Self-Assembled Monolayers on the Stacking Orientation of Organic Semiconductor Thin Film ». Thesis, 2004. http://ndltd.ncl.edu.tw/handle/76062121532334033403.
Texte intégral國立臺灣大學
化學研究所
92
In this thesis, we mainly studied the stacking orientation of two kinds of organic semiconductor thin films: ?sexithiophene and copper phthalocyanine (CuPc), by thermal evaporation on gold and modified gold surface such as self-assembled monolayer (SAM) and poly-methylene film. We determined the organic semiconductor thin films orientation by using reflection absorption IR (RAIR), Atomic Force Microscopy (AFM) image, Near Edge X-Ray Absorption Fine Structure (NEXAFS) spectra as well as Powder X-Ray Diffraction (XRD) spectra. On the gold surface, all of the molecules were stacking parallel to the surface, but on self-assembled monolayer, they were stacking near perpendicular to the surface. As we deposit the ?sexithiophene on rubbed poly-methylene surfaces, the RAIR showed that the molecules were oriented parallel to the poly-methylene surface. Moreover, the AFM images showed that the crystals of ?sexithiophene were aligning perpendicular to the rubbing direction. The different molecular stacking orientation of the thin films also gave a distinction of the optical properities. For ?sexithiophene, when the molecules were parallel to the surface, a much stronger fluorescence intensity was obtained. As for CuPc, a red shift in UV-vis spectra was observed when the molecules were perpendicular to the surface.
Su, Zhe-Min, et 蘇哲民. « Prepartion of Cu2ZnSnS4 (CZTS) Photon Absorption Layer for Thin-film Solar Cells by Stacking Layer Sputtering Method ». Thesis, 2015. http://ndltd.ncl.edu.tw/handle/4z7n8n.
Texte intégral國立交通大學
材料科學與工程學系所
103
This study prepares the precursors comprised of Cu2S, ZnS and SnS2 stacking layers to form the Cu2ZnSnS4 (CZTS) photon absorption layer for thin-film solar cell via a sulfurization at 570°C. The influence of stacking-layer struture, sulfurization temperature and time duration as well as the thickness of SnS2 on the microstructure and composition of CZTS thin film was investigated. For the samples subjected to the sulfurization, the scanning electron microscopy found that the ZnS/SnS2/Cu2S (4-ZTC) may form single-layer CZTS thin film whereas the rest of stacking layer structures are inappropriate for CZTS formation due to the delamination from substarte or incomplete alloy reactions. The sulfurization at 570°C for 60 min was identified as the best heat-treatment condition since it provides good crystallinity and is able to avoid severe Sn loss in CZTS layer. As to the influence of thickness of SnS2, x-ray diffraction and Raman spectroscopy analyses found that single-phase CZTS with the grain size of 1 micro meter may form in the 4-ZTC stacking layer containing 0.45-micro meter thick SnS2. Energy dispersive spectroscopy revealed the composition of such a CZTS film is Cu-poor/Zn-rich with the stoichiometry of Cu24.46Zn14.52Sn11.53S49.7. UV-visible spectroscopy indicated the bandgap of CZTS film is 1.49 eV. Hall effect measurement found that the CZTS layer is a p-type semiconductor with major carrier concentration of 7.37x10^15 cm^-3 and carrier mobility of 4.47 cm2V^-1sec^-1.
Hsiao, Ching Hung, et 蕭景鴻. « The effect of strain relaxation induced stacking fault in (001) epitaxial FePd thin film on magnetization reversal ». Thesis, 2016. http://ndltd.ncl.edu.tw/handle/47855958965869764866.
Texte intégral國立清華大學
材料科學工程學系
104
In this study, [Fe 14 Å /Pd19 Å]5 and [Fe 3 Å /Pd 4 Å]5 thin films were grown at elevated temperatures by an ultra-high vacuum electron beam deposition on MgO (100) substrates. When [Fe14 Å /Pd19 Å]5 was prepared at 400 oC, the upper part of thin film remains layer structure indicating the intermixing phenomenon is not uniform through the elemental mapping analysis, and [Fe14 Å /Pd19 Å]5 film exhibits magnetic perpendicular anisotropy until the grown temperature is 600 oC. As [Fe 3 Å /Pd 4 Å]5 was prepared at 400 oC, [001] L10 FePd with perpendicular anisotropy and out-of-plane coercivity (Hc,) of 17504.7 Oe is obtained implying the intermixing phenomenon is improved. As, the prepared temperatures of [Fe 3 Å /Pd 4 Å]5 are 600 oC and 700 oC, the Hc, are 34007.0 and 600015.5Oe, respectively. One of the FePd films prepared at 700 oC was then post annealed at 700 oC for 5 hs, but Hc, drops apparently to 110011.9 Oe. As [Fe 3 Å /Pd 4 Å]5 prepared at 700 oC with and without post annealed, the L10 ratio are 0.94 and 0.71, respectively. In addition, Ku have less relevance to Hc, in FePd films. This results indicate both L10 ratio and Ku have less dependence on Hc, of FePd film here. FePd thin films are island structure and the grain boundary is composed of MgO (substrate), and average grain sizes were about 15-17 nm indicating similar grain sizes as prepared at 400 and 700 oC with or without post-annealing, respectively. Therefore, the effects of grain size and grain boundary can be rule out. Defects such as dislocation and stacking fault will be generated to reduce the mismatch strain during the growth process as thickness is about ~22 Å. According to the defect density analyzed by transimission electron microscopy, the stacking fault densities (ρS.F.) are closely related to Hc,, in addition Hc, and ρS.F. are increased as growth temperature raising. And, the ρS.F. are 1.050.04 nm-2 and 0.510.06 nm-2 as prepared at 700 oC treated without or with post annealing, respectively. Hc, is proportional to 〖ρ 〗_(S.F.)^1.5, indicating the strong pinning effect, therefore, stacking faults act as domain wall strong pinning sites and it will increase the resistance of magnetic domain wall motion during magnetization reversal, resulting in higher Hc,. By high angle annular dark field analysis, an intrinsic stacking fault was found and its bounded is composed of a pair of 1/2 <110> partial dislocations as FePd film prepared at 700 oC, showing total dislocation can be dissociated into stacking fault via climbing dissociation mechanism. Therefore, ρS.F. increase as growth temperature rising. As a FePd film was treated with post annealing, ρS.F. significantly decreases by 1/6 [112 ̅] and 1/3 [111] partial dislocations reacting with each other, leading to less strong pinning sites and lower Hc,. Because stacking faults acting as strong pinning sites, ρS.F. and Hc,can be manipulated via adjusting growth rate of [Fe 3 Å/Pd 4 Å]5 films. At lower growth rate (0.005 Å/s), the opportunity of partial dislocation interaction in FePd flm was raised, which is similar to FePd film treated post annealing, leading to lower Hc, (1400±12.0 Oe). Besides, it takes some time for dislocation dissociation by climbing, therefore, higher growth rate (0.03 Å/s) reduces climbing dissociation and ρS.F., causing lower Hc, (1920±7.3 Oe). (Therefore, an optimum value of Hc,exists at the moderate growth rate) To reducing ordering temperature, adding Cu3N layer or N2 in FePd film and then treated with post annealing are also studied. When adding thermal dissociated Cu3N layer to FePd film, which was prepared by electron beam deposition([Fe 3 Å/Pd 4 Å]4/Cu3N (15 Å)/ [Fe 3 Å/Pd 4 Å]) and treated post annealing for 20 min, L10 FePdCu phase is obtained. By high angle annular dark field analysis, Cu atom tends to occupy the Fe lattice site, therefore, the spin-orbital coupling between Fe and Pd is reduced, leading to soft magnetic behavior. [Fe 8 Å /Pd 4 Å]8 films with some nitrogen were prepared via sputtering and then treated with post annealing at 400 oC for 1 h. And, (111) oriented fcc FePd film with larger grain size is obtained as adding N2 or raising N2 ratio, indicating the addition of nitrogen can promote atomic inter-diffusion. But, FePd films with grain size about 3-8 nm are similar to the smallest thermal stable size (~5 nm) of L10 FePd, resulting in soft magnetic behavior.
Chapitres de livres sur le sujet "Thin film stacking"
Ruan, Jeng, et Kao-Shuo Chang. « Mutually Influenced Stacking and Evolution of Inorganic/Organic Crystals for Piezo-Related Applications ». Dans Functional Thin Films Technology, 127–49. New York : CRC Press, 2021. http://dx.doi.org/10.1201/9781003088080-5.
Texte intégralÅkervall, Lisa. « Post-Cinematic Unframing ». Dans Theorizing Film Through Contemporary Art. Nieuwe Prinsengracht 89 1018 VR Amsterdam Nederland : Amsterdam University Press, 2020. http://dx.doi.org/10.5117/9789462989467_ch12.
Texte intégral« Mechanical Behavior of High-Entropy Alloys—Questions and Answers ». Dans Mechanical Behavior of High-Entropy Alloys : Key Topics in Materials Science and Engineering, 21–47. ASM International, 2022. http://dx.doi.org/10.31399/asm.tb.mbheaktmse.t56030021.
Texte intégralJahid Akhtar, Abu. « Graphene-Based Materials for Supercapacitor ». Dans Supercapacitors [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.98011.
Texte intégralBohacs, K. M., et G. J. Grabowski. « 14 Green River Formation, Laney Member, Eocene, Wyoming, USA—A Balanced-Fill Lake System with Microbial Carbonate and Oil Shale, an Analog for Part of the South Atlantic Pre-Salt ». Dans Sequence Stratigraphy : Applications to Fine-Grained Rocks, 505–36. The American Association of Petroleum Geologists and Brazilpetrostudies, 2022. http://dx.doi.org/10.1306/137123091283.
Texte intégralActes de conférences sur le sujet "Thin film stacking"
Cheng-Ta Ko, Ying-Ching Shih, Jing-Yao Chang, Tzu-Ying Kuo, Yu-Hua Chen, A. Ostmann et D. Manessis. « Stacking of ultra-thin film packages ». Dans 2008 2nd Electronics Systemintegration Technology Conference. IEEE, 2008. http://dx.doi.org/10.1109/estc.2008.4684337.
Texte intégralShih, Ying-Ching, Tzu-Ying Kuo, Yin-Po Hung, Jing-Yao Chang, Chih-Yuan Cheng, Kuo-Chyuan Chen, Ching-Kuan Lee et al. « Manufacturing and stacking of ultra-thin film packages ». Dans 2009 IEEE 59th Electronic Components and Technology Conference (ECTC 2009). IEEE, 2009. http://dx.doi.org/10.1109/ectc.2009.5074201.
Texte intégralHsiao, Ching Hung, et Chuenhou Hao Ouyang. « Stacking Faults Induced Domain Wall Pinning in (001) FePd Thin Film ». Dans 2016 International Conference of Asian Union of Magnetics Societies (ICAUMS). IEEE, 2016. http://dx.doi.org/10.1109/icaums.2016.8479688.
Texte intégralShibuya, A., A. Ohuchi et K. Takemura. « 3D-Stacking Process for Si Interposer with Integrated Thin-film Capacitors ». Dans 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.c-1-2.
Texte intégralStoilov, Vesselin. « Ferromagnetic Shape Memory Thin Film In-Plane Actuators : Assessment of Mechanical Output ». Dans ASME 2007 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/detc2007-35467.
Texte intégralGutkin, Mikhail Y., Kristina N. Mikaelyan et Ilya A. Ovid'ko. « Misfit defect configurations associated with stacking faults in thin crystalline film/substrate systems ». Dans International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, sous la direction de Alexander I. Melker. SPIE, 1999. http://dx.doi.org/10.1117/12.347456.
Texte intégralYarmolenko, Sergey, Kevin Galdamez, Sudheer Neralla, Zhigang Xu, Devdas Pai et Jagannathan Sankar. « Study of the Formation of Long Period Stacking Ordered Phases in Sputtered Thin Film Mg-Gd-Zn Alloys ». Dans ASME 2017 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/imece2017-71987.
Texte intégralMurayama, Takahide, Akiyoshi Suzuki, Toshiyuki Sakuishi et Yasuhiro Morikawa. « Micro thin-film li-ion battery stacking challenge by backside via last TSV technology ». Dans 2017 12th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). IEEE, 2017. http://dx.doi.org/10.1109/impact.2017.8255910.
Texte intégralWatts, Michael J., Stephen R. Yeandel, Roger Smith, J. Michael Walls et Pooja M. Panchmatia. « Atomistic Insights of Multiple Stacking Faults in CdTe Thin-Film Photovoltaics : A DFT Study ». Dans 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8547934.
Texte intégralSong, Young Min, Gil Ju Lee, Yeong Jae Kim et Young Jin Yoo. « Reflective Color Filters with Enlarged Color Gamut Enabled by Stacking Silicon Nanowires on Thin-film Coatings ». Dans 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring). IEEE, 2019. http://dx.doi.org/10.1109/piers-spring46901.2019.9017454.
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