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Littérature scientifique sur le sujet « Thin film depositions »

Auteur : Grafiati
Publié le 9 mars 2023
Mis à jour le 10 mars 2023

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Articles de revues sur le sujet "Thin film depositions"

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ILIESCU, Ciprian. « A COMPREHENSIVE REVIEW ON THIN FILM DEPOSITIONS ON PECVD REACTORS ». Annals of the Academy of Romanian Scientists Series on Science and Technology of Information 14, no 1-2 (2021) : 12–24. http://dx.doi.org/10.56082/annalsarsciinfo.2021.1-2.12.

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The deposition of thin films by Plasma Enhanced Chemical Vapor Deposition (PECVD) method is a critical process in the fabrication of MEMS or semiconductor devices. The current paper presents an comprehensive overview of PECVD process. After a short description of the PECVD reactors main layers and their application such as silicon oxide, TEOS, silicon nitride, silicon oxynitride, silicon carbide, amorphous silicon, diamond like carbon are presented. The influence of the process parameters such as: chamber pressure, substrate temperature, mass flow rate, RF Power and RF Power mode on deposition rate, film thickness uniformity, refractive index uniformity and film stress were analysed. The main challenge of thin films PECVD deposition for Microelectromechanical Systems (MEMS)and semiconductor devices is to optimize the deposition parameters for high deposition rate with low film stress which and if is possible at low deposition temperature.
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Kuchakova, Iryna, Maria Daniela Ionita, Eusebiu-Rosini Ionita, Andrada Lazea-Stoyanova, Simona Brajnicov, Bogdana Mitu, Gheorghe Dinescu et al. « Atmospheric Pressure Plasma Deposition of Organosilicon Thin Films by Direct Current and Radio-frequency Plasma Jets ». Materials 13, no 6 (13 mars 2020) : 1296. http://dx.doi.org/10.3390/ma13061296.

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Thin film deposition with atmospheric pressure plasmas is highly interesting for industrial demands and scientific interests in the field of biomaterials. However, the engineering of high-quality films by high-pressure plasmas with precise control over morphology and surface chemistry still poses a challenge. The two types of atmospheric-pressure plasma depositions of organosilicon films by the direct and indirect injection of hexamethyldisiloxane (HMDSO) precursor into a plasma region were chosen and compared in terms of the films chemical composition and morphology to address this. Although different methods of plasma excitation were used, the deposition of inorganic films with above 98% of SiO2 content was achieved for both cases. The chemical structure of the films was insignificantly dependent on the substrate type. The deposition in the afterglow of the DC discharge resulted in a soft film with high roughness, whereas RF plasma deposition led to a smoother film. In the case of the RF plasma deposition on polymeric materials resulted in films with delamination and cracks formation. Lastly, despite some material limitations, both deposition methods demonstrated significant potential for SiOx thin-films preparation for a variety of bio-related substrates, including glass, ceramics, metals, and polymers.
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Gutwirth, Jan, Magdaléna Kotrla, Tomáš Halenkovič, Virginie Nazabal et Petr Němec. « Tailoring of Multisource Deposition Conditions towards Required Chemical Composition of Thin Films ». Nanomaterials 12, no 11 (27 mai 2022) : 1830. http://dx.doi.org/10.3390/nano12111830.

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The model to tailor the required chemical composition of thin films fabricated via multisource deposition, exploiting basic physicochemical constants of source materials, is developed. The model is experimentally verified for the two-source depositions of chalcogenide thin films from Ga–Sb–Te system (tie-lines GaSb–GaTe and GaSb–Te). The thin films are deposited by radiofrequency magnetron sputtering using GaSb, GaTe, and Te targets. Prepared thin films are characterized by means of energy dispersive X-ray analysis coupled with a scanning electron microscope to determine the chemical composition and by variable angle spectroscopic ellipsometry to establish film thickness. Good agreement between results of calculations and experimentally determined compositions of the co-deposited thin films is achieved for both the above-mentioned tie-lines. Moreover, in spite of all the applied simplifications, the proposed model is robust to be generally used for studies where the influence of thin film composition on their properties is investigated.
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Usha Rajalakshmi, P., et Rachel Oommen. « Structural and Optical Characterization of Chemically Deposited Cuprous Oxide (Cu2O) Thin Film ». Advanced Materials Research 678 (mars 2013) : 118–22. http://dx.doi.org/10.4028/www.scientific.net/amr.678.118.

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Thin films of cuprous oxide are grown on microscope glass slides by chemical bath deposition technique. Molar solutions of copper nitrate, hydrazine and TEA constituted the chemical bath. The depositions are made by optimizing the concentration of precursor solution. X-ray diffraction measurements revealed the phase formation in the oxide films. The optical characteristics of Cu2O films are analyzed by means of UV-Vis-NIR spectrophotometer. The effect of annealing on the structural and optical properties of the film is investigated. The calculated direct optical band gap of the films is in the range of 2.4-1.8 eV.
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Tuttle, B. A., et R. W. Schwartz. « Solution Deposition of Ferroelectric Thin Films ». MRS Bulletin 21, no 6 (juin 1996) : 49–54. http://dx.doi.org/10.1557/s088376940004608x.

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Solution deposition has been used by almost every electroceramic research-and-development organization throughout the world to evaluate thin films. Ferrite, high-temperature-superconductor, dielectric, and antireflection coatings are among the electroceramics for which solution deposition has had a significant impact. Lithium niobate, lithium tantalate, potassium niobate, lead scandium tantalate, lead magnesium niobate, and bismuth strontium tantalate are among the ferroelectric thin films processed by solution deposition. However, lead zir-conate titanate (PZT) thin films have received the most intensive study and will be emphasized in this article.Solution deposition facilitates stoichiometric control of complex mixed oxides better than other techniques such as sputter deposition and metalorganic chemical vapor deposition (MOCVD). Solution deposition is a fast, cost-efficient method to survey extensive ranges of film composition. Further it is a process compatible with many semiconductor-fabrication technologies, and it may be the deposition method of choice for applications that do not require conformal depositions and that have device dimensions of 2 μm or greater. Specific applications for which solution deposition is commercially viable include decoupling capacitors, uncooled pyroelectric infrared detectors, piezoelectric micromotors, and chemical microsensors based on surface-acoustic-wave technology. Reviews of some of the more fundamental aspects of solution-deposition processing may be found in the scientific literature.
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Hsieh, Chi Hua, Li Te Tsou, Sheng Hao Chen, Huai Yi Chen, Yao Jen Lee, Chiung Hui Lai et Horng Show Koo. « Comparison of Characteristics of Rapid Thermal and Microwave Annealed Amorphous Silicon Thin Films Prepared by Electron Beam Evaporation and Low Pressure Chemical Vapor Deposition ». Advanced Materials Research 663 (février 2013) : 372–76. http://dx.doi.org/10.4028/www.scientific.net/amr.663.372.

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In this study we use chemical and physical vapor depositions to fabricate amorphous silicon (a-Si) films. We also use traditional rapid thermal annealing (RTA) and advanced microwave annealing (MWA) to activate or crystallize a-Si films and then observe their sheet resistances and crystallization. We discovered, although the cost of films fabricated by electron beam (e-beam) evaporation is relatively lower than by chemical vapor deposition (CVD), the effects of the former method are poorer whether in sheet resistance or film crystallization. In addition, only at the doping layer prepared by CVD can film crystallization degree produced by MWA match RTA.
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Nadzari, Khairul Aizat, Muhammad Firdaus Omar, Nor Shahira Md Rudin et Abd Khamim Ismail. « Structural Analysis of DLC Thin Film Using X-Ray Reflectivity and Raman Spectroscopy Techniques ». Key Engineering Materials 908 (28 janvier 2022) : 543–48. http://dx.doi.org/10.4028/p-x8wahl.

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The characteristics of sputtered amorphous diamond-like carbon-containing copper (DLC: Cu films) films deposited on Si (100) substrates and Si (111) in argon gas-filled chamber using carbon target under different substrates deposition time, and RF power. The samples were deposited by RF magnetron sputtering and analyzed using Raman spectroscopy and X-ray reflectivity (XRR) methods. Different parameters of depositions were used to study the structure, thickness, roughness, and density of the samples. The Cu preliminary layer act as a catalyst to growth the DLC thin-film analyzed using XRR analysis to measure thickness, roughness, and density of the thin films. The film structures of the samples were analyzed using Raman spectroscopy with a 532nm laser source. Gaussian peak shapes were used in Raman spectrum fitting to analyzed to measure the D band and G band for both samples. The Films thickness, roughness, and mass density were studied by XRR techniques using XRD to acquire the multilayer structure of thin films grown by magnetron sputtering.
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Soonmin, Ho. « Recent Advances in the Growth and Characterizations of SILAR-Deposited Thin Films ». Applied Sciences 12, no 16 (16 août 2022) : 8184. http://dx.doi.org/10.3390/app12168184.

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Many researchers have reported on the preparation and characterization of thin films. The prepared thin films could be used in lasers, cathodic ray tubes, solar cells, infrared windows, ultraviolet light emitting diodes, sensors, supercapacitors, biologic applications, and optoelectronic applications. The properties of these thin films strongly depend on the deposition techniques. Throughout the years, many investigations into the production of various types of thin films (by using the successive ionic layer adsorption and reaction (SILAR) method) were conducted. This method attracts interest as it possesses many advantages when compared to other deposition methods. For example, large area depositions could be carried out in any substrates at lower temperatures via inexpensive instruments; moreover, a vacuum chamber is not required, it has an excellent growth rate, and the unique film properties could be controlled. In this work, metal sulfide, metal selenide, metal oxide, and metal telluride were deposited on substrates by using the SILAR method. According to the findings, both thick and thin films could be synthesized under specific conditions during the experiment. Additionally, the results showed that the number of deposition cycles, rinsing times, immersion times, and concentrations of the precursors affected the crystallinities, grain sizes, film thicknesses, surface roughness, and shapes of the obtained films. These films could be used in solar cell applications with high power conversion efficiency due to the appropriate band gap value and high absorption coefficient value.
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Gent, Enno, Dereje H. Taffa et Michael Wark. « Multi-Layered Mesoporous TiO2 Thin Films : Photoelectrodes with Improved Activity and Stability ». Coatings 9, no 10 (28 septembre 2019) : 625. http://dx.doi.org/10.3390/coatings9100625.

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This work aims at the identification of porous titanium dioxide thin film (photo)electrodes that represent suitable host structures for a subsequent electrodeposition of plasmonic nanoparticles. Sufficient UV absorption and electrical conductivity were assured by adjusting film thickness and TiO 2 crystallinity. Films with up to 10 layers were prepared by an evaporation-induced self-assembly (EISA) method and layer-by-layer deposition. Activities were tested towards the photoelectrochemical oxidation of water under UV illumination. Enhanced activities with each additional layer were observed and explained with increased amounts of immobilized TiO 2 and access to more active sites as a combined effect of increased surface area, better crystallinity and improved transport properties. Furthermore, films display good electrochemical and mechanical stability, which was related to the controlled intermediate thermal annealing steps, making these materials a promising candidate for future electrochemical depositions of plasmonic noble metal nanoparticles that has been further demonstrated by incorporation of gold.
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Ali, N., M. A. Iqbal, S. T. Hussain, M. Waris et S. A. Munair. « Optoelectronic Properties of Cadmium Sulfide Thin Films Deposited by Thermal Evaporation Technique ». Key Engineering Materials 510-511 (mai 2012) : 177–85. http://dx.doi.org/10.4028/www.scientific.net/kem.510-511.177.

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The substrate temperature in depositions of thin films plays a vital role in the characteristics of deposited films. We studied few characteristics of cadmium sulphide thin film deposited at different temperature (150°C-300°C) on corning 7059 glass substrate. We measured transmittance, absorbance, band gap and reflectance via UV spectroscopy. It was found that the transmittance for 300nm to 1100nm was greater than 80%. The resistivity and mobility was calculated by Vander Pauw method which were 10-80 cm and 2-60 cm2V-1S-1 respectively. The thermoelectric properties of the film were measured by hot and cold probe method which shows the N-type nature of the film.
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Thèses sur le sujet "Thin film depositions"

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Imam, Mewlude. « CVD Chemistry of Organoborons for Boron-Carbon Thin Film Depositions ». Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-141548.

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Boron-carbon thin films enriched with 10B are potential neutron converting layers for 10B-based solid state neutron detectors given the good neutron absorption cross section of 10B atoms in thin films. The common neutron-transparent base material, Al (melting point 660 °C), limits the deposition temperature and the use of chlorinated precursors forming corrosive by-products such as HCl. Therefore, the organoborons triethylboron B(C2H5)3 (TEB) and trimethylboron B(CH3)3 (TMB) are evaluated as precursors for CVD of BxC films. In order to get a complete understanding of the CVD behaviour of these precursors for deposition of boron containing films, both thermal CVD and plasma CVD of BxC films have been demonstrated. A gas phase chemical mechanism at the corresponding thermal CVD conditions was proposed by quantum chemical calculations while chemical mechanism in the plasma was suggested based on plasma composition obtained from Optical emission spectroscopy (OES). The behaviours of TEB and TMB in thermal CVD are investigated by depositing BxC films in both H2 and Ar atmospheres, respectively. Films deposited using TEB within a temperature window of 600 – 1000 °C are X-ray amorphous with 2.5 ≤ x ≤ 4.5. The impurity level of H is less than 1 at. % above 600 °C. Calculations predict that the gas phase reactions are dominated by β-hydride eliminations of C2H4 to yield BH3. In addition, a complementary bimolecular reaction path based on H2 assisted C2H6 elimination to BH3 is also present at lower temperatures in the presence of hydrogen molecules. As for films deposited with TMB, dense, amorphous, boron rich (B/C = 1.5-3) films are obtained at 1000 °C in both H2 and Ar atmosphere.  The quantum chemical calculations suggest that the TMB molecule is mainly decomposed by unimolecular α- elimination of CH4 complemented by H2 assisted elimination of CH4. Plasma CVD of BxC thin films has been studied using both TMB and TEB as single-source precursors in an Ar plasma at temperatures lower than that allowed by thermal CVD. The effect of plasma power, TMB/TEB and Ar gas flow on film composition and morphology are investigated. The highest B/C ratio of 1.9 is found for films deposited at highest plasma power (2400 W) and high TMB flow (7 sccm). The H content in the films stays almost constant at 15±5 at. %. The B-C bonding is dominant in the films while small amounts of C-C and B-O exist, likely due to formation of amorphous carbon and surface oxidation. Film density is determined as 2.16±0.01 g/cm3 and the internal compressive stresses are measured to be less than 400 MPa. OES shows that TMB is decomposed to mainly atomic H, C2, BH, and CH. A plasma chemical model for decomposition of the TMB is constructed using a combination of film and plasma composition. It is suggested that the decomposition of TMB starts with dehydrogenation of the methyl groups followed by breakage of the B-C bonds to form the CH radicals. This bond breaking is at least partly assisted by hydrogen in forming the BH radicals. When films are deposited using TEB flow of 5 and 7 sccm, the B/C ratio is found to be plasma power dependent while the carbon content is almost not affected. The highest B/C ratio of 1.7 is obtained at the highest power applied (2400 W) and attributed to better dissociation of TEB at higher plasma power. The H content in the films is within 14-20 at. %. The density of films is increased to 2.20 g/cm3 with increasing plasma power and attributed to a higher energetic surface bombardment during deposition. The oxygen content in the film is reduced to less than 1 at. % with increasing plasma power due to the densification of  the films preventing surface oxidation upon air exposure. Plasma composition from OES shows that the TEB molecules are also dissociated mainly to BH, CH, C2 and H. A plasma chemical model where the first ethyl group is split off by β-hydrogen elimination to form C2H4, which is further dehydrogenated to C2H2 and  forms C2 and CH is suggested. The BH species is assumed to be formed by the dehydrogenation of remaining ethyl groups and breakage of the remaining B-C bonds to form BH.
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Choi, Y. J. « Very high frequency plasma enhanced chemical vapour depositions for thin film transistors ». Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597635.

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Hydrogenated amorphous silicon (a-Si:H) is increasingly being used in applications that require large-area, thin-film semiconductor. It can be deposited easily, at low temperature and low cost, on inexpensive substrates of almost any size by chemical vapour deposition methods. One of these applications of a-Si:H is the fabrication of thin-film transistors (TFTs) that are most often used in liquid crystal displays (LCDs). Plasma enhanced chemical vapour deposition (PECVD) is also called glow discharge deposition because of its visible luminosity of the plasma glow region, which is mainly the result of the de-excitation of emitting molecular and atomic species contained in the plasma. The field can be direct current (DC), radio frequency (RF), very high frequency (VHF), and microwave frequency. Deposition of a-Si:H employing the VHF-PECVD technique (typical frequency range 20-110 MHz) has been reported to yield an increase in deposition rate by one order of magnitude with respect to the conventional used frequency of 13.56 MHz, without adversely affecting material quality. The various electrical and optical properties of the VHF films were investigated as a function of main factors involved in the a-Si:H, SiNx, and n+ µc-Si layers deposition processes. The effects of the total pressure, the gases flow ratio, and the influence of VHF power have been intensively investigated to gain device-quality materials. Finally, a number of fabrication techniques and electrical testing were employed in order to realise high-performance thin film transistors with the optimised materials.
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CALDIROLA, STEFANO. « Characterization of a supersonic plasma source for nanostructured thin films deposition ». Doctoral thesis, Università degli Studi di Milano-Bicocca, 2015. http://hdl.handle.net/10281/94564.

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The controlled growth of nanostructured thin films represents a challenging field of research which is related to many different applications of great scientific relevance. The properties of many materials can be greatly enhanced by optimizing the nanoscale assembly processes: by modelling the nanoparticles which create and assemble a film it is possible to achieve very promising results, although it requires a bottom-up approach capable of tailoring the properties with a high level of control or a complex set-up. Plasma-based synthesis processes have been widely developed and applied for an increasing number of technologies leading to important achievements and many industrial-scale applications, in particular in the field of nanoscience. Plasma Assisted Supersonic Jet Deposition offers a novel approach for nanostructured thin films deposition by combining a reactive plasma with a supersonic jet. An argon-oxygen inductively coupled plasma offers a reactive environment where a metalorganic precursor (titanium isopropoxide for TiO2 depositions) is dissociated and oxidized. The gas is then left to expand from a small orifice into a lower pressure vacuum vessel forming a supersonic jet, where the TiO2 nanoparticles are accelerated onto a substrate by the gas carrier mixture. This deposition technique has proven useful for the deposition of nanostructured thin film having a desired morphology at competitive deposition rates. In order to achieve an effective improvement of the synthesis process, an accurate knowledge of the expanding plasma jet chemistry and physics is of fundamental importance. In this PhD project a deep characterization of the supersonic plasma jet was performed using different diagnostics. The plasma discharge in the reactor was monitored by optical emission spectroscopy, Langmuir probes and the measurement of voltage and current across the antenna of the ICP source. The supersonic plasma jet was characterized using a quadrupole mass spectrometer to sample the gas from the jet at different positions along its axis of symmetry. The detection of neutral species, radicals, ion fluxes and their energy distribution functions led to an understanding of the expanding plasma properties, its composition and its influence on thin films deposition. In addition to this, based on experimental observations, a MATLAB code was developed to reproduce the ion energy distribution functions numerically from first principle calculations. During this project plasma assisted supersonic jet deposition was also operated for the deposition of nanostructured TiO2 samples whose chemical, physical and morphological properties were analysed by FTIR, profilometry, ellipsometry, AFM and SEM.
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Kroely, Laurent. « Process and material challenges in the high rate deposition of microcrystalline silicon thin films and solar cells by Matrix Distributed Electron Cyclotron Resonance plasma ». Phd thesis, Ecole Polytechnique X, 2010. http://pastel.archives-ouvertes.fr/pastel-00550241.

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High deposition rates on large areas are industrial needs for mass production of microcrystalline silicon (μc-Si:H) solar cells. This doctoral work aims at exploring the usefulness of Matrix Distributed Electron Cyclotron Resonance (MDECR) plasmas to process the intrinsic layer of μc-Si:H p-i-n solar cells at high rates. With the high dissociation of silane achieved in MDECR plasmas, deposition rates as high as 6nm/s and 2.8nm/s have been demonstrated in our lab for amorphous and microcrystalline silicon respectively, without hydrogen dilution. This technique is also promising because it can be easily scaled up on large areas, just by extending the matrix of elementary microwave applicators. This subject was a unique opportunity to cover the whole chain of this field of research : A new MDECR reactor has been specially designed and assembled during this project. Its maintenance and its improvement have been important technical challenges : for example, the addition of a load-lock enabled us to lower the oxygen concentration in our films by a factor of 10. The impact of the deposition parameters (e.g. the ion energy, the substrate temperature, different gas mixtures, the microwave power) has been explored in extensive parametric studies in order to optimize the material quality. Great efforts have been invested in the characterization of the films. Our strategy has been to develop a wide range of diagnostics (ellipsometry, Raman spectroscopy, SIMS, FTIR, XRD, electrical characterizations etc.). Finally, p-i-n cells have been processed with the selected interesting materials. The successive successful improvements in the material quality (e.g. diffusion lengths of holes parallel to the substrate as high as 250 nm) did unfortunately not result in high efficiency solar cells. Their limited performance is in particular due to a very poor response in the red part of the spectrum resulting in low current densities. Consequently, the potential sources of limitation of the reactor, the material and the device have been studied : e.g. the presence of “cracks” prone to post-oxidation in the highly crystallized materials and the risk of deterioration of the ZnO substrate or of the p-doped layer by a too high process temperature or by hydrogen diffusing from the plasma.
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Xiao, Zhigang. « Synthesis of Functional Multilayer Coatings by Plasma Enhanced Chemical Vapor Deposition ». Cincinnati, Ohio : University of Cincinnati, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1081456822.

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Lau, Kenneth Ka Shun 1972. « Chemical vapor deposition of fluorocarbon films for low dielectric constant thin film applications ». Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/16748.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2000.
Includes bibliographical references.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Pulsed plasma enhanced and hot filament chemical vapor deposition have produced fluorocarbon films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Solid-state nuclear magnetic resonance spectroscopy was demonstrated as a valuable film characterization tool to understand structure-property processing fundamentals, quantifying film bonding environments and tracing structural instabilities. Thermal lability in fluorocarbon films was attributed to terminal end groups and low molecular weight molecules. High temperature thermal stability was achieved by minimizing such labile sources through a clean deposition of high molecular weight chains of poly(tetrafluoroethylene). Poly(tetrafluoroethylene) film porosity was introduced and controlled through the competition between nucleation and growth of film. Porous poly(tetrafluoroethylene) films were further integrated into a bridge layer and air gap dielectric interconnect scheme. With fluorocarbon materials deposited through such chemical vapor deposition methods, dielectric constants ranging from 2.1 to below 1.5 were conceivably attainable, thus potentially satisfying dielectric interconnect requirements to beyond the 0.1 [mu]m technology node.
by Kenneth Ka Shun Lau.
Ph.D.
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Kim, Gwang-Soo 1975. « Multiscale modeling of thin film deposition processes ». Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/29277.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2002.
Includes bibliographical references.
Ionized physical vapor deposition (IPVD) and electrochemical deposition (ECD) are two major thin film deposition processes in the microelectronics industry. The ion fluxes with high kinetic energies in IPVD process involve complex surface interactions that affect overall topology of the microscale features. Copper ECD process involves complex surface reactions and transport phenomena that ranges over different length scales. In this work, predictive simulation tools for these two processes have been developed by investigating the surface reaction and the transport phenomena in IPVD and ECD processes. In the IPVD process, molecular dynamics (MD) techniques with embedded-atom potentials are used to study the surface reactions for atoms with high impinging energies (30 - 50 eV). The surface reaction rates are combined with ballistic transport and level set methods. The resulting tool demonstrates the effect of the kinetic energy driven surface diffusion on the feature profile evolution. For the ECD process of copper, detailed surface kinetic mechanisms are developed based on the competitive adsorption/desorption model in the presence of three representative additives, poly ethylene glycol (PEG) and bis-(sodium sulfoprophyl) (SPS) and chloride. The proposed kinetic mechanism is capable of describing the synergistic effect of different additives on the copper deposition. Statistically designed experiments were performed with the rotating disk electrode (RDE) apparatus. A hydrodynamic model was developed for RDE and is used to fit the kinetic parameters that are independent of the transport effect.
(cont.) A reactor scale model is developed based on the Galerkin finite element method. The model includes momentum transport, transient mass transport, potential distribution and detailed surface kinetic mechanisms. The experimental film thickness uniformity on the blank wafer with commercial electrochemical deposition cell is compared with the simulation result. The reactor scale model is used to investigate the various effects on the film thickness uniformity including terminal effects and mass transport effects. The analysis shows the qualitative difference between two effects and how they can be eliminated. Also, the reactor scale simulation tool is used to model the pulse plating process. Improved performance of the pulse plating over the constant current operation suggests that the relaxation period is the critical parameter that determines the film thickness uniformity. A computationally efficient feature scale model is developed. Mass transport, potential distribution and detailed surface reactions are included in the model ...
by Gwang-Soo Kim.
Ph.D.
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Garza, Ezra. « Pulsed Laser Deposition of Thin Film Heterostructures ». ScholarWorks@UNO, 2011. http://scholarworks.uno.edu/td/459.

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Thin films of Strontium Ruthenate have been grown on Strontium Titanate and Lanthanum Aluminate (100) substrates by pulsed laser deposition. X-ray diffraction results show that the films grown on the Strontium Titanate are amorphous and polycrystalline on the Lanthanum Aluminate. Resistances versus temperature measurements show that the films exhibit semiconducting characteristics. In addition to the growth of Strontium Ruthenate thin films, multilayer heterostructures of Terfenol-D thin films on polycrystalline Lead Titanate thin films were grown by pulsed laser deposition. By using a novel experimental technique called magnetic field assisted piezoelectric force microscopy it is possible to investigate the magnetoelectric coupling between the electrostrictive Lead Titanate and magnetostrictive Terfenol-D thin film. Upon examination of the produced thin films the phase and amplitude components of the piezoelectric signal experience changes in response to an applied in-plane magnetic field. These changes provide experimental evidence of a magnetoelectric coupling between the Terfenol-D and Lead Titanate layers.
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Rycroft, Ian M. « Electric, magnetic and optical properties of thin films, ultra thin films and multilayers ». Thesis, University of Reading, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318142.

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Chen, Yi. « Organic thin film transistors with mono-crystalline rubrene films by horizontal hot wall deposition ». Thesis, McGill University, 2009. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=66699.

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As promising candidates for future low-cost and flexible display applications, organic thin film transistors (OTFTs) have attracted considerable research interests for the past two decades. Recent advances in organic semiconductor theory and organic film growth/deposition techniques have resulted in OTFTs based on single crystalline organic films with performance approaching or even exceeding the present day's dominant amorphous silicon TFT technology. In this work, efforts have been made to explore suitable methods for the fabrication of thin film transistors based on high mobility organic semiconductors, such as rubrene and pentacene. In the early stage of this work, OTFTs with rubrene single crystals grown by PVT (Physical Vapor Transport) method were fabricated and measured with u-max,eff = 1.07 cm^2/V-s, ION/IOFF ~ 10^5 and VT = 0 V. However, it was noticed that these rubrene films are usually fragile and the adhesion to the substrates is often poor, leading to low reproducibility of functional devices. Hence, direct deposition of organic thin films to the substrates is a necessary measure to solve these problems. In this work, a horizontal hot wall deposition (HHWD) method has been developed to directly deposit high quality rubrene films onto the substrate under low pressure (P ~ 10^-6 torr). The resulted films were continuous with good coverage, however different structural phases from amorphous to near mono-crystalline were present. Through intensive studies on the film morphology and crystallinity of rubrene films deposited under different conditions, it is concluded that various factors can greatly affect the organic thin film growth, including surface treatment conditions, substrate orientations, source evaporation temperatures as well as substrate temperatures. Under the optimal deposition conditions, rubrene films are mono-crystalline with planar structure and grain sizes as large as 0.1 x 2
En raison de leur potentiel de pouvoir contribuer à la diminution des coûts dans la fabrication des écrans plats flexibles, les transistors à couche mince organiques (OTFTs) ont attiré énormément d'intérêts dans les dernières décennies.Les avances récentes dans les théories sur les semiconducteurs organiques ainsi que celles sur les techniques de déposition et de croissance ont résulté au développement des OTFTs basés sur des couches organiques monocrystallines avec des performances approchant et même excédant celles dérivées des techniques de fabrication de TFTs de silicium amorphe qui sont couramment dominantes en industrie. Dans cette étude, des efforts ont étés mis pour explorer des méthodes convenables à la fabrication des transistors couches minces basés sur des semiconducteurs organiques à mobilité élevée comme le rubrène et le pentacène.Dans les premières étapes de cette étude, des OTFTs avec du rubrène monocrystalline dont la croissance a été atteinte par la méthode PVT ont été fabriqués et mesurés avec une max,eff = 1.07 cm^2/V-s, un ION/IOFF ~ 10^5 et un VT = 0 V. Il est à noter que ces couches de rubrène sont typiquement fragiles et l'adhésion aux substrats était souvent faible ce qui résultait en une reproductibilité réduite de dispositifs opérationnels. C'est alors que la déposition directe des couches minces organiques aux substrats devient une mesure nécessaire pour résoudre ces problèmes. Dans cette étude, une méthode de déposition à paroi chaude horizontale (HHWD) a été développée pour la déposition directe sous basse pression (P ~ 10^-6 torr)des couches de rubrène à haute qualité sur des substrats. Les couches résultantes sont continues avec une bonne couverture, tandis que des différentes phases structurelles amorphes et monocrystallines sont présentes. Par des études intensives sur la morphologie des couches et$
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Livres sur le sujet "Thin film depositions"

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A, Hopwood Jeffrey, dir. Ionized physical vapor deposition. San Diego : Academic Press, 2000.

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Jaworek, Anatol. Electrospray technology for thin-film devices deposition. Hauppauge, N.Y : Nova Science, 2010.

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Konuma, Mitsuharu. Film Deposition by Plasma Techniques. Berlin, Heidelberg : Springer Berlin Heidelberg, 1992.

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Ionized-cluster beam deposition and epitaxy. Park Ridge, N.J., U.S.A : Noyes Publications, 1988.

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Konuma, Mitsuharu. Plasma techniques for film deposition. Harrow, U.K : Alpha Science International, 2005.

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1950-, Konuma Mitsuharu, dir. Film deposition by plasma techniques. Berlin : Springer-Verlag, 1992.

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Photochemical vapor deposition. New York : Wiley, 1992.

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Moroșanu, C. E. Thin films by chemical vapour deposition. Amsterdam : Elsevier, 1990.

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Thin-film deposition : Principles and practice. New York : McGraw-Hill, 1995.

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Krishna, Seshan, dir. Handbook of thin-film deposition processes and techniques : Principles, methods, equipment, and applications. Park Ridge, N.J : Noyes Publications, 2000.

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Chapitres de livres sur le sujet "Thin film depositions"

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Sivaram, Srinivasan. « Thin Film Phenomena ». Dans Chemical Vapor Deposition, 8–40. Boston, MA : Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_2.

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El-Kareh, Badih. « Thin Film Deposition ». Dans Fundamentals of Semiconductor Processing Technology, 87–167. Boston, MA : Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-2209-6_3.

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Yates, John T. « Thin Film Deposition ». Dans Experimental Innovations in Surface Science, 309–20. Cham : Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-17668-0_29.

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Campedelli, Roberto, Luca Lamagna, Silvia Nicoli et Andrea Nomellini. « Thin Film Deposition ». Dans Silicon Sensors and Actuators, 75–103. Cham : Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80135-9_3.

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Angus, John C., Alberto Argoitia, Roy Gat, Zhidan Li, Mahendra Sunkara, Long Wang et Yaxin Wang. « Chemical vapour deposition of diamond ». Dans Thin Film Diamond, 1–14. Dordrecht : Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-0725-9_1.

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Robertson, J. « Deposition of diamond-like carbon ». Dans Thin Film Diamond, 107–16. Dordrecht : Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-0725-9_9.

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Mwema, Fredrick Madaraka, Tien-Chien Jen et Lin Zhu. « Methods of Thin Film Deposition ». Dans Thin Film Coatings, 17–76. Boca Raton : CRC Press, 2022. http://dx.doi.org/10.1201/9781003202615-2.

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Jang, Jin. « Poly-Si TFTs by Direct Deposition Methods ». Dans Thin Film Transistors, 799–816. Boston, MA : Springer US, 2004. http://dx.doi.org/10.1007/978-1-4615-0397-2_18.

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Rath, J. K. « Thin-Film Deposition Processes ». Dans Advanced Silicon Materials for Photovoltaic Applications, 235–85. Chichester, UK : John Wiley & Sons, Ltd, 2012. http://dx.doi.org/10.1002/9781118312193.ch7.

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Nazabal, Virginie, et Petr Němec. « Amorphous Thin Film Deposition ». Dans Springer Handbook of Glass, 1293–332. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-93728-1_37.

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Actes de conférences sur le sujet "Thin film depositions"

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Yang, Yu, De Z. Shen, Jiying Zhang, Xiaowei Zhao, Yuxue Liu, D. X. Zhao et Xiwu Fan. « Photoluminescence properties of ultrathin CdSe layer depositions in ZnSe matrix ». Dans 4th International Conference on Thin Film Physics and Applications, sous la direction de Junhao Chu, Pulin Liu et Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408453.

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CARP, Mihaela, Violeta DEDIU, Florian PISTRITU, Edwin A. LASZLO et Ciprian ILIESCU. « Effective control of TEOS–PECVD thin film depositions ». Dans 2020 International Semiconductor Conference (CAS). IEEE, 2020. http://dx.doi.org/10.1109/cas50358.2020.9268003.

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Xu, Zhigang, Corydon Hilton, Bobby Watkins, Sergey Yarmolenko et Jag Sankar. « Thin YSZ Electrolyte Film Depositions on Dense and Porous Substrates ». Dans ASME 2003 International Mechanical Engineering Congress and Exposition. ASMEDC, 2003. http://dx.doi.org/10.1115/imece2003-43330.

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Yttria stabilized zirconia (YSZ) thin films have been processed on polished silicon and porous strontium-doped lanthanum manganite (LSM) substrates by liquid fuel combustion chemical vapor deposition from combustion of an aerosol jet. The aerosol jet consists of Y- and Zr- containing metalorganics dissolved in toluene and high-purity oxygen. The morphology and thickness of the deposited films have been analyzed with scanning electron microscope. On the polished silicon substrates, thin and uniform films have been obtained. The grain growth rate is of the first order of the deposition time. The film growth rate was greatly enhanced by utilizing higher precursor concentrations, proper substrate temperature and the effect of thermophoresis. However, when the porous substrate is being coated, a more complex deposition process takes place. The initial deposition seems to be favored on the surface protrusions. Therefore, the covered areas serve as nucleation sites and the grains start to grow, giving rise to larger particles and rougher surface than the films on polished silicon. To enhance the pore-sealing rate, some pre-treatments and post-treatment have been used. Moreover, deposition parameters towards fast pore sealing have been investigated. Thin and continuous films with the film thickness less than 3 μm have been obtained.
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Giambra, Dominic J., et Wyatt E. Tenhaeff. « Kinetic Study of Polystyrene Thin Film Depositions by Cationic Chemical Vapor Deposition ». Dans Optical Interference Coatings. Washington, D.C. : OSA, 2019. http://dx.doi.org/10.1364/oic.2019.md.8.

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Jones, J. G., R. R. Biggers, J. D. Busbee, D. V. Dempsey et G. Kozlowski. « Image processing plume fluence for superconducting thin-film depositions ». Dans Proceedings of the Second International Conference on Intelligent Processing and Manufacturing of Materials. IPMM'99 (Cat. No.99EX296). IEEE, 1999. http://dx.doi.org/10.1109/ipmm.1999.791562.

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Jones, J. G., et P. D. Jero. « Modeling gas by-products from MO-CVD thin-film depositions ». Dans Proceedings of the Second International Conference on Intelligent Processing and Manufacturing of Materials. IPMM'99 (Cat. No.99EX296). IEEE, 1999. http://dx.doi.org/10.1109/ipmm.1999.791552.

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Uchiyama, K., D. Fukunaga, T. Fujii et T. Shiosaki. « High quality oxide thin film depositions using a sol-gel method ». Dans 2008 17th IEEE International Symposium on the Applications of Ferroelectrics (ISAF). IEEE, 2008. http://dx.doi.org/10.1109/isaf.2008.4693864.

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Heuer, J. P., J. P. Eblen, R. L. Hall et W. J. Gunning. « Scale-up Considerations for Codeposited Gradient Index Optical Thin Film Filters ». Dans Optical Interference Coatings. Washington, D.C. : Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oic.1992.otub4.

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Refractive index tailoring by codeposition requires addressing issues that are not present, or at least subtle, in the case of sequential layer depositions. The two issues addressed in this work are the elimination of rate sensor crosstalk and reduction of the effects of refractive index modulation due to planetary rotation.
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Takeda, Yasuhiko, Tadashi Ichikawa, Tomoyoshi Motohiro et Hiroshi Ito. « Thin film retardation plates fabricated by oblique depositions and their applications to LiNbO3-based sensors ». Dans Optical Engineering for Sensing and Nanotechnology (ICOSN '99), sous la direction de Ichirou Yamaguchi. SPIE, 1999. http://dx.doi.org/10.1117/12.347709.

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Suzuki, Yoshiyuki, Hayato Kazama, Nobuhiro Terasawa, Yoshimi Naito, Tetsuzo Yoshimura, Yukihiko Arai et Kunihiko Asama. « Selective growth of conjugated polymer thin film with nanoscale controlling by chemical vapor depositions (CVD) toward 'Nanonics' ». Dans Optics & Photonics 2005, sous la direction de Elizabeth A. Dobisz et Louay A. Eldada. SPIE, 2005. http://dx.doi.org/10.1117/12.614795.

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Rapports d'organisations sur le sujet "Thin film depositions"

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Shanks, H. R. DoD-URIP Thin Film Deposition Equipment. Fort Belvoir, VA : Defense Technical Information Center, juin 1986. http://dx.doi.org/10.21236/ada223421.

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Wu, Genfa. Energetic Deposition of Niobium Thin Film in Vacuum. Office of Scientific and Technical Information (OSTI), janvier 2001. http://dx.doi.org/10.2172/915443.

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Collins, W. E., et B. Rambabu. Experimental thin film deposition and surface analysis techniques. Office of Scientific and Technical Information (OSTI), janvier 1986. http://dx.doi.org/10.2172/5705694.

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BREILAND, WILLIAM G. Reflectance-Correcting Pyrometry in Thin Film Deposition Applications. Office of Scientific and Technical Information (OSTI), juin 2003. http://dx.doi.org/10.2172/820889.

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Benziger, Jay B. Surface Intermediates in Thin Film Deposition on Silicon. Fort Belvoir, VA : Defense Technical Information Center, août 1989. http://dx.doi.org/10.21236/ada216662.

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Lush, Gregory D. Equipment for a Thin-Film Deposition and Characterization Laboratory. Fort Belvoir, VA : Defense Technical Information Center, avril 2000. http://dx.doi.org/10.21236/ada377263.

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Genin, F., B. Stuart, W. McLean et L. Chase. Sub-picosecond laser deposition of thin films. Office of Scientific and Technical Information (OSTI), novembre 2000. http://dx.doi.org/10.2172/15005121.

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Headrick, Randall. Fundamental Mechanisms of Roughening and Smoothing During Thin Film Deposition. Office of Scientific and Technical Information (OSTI), mars 2016. http://dx.doi.org/10.2172/1242492.

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Trolier-McKinstry, Susan, et Thomas R. Shrout. Crystal Growth and Thin Film Deposition of High Performance Piezoelectrics. Fort Belvoir, VA : Defense Technical Information Center, janvier 2001. http://dx.doi.org/10.21236/ada428818.

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Fernandez, Felix E. Pulsed Laser Deposition of Thin Film Material for Nonlinear Waveguides. Fort Belvoir, VA : Defense Technical Information Center, octobre 1994. http://dx.doi.org/10.21236/ada290789.

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