Bibliographies thématiques / TCAD ANALYSIS

Littérature scientifique sur le sujet « TCAD ANALYSIS »

Auteur : Grafiati
Publié le 11 septembre 2023
Mis à jour le 9 février 2024

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Articles de revues sur le sujet "TCAD ANALYSIS"

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Wang, Ke, Haodong Jiang, Yiming Liao, Yue Xu, Feng Yan et Xiaoli Ji. « Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach ». Electronics 11, no 21 (2 novembre 2022) : 3582. http://dx.doi.org/10.3390/electronics11213582.

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In this paper, a novel approach that combines technology computer-aided design (TCAD) simulation and machine learning (ML) techniques is demonstrated to assist the analysis of the performance degradation of GaN HEMTs under hot-electron stress. TCAD is used to simulate the statistical effect of hot-electron-induced, electrically active defects on device performance, while the artificial neural network (ANN) algorithm is tested for reproducing the simulation results. The results show that the ML-TCAD approach can not only rapidly obtain the performance degradation of GaN HEMTs, but can accurately predict the progressive failure under the work conditions with a mean squared error (MSE) of 0.2, informing the possibility of quantitative failure data analysis and rapid defect extraction via the ML-TCAD approach.
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Pan, Zijin, Cheng Li, Mengfu Di, Feilong Zhang et Albert Wang. « 3D TCAD Analysis Enabling ESD Layout Design Optimization ». IEEE Journal of the Electron Devices Society 8 (2020) : 1289–96. http://dx.doi.org/10.1109/jeds.2020.3027034.

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Gupta, Vaibhav. « Performance Analysis of TFET and VDSTFET for Low Power Application using the Work Function Engineering ». International Journal for Research in Applied Science and Engineering Technology 9, no VI (25 juin 2021) : 2722–27. http://dx.doi.org/10.22214/ijraset.2021.35534.

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We report a design of TFET which is quite different from conventional TFET. The structure of VTFET is similar to MOSFET but the conducting mechanism is completely different. Vertical TFET is designed perpendicular to the horizontal plane. The switching and carrier transportation mechanism of VTFET is based on the mechanism of the band to band tunneling through a potential barrier and vertical TFET is based on tunneling perpendicular to the device rather than a mechanism like thermionic emission unlike in MOSFET. We have designed a model for the two-dimension structure of V-TFET which consists of the dual-source and single drain. The channel among the drain and gate region is extraordinarily thin. We have plotted the transfer characteristics of V-TFET according to device parameters using TCAD. The comparison of VTFET with DSVTFET is done by using Silvaco TCAD and the effect of source doping, and work function on transfer characteristics of the device is examined by using silvaco TCAD simulations. The proposed device produces a low-off current.
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Kim, Won-Young, Gee Young Suh, Jin Won Huh, Sung-Han Kim, Min-ju Kim, Yun Seong Kim, Hye-Ryoun Kim et al. « Triple-Combination Antiviral Drug for Pandemic H1N1 Influenza Virus Infection in Critically Ill Patients on Mechanical Ventilation ». Antimicrobial Agents and Chemotherapy 55, no 12 (3 octobre 2011) : 5703–9. http://dx.doi.org/10.1128/aac.05529-11.

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ABSTRACTA recentin vitrostudy showed that the three compounds of antiviral drugs with different mechanisms of action (amantadine, ribavirin, and oseltamivir) could result in synergistic antiviral activity against influenza virus. However, no clinical studies have evaluated the efficacy and safety of combination antiviral therapy in patients with severe influenza illness. A total of 245 adult patients who were critically ill with confirmed pandemic influenza A/H1N1 2009 (pH1N1) virus infection and were admitted to one of the intensive care units of 28 hospitals in Korea were reviewed. Patients who required ventilator support and received either triple-combination antiviral drug (TCAD) therapy or oseltamivir monotherapy were analyzed. A total of 127 patients were included in our analysis. Among them, 24 patients received TCAD therapy, and 103 patients received oseltamivir monotherapy. The 14-day mortality was 17% in the TCAD group and 35% in the oseltamivir group (P= 0.08), and the 90-day mortality was 46% in the TCAD group and 59% in the oseltamivir group (P= 0.23). None of the toxicities attributable to antiviral drugs occurred in either group of our study, including hemolytic anemia and hepatic toxicities related to the use of ribavirin. Logistic regression analysis indicated that the odds ratio for the association of TCAD with 90-day mortality was 0.58 (95% confidence interval, 0.24 to 1.42;P= 0.24). Although this study was retrospective and did not provide virologic outcomes, our results suggest that the treatment outcome of the triple combination of amantadine, ribavirin, and oseltamivir was comparable to that of oseltamivir monotherapy.
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Passeri, D., M. Baroncini, P. Ciampolini, G. M. Bilei, A. Santocchia, B. Checcucci et E. Fiandrini. « TCAD-based analysis of radiation-hardness in silicon detectors ». IEEE Transactions on Nuclear Science 45, no 3 (juin 1998) : 602–8. http://dx.doi.org/10.1109/23.682456.

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Scheinemann, Artur, et Andreas Schenk. « TCAD-based DLTS simulation for analysis of extended defects ». physica status solidi (a) 211, no 1 (janvier 2014) : 136–42. http://dx.doi.org/10.1002/pssa.201300233.

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Li, Fuxing, Changchun Chai, Yuqian Liu, Yanxing Song, Lei Wang et Yintang Yang. « Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment ». Micromachines 14, no 3 (4 mars 2023) : 600. http://dx.doi.org/10.3390/mi14030600.

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The anti-ESD characteristic of the electronic system is paid more and more attention. Moreover, the on-chip electrostatic discharge (ESD) is necessary for integrated circuits to prevent ESD failures. In this paper, the mixed TCAD model of the ESD protection circuit is built and simulated, and the negative transmission line pulse (TLP) injection damage experiment is carried out on the CD4069UBC chip. The circuit model consists of three-dimensional shallow trench isolation (STI) diode TCAD models and a three-dimensional multi-gate Complementary Metal-Oxide-Semiconductor (CMOS) inverter TCAD model. Moreover, the TCAD modeling is based on a 0.25 μm technology node. Through the transient simulation of the electrothermal coupling, the electrical signal of the input and output nodes of the circuit and the distribution of the electrothermal parameters in the device are obtained. Moreover, by analyzing the simulation results, the physical phenomena and the mechanisms of interference and damage mechanism during TLP injection are explained. The location and type of diode damage in the TLP injection simulation results of the circuit model are consistent with the TLP experiment damage results. The proposed ESD protection circuit model and analysis method are beneficial to ESD robustness prediction and ESD soft damage analysis of IC.
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Hajj, Ibrahim N. « Extended Nodal Analysis ». IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 31, no 1 (janvier 2012) : 89–100. http://dx.doi.org/10.1109/tcad.2011.2167330.

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Jongyoon Jung et Taewhan Kim. « Variation-Aware False Path Analysis Based on Statistical Dynamic Timing Analysis ». IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 31, no 11 (novembre 2012) : 1684–97. http://dx.doi.org/10.1109/tcad.2012.2202392.

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Vytyaz, Igor, David C. Lee, Pavan Kumar Hanumolu, Un-Ku Moon et Kartikeya Mayaram. « Sensitivity Analysis for Oscillators ». IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 27, no 9 (septembre 2008) : 1521–34. http://dx.doi.org/10.1109/tcad.2008.927731.

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Thèses sur le sujet "TCAD ANALYSIS"

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Bäcker, Alexandra. « A TCAD analysis of long-wavelength vertical-cavity surface-emitting lasers ». Konstanz Hartung-Gorre, 2009. http://d-nb.info/995591296/04.

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Brunton, Jason A. « TCAD analysis of heating and maximum current density in carbon nanofiber interconnects ». Thesis, Monterey, California. Naval Postgraduate School, 2011. http://hdl.handle.net/10945/5495.

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As devices shrink, the current density through interconnects increases proportionally making new materials a necessity for industry growth. Carbon nanofiber (CNF) and carbon nanotube's (CNT) potential for high current density make them a possible replacement for metal contacts. Learning the limitations of CNFs and CNTs is important if they are to be used in next-generation electronics. As current density increases, heat is generated throughout the CNF structure. This heating eventually leads to breakdown as the temperature reaches the bonding energy of the Carbon-Carbon (C-C) bond, the bond between two carbon atoms. The resultant reaction is the vaporization of the carbon, eliminating electromigration problems common with metal interconnects. The physics of breakdown of CNFs is poorly understood. The CNF interconnects' heating under a voltage sweep between two electrodes is modeled in this thesis. A working model was created with Silvaco ATLAS using experimental data provided by Santa Clara University (SCU). An analytical solution was found for the heat generation occurring within the device. The simulation does not show the breakdown occurring; instead, it accurately predicts the temperature and electrical characteristics of the device. This model will aid in the analysis of CNFs' reliability and potential future integration into the next generation electronics.
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Mazzoli, Andrea. « TCAD analysis of hot-carrier-stress degradation in p-channel LDMOS power devices ». Master's thesis, Alma Mater Studiorum - Università di Bologna, 2021.

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Nowadays, there is an increasing need to develop, reliable and low-cost power devices able to withstand high voltage drops and currents during the off-state and on-state operation, respectively. A useful strategy is represented by the integration on-chip of power devices with CMOS logic and analog technologies. This kind of solution is named BCD (BIPOLAR-CMOS-DMOS) technology. One of the fundamental power device on which the BCD technology is based is the LDMOS (Laterally-Diffused Metal-Oxide Semiconductor) transistor. The study and understanding of the degradation mechanisms affecting their long-term reliability is of great interest because of the stringent requirements in terms of safety, robustness, etc., basing on the field of application of the circuit in which the devices are integrated. This work, in collaboration with STMicroelectronics, focuses on the optimization of the p-channel LDMOS transistors and aims at studying and understanding how the Hot Carrier Stress (HCS) degradation impacts their performance for long working times. The behavior of the device is simulated through the Sentaurus TCAD where a HCS degradation model is employed to understand which are the dominant effects of the hot particles within the semiconductor, applying stress conditions aimed at accelerating the degradation mechanisms causing the drift of key parameters. In this work the focus is on the on-resistance, since it results to be the main parameter affected by degradation. The goal is to understand exactly which is the main cause of such variation in order to be able to allow a technology improvement. The simulations have been calibrated against experimental data. The on-resistance curve are correctly calibrated under certain stress conditions. The goal of the thesis activity has been achieved with accurate results, bringing to a more detailed description of a p-channel LDMOS power device through the development of a first version of the predictive simulation tool.
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Couso, Fontanillo Carlos. « Analysis of impact of nanoscale defects on variability in mos structures ». Doctoral thesis, Universitat Autònoma de Barcelona, 2018. http://hdl.handle.net/10803/650408.

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En los últimos años, la información y su análisis se han convertido en la piedra angular del crecimiento de nuestra sociedad, permitiendo la economía compartida, la globalización de productos y conocimientos, etc. Grandes compañías como Amazon, Facebook, Google... que son conscientes del potencial de estos recursos, están desarrollando infraestructuras con el fin de extraer toda la información posible sobre nuestro entorno (Internet de las cosas) o sobre nosotros mismos (redes sociales, teléfonos inteligentes ...), procesar esta información (Big Data Centers) y transmitirla rápidamente y entre cualquier parte del mundo. Sin embargo, la construcción de esta infraestructura requiere cada vez mejores dispositivos electrónicos, que no pueden desarrollarse utilizando las técnicas de escalado convencionales, porque las dimensiones de los dispositivos han alcanzado el rango atómico. Entre las diferentes fuentes de variabilidad, las trampas de interfaz (IT), las distribuciones de dopantes aleatorios (RDD) y la rugosidad de borde de línea (LER) se han identificado como las más destacadas. En consecuencia, la comunidad científica está explorando nuevas soluciones mediante sofisticadas técnicas experimentales o software de simulación, con el fin de superar los problemas de escalado. En este contexto, esta tesis estructurada en 7 capítulos, intentará contribuir a resolver este problema, analizando el impacto de las trampas de la interfaz y los defectos en la variabilidad de dispositivos. Para presentar al lector los conceptos fundamentales aplicados en esta tesis, en el capítulo 1 se explica la teoría del transporte de carga a través de una unión Schottky y el transistor de efecto de campo semiconductor de metal-óxido (MOSFET). Además, también se presentan el concepto de variabilidad y diferentes fuentes de variabilidad. En el segundo capítulo, se describen en detalle las técnicas de caracterización avanzada, como la microscopía de fuerza atómica conductiva (CAFM) para obtener información a nanoescala. Después de eso, se explica el simulador TCAD de dispositivos ATLAS y sus limitaciones, el cual es usado en esta tesis. El tercer capítulo está dedicado a describir el impacto de los defectos (threading dislocations) en la conducción a través de un contacto Schottky. Aquí, diferentes mecanismos de conducción que están asociados a la conducción a través de áreas con TD y sin TD son analizados demostrando que el área con alta densidad de TD muestra mayor corriente de fuga. En el capítulo cuatro, las técnicas de caracterización explicadas en el capítulo 2 se utilizan para obtener información a nanoescala. Para introducir esta información al simulador TCAD, se desarrollaron dos herramientas de software que son explicadas. Finalmente, la variabilidad de dispositivos MOSFET se estudia teniendo en cuenta los datos experimentales a nanoescala. En el capítulo cinco, se analiza la influencia de las trampas de interfaz en la variabilidad del dispositivo. En primer lugar, se estudia el impacto de las cargas fijas discretas de la interfaz en dispositivos MOSFET de tecnología de 65 nm con diferentes dimensiones (variabilidad tiempo-cero), donde una desviación de la ley de Pelgrom se prueba mediante datos experimentales y de simulación TCAD. A continuación, el comportamiento dinámico de las trampas se analiza mediante las simulaciones transitorias TCAD, con el fin de estimar sus parámetros físicos de trampas a partir de parámetros empíricos. El último capítulo de resultados está dedicado a estudiar el compromiso entre el rendimiento y el consumo de potencia en (Silicon On Insulator) SOI MOSFET cuando se opera en un voltaje cercano al umbral. Además, también se analiza el impacto de las trampas de interfaz en el rendimiento y el consumo de potencia del dispositivo. Finalmente, en el último capítulo, se destacan las conclusiones más relevantes de esta tesis.
Over the last years, the information and its analysis have become in the corner stone of growth of our society allowing the sharing economy, globalization of products and knowledge, block-chain technology etc. Huge companies such as: Amazon, Facebook, Google... which were aware of the potential of these resources, are developing vast infrastructures in order to extract as much information as possible about our environment (Internet of Things) or ourselves (social media, smart-phones...), process this information (Big Data Centers) and transmit it quickly all over the world. However, this challenge requires electronic devices with higher performance and low power consumption, which cannot be developed using the conventional scaling techniques because the dimensions of devices have reached the atomic range. In this range of dimensions, the impact of the discrete of matter and charge increases inevitably the variability of devices. Among different variability sources, Interface traps (IT), Random Dopant Distributions (RDD), Line Edge Roughness (LER) and Poly Gate Granularity (PGG) have been identified as the most prominent ones. Consequently, the scientific community is exploring new solutions such as, alternative device materials and/or structures, in order to overcome the different issues owing to the scaling. In this context, this thesis, which is structure in 7 chapters, will try to contribute to solve this problem, analyzing the impact of interface traps and defects on device variability. In order to introduce to the reader, in chapter 1 the charge transport theory through a semiconductor and metal junction (Schottky contact) and the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) device are explained. Besides, the concept of variability and different sources of variability are also presented. In the second chapter, advanced characterization techniques, such as, Conductive Atomic Force Microscopy (CAFM) and Kelvin Prove Force Microscopy (KPFM) used to obtain nanoscale information are described in detail. After that, the TCAD device simulator called ATLAS is explained. Here, the models and their limitations to simulate the electronic devices are discussed. Third chapter is devoted to describe the impact of threading dislocation (TD) defects on the conduction through a schottky contact formed by a III-V semiconductor material (InGaAs) and a metal. Here, different conduction mechanisms, Poole Frenkel (PF) and Thermionic Emission (TE), have been associated to the conduction through areas with TD and without TD, respectively, proving that III-V materials with high density of TD showing higher leakage current. In chapter four, the development of a simulator called (NAnoscale MAp Simulator (NAMAS)) to generate automatically topography and density charge maps from inputs obtained from CAFM measurements (topography and current maps) of a given sample is explained. From the generated maps, the impact of the oxide thickness and the charge density fluctuations on MOSFET variability is studied. In chapter five, the impact of interface traps in the gate oxide on device variability is analyzed. Firstly, the impact of interface discrete fixed charges on 65 nm technology MOSFET devices with different dimensions is studied (time-zero variability), where a deviation of Pelgrom's law is proved by experimental and TCAD simulation data. Next, the dynamic behavior of traps is analyzed by TCAD transient simulation in order to estimate their physical parameters of traps from empiric parameters. Chapter six is devoted to study the performance and power consumption trade-off in Ultra-thin Body and Buried Oxide Fully Depleted Silicon on Insulator (UTBB FDSOI) MOSFET when it is operated in near-threshold voltage. Besides, the impact of traps in gate oxide / channel and in buried oxide / channel interfaces on the performance and power consumption of device is also analyzed. Finally, the more relevant conclusions are highlighted.
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Ramirez-garcia, Eloy. « Analyse expérimentale et modélisation du bruit haute fréquence des transistors bipolaires à hétérojonctions SiGe et InGaAs/InP pour les applications très hautes fréquences ». Thesis, Paris 11, 2011. http://www.theses.fr/2011PA112082/document.

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Le développement des technologies de communication et de l’information nécessite des composants semi-conducteurs ultrarapides et à faible niveau de bruit. Les transistors bipolaires à hétérojonction (TBH) sont des dispositifs qui visent des applications à hautes fréquences et qui peuvent satisfaire ces conditions. L’objet de cette thèse est l’étude expérimentale et la modélisation du bruit haute fréquence des TBH Si/SiGe:C (technologie STMicroelectronics) et InP/InGaAs (III-V Lab Alcatel-Thales).Accompagné d’un état de l’art des performances dynamiques des différentes technologies de TBH, le chapitre I rappelle brièvement le fonctionnement et la caractérisation des TBH en régime statique et dynamique. La première partie du chapitre II donne la description des deux types de TBH, avec l’analyse des performances dynamiques et statiques en fonction des variations technologiques de ceux-ci (composition de la base du TBH SiGe:C, réduction des dimensions latérales du TBH InGaAs). Avec l’aide d’une modélisation hydrodynamique, la seconde partie montre l’avantage d’une composition en germanium de 15-25% dans la base du TBH SiGe pour atteindre les meilleurs performances dynamiques. Le chapitre III synthétise des analyses statiques et dynamiques réalisées à basse température permettant de déterminer le poids relatif des temps de transit et des temps de charge dans la limitation des performances des TBH. L’analyse expérimentale et la modélisation analytique du bruit haute fréquence des deux types de TBH sont présentées en chapitre IV. La modélisation permet de mettre en évidence l’influence de la défocalisation du courant, de l’auto-échauffement, de la nature de l’hétérojonction base-émetteur sur le bruit haute fréquence. Une estimation des performances en bruit à basse température des deux types de TBH est obtenues avec les modèles électriques
In order to fulfil the roadmap for the development of telecommunication and information technologies (TIC), low noise level and very fast semiconductor devices are required. Heterojunction bipolar transistor has demonstrated excellent high frequency performances and becomes a candidate to address TIC roadmap. This work deals with experimental analysis and high frequency noise modelling of Si/SiGe:C HBT (STMicroelectronics tech.) and InP/InGaAs HBT (III-V Lab Alcatel-Thales).Chapter I introduces the basic concepts of HBTs operation and the characterization at high-frequency. This chapter summarizes the high frequency performances of many state-of-the-art HBT technologies. The first part of chapter II describes the two HBT sets, with paying attention on the impact of the base composition (SiGe:C) or the lateral reduction of the device (InGaAs) on static and dynamic performances. Based on TCAD modelling, the second part shows that a 15-25% germanium composition profile in the base is able to reach highest dynamic performances. Chapter III summarizes the static and dynamic results at low temperature, giving a separation of the intrinsic transit times and charging times involved into the performance limitation. Chapter IV presents noise measurements and the derivation of high frequency noise analytical models. These models highlight the impact of the current crowding and the self-heating effects, and the influence of the base-emitter heterojunction on the high frequency noise. According to these models the high frequency noise performances are estimated at low temperature for both HBT technologies
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El, Boubkari Kamal. « Impact de la modélisation physique bidimensionnelle multicellulaire du composant semi-conducteur de puissance sur l'évaluation de la fiabilité des assemblages appliqués au véhicule propre ». Phd thesis, Université Sciences et Technologies - Bordeaux I, 2013. http://tel.archives-ouvertes.fr/tel-00856596.

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A bord des véhicules électriques (VE) et Hybrides (VEH), les fonctions de tractions sont assurées par des convertisseurs électroniques de puissances. Ces derniers sont constitués de module de puissance (IGBTs ou MOSFETs). Au cours de leur fonctionnement, ces modules sont parfois soumis à de fortes contraintes électriques et thermiques qui amènent à une défaillance ou même à une destruction. Le premier objectif sera de réaliser un banc expérimentale permettant d'étudier le vieillissement des modules IGBTs en régîmes extrêmes de fonctionnement (mode de court-circuit). Ainsi, nous évaluerons les différents indicateurs de vieillissements permettant de prédire la défaillance du composant. Il sera question aussi de suivre le vieillissement ou une dégradation initié sur les composants IGBTs par thermographie infrarouge. Le second objectif sera de modéliser et simuler par éléments finis différentes structures d'IGBTs, afin de valider les modèles en fonctionnement statique et dynamique. L'avantage de l'approche multicellulaire par rapport à l'approche unicellulaire sera mis en avant.
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Baccar, El Boubkari Fedia. « Évaluation des mécanismes de défaillance et de la fiabilité d’une nouvelle terminaison haute tension : approche expérimentale et modélisation associée ». Thesis, Bordeaux, 2015. http://www.theses.fr/2015BORD0266/document.

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Ces travaux s’intègrent dans le projet de recherche SUPERSWITCH dans lequel des solutions alternatives à l’IGBT, utilisées dans les convertisseurs de puissance dans la gamme des tenues en tension 600-1200 V, sont envisagées. Les nouvelles structures du transistor MOS basées sur le principe de Super-Jonction tel que le transistor DT-SJMOSFET et sa terminaison originale, la « Deep Trench Termination » se propose comme alternative aux IGBT. Dans ce contexte, cette thèse se focalise sur la caractérisation de la robustesse de la terminaison DT2 adapté à une diode plane. Après avoir effectué un état de l’art sur les composants de puissances à semi-conducteur unidirectionnels en tension, les terminaisons des composants de puissance et la fiabilité des modules de puissance, un véhicule de test a été conçu en vue de réaliser les différents essais de vieillissement accéléré et suivi électrique. La fiabilité de la terminaison DT2 a été évaluée par des essais expérimentaux et des simulations numériques, dont une méthodologie innovante a été proposée. Au final de nouvelles structures ont été proposées pour limiter les problèmes de délaminage et de charges aux interfaces mis en avant dans notre étude
This work is a part of the research project SUPERSWITCH in which alternatives solutions to the IGBT, are investigated. This solution was used IGBT in power converters in the 600-1200 V breakdown voltage range. The new MOSFET structures based on the super-junction, such as the DT-SJMOSFET and its "Deep Trench Termination", is proposed as an alternative to IGBT. In this context, this thesis focuses on the robustness characterization of the DT2 termination adapted to a planar diode. After a state of the art on unidirectional voltage power components, the power components termination, and power modules reliability, a test vehicle has been designed in order to carry out different accelerated ageing tests and electrical monitoring. The reliability of DT2 termination was evaluated by experimental tests and numerical simulations. An innovative modeling methodology has been proposed. Finally, new structures have been proposed to limit the delamination failure mechanisms and interface charges problems highlighted in this thesis
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Tang, Jun. « Causal models for analysis of TCAS-induced collisions ». Doctoral thesis, Universitat Autònoma de Barcelona, 2015. http://hdl.handle.net/10803/309134.

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Una sèrie de col·lisions aèries que van succeir durant un període d’uns 30 anys (1956-1986) van ser un dels principals motius pels quals l’Administració Federal d’Aviació (FAA) va prendre la decisió de desenvolupar i implementar un sistema de prevenció de col·lisions eficaç que actués com a últim recurs, quan es produís una fallada del servei de separació d’aeronaus per part del controlador de trànsit aeri (ATC). El Sistema d’Alerta de Trànsit i Anticol·lisió (TCAS) va ser desenvolupat per a aquest objectiu a partir d’una anàlisi completa de dades de vol. Com a resultat, la influència de TCAS en la seguretat del vol ha estat eficaç, beneficiosa i significativa en la reducció de la probabilitat de col·lisions. Els projectes Single European Sky ATM Research (SESAR) i Next Generation Air Transportation System (NextGen) pretenen millorar l’eficiència en la gestió del tràfic aeri (ATM) al mateix temps que es pretén reduir l’actual capacitat latent en el costat aire mitjançant la incorporació de noves tecnologies i procediments. En conseqüència, serà necessari investigar l’impacte en seguretat en augmentar la capacitat de l’espai aeri mitjançant una anàlisi exhaustiva i una avaluació efectiva del vol. En aquesta tesi, es proposen diversos models causals de colisions entre aeronaus per millorar el rendiment del TCAS tenint en compte el potencial efecte sobre el trànsit colindant, considerant escenaris futurs amb un nombre elevat de trajectòries. Els diferents models han estat especificats com a sistemes a esdeveniments discrets mitjançant el formalisme de Xarxes de Petri Acolorides. Mitjançant l’anàlisi de l’espai d’estat d’un volum d’espai aeri amb diverses aeronaus, els models desenvolupats avaluen els efectes dels diferents RAs generats pel TCAS sobre el tràfic col·lindant. Els models han estat validats utilitzant InCAS i ofereixen una perspectiva global de les dinàmiques que es generen, i una millor comprensió de les potencials col·lisions induïdes per a una millor valoració del risc de col·lisió. Com a resultat, els escenaris amb tràfic col·lindant que podrien iniciar col·lisions induïdes han estat identificats i caracteritzats. L’anàlisi quantitativa del factor de risc de col·lisions induïdes per TCAS ha estat realitzat per avaluar l’impacte de la demora del pilot per respondre als avisos TCAS durant el vol en escenaris d’alta densitat. Mitjançant l’ús de models estocàstics per representar la resposta del pilot s’han analitzat els diferents estats assolibles amb l’objectiu de generar resolucions cooperatives. En conseqüència, el rendiment de TCAS es podria millorar de forma innovadora sense necessitat d’introduir canvis rellevants en la lògica. Els models causals de col·lisions proposats poden ser utilitzats com a eines auxiliars en l’anàlisi d’escenaris de tràfic dens, i augmentar la capacitat de l’espai aeri, gestionant de manera eficient i segura un major nombre de vols. El present treball contribueix a continuar les investigacions en l’anàlisi de la seguretat dels conceptes ATM actuals i avançats, incloent les futures extensions de TCAS.
Una serie de colisiones en el aire que ocurrieron durante un período de unos 30 años (1956-1986) fueron uno de los principales motivos por los que la Administración Federal de Aviación (FAA) tomó la decisión de desarrollar e implementar un sistema de prevención de colisiones eficaz que actuara como último recurso, cuando se produjese un fallo del servicio de separación de aeronaves por parte del controlador de tránsito aéreo (ATC). El Sistema de Alerta de Tráfico y Anticolisión (TCAS) fue desarrollado para este objetivo a partir de un análisis completo de datos de vuelo. Como resultado La influencia de TCAS en la seguridad del vuelo ha sido eficaz, beneficiosa y significativa en la reducción de la probabilidad de colisiones. Los proyectos Single European Sky ATM Research (SESAR) y Next Generation Air Transportation System (NextGen) pretenden mejorar la eficiencia en la gestión del tráfico aéreo (ATM) al mismo tiempo que se pretende reducir la actual capacidad latente en el lado aire mediante la incorporación de nuevas tecnologías y procedimientos,. En consecuencia, va a ser necesario investigar el impacto en seguridad al aumentar la capacidad del espacio aéreo mediante un análisis exhaustivo y una evaluación efectiva del vuelo. En esta tesis, se proponen varios modelos causales de encuentro entre aeronaves para mejorar el rendimiento del TCAS teniendo en cuenta el potencial efecto sobre el tráfico colindante, considerando escenarios futuros con un número elevado de trayectorias. Los diferentes modelos han sido especificados como sistemas a eventos discretos mediante el formalismo de Redes de Petri Coloreadas. Mediante el análisis del espacio de estado de un volumen de espacio aéreo con varias aeronaves, los modelos desarrollados evalúan los efectos de los distintos RAs generados por TCAS sobre el tráfico colindante. Los modelos han sido validados utilizando InCAS y ofrecen una perspectiva global de las dinámicas que se generan, y una mejor comprensión de las potenciales colisiones inducidas para una mejor valoración del riesgo de colisión. Como resultado, los escenarios con tráfico colindante que podrían iniciar colisiones inducidas han sido identificados y caracterizados. El análisis cuantitativo del factor de riesgo de colisiones inducidas por TCAS ha sido realizado para evaluar el impacto de la demora del piloto para responder a los avisos TCAS durante el vuelo en escenarios de alta densidad. Mediante el uso de modelos estocásticos para representar la respuesta del piloto se han analizado los diferentes estados alcanzables con el objetivo de generar resoluciones cooperativas. En consecuencia, el rendimiento de TCAS se podría mejorar de forma innovadora sin necesidad de introducir cambios relevantes en la lógica. Los modelos de encuentros causales propuestos pueden ser utilizados como herramientas auxiliares en el análisis de escenarios de tráfico denso, y aumentar la capacidad del espacio aéreo, gestionando de manera eficiente y segura un mayor número de vuelos. El presente trabajo contribuye a continuar las investigaciones en el análisis de la seguridad de los conceptos ATM actuales y avanzados, incluyendo las futuras extensiones de TCAS.
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Billingsley, Thomas B. (Thomas Boyd). « Safety analysis of TCAS on Global Hawk using airspace encounter models ». Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/35294.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Aeronautics and Astronautics, 2006.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Includes bibliographical references (p. 66).
The U.S. Air Force's RQ-4 Global Hawk unmanned aerial vehicle (UAV) is a high altitude, long endurance aircraft used for surveillance and reconnaissance. Because of the potential for close proximity to manned aircraft in civil airspace, collision avoidance is a major concern, and the Air Force is seeking to equip Global Hawk with the Traffic Alert and Collision Avoidance System (TCAS) to reduce the probability of mid-air collision. Currently, Global Hawk is equipped with a Mode S transponder and uses chase aircraft, ground observers and/or ground radar contact to comply with the collision avoidance requirement. In order to evaluate TCAS effectiveness, a fast-time simulation tool has been developed at MIT Lincoln Laboratory that computes the mean probability of a near mid-air collision for a large number of close encounters between two aircraft. Airspace encounter models enable sets of encounters to be simulated that are statistically representative of the aircraft encounters that actually occur in the airspace. The TCAS logic is implemented in the simulation tool and the aircraft responses during the encounters, with and without TCAS, are simulated in parallel.
(cont.) By observing measured vertical miss distance at the closest point of approach between the two aircraft, it is possible to quantify the reduction in collision risk provided by TCAS, termed the risk ratio. Global Hawk's flight characteristics differ from a conventional aircraft. Its mission profile through civil airspace includes slow, steep climbs and descents, and shallower turns than a conventional aircraft. Its vertical acceleration and climb rate limits can hinder its response to a TCAS resolution advisory (RA). Communication latency also may occur. For this thesis, encounter models were developed that reflect Global Hawk's flight characteristics. The new encounter models were then implemented in the simulation tool, and millions of encounters between Global Hawk and a conventional aircraft were simulated. These encounters were compared against encounters between two conventional aircraft to observe how Global Hawk's flight characteristics changed the effectiveness of TCAS. Assuming a standard pilot response to TCAS RAs, TCAS provided a significant safety improvement to Global Hawk over a Mode S transponder alone, yielding risk ratios in the range of 0.003 to 0.079.
(cont.) Global Hawk's flight characteristics generally caused a decrease in TCAS effectiveness from the original encounter models. Encounters were also simulated where Global Hawk's response to TCAS RAs was delayed by increasing amounts to simulate communication latency. A delay of approximately 15 seconds was tolerable before TCAS provided less safety than a Mode S transponder alone.
by Thomas B. Billingsley.
S.M.
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Williams, Thomas C. R. « Metabolic Flux Analysis of the TCA Cycle in Arabidopsis ». Thesis, University of Oxford, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.515020.

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Livres sur le sujet "TCAD ANALYSIS"

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Bäcker, Alexandra. A TCAD analysis of long-wavelength vertical-cavity surface-emitting lasers. Konstanz : Hartung-Gorre, 2009.

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G, Rojas R., Burnside Walter Dennis 1942- et United States. National Aeronautics and Space Administration., dir. Modelling and performance analysis of four and eight element TCAS. Columbus, Ohio : Ohio State University, Electroscience Laboratory, 1990.

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Massa, Solekaye, dir. Dictionnaire démé (Tchad) : Precédé de notes grammaticales. Louvain : Peeters, 2006.

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Dictionnaire démé (Tchad) : Précédé de notes grammaticales. Louvain : Peeters, 2006.

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Litvin, F. L. Topology of modified helical gears and tooth contact analysis (TCA) program. Cleveland, Ohio : Lewis Research Center, 1989.

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Litvin, F. L. Topology of modified helical gear and tooth contact analysis (TCA) program. [Washington, DC] : National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Division, 1989.

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Litvin, F. L. Spur gears : Optimal geometry, methods for generation and tooth contact analysis (TCA) program. [Washington, DC] : National Aeronautics and Space Administration, Scientific and Technical Information Division, 1988.

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LaFleur, Lawrence E. NCASI procedures for the preparation and isomer specific analysis of pulp and paper industry samples for 2,3,7,8-TCDD and 2,3,7,8-TCDF. New York, N.Y : National Council of the Paper Industry for Air and Stream Improvement, 1989.

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Environmental Monitoring Systems Laboratory (Research Triangle Park, N.C.), dir. National dioxin study : Analytical procedures and quality assurance plan for the analysis of 2,3,7,8-TCDD in tier 3-7 samples of the U.S. Environmental Protection Agency national dioxin strategy. Research Triangle Park, NC : Environmental Monitoring Systems Laboratory, U.S. Environmental Protection Agency, 1986.

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National Aeronautics and Space Administration (NASA) Staff. Modelling and Performance Analysis of Four and Eight Element Tcas. Independently Published, 2018.

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Chapitres de livres sur le sujet "TCAD ANALYSIS"

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Shigyo, Naoyuki. « Statistical Analysis of VLSI Using TCAD ». Dans Simulation of Semiconductor Processes and Devices 2001, 202–9. Vienna : Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_44.

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Catoggio, E., S. Donati Guerrieri et F. Bonani. « Multibias TCAD Analysis of Trap Dynamics in GaN HEMTs ». Dans Lecture Notes in Electrical Engineering, 102–9. Cham : Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-48711-8_12.

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Khiangte, Lalthanpuii, Kuleen Kumar et Rudra Sankar Dhar. « TCAD Modeling and Analysis of sub-30nm Strained Channel MOSFET ». Dans International Conference on Intelligent Computing and Smart Communication 2019, 1383–88. Singapore : Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0633-8_135.

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Gehring, A., C. Heitzinger, T. Grasser et S. Selberherr. « TCAD Analysis of Gain Cell Retention Time for SRAM Applications ». Dans Simulation of Semiconductor Processes and Devices 2001, 416–19. Vienna : Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_96.

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Biswas, Kalyan, Rachita Ghoshhajra et Angsuman Sarkar. « High Electron Mobility Transistor : Physics-Based TCAD Simulation and Performance Analysis ». Dans HEMT Technology and Applications, 155–79. Singapore : Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_12.

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Kumashiro, S., H. Kawaguchi, K. Imai et H. Matsumoto. « Analysis of the asymmetric breakdown characteristics of trench isolation structure by using TCAD ». Dans Simulation of Semiconductor Processes and Devices 1998, 259–62. Vienna : Springer Vienna, 1998. http://dx.doi.org/10.1007/978-3-7091-6827-1_65.

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Grace, Jessy, Sphoorthy Bhushan, Chinnam S. V. Maruthi Rao et Ameet Chavan. « 16 nm FinFET Based Radiation Hardened Standard Cell Library Analysis Using Visual TCAD Tool ». Dans Advances in Robotics, Automation and Data Analytics, 206–13. Cham : Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-70917-4_20.

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Yadav, Nisha, Sunil Jadav et Gaurav Saini. « Simulation and Analysis of Gate Stack DG MOSFET with Application of High-k Dielectric Using Visual TCAD ». Dans High-k Materials in Multi-Gate FET Devices, 105–30. Boca Raton : CRC Press, 2021. http://dx.doi.org/10.1201/9781003121589-7.

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Malavena, Gerardo. « Modeling of GIDL–Assisted Erase in 3–D NAND Flash Memory Arrays and Its Employment in NOR Flash–Based Spiking Neural Networks ». Dans Special Topics in Information Technology, 43–53. Cham : Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-85918-3_4.

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AbstractSince the very first introduction of three-dimensional (3–D) vertical-channel (VC) NAND Flash memory arrays, gate-induced drain leakage (GIDL) current has been suggested as a solution to increase the string channel potential to trigger the erase operation. Thanks to that erase scheme, the memory array can be built directly on the top of a $$n^+$$ n + plate, without requiring any p-doped region to contact the string channel and therefore allowing to simplify the manufacturing process and increase the array integration density. For those reasons, the understanding of the physical phenomena occurring in the string when GIDL is triggered is important for the proper design of the cell structure and of the voltage waveforms adopted during erase. Even though a detailed comprehension of the GIDL phenomenology can be achieved by means of technology computer-aided design (TCAD) simulations, they are usually time and resource consuming, especially when realistic string structures with many word-lines (WLs) are considered. In this chapter, an analysis of the GIDL-assisted erase in 3–D VC nand memory arrays is presented. First, the evolution of the string potential and GIDL current during erase is investigated by means of TCAD simulations; then, a compact model able to reproduce both the string dynamics and the threshold voltage transients with reduced computational effort is presented. The developed compact model is proven to be a valuable tool for the optimization of the array performance during erase assisted by GIDL. Then, the idea of taking advantage of GIDL for the erase operation is exported to the context of spiking neural networks (SNNs) based on NOR Flash memory arrays, which require operational schemes that allow single-cell selectivity during both cell program and cell erase. To overcome the block erase typical of nor Flash memory arrays based on Fowler-Nordheim tunneling, a new erase scheme that triggers GIDL in the NOR Flash cell and exploits hot-hole injection (HHI) at its drain side to accomplish the erase operation is presented. Using that scheme, spike-timing dependent plasticity (STDP) is implemented in a mainstream NOR Flash array and array learning is successfully demonstrated in a prototype SNN. The achieved results represent an important step for the development of large-scale neuromorphic systems based on mature and reliable memory technologies.
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Srivastava, Ajay Kumar. « Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL ». Dans Si Detectors and Characterization for HEP and Photon Science Experiment, 135–48. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-19531-1_10.

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Actes de conférences sur le sujet "TCAD ANALYSIS"

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Ceric, H., R. L. de Orio, J. Cervenka et S. Selberherr. « TCAD solutions for submicron copper interconnect ». Dans 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IEEE, 2008. http://dx.doi.org/10.1109/ipfa.2008.4588158.

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Cho, Jin, Frank Geelhaar, Uzma Rana, Laks Vanamurthy, Ryan Sporer et Francis Benistant. « TCAD analysis of SiGe channel FinFET devices ». Dans 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2017. http://dx.doi.org/10.23919/sispad.2017.8085338.

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Petrosyants, Konstantin. « INTRODUCTION INTO TCAD AND SPICE MODELING OF SEMICONDUCTOR DEVICES AND IC COMPONENTS. » Dans International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1550.silicon-2020/35-40.

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Conventional BJT, MOSFET, JFET, DMOST, IGBT structures fabricated on bulk silicon and SOI/SOS substrates are characterized as the object of modeling. Popular TCAD simulators and SPICE device models libraries are presented. The model parameters extraction strategies for TCAD device and SPICE circuit simulation based on data proceeding of physical and electrical measurements are described. The typical examples of TCAD and SPICE modeling of BJTs and MOSFETs fabricated by conventional silicon IC technologies are presented.
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Sponton, Luca, Flavio Carbognani, Dipu Pramanik et Wolfgang Fichtner. « TCAD Analysis for VLSI-Application-Oriented Process Optimization ». Dans 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306143.

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Cai, W. Z., B. Gogoi, R. Davies, D. Lutz, D. Rice, G. H. Loechelt et G. Grivna. « TCAD Analysis of a Vertical RF Power Transistor ». Dans 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2009. http://dx.doi.org/10.1109/sispad.2009.5290204.

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Diaz Reigosa, Paula, Francesco Iannuzzo et Munaf Rahimo. « TCAD analysis of short-circuit oscillations in IGBTs ». Dans 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD). IEEE, 2017. http://dx.doi.org/10.23919/ispsd.2017.7988933.

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Lim, Shang Yi, Joydeep Ghosh et Aaron Thean. « Innovative use of TCAD Process Simulation for Device Failure Analysis ». Dans 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2021. http://dx.doi.org/10.1109/ipfa53173.2021.9617254.

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Navarro, Carlos, Santiago Navarro, Carlos Marquez et F. Gamiz. « TCAD Analysis of III-V capacitor-less A2RAM cells ». Dans 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE, 2019. http://dx.doi.org/10.1109/eurosoi-ulis45800.2019.9041874.

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Kuang, Yawei, Yushen Liu, Yulong Ma, Jing Xu, Xifeng Yang et Jinfu Feng. « TCAD analysis of graphene silicon Schottky junction solar cell ». Dans International Symposium on Photonics and Optics, sous la direction de Zhiping Zhou. SPIE, 2015. http://dx.doi.org/10.1117/12.2197678.

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Axelrad, Valery, Victor V. Boksha, Yuri Granik, Ognjen Milic, Juan C. Rey, D. Ward et Eduard I. Tochitsky. « Analysis of microlithography in an open-architecture TCAD system ». Dans SPIE's 1994 Symposium on Microlithography, sous la direction de Timothy A. Brunner. SPIE, 1994. http://dx.doi.org/10.1117/12.175459.

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Rapports d'organisations sur le sujet "TCAD ANALYSIS"

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Yoshimura, A. S. Thermodynamic Cycle Analysis Program (TCAP). Office of Scientific and Technical Information (OSTI), janvier 1997. http://dx.doi.org/10.2172/481552.

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Streso, Katy, et Francesco Lagona. Hidden Markov random field and FRAME modelling for TCA-image analysis. Rostock : Max Planck Institute for Demographic Research, octobre 2005. http://dx.doi.org/10.4054/mpidr-wp-2005-032.

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Figueredo, Luisa, Liliana Martinez et Joao Paulo Almeida. Current role of Endoscopic Endonasal Approach for Craniopharyngiomas. A 10-year Systematic review and Meta-Analysis Comparison with the Open Transcranial Approach. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, janvier 2023. http://dx.doi.org/10.37766/inplasy2023.1.0045.

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Review question / Objective: To identify and review studies published in the last ten years, presenting the efficacy and outcomes of EEA and TCA for patients with cranio-pharyngiomas. Eligibility criteria: Studies meeting the following criteria were included: (a) retrospective and prospective studies and (b) observational studies (i.e., cross-sectional, case-control, case-series). The outcomes included visual outcomes (improvement, no changes, worsening), endocrinological outcomes (permanent diabetes insipidus and hypopituitarism), operatory site infection, meningitis, cerebrospinal fluid leak, stroke, hemorrhage, and mortality. Studies were excluded if they were determined to be: (a) case-report studies, (b) studies testing genetic disorders, (c) poster presentation abstracts without full-text availability, (d) systematic reviews, and (e) metanalyses.
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