Littérature scientifique sur le sujet « Surface Activated Bonding »
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Articles de revues sur le sujet "Surface Activated Bonding"
Takeuchi, Kai, Junsha Wang, Beomjoon Kim, Tadatomo Suga et Eiji Higurashi. « Room temperature bonding of Au assisted by self-assembled monolayer ». Applied Physics Letters 122, no 5 (30 janvier 2023) : 051603. http://dx.doi.org/10.1063/5.0128187.
Texte intégralLomonaco, Quentin, Karine Abadie, Jean-Michel Hartmann, Christophe Morales, Paul Noël, Tanguy Marion, Christophe Lecouvey, Anne-Marie Papon et Frank Fournel. « Soft Surface Activated Bonding of Hydrophobic Silicon Substrates ». ECS Meeting Abstracts MA2023-02, no 33 (22 décembre 2023) : 1601. http://dx.doi.org/10.1149/ma2023-02331601mtgabs.
Texte intégralODA, Tomohiro, Tomoyuki ABE et Isao KUSUNOKI. « Wafer Bonding by Surface Activated Method ». Shinku 49, no 5 (2006) : 310–12. http://dx.doi.org/10.3131/jvsj.49.310.
Texte intégralLomonaco, Quentin, Karine Abadie, Jean-Michel Hartmann, Christophe Morales, Paul Noël, Tanguy Marion, Christophe Lecouvey, Anne-Marie Papon et Frank Fournel. « Soft Surface Activated Bonding of Hydrophobic Silicon Substrates ». ECS Transactions 112, no 3 (29 septembre 2023) : 139–45. http://dx.doi.org/10.1149/11203.0139ecst.
Texte intégralYang, Song, Ningkang Deng, Yongfeng Qu, Kang Wang, Yuan Yuan, Wenbo Hu, Shengli Wu et Hongxing Wang. « Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding ». Materials 15, no 9 (25 avril 2022) : 3115. http://dx.doi.org/10.3390/ma15093115.
Texte intégralYang, Song, Ningkang Deng, Yongfeng Qu, Kang Wang, Yuan Yuan, Wenbo Hu, Shengli Wu et Hongxing Wang. « Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding ». Materials 15, no 9 (25 avril 2022) : 3115. http://dx.doi.org/10.3390/ma15093115.
Texte intégralYang, Song, Ningkang Deng, Yongfeng Qu, Kang Wang, Yuan Yuan, Wenbo Hu, Shengli Wu et Hongxing Wang. « Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding ». Materials 15, no 9 (25 avril 2022) : 3115. http://dx.doi.org/10.3390/ma15093115.
Texte intégralSuga, Tadatomo, Fengwen Mu, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa et Kenichi Iguchi. « Silicon carbide wafer bonding by modified surface activated bonding method ». Japanese Journal of Applied Physics 54, no 3 (15 janvier 2015) : 030214. http://dx.doi.org/10.7567/jjap.54.030214.
Texte intégralHe, Ran, Masahisa Fujino, Akira Yamauchi et Tadatomo Suga. « Novel hydrophilic SiO2wafer bonding using combined surface-activated bonding technique ». Japanese Journal of Applied Physics 54, no 3 (12 février 2015) : 030218. http://dx.doi.org/10.7567/jjap.54.030218.
Texte intégralSUGA, Tadatomo. « Low Temperature Bonding for 3D Integration-Surface Activated Bonding (SAB) ». Hyomen Kagaku 35, no 5 (2014) : 262–66. http://dx.doi.org/10.1380/jsssj.35.262.
Texte intégralThèses sur le sujet "Surface Activated Bonding"
Lomonaco, Quentin. « Etude du collage SAB pour l'élaboration d'hétérostructure ». Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALY027.
Texte intégralThese research work presented in this thesis are dedicated to the study of SAB, "Surface Active Bonding", for the fabrication of heterostructures. These are assemblies of several materials often used in optoelectronics and photonics. SAB bonding is a direct bonding technique under ultrahigh vacuum that enables the spontaneous covalent bonding of two surfaces without glue.To date, mechanical stresses, resulting from differences in thermal expansion coefficients between the materials forming the heterostructure, represent a major challenge for the manufacture of heterostructures; but controlled, they can also be advantageous for the manufacture process and the quality of the final products.The field of studies developed in this study focuses on the fabrication of single-crystal thin-film heterostructures from thick substrates, using the Smart Cut™ process and SAB bonding.This work introduces for the first time the possibility of producing hot bonds using SAB bonding technology, by developing a new method called SAHB for "Surface Active Hot Bonding". The latter offers the opportunity of controlling the temperature during bonding, enabling mechanical stresses due to differences in thermal expansion coefficients in the heterostructure to be managed. One of the main applications of this new SAHB method is that it can be used to transfer strained single-crystal germanium films of several hundred nanometers onto silicon substrates. Finite-element modeling is used to understand this SAHB bonding technology, as it enables structural deformations to be visualized and stress levels to be estimated in order to limit heterostructure breakage during fabrication, while maximizing the stress stored in the transferred film. In addition, the study of SAHB bonding highlights the need for precise temperature management and a high-quality bonding atmosphere to guarantee its effectiveness.This study led to the investigation of SAB bonding mechanisms, with work on the impact of activation on the amorphization of the bonding interface. The results show that the mere presence of dangling bonds is not sufficient to explain the very high adherence of standard SAB, but that it is necessary for the surface to be sufficiently "malleable" to allow asperity tips to crush and dangling bonds to pair.The work presented in this manuscript introduce a new bonding method, the SAHB, and develops the production of the first heterostructures by this route. This method opens up new perspectives for the fabrication of complex structures and the manipulation of stresses in heterogeneous materials.Keywords: Direct bonding, covalent bonding, SAB bonding, heterostructure bonding, silicon bonding, SAHB bonding, film transfer, thin monocrystalline films
Schönström, Linus, Anna Nordh, Anton Strignert, Frida Lemel, Jakob Ekengard, Sofie Wallin et Zargham Jabri. « A process recipe for bonding a silicone membrane to a plastic substrate ». Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-201008.
Texte intégralHu, Hui-Chin, et 胡惠欽. « Improving wafer bonding of dissimilar materials by ozone plasma activated surface ». Thesis, 2016. http://ndltd.ncl.edu.tw/handle/93237377683430443514.
Texte intégral國立中央大學
機械工程學系
104
Wafer Bonding Techniques has an advantage that can combine wafer with different materials with great bonding interface. It provides convenience and integration for high-tech industry. However, it will exist thermal expansion mismatch between different materials, great thermal stress may cause sample debond even crack after annealing. In this work, we developed wafer bonding techniques to bond Si and GaAs wafers. First, we use ultraviolet/ozone (UVO) plasma to modify the surface of wafers. Second, we compare the wafers in symmetrical bonded structure with asymmetric bonded structure. In result, wafers could bond together in 200℃ after surface activation. Besides, the wafers in symmetrical bonded structure could effectively counteract heat stress even heat to 350 ℃, and it is still not crack.
Chapitres de livres sur le sujet "Surface Activated Bonding"
Suga, Tadatomo. « Recent Progress in Surface Activated Bonding ». Dans Ceramic Microstructures, 385–89. Boston, MA : Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5393-9_36.
Texte intégralSuga, Tadatomo, Toshihiro Itoh et Matiar R. Howlader. « An 8-inch Wafer Bonding Apparatus with Ultra-High Alignment Accuracy Using Surface Activated Bonding (SAB) Concept ». Dans Transducers ’01 Eurosensors XV, 222–25. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_52.
Texte intégralShimoi, Norihiro. « Nonthermal Crystalline Forming of Ceramic Nanoparticles by Non-Equilibrium Excitation Reaction Field of Electron ». Dans Nanocrystals [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.97037.
Texte intégralActes de conférences sur le sujet "Surface Activated Bonding"
Suga, Tadatomo, et Fengwen Mu. « Surface Activated Bonding Method for Low Temperature Bonding ». Dans 2018 7th Electronic System-Integration Technology Conference (ESTC). IEEE, 2018. http://dx.doi.org/10.1109/estc.2018.8546367.
Texte intégralWang, Chenxi, Eiji Higurashi et Tadatomo Suga. « Silicon Wafer Bonding by Modified Surface Activated Bonding Methods ». Dans 6th International Conference on Polymers and Adhesives in Microelectronics and Photonics. Polytronic 2007. IEEE, 2007. http://dx.doi.org/10.1109/polytr.2007.4339133.
Texte intégralMu, Fengwen, et Tadatomo Suga. « Room temperature GaN bonding by surface activated bonding methods ». Dans 2018 19th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2018. http://dx.doi.org/10.1109/icept.2018.8480574.
Texte intégralShingo Taniyama, Ying-Hui Wang, Masahisa Fujino et Tadatomo Suga. « Room temperature wafer bonding using surface activated bonding method ». Dans 2008 IEEE 9th VLSI Packaging Workshop of Japan. IEEE, 2008. http://dx.doi.org/10.1109/vpwj.2008.4762236.
Texte intégralMu, F., et T. Suga. « Room Temperature GaN Bonding by Surface Activated Bonding Method ». Dans 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.ps-4-01.
Texte intégralTsukamoto, Kei, Eiji Higurashi et Tadatomo Suga. « Evaluation of surface microroughness for surface activated bonding ». Dans 2010 IEEE CPMT Symposium Japan (Formerly VLSI Packaging Workshop of Japan). IEEE, 2010. http://dx.doi.org/10.1109/cpmtsympj.2010.5679979.
Texte intégralHowlader, M. M. R., et T. Suga. « Surface Activated Bonding Method for Flexible Lamination ». Dans 6th International Conference on Polymers and Adhesives in Microelectronics and Photonics. Polytronic 2007. IEEE, 2007. http://dx.doi.org/10.1109/polytr.2007.4339181.
Texte intégralT., Luttermann, Wich T. et Mikczinski M. « Localized Surface Activated Bonding of Nanoscale Objects ». Dans 8th International Conference on Multi-Material Micro Manufacture. Singapore : Research Publishing Services, 2011. http://dx.doi.org/10.3850/978-981-07-0319-6_225.
Texte intégralHigurashi, Eiji, Masao Nakagawa, Tadatomo Suga et Renshi Sawada. « Surface Activated Flip-Chip Bonding of Laser Chips ». Dans ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73436.
Texte intégralHe, Ran, Masahisa Fujino, Tadatomo Suga et Akira Yamauchi. « Development of combined surface activated bonding (SAB) method for hydrophilic wafer bonding ». Dans 2014 IEEE CPMT Symposium Japan (ICSJ). IEEE, 2014. http://dx.doi.org/10.1109/icsj.2014.7009611.
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