Littérature scientifique sur le sujet « STM à 4 pointes »
Créez une référence correcte selon les styles APA, MLA, Chicago, Harvard et plusieurs autres
Sommaire
Consultez les listes thématiques d’articles de revues, de livres, de thèses, de rapports de conférences et d’autres sources académiques sur le sujet « STM à 4 pointes ».
À côté de chaque source dans la liste de références il y a un bouton « Ajouter à la bibliographie ». Cliquez sur ce bouton, et nous générerons automatiquement la référence bibliographique pour la source choisie selon votre style de citation préféré : APA, MLA, Harvard, Vancouver, Chicago, etc.
Vous pouvez aussi télécharger le texte intégral de la publication scolaire au format pdf et consulter son résumé en ligne lorsque ces informations sont inclues dans les métadonnées.
Articles de revues sur le sujet "STM à 4 pointes"
Geetha, K., et R. Vadivel. « Phoneme Segmentation of Tamil Speech Signals Using Spectral Transition Measure ». Oriental journal of computer science and technology 10, no 1 (4 mars 2017) : 114–19. http://dx.doi.org/10.13005/ojcst/10.01.15.
Texte intégralPAGET, D., OLIVIA PULCI, M. SAUVAGE, Y. GARREAU, LUCIA REINING, P. CHIARADIA, F. BECHSTEDT et R. PINCHAUX. « Do WE UNDERSTAND THE STRUCTURE OF THE GALLIUM-RICH SURFACE of GaAs(001) ? EXPERIMENTAL AND THEORETICAL APPROACHES ». Surface Review and Letters 09, no 03n04 (juin 2002) : 1497–510. http://dx.doi.org/10.1142/s0218625x02003858.
Texte intégralBishop, David. « Torsades de pointes ». Confederation of Australian Critical Care Nurses Journal 3, no 4 (décembre 1990) : 24–30. http://dx.doi.org/10.1016/s1033-3355(11)80052-4.
Texte intégralMcEntee, Joseph. « Burgeoning markets for STM ». Physics World 4, no 4 (avril 1991) : 69–70. http://dx.doi.org/10.1088/2058-7058/4/4/31.
Texte intégralAVERY, A. R., D. M. HOLMES, T. S. JONES et B. A. JOYCE. « AN STM STUDY OF THE (2×4) AND c(4×4) RECONSTRUCTIONS FORMED ON GaAs(001) BY MOLECULAR BEAM EPITAXY ». Surface Review and Letters 01, no 04 (décembre 1994) : 621–24. http://dx.doi.org/10.1142/s0218625x94000801.
Texte intégralJorens, Philippe G., Paul A. Van Den Heuvel et Gaston A. Parizel. « Amiodarone and torsades de pointes ». American Heart Journal 120, no 6 (décembre 1990) : 1482. http://dx.doi.org/10.1016/0002-8703(90)90276-4.
Texte intégralHARRISON, OLIVIA L., JORDAN T. GEBHARDT, CHAD B. PAULK, BRANDON L. PLATTNER, JASON C. WOODWORTH, SUSAN RENSING, CASSANDRA K. JONES et VALENTINA TRINETTA. « Inoculation of Weaned Pigs by Feed, Water, and Airborne Transmission of Salmonella enterica Serotype 4,[5],12:i:− ». Journal of Food Protection 85, no 4 (25 janvier 2022) : 693–700. http://dx.doi.org/10.4315/jfp-21-418.
Texte intégralRobbins, David. « Silicon surface secrets revealed by STM ». Physics World 4, no 4 (avril 1991) : 24–25. http://dx.doi.org/10.1088/2058-7058/4/4/21.
Texte intégralOrtega-Carnicer, J., R. Alcázar, M. De la Torre et J. Benezet. « Pentavalent antimonial-induced torsade de pointes ». Journal of Electrocardiology 30, no 2 (avril 1997) : 143–45. http://dx.doi.org/10.1016/s0022-0736(97)80023-4.
Texte intégralAfni, Nur, Khairil Khairil et Abdullah Abdullah. « Penerapan Pendekatan STM (Sains Teknologi Masyarakat) Pada Konsep Pencemaran Lingkungan Untuk Meningkatkan Hasil Belajar Dan Kemampuan Berpikir Kritis Di Sma Negeri 4 Wira Bangsa Meulaboh ». BIOTIK : Jurnal Ilmiah Biologi Teknologi dan Kependidikan 2, no 2 (31 janvier 2017) : 77. http://dx.doi.org/10.22373/biotik.v2i2.238.
Texte intégralThèses sur le sujet "STM à 4 pointes"
Khelifi, Wijden. « Selective Growth and Characterization of InAs and InSb Nanostructures ». Electronic Thesis or Diss., Université de Lille (2022-....), 2024. http://www.theses.fr/2024ULILN001.
Texte intégralIn the landscape of electronic device fabrication, the semiconductor compounds indium arsenide (InAs) and indium antimonide (InSb) have emerged as materials of significant interest for high-speed telecommunications and infrared optoelectronics. More recently, their excellent electron transport characteristics, characterized by high mobility and strong spin-orbit coupling, render them highly conducive for applications that exploit quantum transport phenomena. However, their deployment is often hampered by the lattice mismatch they possess with conventional III-V substrates, making them defective. This thesis proposes a solution for fabricating good-quality in-plane InAs and InSb nanostructures, using selective area growth by molecular beam epitaxy in SiO2 apertures.A structural and morphological study of InAs and InSb two-dimensional layers and nanowires on GaAs and InP substrates oriented along the [001] and [111] directions has been carried out. The optimization of the growth parameters led to the fabrication of continuous and faceted planar nanostructures with minimized threading defects. These systems were then studied by four-tip scanning tunnelling microscopy in ultra-high vacuum, a technique that eliminates the need for electrode fabrication to characterize the transport properties. The comparison of transport in surface-reconstructed InAs nanowires and core-shell InAs/GaSb nanowires revealed the benefits of embedding the InAs nanowires to significantly increase the electron mobility in the nanowires.Unlike the InAs nanowires, which can be protected by a thin layer of arsenic to preventtheir surface oxidation during their transfer to air, there is no effective protection for InSb.The final part of the thesis therefore focuses on characterizing the deoxidation of InSb (001) and (111) surfaces using a combination of Raman spectroscopy and scanning tunnelling microscopy. This latter study paves the way for subsequent measurements of the transport in InSb nanowires by four-tip scanning tunnelling microscopy.In conclusion, the structural and electronic quality of the InAs and InSb nanowires produced in this work is compatible with the ballistic transport regime. These results lay down the foundations for the fabrication of the more complex III-V structures, highly prized for thedesign of quantum devices
Sordes, Delphine. « Imagerie, manipulation et contact électronique atome par atome sur la surface Si(100) : H avec le microscope à effet tunnel basse température à 4 pointes ». Thesis, Toulouse 3, 2017. http://www.theses.fr/2017TOU30048/document.
Texte intégralThe construction of electronic circuits of atomic section is one of the great challenges of the ultimate nanoelectronics. To build an atomic electronic circuit, it is necessary first to develop the dedicated instrument to build up and then to choose the support surface stabilizing this circuit. On the Au(111) surface prepared in ultra-vacuum, we implemented and stabilized the very first LT-UHV-4 STM. This STM 4-probes microscopes scanning at the same time and independently the same surface was built for the CEMES by the ScientaOmicron company. On Au(111), we reproduced all the experimental results obtained on the best LT-UHV-STM with one probe such as the precision in roughness of 2 pm, the IV characteristics recording without any average on a single atom for several tens of minutes and the atomic manipulation following the pulling, sliding and pushing modes of a single gold atom on the surface. Once this optimization was carried out, we applied our LT-UHV-4 STM to the surface of Si(100):H, probable support of the future electronic atomic circuits. The choice of this medium is discussed in detail before recording and analysis of the STM images. The samples used come either from the semi-industrial full-wafer silicon process developed at CEA-LETI or from their in-situ preparation, which takes place directly in the preparation chamber of the LT-UHV-4 STM. We have taken care to interpret the STM images of the surface Si(100):H in order to locate the position of each hydrogen atom. The atomic lithography by STM has been exploited, by using one tip from our LT-UHV-4 STM, by atom-per-atom vertical mode and faster scanning mode. The last makes atomic writing less accurate. We have constructed our own atomic wires and then atomic contact pads, small squares of Si(100)H defeated by a few nm sides. The leakage currents with 2 probes at the atomic scale have thus been able to be measured on the surface of Si(100):H between two of these pads. To prepare the atomic contacts at least 2 probes on an atomic wire or on nanometric contact pads, we studied in detail the different types of contact points STM-single dangling bond showing the difficulty of reaching a quantum of conductance at contact, due to a possible bands bending. It is therefore difficult without a complementary force measurement to determine, starting from the tunnel contact, the different steps of the mechanical, electronic contact at the chemical contact. Our results open the way to the characterization of electronic circuits constructed atom-by-atom and at atomic scale on the surface of a semiconductor
Zieschang, Michael. « PCI-Einsteckkarte für ATM-Netzwerkanalyse ». Master's thesis, Universitätsbibliothek Chemnitz, 2002. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200200614.
Texte intégralEntwicklung einer Einsteckkarte für PCI-Bus-basierte Hostsysteme zur Analyse von Datenströmen auf ATM-Übertragungsstrecken mit einer Geschwindigkeit von 622 Mbit/s. Realisierung und damit verbundene Vorüberlegungen und daraus und aus gegebenen Spezifikationen erwachsene Teilaufgaben Anwendungsgebiete der Analyzer-Karte Darstellung der einzelnen Entwicklungsschritte Funktionsbeschreibung des ATM-Analyzers Erläuterungen zur Inbetriebnahme der Leiterkarte und der verwendeten Testsoftware Bewertung der Testergebnisse
Hohmeister, Holger. « Darstellung neuer Organometallhalogenide mit Elementen der 13. und 14. Gruppe des Periodensystems und Versuche zur Synthese von Organogermanolen ». Doctoral thesis, [S.l.] : [s.n.], 2003. http://deposit.ddb.de/cgi-bin/dokserv?idn=969563310.
Texte intégralLin, Shang-Shu, et 林上書. « A UHV-STM/STS Study of Electronic Structures of[Ni3(dpa)4(NCS)2] and [Ni11(bnatpya)4(NCS)2](PF6)4 ». Thesis, 2017. http://ndltd.ncl.edu.tw/handle/6j9a9m.
Texte intégral國立臺灣大學
化學研究所
105
This study discuss the arrangement and electricity of two one-dimensional metal string molecules [Ni3(dpa)4(NCS)2] and [Ni11(bnatpya)4(NCS)2]4+ which are different lengths on the Au(111) surface. Sample preparation and surface analysis were obtained by ultrahigh vacuum scanning tunneling microscope (UHV-STM). The samples were prepared by dissolving the metal string molecular with the CH2Cl2 solvent, then drop on the surface of Au(111) and obtaining the [Ni3(dpa)4(NCS)2]/Au(111) and [Ni11(bnatpya)4(NCS)2]4+/Au(111). In the first part, the STM image shows that [Ni3(dpa)4(NCS)2] is adsorbed on the step edge of Au(111) surface, and the height of single metal string molecule could obtained from the height profile. The dI/dV spectra of [Ni3(dpa)4(NCS)2] on Au(111) revealed two characteristic peaks, −0.65 eV and −0.10 eV by the scanning tunneling spectroscopy (STS) .To make sure the molecular characteristics from the image, using the longer molecules of [Ni11(bnatpya)4(NCS)2]4+ to drop on the surface, and the STM image shows the molecules are disorderly and distributed on the surface with one or more repeating monomers by the coffee ring effect. The dI/dV spectrum on the cluster and the single molecule, respectively, the results show that the cluster has a broad peak at the negative bias. In the second part, the chamber is cooled to 78 K to reduce the influence of the thermal disturbance of the molecule and the tip. From the STM images, the electron cloud of single metal string molecule exhibits a left-handed and right-handed configuration with an angle of about 50o between the metal axis and the helical electron cloud. In addition, it is observed that the electron cloud of some molecules reveal non-left and right hand but rather about 90o with the metal axis.
Kumar, Vimal. « Design of Audio Player and Recorder on STM 32F4 Discovery Board ». Thesis, 2015. http://ethesis.nitrkl.ac.in/7689/1/2015_Design_Kumar_(4).pdf.
Texte intégralCheng, Ming-Chi, et 鄭名期. « A UHV-STM/STS Study of Electronic Structures and Electron Transports of [Ni11(bnatpya)4(NCS)2](PF6)4 ». Thesis, 2018. http://ndltd.ncl.edu.tw/handle/f7h8s7.
Texte intégral國立臺灣大學
化學研究所
107
This thesis presents the molecular structures and the single-molecular conductivity of a long-chain-shaped polynuclear metal string complex [Ni11(bnatpya)4(NCS)2]4+ (Ni11) on the single crystal surface of Au(111) by ultrahigh-vacuum scanning tunneling microscopy (UHV-STM). The Au(111) surface was prepared by annealing to generate the reconstruction. Ni11 was dissolved in methanol and deposited on Au(111). At 78 K UHV-STM, the STM images showed oblate-shaped structures of Ni11 on Au(111). From the height profiles, single-molecular size of Ni11 could be obtained from the images of topography. Scanning tunneling spectroscopy (STS) indicated density of states (DOS) of Ni11 by dI/dV spectra exhibiting the distributions of peaks at -1.20 eV and +0.82 eV, excluding the shifting peak of gold surface state. Compared with ultraviolet-visible spectroscopy, the energy difference acquired from dI/dV spectra could be identified with aligned energy of HOMO-LUMO gap. The STM probe was able to contact the ending thiocyanate group of Ni11, which would contribute to the single-molecular circuit while the Ni11 molecules were lifted from the surface. Conductance-to-distance graph was measured in the process of lifting to calculate the single-molecular conductance. The measured conductance at 78 K was slightly higher than the previous results at room temperature. Despite the discrepancy from heat-dependent mechanism of electron tunneling, this is an important reference to further discuss on molecular conductance if considering the effects of setpoint bias as well as coupling interactions between ending thiocyanate group and the electrodes.
Fang, yuan. « Synthesis and Self-Assembly of Quinoidal Molecules at the Liquid-Solid Interface – An STM Investigation ». Thesis, 2013. http://spectrum.library.concordia.ca/977870/4/Fang_MSc_F2013.pdf.
Texte intégralZieschang, Michael. « PCI-Einsteckkarte für ATM-Netzwerkanalyse ». Master's thesis, 2001. https://monarch.qucosa.de/id/qucosa%3A17839.
Texte intégralEntwicklung einer Einsteckkarte für PCI-Bus-basierte Hostsysteme zur Analyse von Datenströmen auf ATM-Übertragungsstrecken mit einer Geschwindigkeit von 622 Mbit/s. Realisierung und damit verbundene Vorüberlegungen und daraus und aus gegebenen Spezifikationen erwachsene Teilaufgaben Anwendungsgebiete der Analyzer-Karte Darstellung der einzelnen Entwicklungsschritte Funktionsbeschreibung des ATM-Analyzers Erläuterungen zur Inbetriebnahme der Leiterkarte und der verwendeten Testsoftware Bewertung der Testergebnisse
Janssen, Jörg. « Synthese löslicher Aggregate des Indiums und Zinns ». Doctoral thesis, 2003. http://hdl.handle.net/11858/00-1735-0000-0006-B074-4.
Texte intégralLivres sur le sujet "STM à 4 pointes"
Samorì, Paolo, dir. STM and AFM Studies on (Bio)molecular Systems : Unravelling the Nanoworld. Berlin, Heidelberg : Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-78395-4.
Texte intégralKramer, Rutger. Rethinking Authority in the Carolingian Empire. NL Amsterdam : Amsterdam University Press, 2019. http://dx.doi.org/10.5117/9789462982642.
Texte intégralChapitres de livres sur le sujet "STM à 4 pointes"
Matsuda, Azusa, Satoshi Sugita et Takao Watanabe. « Pseudogap Probed by STM ». Dans Advances in Superconductivity XI, 151–56. Tokyo : Springer Japan, 1999. http://dx.doi.org/10.1007/978-4-431-66874-9_30.
Texte intégralMurakami, Hironaru, Toshiyuki Kita et Ryozo Aoki. « LT-STM/STS Study on Bi2Sr2CaCu2Oy ». Dans Advances in Superconductivity VII, 57–60. Tokyo : Springer Japan, 1995. http://dx.doi.org/10.1007/978-4-431-68535-7_11.
Texte intégralMajima, Yutaka. « STM Characterization of π-Electron Systems ». Dans Chemical Science of π-Electron Systems, 621–34. Tokyo : Springer Japan, 2015. http://dx.doi.org/10.1007/978-4-431-55357-1_37.
Texte intégralRenner, Christophe, et Øystein Fischer. « Tunneling Spectroscopy and STM Observation of Flux Lines ». Dans Advances in Superconductivity VI, 429–34. Tokyo : Springer Japan, 1994. http://dx.doi.org/10.1007/978-4-431-68266-0_92.
Texte intégralKashiwaya, Satoshi, Masao Koyanagi, Hiroshi Takashima, Mizushi Matsuda et Koji Kajimura. « Magnetic Responses of Zero-bias Conductance Peaks by LT-STM ». Dans Advances in Superconductivity VI, 73–76. Tokyo : Springer Japan, 1994. http://dx.doi.org/10.1007/978-4-431-68266-0_13.
Texte intégralChao, Congping, et Satoaki Arai. « STM Inestigations of the Grain Surface of Bi0.8PbxSr1Ca1Cu1.6O8+y Superconductors ». Dans Advances in Superconductivity II, 529–32. Tokyo : Springer Japan, 1990. http://dx.doi.org/10.1007/978-4-431-68117-5_114.
Texte intégralKumagai, Takashi. « Hydroxyl Dimer : Non-linear I–V Characteristics in an STM Junction ». Dans Visualization of Hydrogen-Bond Dynamics, 91–100. Tokyo : Springer Japan, 2012. http://dx.doi.org/10.1007/978-4-431-54156-1_8.
Texte intégralIkeda, Kazuto, Kenshi Takamuku, Koji Yamaguchi, Rittaporn Itti, Naoki Koshizuka et Shoji Tanaka. « STM Observation on Bi-O Surfaces of Bi2Sr2Ca1-xYxCu2Oy Single-Crystals ». Dans Advances in Superconductivity IV, 299–301. Tokyo : Springer Japan, 1992. http://dx.doi.org/10.1007/978-4-431-68195-3_62.
Texte intégralTing, Wu, M. Badaye, R. Itti, K. Ishimaru, T. Morishita, N. Koshizuka et S. Tanaka. « Low temperature STM/STS measurements on c-axis oriented Y1Ba2Cu4O8 superconductive films ». Dans Advances in Superconductivity VII, 49–52. Tokyo : Springer Japan, 1995. http://dx.doi.org/10.1007/978-4-431-68535-7_9.
Texte intégralRenner, Christophe, Bernard Revaz, Kazuo Kadowaki, Ivan Maggio-Aprile, Andreas Erb, Eric Walker et Øystein Fischer. « STM Vortex Core Spectroscopy and Non-BCS Pairing in High Temperature Superconductors ». Dans Advances in Superconductivity XI, 145–50. Tokyo : Springer Japan, 1999. http://dx.doi.org/10.1007/978-4-431-66874-9_29.
Texte intégralActes de conférences sur le sujet "STM à 4 pointes"
Takada, Kan, Misaichi Takeuchi et Takuji Takahashi. « Light-Illuminated STM Studies on InAs Nano-Structures ». Dans 2001 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2001. http://dx.doi.org/10.7567/ssdm.2001.d-6-4.
Texte intégralLewis, P. A., B. W. Alphenaar et H. Ahmed. « UHV-STM Study of Electron Emission from Individual Silicon Nanopillars ». Dans 2000 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2000. http://dx.doi.org/10.7567/ssdm.2000.d-5-4.
Texte intégralFUKANO, Yoshinobu, Yasuhiro SUGAWARA, Seizo MORITA, Yoshiki YAMANISHI et Takahiko OASA. « Nanometer Resolution Measurement of Dielectric Breakdown of Silicon Dioxide Films with AFM/STM ». Dans 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.pa1-4.
Texte intégralONO, Yukinori, et Michiharu TABE. « STM Study of Thermal Oxidation Process on Si(111) 7×7 Surfaces ». Dans 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.s-v-4.
Texte intégralMüller, M., N. Martín Sabanés, F. Schulz, F. Krecinic, T. Kumagai, T. Kampfrath et M. Wolf. « Quantitative sampling of femtosecond THz voltage pulses and hot electron dynamics in an STM junction ». Dans CLEO : QELS_Fundamental Science. Washington, D.C. : OSA, 2021. http://dx.doi.org/10.1364/cleo_qels.2021.fth4l.4.
Texte intégralMATSUMOTO, KAZUHIKO, Shu Takahashi, Masami Ishii, Masakatsu Hoshi, Akira Kurokawa, Shingo Ichimura et Atsushi Ando. « First Application of STM Nano-Meter Size Oxidation Process to Planar-Type MIM Diode ». Dans 1994 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1994. http://dx.doi.org/10.7567/ssdm.1994.s-i-4-2.
Texte intégralXie, X. Sunney, et Robert C. Dunn. « Fluorescence Spectroscopy on a Single Molecule Basis with a Near-field Spectrometer ». Dans Laser Applications to Chemical Analysis. Washington, D.C. : Optica Publishing Group, 1994. http://dx.doi.org/10.1364/laca.1994.thd.4.
Texte intégralAltfeder, I. B., D. M. Chen et K. A. Matveev. « Electron Interference Fringes on a Pb Quantum Wedge ». Dans Chemistry and Physics of Small-Scale Structures. Washington, D.C. : Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.ctub.1.
Texte intégralZhou, Y., K. S. Yew et D. S. Ang. « A Possible Bipolar HfOx Resistive Memory Device with Self-Rectification - Observations from STM Study ». Dans 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.ps-4-2.
Texte intégralZhang, Li, James A. Bain, Jian-Gang Zhu, Leon Abelmann et Takahiro Onoue. « The Role of STM Tip Shape in Heat Assisted Magnetic Probe Recording on CONI/PT Film ». Dans ASME 2004 3rd Integrated Nanosystems Conference. ASMEDC, 2004. http://dx.doi.org/10.1115/nano2004-46057.
Texte intégralRapports d'organisations sur le sujet "STM à 4 pointes"
Schat, Karel Antoni, Irit Davidson et Dan Heller. Chicken infectious anemia virus : immunosuppression, transmission and impact on other diseases. United States Department of Agriculture, 2008. http://dx.doi.org/10.32747/2008.7695591.bard.
Texte intégralLang, Jonas. Multilevel Modeling in R : Basic and Advanced Methods + 1 Free Seminar. Instats Inc., 2022. http://dx.doi.org/10.61700/sw0snl2upp0gv469.
Texte intégralSela, Shlomo, et Michael McClelland. Investigation of a new mechanism of desiccation-stress tolerance in Salmonella. United States Department of Agriculture, janvier 2013. http://dx.doi.org/10.32747/2013.7598155.bard.
Texte intégralOza, Shardul, et Jacobus Cilliers. What Did Children Do During School Closures ? Insights from a Parent Survey in Tanzania. Research on Improving Systems of Education (RISE), mai 2021. http://dx.doi.org/10.35489/bsg-rise-ri_2021/027.
Texte intégralGruson-Daniel, Célya, et Maya Anderson-González. Étude exploratoire sur la « recherche sur la recherche » : acteurs et approches. Ministère de l'enseignement supérieur et de la recherche, novembre 2021. http://dx.doi.org/10.52949/24.
Texte intégralEshed-Williams, Leor, et Daniel Zilberman. Genetic and cellular networks regulating cell fate at the shoot apical meristem. United States Department of Agriculture, janvier 2014. http://dx.doi.org/10.32747/2014.7699862.bard.
Texte intégralSurficial geology, Ujarattaak Point, Nunavut, NTS 56-P/15 and 16. Natural Resources Canada/CMSS/Information Management, 2022. http://dx.doi.org/10.4095/329414.
Texte intégral