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Articles de revues sur le sujet "Spin-orbit Coupled Electronic Systems"

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Marković, Igor, Matthew D. Watson, Oliver J. Clark, Federico Mazzola, Edgar Abarca Morales, Chris A. Hooley, Helge Rosner et al. « Electronically driven spin-reorientation transition of the correlated polar metal Ca3Ru2O7 ». Proceedings of the National Academy of Sciences 117, no 27 (23 juin 2020) : 15524–29. http://dx.doi.org/10.1073/pnas.2003671117.

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The interplay between spin–orbit coupling and structural inversion symmetry breaking in solids has generated much interest due to the nontrivial spin and magnetic textures which can result. Such studies are typically focused on systems where large atomic number elements lead to strong spin–orbit coupling, in turn rendering electronic correlations weak. In contrast, here we investigate the temperature-dependent electronic structure ofCa3Ru2O7, a4doxide metal for which both correlations and spin–orbit coupling are pronounced and in which octahedral tilts and rotations combine to mediate both global and local inversion symmetry-breaking polar distortions. Our angle-resolved photoemission measurements reveal the destruction of a large hole-like Fermi surface upon cooling through a coupled structural and spin-reorientation transition at 48 K, accompanied by a sudden onset of quasiparticle coherence. We demonstrate how these result from band hybridization mediated by a hidden Rashba-type spin–orbit coupling. This is enabled by the bulk structural distortions and unlocked when the spin reorients perpendicular to the local symmetry-breaking potential at the Ru sites. We argue that the electronic energy gain associated with the band hybridization is actually the key driver for the phase transition, reflecting a delicate interplay between spin–orbit coupling and strong electronic correlations and revealing a route to control magnetic ordering in solids.
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Berger, Michael, Dominik Schulz et Jamal Berakdar. « Spin-Resolved Quantum Scars in Confined Spin-Coupled Two-Dimensional Electron Gas ». Nanomaterials 11, no 5 (11 mai 2021) : 1258. http://dx.doi.org/10.3390/nano11051258.

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Quantum scars refer to an enhanced localization of the probability density of states in the spectral region with a high energy level density. Scars are discussed for a number of confined pure and impurity-doped electronic systems. Here, we studied the role of spin on quantum scarring for a generic system, namely a semiconductor-heterostructure-based two-dimensional electron gas subjected to a confining potential, an external magnetic field, and a Rashba-type spin-orbit coupling. Calculating the high energy spectrum for each spin channel and corresponding states, as well as employing statistical methods known for the spinless case, we showed that spin-dependent scarring occurs in a spin-coupled electronic system. Scars can be spin mixed or spin polarized and may be detected via transport measurements or spin-polarized scanning tunneling spectroscopy.
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HJELM, ANDERS, JOAKIM TRYGG, OLLE ERIKSSON, BÖRJE JOHANSSON et JOHN M. WILLS. « ORBITAL PARAMAGNETISM IN METALLIC SYSTEMS WITH LARGE ANGULAR MOMENTA ». International Journal of Modern Physics B 09, no 21 (30 septembre 1995) : 2735–51. http://dx.doi.org/10.1142/s0217979295001026.

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We demonstrate that the field induced spin and orbital moments in paramagnetic metals in general are parallel, since the Zeeman energy overcomes the spin-orbit energy that is in favor of an antiparallel arrangement when the electronic shell is less than half-filled. In the early actinides, however, the spin-orbit energy becomes sufficiently strong to approach the border where the moments can couple antiparallel. This results in peculiar magnetic states for α-Pu and some uranium compounds, where the spin moments are antiparallel to the applied field and the magnetic response dominated by the orbital character, and consequently these systems display unusual spin densities and magnetic form factors.
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Kochelap, V. A., et A. E. Belyaev. « To 95-th birthday of Professor E.I. Rashba (looking back ones again) ». Semiconductor Physics, Quantum Electronics and Optoelectronics 25, no 3 (6 octobre 2022) : 235–39. http://dx.doi.org/10.15407/spqeo25.03.235.

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The theory of spin-orbit interaction, developed by E.I. Rashba more than 30 years ago, stimulated the rapid development of a new discipline – spintronics – the physics of processes and devices based on the control of spins. The paper summarizes achievements of Prof. Rashba in the early stage of his scientific researches, particularly those, which were performed in Ukraine. Among them, prediction of electric dipole spin resonance (EDSR), phase transitions in spin-orbit coupled systems driven by change of the Fermi surface topology, giant oscillator strength of impurity excitons, and coexistence of free and self-trapped excitons. Solid state physics is the basis of contemporary electronics and optoelectronics. Various electronic, optical, acoustical and other effects and processes in solid define performances of modern solid state devices. Multitude of groups and thousands researchers are involved in discovering, study and using relevant new phenomena. Among them, Professor Emmanuel Rashba with his outstanding results in physics of crystals is seen (rises) as a profound personality. His contribution in almost all branches of solid state physics cannot be exaggerated, some of his results have found important applications. Prof. E.I. Rashba is known as one of the leading theorists in Ukraine, in Soviet Union, and he continued the successful career in United States. Although many years have already passed, scientific community in Ukraine remembers Prof. E.I. Rashba and thankfully appreciates his impact to formation of condensed matter researches in our country. This short text is devoted to Prof. E.I. Rashba and is written on the occasion of his birthday.
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Shah, Muzamil. « Probing topological quantum phase transitions via photonic spin Hall effects in spin-orbit coupled 2D quantum materials ». Journal of Physics D : Applied Physics 55, no 10 (6 décembre 2021) : 105105. http://dx.doi.org/10.1088/1361-6463/ac3c76.

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Abstract Topological photonics is an emerging field in photonics in which various topological and geometrical ideas are used to manipulate and control the behavior of light photons. The interplay between topological matter and the spin degree of freedom of photons provides new opportunities for achieving spin-based photonics applications. In this paper, the photonic spin Hall effect (PSHE) of reflected light from the surface of the topological silicene quantum systems subjected to external electric and radiation fields in the terahertz regime is theoretically investigated. By tuning the external electric and the applied laser fields, we can drive the silicenic system through different topological quantum phase transitions. We demonstrate that the in-plane and transverse spatial spin dependent shifts exhibit extreme values near Brewster’s angles and away from the optical transition frequencies. We reveal that the photonic spin Hall shifts are sensitive to the spin and valley indices as well as to the number of closed gaps. We believe that the spin and valley-resolved PSHE will greatly impact the research in spinoptics, spintronics, and valleytronics.
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Fiorentini, Simone, Nils Petter Jørstad, Johannes Ender, Roberto Lacerda de Orio, Siegfried Selberherr, Mario Bendra, Wolfgang Goes et Viktor Sverdlov. « Finite Element Approach for the Simulation of Modern MRAM Devices ». Micromachines 14, no 5 (22 avril 2023) : 898. http://dx.doi.org/10.3390/mi14050898.

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Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help in improving the design of MRAM cells. In this work, we describe a solver based on the finite element implementation of the Landau–Lifshitz–Gilbert equation coupled to the spin and charge drift-diffusion formalism. The torque acting in all layers from different contributions is computed from a unified expression. In consequence of the versatility of the finite element implementation, the solver is applied to switching simulations of recently proposed structures based on spin-transfer torque, with a double reference layer or an elongated and composite free layer, and of a structure combining spin-transfer and spin-orbit torques.
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Polley, Debanjan, Akshay Pattabi, Jyotirmoy Chatterjee, Sucheta Mondal, Kaushalya Jhuria, Hanuman Singh, Jon Gorchon et Jeffrey Bokor. « Progress toward picosecond on-chip magnetic memory ». Applied Physics Letters 120, no 14 (4 avril 2022) : 140501. http://dx.doi.org/10.1063/5.0083897.

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We offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ∼3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ∼6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.
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Cooper, David L., Joseph Gerratt et Mario Raimondi. « The Spin-coupled Approach to Electronic Structure ». Molecular Simulation 4, no 5 (février 1990) : 293–312. http://dx.doi.org/10.1080/08927029008022393.

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Wang, C. M., et M. Q. Pang. « Optical out-of-plane spin polarization and charge conductivities in spin-orbit-coupled systems in the presence of an in-plane magnetic field ». European Physical Journal B 74, no 1 (4 février 2010) : 19–25. http://dx.doi.org/10.1140/epjb/e2010-00040-7.

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Chen, Xiong-wei, Zhi-gui Deng, Xiao-xi Xu, Shu-lan Li, Zhi-wei Fan, Zhao-pin Chen, Bin Liu et Yong-yao Li. « Nonlinear modes in spatially confined spin–orbit-coupled Bose–Einstein condensates with repulsive nonlinearity ». Nonlinear Dynamics 101, no 1 (27 juin 2020) : 569–79. http://dx.doi.org/10.1007/s11071-020-05692-6.

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Thèses sur le sujet "Spin-orbit Coupled Electronic Systems"

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Celiberti, Lorenzo. « Small polarons in spin-orbit coupled osmates ». Master's thesis, Alma Mater Studiorum - Università di Bologna, 2021. http://amslaurea.unibo.it/24839/.

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Small polarons (SP) have been thoroughly investigated in 3d transition metal oxides and they have been found to play a crucial role in physical phenomena such as charge transport, colossal magnetoresistance and surface reactivity. However, our knowledge about these quasi-particles in 5d systems remains very limited, since the more delocalised nature of the 5d orbitals reduces the strength of the Electronic Correlation (EC), making SP formation in these compounds rather unexpected. Nevertheless, the Spin-Orbit coupled Dirac-Mott insulator Ba2NaOsO6 (BNOO) represents a good candidate for enabling polaron formation in a relativistic background, due to the relatively large EC (U ∼ 3 eV) and Jahn-Teller activity. Moreover, anomalous peaks in Nuclear Magnetic Resonance (NMR) spectroscopy experiments suggest the presence of thermally activated SP dynamics when BNOO is doped with Ca atoms. We investigate SP formation in BNOO both from an electronic and structural point of view by means of fully relativistic first principles calculations. Our numerical simulations predict a stable SP ground state and agree on the value of 810 K for the dynamical process peak found by NMR experiments.
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Walkup, Daniel. « Doping and strain effects in strongly spin-orbit coupled systems ». Thesis, Boston College, 2016. http://hdl.handle.net/2345/bc-ir:106810.

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Thesis advisor: Vidya Madhavan
We present Scanning Tunneling Microscopy (STM) studies on several systems in which spin-orbit coupling leads to new and interesting physics, and where tuning by doping and/or strain can significantly modify the electronic properties, either inducing a phase transition or by sharply influencing the electronic structure locally. In the perovskite Iridate insulator Sr3Ir2O7, we investigate the parent compound, determining the band gap and its evolution in response to point defects which we identify as apical oxygen vacancies. We investigate the effects of doping the parent compound with La (in place of Sr) and Ru (in place of Ir). In both cases a metal-insulator transition (MIT) results: at x ~ 38% with Ru, and x ~ 5% with La. In the La-doped samples we find nanoscale phase separation at dopings just below the MIT, with metallic spectra associated with clusters of La atoms. Further, we find resonances near the Fermi energy associated with individual La atoms, suggesting an uneven distribution of dopants among the layers of the parent compound. Bi2Se3 is a topological insulator which hosts linearly dispersing Dirac surface states. Doping with In (in place of Bismuth) brings about topological phase transition, achieving a trivial insulator at x ~ 4%. We use high-magnetic field Landau level spectroscopy to study the surface state’s properties approaching the phase transition and find, by a careful analysis of the peak positions find behavior consistent with strong surface-state Zeeman effects: g~50. This interpretation implies, however, a relabeling of the Landau levels previously observed in pristine Bi2Se3, which we justify through ab initio calculations. The overall picture is of a g-factor which steadily decreases as In is added up to the topological phase transition. Finally, we examine the effects of strain on the surface states of (001) thin films of the topological crystalline insulator SnTe. When these films are grown on closely-related substrates—in this case PbSe(001)—a rich pattern of surface strain emerges. We use phase-sensitive analysis of atomic-resolution STM topographs to measure the strain locally, and spatially-resolved quasiparticle interference imaging to compare the Dirac point positions in regions with different types of strain, quantifying for the first time the effect of anisotropic strain on the surface states of a topological crystalline insulator
Thesis (PhD) — Boston College, 2016
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Physics
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Zhou, Wenwen. « STM probe on the surface electronic states of spin-orbit coupled materials ». Thesis, Boston College, 2014. http://hdl.handle.net/2345/bc-ir:103564.

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Thesis advisor: Vidya Madhavan
Spin-orbit coupling (SOC) is the interaction of an electron's intrinsic angular momentum (spin) with its orbital momentum. The strength of this interaction is proportional to Z4 where Z is the atomic number, so generally it is stronger in atoms with higher atomic number, such as bismuth (Z=83) and iridium (Z=77). In materials composed of such heavy elements, the prominent SOC can be sufficient to modify the band structure of the system and lead to distinct phase of matter. In recent years, SOC has been demonstrated to play a critical role in determining the unusual properties of a variety of compounds. SOC associated materials with exotic electronic states have also provided a fertile platform for studying emergent phenomena as well as new physics. As a consequence, the research on these interesting materials with any insight into understanding the microscopic origin of their unique properties and complex phases is of great importance. In this context, we implement scanning tunneling microscopy (STM) and spectroscopy (STS) to explore the surface states (SS) of the two major categories of SOC involved materials, Bi-based topological insulators (TI) and Ir-based transition metal oxides (TMO). As a powerful tool in surface science which has achieved great success in wide variety of material fields, STM/STS is ideal to study the local density of states of the subject material with nanometer length scales and is able to offer detailed information about the surface electronic structure. In the first part of this thesis, we report on the electronic band structures of three-dimensional TIs Bi2Te3 and Bi2Se3. Topological insulators are distinct quantum states of matter that have been intensely studied nowadays. Although they behave like ordinary insulators in showing fully gapped bulk bands, they host a topologically protected surface state consisting of two-dimensional massless Dirac fermions which exhibits metallic behavior. Indeed, this unique gapless surface state is a manifestation of the non-trivial topology of the bulk bands, which is recognized to own its existence to the strong SOC. In chapter 3, we utilize quasiparticle interference (QPI) approach to track the Dirac surface states on Bi2Te3 up to ~800 meV above the Dirac point. We discover a novel interference pattern at high energies, which probably originates from the impurity-induced spin-orbit scattering in this system that has not been experimentally detected to date. In chapter 4, we discuss the topological SS evolution in (Bi1-xInx)2Se3 series, by applying Landau quantization approach to extract the band dispersions on the surface for samples with different indium content. We propose that a topological phase transition may occur in this system when x reaches around 5%, with the experimental signature indicating a possible formation of gapped Dirac cone for the surface state at this doping. In the second part of this thesis, we focus on investigating the electronic structure of the bilayer strontium iridate Sr3Ir2O7. The correlated iridate compounds belong to another domain of SOC materials, where the electronic interaction is involved as well. Specifically, the unexpected Mott insulating state in 5d-TMO Sr2IrO4 and Sr3Ir2O7 has been suggested originate from the cooperative interplay between the electronic correlations with the comparable SOC, and the latter is even considered as the driving force for the extraordinary ground state in these materials. In chapter 6, we carried out a comprehensive examination of the electronic phase transition from insulating to metallic in Sr3Ir2O7 induced by chemical doping. We observe the subatomic feature close to the insulator-to-metal transition in response with doping different carriers, and provide detailed studies about the local effect of dopants at particular sites on the electronic properties of the system. Additionally, the basic experimental techniques are briefly described in chapter 1, and some background information of the subject materials are reviewed in chapter 2 and chapter 5, respectively
Thesis (PhD) — Boston College, 2014
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Physics
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Lüffe, Matthias [Verfasser]. « Semiclassical treatment of transport and spin relaxation in spin-orbit coupled systems / Matthias Lüffe ». Berlin : Freie Universität Berlin, 2012. http://d-nb.info/1029850542/34.

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Pezo, Lopez Armando Arquimedes [UNESP]. « Electronic structure of two dimensional systems with spin-orbit interaction ». Universidade Estadual Paulista (UNESP), 2016. http://hdl.handle.net/11449/151633.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
A realização experimental do grafeno em 2004 abriu as portas para os estudos de uma nova geração de materiais, estes chamados materiais bidimensionais são a expressão final do que poderíamos pensar em material plano (monocamada) que, eventualmente, podem ser empilhados para formar o bulk. O grafeno oferece uma grande variedade de propriedades físicas, em grande parte, como o resultado da dimensionalidade de sua estrutura, e pelas mesmas razões, materiais como Fosforeno (P), Siliceno (S), Nitreto de Boro hexagonal (hBN), dicalcogenos de metais de transição (TMDC), etc. São muito interessantes para fins teóricos, como para futuras aplicações tecnológicas que podem-se desenvolver a partir deles, como dispositivos de spintrônica e armazenamento. Neste trabalho o estudo desenvolvido são as propriedades eletrônicas dos materiais apresentados acima (grafeno, fosforeno e MoTe 2 ), e além disso, ja que o acoplamento spin-órbita aumenta à medida que o número atômico tambem aumenta, espera-se que este parâmetro desempenhe um papel na estrutura eletrônica, particularmente para os TMDC’s. Começamos descrevendo genéricamente esses três sistemas, isto é, para o grafeno, podemos usar uma abordagem tipo tight binding, a fim de encontrar a dispersão de energia para as quase-particulas perto do nível de Fermi (Equação de Dirac). Usando cálculos DFT estudou-se de forma geral as propriedades desses sistemas com a inclusão do espin órbita. Abordou-se cálculos para descrever os efeitos do acoplo spin órbita sobre os materiais isolados, tambem nas heterostruturas (duas camadas formadas por eles). Finalmente, tambem estudou-se a possibilidade de defeitos e sua possível influência sobre a estrutura eletrônica das heterostruturas.
The experimental realization of graphene in 2004 opened the gates to the studies of a new generation of materials, these so-called 2 dimensional materials are the final expression of what we could think of a plane material (monolayer) that eventually can be stacked to form a bulk. Graphene, the wonder material, offers a large variety of physical properties, in great part, as the result of the dimensionality of its structure, and for the same reasons, materials like phosphorene(P), silicene(S), hexagonal Boron Nitride (hBN), transition metal dichalcogenides(TMDC), etc. are very interesting for theoretical purposes, as for the future technological applications that we can develope from them, such as Spintronics and Storage devices. In this dissertation we theoretically study the electronic properties of the materials presented above (graphene, Phosphorene and MoTe2), and besides that, since the spin-orbit coupling strength increases as the atomic number does, we expect that this paremeter plays a role in the electronic structure, particularly for the TMDC. We start describing generically those three systems using density functional theory including the effect of spin orbit. We address calculations to describe the effects of spin orbit on the isolated materials as well as the heterostructures. Finally we also include the possibility of defects in graphene and their possible influence on the electronic structure of heterostructures.
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Pezo, Lopez Armando Arquimedes. « Electronic structure of two dimensional systems with spin-orbit interaction / ». São Paulo, 2016. http://hdl.handle.net/11449/151633.

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Orientador: Alexandre Reily Rocha
Banca: Marcelo Takeshi Yamashita
Banca: Cedric Rocha Leão
Resumo: A realização experimental do grafeno em 2004 abriu as portas para os estudos de uma nova geração de materiais, estes chamados materiais bidimensionais são a expressão final do que poderíamos pensar em material plano (monocamada) que, eventualmente, podem ser empilhados para formar o bulk. O grafeno oferece uma grande variedade de propriedades físicas, em grande parte, como o resultado da dimensionalidade de sua estrutura, e pelas mesmas razões, materiais como Fosforeno (P), Siliceno (S), Nitreto de Boro hexagonal (hBN), dicalcogenos de metais de transição (TMDC), etc. São muito interessantes para fins teóricos, como para futuras aplicações tecnológicas que podem-se desenvolver a partir deles, como dispositivos de spintrônica e armazenamento. Neste trabalho o estudo desenvolvido são as propriedades eletrônicas dos materiais apresentados acima (grafeno, fosforeno e MoTe 2 ), e além disso, ja que o acoplamento spin-órbita aumenta à medida que o número atômico tambem aumenta, espera-se que este parâmetro desempenhe um papel na estrutura eletrônica, particularmente para os TMDC's. Começamos descrevendo genéricamente esses três sistemas, isto é, para o grafeno, podemos usar uma abordagem tipo tight binding, a fim de encontrar a dispersão de energia para as quase-particulas perto do nível de Fermi (Equação de Dirac). Usando cálculos DFT estudou-se de forma geral as propriedades desses sistemas com a inclusão do espin órbita. Abordou-se cálculos para descrever os efeitos do acoplo s... (Resumo completo, clicar acesso eletrônico abaixo)
Abstract: The experimental realization of graphene in 2004 opened the gates to the studies of a new generation of materials, these so-called 2 dimensional materials are the nal expression of what we could think of a plane material (monolayer) that eventually can be stacked to form a bulk. Graphene, the wonder material, o ers a large variety of physical properties, in great part, as the result of the dimensionality of its structure, and for the same reasons, materials like phosphorene(P), silicene(S), hexagonal Boron Nitride (hBN), transition metal dichalcogenides(TMDC), etc. are very interesting for theoretical purposes, as for the future technological applications that we can develope from them, such as Spintronics and Storage devices. In this dissertation we theoretically study the electronic properties of the materials presented above (graphene, Phosphorene and MoTe2), and besides that, since the spin-orbit coupling strength increases as the atomic number does, we expect that this paremeter plays a role in the electronic structure, particularly for the TMDC. We start describing generically those three systems using density functional theory including the e ect of spin orbit. We address calculations to describe the e ects of spin orbit on the isolated materials as well as the heterostructures. Finally we also include the possibility of defects in graphene and their possible in uence on the electronic structure of heterostructures
Mestre
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Chen, Xiang. « Electronic phase behaviors in spin-orbit coupled magnets at the localized and itinerant limits ». Thesis, Boston College, 2018. http://hdl.handle.net/2345/bc-ir:108183.

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Thesis advisor: Stephen Wilson
The magnetic interaction in materials generally can be categorized into two extremes: localized and itinerant. This work will focus on the electronic and magnetic properties of two prototypical magnetic compounds, which fall into the opposite extremes, i:e:, the spin-orbit coupled Mott insulator Sr₂IrO₄ (Sr214) described by the localized Heisenberg model and the itinerant helical (nearly-ferromagnetic) metal MnSi pictured with band or Stoner magnetism. The single layered cuprate analogue Sr₂IrO₄ has attracted considerable attentions in recent years, due to its unusual electronic and magnetic properties and the potential to access superconducting states. The exotic jeff = 1/2 ground state for the Ir⁴⁺ (5d⁵) ions results from the delicate balance of competing/cooperating energy scales, such as the stronger spin-orbit coupling (SOC) in 5d materials as compared to 3d transition metal oxides (TMOs), crystal electric field (CEF) splitting and electron-electron correlations. Superconducting states are theoretically predicted to be achievable if sufficient carriers are introduced into this spin-orbit assisted compound, which later triggers tremendous experimental works toward the realization of superconductivity. Here in this work a combined study of various probes, such as transport, magnetization, X-ray and neutron scattering measurements, focusing on the electronic and magnetic properties, is presented in the perturbed spin-orbit coupled Mott (SOM) state. Specifically in electron doped (Sr₁₋ₓLaₓ)₂IrO₄, a detailed mapping of magnetism with respect to electron doping is presented, demonstrating the gradual transition from long range magnetic order in parent state, to intermediate short range order, and eventually into the incommensurate (IC) spin density wave (SDW) state with increasing electron doping. Our picture supports the conjecture that the quenched Mott phases in electron-doped Sr₂IrO₄ and hole doped La₂CuO₄ share common competing electronic phases. On the other hand, the prototypical itinerant metal MnSi is examined by inelastic neutron scattering (INS). Our experimental data directly demonstrate the collapse of linear spin wave theory for localized Heisenberg magnets in the large energy limit, although the low energy dispersion is still described by the ferromagnetic spin wave theory. Most importantly, our observations display the chimney-like dispersion spectrum up to the energy scale of at least 240 meV, which is more than one order of magnitude larger than the Heisenberg interaction energy scale. For the first time, solid characterizations of Stoner excitations in itinerant helimagnet (nearly ferromagnetic) have been demonstrated up to an exceedingly large energy scale. Our intriguing results will greatly promote further understanding and exploration of Stoner excitations in itinerant magnets
Thesis (PhD) — Boston College, 2018
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Physics
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Turner, L. W. « Some simple pseudo-systems that model Jahn-Teller systems with spin-orbit coupling ». Thesis, University of Oxford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.380009.

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Rudolph, Martin. « Quantum transport in mesoscopic systems of Bi and other strongly spin-orbit coupled materials ». Diss., Virginia Tech, 2013. http://hdl.handle.net/10919/20374.

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Systems with strong spin-orbit coupling are of particular interest in solid state physics as an avenue for observing and manipulating spin physics using standard electrical techniques. This dissertation focuses on the characteristics of elemental bismuth (Bi), which exhibits some of the strongest intrinsic spin-orbit coupling of all elements, and InSb, which exhibits some of the strongest intrinsic spin-orbit coupling of all compound semiconductors. The experiments performed study the quantum transport signatures of nano- and micron-scale lithographically defined devices as well as spin-orbit coupled material/ferromagnet interfaces. All Bi structures are fabricated from Bi thin "films, and hence a detailed analysis of
the characteristics of Bi "film growth by thermal evaporation is provided. Morphologically and electrically high quality "films are grown using a two stage deposition procedure. The phase and spin coherence of Bi geometries constrained in one, two, and three dimensions are systematically studied by analysis of the weak antilocalization transport signature, a quantum interference phenomenon sensitive to spin-orbit coupling. The "findings indicate that the phase coherence scales proportionally to the limiting dimension of the structure for sizes less than 500 nm. Specifically, in Bi wires, the phase coherence length is approximately as long as the wire width. Dephasing due to quantum confinement e"ffects limit the phase coherence in small Bi structures, impairing the observation of controlled interference phenomena in nano-scale Bi rings. The spin coherence length is independent of dimensional constraint by the film thickness, but increases significantly as the lateral dimensions, such as wire width, are constrained. This is a consequence of the quantum transport contribution from the strongly spin-orbit coupled Bi(001) surface state. To probe the Bi surface state further, Bi/CoFe junctions are fabricated. The anisotropic magnetoresistance of the CoFe is modifi"ed when carriers tunnel into the CoFe from Bi, possibly due to a spin dependent tunneling process or an interaction between the spin polarized density of states in CoFe and the anisotropic spin-orbit coupled density of states in Bi. InSb/CoFe junctions are studied as InSb "films are a simpler spin-orbit coupled system compared to Bi "films. For temperatures below 3.5 K, a large, symmetric, and abrupt negative magnetoresistance is observed. The low-"field high resistance state has similar temperature and magnetic "field dependences as the superconducting phase, but a superconducting component in the device measurements seems absent. A differential conductance measurement of the InSb/CoFe interface during spin injection indicates a quasiparticle gap present at the Fermi energy, coinciding with the large magnetoresistance.
Ph. D.
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Asmar, Mahmoud M. « Electronic and Spin Transport in Dirac-Like Systems ». Ohio University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1437564830.

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Livres sur le sujet "Spin-orbit Coupled Electronic Systems"

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Uchida, Masaki. Spectroscopic Study on Charge-Spin-Orbital Coupled Phenomena in Mott-Transition Oxides. Tokyo : Springer Japan, 2013.

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Winkler, Roland. Spin-orbit coupling effects in two-dimensional electron and hole systems. Berlin : Springer, 2003.

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Uchida, Masaki. Spectroscopic Study on Charge-Spin-Orbital Coupled Phenomena in Mott-Transition Oxides. Springer, 2013.

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Uchida, Masaki. Spectroscopic Study on Charge-Spin-Orbital Coupled Phenomena in Mott-Transition Oxides. Springer, 2016.

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Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems. Springer, 2003.

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Winkler, Roland. Spin-Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems. Springer, 2003.

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Winkler, Roland. Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems. Springer, 2010.

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8

Melnikov, D. V., J. Kim, L. X. Zhang et J. P. Leburton. Few-electron quantum-dot spintronics. Sous la direction de A. V. Narlikar et Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.2.

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This article examines the spin and charge properties of double and triple quantum dots (QDs) populated containing just a few electrons, with particular emphasis on laterally coupled QDs. It first describes the theoretical approach, known as exact diagonalization method, utilized on the example of the two-electron system in coupled QDs that are modelled as two parabolas. The many-body problem is solved via the exact diagonalization method as well as variational Heitler–London and Monte Carlo methods. The article proceeds by considering the general characteristics of the two-electron double-QD structure and limitations of the approximate methods commonly used for its theoretical description. It also discusses the stability diagram for two circular dots and investigates how its features are affected by the QD elliptical deformations. Finally, it assesses the behavior of the two-electron system in the realistic double-dot confinement potentials.
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Morawetz, Klaus. Kinetic Theory of Systems with SU(2) Structure. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198797241.003.0021.

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Systems with spin-orbit coupling and magnetic fields exhibit a SU(2) structure. Large classes of materials and couplings can be written into an effective spin-orbit coupled Hamiltonian with Pauli structure. Appropriate kinetic equations are derived keeping the quantum spinor structure. It results in coupled kinetic equations of scalar and vector distributions. The spin-orbit coupling, the magnetic field and the vector part of the selfenergy can be written in terms of an effective Zeeman field which couples both distributions. The currents and linear response are derived and the anomalous parts due to the coupling of the occurring band splitting are discussed. The response in magnetic fields reveals subtle retardation effects from which the classical and quantum Hall effect result as well as anomalous Hall effects. As application the dynamical conductivity of grapheme is successfully calculated and compared to the experiments.
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Morawetz, Klaus. Interacting Systems far from Equilibrium. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198797241.001.0001.

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In quantum statistics based on many-body Green’s functions, the effective medium is represented by the selfenergy. This book aims to discuss the selfenergy from this point of view. The knowledge of the exact selfenergy is equivalent to the knowledge of the exact correlation function from which one can evaluate any single-particle observable. Complete interpretations of the selfenergy are as rich as the properties of the many-body systems. It will be shown that classical features are helpful to understand the selfenergy, but in many cases we have to include additional aspects describing the internal dynamics of the interaction. The inductive presentation introduces the concept of Ludwig Boltzmann to describe correlations by the scattering of many particles from elementary principles up to refined approximations of many-body quantum systems. The ultimate goal is to contribute to the understanding of the time-dependent formation of correlations. Within this book an up-to-date most simple formalism of nonequilibrium Green’s functions is presented to cover different applications ranging from solid state physics (impurity scattering, semiconductor, superconductivity, Bose–Einstein condensation, spin-orbit coupled systems), plasma physics (screening, transport in magnetic fields), cold atoms in optical lattices up to nuclear reactions (heavy-ion collisions). Both possibilities are provided, to learn the quantum kinetic theory in terms of Green’s functions from the basics using experiences with phenomena, and experienced researchers can find a framework to develop and to apply the quantum many-body theory straight to versatile phenomena.
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Chapitres de livres sur le sujet "Spin-orbit Coupled Electronic Systems"

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Culcer, Dimitrie. « Semiclassical Spin Transport in Spin-Orbit Coupled Systems ». Dans Encyclopedia of Complexity and Systems Science, 8104–12. New York, NY : Springer New York, 2009. http://dx.doi.org/10.1007/978-0-387-30440-3_479.

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Nakatani, Naoki, Jia-Jia Zheng et Shigeyoshi Sakaki. « Approach of Electronic Structure Calculations to Crystal ». Dans The Materials Research Society Series, 209–55. Singapore : Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-0260-6_11.

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AbstractNowadays, the importance of molecular crystals and solids with regular structures is increasing in both basic chemistry and applied fields. However, theoretical studies of those systems based on electronic structure theories have been limited. Although density functional theory (DFT) calculations using generalized gradient approximation type functional under periodic boundary condition is effective for such theoretical studies, we need some improvements for calculating the dispersion interaction and the excited state of crystals. Accordingly, in this chapter, two methods for calculating the electronic structures of molecular crystals are discussed: cluster-model/periodic-model (CM/PM)-combined method and quantum mechanics/periodic-molecular mechanics (QM/periodic-MM) method. In the CM/PM-combined method, an infinite crystal system is calculated by the DFT method under periodic boundary condition, and important moieties, which are represented by CMs, are calculated by either DFT method with hybrid-type functionals or wave function theories such as the Møller–Plesset second-order perturbation theory (MP2), spin-component-scaled-MP2, and coupled-cluster singles and doubles theory with perturbative triples (CCSD(T)). This method is useful for gas adsorption into crystals such as metal–organic frameworks. In the QM/periodic-MM method, an important moiety is calculated using a QM method such as the DFT method with hybrid-type functionals and wave function theories, where the effects of the crystal are incorporated into the QM calculation via the periodic MM method using a classical force field. This method is useful for theoretical studies of excited states and chemical reactions. The applications of these methods in the following processes are described in this chapter: adsorption of gas molecules on metal–organic frameworks, chemical reactions in crystals, and luminescence of the crystals of transition metal complexes. To the best of our knowledge, the theoretical calculations conducted in this chapter show one of the successful approaches of electronic structure theories to molecular crystals, because of the reasonable and practical approximations.
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Bencini, Alessandro, et Dante Gatteschi. « Spin Hamiltonians ». Dans Electron Paramagnetic Resonance of Exchange Coupled Systems, 20–47. Berlin, Heidelberg : Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-74599-7_2.

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Darabad, Robabeh Rahimi, Kazunobu Sato, Patrick Carl, Peter Höfer, Raymond Laflamme et Takeji Takui. « Exploiting Quantum Effects in Electron-Nuclear Coupled Molecular Spin Systems ». Dans Electron Spin Resonance (ESR) Based Quantum Computing, 25–50. New York, NY : Springer New York, 2016. http://dx.doi.org/10.1007/978-1-4939-3658-8_2.

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Abane, M., M. Elchikh et S. Bahlouli. « Spin-Orbit Coupling’s Effect on the Electronic Properties of Heavy Elements-Based Compounds ». Dans Lecture Notes in Networks and Systems, 679–83. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-37207-1_73.

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Shiba, Hiroyuki, et Ryousuke Shiina. « Aspects of Coupled Spin-Orbital Degrees of Freedom in d- and f-Electron Systems ». Dans Springer Series in Solid-State Sciences, 45–52. Berlin, Heidelberg : Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-642-60041-8_5.

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Takui, Takeji, Shigeaki Nakazawa, Hideto Matsuoka, Kou Furukawa, Kazunobu Sato et Daisuke Shiomi. « Molecule-Based Exchange-Coupled High-Spin Clusters : Conventional, High-Field/High-Frequency and Pulse-Based Electron Spin Resonance of Molecule-Based Magnetically Coupled Systems ». Dans EPR of Free Radicals in Solids II, 71–162. Dordrecht : Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-94-007-4887-3_3.

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Eckle, Hans-Peter. « Electronic Systems ». Dans Models of Quantum Matter, 585–630. Oxford University Press, 2019. http://dx.doi.org/10.1093/oso/9780199678839.003.0016.

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The Bethe ansatz can be generalized to problems where particles have internal degrees of freedom. The generalized method can be viewed as two Bethe ansätze executed one after the other: nested Bethe ansatz. Electronic systems are the most relevant examples for condensed matter physics. Prominent electronic many-particle systems in one dimension solvable by a nested Bethe ansatz are the one-dimensional δ‎-Fermi gas, the one-dimensional Hubbard model, and the Kondo model. The major difference to the Bethe ansatz for one component systems is a second, spin, eigenvalue problem, which has the same form in all cases and is solvable by a second Bethe ansatz, e.g. an algebraic Bethe ansatz. A quantum dot tuned to Kondo resonance and coupled to an isolated metallic ring presents an application of the coupled sets of Bethe ansatz equations of the nested Bethe ansatz.
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Cao, Gang, et Lance E. DeLong. « Introduction ». Dans Physics of Spin-Orbit-Coupled Oxides, 3–30. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780199602025.003.0001.

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The fundamental and technological importance of transition metal oxides, and the relationship of the present work to previous monographs dealing with transition metal oxides are reviewed. The relatively abundant 3d-transition metal oxides are contrasted with the rarer 4d- and 5d-transition metal oxides that exhibit a unique interplay between spin-orbit, exchange, crystalline electric field and Coulomb correlations. The combined effect of these fundamental interactions yields peculiar quantum states and empirical trends that markedly differ from those of their 3d counterparts. General trends in the electronic structure are related to generalized phase diagrams of the magnetic and insulating ground states. The intriguing absence of experimental evidence for predicted topological states and superconductivity in these materials are discussed.
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Sipahigil, Alp, et Mikhail D. Lukin. « Quantum optics with diamond color centers coupled to nanophotonic devices ». Dans Current Trends in Atomic Physics, 1–28. Oxford University Press, 2019. http://dx.doi.org/10.1093/oso/9780198837190.003.0001.

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Chapter 1 reviews recent advances towards the realization of quantum networks based on atom-like solid-state quantum emitters coupled to nanophotonic devices. Specifically, focus is on experiments involving the negatively charged silicon-vacancy color center in diamond. These emitters combine homogeneous, coherent optical transitions and a long-lived electronic spin quantum memory. Optical and spin properties of this system at cryogenic temperatures and experiments where silicon-vacancy centers are coupled to nanophotonic cavities are discussed. Finally, the chapter discusses experiments demonstrating quantum nonlinearities at the single-photon level and two-emitter entanglement in a single nanophotonic device.
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Actes de conférences sur le sujet "Spin-orbit Coupled Electronic Systems"

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Cappellini, Giacomo, Lorenzo F. Livi, Lorenzo Franchi, Jacopo Catani, Massimo Inguscio et Leonardo Fallani. « Realization of strongly interacting Fermi gases and spin-orbit coupled systems with an optical clock transition ». Dans 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8087447.

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Brown, Ross. « On the Study of Inhomogeneous Broadening and Related Quantities by Molecular Dynamics and Quantum Chemistry. » Dans Spectral Hole-Burning and Luminescence Line Narrowing : Science and Applications. Washington, D.C. : Optica Publishing Group, 1992. http://dx.doi.org/10.1364/shbl.1992.tub34.

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Most resonances of molecules, such as optical, infra-red or electron spin resonance transitions are shifted and broadened in solids, compared to the spectra of the isolated molecule in the gaseous phase. Inhomogeneous or statistical broadening reflects the variety of surroundings felt by the many molecules probes in a sample while homogeneous broadening, a dynamical effect, is caused for example by the elastic Interaction of the electronic degrees of freedom with intermolecular phonons, or structural rearrangement by tunneling relaxation (two level systems). Homogeneous linewidths at low temperatures are much larger in amorphous materials than in crystals, with quite different temperature dependencies, reflecting the kind and density of modes coupled to the electronic transition. Hence, homogeneous broadening can add to our understanding of the differences between crystals and glasses, and has been studied intensively.
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Culcer, Dimitrie, Hong Liu, Akihiko Sekine, A. H. MacDonald, Elizabeth Marcellina et A. R. Hamilton. « Anomalies in magneto-transport in spin-orbit coupled systems ». Dans Spintronics XI, sous la direction de Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe et Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2323582.

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Mardonov, Sh, M. Modugno et E. Ya Sherman. « Effects of Anomalous Velocity in Spin-orbit Coupled Systems ». Dans Symmetry and Structural Properties of Condensed Matter. WORLD SCIENTIFIC, 2017. http://dx.doi.org/10.1142/9789813234345_0009.

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Zhang, Zhifeng, Haoqi Zhao, Shuang Wu, Tianwei Wu, Xingdu Qiao, Zihe Gao, Ritesh Agarwal et al. « Hyperdimensional spin-orbit microlaser ». Dans CLEO : Science and Innovations. Washington, D.C. : Optica Publishing Group, 2023. http://dx.doi.org/10.1364/cleo_si.2023.sth1q.4.

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Despite the rapid development of photonic devices and systems, on-chip information technologies are mostly limited to two-level systems due to the lack of sufficient reconfigurability. Here, we demonstrate a high-dimensional, spin-orbit microlaser for chip-scale flexible generation and manipulation of arbitrary four-level states. Two microcavities coupled through a non-Hermitian synthetic gauge field are designed to emit spin-orbit-coupled states of light with six degrees of freedom (DOFs). The vectorial state of the emitted laser beam in free space can be mapped on a Bloch hypersphere defining an SU(4) symmetry, demonstrating dynamical generation and reconfiguration of high-dimensional superposition states with high fidelity.
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Baumberg, J. J., S. A. Crooker, F. Flack, N. Samarth et D. D. Awschalom. « Ultrafast Coherent Spin Torques in Magnetic Quantum Wells ». Dans International Conference on Ultrafast Phenomena. Washington, D.C. : Optica Publishing Group, 1996. http://dx.doi.org/10.1364/up.1996.pdp.1.

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Introducing magnetic material into semiconductor nanostructures evokes potent magnetic tuning of the spin-split energy levels due to the strong exchange coupling between the quantum-confined charge carriers and the sublattice of magnetic ions. By uniting low-dimensional magnetic heterostructures with ultrafast spin spectroscopy we discover a new aspect to these systems, the exchange-coupled spin torques acting on both photoinjected carriers and the embedded local moments. Our time-resolved Faraday rotation technique1 identifies the initial injection of spin-polarized carriers, multi-terahertz precession of the electrons, and the coherent transfer of hole angular momentum to the magnetic subsystem via the ultrafast rotation of the local moments. The perturbed ions then undergo free-induction decay, thus enabling the first time-domain all-optical electron spin resonance (ESR) measurements in submonolayer magnetic planes.
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Gupta, Reena, Dilna Azhikodan, G. S. Singh et Jürgen Bosse. « Dimensional crossover in chemical potential of synthetic spin-orbit coupled Fermi systems ». Dans SOLID STATE PHYSICS : PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4791528.

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Çakir, Ö, et T. Takagahara. « Spin Dynamics of Electron Nuclei Coupled System in a Double Quantum Dot ». Dans PHYSICS OF SEMICONDUCTORS : 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730284.

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Tyagi, Pawan. « Spin Photovoltaic Effect on Molecule Coupled Ferromagnetic Films of a Magnetic Tunnel Junction ». Dans ASME 2013 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/imece2013-63866.

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Economical solar energy harvesting can be boosted by the discovery of fundamentally new photovoltaic mechanism, and a suitable system to realize it with commonly available materials. One promising route is to focus on spin property of the electron, not charge, and develop spin photovoltaic effect with widely available ferromagnetic metals like iron and nickel. This paper reports the observation of photovoltaic effect on the molecular spintronics device composed of a magnetic tunnel junctions (MTJ) testbed and organometallic molecular clusters (OMCs). Our MSDs were produced by bridging the OMC channels between the ferromagnetic films of a prefabricated MTJ testbed with exposed side edges. The MTJ testbed exhibited OMC induced strong increase in exchange coupling and photovoltaic effect. Control experiments on isolated ferromagnetic films, same as utilized in the MTJ testbed, suggested that OMCs neither affected the magnetic properties nor produced any photovoltaic effect. Photovoltaic effect was only observed on the pair of ferromagnetic films serving as magnetic electrodes in a MTJ. Our recent Monte Carlo simulations and multiple magnetic characterizations provide evidence that molecules induced strong coupling between two ferromagnetic films can dramatically alter the overall magnetic properties of a MTJ; presumably making an ordinary MTJ suitable for spin based photovoltaic effect. The photovoltaic effect on our molecular spintronics devices (MTJ+OMCs) was sensitive towards the external magnetic field and temperature. Present paper motivates further studies to understand the spin photovoltaic effect in molecular spintronics devices.
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Ishii, Fumiyuki, Hiroki Kotaka et Takashi Onishi. « Spin–Orbit Interaction Effects in the Electronic Structure of B20-Type CoSi : First-Principles Density Functional Study ». Dans Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.3.016019.

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