Littérature scientifique sur le sujet « Spin-dependent Hall effects »
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Articles de revues sur le sujet "Spin-dependent Hall effects"
DYAKONOV, M. I. « SPIN HALL EFFECT ». International Journal of Modern Physics B 23, no 12n13 (20 mai 2009) : 2556–65. http://dx.doi.org/10.1142/s0217979209061986.
Texte intégralZhang, Yun-Hai, et Ming-Hua Zhang. « Hall and Nernst effects in monolayer MoS2 ». International Journal of Modern Physics B 30, no 08 (30 mars 2016) : 1650041. http://dx.doi.org/10.1142/s0217979216500417.
Texte intégralGANICHEV, S. D. « MAGNETO-GYROTROPIC PHOTOGALVANIC EFFECTS IN SEMICONDUCTOR QUANTUM WELLS ». International Journal of Modern Physics B 22, no 01n02 (20 janvier 2008) : 115–16. http://dx.doi.org/10.1142/s0217979208046189.
Texte intégralEzawa, Motohiko. « Spin-dependent Coulomb interaction and quantum Hall effects in graphene ». Physica B : Condensed Matter 403, no 5-9 (avril 2008) : 1502–4. http://dx.doi.org/10.1016/j.physb.2007.10.193.
Texte intégralSoukhorukov, Andrey V., Davud V. Guseinov, Alexei V. Kudrin, Sergey A. Popkov, Alexandra P. Detochenko, Alexandra V. Koroleva, Alexander A. Ezhevskii, Anton A. Konakov, Nikolai V. Abrosimov et Helge Riemann. « The Impurity Spin-Dependent Scattering Effects in the Transport and Spin Resonance of Conduction Electrons in Bismuth Doped Silicon ». Solid State Phenomena 242 (octobre 2015) : 327–31. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.327.
Texte intégralShah, Muzamil. « Probing topological quantum phase transitions via photonic spin Hall effects in spin-orbit coupled 2D quantum materials ». Journal of Physics D : Applied Physics 55, no 10 (6 décembre 2021) : 105105. http://dx.doi.org/10.1088/1361-6463/ac3c76.
Texte intégralBagraev, N. T., L. E. Klyachkin, V. S. Khromov, A. M. Malyarenko, V. A. Mashkov, T. V. Matveev, V. V. Romanov, N. I. Rul et K. B. Taranets. « High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches ». Физика и техника полупроводников 52, no 4 (2018) : 473. http://dx.doi.org/10.21883/ftp.2018.04.45822.11.
Texte intégralBajracharya, Prabesh, Vinay Sharma, Anthony Johnson et Ramesh C. Budhani. « Resonant precession of magnetization and precession—induced DC voltages in FeGaB thin films ». Journal of Physics D : Applied Physics 55, no 7 (12 novembre 2021) : 075303. http://dx.doi.org/10.1088/1361-6463/ac34ab.
Texte intégralLiu, Qianbiao, et Lijun Zhu. « Current-induced perpendicular effective magnetic field in magnetic heterostructures ». Applied Physics Reviews 9, no 4 (décembre 2022) : 041401. http://dx.doi.org/10.1063/5.0116765.
Texte intégralLone, Aijaz H., S. Amara et H. Fariborzi. « Magnetic tunnel junction based implementation of spike time dependent plasticity learning for pattern recognition ». Neuromorphic Computing and Engineering 2, no 2 (25 mars 2022) : 024003. http://dx.doi.org/10.1088/2634-4386/ac57a2.
Texte intégralThèses sur le sujet "Spin-dependent Hall effects"
Dang, Thi Huong. « Interfacial skew tunneling in group III-V and group IV semiconductors driven by exchange and spin-orbit interactions ; Study in the frame of an extended k.p theory ». Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLX089/document.
Texte intégralWe report on theoretical, analytical and computational investigations and k.p calculations of electron and hole tunneling, in model systems and heterostructures composed of exchange-split III-V semiconductors involving spin-orbit interaction (SOI). We show that the interplay of SOI and exchange interactions at interfaces and tunnel junctions results in a large difference of transmission for carriers, depending on the sign of their incident in-plane wave vector (k//): this leads to interfacial skew-tunneling effects that we refer to as Anomalous Tunnel Hall Effect (ATHE). In a 2x2 exchange-split band model, the transmission asymmetry (A) between incidence angles related to +k// and -k// wave vector components, is shown to be maximal at peculiar points of the Brillouin zone corresponding to a totally quenched transmission (A = 100%). More generally, we demonstrate the universal character of the transmission asymmetry A vs. in-plane wavevector component, for given reduced kinetic energy and exchange parameter, A being universally scaled by a unique function, independent of the spin-orbit strength and of the material parameters. Similarly, striking tunneling phenomena arising in topological insulators have just been predicted. While they all are related to the spin-orbit directional anisotropy, ATHE differs from the tunneling Hall effect, spontaneous anomalous, and spin Hall effects, or spin-galvanic effect, previously reported for electron transport, by its giant forward asymmetry and chiral nature. These features have non-trivial connection with the symmetry properties of the system. All these results show that a new class of tunneling phenomena can now be investigated and experimentally probed.When valence bands are involved, we show (using 14x14 Hamiltonian and within a 2x2 toy model) that ATHE accurate calculations rely on a subtle treatment of the spurious (unphysical) states and we give an insight into the topology of the complex band structure. We introduce two numerical methods to remove spurious states and successfully, include them in 30-band codes able to describe indirect bandgap group-IV semiconductors. Calculations performed in the valence bands of model heterostructures including tunnel barriers, in both 6x6 and 14x14 k.p Hamiltonians without inversion asymmetry, more astonishingly highlight the same trends in the transmission asymmetry which appears to be related to the difference of orbital chirality and to the related branching (overlap) of the corresponding evanescent wave functions responsible for the tunneling current. Besides, we built an analytical model and developed scattering perturbative techniques based on Green’s function method to analytically deal with electrons and holes and to compare these results with numerical calculations. The agreement between the different approaches is very good. In the case of holes, the asymmetry appears to be robust and persists even when a single electrode is magnetic
Chen, Son-Hsien, et 陳松賢. « Spin-Dependent Quantum Phenomena : Spin Hall Effect and Spin Pumping ». Thesis, 2009. http://ndltd.ncl.edu.tw/handle/42277272346347454369.
Texte intégral國立臺灣大學
物理研究所
97
Spin-dependent quantum phenomena, the spin-Hall effect and spin-pumping, are investigated with employing the Landauer-Keldysh formalism, the Keldysh-nonequilibrium-Green-function technique applied to the Landauer setup. As one advantage from this method, physical quantities such as, charge and spin occupations, charge and spin currents, and conductance can all be obtained in a unified way. Analysis will be given mainly on these quantities. The spin-Hall effect in the two-dimensional sample made of semiconductor heterostructure with Rashba and Dresselhaus spin-orbit interaction (coupling) is studied. The spin-precession, which originates from these two SO couplings and plays an important role in the spin Hall effect, can be elucidated by the spin propagator constructed via the non-Abelian (non-commutable) spin-orbit gauge. Applications based on the spin-precession are proposed by considering a square ring etched from the two-dimensional system mentioned above. The spin-Hall effect in the presence of magnetic field, non-magnetic defect, and magnetic impurity (-ies) are also discussed. In particular, the exchange between two magnetic impurities is non-collinear, reflecting the existence of the spin precession of mediating electrons. Furthermore, the quantum spin Hall effect in graphene is also examined. We point out that the size of the sample is relevant to the quantization of the spin Hall conductance; the size of graphene has to be large enough to get the quantized conductance. On the issue of spin-pumping, we consider one-, two-, and three-dimensional systems. In the one-dimensional tight-binding model, the analytical form of the pumped spin currents yield fundamental understanding of the pumping; a plain and insightful physical picture is established to explain the pumping mechanism. In the two-dimensional topological-insulator graphene, a setup based on the interplay of the quantum spin Hall effect and spin pumping is proposed. This setup offers an experimental proof via electric means for the existence of the topological-insulator phase. Distinguishable from most of the present theoretical results, in the three-dimensional case, our calculations yield the same order of magnitude of the converted charge voltage measured in a magnetic tunneling junction with spin-pumping.
Saidaoui, Hamed Ben Mohamed. « Impact of Disorder on Spin Dependent Transport Phenomena ». Diss., 2016. http://hdl.handle.net/10754/619953.
Texte intégralLivres sur le sujet "Spin-dependent Hall effects"
Wunderlich, J., K. Olejník, L. P. Zârbo, V. P. Amin, J. Sinova et T. Jungwirth. Spin-injection Hall effect. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.003.0016.
Texte intégralValenzuela, S. O. Introduction. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.003.0011.
Texte intégralTakanashi, K., et Y. Sakuraba. Spin polarization in magnets. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.003.0005.
Texte intégralAnsermet, J. Ph. Spintronics with metallic nanowires. Sous la direction de A. V. Narlikar et Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.3.
Texte intégralActes de conférences sur le sujet "Spin-dependent Hall effects"
Yoshida, Nobukatsu, et Mikael Fogelström. « Spin-dependent Proximity Effects in d-wave Superconductor/Half-metal Heterostructures ». Dans LOW TEMPERATURE PHYSICS : 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2354990.
Texte intégralFawcett, Gordon, Walter Johnstone et W. L. K. Yim. « Design and experimental optimisation of an evanescent-field fibre-optic refractometer ». Dans The European Conference on Lasers and Electro-Optics. Washington, D.C. : Optica Publishing Group, 1994. http://dx.doi.org/10.1364/cleo_europe.1994.ctho4.
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