Bibliographies thématiques / Solar cells, Thin film, Tin sulfide, SnS

Littérature scientifique sur le sujet « Solar cells, Thin film, Tin sulfide, SnS »

Auteur : Grafiati

Publié le 11 mars 2023

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Articles de revues sur le sujet "Solar cells, Thin film, Tin sulfide, SnS"

Nair, P. K., A. R. Garcia-Angelmo et M. T. S. Nair. « Cubic and orthorhombic SnS thin-film absorbers for tin sulfide solar cells ». physica status solidi (a) 213, n^o 1 (26 octobre 2015) : 170–77. http://dx.doi.org/10.1002/pssa.201532426.

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Mukherjee, A., et P. Mitra. « Structural and optical characteristics of SnS thin film prepared by SILAR ». Materials Science-Poland 33, n^o 4 (1 décembre 2015) : 847–51. http://dx.doi.org/10.1515/msp-2015-0118.

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AbstractSnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR) method. The films were prepared using tin chloride as tin (Sn) source and ammonium sulfide as sulphur (S) source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measurement. The value of band gap was about 1.63 eV indicating that SnS can be used as an important material for thin film solar cells. The surface morphology showed a smooth, homogenous film over the substrate. Characteristic stretching vibration mode of SnS was observed in the absorption band of FT-IR spectrum. The electrical activation energy was about 0.306 eV.

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Sajadnia, Mohsen, Sajjad Dehghani, Zahra Noraeepoor et Mohammad Hossein Sheikhi. « Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells ». World Journal of Engineering 17, n^o 4 (6 juin 2020) : 527–33. http://dx.doi.org/10.1108/wje-02-2020-0068.

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Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.

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Hegde, S. S., et K. Ramesh. « Advances in low-cost and nontoxic materials based solar cell devices ». Journal of Physics : Conference Series 2070, n^o 1 (1 novembre 2021) : 012043. http://dx.doi.org/10.1088/1742-6596/2070/1/012043.

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Abstract Photovoltaics (PV) have become increasingly popular and reached as the third-largest renewable energy source. Thin-film solar cells made from earth-abundant, inexpensive and environmentally friendly materials are needed to replace the current PV technologies whose large-scale applications are limited by material and/or resource constraints. Near optimum direct optical bandgap of 1.3 eV, high absorption coefficient (>104 cm−1), less toxic, and abundant raw resources along with considerable scalability have made tin sulfide (SnS) as a strategic choice for next-generation PVs. In this review, limitations of leading commercial PV technologies and the status of a few alternate low-cost PV materials are outlined. Recent literature on crucial physical properties of SnS thin-films and the present status of SnS thin-film-based solar cells are discussed. Deficiency and adequacy of some of the key properties of SnS including carrier mobility (μ), minority carrier lifetime (τ), and absorption coefficient (α) are discussed in comparison of existing commercial solar cell materials. Future research trends on SnS based solar cells to enhance their conversion efficiencies towards the theoretical maximum of 24% from present ~5% and its prospectus as next-generation solar cell is also discussed.

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Patel, T. H. « Effect of Temperature on Structural and Optical Properties of Chemically Deposited Tin Sulfide Thin Films Suitable for Photovoltaic Structures ». Advanced Materials Research 665 (février 2013) : 93–100. http://dx.doi.org/10.4028/www.scientific.net/amr.665.93.

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SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy band gap phases e.g. SnS2, Sn2S3and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. Thin films of tin sulphide have been deposited using CBD at three different bath temperatures (27, 35 and 45 °C) onto microscope glass substrates. The X ray diffraction (XRD) analysis of the deposited films reveled that all films has orthorhombic SnS phase as dominant one with preferred orientations along (111) direction. The temperature influence on the crystalline nature and the presence of other phases of SnS has been observed. The average grain size in the films determined from Scherers formula as well as from Williamson-Hall-plot method agrees well with each other. Energy dispersive X-ray (EDAX) analysis used to determine the film composition suggested that films are almost stoichiometric. The scanning electron microscopy (SEM) reveals that deposited films are pinhole free and consists of uniformly distributed spherical grains. The optical analysis in the 200-1200 nm range suggests that direct allowed transitions are dominant in the absorption process in the films with variation in the band gap (~1.79 to ~2.05 eV) due to variation in deposition temperature.

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Khalkar, Arun, Kwang-Soo Lim, Seong-Man Yu, Dong-Wook Shin, Tae-Sik Oh et Ji-Beom Yoo. « Effects of Sulfurization Pressure on the Conversion Efficiency of Cosputtered Cu2ZnSnS4Thin Film Solar Cells ». International Journal of Photoenergy 2015 (2015) : 1–7. http://dx.doi.org/10.1155/2015/750846.

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We report herein Cu2ZnSnS4(CZTS) thin film solar cells with 6.75% conversion efficiency, without an antireflection coating. The CZTS precursors have been prepared by cosputtering using three different targets on Mo-coated substrates: copper (Cu), tin sulfide (SnS), and zinc (Zn). The postsulfurization was carried out at different pressures in a H2S/N2environment at 550°C for one hour. A comparative study on the performances of solar cells with CZTS absorber layers prepared at different sulfurization pressures was carried out. The device efficiency of 1.67% using CZTS absorber and low pressure sulfurization is drastically improved, to an efficiency of 6.75% with atmospheric pressure sulfurization.

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Ballipinar, Faruk, et Alok C. Rastogi. « Single-step organic vapor phase sulfurization synthesis of p-SnS photo-absorber for graded band-gap thin film heterojunction solar cells with n-ZnO1-x Sx ». MRS Advances 1, n^o 41 (2016) : 2801–6. http://dx.doi.org/10.1557/adv.2016.325.

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ABSTRACTTin sulfide has emerged as a promising solar absorber among the IV-VI binary compound which is earth-abundant and non-toxic. This research provides a new perspective on synthesis of photosensitive monophasic SnS films by organic chemical vapor sulfurization of Sn thin film. S-radicals formed by closed space pyrolysis of di-tert-butyl disulfide (TBDS) diffusively react with Sn to produce SnS film. SnS being an amphoteric semiconductor converts to n-type by trivalent Sb and Bi dopants. The organic vapor sulfurization method described in this research facilitates single-step synthesis of buried junction structures and thus SnS solar cells in a p-n homojunction or p-i-n structures. In this work, vacuum evaporated Sn thin film with a thickness of 100 nm, was converted to SnS by sulfurization under 100 sccm flow of TBDS vapor preheated to 100°C and structural phase evolution and film growth kinetics were investigated for sulfurization at 200°C, 300°C and 400°C for a periods 90 min. X-ray diffraction studies establish single phase highly crystalline film in orthorhombic crystal structure forms at 200°C. Raman scattering results confirm SnS formation with the identification of 2Ag, 2B2g optical phonons modes. Optical bandgap studies confirm a low energy 1.1-1.4 eV indirect bandgap and a strong absorption threshold between 1.4 to 1.6 eV direct band gap depending on the sulfurization conditions correlating with intrinsic defects and phase structure of the film.

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Ballipinar, Faruk, et A. C. Rastogi. « Tin sulfide (SnS) semiconductor photo-absorber thin films for solar cells by vapor phase sulfurization of Sn metallic layers using organic sulfur source ». Journal of Alloys and Compounds 728 (décembre 2017) : 179–88. http://dx.doi.org/10.1016/j.jallcom.2017.08.295.

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Ballipinar, Faruk. « Tin sulfide (SnS) thin-film solar cells deposited by organic chemical vapor sulfurization based on CdS and high transmittance Cd(S,O) n-type layers with the superstrate device structure ». MRS Communications 10, n^o 4 (16 octobre 2020) : 660–66. http://dx.doi.org/10.1557/mrc.2020.78.

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Reddy, N. Koteeswara, M. Devika, K. R. Gunasekhar et E. S. R. Gopal. « Fabrication of Photovoltaic Devices Using ZnO Nanostructures and SnS Thin Films ». Nano 11, n^o 07 (juillet 2016) : 1650077. http://dx.doi.org/10.1142/s1793292016500776.

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The development of nontoxic and cost-effective solar cell devices is one of the challenging tasks even now. With this objective, solar cell devices using tin mono sulfide (SnS) thin films and zinc oxide (ZnO) nanostructures with a superstrate configuration of ITO/ZnO film/ZnO nanorods/SnS film/Zn have been fabricated and their photovoltaic properties have been investigated. Vertically aligned ZnO nanostructures were grown on indium doped tin oxide substrate by chemical solution method and then, SnS thin films were deposited by thermal evaporation method. A typical solar cell device exhibited significant light conversion efficiency with an open circuit voltage and short circuit current of 350[Formula: see text]mV and 5.14[Formula: see text]mA, respectively.

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Thèses sur le sujet "Solar cells, Thin film, Tin sulfide, SnS"

Sun, Leizhi. « Improved Thin Film Solar Cells Made by Vapor Deposition of Earth-Abundant Tin(II) Sulfide ». Thesis, Harvard University, 2014. http://dissertations.umi.com/gsas.harvard:11539.

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Tin(II) sulfide (SnS) is an earth-abundant, inexpensive, and non-toxic absorber material for thin film solar cells. SnS films are deposited by atomic layer deposition (ALD) through the reaction of a tin precursor, bis(N,N'-diisopropylacetamidinato)tin(II), and hydrogen sulfide. The SnS films demonstrate excellent surface morphology, crystal structure, phase purity, stoichiometry, elemental purity, and optical and electrical properties.
Engineering and Applied Sciences

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Burton, Lee. « Phase stability and composition of tin sulfide for thin-film solar cells ». Thesis, University of Bath, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.642045.

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This thesis details an investigation into the factors that could be restricting the performance of tin sulfide thus far. It is shown that there is confusion in the literature with respect to the assignment of different tin sulfide phases, and that the presence of these phases cannot easily be discerned with routine diffraction methods. In order to better understand the behaviour of tin sulfide in devices, it is important to isolate these materials as separate components and to consider the distinct properties of each. %Indeed, even a fundamental property such as the colour of SnS is still subject to conflicting reports. Herein, the targeted synthesis of SnS, SnS2 and Sn2S3 by chemical vapour transport is used to produce phase-pure single crystals, which are characterised in terms of structural, optical and electrical properties. These are compared directly with results from modern simulation methods as well as the work of others to explore fully the possible origins of performance losses. It is found that the work function of SnS is significantly lower than those of alternate successful photovoltaic materials, which means that novel device architectures are necessary in order to unlock the full potential of this promising photo-absorber. Concerns are also raised regarding the stability of the tin monosulfide phase with respect to degradation and defect formation over time, processes that undoubtedly affect device performance and lifetimes if sufficient safeguards are not put in place to suppress them. Further results of this 3 year research project also provide a broader platform for achieving sustainable light harvesting devices from the abundant and cheap elements, tin and sulfur.

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Sinsermsuksakul, Prasert. « Development of Earth-Abundant Tin(II) Sulfide Thin-Film Solar Cells by Vapor Deposition ». Thesis, Harvard University, 2013. http://dissertations.umi.com/gsas.harvard:10987.

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To sustain future civilization, the development of alternative clean-energy technologies to replace fossil fuels has become one of the most crucial and challenging problems of the last few decades. The thin film solar cell is one of the major photovoltaic technologies that is promising for renewable energy. The current commercial thin film PV technologies are based on $Cu(In,Ga)Se_2$ and CdTe. Despite their success in reducing the module cost below $1/Wp, these absorber materials face limitations due to their use of scarce (In and Te) and toxic (Cd) elements. One promising candidate for an alternative absorber material is tin monosulfide (SnS). Composed of cheap, non-toxic and earth-abundant elemental constituents, SnS can potentially provide inexpensive PV modules to reach the global energy demand in TW levels. Because of the high volatility of sulfur and various oxidation states of tin, non- stoichiometric chemical composition, traces of other phases $(i.e. Sn, Sn_2S_3, and SnS_2)$, and elemental impurities (e.g. oxygen) are usually observed in SnS films obtained from various reported deposition techniques. First, we present a process to prepare pure, stoichiometric, single-phase SnS films from atomic layer deposition (ALD). The as-deposited SnS films exhibit several attractive properties, including suitable energy band gaps $(E_{g,}~ 1.1 – 1.3 eV)$, a large absorption coefficient $(\alpha > 10^4 cm^{˗1})$, and a proper carrier concentration $([p] ~ 10^{15} – 10^{16} cm^{˗3})$. Then, heterojunction solar cells were fabricated from p-type SnS and n-type zinc oxysulfide (Zn(O,S)). A record high active-area efficiency of 2.46 % was achieved via conduction band offset engineering by varying the oxygen-to-sulfur ratio in Zn(O,S). Finally, we address two approaches potentially used for improving a device efficiency of the SnS solar cell. First, via doping to create an n-type SnS, a p-n homojunction device could be made. We present the processes and the results of doping SnS films with antimony and chlorine, potential n-type dopants. Second, by post-deposition heat treatment, an improvement in the transport properties of SnS film can be achieved. We discuss the effect of temperature and an annealing ambient $(N_2, H_2S$, and sulfur) on grain growth and the electrical properties of annealed SnS films.
Chemistry and Chemical Biology

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Yu, Yue. « Thin Film Solar Cells with Earth Abundant Elements : from Copper Zinc Tin Sulfide to Organic-Inorganic Hybrid Halide Perovskite ». University of Toledo / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1513289830601094.

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DI, MARE Simone. « Tin sulphide solar cells by thermal evaporation ». Doctoral thesis, 2017. http://hdl.handle.net/11562/961461.

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Produrre energia elettrica dalla combustione di carburanti di origine fossile o dalla fissione di materiale radioattivo significa inquinare il pianeta, impoverirlo delle sue risorse e non garantire un futuro alle generazioni future. Sebbene nei suoi report annuali l’agenzia internazionale per l’energia (IEA) dipinga una situazione di espansione della produzione di energia “verde”, il crescente fabbisogno di energia pulita e a basso costo spinge la ricerca verso nuove frontiere. Nel panorama del fotovoltaico, di anno in anno si vedono maturare i frutti della ricerca negli annunci di nuovi record mondiali di efficienza per molte tecnologie: nuove tecnologie emergenti, basate su concetti o materiali innovativi, si stanno aggiungendo a tecnologie mature, quali quelle basate su Si, CdTe o CuInxGa(1-x)Se2. Un esempio di queste nuove tecnologie sono quelle basate sui semiconduttori composti totalmente da elementi chimici non tossici ed abbondanti nella crosta terrestre (quindi potenzialmente a basso costo), come Cu2ZnSnS4 o SnS. In questa tesi di dottorato, verranno studiati alcuni aspetti del solfuro di stagno, SnS, in vista di una sua possibile applicazione come strato assorbente per celle solari a film sottile. Il solfuro di stagno ha ottime proprietà optoelettroniche (band gap diretta nella regione di massima efficienza teorica, ottimo coefficiente di assorbimento della luce, e mostra intrinsecamente conduzione di tipo p), che lo rendono un ottimo candidato per il fotovoltaico del futuro. In questa tesi, verranno dapprima discusse le difficoltà incontrate con l’apparato di deposizione e come sono state superate. Successivamente verrà descritto e analizzato il dispositivo solare basato sul solfuro di stagno e caratterizzato dalla migliore prestazione: questo risultato è in linea con quanto pubblicato in letteratura. La difficoltà nel riprodurre questo risultato in modo sistematico ci spingerà poi ad indagarne le possibili cause: suggeriremo la presenza di una possibile correlazione tra la performance dei nostri dispositivi e la storia termica del materiale grezzo utilizzato per evaporare lo strato assorbente. Nel proseguo della tesi, dato che anche il miglior risultato ha comunque mostrato una performance lontana dal limite teorico per un materiale con la band gap dell’SnS, studieremo gli effetti di alcuni trattamenti post deposizione ideati per migliorare le caratteristiche optoelettroniche attraverso il miglioramento della qualità cristallina dell’assorbitore. Tali trattamenti post deposizione sono fondamentali in altre tecnologie, come nel caso del CdTe. Si studieranno due tipologie di trattamento termico: in atmosfera controllata o in aria, utilizzando vari composti a base di cloro e non, atti a favorire la ricristallizzazione dell’assorbitore. I risultati ottenuti verranno discussi caso per caso. Infine, anziché concentrarci ancora sulle caratteristiche dell’assorbitore stesso, ma sempre con lo scopo finale di migliorare le prestazioni dei nostri dispositivi, investigheremo delle alternative per gli altri strati che costituiscono nel loro insieme la cella solare: il contatto elettrico anteriore, quello posteriore, e infine il materiale semiconduttore di tipo n che completa la giunzione p-n.
The production of electricity by the combustion of fossil fuels or by the fission of radioactive materials leads to the pollution of Earth’s environment, impoverishes Earth of its resources and does not secure the future for generations to come. Although International Energy Agency (IEA) in its annual reports depicts an increase of electricity production from renewable energy sources, the increasing need for low cost clean energy pushes research towards new frontiers. In photovoltaics, year after year, we see research coming to fruition with the announcements of new world record efficiencies for many technologies: new emerging technologies, based on innovative concepts or materials, are added to the mature ones, such as those based on Si, CdTe o CuInxGa(1-x)Se2. Examples of these innovations are those based on semiconductor compounds totally constituted by non-toxic and Earth’s crust abundant chemical species (which could potentially be low cost materials), such as Cu2ZnSnS4 or SnS. In this doctoral dissertation, we will investigate some aspects of SnS (tin sulphide), in view of its application as absorber layer for thin film solar cells. Tin sulphide is characterized by excellent optoelectronic properties (direct band gap in the region of the maximum theoretical efficiency, excellent absorption coefficient, and shows intrinsically p-type conduction), which makes SnS a promising candidate for the photovoltaic of the future. In the first part of this thesis, we will discuss the issues related to the deposition apparatus, and the strategies applied to solve them. Afterwards, the SnS based solar device, which exhibited the best performance, will be described and discussed: our result is consistent with similar processes from international laboratories. Since the reproducibility of this result has been observed to be a complex task, we will study its origin. A possible correlation between the performance of our devices and the thermal history of the SnS raw material used to evaporate the absorber layer has been suggested. Then, since even the best performing device exhibited a poor performance, i.e. far from the theoretical limit for a material with the SnS energy band gap, we will study the effects of several post deposition treatments, designed to enhance optoelectronic characteristics by improving the crystalline quality of the absorber material. Similar post deposition treatments are fundamental in other technologies, as in the CdTe case. We will study two types of thermal treatment: those taking place in a controlled atmosphere and those in air, by adding different compounds (with and without chlorine) to promote the absorber layer recrystallization process. The results will be discussed case by case. Up to now, we focused on the improvement of the absorber layer to enhance the performance of our devices. In the last part of this thesis, we will investigate some alternatives for the other layers constituting the solar device: the front and back contact, and the n-type semiconductor material which completes the p-n junction.

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Livres sur le sujet "Solar cells, Thin film, Tin sulfide, SnS"

Ito, Kentaro, dir. Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells. Chichester, UK : John Wiley & Sons Ltd, 2014. http://dx.doi.org/10.1002/9781118437865.

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Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells. Wiley, 2015.

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Ito, Kentaro. Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells. Wiley & Sons, Incorporated, John, 2014.

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Ito, Kentaro. Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells. Wiley & Sons, Incorporated, John, 2014.

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Ito, Kentaro. Copper Zinc Tin Sulfide-Based Thin Film Solar Cells. Wiley & Sons, Incorporated, John, 2014.

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Sun, Leizhi. Improved Thin Film Solar Cells Made by Vapor Deposition of Earth-Abundant Tin(II) Sulfide. 2014.

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Chapitres de livres sur le sujet "Solar cells, Thin film, Tin sulfide, SnS"

Redinger, Alex, et Susanne Siebentritt. « Loss Mechanisms in Kesterite Solar Cells ». Dans Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells, 363–86. Chichester, UK : John Wiley & Sons Ltd, 2015. http://dx.doi.org/10.1002/9781118437865.ch16.

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Unold, Thomas, Justus Just et Hans-Werner Schock. « Coevaporation of CZTS Films and Solar Cells ». Dans Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells, 221–38. Chichester, UK : John Wiley & Sons Ltd, 2015. http://dx.doi.org/10.1002/9781118437865.ch10.

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Ito, Kentaro. « An Overview of CZTS-Based Thin-Film Solar Cells ». Dans Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells, 1–41. Chichester, UK : John Wiley & Sons Ltd, 2015. http://dx.doi.org/10.1002/9781118437865.ch1.

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Shin, Byungha, Talia Gershon et Supratik Guha. « CZTS-Based Thin-Film Solar Cells Prepared via Coevaporation ». Dans Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells, 335–61. Chichester, UK : John Wiley & Sons Ltd, 2015. http://dx.doi.org/10.1002/9781118437865.ch15.

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Jäger-Waldau, Arnulf. « Market Challenges for CZTS-Based Thin-Film Solar Cells ». Dans Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells, 43–52. Chichester, UK : John Wiley & Sons Ltd, 2015. http://dx.doi.org/10.1002/9781118437865.ch2.

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Hages, Charles J., et Rakesh Agrawal. « Synthesis of CZTSSe Thin Films from Nanocrystal Inks ». Dans Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells, 239–70. Chichester, UK : John Wiley & Sons Ltd, 2015. http://dx.doi.org/10.1002/9781118437865.ch11.

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Tanaka, Kunihiko. « CZTS Thin Films Prepared by a Non-Vacuum Process ». Dans Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells, 271–87. Chichester, UK : John Wiley & Sons Ltd, 2015. http://dx.doi.org/10.1002/9781118437865.ch12.

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Mellikov, Enn, Mare Altosaar, Marit Kauk-Kuusik, Kristi Timmo, Dieter Meissner, Maarja Grossberg, Jüri Krustok et Olga Volobujeva. « Growth of CZTS-Based Monograins and Their Application to Membrane Solar Cells ». Dans Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells, 289–309. Chichester, UK : John Wiley & Sons Ltd, 2015. http://dx.doi.org/10.1002/9781118437865.ch13.

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Li, Joel B., et Bruce M. Clemens. « The Role of Grain Boundaries in CZTS-Based Thin-Film Solar Cells ». Dans Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells, 311–33. Chichester, UK : John Wiley & Sons Ltd, 2015. http://dx.doi.org/10.1002/9781118437865.ch14.

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Gunawan, Oki, Tayfun Gokmen et David B. Mitzi. « Device Characteristics of Hydrazine-Processed CZTSSe ». Dans Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells, 387–411. Chichester, UK : John Wiley & Sons Ltd, 2015. http://dx.doi.org/10.1002/9781118437865.ch17.

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