Bibliographies thématiques / Single electron devices

Littérature scientifique sur le sujet « Single electron devices »

Auteur : Grafiati
Publié le 14 mars 2023

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Articles de revues sur le sujet "Single electron devices"

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Oda, Shunri. « Single Electron Devices ». IEEJ Transactions on Electronics, Information and Systems 121, no 1 (2001) : 19–22. http://dx.doi.org/10.1541/ieejeiss1987.121.1_19.

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SMITH, DORAN D. « SINGLE ELECTRON DEVICES ». International Journal of High Speed Electronics and Systems 09, no 01 (mars 1998) : 165–207. http://dx.doi.org/10.1142/s0129156498000099.

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In the mid 1980s Averin and Likharev predicted that with the use of ultrasmall tunnel junctions a time correlation of electron flow through a junction could be observed, and permit the measurement of the effect of a net charge of less than one electron on the junction. Both effects were soon experimentally verified, and since that time there has been an explosion of work in the filed of single electron devices. This chapter reviews the fundamental concepts behind the operation of such devices. it then describes some of the single electron effects studied in semiconductors. Superconducting devices are then constrasted to the semiconductor and the normal metal single electron devices. The details of some current applications are described, and a thumbnail sketch of current fabrication methods is given.
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Ahmed, Haroon, et Kazuo Nakazato. « Single-electron devices ». Microelectronic Engineering 32, no 1-4 (septembre 1996) : 297–315. http://dx.doi.org/10.1016/0167-9317(95)00179-4.

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TAKAHASHI, YASUO, AKIRA FUJIWARA, MASAO NAGASE, HIDEO NAMATSU, KENJI KURIHARA, KAZUMI IWADATE et KATSUMI MURASE. « Silicon single-electron devices ». International Journal of Electronics 86, no 5 (mai 1999) : 605–39. http://dx.doi.org/10.1080/002072199133283.

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Takahashi, Yasuo, Yukinori Ono, Akira Fujiwara et Hiroshi Inokawa. « Silicon single-electron devices ». Journal of Physics : Condensed Matter 14, no 39 (20 septembre 2002) : R995—R1033. http://dx.doi.org/10.1088/0953-8984/14/39/201.

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FLENSBERG, KARSTEN, ARKADI A. ODINTSOV, FEIKE LIEFRINK et PAUL TEUNISSEN. « TOWARDS SINGLE-ELECTRON METROLOGY ». International Journal of Modern Physics B 13, no 21n22 (10 septembre 1999) : 2651–87. http://dx.doi.org/10.1142/s0217979299002587.

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We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed in the context of other standards. The operation principles of single electron transistors, turnstiles and pumps are explained and the fundamental limits of these devices are discussed in detail. We describe the various physical mechanisms that influence the device uncertainty and review the analytical and numerical methods needed to calculate the intrinsic uncertainty and to optimise the fabrication and operation parameters. Recent experimental results are evaluated and compared with theoretical predictions. Although there are discrepancies between theory and experiments, the intrinsic uncertainty is already small enough to start preparing for the first SET-based metrological applications.
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Li, Rui-Hao, Jun-Yang Liu et Wen-Jing Hong. « Regulation strategies based on quantum interference in electrical transport of single-molecule devices ». Acta Physica Sinica 71, no 6 (2022) : 067303. http://dx.doi.org/10.7498/aps.71.20211819.

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The quantum interference effect in single-molecule devices is a phenomenon in which electrons are coherently transported through different frontier molecular orbitals with multiple energy levels, and the interference will occur between different energy levels. This phenomenon results in the increase or decrease of the probability of electron transmission in the electrical transport of the single-molecule device, and it is manifested in the experiment when the conductance value of the single-molecule device increases or decreases. In recent years, the use of quantum interference effects to control the electron transport in single-molecule device has proved to be an effective method, such as single-molecule switches, single-molecule thermoelectric devices, and single-molecule spintronic devices. In this work, we introduce the related theories of quantum interference effects, early experimental observations, and their regulatory role in single-molecule devices.
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Labra-Muñoz, Jacqueline A., Arie de Reuver, Friso Koeleman, Martina Huber et Herre S. J. van der Zant. « Ferritin-Based Single-Electron Devices ». Biomolecules 12, no 5 (15 mai 2022) : 705. http://dx.doi.org/10.3390/biom12050705.

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We report on the fabrication of single-electron devices based on horse-spleen ferritin particles. At low temperatures the current vs. voltage characteristics are stable, enabling the acquisition of reproducible data that establishes the Coulomb blockade as the main transport mechanism through them. Excellent agreement between the experimental data and the Coulomb blockade theory is demonstrated. Single-electron charge transport in ferritin, thus, establishes a route for further characterization of their, e.g., magnetic, properties down to the single-particle level, with prospects for electronic and medical applications.
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Schupp, Felix J. « Single-electron devices in silicon ». Materials Science and Technology 33, no 8 (18 octobre 2016) : 944–62. http://dx.doi.org/10.1080/02670836.2016.1242826.

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Abramov, I. I., et E. G. Novik. « Classification of single-electron devices ». Semiconductors 33, no 11 (novembre 1999) : 1254–59. http://dx.doi.org/10.1134/1.1187860.

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Thèses sur le sujet "Single electron devices"

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Scholze, Andreas. « Simulation of single-electron devices / ». Zürich, 2000. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13526.

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Wasshuber, Christoph. « About single-electron devices and circuits / ». Wien : Österr. Kunst- und Kulturverl, 1998. http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=008183172&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA.

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He, J. « Few-electron transfer devices for single-electron logic applications ». Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.603913.

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Silicon-compatible single-electron circuit architectures may provide a promising solution for the development of very large-scale integrated circuits using nanoscale devices. In these circuits, single-electron charging effects may be used to control the transport of electrons with single-electron precision. Single-electron devices are also inherently small and have low power dissipation. This raises the possibility of very large-scale integrated circuits that combine large integration and low power dissipation. In this work, few-electron transfer devices, for use as the basic element for logic applications, are implemented using nanowire single-electron transistors, in silicon-on-insulator material. A two-way few-electron switch, based on the operation of two bi-directional electron pumps, was fabricated and characterised electrically at 4.2 K. The switch was implemented using three SETs and the circuit was driven by a sine-wave r.f. signal. It was possible to switch few-electron packets ~ 600 electrons in size, using an input gate voltage, from one entry branch into one of two exit branches. Another few-electron transfer device, the ‘universal electron switch’, similar in the general design to the two-way switch, was also fabricated and characterised at 4.2 K. This switch can switch electron packets ~ 10 electrons in size, from any one of three branches to any other branch. These switches may be used for the precise transfer and steering of few-electron packets and as the basic element in few-electron logic applications, such as binary decision diagram logic applications. A radio-frequency single-electron transistor was also developed in silicon-on-insulator material. This device incorporates an SET with an LC resonant circuit and forms a highly-sensitive fast-response electrometer. This device was characterised using 813 MHz microwave at 4.2 K, in order to investigate the high frequency response of an SOI single-electron transistor.
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Pooley, David Martin. « Vertical silicon single-electron devices with silicon nitride tunnel barriers ». Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621302.

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Alkhalil, Feras. « Development of novel fabrication technology for SOI single electron transfer devices ». Thesis, University of Southampton, 2013. https://eprints.soton.ac.uk/360500/.

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This report presents the design, simulation and fabrication of a spin qubit platform on ultrathin SOI (Silicon-on-Insulator) using A1 FinSET (Single electron transistor) gates and Si side gates. A new design layout is proposed for the double spin qubits co-integrated with a single electron electrometer, a waveguide and a nanomagnet. This platform aims to demonstrate the full operation of double spin qubits by integrating the following three key techniques in one compact footprint: a precisely controlled single electron transfer technology, a high speed charge detection technique and a single spin detection technology based on spin to charge conversion. A single electron transfer device (SETD) integrated with an electrometer is introduced here as the main building block of the spin qubit platform. The single electron transfer device consists of three nanowire (MOSETs) connected in series, and is capacitively coupled to an SET electrometer. A unique layout design for the SETD and a novel single electron transfer voltage pulse sequence are introduced. Simulation and dynamic analysis of this device operation are preformed using a finite element capacitance based simulation method and a Monte Carlo based single electron circuit simulation. The simulations demonstrated the ability of this platform to transfer single electrons and these characteristics are analyzed to optimize the layout. A novel fabrication process to realize high density silicon quantum dots (QDs) with A1 FinSET gates and close proximity Si gates on ultrathin SOI, for single electron transfer and detection, is successfully established with a number of different device layouts realized. In these devices, A1 FinSET gates surround an SOI nanowire channel forming electrically tunable potential barriers and defining QDs among them; Si plunger side gates are included to enable precise control of the QDs potential. Five SETD and electrometer device generations have been realized, tested and analyzed to improve the device yield; this extensive process development work is concluded with a novel fabrication approach to demonstrate successful FinSET A1 gae technology for SOI nanowires. This QDs platform is fabricated using a multi-layer electron beam lithography process that is fully compatible with metal oxide semiconductor technology. The fabrication process is fully developed with a yield of 92% and a great flexibility to enable the realization of more complex structures and even for devices beyond the scope of this project as shown in the appendices of this report.
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Carroll, Natalie R. Sohlberg Karl William Dr. « Theoretical descriptions of electron transport through single molecules : developing design tools for molecular electronic devices / ». Philadelphia, Pa. : Drexel University, 2004. http://dspace.library.drexel.edu/handle/1860/330.

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Chu, Rongming. « AlGaN-GaN single- and double-channel high electron mobility transistors / ». View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202004%20CHU.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2004.
Includes bibliographical references (leaves 74-82). Also available in electronic version. Access restricted to campus users.
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Rajagopal, Senthil Arun. « SINGLE MOLECULE ELECTRONICS AND NANOFABRICATION OF MOLECULAR ELECTRONIC DEVICES ». Miami University / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=miami1155330219.

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Nicol, Robert Leiper. « Fabrication and characterization of ultra-small tunnel junctions for single electron devices ». Thesis, University of Glasgow, 1997. http://theses.gla.ac.uk/5365/.

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Work on the fabrication processes has shown that traditional tunnel junction formation techniques result in structure sizes which are too large to provide the high temperature effects required. Where lithographic techniques alone are used to shrink pattern dimensions, the processes become unreliable. In the case of the suspended mask shadow evaporation process used here, a limiting reliable overlap width of 40nm is expected and experienced. Attempts to fabricate structures below this size resulted in unreliable tunnel junction formation. The second technique investigated, the crossed track technique, suffered from serious problems arising from the angled evaporation process and from step coverage difficulties. The third fabrication technique attempts to control the placement of grains within the aluminium film. This technique has the advantages of simplicity and ability to form the smallest tunnel junctions with the material system used here. This system was chosen as the main fabrication process for investigation of high temperature single electron devices in this work. Measurements of resistivity and resistivity temperature dependence of the aluminium films were used to characterize the film types. The temperature dependence and magnitude of the resistivity have shown the films to be very conductive, or metallic. By virtue of this high conductivity, the structure behaviour should be dominated by the device, or tunnel junction, properties. The results obtained from the devices at 4.2K do not show the presence of single electron effects. However, the fabricated structures did demonstrate tunnelling behaviour. The absence of single electron effects has been attributed to the structure sizes. Despite being among the smallest possible in aluminium metallizations, these granular structures are apparently too large. The explanation for this is derived from the presence of stray capacitances between the grains forming the tunnel junctions. This raises the junction capacitance and therefore reduces the charging energy of the junction and the temperature of operation.
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Kleinschmidt, Peter. « Applications of single-electron devices in electrical metrology and far-Infrared detection ». Thesis, Royal Holloway, University of London, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.444545.

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Livres sur le sujet "Single electron devices"

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Scholze, Andreas. Simulation of single-electron devices. Konstanz : Hartung-Gorre, 2000.

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Koch, Hans, et Heinz Lübbig, dir. Single-Electron Tunneling and Mesoscopic Devices. Berlin, Heidelberg : Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-77274-0.

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Single-electron devices and circuits in silicon. London : Imperial College Press, 2010.

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Hans, Koch. Single-Electron Tunneling and Mesoscopic Devices : Proceedings of the 4th International Conference SQUID '91 (Sessions on SET and Mesoscopic Devices), Berlin, Fed. Rep. of Germany, June 18-21, 1991. Berlin, Heidelberg : Springer Berlin Heidelberg, 1992.

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1948-, Koch H., et Lübbig H. 1932-, dir. Single-electron tunneling and mesoscopic devices : Proceedings of the 4th international conference, SQUID '91 (sessions on SET and mesoscopic devices), Berlin, Fed. Rep. of Germany, June 18-21, 1991. Berlin : Springer-Verlag, 1992.

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Burtman, Vladimir. Molecular orbital gap studies in tunneling single molecular devices. Hauppauge, N.Y : Nova Science Publishers, 2011.

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Visscher, Erick H., et Erik Henk Visscher. Technology & Applications of Single-Electron Tunneling Devices. Coronet Books, 1996.

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Koch, H. Single-Electron Tunneling and Mesoscopic Devices : Proceedings of the 4th International Conference, Squid '91 (Sessions on Set and Mesoscopic Devices), (Lecture Notes in Computer Science,). Springer, 1992.

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Hans, Koch, et Ernest B. Vinberg. Single-Electron Tunneling and Mesoscopic Devices : Proceedings of the 4th International Conference SQUID '91 , ... Series in Electronics and Photonics ). Springer, 2011.

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Koch, H. Single Electron Tunneling and Mesoscopic Devices : Proceedings of the 4th International Conference Squid '91 (Springer Series in Electronics and Photonics). Springer, 1992.

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Chapitres de livres sur le sujet "Single electron devices"

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Weis, Jürgen. « Single-Electron Devices ». Dans CFN Lectures on Functional Nanostructures Vol. 1, 87–121. Berlin, Heidelberg : Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-31533-9_5.

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Takahashi, Yasuo, Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi et Hiroshi Inokawa. « Silicon Single-Electron Devices ». Dans Nanostructure Science and Technology, 125–72. Boston, MA : Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-78689-6_5.

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Nakazato, K. « Single Electron Memory Device Simulations ». Dans Simulation of Semiconductor Processes and Devices 1998, 201–2. Vienna : Springer Vienna, 1998. http://dx.doi.org/10.1007/978-3-7091-6827-1_51.

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Sanquer, M., X. Jehl, M. Pierre, B. Roche, M. Vinet et R. Wacquez. « Single Dopant and Single Electron Effects in CMOS Devices ». Dans Semiconductor-On-Insulator Materials for Nanoelectronics Applications, 251–63. Berlin, Heidelberg : Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-15868-1_14.

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Claeson, T., P. Delsing, D. Haviland, L. Kuzmin et K. K. Likharev. « Correlated Single Electron Tunneling In Ultrasmall Junctions ». Dans Nonlinear Superconductive Electronics and Josephson Devices, 197–228. Boston, MA : Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3852-3_16.

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Dzurak, A. S., M. Field, J. E. F. Frost, I. M. Castleton, C. G. Smith, C. T. Liang, M. Pepper, D. A. Ritchie, E. H. Linfield et G. A. C. Jones. « Conductance in Quantum Boxes : Interference and Single Electron Effects ». Dans Quantum Transport in Ultrasmall Devices, 201–16. Boston, MA : Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1967-6_10.

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Barker, John R., et Sharif Babiker. « Quantum Traffic Theory of Single Electron Transport in Nanostructures ». Dans Quantum Transport in Ultrasmall Devices, 217–25. Boston, MA : Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1967-6_11.

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Eaves, L., F. W. Sheard et G. A. Toombs. « The Investigation of Single and Double Barrier (Resonant Tunnelling) Heterostructures Using High Magnetic Fields ». Dans Physics of Quantum Electron Devices, 107–46. Berlin, Heidelberg : Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-74751-9_5.

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Pashkin, Yu A., Y. Nakamura, T. Yamamoto et J. S. Tsai. « Possibility of Single-Electron Devices and Superconducting Coherence ». Dans International Workshop on Superconducting Nano-Electronics Devices, 97–103. Boston, MA : Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0737-6_11.

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Wallisser, C., B. Limbach, P. vom Stein et R. Schäfer. « Single-Electron Transistors in the Regime of High Conductance ». Dans International Workshop on Superconducting Nano-Electronics Devices, 123–32. Boston, MA : Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0737-6_14.

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Actes de conférences sur le sujet "Single electron devices"

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Hadley, P. « Single-electron tunneling devices ». Dans Lectures on superconductivity in networks and mesoscopic systems. AIP, 1998. http://dx.doi.org/10.1063/1.55277.

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Nakazato et White. « Single-electron switch for phase-locked single-electron logic devices ». Dans Proceedings of IEEE International Electron Devices Meeting. IEEE, 1992. http://dx.doi.org/10.1109/iedm.1992.307407.

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Yano, Kazuo, Tomoyuki Ishii, Takashi Hashimoto, Takashi Kobayashi, Fumio Murai et Koichi Seki. « Room-Temperature Single-Electron Devices ». Dans 1994 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1994. http://dx.doi.org/10.7567/ssdm.1994.s-iii-6.

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Allec, Nicholas, Robert Knobel et Li Shang. « Adaptive Simulation for Single-Electron Devices ». Dans 2008 Design, Automation and Test in Europe. IEEE, 2008. http://dx.doi.org/10.1109/date.2008.4484815.

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Allec, Nicholas, Robert Knobel et Li Shang. « Adaptive simulation for single-electron devices ». Dans the conference. New York, New York, USA : ACM Press, 2008. http://dx.doi.org/10.1145/1403375.1403621.

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Nakazato, Kazuo, et Kazuhito Tsukagoshi. « Turnstile Based Single-Electron Logic Devices ». Dans 1997 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1997. http://dx.doi.org/10.7567/ssdm.1997.b-9-2.

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Deyasi, Arpan, et Ritabrata Chakraborty. « Analytical computation of transfer characteristics of single electron transistor ». Dans 2017 Devices for Integrated Circuit (DevIC). IEEE, 2017. http://dx.doi.org/10.1109/devic.2017.8073905.

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« Self-Assembled Quantum Dot Single Electron Devices ». Dans Microprocesses and Nanotechnology '98. 1998 International Microprocesses and Nanotechnology Conference. IEEE, 1998. http://dx.doi.org/10.1109/imnc.1998.730100.

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Takahashi, Y. « Silicon Single-electron Devices for Logic Applications ». Dans 32nd European Solid-State Device Research Conference. IEEE, 2002. http://dx.doi.org/10.1109/essderc.2002.194872.

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Fujiwara, Akira, Gento Yamahata, Katsuhiko Nishiguchi, Gabriel P. Lansbergen et Yukinori Ono. « Silicon single-electron transfer devices : Ultimate control of electric charge ». Dans 2012 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2012. http://dx.doi.org/10.1109/snw.2012.6243336.

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Rapports d'organisations sur le sujet "Single electron devices"

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Averin, D. V. Semiconductor Single-Electron Digital Devices and Circuits. Fort Belvoir, VA : Defense Technical Information Center, juin 1993. http://dx.doi.org/10.21236/ada278338.

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van der Heijden, Joost. Optimizing electron temperature in quantum dot devices. QDevil ApS, mars 2021. http://dx.doi.org/10.53109/ypdh3824.

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The performance and accuracy of quantum electronics is substantially degraded when the temperature of the electrons in the devices is too high. The electron temperature can be reduced with appropriate thermal anchoring and by filtering both the low frequency and radio frequency noise. Ultimately, for high performance filters the electron temperature can approach the phonon temperature (as measured by resistive thermometers) in a dilution refrigerator. In this application note, the method for measuring the electron temperature in a typical quantum electronics device using Coulomb blockade thermometry is described. This technique is applied to find the readily achievable electron temperature in the device when using the QFilter provided by QDevil. With our thermometry measurements, using a single GaAs/AlGaAs quantum dot in an optimized experimental setup, we determined an electron temperature of 28 ± 2 milli-Kelvin for a dilution refrigerator base temperature of 18 milli-Kelvin.
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Koh, Seong J., et Choong-Un Kim. Fabrication of Single Electron Devices within the Framework of CMOS Technology. Fort Belvoir, VA : Defense Technical Information Center, décembre 2008. http://dx.doi.org/10.21236/ada491301.

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Sturm, James C. Operation and Fabrication of Single Electron and Coherent Nanoscale Semiconductor Devices. Fort Belvoir, VA : Defense Technical Information Center, décembre 2004. http://dx.doi.org/10.21236/ada429504.

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Polsky, Ronen. Electrochemical Detection of Single Molecules in Nanogap Electrode Fluidic Devices. Office of Scientific and Technical Information (OSTI), janvier 2018. http://dx.doi.org/10.2172/1494168.

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Pandey, R. K. Growth of Device Quality Bulk Single Crystal of Pb-K-Niobate (PKN) for SAW (Surface Acoustic Wave)-Devices and Electro-Optical Applications. Fort Belvoir, VA : Defense Technical Information Center, décembre 1985. http://dx.doi.org/10.21236/ada179716.

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Valishev, Alexander. The Effect of Electron Lens as Landau Damping Device on Single Particle Dynamics in HL-LHC. Office of Scientific and Technical Information (OSTI), juillet 2017. http://dx.doi.org/10.2172/1480123.

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Smit, Amelia, Kate Dunlop, Nehal Singh, Diona Damian, Kylie Vuong et Anne Cust. Primary prevention of skin cancer in primary care settings. The Sax Institute, août 2022. http://dx.doi.org/10.57022/qpsm1481.

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Overview Skin cancer prevention is a component of the new Cancer Plan 2022–27, which guides the work of the Cancer Institute NSW. To lessen the impact of skin cancer on the community, the Cancer Institute NSW works closely with the NSW Skin Cancer Prevention Advisory Committee, comprising governmental and non-governmental organisation representatives, to develop and implement the NSW Skin Cancer Prevention Strategy. Primary Health Networks and primary care providers are seen as important stakeholders in this work. To guide improvements in skin cancer prevention and inform the development of the next NSW Skin Cancer Prevention Strategy, an up-to-date review of the evidence on the effectiveness and feasibility of skin cancer prevention activities in primary care is required. A research team led by the Daffodil Centre, a joint venture between the University of Sydney and Cancer Council NSW, was contracted to undertake an Evidence Check review to address the questions below. Evidence Check questions This Evidence Check aimed to address the following questions: Question 1: What skin cancer primary prevention activities can be effectively administered in primary care settings? As part of this, identify the key components of such messages, strategies, programs or initiatives that have been effectively implemented and their feasibility in the NSW/Australian context. Question 2: What are the main barriers and enablers for primary care providers in delivering skin cancer primary prevention activities within their setting? Summary of methods The research team conducted a detailed analysis of the published and grey literature, based on a comprehensive search. We developed the search strategy in consultation with a medical librarian at the University of Sydney and the Cancer Institute NSW team, and implemented it across the databases Embase, MEDLINE, PsycInfo, Scopus, Cochrane Central and CINAHL. Results were exported and uploaded to Covidence for screening and further selection. The search strategy was designed according to the SPIDER tool for Qualitative and Mixed-Methods Evidence Synthesis, which is a systematic strategy for searching qualitative and mixed-methods research studies. The SPIDER tool facilitates rigour in research by defining key elements of non-quantitative research questions. We included peer-reviewed and grey literature that included skin cancer primary prevention strategies/ interventions/ techniques/ programs within primary care settings, e.g. involving general practitioners and primary care nurses. The literature was limited to publications since 2014, and for studies or programs conducted in Australia, the UK, New Zealand, Canada, Ireland, Western Europe and Scandinavia. We also included relevant systematic reviews and evidence syntheses based on a range of international evidence where also relevant to the Australian context. To address Question 1, about the effectiveness of skin cancer prevention activities in primary care settings, we summarised findings from the Evidence Check according to different skin cancer prevention activities. To address Question 2, about the barriers and enablers of skin cancer prevention activities in primary care settings, we summarised findings according to the Consolidated Framework for Implementation Research (CFIR). The CFIR is a framework for identifying important implementation considerations for novel interventions in healthcare settings and provides a practical guide for systematically assessing potential barriers and facilitators in preparation for implementing a new activity or program. We assessed study quality using the National Health and Medical Research Council (NHMRC) levels of evidence. Key findings We identified 25 peer-reviewed journal articles that met the eligibility criteria and we included these in the Evidence Check. Eight of the studies were conducted in Australia, six in the UK, and the others elsewhere (mainly other European countries). In addition, the grey literature search identified four relevant guidelines, 12 education/training resources, two Cancer Care pathways, two position statements, three reports and five other resources that we included in the Evidence Check. Question 1 (related to effectiveness) We categorised the studies into different types of skin cancer prevention activities: behavioural counselling (n=3); risk assessment and delivering risk-tailored information (n=10); new technologies for early detection and accompanying prevention advice (n=4); and education and training programs for general practitioners (GPs) and primary care nurses regarding skin cancer prevention (n=3). There was good evidence that behavioural counselling interventions can result in a small improvement in sun protection behaviours among adults with fair skin types (defined as ivory or pale skin, light hair and eye colour, freckles, or those who sunburn easily), which would include the majority of Australians. It was found that clinicians play an important role in counselling patients about sun-protective behaviours, and recommended tailoring messages to the age and demographics of target groups (e.g. high-risk groups) to have maximal influence on behaviours. Several web-based melanoma risk prediction tools are now available in Australia, mainly designed for health professionals to identify patients’ risk of a new or subsequent primary melanoma and guide discussions with patients about primary prevention and early detection. Intervention studies have demonstrated that use of these melanoma risk prediction tools is feasible and acceptable to participants in primary care settings, and there is some evidence, including from Australian studies, that using these risk prediction tools to tailor primary prevention and early detection messages can improve sun-related behaviours. Some studies examined novel technologies, such as apps, to support early detection through skin examinations, including a very limited focus on the provision of preventive advice. These novel technologies are still largely in the research domain rather than recommended for routine use but provide a potential future opportunity to incorporate more primary prevention tailored advice. There are a number of online short courses available for primary healthcare professionals specifically focusing on skin cancer prevention. Most education and training programs for GPs and primary care nurses in the field of skin cancer focus on treatment and early detection, though some programs have specifically incorporated primary prevention education and training. A notable example is the Dermoscopy for Victorian General Practice Program, in which 93% of participating GPs reported that they had increased preventive information provided to high-risk patients and during skin examinations. Question 2 (related to barriers and enablers) Key enablers of performing skin cancer prevention activities in primary care settings included: • Easy access and availability of guidelines and point-of-care tools and resources • A fit with existing workflows and systems, so there is minimal disruption to flow of care • Easy-to-understand patient information • Using the waiting room for collection of risk assessment information on an electronic device such as an iPad/tablet where possible • Pairing with early detection activities • Sharing of successful programs across jurisdictions. Key barriers to performing skin cancer prevention activities in primary care settings included: • Unclear requirements and lack of confidence (self-efficacy) about prevention counselling • Limited availability of GP services especially in regional and remote areas • Competing demands, low priority, lack of time • Lack of incentives.
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