Littérature scientifique sur le sujet « Single Crystalline Oxides »
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Articles de revues sur le sujet "Single Crystalline Oxides"
Kim, Shin-Ik, Hyung-Jin Choi, Gwangyeob Lee, Chang Jae Roh, Inki Jung, Soo Young Jung, Ruiguang Ning et al. « 3D architectures of single-crystalline complex oxides ». Materials Horizons 7, no 6 (2020) : 1552–57. http://dx.doi.org/10.1039/d0mh00292e.
Texte intégralPeng, Bin, Ren-Ci Peng, Yong-Qiang Zhang, Guohua Dong, Ziyao Zhou, Yuqing Zhou, Tao Li et al. « Phase transition enhanced superior elasticity in freestanding single-crystalline multiferroic BiFeO3 membranes ». Science Advances 6, no 34 (août 2020) : eaba5847. http://dx.doi.org/10.1126/sciadv.aba5847.
Texte intégralGlätzle, Matthias, Gregor J. Hoerder et Hubert Huppertz. « RE2B8O15 (RE = La, Pr, Nd) – syntheses of three new rare earth borates isotypic to Ce2B8O15 ». Zeitschrift für Naturforschung B 71, no 5 (1 mai 2016) : 535–42. http://dx.doi.org/10.1515/znb-2016-0027.
Texte intégralYeom, Eun Joo, Seong Sik Shin, Woon Seok Yang, Seon Joo Lee, Wenping Yin, Dasom Kim, Jun Hong Noh, Tae Kyu Ahn et Sang Il Seok. « Controllable synthesis of single crystalline Sn-based oxides and their application in perovskite solar cells ». Journal of Materials Chemistry A 5, no 1 (2017) : 79–86. http://dx.doi.org/10.1039/c6ta08565b.
Texte intégralPopescu, Madalina, Roxana Piticescu, Eugeniu Vasile, Dragos Taloi, Mirela Petriceanu, Maria Stoiciu et Viorel Badilita. « The Influence of Synthesis Parameters on FeO(OH) / Fe2O3 Formation by Hydrothermal Techniques ». Zeitschrift für Naturforschung B 65, no 8 (1 août 2010) : 1024–32. http://dx.doi.org/10.1515/znb-2010-0808.
Texte intégralLiu, Qing, Youwei Yan, Xiangcheng Chu, Yiling Zhang, Lihong Xue et Wuxing Zhang. « Graphene-induced growth of single crystalline Sb2MoO6sheets and their sodium storage performance ». J. Mater. Chem. A 5, no 40 (2017) : 21328–33. http://dx.doi.org/10.1039/c7ta07111f.
Texte intégralChayasombat, Bralee, N. Tarumi, T. Kato, Tsukasa Hirayama, Katsuhiro Sasaki et Kotaro Kuroda. « Transmission Electron Microscopy Studies of Oxidation of Single Crystal Silicon Carbide at High Temperature ». Materials Science Forum 561-565 (octobre 2007) : 2135–38. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.2135.
Texte intégralQIAN, H. X., W. ZHOU et H. Y. ZHENG. « RIPPLE FORMATION ON InP SURFACE IRRADIATED WITH FEMTOSECOND LASER ». International Journal of Nanoscience 04, no 04 (août 2005) : 779–84. http://dx.doi.org/10.1142/s0219581x0500370x.
Texte intégralFomenko, V. S. « Electronic work function of sintered and single-crystalline high-temperature superconducting oxides ». Powder Metallurgy and Metal Ceramics 32, no 2 (février 1993) : 178–81. http://dx.doi.org/10.1007/bf00560050.
Texte intégralUhrmacher, Michael, et Klaus-Peter Lieb. « Phase Transitions in Oxides Studied by Perturbed Angular Correlation Spectroscopy ». Zeitschrift für Naturforschung A 55, no 1-2 (1 février 2000) : 90–104. http://dx.doi.org/10.1515/zna-2000-1-217.
Texte intégralThèses sur le sujet "Single Crystalline Oxides"
Kokkaliaris, Stylianos. « Investigation of the vortex phase diagram and dynamics in single crystalline samples of the high temperature superconductor YBaâ†2Cuâ†3Oâ†7â†-â†#delta# ». Thesis, University of Southampton, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.310294.
Texte intégralRoso, Casares Sergio. « Synthesis and gas sensing properties of single crystalline metal-oxide nanostructures ». Doctoral thesis, Universitat Rovira i Virgili, 2017. http://hdl.handle.net/10803/402468.
Texte intégralEn la presente tesis doctoral, se han producido diferentes tipos de nanoestructuras basadas en oxidos metalicos, como por ejemplo nanohilos de ZnO y ocaedros de In2O3, utilizando el método de Deposición Química de Vapor (CVD) a altas temperaturas. Para la detección de dióxido de nitrógeno, se ha descubierto que la respuesta de los nanohilos de ZnO está directamente correlacionada con la cantidad total de defectos presentes en el material. Cuanto mayor es el número de defectos, mayor es la respuesta al dióxido de nitrógeno. Sin embargo, para la detección de etanol, la muestra que contenía un número medio de defectos fue la que dio mejores resultados. Por lo que respecta a los octaedros de In2O3, podemos decir que los octaedros de In2O3 puro son excelentes candidatos para la detección de NO2, ya que poseen una excelente sensibilidad (0.43 ppb-1) a bajas temperaturas (130ºC), mientras que la respuesta a otros gases como H2 es dos órdenes de magnitud inferior en las mismas condiciones. Además, en presencia de humedad, se incrementa la sensibilidad a NO2 y, a la vez, se reduce la sensibilidad a H2, por lo que la selectividad hacia NO2 tambien se ve incrementada. Finalmente, utilizando la espectroscopia DRIFT, se ha analizado el In2O3 expuesto a 1 ppm de NO2 a diferentes temperaturas y se ha descubierto que el mecanismo propuesto para describir el proceso de senado es bastante más complicado que lo que se ha publicado hasta ahora. Como resultado de todos estos experimentos, se ha arrojado luz nueva sobre los mecanismos de sensado de los nanohilos de ZnO y los octahedros de In2O3 a diferentes temperaturas.
In the present doctoral thesis, several metal oxide nanostructures such as ZnO nanowires and In2O3 octahedra via a chemical vapour deposition (CVD) method at high temperatures. For the detection of nitrogen dioxide, it was found that the response of ZnO nanowires was directly correlated to the overall amount of defects of the material. The higher the number of defects is, the higher the response to nitrogen dioxide is. On the other hand, for the detection of ethanol, ZnO nanowires with an intermediate number of defects in which surface defects were dominant led to the best results. Additionally, regarding the In2O3 octahedra, we can say that pure In2O3 octahedra are excellent for detecting NO2 gas with an outstanding sensitivity (0.43 ppb-1) at low temperatures (130ºC), while the response to H2 remains two orders of magnitude lower under the same conditions. In addition, the presence of humidity increases the sensitivity to NO2 and, at the same time, reduces the response to H2, which results in an increased selectivity. Finally, by making use of the DRIFT spectroscopy, we have analyzed In2O3 material towards 1 ppm of NO2 at different temperatures and, it has been found that the mechanism proposed for the gas sensing is far more complicated than previously reported. As a result of these experiments, new light on the sensing mechanism of ZnO and In2O3 material towards NO2 gas at different temperatures has been shed.
Pooley, Kathryn Jessica. « Patterned Aqueous Growth of Single Crystalline Zinc Oxide for Photonic Applications ». Thesis, Harvard University, 2015. http://nrs.harvard.edu/urn-3:HUL.InstRepos:17467362.
Texte intégralEngineering and Applied Sciences - Applied Physics
Asif, Ali [Verfasser], et Joachim [Akademischer Betreuer] Burghartz. « Laterally diffused metal oxide semiconductor transistors on ultra-thin single-crystalline silicon / Ali Asif. Betreuer : Joachim Burghartz ». Stuttgart : Universitätsbibliothek der Universität Stuttgart, 2011. http://d-nb.info/1016459262/34.
Texte intégralKim, Junseok. « Improved Properties of Poly (Lactic Acid) with Incorporation of Carbon Hybrid Nanostructure ». Thesis, Virginia Tech, 2016. http://hdl.handle.net/10919/81415.
Texte intégralMaster of Science
Fanchon, Eric. « Etude structurale de conducteurs ioniques unidimensionnels de type hollandite ». Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37604938h.
Texte intégralHung, Wei-Jie, et 洪偉傑. « Fabrication of Transparent Conductive Oxides for Single-Crystalline n-type Silicon Hetero-Junction Solar Cells ». Thesis, 2010. http://ndltd.ncl.edu.tw/handle/50732695248536570600.
Texte intégral華梵大學
機電工程學系博碩專班
98
This paper is aimed to improve the efficiencies of silicon solar cell using semiconductor fabrication technologies. The research first adopts n-type (100) silicon wafers as substrates, and applies KOH etching in the photolithography process to form inverted pyramid structures. The density of the inverse pyramid structures is varied to investigate its impact factor on the reflectivity for the solar cells. In addition, the paper performs high-density plasma chemical vapor deposition to fabricate amorphous silicon thin films. Then, the author can study solar cells performances with single crystal / hydrogenised amorphous silicon heterojunctions, the effects of p-type amorphous silicon films deposited over p-type single crystal films, as well as the influences from p-type amorphous silicon layers and intrinsic layers. Also, the research executes ion implantation to fabricate BSF layers, which are intended to decrease the carrier recombination rate within the interfacing regions, and to improve the minority carrier collection rates. Furthermore, this research employes RF sputtering system to fabricate AZO transparent conductive thin films, and then learns the effects of adjusted processing parameters to the electrical and optical film properties. In the end, hydrogen plasma is used to perform the film post-processing, and the conductive films are then utilized as solar cell electrodes. After using a semiconductor parameter analyzer to perform a series of experimental measurements, the obtained IV curves suggest that the prototyped solar cells can obtain an open circuit voltage Voc = 0.60V, a short circuit current Jsc = 30mA/cm2, a fill factor FF of 62.08%, and an actual efficiency is about 11.13%.
Chen, Peng-Yu, et 陳鵬宇. « Aluminum oxide layer prepared by plasma oxidation on single-crystalline aluminum film ». Thesis, 2016. http://ndltd.ncl.edu.tw/handle/q3e939.
Texte intégral國立交通大學
電子研究所
105
In this thesis¸ the plasma oxidation on single-crystalline Aluminum is presented. The dependence of oxidation rates on the N2O flux, the substrate temperature, the RF power, and the chamber pressure is studied with Auger Electron Spectroscopy (AES) , Transmission Electron Microscope (TEM) and Atomic Force Microscope (AFM). The dependence of oxide thickness and oxidation time is plotted, and also compared to the mathematic model in thermal oxidation. In this thesis, the Al2O3 is applied to gate oxide in GaAs MOSFET. The I-V characteristic of MOSFET is studied, and the interface quality is checked by X-ray Photoelectron Spectroscopy (XPS). Our work provides another way to prepare a smooth nano-scale Al2O3 film on aluminum, and we are hoping that this fabrication process of plasma oxidation will be improved in future.
Lin, Yu-Jing, et 林妤靜. « Analysis on Compound Slurry with Graphene Oxide for Chemical Mechanical Polishing of Single Crystalline Silicon Carbide Wafer ». Thesis, 2019. http://ndltd.ncl.edu.tw/handle/f2ym7b.
Texte intégral國立臺灣科技大學
機械工程系
107
Single Crystalline Silicon Carbide (SiC) Wafer has high and wide voltage, high breakdown voltage, and high thermal conductivity properties in high power devices. However, it has a very high Mohs hardness 9.2 and brittle substrate, which is a time-consuming process in the traditional chemical mechanical polishing (CMP). A 30 minutes dipping test was performed on 4H-SiC with different base slurry, and 0.1 wt% GO powder add in C -face produce COOH and C-O-OH bonds, while Si-face had no obvious reaction by Raman spectroscopy. This study aims to improve the process time by Compound-Slurry Chemical Mechanical Polishing (CSCMP) add 0.1 wt% graphene oxide (GO) and Gas Liquid Assisted Chemical Mechanical Polishing (GLA-CMP). The process contains OH and COOH bonding to form a soft passivation layer on 4H-SiC wafer surface in the slurry. Four kinds of polishing processes for C-face and Si-face of SiC wafer with the same parameters. It can achieve the best material removal rate (MRR) is 1289.91 nm/ h on C-face and the best MRR is 267.72 nm/h on Si-face by the HS+GLACMP process. Comparision of CMP and CS+GLACMP, it reduces 60.6% processing time on C-face and reduce 39.5 % processing time on Si-face after single side lapping and reduce processing time.
Chen, Qiu-Feng, et 陳秋峰. « Modelings and characterizations of thermal oxide films grown on single crystalline/ polycrystalline silicon and their applications in FLOTOX EEPROM device design ». Thesis, 1986. http://ndltd.ncl.edu.tw/handle/97724946981133596561.
Texte intégralChapitres de livres sur le sujet "Single Crystalline Oxides"
Mihama, K., et N. Tanaka. « Nm-sized crystallites embedded in single crystalline films of magnesium oxide ». Dans Small Particles and Inorganic Clusters, 157–60. Berlin, Heidelberg : Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74913-1_36.
Texte intégralKasar, Chetan, Ulhas Sonawane, Prasantha Mudimela, Jean-Francois Colomer et D. S. Patil. « Single Crystalline Films of Zinc Oxide for Nanorod Applications ». Dans Physics of Semiconductor Devices, 775–77. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_199.
Texte intégralYamada, Yasuji, Junichi Kawashima, Yusuke Niiori, Tamaki Masegi et Izumi Hirabayashi. « Liquid Phase Epitaxy of YBCO on Single-Crystalline Oxide Fibers for Power Application ». Dans Advances in Superconductivity IX, 653–55. Tokyo : Springer Japan, 1997. http://dx.doi.org/10.1007/978-4-431-68473-2_1.
Texte intégralOrlandi, M. O., P. H. Suman, R. A. Silva et E. P. S. Arlindo. « Carbothermal Reduction Synthesis : An Alternative Approach to Obtain Single-Crystalline Metal Oxide Nanostructures ». Dans Recent Advances in Complex Functional Materials, 43–67. Cham : Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-53898-3_2.
Texte intégralKawaguchi, Kenichi, Iwao Tago et Masao Nakao. « Distribution of Pinning Energies in Oxide Superconducting Thin Films and Single-Crystalline Powders ». Dans Advances in Superconductivity III, 491–94. Tokyo : Springer Japan, 1991. http://dx.doi.org/10.1007/978-4-431-68141-0_108.
Texte intégralHasegawa, Masato, Yutaka Yoshida, Yoshiaki Ito, Morihiro Iwata, Junichi Kawashima, Yoshiaki Takai et Izumi Hirabayashi. « Preparation of YBa2Cu3O7-δ -Coated Conductor on Single Crystalline Oxide Fiber by Hot-Wall MOCVD ». Dans Advances in Superconductivity X, 623–26. Tokyo : Springer Japan, 1998. http://dx.doi.org/10.1007/978-4-431-66879-4_146.
Texte intégralBogomol, Iurii, et Petro Loboda. « Directionally Solidified Ceramic Eutectics for High-Temperature Applications ». Dans MAX Phases and Ultra-High Temperature Ceramics for Extreme Environments, 303–22. IGI Global, 2013. http://dx.doi.org/10.4018/978-1-4666-4066-5.ch010.
Texte intégralDispinar, Derya. « Melt Quality Assessment ». Dans Encyclopedia of Aluminum and Its Alloys. Boca Raton : CRC Press, 2019. http://dx.doi.org/10.1201/9781351045636-120052503.
Texte intégralChoudhary, Sumitra, Vikas Sharma, Abhishek Sharma, Ajay Kumar et Parveen Kumar. « Analyzing the Properties of Zinc Oxide (ZnO) Thin Film Grown on Silicon (Si) Substrate, ZnO/Si Using RF Magnetron Sputtering Approach ». Dans Modeling, Characterization, and Processing of Smart Materials, 297–308. IGI Global, 2023. http://dx.doi.org/10.4018/978-1-6684-9224-6.ch014.
Texte intégralAriyanti, Dessy, Aprilina Purbasari, Dina Lesdantina, Filicia Wicaksana et Wei Gao. « Modified TiO2 Nanomaterials as Photocatalysts for Environmental Applications ». Dans Food Sustainability, Environmental Awareness, and Adaptation and Mitigation Strategies for Developing Countries, 103–17. IGI Global, 2023. http://dx.doi.org/10.4018/978-1-6684-5629-3.ch006.
Texte intégralActes de conférences sur le sujet "Single Crystalline Oxides"
Aloy, A. S., R. A. Soshnikov, D. B. Lopukh, D. F. Bickford, C. C. Herman, E. W. Holtzsheiter et R. W. Goles. « Vitrification of DOE Simulated Radioactive Waste by Induction-Heated Cold-Crucible Melter Technology ». Dans ASME 2003 9th International Conference on Radioactive Waste Management and Environmental Remediation. ASMEDC, 2003. http://dx.doi.org/10.1115/icem2003-4907.
Texte intégralHershberger, Jeff, Oyelayo O. Ajayi, Cinta Lorenzo-Martin, Jules L. Routbort et George R. Fenske. « X-Ray Diagnostics for Scuffing : Application to Phase Transformation in Nickel ». Dans World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63904.
Texte intégralBilski, P., A. Twardak, Y. Zorenko, T. Zorenko, V. Gorbenko, E. Mandowska, A. Mandowski et O. Sidletskiy. « TSL properties of A2SiO5 and A2SiO5:Ce (A=Y, Lu) single crystals and single crystalline films ». Dans 2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). IEEE, 2012. http://dx.doi.org/10.1109/omee.2012.6464740.
Texte intégralComini, Elisabetta, Camilla Baratto, Guido Faglia, Matteo Ferroni, Alberto Vomiero et Giorgio Sberveglieri. « Highly sensitive single crystalline metal oxide nanowires gas sensors ». Dans 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. IEEE, 2006. http://dx.doi.org/10.1109/commad.2006.4429946.
Texte intégralZorenko, Yu, V. Gorbenko, T. Zorenko, Ya Vasylkiv, K. Fabisiak, H. Wrzesinski, M. Nikl et al. « Growth and luminescent properties of (Tb,Gd)3Al5O12:Ce single crystalline films ». Dans 2014 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). IEEE, 2014. http://dx.doi.org/10.1109/omee.2014.6912383.
Texte intégralZorenko, Yu, V. Gorbenko, T. Zorenko, V. Savchyn et A. Voloshinovskii. « Luminescent and scintillation properties of CaWO4 and CaWO4:Bi single crystalline films ». Dans 2014 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). IEEE, 2014. http://dx.doi.org/10.1109/omee.2014.6912438.
Texte intégralZorenko, Yu, V. Gorbenko, T. Zorenko, M. Nikl, J. Mares, A. Beitlerova, A. Fedorov et O. Sidletskiy. « Scintillating screens based on the single crystalline films of orthosilicates and multicomponent garnets ». Dans 2014 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). IEEE, 2014. http://dx.doi.org/10.1109/omee.2014.6912432.
Texte intégralLlobet, E., E. Navarrete, F. E. Annanouch, M. Alvarado, E. Gonzalez, J. L. Ramirez, A. Romero et al. « Single-Crystalline Metal Oxide, Resistive Gas Sensors Advances and Perspectives ». Dans 2018 IEEE Sensors. IEEE, 2018. http://dx.doi.org/10.1109/icsens.2018.8589734.
Texte intégralYang, Yefeng, Yizheng Jin, Zhizhen Ye, Yao Tu et Qinglmg Wang. « Synthesis and characterization of ultrathin single-crystalline cerium oxide nanorods ». Dans 2010 IEEE 3rd International Nanoelectronics Conference (INEC). IEEE, 2010. http://dx.doi.org/10.1109/inec.2010.5425007.
Texte intégralBudak, S., G. Miao et A. Gupta. « Growth of CrO2 coated single crystalline (SnO2) tin oxide nanowires ». Dans IEEE Southeastcon 2009 (SOUTHEASTCON). IEEE, 2009. http://dx.doi.org/10.1109/secon.2009.5174081.
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