Littérature scientifique sur le sujet « Silicon Based Nanostructure »
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Articles de revues sur le sujet "Silicon Based Nanostructure"
Yang, Xiaoyu, Ling Tong, Lin Wu, Baoguo Zhang, Zhiyuan Liao, Ao Chen, Yilai Zhou, Ying Liu et Ya Hu. « Research progress of carbon-assisted etching of silicon nanostructures ». Journal of Physics : Conference Series 2076, no 1 (1 novembre 2021) : 012060. http://dx.doi.org/10.1088/1742-6596/2076/1/012060.
Texte intégralHe, Minghao, Mingzhao Li et Zeyu Sun. « The Development of Si Anode Materials by Nanotechnology for Lithium-ion Battery ». E3S Web of Conferences 308 (2021) : 01007. http://dx.doi.org/10.1051/e3sconf/202130801007.
Texte intégralBhalla, Nikhil, Aditya Jain, Yoonjoo Lee, Amy Q. Shen et Doojin Lee. « Dewetting Metal Nanofilms—Effect of Substrate on Refractive Index Sensitivity of Nanoplasmonic Gold ». Nanomaterials 9, no 11 (27 octobre 2019) : 1530. http://dx.doi.org/10.3390/nano9111530.
Texte intégralMo, Chen, Jingbo Liu, Dongshan Wei, Honglei Wu, Qiye Wen et Dongxiong Ling. « An Optically Tunable THz Modulator Based on Nanostructures of Silicon Substrates ». Sensors 20, no 8 (13 avril 2020) : 2198. http://dx.doi.org/10.3390/s20082198.
Texte intégralGaleotti, Francesco, Franco Trespidi et Mariacecilia Pasini. « Breath Figure-Assisted Fabrication of Nanostructured Coating on Silicon Surface and Evaluation of Its Antireflection Power ». Journal of Nanomaterials 2016 (2016) : 1–8. http://dx.doi.org/10.1155/2016/3502310.
Texte intégralWallace, Steaphan M., Thiyagu Subramani, Wipakorn Jevasuwan et Naoki Fukata. « Conversion of Amorphous Carbon on Silicon Nanostructures into Similar Shaped Semi-Crystalline Graphene Sheets ». Journal of Nanoscience and Nanotechnology 21, no 9 (1 septembre 2021) : 4949–54. http://dx.doi.org/10.1166/jnn.2021.19329.
Texte intégralGupta, N., G. F. Alapatt, R. Podila, R. Singh et K. F. Poole. « Prospects of Nanostructure-Based Solar Cells for Manufacturing Future Generations of Photovoltaic Modules ». International Journal of Photoenergy 2009 (2009) : 1–13. http://dx.doi.org/10.1155/2009/154059.
Texte intégralBAI, J., et X. C. ZENG. « SILICON-BASED HALF-METAL : METAL-ENCAPSULATED SILICON NANOTUBE ». Nano 02, no 02 (avril 2007) : 109–14. http://dx.doi.org/10.1142/s179329200700043x.
Texte intégralAzmi, M. Safwan, Sharipah Nadzirah et Uda Hashim. « Fabrication of Nanostructure-Based Copper Oxide Biosensor ». Advanced Materials Research 1109 (juin 2015) : 376–80. http://dx.doi.org/10.4028/www.scientific.net/amr.1109.376.
Texte intégralAl-AJILI, ADWAN. « CONTINUOUS-WAVE PHOTOLUMINESCENCE AND NANOSTRUCTURAL PROPERTIES OF POROUS SILICON ». International Journal of Nanoscience 08, no 03 (juin 2009) : 311–18. http://dx.doi.org/10.1142/s0219581x09006079.
Texte intégralThèses sur le sujet "Silicon Based Nanostructure"
Ruminski, Anne Marie. « Manipulation of surface chemistry and nanostructure in porous silicon-based chemical sensors ». Diss., [La Jolla] : University of California, San Diego, 2009. http://wwwlib.umi.com/cr/ucsd/fullcit?p3373085.
Texte intégralTitle from first page of PDF file (viewed October 22, 2009). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references (p. 194-210).
Ozdemir, Serdar. « Formation, characterization and flow dynamics of nanostructure modified sensitive and selective gas sensors based on porous silicon ». Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/39541.
Texte intégralSeo, Michael. « Plasma-assisted nanofabrication of vertical graphene- and silicon-based nanomaterials and their applications ». Thesis, The University of Sydney, 2014. http://hdl.handle.net/2123/12285.
Texte intégralBerencén, Ramírez Yonder Antonio. « Rare earth- and Si nanostructure-based light emitting devices for integrated photonics ». Doctoral thesis, Universitat de Barcelona, 2014. http://hdl.handle.net/10803/285453.
Texte intégralEsta tesis presenta un trabajo experimental en el desarrollo de iones de tierras raras y nanoestructuras de Si como plataforma de materiales para dispositivos de emisión de luz (LEDs) en el rango visible e infrarrojo cercano. Se han fabricado diferentes dispositivos electroluminiscentes basados en capas simples, dobles o triples de óxido de silicio y/o nitruro de silicio dopados o no con tierras raras. Para ello se han empleado varias técnicas de fabricación compatibles con la tecnología CMOS; a saber, depósito de vapor químico asistido por plasma (PECVD), pulverización catódica mediante magnetrón, depósito de vapor químico a baja presión (LPCVD) e implantación de iones. Así mismo, las propiedades estructurales y de composición de las capas fabricadas han sido determinadas mediante el uso de técnicas de caracterización tales como TOF-SIMS, SIMS, XPS, EFTEM, FIB y elipsometría. Además, a temperatura ambiente y altas temperaturas (25 0C – 300 0C) se han estudiado las propiedades electro-ópticas en los regímenes cuasi-estático y dinámico. Por lo general, las técnicas electro-ópticas empleadas fueron corriente-voltaje, capacitancia-voltaje, estudio de carga hasta la ruptura, electroluminiscencia (EL)-corriente, EL-voltaje y EL resuelta en tiempo.
Jaffal, Ali. « Single photon sources emitting in the telecom band based on III-V nanowires monolithically grown on silicon ». Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI019.
Texte intégralA telecom band single photon source (SPS) monolithically grown on silicon (Si) substrate is the Holy Grail to realize CMOS compatible devices for optical-based information technologies. To reach this goal, we propose the monolithic growth of InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) method. In the beginning, we have focused our efforts on optimizing the growth conditions aiming at achieving ultra-low NWs density without any pre-growth or post-growth efforts allowing us to optically excite a single QD-NW on the as-grown sample and to preserve the monolithic growth on silicon. Subsequently, we have turned our attention on enhancing the InAs QD light extraction from the InP NW waveguide towards the free space to achieve a bright source with a Gaussian far-field (FF) emission profile to efficiently couple the single photons to a single-mode optical fiber. This was done by controlling the NW geometry to obtain needlelike-tapered NWs with a very small taper angle and a NW diameter tailored to support a single mode waveguide. Such a geometry was successfully produced using a temperature-induced balance over axial and radial growths during the gold-catalyzed growth of the NWs. Optical measurements have confirmed the single photon nature of the emitted photons with g2(0) = 0.05 and a Gaussian FF emission profile with an emission angle θ = 30°. For optimal device performances, we have then tackled a crucial issue in such NW geometry represented by the unknown polarization state of the emitted photons. To solve this issue, one solution is to embed a single QD in a NW with an asymmetrical cross-section optimized to inhibit one polarization state and to improve the emission efficiency of the other one. An original growth strategy was proposed permitting us to obtain highly linearly polarized photons along the elongated axis of the asymmetrical NWs. Finally, the encapsulation of the QD-NWs within amorphous silicon (a-Si) waveguides have opened the path to produce fully integrated SPSs devices on Si in the near future
Guzman-Verri, Gian Giacomo. « Electronic Properties of Silicon-based Nanostructures ». Wright State University / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=wright1158515644.
Texte intégralLalic, Nenad. « Light emitting devices based on silicon nanostructures ». Doctoral thesis, KTH, Electronic Systems Design, 2000. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-2943.
Texte intégralAlthough silicon is the dominant semiconductor today, lightemitting devices are currently based on compound semiconductorsdue to their direct band-gap, which promotes fast radiativerecombination. However, in nanometer-size silicon structures,carrier confinement enhances the radiative recombination,while, at the same time, suppresses diffusion to non-radiativerecombination centra, resulting in a significant increase inlight emission efficiency. Moreover, the band-gap is wideningas the crystal size is reduced (quantum confinement), enablinglight emission in the visible range. In this work, twodifferent approaches to manufacture a light emitting diode(LED) in silicon have been investigated. The first type ofsilicon LED's is based on porous silicon (PSi) and manufacturedby electrochemical etching of a previously formed pn diodestructure. After optimizing the etching process, PSi LED's wereproduced with an external quantum efficiency of ~0.2% underpulsed excitation, more than an order of magnitude higher thanpreviously reported. Tunability of the emission wavelength inthe range 1.6-2eV was demonstrated by varying the etchingparameters. The EL wavelength is determined by the band-gap ofthe nanocrystals, i. e. their size, as evidenced by a lowerthreshold for longer EL wavelengths, due to lower barriers forinjection into larger crystallites. The EL decay after the biaspulse follows a stretched exponential shape, in agreement witha model involving exciton migration in partially interconnectednanocrystals. Under constant bias, the EL and forward currentare decreasing, due to charging, caused by carrier trapping inthe porous network. After the etching the hydrogen passivatedporous silicon surface is being gradually oxidized, resultingin increased barriers, permanent conductivity reduction and ELdegradation. To improve stability, the second LED approach,based on Si nanocrystals embedded in SiO2, was studied. Nanocrystals were formed by theimplantation of Si into thermally grown SiO2and by subsequent annealing at high temperatures(mostly 1100°C). Photoluminescence investigation showedthat luminescence properties are dependent on nanocrystal sizeand similar to those of PSi. However, decay shapes and timeconstants revealed a stronger isolation of the nanocrystalsthan in PSi. For the EL, good current transport properties werenecessary. That required a thin SiO2layer and efficient injection, realized using anin-situ doped poly-Si cap layer. The Si nanocrystal LED's werestable, although the total light intensity was lower than inPSi, as a consequence of a thin active layer.
Key words: Electroluminescence, photoluminescence, lightemitting diode, porous materials, nanostructured materials,silicon, etching, anodized layers, ion implantation.
Chau, Chien Fat. « A nanostructured porous silicon based drug delivery device ». Thesis, University of Southampton, 2009. https://eprints.soton.ac.uk/69237/.
Texte intégralDohnalovà, Kater̆ina. « Study of optical amplification in silicon based nanostructures ». Université Louis Pasteur (Strasbourg) (1971-2008), 2007. https://publication-theses.unistra.fr/public/theses_doctorat/2007/DOHNALOVA_Katerina_2007.pdf.
Texte intégralThe aim of this work was to prepare light-emitting structure on the basis of silicon nanocrystals (Si-ncs) embedded in a silicon dioxide (SiO2) based matrix of a sufficiently good optical quality and stable emission properties, which exhibits positive optical gain and can be used as an active material in a laser cavity. The technique of sample preparation is based on a combination of the modified electrochemical etching of silicon wafers and the SiO2 based sol-gel processing. This method enables us to achieve relatively small oxidized Si-ncs (≈2-3 nm), embedded at virtually arbitrary volume fraction in a SiO2 based matrix, which is believed to be advantageous for easier stimulated emission (StE) onset observation. The optical gain coefficient was measured using the standard "Variable Stripe Length" (VSL) method, the application of which, however, is limited for low gain. Therefore we implemented a supplemental "Shifting Excitation Spot" (SES) method, enabling us to determine the optical gain coefficient even of such a small magnitude that will not be recognized by the VSL method itself. We observed a positive net gain coecient originating from the StE in dierent Si-ncs/SiO2 samples under different excitation and detection conditions. To prepare a laser system, a positive net gain observation is essential as well as a positive optical feedback. Using an external cavity as a resonator requires a high optical quality sample. This is, however, hardly achievable under the high Si-ncs volume fraction requirements for the StE onset. Because of that we decided to build an optically induced "Distributed Feedback Laser" (DFL) system, where the cavity is distributed over the whole sample volume and the cavity grating constant (≈166 nm) is lower than expected mean homogeneity length in our sample (≈0. 5-1. 0 μm). Therefore, a positive but low effect on the emission of Si-ncs is expected. Moreover, such type of DFL cavity is easily tuneable. The functionality of the DFL setup was tested using reference organic dye solutions in methanol, where a tuneable lasing action was successfully achieved. Similar tuneable cavity modes were also observed in different Si-ncs/SiO2 samples, however, of broader widths and less intense, compared to the organic dyes, which is mainly given by their lower optical quality. To understand and describe the mode selection in such a material, we developed a simple theoretical model, enabling us to determine the selected mode shape with respect to the sample homogeneity length and the character of the inhomogeneities. We proved the active feedback of the DFL cavity on the emission of our Si-ncs/SiO2 samples and proposed some further steps for future sample improvement
Petukhou, Yu A., V. V. Uglov, N. T. Kvasov, A. V. Punko, I. L. Doroshevich, V. M. Astashynski et A. M. Kuzmitski. « Formation of silicon-based nanostructures by compression plasma flows ». Thesis, Видавництво СумДУ, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20860.
Texte intégralLivres sur le sujet "Silicon Based Nanostructure"
P, Legrand A., et Senemaud C, dir. Nanostructured silicon-based powders and composites. London : Taylor & Francis, 2003.
Trouver le texte intégralRoyal Society of Chemistry (Great Britain), dir. Silica-based materials for advanced chemical applications. Cambridge : RSC Pub., 2009.
Trouver le texte intégralSOI -- na mi ji shu shi dai de gao duan gui ji cai liao : SOI : advanced silicon-based materials for the nanotechnology era. Hefei Shi : Zhongguo ke xue ji shu da xue chu ban she, 2009.
Trouver le texte intégralInternational School of Physics "Enrico Fermi" (1998 Varenna, Italy). Silicon-based microphotonics : From basics to applications : Varenna on Lake Como, Villa Monastero, 21-31 July 1998. Amsterdam : IOS Press, 1999.
Trouver le texte intégralTernon, Céline, dir. Silica and Silicon Based Nanostructures. MDPI, 2022. http://dx.doi.org/10.3390/books978-3-0365-4765-7.
Texte intégralSenemaud, Christiane, et A. P. Legrand. Nanostructured Silicon-based Powders and Composites. Taylor & Francis Group, 2002.
Trouver le texte intégralLegrand, Andre Pierre, et Christiane Senemaud. Nanostructured Silicon-Based Powders and Composites. Taylor & Francis Group, 2002.
Trouver le texte intégralNanostructured Silicon-based Powders and Composites. London : Taylor & Francis Group Plc, 2004.
Trouver le texte intégralLegrand, Andre Pierre, et Christine Senemaud. Nanostructured Silicon-Based Powders and Composites. Taylor & Francis Group, 2002.
Trouver le texte intégralLegrand, Andre Pierre, et Christiane Senemaud. Nanostructured Silicon-Based Powders and Composites. Taylor & Francis Group, 2002.
Trouver le texte intégralChapitres de livres sur le sujet "Silicon Based Nanostructure"
Offenhäusser, Andreas, Sven Ingebrandt, Michael Pabst et Günter Wrobel. « Interfacing Neurons and Silicon-Based Devices ». Dans Nanostructure Science and Technology, 287–301. New York, NY : Springer New York, 2009. http://dx.doi.org/10.1007/978-0-387-09459-5_13.
Texte intégralCahay, M., et S. Bandyopadhyay. « Room Temperature Silicon Spin-Based Transistors ». Dans Nanostructure Science and Technology, 173–94. Boston, MA : Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-78689-6_6.
Texte intégralLatu-Romain, Laurence, et Maelig Ollivier. « SiC-Based One-Dimensional Nanostructure Technologies ». Dans Silicon Carbide One-Dimensional Nanostructures, 87–101. Hoboken, NJ, USA : John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119081470.ch4.
Texte intégralFang, Jinghua, Igor Levchenko, Morteza Aramesh, Amanda E. Rider, Steven Prawer et Kostya Ostrikov. « Plasma Enabled Fabrication of Silicon Carbide Nanostructures ». Dans Silicon-based Nanomaterials, 161–78. New York, NY : Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8169-0_8.
Texte intégralHsueh, Hung-Chung, Guang-Yu Guo et Steven G. Louie. « Electronic and Optical Properties of Silicon Carbide Nanostructures ». Dans Silicon-based Nanomaterials, 139–59. New York, NY : Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8169-0_7.
Texte intégralRay, Mallar, Sayak Dutta Gupta et Atrayee Hazra. « Silicon-based core–shell nanostructures ». Dans Silicon Nanomaterials Sourcebook, 215–62. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series : Series in materials science and engineering : CRC Press, 2017. http://dx.doi.org/10.4324/9781315153551-11.
Texte intégralShe, Guangwei, Hailong Liu, Lixuan Mu et Wensheng Shi. « Synthesis, Properties, and Applications of One-Dimensional Transition Metal Silicide Nanostructures ». Dans Silicon-based Nanomaterials, 265–325. New York, NY : Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8169-0_12.
Texte intégralBoarino, Luca, et Giampiero Amato. « Nanostructures Based on Porous Silicon ». Dans Encyclopedia of Nanotechnology, 1–13. Dordrecht : Springer Netherlands, 2015. http://dx.doi.org/10.1007/978-94-007-6178-0_233-2.
Texte intégralBoarino, Luca, et Giampiero Amato. « Nanostructures Based on Porous Silicon ». Dans Encyclopedia of Nanotechnology, 2776–87. Dordrecht : Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-017-9780-1_233.
Texte intégralYoda, Minami, Jean-Luc Garden, Olivier Bourgeois, Aeraj Haque, Aloke Kumar, Hans Deyhle, Simone Hieber et al. « Nanostructures Based on Porous Silicon ». Dans Encyclopedia of Nanotechnology, 1781–89. Dordrecht : Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_233.
Texte intégralActes de conférences sur le sujet "Silicon Based Nanostructure"
Li, Meicheng, Rui Huang, Pengfei Fu, Ruike Li, Fan Bai, Dandan Song et Yingfeng Li. « Optical Property of Silicon Based Nanostructure and Fabrication of Silicon Nanostructure Solar Cells ». Dans Optical Nanostructures and Advanced Materials for Photovoltaics. Washington, D.C. : OSA, 2014. http://dx.doi.org/10.1364/pv.2014.pw3c.5.
Texte intégralAsri, Muhammad Izzudin Ahmad, Mohammed Nazibul Hasan, Yusri Md Yunos, Marwan Nafea et Mohamed Sultan Mohamed Ali. « Silicon Nanostructure based Surface Acoustic Wave Gas Sensor ». Dans 2022 IEEE Sensors. IEEE, 2022. http://dx.doi.org/10.1109/sensors52175.2022.9967303.
Texte intégralSun, Xinjie, Xin He, Zixin Cai, Xu Liu et Xiang Hao. « Circular Polarizer Based on Multi-stack Plasmonic Nanostructure for Optical Communication ». Dans Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C. : OSA, 2021. http://dx.doi.org/10.1364/iprsn.2021.jtu1a.16.
Texte intégralSesen, Muhsincan, Berkay Arda Kosar, Ali Kosar, Wisam Khudhayer, Berk Ahmet Ahishalioglu et Tansel Karabacak. « A Compact Nanostructure Enhanced Heat Sink With Flow in a Rectangular Channel ». Dans ASME 2010 10th Biennial Conference on Engineering Systems Design and Analysis. ASMEDC, 2010. http://dx.doi.org/10.1115/esda2010-25336.
Texte intégralPeng, Longyao, Liguo Zhu, Hao Tang, Kun Meng, Sencheng Zhong, Zeren Li et Rongzhu Zhang. « Study on silicon nanostructure based solar cell by ultrafast terahertz spectroscopy ». Dans ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, sous la direction de Marco Rahm, Konstantin Vodopyanov, Wei Shi et Cunlin Zhang. SPIE, 2013. http://dx.doi.org/10.1117/12.2033123.
Texte intégralLiang, Jui-Wen, Wen-Yu Wang et Cho-Liang Chung. « Preparation of superhydrophobic silicon-based net-like hollow nanostructure using electrospinning ». Dans 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC). IEEE, 2018. http://dx.doi.org/10.23919/icep.2018.8374362.
Texte intégralLee, Jongwon, Stephen M. Goodnick et Christiana B. Honsberg. « Limiting efficiency of silicon based nanostructure solar cells for multiple exciton generation ». Dans 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744320.
Texte intégralKraus, S., R. Shiloh, J. Illmer, T. Chlouba, P. Yousefi, N. Schönenberger, U. Niedermayer, A. Mittelbach et P. Hommelhoff. « Electron phase-space control in photonic chip-based particle acceleration ». Dans CLEO : QELS_Fundamental Science. Washington, D.C. : Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_qels.2022.fth5b.4.
Texte intégralLacroix, David, Karl Joulain, Gilles Parent et Sebastien Fumeron. « Monte Carlo Simulation of Heat Pulse Propagation in Silicon Nanostructure ». Dans ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer. ASMEDC, 2008. http://dx.doi.org/10.1115/mnht2008-52101.
Texte intégralLepeshov, S., A. Krasnok, O. Kotov et A. Alu. « Strong Coupling in Core-Shell Nanostructure Based on Silicon Nanoparticle and TMDC Monolayer ». Dans 2018 International Conference Laser Optics (ICLO). IEEE, 2018. http://dx.doi.org/10.1109/lo.2018.8435388.
Texte intégralRapports d'organisations sur le sujet "Silicon Based Nanostructure"
Ohuchi, Fumio, et Rajandra Bordia. Precursor-Derived Nanostructured Silicon Carbide Based Materials for Magnetohydrodynamic Electrode Applications. Office of Scientific and Technical Information (OSTI), juillet 2019. http://dx.doi.org/10.2172/1542886.
Texte intégralOhuchi, Fumio, et Rajandra Bordia. Precursor-Derived Nanostructured Silicon Carbide Based Materials for Magnetohydrodynamic Electrode Applications. Office of Scientific and Technical Information (OSTI), décembre 2018. http://dx.doi.org/10.2172/1489149.
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