Articles de revues : « Semiconductor light sources »

1

Shields, Andrew J. « Semiconductor quantum light sources ». Nature Photonics 1, n^o 4 (avril 2007) : 215–23. http://dx.doi.org/10.1038/nphoton.2007.46.

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Chen, Disheng, et Weibo Gao. « Quantum light sources from semiconductor ». Journal of Semiconductors 40, n^o 7 (juillet 2019) : 070301. http://dx.doi.org/10.1088/1674-4926/40/7/070301.

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Sokolovskii, G. S., V. V. Dudelev, S. N. Losev, K. K. Soboleva, A. G. Deryagin, K. A. Fedorova, V. I. Kuchinskii, W. Sibbett et E. U. Rafailov. « Bessel beams from semiconductor light sources ». Progress in Quantum Electronics 38, n^o 4 (juillet 2014) : 157–88. http://dx.doi.org/10.1016/j.pquantelec.2014.07.001.

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Nagai, Haruo. « Semiconductor light sources for photonic sensing ». Optics & ; Laser Technology 29, n^o 2 (mars 1997) : xv. http://dx.doi.org/10.1016/s0030-3992(97)88450-2.

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Khramtsov, Igor A., et Dmitry Yu Fedyanin. « Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors ». Materials 12, n^o 12 (19 juin 2019) : 1972. http://dx.doi.org/10.3390/ma12121972.

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Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of acceptors greatly limits the performance and practical applicability of wide-bandgap semiconductor devices. Here, we study a novel effect which allows homojunction semiconductor devices, such as p-i-n diodes, to operate well above the limit imposed by doping of the p-type material. Using a rigorous numerical approach, we show that the density of injected holes can exceed the density of holes in the p-type injection layer by up to four orders of magnitude depending on the semiconductor material, dopant, and temperature, which gives the possibility to significantly overcome the doping problem. We present a clear physical explanation of this unexpected feature of wide-bandgap semiconductor p-i-n diodes and closely examine it in 4H-SiC, 3C-SiC, AlN, and ZnS structures. The predicted effect can be exploited to develop bright-light-emitting devices, especially electrically driven nonclassical light sources based on color centers in SiC, AlN, ZnO, and other wide-bandgap semiconductors.

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Gaisler, V. A., I. A. Derebezov, A. V. Gaisler, D. V. Dmitriev, A. I. Toropov, M. M. Kachanova, Yu A. Zhivodkov, A. S. Kozhuhov, D. V. Scheglov et A. V. Latyshev. « Subminiature Light Sources Based on Semiconductor Nanostructures ». Optoelectronics, Instrumentation and Data Processing 56, n^o 5 (septembre 2020) : 518–26. http://dx.doi.org/10.3103/s8756699020050052.

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JIANG, Zi-qi, Xiao-mei LIU, Hua LIU et Peng PENG. « Design of semiconductor laser white light sources ». Chinese Journal of Liquid Crystal and Displays 36, n^o 3 (2021) : 371–78. http://dx.doi.org/10.37188/cjlcd.2020-0225.

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Ryzhikov, I. V., N. N. Rudenko et T. T. Silakova. « Semiconductor light sources—the revolution in optoelectronics ». Radioelectronics and Communications Systems 51, n^o 4 (avril 2008) : 224–31. http://dx.doi.org/10.3103/s0735272708040079.

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Chou, H., et S. Ezekiel. « Wavelength stabilization of broadband semiconductor light sources ». Optics Letters 10, n^o 12 (1 décembre 1985) : 612. http://dx.doi.org/10.1364/ol.10.000612.

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Sokolovskii, G. S., V. V. Dudelev, S. N. Losev, S. A. Zolotovskaya, A. G. Deryagin, V. I. Kuchinskii, E. U. Rafailov et W. Sibbett. « Generation of propagation-invariant light beams from semiconductor light sources ». Technical Physics Letters 34, n^o 12 (décembre 2008) : 1075–78. http://dx.doi.org/10.1134/s1063785008120262.

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Olimov, Lutfiddin Omanovich. « DETERMINATION OF EFFICIENT OPTICAL SOURCES OF AIR PROPAGATION FOR FISHERIES BIOPHYSICAL DEVICES ». European International Journal of Multidisciplinary Research and Management Studies 02, n^o 10 (1 octobre 2022) : 01–08. http://dx.doi.org/10.55640/eijmrms-02-10-01.

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From the analysis of the literature, it is known that agricultural pest control devices designed to combat insects or for fishing attract flying insects, the growth of functional systems of Fish and fish larvae in one norm plays an important role in the development of light rays of optical radiation sources. Instruments with incandescent lamp, fluorescent, halogen or light-emitting semiconductor optoelectronic irradiators are widely used as sources of optical radiation in this area. When creating agricultural devices from them, light-emitting semiconductor optoelectronic devices are considered to withstand competition with performance, energy efficiency and other physical characteristics. In connection with these, the research methods and results of the study on the distribution of semiconductor optoelectronic irradiators in the air and aqueous medium as well as the spectral characteristics are described in this work.

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Hnatovsky, Cyril, Stephen Mihailov, Michael Hilke, Loren Pfeiffer, Ken West et Sergei Studenikin. « An Optical Technique to Produce Embedded Quantum Structures in Semiconductors ». Nanomaterials 13, n^o 10 (12 mai 2023) : 1622. http://dx.doi.org/10.3390/nano13101622.

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The performance of a semiconductor quantum-electronic device ultimately depends on the quality of the semiconductor materials it is made of and on how well the device is isolated from electrostatic fluctuations caused by unavoidable surface charges and other sources of electric noise. Current technology to fabricate quantum semiconductor devices relies on surface gates which impose strong limitations on the maximum distance from the surface where the confining electrostatic potentials can be engineered. Surface gates also introduce strain fields which cause imperfections in the semiconductor crystal structure. Another way to create confining electrostatic potentials inside semiconductors is by means of light and photosensitive dopants. Light can be structured in the form of perfectly parallel sheets of high and low intensity which can penetrate deep into a semiconductor and, importantly, light does not deteriorate the quality of the semiconductor crystal. In this work, we employ these important properties of structured light to form metastable states of photo-sensitive impurities inside a GaAs/AlGaAs quantum well structure in order to create persistent periodic electrostatic potentials at large predetermined distances from the sample surface. The amplitude of the light-induced potential is controlled by gradually increasing the light fluence at the sample surface and simultaneously measuring the amplitude of Weiss commensurability oscillations in the magnetoresistivity.

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SHIELDS, Andrew, Mark STEVENSON, Riichi KATO et Michael PEPPER. « Semiconductor Light Sources for Applications in Quantum Optics ». Journal of the Spectroscopical Society of Japan 52, n^o 5 (2003) : 271–80. http://dx.doi.org/10.5111/bunkou.52.271.

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No, You-Shin. « Electrically Driven Micro- and Nano-Scale Semiconductor Light Sources ». Applied Sciences 9, n^o 4 (25 février 2019) : 802. http://dx.doi.org/10.3390/app9040802.

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Emerging optical technology capable of addressing the limits in modern electronics must incorporate unique solutions to bring about a revolution in high-speed, on-chip data communication and information processing. Among the possible optical devices that can be developed, the electrically driven, ultrasmall semiconductor light source is the most essential element for a compact, power-efficient photonic integrated circuit. In this review, we cover the recent development of the electrically driven light-emitting devices based on various micro- and nano-scale semiconductor optical cavities. We also discuss the recent advances in the integration of these light sources with passive photonic circuits.

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Li, Rusong, Fengqi Liu et Quanyong Lu. « Quantum Light Source Based on Semiconductor Quantum Dots : A Review ». Photonics 10, n^o 6 (1 juin 2023) : 639. http://dx.doi.org/10.3390/photonics10060639.

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Quantum light sources that generate single photons and entangled photons have important applications in the fields of secure quantum communication and linear optical quantum computing. Self-assembled semiconductor quantum dots, also known as “artificial atoms”, have discrete energy-level structures due to electronic confinement in all three spatial dimensions. It has the advantages of high stability, high brightness, deterministic, and tunable emission wavelength, and is easy to integrate into an optical microcavity with a high-quality factor, which can realize a high-performance quantum light source. In this paper, we first introduce the generation principles, properties, and applications of single-photon sources in the field of quantum information and then present implementations and development of quantum light sources in self-assembled semiconductor quantum dot materials. Finally, we conclude with an outlook on the future development of semiconductor quantum dot quantum light sources.

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Sato, K. « Semiconductor light sources for 40-Gb/s transmission systems ». Journal of Lightwave Technology 20, n^o 12 (décembre 2002) : 2035–43. http://dx.doi.org/10.1109/jlt.2002.806763.

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Zhuchkov, N. A., S. A. Safin, A. T. Semenov et V. R. Shidlovskiĭ. « Multifunctional semiconductor light sources and modules based on them ». Soviet Journal of Quantum Electronics 21, n^o 11 (30 novembre 1991) : 1176–78. http://dx.doi.org/10.1070/qe1991v021n11abeh004342.

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Stradling, R. A. « Semiconductor light sources for mid–infrared applications : concluding remarks ». Philosophical Transactions of the Royal Society of London. Series A : Mathematical, Physical and Engineering Sciences 359, n^o 1780 (15 mars 2001) : 645–58. http://dx.doi.org/10.1098/rsta.2000.0748.

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YOKOYAMA, Hiroyuki. « Functional Light Pulse Sources based on Advanced Semiconductor Laser Technologies ». Review of Laser Engineering 45, n^o 6 (2017) : 314. http://dx.doi.org/10.2184/lsj.45.6_314.

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Landgraf, S. « Application of semiconductor light sources for investigations of photochemical reactions ». Spectrochimica Acta Part A : Molecular and Biomolecular Spectroscopy 57, n^o 10 (septembre 2001) : 2029–48. http://dx.doi.org/10.1016/s1386-1425(01)00502-9.

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Karachinsky, L. Ya, A. V. Babichev, A. G. Gladyshev, D. V. Denisov, A. V. Filimonov, I. I. Novikov et A. Yu Egorov. « Semiconductor light sources for near- and mid-infrared spectral ranges ». Journal of Physics : Conference Series 917 (novembre 2017) : 022003. http://dx.doi.org/10.1088/1742-6596/917/2/022003.

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Bourget, C. Michael. « An Introduction to Light-emitting Diodes ». HortScience 43, n^o 7 (décembre 2008) : 1944–46. http://dx.doi.org/10.21273/hortsci.43.7.1944.

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Light-emitting diodes (LEDs) are semiconductor devices that produce noncoherent, narrow-spectrum light when forward voltage is applied. LEDs range in wavelength from the UVC band to infrared (IR) and are available in packages ranging from milliwatts to more than 10 W. The first LED was an IR-emitting device and was patented in 1961. In 1962, the first practical visible spectrum LED was developed. The first high-power (1-W) LEDs were developed in the late 1990s. LEDs create light through a semiconductor process rather than with a superheated element, ionized gas, or an arc discharge as in traditional light sources. The wavelength of the light emitted is determined by the materials used to form the semiconductor junction. LEDs produce more light per electrical watt than incandescent lamps with the latest devices rivaling fluorescent tubes in energy efficiency. They are solid-state devices, which are much more robust than any glass-envelope lamp and contain no hazardous materials like fluorescent lamps. LEDs also have a much longer lifetime than incandescent, fluorescent, and high-density discharge lamps (U.S. Dept. of Energy). Although LEDs possess many advantages over traditional light sources, a total system approach must be considered when designing an LED-based lighting system. LEDs do not radiate heat directly, but do produce heat that must be removed to ensure maximum performance and lifetime. LEDs require a constant-current DC power source rather than a standard AC line voltage. Finally, because LEDs are directional light sources, external optics may be necessary to produce the desired light distribution. A properly designed LED light system is capable of providing performance and a lifetime well beyond any traditional lighting source.

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Olisovets, Artem Yu, Vasiliy I. Tuev et Semen Р. Shkarupo. « The Nonlinear Properties of Semiconductor Voltage Converters for LED Light Sources ». Vestnik MEI 5, n^o 5 (2018) : 42–47. http://dx.doi.org/10.24160/1993-6982-2018-5-42-47.

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Nádas, József, Vilmos Rakovics, István Réti, Csaba Dücső et Gábor Battistig. « Spatially and spectrally stable semiconductor light sources for near infrared spectroscopy ». Materials Today : Proceedings 4, n^o 7 (2017) : 7107–13. http://dx.doi.org/10.1016/j.matpr.2017.08.004.

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Li, Xu, Chunfeng Wang, Yuantian Zheng, Zefeng Huang, Jiangcheng Luo, Mingju Zhu, Tianlong Liang et al. « Smart Semiconductor-Heterojunctions Mechanoluminescence for printable and wearable sports light sources ». Materials & ; Design 225 (janvier 2023) : 111589. http://dx.doi.org/10.1016/j.matdes.2023.111589.

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Salih, Raad N., et Salah-Aldin Naman. « Photodegradation of 2, 4, 5, 6-Tetrachloroisophthalonitrile (Chlorothalonil) by Visible and Ultraviolet Light in the Presence of ZnO and TiO2 ». Science Journal of University of Zakho 7, n^o 3 (30 septembre 2019) : 79–88. http://dx.doi.org/10.25271/sjuoz.2019.7.3.605.

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photocatalytic degradation of fungicides (chlorothalonil) in suspension aqueous solution with semiconductors (tio2, zno) and without semiconductor has been investigated. the influence of different parameters such as light sources, the concentration of fungicides, type of semiconductors and temperature were studied by uv-visible spectrophotometer at 232 and 254 nm. the degradation reaction order spectra of chlorothalonil were determined which first order at 232 nm and second order at 254 nm. in addition, the rate constant, arrhenius factor and energy of activation can be estimated for both peaks. moreover, conductivity of chlorothalonil has been recorded during the photo-degradation and the rate of reaction also has been determined that dependent on product formation.

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Boscherini, Federico, D. De Salvador, G. Bisognin et G. Ciatto. « New Opportunities to Study Defects by Soft X-Ray Absorption Fine Structure ». Solid State Phenomena 131-133 (octobre 2007) : 473–78. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.473.

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X-ray absorption fine structure can determine the local structure of most atoms in the periodic table. The great recent improvements in the performance of synchrotron radiation sources and techniques and advances in the simulations of the spectra have opened new opportunities, especially in the study of dilute systems in the soft X-ray range. In this contribution we will show some recent results that demonstrate how semiconductor physics may greatly benefit from such progress. In fact, doping or alloying of semiconductors with light elements, that have K absorption edges in the soft X-ray range, is widely employed to tune semiconductor properties. X-ray absorption fine structure investigations on such systems can give an important contribution towards the understanding and optimization of technological processes.

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Lenstra, Daan. « Special Issue “Semiconductor Laser Dynamics : Fundamentals and Applications” ». Photonics 7, n^o 2 (11 juin 2020) : 40. http://dx.doi.org/10.3390/photonics7020040.

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With the advent of integrated photonics, a crucial role is played by semiconductor diode lasers (SDLs) as coherent light sources. Old paradigms of semiconductor laser dynamics, like optical injection, external feedback and the coupling of lasers, regained relevance when SDLs were integrated on photonic chips. This Special Issue presents a collection of seven invited feature papers and 11 contributed papers reporting on recent advances in semiconductor laser dynamics.

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Starecki, T. « Optimization of the Duty Factor οf Semiconductor Light Sources Used in Photoacoustics ». Acta Physica Polonica A 114, n^o 6A (décembre 2008) : A—205—A—210. http://dx.doi.org/10.12693/aphyspola.114.a-205.

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Maruska, Herbert Paul, et Walden Clark Rhines. « A modern perspective on the history of semiconductor nitride blue light sources ». Solid-State Electronics 111 (septembre 2015) : 32–41. http://dx.doi.org/10.1016/j.sse.2015.04.010.

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Landgraf, Stephan. « Time-Resolved Fluorescence HPLC Detection Using Semiconductor Light Sources : Principles and Applications ». Chemical Engineering & ; Technology 39, n^o 1 (31 août 2015) : 175–82. http://dx.doi.org/10.1002/ceat.201500152.

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Buchal, Ch, et M. Löken. « Silicon-Based Metal-Semiconductor-Metal Detectors ». MRS Bulletin 23, n^o 4 (avril 1998) : 55–59. http://dx.doi.org/10.1557/s088376940003027x.

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Photodetectors must provide fast and efficient conversion of photons to charge carriers. When considering semiconductor light sources, the indirect bandgap of silicon and germanium represents a serious obstacle to radiative electron-hole recombinations. Momentum conservation demands the simultaneous interaction of the electron-hole pair with a momentum-matching phonon. As a consequence, radiative recombinations are five orders of magnitude less probable in Si if compared to a direct semiconductor such as GaAs.Although the absorption of a photon and the generation of an electron-hole pair may be considered as the inverse process to emission, photon absorption within indirect semiconductors is a highly probable process if the photon energy is sufficient to bridge the energy gap in a direct process. The resulting electronhole pair is created in an excited state and relaxes sequentially. The ubiquitous-silicon solar cells operate this way. In the visible spectral range, Si photodetectors have demonstrated fast and efficient performance, being readily adapted for opto electronic applications and being fully compatible to standard-silicon processing schemes.

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Vaskin, Aleksandr, Radoslaw Kolkowski, A. Femius Koenderink et Isabelle Staude. « Light-emitting metasurfaces ». Nanophotonics 8, n^o 7 (11 juillet 2019) : 1151–98. http://dx.doi.org/10.1515/nanoph-2019-0110.

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AbstractPhotonic metasurfaces, that is, two-dimensional arrangements of designed plasmonic or dielectric resonant scatterers, have been established as a successful concept for controlling light fields at the nanoscale. While the majority of research so far has concentrated on passive metasurfaces, the direct integration of nanoscale emitters into the metasurface architecture offers unique opportunities ranging from fundamental investigations of complex light-matter interactions to the creation of flat sources of tailored light fields. While the integration of emitters in metasurfaces as well as many fundamental effects occurring in such structures were initially studied in the realm of nanoplasmonics, the field has recently gained significant momentum following the development of Mie-resonant dielectric metasurfaces. Because of their low absorption losses, additional possibilities for emitter integration, and compatibility with semiconductor-based light-emitting devices, all-dielectric systems are promising for highly efficient metasurface light sources. Furthermore, a flurry of new emission phenomena are expected based on their multipolar resonant response. This review reports on the state of the art of light-emitting metasurfaces, covering both plasmonic and all-dielectric systems.

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Shu, Xinpeng. « Research on Photoelectric Properties of ZnO-based Semiconductor Material ». Journal of Physics : Conference Series 2541, n^o 1 (1 juillet 2023) : 012060. http://dx.doi.org/10.1088/1742-6596/2541/1/012060.

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Abstract In recent years, many semiconductor materials have been applied to the photocatalysis technology. As a semiconductor with wide band gap (3.37 eV), ZnO has received extensive attention in the photocatalytic degradation of organic pollutants due to its rich morphology, low cost and other advantages. However, due to the wide band gap of ZnO, it can only absorb ultraviolet light (accounting for about 4% of the whole solar spectrum), which has greatly limited the application of ZnO semiconductor materials. BiOI/ZnO binary complexes were synthesized by simple hydrothermal and solvothermal methods. Their phenol degradation activities were tested under different light sources. The mechanism of photocatalytic degradation of phenol was reasonably explained by free radical trapping experiment, surface photovoltage, transient photovoltage, fluorescence and other tests.

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Lee, Ho-Jun, Jung-Wook Min, Kye-Jin Lee, Kwang-Yong Choi, Jung-Hyun Eum, Dong-Kun Lee et Si-Young Bae. « Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications ». Journal of Nanomaterials 2015 (2015) : 1–6. http://dx.doi.org/10.1155/2015/142096.

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Recent needs of semiconductor lighting sources have pursued diverse functionalities such as flexibility and transparency under high quantum efficiency. Inorganic/organic hybrid light-emitting diodes (LEDs) are one way to meet these requirements. Here, we report on flexible III-nitride-based LEDs and the improvement of their electrical and optical properties. To realize high light emission power and stable current operation, high-quality epitaxy and elaborate chip processing were performed. The fabricated flexible LEDs showed over threefold optical output power compared to normal LEDs on Si and had comparable forward voltage and series resistances.

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Redding, Brandon, Alexander Cerjan, Xue Huang, Minjoo Larry Lee, A. Douglas Stone, Michael A. Choma et Hui Cao. « Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging ». Proceedings of the National Academy of Sciences 112, n^o 5 (20 janvier 2015) : 1304–9. http://dx.doi.org/10.1073/pnas.1419672112.

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The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications.

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MITSUMORI, Yasuyoshi. « Development of Quantum Light Sources using Semiconductor Microcavities for Realizing Quantum Information Communication ». Journal of the Institute of Electrical Engineers of Japan 137, n^o 4 (2017) : 232–35. http://dx.doi.org/10.1541/ieejjournal.137.232.

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Bergmann, Klaus. « Extreme Ultraviolet Radiation Sources from Dense Plasmas ». Atoms 11, n^o 9 (31 août 2023) : 118. http://dx.doi.org/10.3390/atoms11090118.

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The concept of dense and hot plasmas can be used to build up powerful and brilliant radiation sources in the soft X-ray and extreme ultraviolet spectral range. Such sources are used for nanoscale imaging and structuring applications, such as EUV lithography in the semiconductor industry. An understanding of light-generating atomic processes and radiation transport within the plasma is mandatory for optimization. The basic principles and technical concepts using either a pulsed laser or a gas discharge for plasma generation are presented, and critical aspects in the ionization dynamics are outlined within the framework of a simplified atomic physics model.

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Couteau, C., A. Larrue, C. Wilhelm et C. Soci. « Nanowire Lasers ». Nanophotonics 4, n^o 1 (20 mai 2015) : 90–107. http://dx.doi.org/10.1515/nanoph-2015-0005.

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Abstract:We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs), solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D) nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

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Li, Chun, Zhen Liu, Jie Chen, Yan Gao, Meili Li et Qing Zhang. « Semiconductor nanowire plasmonic lasers ». Nanophotonics 8, n^o 12 (30 octobre 2019) : 2091–110. http://dx.doi.org/10.1515/nanoph-2019-0206.

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AbstractSemiconductor nanowires (NW) hold great promise for micro/nanolasers owing to their naturally formed resonant microcavity, tightly confined electromagnetic field, and outstanding capability of integration with planar waveguide for on-chip optoelectronic applications. However, constrained by the optical diffraction limit, the dimension of semiconductor lasers cannot be smaller than half the optical wavelength in free space, typically several hundreds of nanometers. Semiconductor NW plasmonic lasers provide a solution to break this limitation and realize deep sub-wavelength light sources. In this review, we summarize the advances of semiconductor NW plasmonic lasers since their first demonstration in 2009. First of all, we briefly look into the fabrication and physical/chemical properties of semiconductor NWs. Next, we discuss the fundamentals of surface plasmons as well as the recent progress in semiconductor NW plasmonic lasers from the aspects of multicolor realization, threshold reduction, ultrafast modulation, and electrically driven operations, along with their applications in sensing and integrated optics. Finally, we provide insights into bright perspectives and remaining challenges.

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Anttu, Nicklas, Henrik Mäntynen, Anastasiia Sorokina, Pyry Kivisaari, Toufik Sadi et Harri Lipsanen. « Geometry Tailoring of Emission from Semiconductor Nanowires and Nanocones ». Photonics 7, n^o 2 (26 mars 2020) : 23. http://dx.doi.org/10.3390/photonics7020023.

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Semiconductor nanowires are of interest as light emitters in applications such as light-emitting diodes and single-photon sources. Due to the three-dimensional geometry in combination with a size comparable to the wavelength of the emitted light, nanowires have shown strong scattering effects for the emitted light. Here, we demonstrate with electromagnetic modeling that the emission properties of nanowires/nanocones show a complicated dependence on the geometry of the nanowire/nanocone, the shape and position of the emitter region, and the polarization of the emitter. We show that with proper design, the extraction efficiency can close in on 80% for as-grown single nanowires/nanocones. Importantly, we demonstrate how the internal quantum efficiency of the emitter plays a large role in the design process. A considerably different geometry design approach should be undertaken at low and high internal quantum efficiency. Due to the complicated design optimization, we strongly recommend the use of electromagnetic modeling of the emission to give guidance for suitable designs before starting the fabrication and processing of nanowire/nanocone-based light emitters.

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Bishop, S. G., J. K. Cannon, H. B. Yağcı, R. N. Clark, J. P. Hadden, W. Langbein et A. J. Bennett. « Evanescent-field assisted photon collection from quantum emitters under a solid immersion lens ». New Journal of Physics 24, n^o 10 (1 octobre 2022) : 103027. http://dx.doi.org/10.1088/1367-2630/ac9697.

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Abstract Solid-state quantum light sources are being intensively investigated for applications in quantum technology. A key challenge is to extract light from host materials with high refractive index, where efficiency is limited by refraction and total internal reflection. Here we show that an index-matched solid immersion lens can, if placed sufficiently close to the semiconductor, extract light coupled through the evanescent field at the surface. Using both numerical simulations and experiments, we investigate how changing the thickness of the spacer between the semiconductor and lens impacts the collection efficiency (CE). Using automatic selection and measurement of 100 s of individually addressable colour centres in several aluminium nitride samples we demonstrate spacer-thickness dependent photon CE enhancement, with a mean enhancement factor of 4.2 and a highest measured photon detection rate of 743±4kcps.

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Sledz, Florian, Assegid M. Flatae, Stefano Lagomarsino, Savino Piccolomo, Shannon S. Nicley, Ken Haenen, Robert Rechenberg et al. « Light emission from color centers in phosphorus-doped diamond ». EPJ Web of Conferences 266 (2022) : 09008. http://dx.doi.org/10.1051/epjconf/202226609008.

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Light emission from color centers in diamond is being extensively investigated for developing, among other quantum devices, single-photon sources operating at room temperature. By doping diamond with phosphorus, one obtains an n-type semiconductor, which can be exploited for the electrical excitation of color centers. Here, we discuss the optical properties of color centers in phosphorus-doped diamond, especially the silicon-vacancy center, presenting the single-photon emission characteristics and the temperature dependence aiming for electroluminescent single-photon emitting devices.

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Shi, Wenqi, Canwen Zou, Yulian Cao et Jianguo Liu. « The Progress and Trend of Heterogeneous Integration Silicon/III-V Semiconductor Optical Amplifiers ». Photonics 10, n^o 2 (3 février 2023) : 161. http://dx.doi.org/10.3390/photonics10020161.

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Silicon photonics is a revolutionary technology in the integrated photonics field which has experienced rapid development over the past several decades. High-quality III-V semiconductor components on Si platforms have shown their great potential to realize on-chip light-emitting sources for Si photonics with low-cost and high-density integration. In this review, we will focus on semiconductor optical amplifiers (SOAs), which have received considerable interest in diverse photonic applications. SOAs have demonstrated high performance in various on-chip optical applications through different integration technologies on Si substrates. Moreover, SOAs are also considered as promising candidates for future light sources in the wavelength tunable laser, which is one of the key suitable components in coherent optical devices. Understanding the development and trends of heterogeneous integration Silicon/III-V SOA will help researchers to come up with effective strategies to combat the emerging challenges in this family of devices, progressing towards next-generation applications.

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Kim, Je Won. « Nanorod Array Structure Through a Nanomolding Process for Semiconductor Lighting and Display Applications ». Nano 14, n^o 12 (décembre 2019) : 1950153. http://dx.doi.org/10.1142/s1793292019501534.

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Three-dimensional structure and growth can be more appropriately realized through a nanomanufacturing process that uses a mask patterning and etching process. Unlike conventional single-wavelength semiconductor lighting sources, the uniformity and reproducibility of the nanomolding process in this study enable multiple wavelengths to be used in lighting and display applications. This study shows the various wavelength characteristics through a newly developed nanomold and its nanorod array and also proves the feasibility of a white light without phosphors for emitting multiple wavelengths from a single chip. In this study, we proposed the possibility of wavelength control by fabricating a light-emitting diode with a three-dimensional nanostructure, using a nanomold with semiconductor processing.

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Sobotka, Piotr, Maciej Przychodzki, Konrad Uściło, Tomasz R. Woliński et Monika Staniszewska. « Effect of Ultraviolet Light C (UV-C) Radiation Generated by Semiconductor Light Sources on Human Beta-Coronaviruses’ Inactivation ». Materials 15, n^o 6 (20 mars 2022) : 2302. http://dx.doi.org/10.3390/ma15062302.

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The severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) pandemic has completely disrupted people’s lives. All over the world, many restrictions and precautions have been introduced to reduce the spread of coronavirus disease 2019 (COVID-19). Ultraviolet C (UV-C) radiation is widely used to disinfect rooms, surfaces, and medical tools; however, this paper presents novel results obtained for modern UV-C light-emitting diodes (LEDs), examining their effect on inhibiting the multiplication of viruses. The main goal of the work was to investigate how to most effectively use UV-C LEDs to inactivate viruses. We showed that UV-C radiation operating at a 275 nm wavelength is optimal for germicidal effectiveness in a time exposure (25–48 s) study: >3 log-reduction with the Kärber method and >6 log-reduction with UV spectrophotometry were noted. We used real-time quantitative reverse transcription polymerase chain reaction (RT-qPCR) to reliably estimate virus infectivity reduction after 275 nm UV-C disinfection. The relative quantification (RQ) of infectious particles detected after 40–48 s distinctly decreased. The irradiated viral RNAs were underexpressed compared to the untreated control virial amplicon (estimated as RQ = 1). In conclusion, this work provides the first experimental data on 275 nm UV-C in the inactivation of human coronavirus OC43 (HoV-OC43), showing the most potent germicidal effect without hazardous effect.

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Wu, Fengbing, Dawei Zhang, Shuzhen Shang, Yiming Zhu, Songlin Zhuang et Jian Xu. « Developing Quantum Dot Phosphor-Based Light-Emitting Diodes for Aviation Lighting Applications ». Journal of Nanomaterials 2012 (2012) : 1–5. http://dx.doi.org/10.1155/2012/629157.

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We have investigated the feasibility of employing quantum dot (QD) phosphor-based light-emitting diodes (LEDs) in aviation applications that request Night Vision Imaging Systems (NVIS) compliance. Our studies suggest that the emerging QD phosphor-based LED technology could potentially be superior to conventional aviation lighting technology by virtue of the marriage of tight spectral control and broad wavelength tunability. This largely arises from the fact that the optical properties of semiconductor nanocrystal QDs can be tailored by varying the nanocrystal size without any compositional changes. It is envisioned that the QD phosphor-based LEDs hold great potentials in cockpit illumination, back light sources of monitor screens, as well as the LED indicator lights of aviation panels.

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Bahadoran, Ashkan, Qinglei Liu, Seeram Ramakrishna, Behzad Sadeghi, Moara Marques De Castro et Pasquale Daniele Cavaliere. « Hydrogen Production as a Clean Energy Carrier through Heterojunction Semiconductors for Environmental Remediation ». Energies 15, n^o 9 (28 avril 2022) : 3222. http://dx.doi.org/10.3390/en15093222.

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Today, as a result of the advancement of technology and increasing environmental problems, the need for clean energy has considerably increased. In this regard, hydrogen, which is a clean and sustainable energy carrier with high energy density, is among the well-regarded and effective means to deliver and store energy, and can also be used for environmental remediation purposes. Renewable hydrogen energy carriers can successfully substitute fossil fuels and decrease carbon dioxide (CO2) emissions and reduce the rate of global warming. Hydrogen generation from sustainable solar energy and water sources is an environmentally friendly resolution for growing global energy demands. Among various solar hydrogen production routes, semiconductor-based photocatalysis seems a promising scheme that is mainly performed using two kinds of homogeneous and heterogeneous methods, of which the latter is more advantageous. During semiconductor-based heterogeneous photocatalysis, a solid material is stimulated by exposure to light and generates an electron–hole pair that subsequently takes part in redox reactions leading to hydrogen production. This review paper tries to thoroughly introduce and discuss various semiconductor-based photocatalysis processes for environmental remediation with a specific focus on heterojunction semiconductors with the hope that it will pave the way for new designs with higher performance to protect the environment.

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Nunes, Barbara Nascimento, Osmando Ferreira Lopes, Antonio Otavio T. Patrocinio et Detlef W. Bahnemann. « Recent Advances in Niobium-Based Materials for Photocatalytic Solar Fuel Production ». Catalysts 10, n^o 1 (16 janvier 2020) : 126. http://dx.doi.org/10.3390/catal10010126.

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The search for renewable and clean energy sources is a key aspect for sustainable development as energy consumption has continuously increased over the years concomitantly with environmental concerns caused by the use of fossil fuels. Semiconductor materials have great potential for acting as photocatalysts for solar fuel production, a potential energy source able to solve both energy and environmental concerns. Among the studied semiconductor materials, those based on niobium pentacation are still shallowly explored, although the number of publications and patents on Nb(V)-based photocatalysts has increased in the last years. A large variety of Nb(V)-based materials exhibit suitable electronic/morphological properties for light-driving reactions. Not only the extensive group of Nb2O5 polymorphs is explored, but also many types of layered niobates, mixed oxides, and Nb(V)-doped semiconductors. Therefore, the aim of this manuscript is to provide a review of the latest developments of niobium based photocatalysts for energy conversion into fuels, more specifically, CO2 reduction to hydrocarbons or H2 evolution from water. Additionally, the main strategies for improving the photocatalytic performance of niobium-based materials are discussed.

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Kovalenko, O. Yu, J. A. Zhuravleva, S. A. Mikaeva et V. V. Nemov. « Changes of lighting characteristics of semiconductor light sources of different constructional performance during operation ». Vestnik MGTU 22, n^o 4 (2019) : 471–76. http://dx.doi.org/10.21443/1560-9278-2019-22-4-471-476.

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