Littérature scientifique sur le sujet « Semiconducting Quantum Materials »
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Articles de revues sur le sujet "Semiconducting Quantum Materials"
Zhang, Dao Hua. « Semiconducting Materials for Photonic Technology ». Materials Science Forum 859 (mai 2016) : 96–103. http://dx.doi.org/10.4028/www.scientific.net/msf.859.96.
Texte intégralCocchi, Caterina, et Holger-Dietrich Saßnick. « Ab Initio Quantum-Mechanical Predictions of Semiconducting Photocathode Materials ». Micromachines 12, no 9 (24 août 2021) : 1002. http://dx.doi.org/10.3390/mi12091002.
Texte intégralBanerjee, Pritam, Chiranjit Roy, Juan Jesús Jiménez, Francisco Miguel Morales et Somnath Bhattacharyya. « Atomically resolved 3D structural reconstruction of small quantum dots ». Nanoscale 13, no 16 (2021) : 7550–57. http://dx.doi.org/10.1039/d1nr00466b.
Texte intégralZentel, Rudolf. « Polymer Coated Semiconducting Nanoparticles for Hybrid Materials ». Inorganics 8, no 3 (11 mars 2020) : 20. http://dx.doi.org/10.3390/inorganics8030020.
Texte intégralMokkath, Junais Habeeb. « Dopant-induced localized light absorption in CsPbX3 (X = Cl, Br, I) perovskite quantum dots ». New Journal of Chemistry 43, no 46 (2019) : 18268–76. http://dx.doi.org/10.1039/c9nj03784e.
Texte intégralReichardt, Sven, et Ludger Wirtz. « Nonadiabatic exciton-phonon coupling in Raman spectroscopy of layered materials ». Science Advances 6, no 32 (août 2020) : eabb5915. http://dx.doi.org/10.1126/sciadv.abb5915.
Texte intégralLiang, Shuang, Ze Ma, Nan Wei, Huaping Liu, Sheng Wang et Lian-Mao Peng. « Solid state carbon nanotube device for controllable trion electroluminescence emission ». Nanoscale 8, no 12 (2016) : 6761–69. http://dx.doi.org/10.1039/c5nr07468a.
Texte intégralBanks, Peter A., Jefferson Maul, Mark T. Mancini, Adam C. Whalley, Alessandro Erba et Michael T. Ruggiero. « Thermoelasticity in organic semiconductors determined with terahertz spectroscopy and quantum quasi-harmonic simulations ». Journal of Materials Chemistry C 8, no 31 (2020) : 10917–25. http://dx.doi.org/10.1039/d0tc01676d.
Texte intégralFeng, Hao-Lin, Wu-Qiang Wu, Hua-Shang Rao, Long-Bin Li, Dai-Bin Kuang et Cheng-Yong Su. « Three-dimensional hyperbranched TiO2/ZnO heterostructured arrays for efficient quantum dot-sensitized solar cells ». Journal of Materials Chemistry A 3, no 28 (2015) : 14826–32. http://dx.doi.org/10.1039/c5ta02269j.
Texte intégralKIM, Jaewook. « Advances in Floating Zone Crystal Growth ». Physics and High Technology 31, no 9 (30 septembre 2022) : 22–25. http://dx.doi.org/10.3938/phit.31.030.
Texte intégralThèses sur le sujet "Semiconducting Quantum Materials"
Flatten, Lucas Christoph. « Quantum electrodynamics of semiconducting nanomaterials in optical microcavities ». Thesis, University of Oxford, 2017. http://ora.ox.ac.uk/objects/uuid:a5f4797f-ea23-49e4-bd1e-2483154508d6.
Texte intégralBandyopadhyay, Avra Sankar. « Light Matter Interactions in Two-Dimensional Semiconducting Tungsten Diselenide for Next Generation Quantum-Based Optoelectronic Devices ». Thesis, University of North Texas, 2020. https://digital.library.unt.edu/ark:/67531/metadc1752376/.
Texte intégralZhang, Yu. « Fabrication, structural and spectroscopic studies of wide bandgap semiconducting nanoparticles of ZnO for application as white light emitting diodes ». Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI046.
Texte intégralThe present thesis studies ZnO nanoparticles embedded in a mesospheric polyacrylic acid (PAA) matrix synthesized via a hydrolysis protocol. The mesospheric ZnO/PAA hybrid structure was previously proved efficient in emitting visible light in a broad range, which results from the deep-level intrinsic defects in ZnO nanocrystals. To further tune the photoluminescence (PL) spectrum and improve the PL quantum yield (PL QY) of the material, metal-doped ZnO and silica-coated ZnO/PAA are fabricated independently. For ZnO doped with metallic elements, the nature, concentration, size and valence of the dopant are found to affect the formation of the mesospheres and consequently the PL and PL QY. Ions larger than Zn2+ with a higher valence tend to induce larger mesospheres and unembedded ZnO nanoparticles. Doping generally leads to the quenching of PL, but the PL spectrum can still be tuned in a wide range (between 2.46 eV and 2.17 eV) without degrading the PL QY by doping small ions at a low doping concentration (0.1 %). For silica-coated ZnO/PAA, an optimal coating correlatively depends on the amount of TEOS and ammonia in the coating process. The amount of TEOS does not affect the crystal structure of ZnO or the PL spectrum of the material, but high concentration of ammonia can degrade the PAA mesospheres and thicken the silica shell. A thin layer of silica that does not absorb too much excitation light but completely covers the mesospheres proves to be the most efficient, with a drastic PL QY improvement of six times. Regarding the application, the materials suffer from thermal quenching at temperatures high up to 100°C, at which white light emitting diodes (WLEDs) generally operates. However, silica-coated ZnO/PAA induces higher emission intensity at room temperature to make up for the thermal quenching
Παππάς, Σπυρίδων. « Ανάπτυξη και χαρακτηρισμός προηγμένων υλικών για νανοδιατάξεις ». Thesis, 2013. http://hdl.handle.net/10889/6374.
Texte intégralThe objective of this Thesis is the growth and the characterization of high tech materials which can be possible candidates for future applications in nanodevices. In the framework of the Thesis, we were mainly focused on the production and the study of magnetic and semiconducting thin films, which are based on oxides of metals and of conventional semiconductors. The magnetic and optical characterizations reveal that these materials, in the form of thin films exhibit new properties with exceptionally large technological interest. In more detail, magnetic Ni/NiO multilayers, semiconducting Cu2O, CuO and NiO thin films, as well as insulating amorphous SiOx thin films with or without embedded Si quantum dots, were produced. The magnetic and/or optical properties of each of the aforementioned thin film categories were studied and their impact on possible future applications was examined. The Ni/NiO multilayers were produced on various substrates with the aid of a single magnetron sputtering head and the natural oxidation process. The produced multilayers were of excellent layering and interface quality. An extended study of both the magnetization and the anisotropy as a function of the temperature and the varying Ni layer thickness was performed. It is found from the magnetic investigations, that the multilayers with thin Ni layers exhibit a trend for perpendicular magnetic anisotropy, which is attributed to the considerable positive surface anisotropy of the Ni/NiO interfaces. The semiconducting copper and nickel oxide thin films were produced via the oxidation of the corresponding metallic films. The amorphous SiOx films were fabricated via the reactive sputtering method. Part of the as deposited films was fully oxidized at 950 oC under the ambient air environment, whereas another part was thermally decomposed under vacuum conditions at 1000 oC. Electron microscopy investigations reveal that upon the thermal decomposition process of the films, embedded Si nanocrystals are formed in the amorphous matrix of the Si oxide. The Cu and Ni oxide films exhibited quantum confinement effects, which were studied via the UV-VIS spectroscopy. The recorded spectra reveal that the absorption edge shifts towards higher energies, as the layer thickness is reduced and becomes comparable with the excitonic Bohr radius of the material. The Si oxide thin films, after the thermal decomposition treatment are found to exhibit photoluminescence at the region between 1.3 and 1.5 eV which is originated to the excitonic recombination in the embedded Si quantum dots. Finally, it is deduced that conventional materials like metals, semiconductors and the oxides of them, can exhibit new properties when they are prepared in the form of nanostructure. These nanostructures can attract a lot of interest for possible applications in nanodevices with new but completely controllable properties.
Livres sur le sujet "Semiconducting Quantum Materials"
G, Snyder Paul, et United States. National Aeronautics and Space Administration., dir. Materials, structures, and devices for high-speed electronics : Final report, grant period, January 1, 1981 - December 31, 1992. [Washington, DC : National Aeronautics and Space Administration, 1992.
Trouver le texte intégralG, Snyder Paul, et United States. National Aeronautics and Space Administration., dir. Materials, structures, and devices for high-speed electronics : Final report, grant period, January 1, 1981 - December 31, 1992. [Washington, DC : National Aeronautics and Space Administration, 1992.
Trouver le texte intégralPanigrahi, Muktikanta, et Arpan Kumar Nayak. Polyaniline based Composite for Gas Sensors. IOR PRESS, 2021. http://dx.doi.org/10.34256/ioriip212.
Texte intégralChapitres de livres sur le sujet "Semiconducting Quantum Materials"
Pattanayak, Dillip Kumar, Arun Kumar Padhy, Lokesh Kumar Prusty, Ranjan Kumar Bhuyna et Samita Pattanayak. « Hidden Treasures of Semiconducting Materials for Quantum Computing ». Dans Advances in Systems Analysis, Software Engineering, and High Performance Computing, 132–53. IGI Global, 2022. http://dx.doi.org/10.4018/978-1-7998-9183-3.ch009.
Texte intégral« Self-organized and quantum domain structures ». Dans Microscopy of Semiconducting Materials, 115–78. CRC Press, 2000. http://dx.doi.org/10.1201/9781482268690-8.
Texte intégral« Quantum Dots : Properties and Applications ». Dans Materials Research Foundations, 331–48. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901250-13.
Texte intégralCockayne, D. J. H., X. Z. Liao et J. Zou. « The morphology and composition of quantum dots ». Dans Microscopy of Semiconducting Materials 2001, 77–83. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-17.
Texte intégralShen, H., et F. H. Pollak. « Quantum Wells ». Dans Concise Encyclopedia of Semiconducting Materials & ; Related Technologies, 385–88. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-08-034724-0.50093-7.
Texte intégralErnst, F., O. Kienzle, O. G. Schmidt, K. Eberl, J. Zhu, K. Brunner et G. Abstreiter. « Ge-Si Nanostructures for Quantum-Effect Electronic Devices ». Dans Microscopy of Semiconducting Materials 2001, 167–76. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-35.
Texte intégralMigliorato, M. A., A. G. Cullis, M. Fearn et J. H. Jefferson. « Atomistic modelling of strain relaxation effects in quantum dots ». Dans Microscopy of Semiconducting Materials 2001, 97–100. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-21.
Texte intégralKeast, V. J., N. Sharma et C. J. Humphreys. « Energy-loss spectroscopy of GaN alloys and quantum wells ». Dans Microscopy of Semiconducting Materials 2001, 259–62. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-54.
Texte intégralZhi, D., D. W. Pashley, B. A. Joyce et T. S. Jones. « The structure of uncapped and capped InAs/GaAs quantum dots ». Dans Microscopy of Semiconducting Materials 2001, 89–92. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-19.
Texte intégralLeifer, K., B. Dwir, Y. Ducommun, D. Y. Oberli et E. Kapon. « Localisation and transport in quantum wires with longitudinal bandgap variation ». Dans Microscopy of Semiconducting Materials 2001, 113–18. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-24.
Texte intégralActes de conférences sur le sujet "Semiconducting Quantum Materials"
Xiulai Xu, D. A. Williams, J. R. A. Cleaver, Debao Zhou et C. Stanley. « InAs quantum dots for quantum information processing ». Dans 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511396.
Texte intégralFu, L., P. Lever, P. L. Gareso, M. Buda, H. H. Tan, C. Jagadish, P. Reece et M. gal. « Impurity-free vacancy disordering of quantum wells and quantum dots for optoelectronic/photonic integrated circuits ». Dans 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511397.
Texte intégralLee, Kwang-Sup. « Semiconducting quantum dots with optoelectronic and photonic functions (Conference Presentation) ». Dans Organic Photonic Materials and Devices XXI, sous la direction de Christopher E. Tabor, François Kajzar et Toshikuni Kaino. SPIE, 2019. http://dx.doi.org/10.1117/12.2514004.
Texte intégralTsuya, Daiju, Masaki Suzuki, Yoshinobu Aoyagi et Koji Ishibashi. « Quantum dot transport of semiconducting single-wall carbon nanotubes ». Dans 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.h-4-2.
Texte intégralYan, B., Z. Yang, Y. Shi, J. L. Liu, R. Zhang, Y. D. Zheng et K. L. Wang. « Structural characteristics of self-assembled Ge/Si quantum dot superlattices ». Dans 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511403.
Texte intégralJarillo-Herrero, Pablo. « A Few Electron-Hole Semiconducting Carbon Nanotube Quantum Dot ». Dans ELECTRIC PROPERTIES OF SYNTHETIC NANOSTRUCTURES : XVII International Winterschool/Euroconference on Electronic Properties of Novel Materials. AIP, 2004. http://dx.doi.org/10.1063/1.1812154.
Texte intégralGong, Q., P. Offermans, R. Noetzel, P. M. Koenrad et J. H. Wolter. « Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy ». Dans 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511399.
Texte intégralHe, J., P. Offermans, P. M. Koenrad, Q. Gong, G. J. Hamhuis, T. J. Eijekmans et J. H. Wolter. « Structural and optical properties of columnar (In,Ga)As quantum dots on GaAs (100) ». Dans 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511400.
Texte intégralTerashita, Y., M. Okazaki, K. Kamimura et K. Fujiwara. « Lasing wavelength of GaAs single quantum well diodes with thin AlAs carrier blocking layers ». Dans 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511433.
Texte intégralXu, B., Z. G. Wang, Y. H. Chen, P. Jin, X. L. Ye, H. Y. Liu, Z. Y. Zhang et al. « Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices ». Dans 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511398.
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