Littérature scientifique sur le sujet « Quantum Confinement Effect (QCE) »
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Articles de revues sur le sujet "Quantum Confinement Effect (QCE)"
RATH, S., A. K. DASH, S. N. SAHU et S. NOZAKI. « QUANTUM CONFINEMENT EFFECT IN HgTe NANOCRYSTALS AND VISIBLE LUMINESCENCE ». International Journal of Nanoscience 03, no 03 (juin 2004) : 393–401. http://dx.doi.org/10.1142/s0219581x04002176.
Texte intégralLiao, Lianxing, Kunhua Quan, Xiangshi Bin, Ruosheng Zeng et Tao Lin. « Bandgap and Carrier Dynamic Controls in CsPbBr3 Nanocrystals Encapsulated in Polydimethylsiloxane ». Crystals 11, no 9 (17 septembre 2021) : 1132. http://dx.doi.org/10.3390/cryst11091132.
Texte intégralFan, Libo, Hongwei Song, Haifeng Zhao, Guohui Pan, Lina Liu, Biao Dong, Fang Wang et al. « CdS/Cyclohexylamine Inorganic–Organic Hybrid Semiconductor Nanofibers with Strong Quantum Confinement Effect ». Journal of Nanoscience and Nanotechnology 8, no 8 (1 août 2008) : 3914–20. http://dx.doi.org/10.1166/jnn.2008.18345.
Texte intégralIqbal, Anwar, Usman Saidu, Farook Adam, Srimala Sreekantan, Normawati Jasni et Mohammad Norazmi Ahmad. « The Effects of Zinc Oxide (ZnO) Quantum Dots (QDs) Embedment on the Physicochemical Properties and Photocatalytic Activity of Titanium Dioxide (TiO2) Nanoparticles ». Journal of Physical Science 32, no 2 (25 août 2021) : 71–85. http://dx.doi.org/10.21315/jps2021.32.2.6.
Texte intégralShim, Jae Hyun, et Nam Hee Cho. « Photo- and Electroluminescence of Hydrogenated Nanocrystalline Si Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques ». Materials Science Forum 510-511 (mars 2006) : 958–61. http://dx.doi.org/10.4028/www.scientific.net/msf.510-511.958.
Texte intégralCao, Yunqing, Ping Zhu, Dongke Li, Xianghua Zeng et Dan Shan. « Size-Dependent and Enhanced Photovoltaic Performance of Solar Cells Based on Si Quantum Dots ». Energies 13, no 18 (16 septembre 2020) : 4845. http://dx.doi.org/10.3390/en13184845.
Texte intégralFariborz, Amir H., et Renata Jora. « Examining a possible cascade effect in chiral symmetry breaking ». Modern Physics Letters A 32, no 02 (29 décembre 2016) : 1750008. http://dx.doi.org/10.1142/s0217732317500080.
Texte intégralKuvshinov, V. I., et E. G. Bagashov. « Evolution of Colour in QCD and Informational Approach to Quantum Measurement ». Nonlinear Phenomena in Complex Systems 22, no 4 (10 décembre 2019) : 330–35. http://dx.doi.org/10.33581/1561-4085-2019-22-4-330-335.
Texte intégralMir, Feroz A., Owais I. Mir et Rayees A. Zargar. « Structural, Morphological, Vibrational, Thermal and Optical Properties of ZnS Quantum Dots in the Polymer Matrix ». Current Alternative Energy 3, no 1 (28 novembre 2019) : 50–58. http://dx.doi.org/10.2174/2405463103666190704160914.
Texte intégralCetinel, A., N. Artunç, G. Sahin et E. Tarhan. « Influence of applied current density on the nanostructural and light emitting properties of n-type porous silicon ». International Journal of Modern Physics B 29, no 15 (25 mai 2015) : 1550093. http://dx.doi.org/10.1142/s0217979215500939.
Texte intégralThèses sur le sujet "Quantum Confinement Effect (QCE)"
Koulentianos, Dimitrios. « Quantum confinement effect in materials for solar cell applications ». Thesis, Uppsala universitet, Materialteori, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-237189.
Texte intégralSun, Xiangzhong 1968. « The effect of quantum confinement on the thermoelectric figure of merit ». Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/9308.
Texte intégralIncludes bibliographical references (p. 161-165).
The thermoelectric figure of merit (Z) determines the usefulness of a material for thermoelectric energy conversion applications. Since the 1960's, the best thermoelectric material has been Bi2Te3 alloys, with a ZT of 1.0 at a temperature ofT = 300 K. The advancement of nano-scale technologies has opened up the possibility of engineering materials at nano-scale dimensions to achieve low-dimensional thermoelectric structures which may be superior to their bulk forms. In this thesis, I established the basis of the low dimensional thermoelectric transport principle in the Si/Si1-xGex quantum well superlattice (two-dimensional) system and in the Bi quantum wire (one-dimensional) system. In bulk form, Si1_xGex is a promising thermoelectric material for high temperature applications. The Si/Si1 _xGex quantum well superlattice structures are studied based on their electronic band structures using semiclassical transport theory. Detailed subband structures are considered in an infinite series of finite height quantum wells and barriers. A significant enhancement of the thermoelectric figure of merit is expected. Based on my calculations, experimental studies are designed and performed on MBE grown Si/Sii -xGex quantum well superlattice structures. The experimental results are found to be consistent with theoretical predictions and indicate a significant enhancement of Z within the quantum wells over bulk values. The bismuth quantum wire system is a one-dimensional (ID) thermoelectric system. Bismuth as a semimetal is not a good thermoelectric material in bulk form becamm of the approximate cancellation between the electron and hole contributions to the Seebeck coefficient. However, quantum confinement can be introduced by making Bi nanowires to yield a ID semiconductor. ID transport properties are calculated along the principal crystallographic directions. By carefully tailoring the Bi wire size and carrier concentration, substantial enhancement in Z is expected. A preliminary experimental study of Bi nanowire arrays is also presented.
by Xiangzhong Sun.
Ph.D.
Reynolds, Bryan. « Electronic Transport Properties of Nanonstructured Semiconductors : Temperature Dependence and Size Effects ». University of Cincinnati / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1463130513.
Texte intégralLi, Li. « Study of Metal-Insulator-Metal Diodes for Photodetection ». University of Dayton / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1367319217.
Texte intégralMorioka, Naoya. « Fundamental Study on Carrier Transport in Si Nanowire MOSFETs with Smooth Nanowire Surfaces ». 京都大学 (Kyoto University), 2014. http://hdl.handle.net/2433/188599.
Texte intégralRibeiro, Márcia. « Estudo das propriedades estruturais e ópticas em materiais nanoestruturados a base de silício ». Universidade de São Paulo, 2009. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-20072009-155431/.
Texte intégralThe aim of this doctorate thesis is to enhance the knowledge in the research conducted along the Master degree based on the characterization and study of the structural and luminescent properties of silicon rich silicon oxynitride films (SiOxNy:H) deposited at low temperature by Plasma Enhanced Chemical Vapor Deposition (PECVD). The results of this study indicated that silicon rich SiOxNy:H films present luminescence in the visible spectra range with intensity and frequency in correlation with the silicon excess. The results suggested that the silicon excess in the SiOxNy:H matrix is confined in nanometric silicon clusters responsible for the to quantum size effects as well as for radiactive states at the interface of the silicon clusters with the insulating matrix. In the present work in order to evaluate the effect of phase separation, quantum size and interface effects si licon based nanostructured systems presenting total and partial phase separation were produced and their structural and optical properties were characterized in order to correlate them with the silicon rich films ones. In this way multilayers with few nanometers thick a-Si layers with dielectric materials were produced. The mixture of the layers was promoted by ion bombardment in some of these multilayers. The study of these structures permitted the characterization of structural and optical properties of materials with total and partial phase separation with the purpose of comparing them to the silicon-rich silicon oxynitride films characteristics. In order to analyze the interface influence in the optical properties, multilayers systems with two different dielectric materials, silicon oxide and silicon nitride, were fabricated. The dielectric layer thickness was kept constant while the silicon layer was varied in order to study the confinement effect. The characterization was done utilizing UV-Vis optical absorption, infrared absorption (FTIR), Raman spectroscopy, Photoluminescence (PL), X-ray absorption near edge spectroscopy (XANES) and high-resolution transmission electron microscopy (HRTEM) techniques. From the results analysis it was concluded that confinement is essent ial for the existence of luminescent 9 emission although the type of interface also influences the energy and intensity of the emission. The comparative analysis with the multilayers permitted to verify that the silicon-rich silicon oxynitride films present, as deposited, partial phase separation and that the thermal treatments promotes silicon aggregation thus increasing the phase separation.
Mouillon, Alexandre. « Couples de spin-orbite dans une couche de métal ferromagnétique ultramince comprise entre deux oxydes : confinement quantique et effet Rashba ». Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAY034.
Texte intégralExperimentally demonstrated in the early 2010's, spin-orbite torques (SOTs) very quickly generated a very strong interest in the magnetism and spin electronics community. Indeed, they allow, in a heavy metal / ferromagnetic metal / oxide (HM/FM/Ox) multilayer, to manipulate the magnetization of the ferromagnetic layer (FM) by injecting an in-plane current. Noting that the FM/Ox bilayer corresponds to half of a typical stack used in MRAM memory cells (Magnetic Random Access Memory), we understand that this mechanism is very interesting for writing the free layer of these cells. Indeed, the writing current no longer crosses the tunnel barrier, which naturally responds to some of the limitations of current MRAMs. However, the physical interpretation of these phenomena has proved to be particularly complex. These torques have two components, generally called "Field-like", FL, and "Damping-like", DL. While initially, theoretical studies predicted that the DL component was mainly due to a volume effect in the HM layer, and the FL component was mainly due to an interface effect, more recent experimental studies have shown that it is not so simple to separate these two contributions.In this thesis work, we have chosen an original approach that allows us to study only one of the two contributions. To do so, we have chosen to focus on the interfacial contribution by studying Ox1/FM/Ox2 samples. We were thus able to highlight in these stacks the presence of SOTs, which was not so obvious in a structure that did not contain heavy metal and also had a strong symmetry. On the other hand, we were able to show that only the FL component of these couples was present. The unexpected behaviour of this FL-SOT as a function of the thickness of the FM layer led us to propose a model based on the combination of a Rahsba interfacial effect and a quantum confinement effect due to the very thin thickness of conductive material in these multilayers
Yoshioka, Hironori. « Fundamental Study on Si Nanowires for Advanced MOSFETs and Light-Emitting Devices ». 京都大学 (Kyoto University), 2010. http://hdl.handle.net/2433/123341.
Texte intégralRamanathan, Sivakumar. « Optical and electrical properties of compound and transition metal doped compound semiconductor nanowires ». VCU Scholars Compass, 2009. http://scholarscompass.vcu.edu/etd/1667.
Texte intégralHory, Marie Anne. « Contribution à l'étude de la luminescence du silicium poreux : analyse infrarouge de la passivation de surface et effets de la polarisation électrique ». Université Joseph Fourier (Grenoble), 1995. http://www.theses.fr/1995GRE10150.
Texte intégralLivres sur le sujet "Quantum Confinement Effect (QCE)"
1941-, Kuchar F., Heinrich H, Bauer G. 1942- et Österreichische Physikalische Gesellschaft, dir. Localization and confinement of electrons in semiconductors : Proceedings of the sixth international winter school, Mauterndorf, Austria, February 19-23, 1990. Berlin : Springer-Verlag, 1990.
Trouver le texte intégralLi, Jing, et Xiao-Ying Huang. Nanostructured crystals : An unprecedented class of hybrid semiconductors exhibiting structure-induced quantum confinement effect and systematically tunable properties. Sous la direction de A. V. Narlikar et Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.16.
Texte intégralHeinrich, H., et F. Kuchar. Localization and Confinement of Electrons in Semiconductors : Proceedings of the 6th International Winter School Mauterndorf, Austria, February 19-23, (Springer Series in Solid-State Sciences). Springer, 1991.
Trouver le texte intégralRoditchev, D., T. Cren, C. Brun et M. V. Milošević. Local-Scale Spectroscopic Studies of Vortex Organization in Mesoscopic Superconductors. Sous la direction de A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.2.
Texte intégralChapitres de livres sur le sujet "Quantum Confinement Effect (QCE)"
Girvin, S. M., et A. H. MacDonald. « Off-Diagonal Long-Range Order, Oblique Confinement, and the Fractional Quantum Hall Effect ». Dans Quantum Hall Effect : A Perspective, 261–64. Dordrecht : Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-010-9709-3_31.
Texte intégralWei, H. P., D. C. Tsui et A. M. M. Pruisken. « Metal-Insulator Transition in the Integer Quantum Hall Effect ». Dans Localization and Confinement of Electrons in Semiconductors, 154–61. Berlin, Heidelberg : Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-84272-6_17.
Texte intégralEisenstein, J. P. « New Condensed States in the Fractional Quantum Hall Effect ». Dans Localization and Confinement of Electrons in Semiconductors, 183–91. Berlin, Heidelberg : Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-84272-6_20.
Texte intégralYu, Peter Y., et Manuel Cardona. « Effect of Quantum Confinement on Electrons and Phonons in Semiconductors ». Dans Fundamentals of Semiconductors, 469–551. Berlin, Heidelberg : Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-26475-2_9.
Texte intégralYu, Peter Y., et Manuel Cardona. « Effect of Quantum Confinement on Electrons and Phonons in Semiconductors ». Dans Fundamentals of Semiconductors, 457–535. Berlin, Heidelberg : Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-662-03848-2_9.
Texte intégralYu, Peter Y., et Manuel Cardona. « Effect of Quantum Confinement on Electrons and Phonons in Semiconductors ». Dans Fundamentals of Semiconductors, 457–535. Berlin, Heidelberg : Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-662-03313-5_9.
Texte intégralYu, Peter Y., et Manuel Cardona. « Effect of Quantum Confinement on Electrons and Phonons in Semiconductors ». Dans Fundamentals of Semiconductors, 469–551. Berlin, Heidelberg : Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-00710-1_9.
Texte intégralAkimoto, R., Y. Kinpara et K. Akita. « Large quantum confinement effect of conduction electrons in ZnSe/BeTe type II heterostructures ». Dans Springer Proceedings in Physics, 471–72. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_220.
Texte intégralFontein, P. F., J. A. Kleinen, P. Hendriks, F. A. P. Blom, J. H. Wolter, H. G. M. Lochs, F. A. J. M. Driessen et L. J. Giling. « The Spatial Potential Distribution in GaAs/AlxGa1-xAs Heterostructures Under Quantum Hall Conditions Studied with the Linear Electro-Optic Effect ». Dans Localization and Confinement of Electrons in Semiconductors, 162–67. Berlin, Heidelberg : Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-84272-6_18.
Texte intégralRamalingam, Gopal, Poopathy Kathirgamanathan, Ganesan Ravi, Thangavel Elangovan, Bojarajan Arjun kumar, Nadarajah Manivannan et Kaviyarasu Kasinathan. « Quantum Confinement Effect of 2D Nanomaterials ». Dans Quantum Dots - Fundamental and Applications. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.90140.
Texte intégralActes de conférences sur le sujet "Quantum Confinement Effect (QCE)"
Miller, D. A. B. « Physics and applications of room temperature excitonic electroabsorption in quantum wells ». Dans OSA Annual Meeting. Washington, D.C. : Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.ws1.
Texte intégralTada, Kunio, Shinji Nishimura, Yuen Chuen Chan et Takuya Ishikawa. « Polarization-Independent Optical Waveguide Switch with Parabolic Potential Quantum Well ». Dans Photonic Switching. Washington, D.C. : Optica Publishing Group, 1991. http://dx.doi.org/10.1364/phs.1991.fb3.
Texte intégralShevchenko, Vladimir. « Quantum measurements and chiral magnetic effect ». Dans Xth Quark Confinement and the Hadron Spectrum. Trieste, Italy : Sissa Medialab, 2013. http://dx.doi.org/10.22323/1.171.0082.
Texte intégralLugli, Paolo, Paoli Bordone, S. Gualdi et Stephen M. Goodnick. « Effect of phonon confinement in quantum well systems ». Dans Semi - DL tentative, sous la direction de Robert R. Alfano. SPIE, 1990. http://dx.doi.org/10.1117/12.20702.
Texte intégralVayssieres, Lionel. « One-dimensional confinement effect in hematite quantum rod arrays ». Dans SPIE Optics + Photonics, sous la direction de Lionel Vayssieres. SPIE, 2006. http://dx.doi.org/10.1117/12.678301.
Texte intégralDing, S. A., M. Ikeda, M. Fukuda, S. Miyazaki et M. Hirose. « Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots ». Dans 1998 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1998. http://dx.doi.org/10.7567/ssdm.1998.c-1-7.
Texte intégralSaib, Waheeda, Petros Wallden et Ismail Akhalwaya. « The Effect of Noise on the Performance of Variational Algorithms for Quantum Chemistry ». Dans 2021 IEEE International Conference on Quantum Computing and Engineering (QCE). IEEE, 2021. http://dx.doi.org/10.1109/qce52317.2021.00020.
Texte intégralBarbagiovanni, Eric G., David J. Lockwood, Raimundo N. Costa Filho, Lyudmila V. Goncharova et Peter J. Simpson. « Quantum confinement in Si and Ge nanostructures : effect of crystallinity ». Dans Photonics North 2013, sous la direction de Pavel Cheben, Jens Schmid, Caroline Boudoux, Lawrence R. Chen, André Delâge, Siegfried Janz, Raman Kashyap, David J. Lockwood, Hans-Peter Loock et Zetian Mi. SPIE, 2013. http://dx.doi.org/10.1117/12.2036323.
Texte intégralArora, Manju, Santosh Singh et Sukhvir Singh. « Quantum confinement effect on photoluminescence of nanocrystalline ZnO thin films ». Dans 16th International Workshop on Physics of Semiconductor Devices, sous la direction de Monica Katiyar, B. Mazhari et Y. N. Mohapatra. SPIE, 2012. http://dx.doi.org/10.1117/12.927415.
Texte intégralWatanabe, Hiroshi, Ken Uchida et Atsuhiro Kinoshita. « Quantum Confinement Effect of Ultrathin-SOI on double-gate-nMOSFETs ». Dans 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.d-3-4.
Texte intégral