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Articles de revues sur le sujet « Pseudomorphic overlayers »

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Auteur : Grafiati
Publié le 11 mars 2023

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1

SINGH, RANBER. « MAGNETIC COUPLING IN PSEUDOMORPHIC 2ML OVERLAYERS AND SANDWICH SUPERLATTICE STRUCTURES OF Cr, Mn, Fe, Co AND Ni ON FCC Cu(001) ». International Journal of Modern Physics B 24, no 04 (10 février 2010) : 405–12. http://dx.doi.org/10.1142/s0217979210055007.

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The magnetic coupling in pseudomorphic overlayer and sandwich structures of 2ML magnetic ultrathin films on Cu (001) substrate is investigated by using spin-polarized density functional theory. The 2ML magnetic overlayers have significant magnetic moment except CrNi overlayer for which magnetic moment is very small (0.004 μB/ atom ). The overlayers having one layer of Cr turn out to be antiferromagnetically coupled except CrNi/Cu overlayer which has ferromagnetic coupling. All other overlayers have ferromagnetic coupling. In contrast to ferromagnetic MnMn/Cu overlayer, the Cu/MnMn/Cu sandwich has antiferromagnetic coupling. Similar to CrFe/Cu overlayer, the Cu/CrFe/Cu sandwich has antiferromagnetic coupling, while all other sandwiches have ferromagnetic coupling. The sandwiched structures have reduced magnetic moment as compared to their overlayer counterparts. The MnMn , MnFe , and MnCo sandwiches have highly reduced magnetic moment as compared to their overlayer counterparts.
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2

Dodson, Brian W. « Strain-induced surface segregation and ordering in pseudomorphic metal-alloy overlayers ». Physical Review B 36, no 12 (15 octobre 1987) : 6288–91. http://dx.doi.org/10.1103/physrevb.36.6288.

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3

Sham, T. K. « Mn 3s multiplet splitting of pseudomorphic Mn overlayers on Ru(001) ». Journal of Vacuum Science & ; Technology B : Microelectronics and Nanometer Structures 14, no 4 (juillet 1996) : 3199. http://dx.doi.org/10.1116/1.588807.

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4

Kibler, L. A., A. M. El-Aziz et D. M. Kolb. « Electrochemical behaviour of pseudomorphic overlayers : Pd on Au(1 1 1) ». Journal of Molecular Catalysis A : Chemical 199, no 1-2 (mai 2003) : 57–63. http://dx.doi.org/10.1016/s1381-1169(03)00018-9.

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5

Légaré, P., G. F. Cabeza et N. J. Castellani. « Numerical Simulation of Pt Overlayers on Ni(111) and Co(0001) ». Surface Review and Letters 05, no 02 (avril 1998) : 581–88. http://dx.doi.org/10.1142/s0218625x98000967.

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The growth of pseudomorphic Pt layers (from one to four) on Ni(111) and Co(0001) has been investigated by the ECT–BFS method. The behaviors on the two substrates are very similar. The growth of the first layer appears to be highly favorable as the energy of the system is negative. Higher coverages could be stabilized with huge relaxations perpendicularly to the surface. The evolution of the plane-by-plane energies (separated in stress and chemical contributions) and relaxations during the growth is presented and discussed. The always-stabilizing chemical interaction at the interface makes it likely that interdiffusion of metals could be a competing mechanism.
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6

Lischka, Markus, Christian Mosch et Axel Groß. « Tuning catalytic properties of bimetallic surfaces : Oxygen adsorption on pseudomorphic Pt/Ru overlayers ». Electrochimica Acta 52, no 6 (janvier 2007) : 2219–28. http://dx.doi.org/10.1016/j.electacta.2006.03.113.

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7

Pallassana, Venkataraman, Matthew Neurock, Lars B. Hansen, Bjørk Hammer et Jens K. Nørskov. « Theoretical analysis of hydrogen chemisorption on Pd(111), Re(0001) andPdML/Re(0001),ReML/Pd(111)pseudomorphic overlayers ». Physical Review B 60, no 8 (15 août 1999) : 6146–54. http://dx.doi.org/10.1103/physrevb.60.6146.

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8

Golfetto, E., A. Baraldi, M. Pozzo, D. Alfè, A. Sala, P. Lacovig, E. Vesselli, S. Lizzit, G. Comelli et R. Rosei. « Determining the Chemical Reactivity Trends of Pd/Ru(0001) Pseudomorphic Overlayers : Core-Level Shift Measurements and DFT Calculations ». Journal of Physical Chemistry C 114, no 1 (27 octobre 2009) : 436–41. http://dx.doi.org/10.1021/jp908568v.

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9

Pallassana, Venkataraman, Matthew Neurock et George W. Coulston. « Theoretical Density Functional Analysis of Maleic Anhydride Chemisorption on Pd(111), Re(0001), and Bimetallic PdML/Re(0001) and PdML/Mo(110) Pseudomorphic Overlayers ». Journal of Physical Chemistry B 103, no 42 (octobre 1999) : 8973–83. http://dx.doi.org/10.1021/jp991519o.

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10

Aitchison, Hannah, Nikolaus Meyerbröker, Tien-Lin Lee, Jörg Zegenhagen, Thomas Potter, Herbert Früchtl, Izabela Cebula et Manfred Buck. « Underpotential deposition of Cu on Au(111) from neutral chloride containing electrolyte ». Physical Chemistry Chemical Physics 19, no 35 (2017) : 24146–53. http://dx.doi.org/10.1039/c7cp04244b.

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11

Zhou, Zihao, Bradley F. Habenicht, Qinlin Guo, Zhen Yan, Ye Xu, Li Liu et D. Wayne Goodman. « Graphene moiré structure grown on a pseudomorphic metal overlayer supported on Ru(0001) ». Surface Science 611 (mai 2013) : 67–73. http://dx.doi.org/10.1016/j.susc.2013.01.016.

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12

SCHIEFFER, P., C. KREMBEL, M. C. HANF, G. GEWINNER et Y. GAUTHIER. « HUGE MAGNETOVOLUME EFFECT IN AN INVERTED Mn LAYER ON Ag(001) STUDIED BY LEED ». Surface Review and Letters 09, no 03n04 (juin 2002) : 1431–36. http://dx.doi.org/10.1142/s0218625x02004013.

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The surface structure obtained by deposition of a Ag monolayer on the ideal c(2 × 2) antiferromagnetic Mn monolayer on Ag(001) at 100 K and subsequent annealing at room temperature is determined by low energy electron diffraction. It is established that this system is actually a good realization of an inverted monolayer, i.e. a pseudomorphic Ag/Mn/Ag(001) structure that corresponds to a reversed composition of the two topmost layers with respect to the Mn overlayer. The Ag–Mn and Mn–Ag interlayer distances, d12 = 1.97 ± 0.015 Å and d23 = 1.97 ± 0.02 Å respectively, indicate only a fairly small contraction of ~ 3.5% (~ 1.5%) with respect to the ideal Ag bulk lattice (Mn monolayer on top) as compared to ~ 10% expected from atomic radii in bulk Mn and Ag. This clearly reveals a spectacular magnetovolume effect related to the high spin state of Mn in this two-dimensional structure.
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13

CABEZA, G. F., N. J. CASTELLANI et P. LÉGARÉ. « THEORETICAL STUDY OF CO ADSORPTION ON Ni(111), Pt(111) AND Pt/Ni(111) SURFACES ». Surface Review and Letters 06, no 03n04 (juin 1999) : 369–81. http://dx.doi.org/10.1142/s0218625x99000378.

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CO adsorption on a pseudomorphic Pt overlayer supported by Ni (111) has been studied with the use of extended Huckel calculations. Experimental information on the pure Pt (111) and Ni (111) single crystals was employed to select a consistent parameter set for our bimetallic system. This gives a good description of the chemisorption bond changes between the various systems considered in our study. The CO chemisorption energy on Pt/Ni (111) was found to be lowered in comparison with Pt (111) and Ni (111), in good agreement with experimental data on Pt-rich Pt–Ni surface alloys. This observation could be justified by the electronic changes of the Pt states (valence band broadening and decreasing density at the Fermi level). Indeed, they induce, in comparison with the pure substrates, a repulsion between Pt and CO although the 2π* population of the chemisorbed molecule increases. This points to the necessity of going beyond arguments based on an analysis of the 5σ donation and 2π* backdonation for a complete description of the chemisorption bond.
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14

Patel, C. J., Q. X. Zhao, O. Nur et M. Willander. « Photoluminescence of pseudomorphic SiGe formed by 74Ge+ ion implantation in the overlayer of silicon-on-insulator material ». Applied Physics Letters 72, no 23 (8 juin 1998) : 3047–49. http://dx.doi.org/10.1063/1.121536.

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15

Hung, C. Y., M. V. Weckwerth, M. R. Visokay, Y. C. Pao et J. S. Harris. « Growth of GaAS and InAlAs on High Quality, Epitaxial, NiAl Metal Film ». MRS Proceedings 399 (1995). http://dx.doi.org/10.1557/proc-399-537.

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ABSTRACTSuccess in incorporating single crystal, epitaxial metal layers into semiconductors will have a significant impact on electronic and optical devices. The growth of GaAs on (001) pseudomorphic NiAl/GaAs by molecular beam epitaxy has been studied using transmission electron microscopy. The island growth of GaAs on pseudomorphic (lattice matched) NiAl is the origin of the formation of stacking faults and microtwins in the GaAs overlayer. The GaAs islands are considered to be due to heterogeneous nucleation, which occurs more easily at the corner of a step on a strained metal film. Growth of almost twin free In0.25Al0.75As on thick, lattice relaxed, epitaxial NiAl films has been achieved, which supplying useful information for the investigation of the possible factors causing poor quality of GaAs overlayers.
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16

Kolb, D. M., R. J. Randler, R. I. Wielgosz et J. C. Ziegler. « The Initial Stages of Metal Deposition on Metal and Semiconductor Electrodes Studied byIn SituStm ». MRS Proceedings 451 (1996). http://dx.doi.org/10.1557/proc-451-19.

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ABSTRACTThe deposition of Cu onto Au(100) and of Pb onto n- Si(111) electrodes from aqueous solutions has been monitoredin situby scanning tunneling microscopy. In the first case, a bcc structure of the Cu overlayer is observed, which allows pseudomorphic growth on Au(100) up to the 10th layer. Then a slow structural transition to fee begins. In contrast, Pb on Si(111) is shown to deposit as 3D crystallites with flat (111) terminated surfaces.
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17

Chen, L. J., H. C. Cheng et W. T. Lin. « Epitaxial Growth of Transition Metal Silicides on Silicon ». MRS Proceedings 54 (1985). http://dx.doi.org/10.1557/proc-54-245.

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ABSTRACTRecent progresses in the epitaxial growth of refractory metal suicides, FeSi2 and manganese suicides on silicon are reviewed.The formation and structures of epitaxial suicides are described. Factors affecting the suicide epitaxy are examined. The lattice match criteria for the growth of epitaxial suicides are assessed. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed. The properties and possible applications of epitaxial suicides are summarized. Prospects for the study of epitaxial suicides are addressed.
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18

Gossmann, H. J., et L. C. Feldman. « THE INFLUENCE OF RECONSTRUCTION ON THE INITIAL STAGES OF SILICON MOLECULAR BEAM EPITAXY ». MRS Proceedings 56 (1985). http://dx.doi.org/10.1557/proc-56-33.

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AbstractHigh energy ion scattering/channeling and low energy electron diffraction are usedfor an investigation of the initial stages of interface formation during Si homoepitaxy. We find a strong dependence of the atomic. reordering – a necessary condition for pseudomorphic growth – on substrate surface, deposition temperature and Si coverage: (1) Si deposition at 300 K reorders the Si(100) substrate reconstruction in a layer by layer manner. In contrast Si( 111) is unaffected by Si deposition at that temperature. This difference between Si(100) and Si( 111) can be understood in terms of different structural models. (2) On both surfaces deposition at 300 K results in a disordered overlayer. (3) As a direct consequence of the dependence of the reordering on reconstruction we find a lower epitaxial temperature (≈570 K) for Si(100) than for Si(l 11) (≈790 K).
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