Bibliographies thématiques / Power semicondutor

Littérature scientifique sur le sujet « Power semicondutor »

Auteur : Grafiati
Publié le 14 mars 2023

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Articles de revues sur le sujet "Power semicondutor"

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Arif, M. S., S. M. Ayob et Z. Salam. « Asymmetrical Nine-Level Inverter Topology with Reduce Power Semicondutor Devices ». TELKOMNIKA (Telecommunication Computing Electronics and Control) 16, no 1 (1 février 2018) : 38. http://dx.doi.org/10.12928/telkomnika.v16i1.8520.

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Zhang Dongyun, 张冬云, 谢印开 Xie Yinkai, 李丛洋 Li Congyang, 曹玄扬 Cao Xuanyang et 徐仰立 Xu Yangli. « Simulation and Optimization of High Power Semicondutor Laser Microchannel Heat Sink ». Chinese Journal of Lasers 44, no 2 (2017) : 0202008. http://dx.doi.org/10.3788/cjl201744.0202008.

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Chiu, Yu Sheng, Quang Ho Luc, Yueh Chin Lin, Jui Chien Huang, Chang Fu Dee, Burhanuddin Yeop Majlis et Edward Yi Chang. « Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications ». Japanese Journal of Applied Physics 56, no 9 (24 août 2017) : 094101. http://dx.doi.org/10.7567/jjap.56.094101.

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Zhang, Yuqian. « The Application of Third Generation Semiconductor in Power Industry ». E3S Web of Conferences 198 (2020) : 04011. http://dx.doi.org/10.1051/e3sconf/202019804011.

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With the rapid development of technologies, the third generation semiconductor is being studied, as it is leading to the significant change in industry like the manufacture of PC, mobile devices, lighting etc. Till now, due to its irreplaceable physical characteristics, third generation semiconductor is applied to lots of fields. This paper analyzes the application of third generation semiconductor, namely, GaN and SiC. Their characteristics including advantages as well as disadvantages will be discussed through reviewing the result of relevant researches. Meanwhile, comparison between the third generation semiconductors and the second as well as the first generation semiconductors is made in this paper. Through the comparison of physical characteristics, recent marketing, production and limitations, the advantages and disadvantages of each semiconductor is analyzed and the suggestion of how to avoid the disadvantage through application is proposed. At last, the future development is predicted. According to the analysis result of this paper, silicon poses more merits. Silicon is not only cheaper but also performs better making it a preference of GaAs, and GaN in the domain of IC. The second generation semiconductor, GaAs, is widely used in the circuits and photoelectric integration. Furthermore, the third semiconductor material GaN is a promising material for power switching and communication and has the great possibility to play a crucial role in market.
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TREW, R. J., et M. W. SHIN. « HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS ». International Journal of High Speed Electronics and Systems 06, no 01 (mars 1995) : 211–36. http://dx.doi.org/10.1142/s0129156495000067.

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Electronic and optical devices fabricated from wide band gap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide band gap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs (MEtal Semiconductor Field-Effect Transistors) fabricated from wide band gap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. In this work the microwave performance of MESFETs fabricated from SiC, GaN and semiconducting diamond is investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperatures compared to similar components fabricated from the commonly employed GaAs MESFETs.
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Ribeiro, Vander Alkmin dos Santos, Valesca Donizete de Oliveira, Rero Marques Rubinger, Adhimar Flávio Oliveira et Claudiney Sales Pereira Mendonça. « Síntese, caracterização magnética e elétrica da ferrita de aluminato de cobre ». Research, Society and Development 10, no 8 (13 juillet 2021) : e31210817314. http://dx.doi.org/10.33448/rsd-v10i8.17314.

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Atualmente, as ferritas têm sido tema de muitas pesquisas devido as suas vantagens e propriedades que podem ser facilmente manipuladas, sendo assim de grande interesse tecnológico e científico. Para tanto, a distribuição dos cátions e interações magnéticas destacam um papel importante nestes materiais e, portanto, têm sua importância científica. As relações entre a composição química, estrutura cristalina, comportamento magnético e elétrico foram investigadas em ferritas de aluminato de cobre. As ferritas CuAlXFe2-XO4, onde x = 0,0; 0,5; 1,0 e 1,5 foram obtidas pelo método convencional de cerâmicas, reação estado-sólido entre os óxidos de ferro, alumínio e cobre. A mistura de óxidos foram pré-sinterizadas por 24 horas a 800°C e depois sinterizadas a 1100°C durante 8h. As propriedades magnéticas foram medidas por um magnetômetro de amostra vibrante e determinadas a partir do gráfico de histerese, observando-se que possui um comportamento de um material magnético moderado devido ao perfil da curva de magnetização e valores de coercividade (~223kA/m). A condutividade elétrica das pastilhas foi obtida a partir de características de tensão pela corrente em função da temperatura. A dependência da condutividade elétrica com a temperatura das ferritas de aluminato de cobre com diferentes composições apresentou um comportamento semicondutor e com o aumento da resistividade do material com o aumento do teor de alumínio ocorre devido à sua propriedade condutora. Também se observou que a magnetização de saturação diminui com o aumento da concentração de alumínio, apresentando comportamento de um material paramagnético e mole.
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Valentine, Nathan, Diganta Das, Bhanu Sood et Michael Pecht. « Failure Analyses of Modern Power Semiconductor Switching Devices ». International Symposium on Microelectronics 2015, no 1 (1 octobre 2015) : 000690–95. http://dx.doi.org/10.4071/isom-2015-tha56.

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Power semiconductor switches such as Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and Insulated Gate Bipolar Transistors (IGBTs) continue to be a leading cause of failure in power electronics systems. With the continued expansion of the power electronics market, reliable switching devices are of utmost importance in maintaining reliable operation of high power electronic systems. An overview of the failure mechanisms of power semiconductor switches identified by two failure analyses at CALCE is presented. The specific applications of power semiconducting switches have a wide range and include semiconductors found in converters for AC/DC power supplies and home appliance motor control board. All observed failures were from devices which experienced a short circuit between the collector and emitter terminals. The causes of the failures are hypothesized to be a combination of manufacturing defects and poor thermal management.
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Hasan, Md Nazmul, Edward Swinnich et Jung-Hun Seo. « Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics ». International Journal of High Speed Electronics and Systems 28, no 01n02 (mars 2019) : 1940004. http://dx.doi.org/10.1142/s0129156419400044.

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In recent years, the emergence of the ultrawide‐bandgap (UWBG) semiconductor materials that have an extremely large bandgap, exceeding 5eV including AlGaN/AlN, diamond, β-Ga2O3, and cubic BN, provides a new opportunity in myriad applications in electronic, optoelectronic and photonics with superior performance matrix than conventional WBG materials. In this review paper, we will focus on high power and high frequency devices based on two most promising UWBG semiconductors, β-Ga2O3 and diamond among various UWBG semiconductor devices. These two UWBG semiconductors have gained substantial attention in recent years due to breakthroughs in their growth technique as well as various device engineering efforts. Therefore, we will review recent advances in high power and high frequency devices based on β-Ga2O3 and diamond in terms of device performance metrics such as breakdown voltage, power gain, cut off frequency and maximum operating frequency.
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Štěpánek, Jan, Luboš Streit et Tomáš Komrska. « Comparison of Si and SiC based Power Converter Module of 150 kVA for Power System Applications ». TRANSACTIONS ON ELECTRICAL ENGINEERING 7, no 1 (30 mars 2020) : 10–13. http://dx.doi.org/10.14311/tee.2018.1.010.

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The paper deals with the comparison of power semiconductors based on Si and SiC in application of power converters for power systems. These are single-phase voltage-source bridge inverters with nominal power of 150 kVA. Power converters are designed to operate under both active power and reactive power. Mechanical design of the converters is ready for interchange the power semiconductor modules and assess the operation with both, Si and SiC technology.
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Chi, Zeyu, Jacob J. Asher, Michael R. Jennings, Ekaterine Chikoidze et Amador Pérez-Tomás. « Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides : New Energy Electronics Solutions for CO2 Emission Mitigation ». Materials 15, no 3 (2 février 2022) : 1164. http://dx.doi.org/10.3390/ma15031164.

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Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga2O3 (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn2O3, ZnO and SnO2, to name a few. Indeed, Ga2O3 as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlxGa1-xO3 may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa2O4 (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.
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Thèses sur le sujet "Power semicondutor"

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Ma, Cliff Liewei. « Modeling of bipolar power semiconductor devices / ». Thesis, Connect to this title online ; UW restricted, 1994. http://hdl.handle.net/1773/6046.

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Sankin, Igor. « Edge termination and RESURF technology in power silicon carbide devices ». Diss., Mississippi State : Mississippi State University, 2006. http://library.msstate.edu/etd/show.asp?etd=etd-12162005-141206.

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Huang, Chender 1960. « Characterization of interface trap density in power MOSFETs using noise measurements ». Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276872.

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Low-frequency noise has been measured on commercial power MOSFETs. These devices, fabricated with the VDMOS structure, exhibit a 1/f type noise spectrum. The interface state density obtained from noise measurements was compared with that obtained from the subthreshold-slope method. Reasonable agreement was found between the two measurements. The radiation effects on the noise power spectral density were also investigated. The results indicated that the noise can be attributed to the generation of interface traps near the Si-SiO₂ interface. The level of interface traps generated by radiation was bias dependent. The positive gate bias gave rise to the largest interface-trap density.
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Yen, Chi-min 1949. « Two-dimensional simulation of power MOSFET near breakdown ». Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276695.

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A simulation program has been developed to facilitate the investigation and analysis of power semiconductor devices under the reverse-bias condition. The electrostatic potential distribution is solved by using Poisson's equation alone, with particular attention to the neighborhood of avalanche breakdown. Because of its generality and efficiency, the program emerges as a powerful engineering tool for the design of power devices incorporating special junction termination techniques. Results are presented for a DMOS structure to illustrate the improvement in breakdown voltage when a field plate is applied. Numerical solution techniques for solving elliptic partial differential equations in a multi-material domain are discussed. The discretization of this domain is nonuniform in general due to its highly nonuniform physical parameters. By careful selection of grid lines near interfaces, the difference equation coefficients are considerably simplified. The resultant matrix of coefficients is symmetric even though Neumann boundary conditions are specified.
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Prosyk, Kelvin. « Power and spectral characterization of InGaAsP-InP multi-quantum well lasers ». Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0008/NQ42759.pdf.

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Elliott, Stella N. « High power semiconductor lasers ». Thesis, Cardiff University, 2010. http://orca.cf.ac.uk/54136/.

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Using red and near infra-red emitting quantum well and quantum dot based devices I have modelled the nearfield and farfield intensities and distribution in various waveguide structures. I compared the effect of various factors on the power density at catastrophic damage and found the greatest effect from the current pulse length and dot or well nature of the active region, for the first time in the AlGaInP material system. At short pulse length the quantum dot devices achieved a power density of 17 MW/cm2 compared to 14 MW/cm2 for quantum well lasers, and then proved by electron microscopy and photocurrent spectroscopy not to have reached their limit for mirror damage, but to have failed by other means. I observed the loss of optical power at catastrophic optical mirror damage in real time, applying single, very high current pulses, observing differences in the behaviour of quantum dot, which showed little or no facet damage, and quantum well devices, which showed large amounts of damage, with a resolution of tens of nanoseconds compared to microseconds in the literature. I proposed an explanation for the time taken for the power level to drop, which remained finite at about 200 ns in quantum well devices, in terms of the energy required to melt the observed quantity of damaged material.
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Wang, Haihong. « Advanced transport models development for deep submicron low power CMOS device design / ». Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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Linewih, Handoko, et h. linewih@griffith edu au. « Design and Application of SiC Power MOSFET ». Griffith University. School of Microelectronic Engineering, 2003. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20030506.013152.

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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (Dit) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to good agreement with the experimental transfer characteristic. The results demonstrate that both MEDICI and SPICE simulators can be used for design and optimization of 4H SiC MOSFETs and the circuits utilizing these MOSFETs. Based on critical review of SiC power MOSFETs, a new structure of SiC accumulation-mode MOSFET (ACCUFET) designed to address most of the open issues related to MOS interface is proposed. Detailed analysis of the important design parameters of the novel structure is performed using MEDICI with the parameter set used in the calibration process. The novel structure was also compared to alternative ACCUFET approaches, specifically planar and trench-gate ACCUFETs. The comparison shows that the novel structure provides the highest figure of merit for power devices. The analysis of circuit advantages enabled by the novel SiC ACCUFET is given in the final part of this thesis. The results from circuit simulation show that by utilizing the novel SiC ACCUFET the operating frequency of the circuit can be increased 10 times for the same power efficiency of the system. This leads to dramatic improvements in size, weight, cost and thermal management of power electronic systems.
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Linewih, Handoko. « Design and Application of SiC Power MOSFET ». Thesis, Griffith University, 2003. http://hdl.handle.net/10072/367638.

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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (Dit) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to good agreement with the experimental transfer characteristic. The results demonstrate that both MEDICI and SPICE simulators can be used for design and optimization of 4H SiC MOSFETs and the circuits utilizing these MOSFETs. Based on critical review of SiC power MOSFETs, a new structure of SiC accumulation-mode MOSFET (ACCUFET) designed to address most of the open issues related to MOS interface is proposed. Detailed analysis of the important design parameters of the novel structure is performed using MEDICI with the parameter set used in the calibration process. The novel structure was also compared to alternative ACCUFET approaches, specifically planar and trench-gate ACCUFETs. The comparison shows that the novel structure provides the highest figure of merit for power devices. The analysis of circuit advantages enabled by the novel SiC ACCUFET is given in the final part of this thesis. The results from circuit simulation show that by utilizing the novel SiC ACCUFET the operating frequency of the circuit can be increased 10 times for the same power efficiency of the system. This leads to dramatic improvements in size, weight, cost and thermal management of power electronic systems.
Thesis (PhD Doctorate)
Doctor of Philosophy (PhD)
School of Microelectronic Engineering
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Hinchley, David Alistair. « Large area power semiconductor devices ». Thesis, University of Cambridge, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627019.

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Livres sur le sujet "Power semicondutor"

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International, Semiconductor Data, dir. Power modules. Rolling Hills Estates, CA : SDI, 1990.

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Dace, Andrea. Power management : IC components. Norwalk, CT : Business Communications Co., 1999.

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Baliga, B. Jayant. Modern power devices. Malabar, Fla : Krieger, 1992.

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Baliga, B. Jayant. Modern power devices. New York : Wiley, 1987.

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Baliga, B. Jayant. Modern power devices. New York : Wiley, 1987.

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Linder, Stefan. Power semiconductors. Lausanne, Switzerland : EPFL Press, 2006.

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Rectifier, International. Power semiconductors. El Segundo, CA : International Rectifier, 1990.

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Hoft, R. G. Semiconductor power electronics. Malabar, Fla : Krieger, 1991.

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Hoft, Richard G. Semiconductor Power Electronics. Dordrecht : Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-011-7015-4.

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Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann et Rik De Doncker. Semiconductor Power Devices. Cham : Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-70917-8.

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Chapitres de livres sur le sujet "Power semicondutor"

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Bradley, D. A. « Power semiconductors ». Dans Power Electronics, 1–38. Boston, MA : Springer US, 1995. http://dx.doi.org/10.1007/978-1-4899-3039-2_1.

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Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann et Rik De Doncker. « Semiconductor Properties ». Dans Semiconductor Power Devices, 21–99. Cham : Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-70917-8_2.

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Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann et Rik De Doncker. « Semiconductor Properties ». Dans Semiconductor Power Devices, 17–75. Berlin, Heidelberg : Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-11125-9_2.

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Bose, Bimal K. « Power Semiconductor Devices ». Dans Modern Electrical Drives, 239–70. Dordrecht : Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-015-9387-8_11.

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Porst, A. « Power Semiconductor Devices ». Dans Silicon, 293–339. Berlin, Heidelberg : Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09897-4_15.

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Heumann, Klemens. « Power Semiconductor Devices ». Dans Basic Principles of Power Electronics, 13–35. Berlin, Heidelberg : Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82674-0_3.

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Ma, Dongsheng, et Rajdeep Bondade. « Power Semiconductor Devices ». Dans Reconfigurable Switched-Capacitor Power Converters, 23–39. New York, NY : Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-4187-8_2.

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Gupta, K. M., et Nishu Gupta. « Power Semiconductor Devices ». Dans Advanced Semiconducting Materials and Devices, 415–42. Cham : Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-19758-6_12.

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Neacșu, Dorin O. « Power Semiconductor Devices ». Dans Telecom Power Systems, 23–44. Boca Raton : CRC Press, 2017. http://dx.doi.org/10.4324/9781315104140-2.

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Yngvesson, Sigfrid. « Power-Combining ». Dans Microwave Semiconductor Devices, 183–206. Boston, MA : Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3970-4_7.

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Actes de conférences sur le sujet "Power semicondutor"

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Jacob, Peter, Albert Kunz et Giovanni Nicoletti. « A New Failure Analysis Roadmap for Power Semiconductor Modules and Devices ». Dans ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0419.

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Abstract In case of power semiconductor analysis, classical failure localization methods are restricted in application due to thick, closed metal layers and high-dose bulk-Si implants, making backside access difficult. Furthermore, defect traces in power semiconductors are often such severe that no conclusive FA is possible anymore. The new roadmap considers these specialties and shows ways how to deal with them, showing ways to conclusive results.
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Tsai, Chin-Yi, Chih-Hsiung Chen, Tien-Li Sung et Chin-Yao Tsai. « Effects of P-Doping on the Hot-Electron Cooling in Semiconductor Lasers : Phonon Bath Sharing and Electron-Hole Starring ». Dans The European Conference on Lasers and Electro-Optics. Washington, D.C. : Optica Publishing Group, 1998. http://dx.doi.org/10.1364/cleo_europe.1998.ctui52.

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Cooling of hot carriers and phonon dynamics are two major physical processes in the hot-carrier regime of semiconductors and semiconductor nanostructures where the carrier temperature is different from the lattice temperature [1][2]. Since the optical susceptibility (thus, gain and refractive index) is a function of the carrier temperature, carrier heating relating to these two processes is expected to play an important role on the performance of semiconductor lasers, such as modulation bandwidth, frequency chirping, nonlinear distortion, linewidth rebroadening, and power-independent linewidth. It was also experimentally demonstrated that a subpicosecond switch-off and switch-on of semiconductor lasers can be realized by such a transient hot-carrier effect.
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Soto-Crespo, J., E. M. Wright, G. I. Stegeman, S. Wabnitz et S. Trillo. « Pulse switching in active semiconductor nonlinear directional couplers ». Dans OSA Annual Meeting. Washington, D.C. : Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.wv3.

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It is well known that semiconductor materials display large and fast electronic nonlinearities at optical frequencies in the vicinity of their fundamental band gap. This suggests that semiconductors should be suitable materials for fabricating fast and short nonlinear directional couplers (NLDC). For a NLDC operating in cw mode, a low-power input signal introduced into one channel will emerge from a second adjacent waveguide, whereas a high-power signal would remain in the input channel. However, for pulses, the distribution of powers in the input leads to pulse breakup and part of the input energy is always transferred to the second channel. This crosstalk places a limitation on the applications of NLDCs for all-optical switching. In this talk we will discuss methods for obtaining pulse switching in active semiconductor NLDCs. Active couplers have a distinct advantage over their passive counterparts in that they should be cascadable. We have found that single pulse switching is difficult to achieve because of pulse breakup effects for pulse lengths >1 ps. However, for short pulses (<1 ps), the effects of group velocity dispersion become relevant and can lead to improved switching. In addition, we will show that it is possible to obtain 100% switching of a probe pulse by pumping the device either externally or optically.
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Bjorkholm, J. E., L. Eichner, J. C. White, R. E. Howard et H. G. Craighead. « Direct-writing in self-developing resists using low-power, cw, ultraviolet light ». Dans Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C. : Optica Publishing Group, 1985. http://dx.doi.org/10.1364/msba.1985.mb6.

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"Direct-write" technologies for the laser processing of semiconductors use sharply focused laser beams to induce localized chemical reactions at semiconductor surfaces. Though these processes are slow compared with conventional optical printing, they are of scientific interest and they appear promising for applications involving the customizing, repairing, and testing of integrated circuits. There also has been interest in "self-developing" photoresists; these are materials that ablate during exposure to optical radiation. The use of a self-developing resist eliminates the need for a development step following exposure.
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Miller, A., et R. J. Manning. « Transient Optical Nonlinearities in Multiple Quantum Well Structures : Four Wave Mixing, Anisotropic Carrier Diffusion and the Quantum Confined Stark Effect ». Dans Nonlinear Optical Properties of Materials. Washington, D.C. : Optica Publishing Group, 1988. http://dx.doi.org/10.1364/nlopm.1988.tub3.

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Multiple quantum well (MQW) semiconductors can exhibit a number of nonlinear optical phenomena associated with the clearly resolved, room temperature excitons. These are of practical interest for optically bistable devices, mode-locking of semiconductor lasers and phase conjugation. For instance, refractive nonlinearities associated with the saturation of the exciton can be very sensitive [1]. The quantum confined Stark effect can also be employed to produce optical nonlinearities at low power [2,3].
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Wang, Peng, Michael Manno et Avram Bar-Cohen. « Quantum-Well Si/SiC Self-Cooling for Thermal Management of High Heat Flux GaN HEMT Semiconductor Devices ». Dans ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/mnhmt2012-75290.

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Wide bandgap semiconductor technology is expected to have a dramatic impact on radar and communications systems. To take full advantage of the power capabilities and small device sizes of wide bandgap semiconductors, new and novel thermal management solutions, especially for high power density, monolithic microwave integrated circuits (MMICs) are in high demand. In this paper, a quantum-well Si/SiC self-cooling concept for hot spot thermal management at the multi-fingered GaN high electron mobility transistor (HEMTs) in the GaN-on-SiC package is proposed and investigated using a three dimensional (3-D) thermal-electric coupling simulation. The impact of electric current, cooler size, Si/SiC substrate thickness, Si/SiC thermal conductivity, and interfacial parasitic effect on the hot spot cooling is examined and discussed. The preliminary modeling results strongly suggest that self-cooling phenomenon inherent in the quantum-well Si/SiC substrate can be used to remove local high heat flux hot spot on the semiconductor devices.
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Miller, D. A. B. « Physics and Applications of Quantum Wells in Optics ». Dans Integrated and Guided Wave Optics. Washington, D.C. : Optica Publishing Group, 1989. http://dx.doi.org/10.1364/igwo.1989.waa1.

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Quantum wells are made from alternating thin (e.g. 100 Å) layers of two different semiconductors. These dimensions are so small that physical mechanisms can be engineered on a quantum-mechanical level, either to improve existing physical effects or to create new ones. The topic of the physics of layered semiconductor structures is one of intense current research interest in solid state physics. In optics, we see the consequences in linear and nonlinear optical properties and in electrooptical effects. (For recent reviews, see e.g. Refs. 1-5). Many of these effects are seen under rather practical conditions (e.g. room temperature), and are compatible with laser diode sources and with semiconductor electronics in wavelengths, in power and voltage levels, and in materials and fabrication. Although the quantum well materials are sophisticated structures, an impressive fabrication technology already exists through molecular beam epitaxy and other related semiconductor growth techniques. As a result, many interesting optical devices have been proposed and demonstrated.
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Karchnak, Martin Francis. « High Power Semiconductor Switching ». Dans Power Systems Conference. 400 Commonwealth Drive, Warrendale, PA, United States : SAE International, 2006. http://dx.doi.org/10.4271/2006-01-3033.

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Depatie, David. « Coherent Semiconductor Laser Sources ». Dans Coherent Laser Radar. Washington, D.C. : Optica Publishing Group, 1991. http://dx.doi.org/10.1364/clr.1991.md2.

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Semiconductor diode lasers offer the benefits of high brightness, high efficiency, small size, and direct modulation. These sources are promising for a multitude of applications such as free space laser communications1 and laser radar.2 The development of single GaAlAs diode lasers has reached a high level of maturity in terms of power, efficiency, modulation capability and lifetime. However, narrow stripe diode lasers exhibiting good beam quality (high brightness) are typically limited to stripe widths of less than or equal to 8 µm.3 Also, facet damage problems limit outputs to 10-20 mW per micron of stripe width. Therefore, the maximum power that can be produced by good beam quality lasers is on the order of 100 mW.3 For these sources to produce higher output powers, the effective emitting area needs to be increased and/or several lasers ganged togeather in phase to form a phased array.
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Figueroa, L., C. Morrison et L. Zinkiewicz. « High Power Semiconductor Lasers ». Dans Cambridge Symposium-Fiber/LASE '86, sous la direction de Elliot G. Eichen. SPIE, 1987. http://dx.doi.org/10.1117/12.937677.

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Rapports d'organisations sur le sujet "Power semicondutor"

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Cui, Hong-Liang. Power Semiconductor Simulation. Fort Belvoir, VA : Defense Technical Information Center, mars 2001. http://dx.doi.org/10.21236/ada393508.

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Hunt, Will, et Remco Zwetsloot. The Chipmakers : U.S. Strengths and Priorities for the High-End Semiconductor Workforce. Center for Security and Emerging Technology, septembre 2020. http://dx.doi.org/10.51593/20190035.

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Technical leadership in the semiconductor industry has been a cornerstone of U.S. military and economic power for decades, but continued competitiveness is not guaranteed. This issue brief exploring the composition of the workforce bolstering U.S. leadership in the semiconductor industry concludes that immigration restrictions are directly at odds with U.S. efforts to secure its supply chains.
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Das, Sujit, Laura D. Marlino et Kristina O. Armstrong. Wide Bandgap Semiconductor Opportunities in Power Electronics. Office of Scientific and Technical Information (OSTI), janvier 2018. http://dx.doi.org/10.2172/1415915.

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Krishna, Sanjay, et Ralph Dawson. High Power Mid Wave Infrared Semiconductor Lasers. Fort Belvoir, VA : Defense Technical Information Center, juin 2006. http://dx.doi.org/10.21236/ada463489.

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Venkatraman, Prasad, et B. J. Baliga. Fusible Link Technology for Power Semiconductor Devices. Fort Belvoir, VA : Defense Technical Information Center, novembre 1991. http://dx.doi.org/10.21236/ada244110.

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Lester, Luke F. High Power Mid-IR Semiconductor Lasers for LADAR. Fort Belvoir, VA : Defense Technical Information Center, novembre 2003. http://dx.doi.org/10.21236/ada419059.

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Shakouri, Ali, Nobby Kobayashi, Zhixi Bian, John Bowers, Art Gossard, Arun Majumdar, Rajeev Ram, Tim Sands, Josh Zide et Lon Bell. Metal-Semiconductor Nanocomposites for High Efficiency Thermoelectric Power Generation. Fort Belvoir, VA : Defense Technical Information Center, décembre 2013. http://dx.doi.org/10.21236/ada606254.

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Rediker, Robert H. Communications : Fiber-Coupled External-Cavity Semiconductor High-Power Laser. Fort Belvoir, VA : Defense Technical Information Center, août 1992. http://dx.doi.org/10.21236/ada257386.

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Klimov, Victor. Semiconductor Nanocrystals : Tiny Particles with “Quantum Powers”. Office of Scientific and Technical Information (OSTI), mai 2021. http://dx.doi.org/10.2172/1784668.

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Bennett, Brian R., et J. B. Boos. Antimonide-Based Compound Semiconductors for Low-Power Electronics. Fort Belvoir, VA : Defense Technical Information Center, janvier 2013. http://dx.doi.org/10.21236/ada595642.

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