Littérature scientifique sur le sujet « Piezoresistive transducer »
Créez une référence correcte selon les styles APA, MLA, Chicago, Harvard et plusieurs autres
Consultez les listes thématiques d’articles de revues, de livres, de thèses, de rapports de conférences et d’autres sources académiques sur le sujet « Piezoresistive transducer ».
À côté de chaque source dans la liste de références il y a un bouton « Ajouter à la bibliographie ». Cliquez sur ce bouton, et nous générerons automatiquement la référence bibliographique pour la source choisie selon votre style de citation préféré : APA, MLA, Harvard, Vancouver, Chicago, etc.
Vous pouvez aussi télécharger le texte intégral de la publication scolaire au format pdf et consulter son résumé en ligne lorsque ces informations sont inclues dans les métadonnées.
Articles de revues sur le sujet "Piezoresistive transducer"
Pereira, Ricardo dos Santos, et Carlos Alberto Cima. « Thermal Compensation Method for Piezoresistive Pressure Transducer ». IEEE Transactions on Instrumentation and Measurement 70 (2021) : 1–7. http://dx.doi.org/10.1109/tim.2021.3092789.
Texte intégralStiefvater, Jason, Yuhong Kang, Albrey de Clerck, Shuo Mao, Noah Jones, Josh Deem, Alfred Wicks, Hang Ruan et Wing Ng. « Dual-Use Strain Sensors for Acoustic Emission and Quasi-Static Bending Measurements ». Sensors 24, no 5 (2 mars 2024) : 1637. http://dx.doi.org/10.3390/s24051637.
Texte intégralRollins, Kyle M., J. Dusty Lane, Emily Dibb, Scott A. Ashford et A. Gray Mullins. « Pore Pressure Measurement in Blast-Induced Liquefaction Experiments ». Transportation Research Record : Journal of the Transportation Research Board 1936, no 1 (janvier 2005) : 210–20. http://dx.doi.org/10.1177/0361198105193600124.
Texte intégralBayram, Ferhat, Durga Gajula, Digangana Khan et Goutam Koley. « Investigation of AlGaN/GaN HFET and VO2 Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers ». Micromachines 11, no 9 (20 septembre 2020) : 875. http://dx.doi.org/10.3390/mi11090875.
Texte intégralAlmassri, Ahmed M., W. Z. Wan Hasan, S. A. Ahmad, A. J. Ishak, A. M. Ghazali, D. N. Talib et Chikamune Wada. « Pressure Sensor : State of the Art, Design, and Application for Robotic Hand ». Journal of Sensors 2015 (2015) : 1–12. http://dx.doi.org/10.1155/2015/846487.
Texte intégralSøndergård, Ole, et Peter Gravesen. « A new piezoresistive pressure transducer principle with improvements in media compatibility ». Journal of Micromechanics and Microengineering 6, no 1 (1 mars 1996) : 105–7. http://dx.doi.org/10.1088/0960-1317/6/1/025.
Texte intégralAparna, Dr K. Durga, K. L. V. Nagasree et G. Lalitha Devi. « Design and Fabrication of Mems U-Shaped Cantilever ». International Journal of Recent Technology and Engineering (IJRTE) 11, no 6 (30 mars 2023) : 80–83. http://dx.doi.org/10.35940/ijrte.f7496.0311623.
Texte intégralTong, Zhao Jing, Xiu Hua Shi, Xiang Dang Du, Sheng Wu Wang et Tian Peng He. « Temperature Compensation System of Diesel Engine Piezoresistive Pressure Transducer Based on Neural Networks and LabVIEW ». Applied Mechanics and Materials 241-244 (décembre 2012) : 833–36. http://dx.doi.org/10.4028/www.scientific.net/amm.241-244.833.
Texte intégralFroemel, Joerg, Gildas Diguet et Masanori Muroyama. « Micromechanical Force Sensor Using the Stress–Impedance Effect of Soft Magnetic FeCuNbSiB ». Sensors 21, no 22 (15 novembre 2021) : 7578. http://dx.doi.org/10.3390/s21227578.
Texte intégralChartrand, D. A., T. H. Ye, J. M. Maarek et H. K. Chang. « Measurement of pleural pressure at low and high frequencies in normal rabbits ». Journal of Applied Physiology 63, no 3 (1 septembre 1987) : 1142–46. http://dx.doi.org/10.1152/jappl.1987.63.3.1142.
Texte intégralThèses sur le sujet "Piezoresistive transducer"
Wu, Hankai. « Développement de transducteurs piézo-résistifs sur substrat textile pour caractérisation de flux d'air ». Electronic Thesis or Diss., Ecole nationale supérieure Mines-Télécom Atlantique Bretagne Pays de la Loire, 2024. http://www.theses.fr/2024IMTA0405.
Texte intégralThe aim of this work is to develop a pressure drop detecting system, which is to be integrated onto an air filter in an air handling unit (AHU). Indeed, filter pressure drop increases with the duration of use, and theevolution has a significant impact on the energy consumption of AHU. A measurement system has been developed using commercial sensors connected to a microcontroller. But this system is not permeable to airflow. A textile sensing solution, based on the piezoresistive phenomenon, was therefore proposed and developed. The textile substrate chosen was elastane, because of its elasticity and ability to deform under low stress. This material was functionalized by two techniques with a π conjugated polymer, poly(3,4-ethylenedioxythiophene), possessing semiconducting properties and bringing exploitable conductivity to a unitary textile yarn over lengths of the order of a meter. These functionalized textile yarns were characterized mechanically, morphologically, electrically and electromechanically. The results demonstrated the affinity of the conductive layer to the textile substrate, and training procedures were established to improve electromechanical responses at 5% elongation. Finally, preliminary detection tests on a laboratory-scale ventilation duct and on an industrial-scale AHU concluded that these yarns could discriminate air velocities ranging from 1 to 3 m/s
Rafael, Rémi. « Étude des propriétés piézorésistives de jonctions tunnel MIM pour la réalisation de jauges de déformations ». Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI105/document.
Texte intégralNew applications are emerging with de development of flexible electronic like flexible touch panels and wearable movement sensors. The well mastered silicon technologies are ill adapted to these uses (low maximal elongation, high fabrication temperatures). In this context, it is necessary to develop new types of strain gauges. Numerous possibilities have been studied that can be divided in two main categories: nanosomic transducers and composite transducers. In this work, we study the possibility to use a MIM (Metal Insulator Metal) tunnel junction as strain gauge. This kind of structure is very unusual in the literature were the only similar article are based on MIS (Metal Insulator Semiconductor) junctions. The objectives of this thesis are thus the understanding of the piezorisistive properties of MIM structures, the optimisation of their sensitivity, and the realisation of a sensor prototype exploiting plastonic technologies
Law, Jesse Townsend. « Application of the van der Pauw structure as a piezoresistive pressure sensor a numerical study / ». Thesis, Montana State University, 2007. http://etd.lib.montana.edu/etd/2007/law/LawJ0807.pdf.
Texte intégralNaeli, Kianoush. « Optimization of piezoresistive cantilevers for static and dynamic sensing applications ». Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28247.
Texte intégralCommittee Chair: Brand, Oliver; Committee Member: Adibi, Ali; Committee Member: Allen, Mark G.; Committee Member: Bottomley, Lawrence A.; Committee Member: Degertekin, F. Levent.
White, N. M. « A study of the piezoresistive effect in thick-film resistors and its application to load transduction ». Thesis, University of Southampton, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384433.
Texte intégralCoraucci, Guilherme de Oliveira. « Sensor de pressão microeletronico baseado no efeito piezoresistivo transversal em silicio ». [s.n.], 2008. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259037.
Texte intégralDissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação
Made available in DSpace on 2018-08-12T17:39:52Z (GMT). No. of bitstreams: 1 Coraucci_GuilhermedeOliveira_M.pdf: 8439243 bytes, checksum: d062ad2bf9b0e8eaae04ac2443802dab (MD5) Previous issue date: 2008
Resumo: Apresentamos neste trabalho um sensor de pressão piezorresistivo de multiterminais totalmente compatível com o processo de fabricação CMOS, constituído de um piezoelemento sensível ao estresse mecânico disposto sobre uma membrana microfabricada. O layout deste piezoelemento permite maximizar o efeito do estresse mecânico sobre a deflexão das equipotenciais distribuídas sobre sua região ativa. Utilizamos a análise baseada no Método de Elementos Finitos no projeto da membrana, bem como na definição da disposição dos piezoelementos sobre a mesma. O sensor foi fabricado em duas tecnologias diferentes: CMOS 0,3 ?m MAS (Austria Mikro Systeme International) - disponibilizado pelo Projeto Multi-Usuário PMU-FAPESP - e CCS/Unicamp (Centro de Componentes Semicondutores da Unicamp). Realizamos a membrana, no sensor fabricado na tecnologia AMS, através de um processo de desbaste mecânico da pastilha de silício. Já para o sensor fabricado na tecnologia do CCS/Unicamp, utilizamos um aparato de corrosão química (solução de KOH) para corrosão anisotrópica do silício monocristalino e, desta forma, obtivemos uma membrana com maior qualidade. Realizamos o estudo, analítico e numérico, da dependência da tensão de saída do piezoelemento de multiterminais com relação ao estresse mecânico. Os sensores fabricados apresentaram sensibilidade proporcional ao número de contatoscorrente de entrada e pouca dependência desta sensibilidade com sua geometria para uma grande faixa de variação de suas dimensões. Na tecnologia AMS, o sensor apresentou uma sensibilidade de 0,24 mV/psi e na tecnologia CCS/Unicamp 4,8 mV/psi com linearidade máxima de aproximadamente 5,6% FSO
Abstract: This work describes a CMOS-Compatible multiterminal piezoresistive pressure sensor based on the transversal piezoresistive effect, which consists of a piezotransducer fabricated on a membrane. The layout of this piezoelement is designed in such a way that its sensitivity is improved by maximizing the effect of the mechanical stress over the equipotential lines distribution in its active region. We performed Element Finite analyses in both membrane and piezoelement designs. The sensor was fabricated using two different technologies: CMOS 0,35 ?m AMS process (Austria Mikro Systeme International) - supported by the Fapesp Multi-User Project - and CCS/Unicamp process (Center for Semiconductor Components). In the AMS process, we realized a diaphragm by reducing the thickness of the die through a mechanical polishing process. In the sensor fabricated at CCS/Unicamp process, a backside bulk micro-machining was performed by using an automated KOH chemical etching apparatus, which provides a well-controlled anisotropic etching process. The sensor sensitivity is proportional to the number of input current terminals. The sensor sensitivity dependence related to its geometry is minimized even for a wide range of the sensor layout's aspect-ratio. In the AMS process, sensor's sensitivity amounted to 0.24 mV/psi and in the CCS/Unicamp process the sensitivity amounted to 4,8 mV/psi with a maximum linearity of about 5,6% FSO
Mestrado
Eletrônica, Microeletrônica e Optoeletrônica
Mestre em Engenharia Elétrica
Cassel, Robert Douglas. « Design, fabrication, and testing of the van der Paw piezoresistive structure for pressure sensing ». 2008. http://etd.lib.montana.edu/etd/2008/cassel/CasselR0508.pdf.
Texte intégralLivres sur le sujet "Piezoresistive transducer"
Total Dose Effects of Ionizing and Non-Ionizing Radiation on Piezoresistive Pressure Transducer Chips. Storming Media, 2003.
Trouver le texte intégralFluctuating pressures measured beneath a high-temperature, turbulent boundary layer on a flat plate at a Mach number of 5. [Washington, D.C.] : National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Division, 1989.
Trouver le texte intégralChapitres de livres sur le sujet "Piezoresistive transducer"
Adams, Thomas M., et Richard A. Layton. « Piezoresistive transducers ». Dans Introductory MEMS, 211–30. Boston, MA : Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-09511-0_8.
Texte intégralLenk, Claudia, Kalpan Ved, Steve Durstewitz, Tzvetan Ivanov, Martin Ziegler et Philipp Hövel. « Bio-inspired, Neuromorphic Acoustic Sensing ». Dans Springer Series on Bio- and Neurosystems, 287–315. Cham : Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-36705-2_12.
Texte intégralWhittier, Robert M. « High Performance Miniaturized Piezoresistive Pressure Transducers ». Dans Micro System Technologies 90, 587–92. Berlin, Heidelberg : Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-45678-7_83.
Texte intégralLiang, Yiching A., Su-Wen Ueng et Thomas W. Kenny. « Performance Characterization of Ultra-Thin N-Type Piezoresistive Cantilevers ». Dans Transducers ’01 Eurosensors XV, 970–73. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_229.
Texte intégralSchwizer, Jürg, Michael Mayer, Oliver Brand et Henry Baltes. « Analysis of Ultrasonic Wire Bonding by In-situ Piezoresistive Microsensors ». Dans Transducers ’01 Eurosensors XV, 1398–401. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_330.
Texte intégralWu, C. H., S. Stefanescu, H. I. Kuo, C. A. Zorman et M. Mehregany. « Fabrication and Testing of Single Crystalline 3C-SiC Piezoresistive Pressure Sensors ». Dans Transducers ’01 Eurosensors XV, 514–17. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_122.
Texte intégralPruitt, Beth, Dae-Han Choi, Jeff Florando, Rod Martens, Stuart Wenzel, Carl Reynolds, William Nix et Thomas Kenny. « Low Force Electrical Contact Measurements Using Piezoresistive MEMS Cantilevers to Characterize Thin-Film Metallization ». Dans Transducers ’01 Eurosensors XV, 1004–7. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_237.
Texte intégralvon Berg, Jochen, Marco Gnielka, Claudio Cavalloni, Thomas Boltshauser, Thomas Diepold, Biswajit Mukhopadhyay et Ernst Obermeier. « A Piezoresistive Low-Pressure Sensor Fabricated Using Silicon-on-Insulator (SOI) for Harsh Environment Applications ». Dans Transducers ’01 Eurosensors XV, 482–85. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_114.
Texte intégralBourouina, Tarik, Eric Lebrasseur, Gilbert Reyne, Hiroyuki Fujita, Takahisa Masuzawa, Alfred Ludwig, Eckhard Quandt, Hideo Muro, Takahiko Oki et Akira Asaoka. « A Novel Optical Scanner with Integrated Two-Dimensional Magnetostrictive Actuation and Two-Dimensional Piezoresistive Detection ». Dans Transducers ’01 Eurosensors XV, 1300–1303. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_306.
Texte intégralClark, D. L. « Temperature Compensation for Piezoresistive Pressure Transducers at Cryogenic Temperatures ». Dans Advances in Cryogenic Engineering, 1447–52. Boston, MA : Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3368-9_80.
Texte intégralActes de conférences sur le sujet "Piezoresistive transducer"
Chen, Steven, et J. Albert Chiou. « Hall Sensors Using Piezoresistive Transducer Fabrication Process ». Dans ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-13592.
Texte intégralDavaji, Benyamin, Shrinidhi Kulkarni, Visarute Pinrod, Alexander Ruyack et Amit Lal. « Piezoresistive Graphene SAW Transducer ». Dans 2018 IEEE International Ultrasonics Symposium (IUS). IEEE, 2018. http://dx.doi.org/10.1109/ultsym.2018.8579639.
Texte intégralNishida, Toshikazu, Robert Dieme, Mark Sheplak et Gijs Bosman. « Noise Modeling and Characterization of Piezoresistive Transducers ». Dans ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-15392.
Texte intégralHurst, Adam M., Timothy R. Olsen, Scott Goodman, Joe VanDeWeert et Tonghuo Shang. « An Experimental Frequency Response Characterization of MEMS Piezoresistive Pressure Transducers ». Dans ASME Turbo Expo 2014 : Turbine Technical Conference and Exposition. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/gt2014-27159.
Texte intégral« Four-terminal piezoresistive transducer : Theory and perspectives ». Dans 2009 International Student School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies (INTERNANO). IEEE, 2009. http://dx.doi.org/10.1109/internano.2009.5335610.
Texte intégralTalukdar, Abdul, et Goutam Koley. « Gated piezoresistive GaN microcantilever as an acoustic transducer ». Dans 2014 72nd Annual Device Research Conference (DRC). IEEE, 2014. http://dx.doi.org/10.1109/drc.2014.6872292.
Texte intégralSangtong, Suttisak, et Apinunt Thanachayanont. « Low-voltage CMOS instrumentation amplifier for piezoresistive transducer ». Dans TENCON 2005 - 2005 IEEE Region 10 Conference. IEEE, 2005. http://dx.doi.org/10.1109/tencon.2005.301274.
Texte intégralDempsey, Adam B., Patrick J. Seiler et Simon Johnson. « Comparison of Cylinder Pressure Measurements on a Heavy-Duty Diesel Engine Using a Switching Adapter ». Dans ASME 2018 Internal Combustion Engine Division Fall Technical Conference. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/icef2018-9776.
Texte intégralHurst, Adam M., Anthony D. Kurtz et Boaz Kochman. « High Temperature Static and Dynamic Pressure Transducer for Combustion Instability Control Using Acoustic Low-Pass Filter Structures ». Dans ASME Turbo Expo 2008 : Power for Land, Sea, and Air. ASMEDC, 2008. http://dx.doi.org/10.1115/gt2008-51522.
Texte intégralXu Song et Sheng Liu. « A performance prediction model for a piezoresistive transducer pressure sensor ». Dans ICEPT 2003. Fifth International Conference on Electronic Packaging Technology. Proceedings. IEEE, 2003. http://dx.doi.org/10.1109/eptc.2003.1298688.
Texte intégral