Bibliographies thématiques / PECVD silicon carbide and silicon nitride

Littérature scientifique sur le sujet « PECVD silicon carbide and silicon nitride »

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Publié le 6 septembre 2023

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Articles de revues sur le sujet "PECVD silicon carbide and silicon nitride"

ILIESCU, Ciprian. « A COMPREHENSIVE REVIEW ON THIN FILM DEPOSITIONS ON PECVD REACTORS ». Annals of the Academy of Romanian Scientists Series on Science and Technology of Information 14, n^o 1-2 (2021) : 12–24. http://dx.doi.org/10.56082/annalsarsciinfo.2021.1-2.12.

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The deposition of thin films by Plasma Enhanced Chemical Vapor Deposition (PECVD) method is a critical process in the fabrication of MEMS or semiconductor devices. The current paper presents an comprehensive overview of PECVD process. After a short description of the PECVD reactors main layers and their application such as silicon oxide, TEOS, silicon nitride, silicon oxynitride, silicon carbide, amorphous silicon, diamond like carbon are presented. The influence of the process parameters such as: chamber pressure, substrate temperature, mass flow rate, RF Power and RF Power mode on deposition rate, film thickness uniformity, refractive index uniformity and film stress were analysed. The main challenge of thin films PECVD deposition for Microelectromechanical Systems (MEMS)and semiconductor devices is to optimize the deposition parameters for high deposition rate with low film stress which and if is possible at low deposition temperature.

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Cho, Eun-Chel, Martin A. Green, Gavin Conibeer, Dengyuan Song, Young-Hyun Cho, Giuseppe Scardera, Shujuan Huang et al. « Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells ». Advances in OptoElectronics 2007 (28 août 2007) : 1–11. http://dx.doi.org/10.1155/2007/69578.

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We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.

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Abdelal, Aysegul, et Peter Mascher. « (Invited) Comparison of Compositional, Optical and Mechanical Properties of Sicn Thin Films Prepared By Ecr-PECVD with Different Hydrocarbon Precursors ». ECS Meeting Abstracts MA2022-02, n^o 18 (9 octobre 2022) : 874. http://dx.doi.org/10.1149/ma2022-0218874mtgabs.

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Silicon carbon nitride (SiCN) ternary compounds present remarkable mechanical strength, bandgap tunability, optical responsivity in the UV region, and dielectric performance in microelectronics due to the combined features of silicon nitride (SiN), silicon carbide (SiC), and carbonitride (CN) [1]. The SiCN compounds can be formed using fabrication methods such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and chemical synthesis. Successful SiCN thin films fabricated with different techniques and their characteristics have been reported extensively in the literature; however, the influence of hydrocarbon gas precursors has not drawn the same amount of attention for SiCN. Chemical, physical, and mechanical properties of thin films are determined by the growth parameters and the choice of sources used, like the organic single-molecule (methylsilazanes) or highly pure individual gas precursors [2,3]. The chemical vapor deposition systems mainly affect the energy of bombarding ions. Plasma-enhanced CVD has been commonly used for thin-film depositions since it provides low deposition temperature, high purity, good step coverage, and easy control of reaction parameters. Our work focuses on the electron-cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) method to fabricate SiCN thin films. This method differs from other PECVD methods because it can generate a dense, highly ionized plasma (1011 ions/cm3) and ion impingement energies on the substrate as low as 20 eV [4]. A combination of argon diluted silane (SiH4) and molecular nitrogen (N2) are utilized. For carbon incorporation, we explored the influence of methane (CH4), acetylene (C2H2), and ethane (C2H6) hydrocarbon gas precursors on SiCN thin film properties. The stoichiometry, density of the thin film, optical constants, and the bonding structure of SiCN thin films as a function of hydrocarbon carbon flow rates are presented. Due to the hydrogen-containing precursors used, the silicon carbonitride films deposited by CVD methods contain a significant amount of hydrogen (H), lowest for C2H2 and highest for C2H6. Nearly stoichiometric silicon nitride and silicon carbide thin films were also prepared to interpret the measurements further. From Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD) analysis, quantitative elemental composition distributions including H were found for films deposited with both carbon sources. For further investigation of the bonding structure of SiCN, Fourier Transform Infrared (FTIR) Spectroscopy was performed. Furthermore, we studied the hardness and Young’s modulus by nanoindentation, and optical constants were measured by variable angle spectroscopic ellipsometry (VASE). [1] C.W. Chen, C.C. Huang, Y.Y. Lin, L.C. Chen, K.H. Chen, W.F. Su, Optical prop- erties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection, Diamond Relat. Mater. 14 (3-7) (2005) 1010–1013. [2] Schwarz-Selinger, T., Von Keudell, A., & Jacob, W. (1999). Plasma chemical vapor deposition of hydrocarbon films: The influence of hydrocarbon source gas on the film properties. Journal of Applied Physics, 86(7), 3988-3996. [3] V.I. Ivashchenko, A.O. Kozak, O.K. Porada, L.A. Ivashchenko, O.K. Sinelnichenko, O.S. Lytvyn, T.V. Tomila, V.J. Malakhov, Characterization of SiCN thin films: experimental and theoretical investigations, Thin Solid Films 569 (2014) 57–63. [4] M. G. Boudreau, "SiOxNy Waveguides Deposited by ECR-PECVD", M.Eng. thesis, McMaster University, 1993.

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Fang, Kun, Rui Zhang, Tami Isaacs-Smith, R. Wayne Johnson, Emad Andarawis et Alexey Vert. « Thin Film Multichip Packaging for High Temperature Digital Electronics ». Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (1 janvier 2011) : 000039–45. http://dx.doi.org/10.4071/hiten-paper1-rwjohnson.

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Digital silicon carbide integrated circuits provide enhanced functionality for electronics in geothermal, aircraft and other high temperature applications. A multilayer thin film substrate technology has been developed to interconnect multiple SiC devices along with passive components. The conductor is vacuum deposited Ti/Ti:W/Au followed by an electroplated Au. A PECVD silicon nitride is used for the interlayer dielectric. Adhesion testing of the conductor and the dielectric was performed as deposited and after aging at 320°C. The electrical characteristics of the dielectric as a function of temperature were measured. Thermocompression flip chip bonding of Au stud bumped SiC die was used for electrical connection of the digital die to the thin film substrate metallization. Since polymer underfills are not compatible with 300°C operation, AlN was used as the base ceramic substrate to minimize the coefficient of thermal expansion mismatch between the SiC die and the substrate. Initial die shear results are presented.

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Galvão, Nierlly, Marciel Guerino, Tiago Campos, Korneli Grigorov, Mariana Fraga, Bruno Rodrigues, Rodrigo Pessoa, Julien Camus, Mohammed Djouadi et Homero Maciel. « The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering ». Micromachines 10, n^o 3 (22 mars 2019) : 202. http://dx.doi.org/10.3390/mi10030202.

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Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on silicon (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering, due to the importance of these materials for microelectronics and related fields. A drawback is the large lattice mismatch between SiC and Si. The insertion of an aluminum nitride (AlN) intermediate layer between them has been shown useful to overcome this problem. Herein, the high-power impulse magnetron sputtering (HiPIMS) technique was used to grow SiC thin films on AlN/Si substrates. Furthermore, SiC films were also grown on Si substrates. A comparison of the structural and chemical properties of SiC thin films grown on the two types of substrate allowed us to evaluate the influence of the AlN layer on such properties. The chemical composition and stoichiometry of the samples were investigated by Rutherford backscattering spectrometry (RBS) and Raman spectroscopy, while the crystallinity was characterized by grazing incidence X-ray diffraction (GIXRD). Our set of results evidenced the versatility of the HiPIMS technique to produce polycrystalline SiC thin films at near-room temperature by only varying the discharge power. In addition, this study opens up a feasible route for the deposition of crystalline SiC films with good structural quality using an AlN intermediate layer.

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Knowles, Kevin M., et Servet Turan. « Boron nitride–silicon carbide interphase boundaries in silicon nitride–silicon carbide particulate composites ». Journal of the European Ceramic Society 22, n^o 9-10 (septembre 2002) : 1587–600. http://dx.doi.org/10.1016/s0955-2219(01)00481-2.

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Biasini, V., S. Guicciardi et A. Bellosi. « Silicon nitride-silicon carbide composite materials ». International Journal of Refractory Metals and Hard Materials 11, n^o 4 (janvier 1992) : 213–21. http://dx.doi.org/10.1016/0263-4368(92)90048-7.

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Kodama, Hironori, Hiroshi Sakamoto et Tadahiko Miyoshi. « Silicon Carbide Monofilament-Reinforced Silicon Nitride or Silicon Carbide Matrix Composites ». Journal of the American Ceramic Society 72, n^o 4 (avril 1989) : 551–58. http://dx.doi.org/10.1111/j.1151-2916.1989.tb06174.x.

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Pruiti, Natale G., Charalambos Klitis, Christopher Gough, Stuart May et Marc Sorel. « Thermo-optic coefficient of PECVD silicon-rich silicon nitride ». Optics Letters 45, n^o 22 (12 novembre 2020) : 6242. http://dx.doi.org/10.1364/ol.403357.

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Greim, J., A. Lipp et K. Bettles. « Silicon Nitride and Silicon Carbide Turbocharger Rotors ». Materials Science Forum 34-36 (janvier 1991) : 623–27. http://dx.doi.org/10.4028/www.scientific.net/msf.34-36.623.

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Thèses sur le sujet "PECVD silicon carbide and silicon nitride"

Razzell, Anthony Gordon. « Silicon carbide fibre silicon nitride matrix composites ». Thesis, University of Warwick, 1992. http://wrap.warwick.ac.uk/110559/.

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Silicon carbide fibre/silicon nitride matrix composites have been fabricated using the reaction bonded silicon nitride (RBSN) and sintered reaction bonded silicon nitride (SRBSN) processing routes. A filament winding and tape casting system was developed to produce sheets of parallel aligned fibres within a layer of green matrix ('prepreg') which were cut, stacked and hot pressed to form a plate. This was nitrided and (in the case of SRBSN matrix composites) hot pressed at 1700°C to density the matrix. The magnesia (MgO) and the yttria/alumina (Y2O3/AI2O3) additive SRBSN systems were investigated as matrices for ease of processing and compatibility with the matrix. The MgO additive Si3N4 matrix reacted with the outer carbon rich layer on the surface of the fibres, framing a reaction layer approx. 2pm in thickness. A reaction layer was also observed with the Y2O3/AI2O3 additive matrix, but was thinner (< 0.5um), and was identified as silicon carbide from the electron diffraction pattern. X-ray mapping in the SEM was used to investigate the spatial distribution of elements within the interface region to a resolution < lum, including light elements such as carbon. The 6wt%Y203/ 2wt%Al203 additive SRBSN system was chosen for more detailed investigation, and the majority of characterisation was performed using this composition. Oxidation of composite samples was carried out at temperatures between 1000°C and 1400°C for up to 1000 hours. Little damage was visible after 100 hours for all temperatures, corresponding to a relatively small drop in post oxidation bend strength. After 1000 hours at 1000°C both carbon rich outer layers and the central carbon core of the fibre were removed. Samples were severely oxidised after 1000 hours at 1400°C, having a glass layer on the outer surface and replacement of near surface fibre/matrix interfaces with glass. The post oxidation bend strengths for both conditions were approx.2/3 of the as fabricated strength. Less damage was observed after 1000 hours at 1200°C, and the post oxidation bend strength was higher than the 1000°C and 1400°C samples. Mechanical properties of the SRBSN matrix composite were investigated at room temperature and elevated temperatures (up to 1400°C). The average room temperature values for matrix cracking stress and ultimate strength (in bend) were 651.1 and 713.2 MPa respectively, with corresponding Weibull moduli of 5.7 and 8.7. The stresses are comparable to similar monolithic silicon nitrides. Room temperature tensile matrix cracking and ultimate strength were 232MPa and 413MPa, lower than the bend test results, which were attributed to bending stresses in the sample, lowering the apparent failure stresses. The samples failed in a composite like manner (i.e. controlled rather than catastrophic failure), with a substantially higher woric of fracture than monolithic materials. The average matrix cracking and ultimate bend strength at 1200°C were 516MPa and 554MPa, dropping to 178MPa and 486MPa at 1400°C (the matrix cracking stress was indistinct at 1400°C due to plasticity). The creep and stress rupture properties at 1300°C were investigated in four point bend, using dead-weight loading. The creep rate was KH/s at a stress of 200MPa, lower than a hot pressed silicon nitride with MgO additive, and higher than a hot isostatically pressed Y2O2/SÍO2 additive silicon nitride. A cavitation creep mechanism was deduced from the stress exponent, which was >1. Failure by stress rupture did not have a lower limit, which is also associated with cavitation of the amorphous grain boundary phase.

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Chen, Wan Lam Florence Photovoltaics &amp Renewable Energy Engineering Faculty of Engineering UNSW. « PECVD silicon nitride for n-type silicon solar cells ». Publisher:University of New South Wales. Photovoltaics & ; Renewable Energy Engineering, 2008. http://handle.unsw.edu.au/1959.4/41277.

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The cost of crystalline silicon solar cells must be reduced in order for photovoltaics to be widely accepted as an economically viable means of electricity generation and be used on a larger scale across the world. There are several ways to achieve cost reduction, such as using thinner silicon substrates, lowering the thermal budget of the processes, and improving the efficiency of solar cells. This thesis examines the use of plasma enhanced chemical vapour deposited silicon nitride to address the criteria of cost reduction for n-type crystalline silicon solar cells. It focuses on the surface passivation quality of silicon nitride on n-type silicon, and injection-level dependent lifetime data is used extensively in this thesis to evaluate the surface passivation quality of the silicon nitride films. The thesis covers several aspects, spanning from characterisation and modelling, to process development, to device integration. The thesis begins with a review on the advantages of using n-type silicon for solar cells applications, with some recent efficiency results on n-type silicon solar cells and a review on various interdigitated backside contact structures, and key results of surface passivation for n-type silicon solar cells. It then presents an analysis of the influence of various parasitic effects on lifetime data, highlighting how these parasitic effects could affect the results of experiments that use lifetime data extensively. A plasma enhanced chemical vapour deposition process for depositing silicon nitride films is developed to passivate both diffused and non-diffused surfaces for n-type silicon solar cells application. Photoluminescence imaging, lifetime measurements, and optical microscopy are used to assess the quality of the silicon nitride films. An open circuit voltage of 719 mV is measured on an n-type, 1 Ω.cm, FZ, voltage test structure that has direct passivation by silicon nitride. Dark saturation current densities of 5 to 15 fA/cm2 are achieved on SiN-passivated boron emitters that have sheet resistances ranging from 60 to 240 Ω/□ after thermal annealing. Using the process developed, a more profound study on surface passivation by silicon nitride is conducted, where the relationship between the surface passivation quality and the film composition is investigated. It is demonstrated that the silicon-nitrogen bond density is an important parameter to achieve good surface pas-sivation and thermal stability. With the developed process and deeper understanding on the surface passivation of silicon nitride, attempts of integrating the process into the fab-rication of all-SiN passivated n-type IBC solar cells and laser doped n-type IBC solar cells are presented. Some of the limitations, inter-relationships, requirements, and challenges of novel integration of SiN into these solar cell devices are identified. Finally, a novel metallisation scheme that takes advantages of the different etching and electroless plating properties of different PECVD SiN films is described, and a preliminary evalua-tion is presented. This metallisation scheme increases the metal finger width without increasing the metal contact area with the underlying silicon, and also enables optimal distance between point contacts for point contact solar cells. It is concluded in this thesis that plasma enhanced chemical vapour deposited silicon nitride is well-suited for n-type silicon solar cells.

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Tatli, Zafer. « Silicon nitride and silicon carbide fabrication using coated powders ». Thesis, University of Newcastle Upon Tyne, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.394640.

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Turan, Servet. « Microstructural characterisation of silicon nitride-silicon carbide particulate composites ». Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627653.

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Kim, Hyoun-Ee. « Gaseous corrosion of silicon carbide and silicon nitride in hydrogen / ». The Ohio State University, 1987. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487327695622538.

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Gao, Wei. « Oxidation of nitride-bonded silicon carbide (NBSC) and hot rod silicon carbide with coatings ». Thesis, University of Strathclyde, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366751.

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Dominguez, Bucio Thalia. « NH3-free PECVD silicon nitride for photonic applications ». Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/422874/.

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Silicon Photonics has open the possibility of developing multilayer platforms based on complementary metal-oxide semiconductors compatible materials that have the potential to provide the density of integration required to fabricate complex photonic circuits. Amongst these materials, silicon nitride (SiN) has drawn attention due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfil the requirements of different linear and non-linear photonic applications covering the ultra-violet to mid-infrared wavelengths. Yet, the fabrication techniques typically used to grow SiN layers rely on processing temperatures > 400 C to obtain low propagation losses, which deem them inappropriate for multilayer integration. This thesis presents a systematic investigation that provided a comprehensive knowledge of a deposition method based on an NH3-free plasma enhanced chemical vapour deposition recipe that allows the fabrication of low-loss silicon nitride layers at temperatures < 400 C. The results of this study showed that the properties of the studied SiN layers depend mostly on their N/Si ratio, which is in fact one of the only properties that can be directly tuned with the deposition parameters. These observations provided a framework to optimise the propagation losses and optical properties of the layers in order to develop three platforms intended for specific photonic applications. The first one comprises 300nm stoichiometric SiN layers with refractive index (n) of 2 that enable the fabrication of photonic devices with propagation losses < 1 dB=cm at l = 1310nm and < 1:5 dB=cm at l = 1550 nm, which are good for applications that require efficient routing of optical signals. The second one consists on 600nm N-rich layers (n = 1.92) that allow fabricating both devices with propagation losses < 1 dB=cm at l = 1310 nm, apt for polarisation independent operation and coarse wavelength division multiplexing devices with cross-talk < 20 dB and low insertion losses. Finally, the last platform consisted of suspended Si-rich layers (n = 2.54) that permits the demonstration of photonic crystal cavities with Q factors as high as 122 000 and photonic crystal waveguides capable of operating in the slow-light regime. Hopefully, the demonstration of these platforms will stimulate the development of more complex SiN devices for multilayer routing, wavelength division multiplexing applications and non-linear integrated photonics in the future.

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Unal, Ozer. « Interface studies in silicon nitride/silicon carbide and gallium indium arsenide/gallium arsenide systems ». Case Western Reserve University School of Graduate Studies / OhioLINK, 1991. http://rave.ohiolink.edu/etdc/view?acc_num=case1059501714.

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Demir, Adem. « Silicon carbide fibre reinforced #beta#-sialon ceramics ». Thesis, University of Newcastle Upon Tyne, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391291.

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Gasch, Matthew J. « Processing and mechanical properties of silicon nitride/silicon carbide ceramic nanocomposites derived from polymer precursors / ». For electronic version search Digital dissertations database. Restricted to UC campuses. Access is free to UC campus dissertations, 2003. http://uclibs.org/PID/11984.

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Livres sur le sujet "PECVD silicon carbide and silicon nitride"

Razzell, A. G. Silicon carbide fibre silicon nitride matrix composites. [s.l.] : typescript, 1992.

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Feenstra, Randall M., et Colin E. C. Wood, dir. Porous Silicon Carbide and Gallium Nitride. Chichester, UK : John Wiley & Sons, Ltd, 2008. http://dx.doi.org/10.1002/9780470751817.

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Center, Lewis Research, dir. Stability and rheology of dispersions of silicon nitride and silicon carbide. [Cleveland, Ohio] : National Aeronautics and Space Administration, 1987.

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United States. National Aeronautics and Space Administration., dir. NDE reliability and process control for structural ceramics. [Washington, D.C.] : National Aeronautics and Space Administration, 1987.

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W, Sheldon Brian, Danforth Stephen C et Symposium on Silicon-Based Structural Ceramics (1993 : Honolulu, Hawaii), dir. Silicon-based structural ceramics. Westerville, Ohio : American Ceramic Society, 1994.

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C, Wood Colin E., dir. Porous silicon carbide and gallium nitride : Epitaxy, catalysis, and biotechnology applications. Chichester, England : John Wiley & Sons, 2008.

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Raftery, Theresa Maria. Electroconductive sialon-interstitial carbide composites. Dublin : University College Dublin, 1997.

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E, Brito Manuel, Lin Hua-Tay, Plucknett Kevin, American Ceramic Society Meeting et Symposium on Silicon-Based Structural Ceramics for the New Millennium (2002 : St. Louis, Mo.), dir. Silicon-based structural ceramics for the new Millennium : Proceedings of the Silicon-Based Structural Ceramics for the New Millennium Symposium : held at the 104th Annual Meeting of the American Ceramic Society : April 28-May 1, 2002, in St. Louis, Missouri. Westerville, Ohio : American Ceramic Society, 2003.

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G, Penn B., et George C. Marshall Space Flight Center., dir. Preparation of silicon carbide-silicon nitride fibers by the pyrolysis of polycarbosilazane precursors : (Center director's Discretionary Fund final report). [Marshall Space Flight Center, Ala.] : National Aeronautics and Space Administration, George C. Marshall Space Flight Center, 1985.

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J, Roth Don, et Lewis Research Center, dir. Probability of detection of internal voids in structural ceramics using microfocus radiography. [Cleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, 1985.

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Chapitres de livres sur le sujet "PECVD silicon carbide and silicon nitride"

Jones, Mark I., Ron Etzion, Jim Metson, You Zhou, Hideki Hyuga, Yuichi Yoshizawa et Kiyoshi Hirao. « Reaction Bonded Silicon Nitride - Silicon Carbide and SiAlON - Silicon Carbide Refractories for Aluminium Smelting ». Dans SiAlONs and Non-oxides, 235–38. Stafa : Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908454-00-x.235.

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Wan, Julin, Matt J. Gasch et Amiya K. Mukherjee. « Nano-Nano Composites of Silicon Nitride and Silicon Carbide ». Dans Ultrafine Grained Materials II, 235–44. Hoboken, NJ, USA : John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118804537.ch27.

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Atwell, William H. « Polymeric Routes to Silicon Carbide and Silicon Nitride Fibers ». Dans Advances in Chemistry, 593–606. Washington, DC : American Chemical Society, 1989. http://dx.doi.org/10.1021/ba-1990-0224.ch032.

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Matocha, Kevin, Ed Kaminsky, Alexei Vertiatchikh et Jeff B. Casady. « High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride Passivation ». Dans Silicon Carbide and Related Materials 2005, 1239–42. Stafa : Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1239.

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Tsirlin, A. M. « Inorganic silicon carbide, Tyranno and silicon nitride fibres without substrate ». Dans Fibre Science and Technology, 457–556. Dordrecht : Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0565-1_6.

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Schwark, J. M., et A. Lukacs. « Polysilazane Thermosets as Precursors for Silicon Carbide and Silicon Nitride ». Dans ACS Symposium Series, 43–54. Washington, DC : American Chemical Society, 1994. http://dx.doi.org/10.1021/bk-1994-0572.ch005.

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Kasuriya, Supawan, et Parjaree Thavorniti. « Preparation of Silicon Nitride-Silicon Carbide Composites from Abrasive SiC Powders ». Dans Progress in Powder Metallurgy, 1073–76. Stafa : Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-419-7.1073.

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Gu, Z., J. H. Edgar, Balaji Raghothamachar, Michael Dudley, Dejin Zhuang et Zlatko Sitar. « The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates ». Dans Silicon Carbide and Related Materials 2005, 1497–500. Stafa : Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1497.

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Pérez-Tomás, A., Phillippe Godignon, Jean Camassel, Narcis Mestres et Veronique Soulière. « PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces ». Dans Silicon Carbide and Related Materials 2005, 1047–50. Stafa : Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1047.

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Kinoshita, Toshiya, Masanori Ueki et Hiroshi Kubo. « Sintering of a Silicon Nitride Matrix Composite Reinforced with Silicon Carbide Whiskers ». Dans Brittle Matrix Composites 2, 270–79. Dordrecht : Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-2544-1_28.

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Actes de conférences sur le sujet "PECVD silicon carbide and silicon nitride"

Sheoran, Manav, Dong Seop Kim, Ajeet Rohatgi, H. F. W. Dekkers, G. Beaucarne, Matthew Young et Sally Asher. « Hydrogen diffusion in silicon from PECVD silicon nitride ». Dans 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). IEEE, 2008. http://dx.doi.org/10.1109/pvsc.2008.4922638.

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Chang, Li-Yang Sunny, Steve Pappert et Paul K. L. Yu. « Thermo-optic Properties in PECVD Silicon Rich Silicon Carbide ». Dans Novel Optical Materials and Applications. Washington, D.C. : Optica Publishing Group, 2022. http://dx.doi.org/10.1364/noma.2022.noth2e.4.

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Résumé :

We study the thermo-optic coefficient of silicon carbide with different silicon content. We demonstrate a clear trend between the silicon content and the thermo-optic coefficient which measured as high as 1.88× 10−4 ℃−1.

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Jayan, V., Dev Alok et P. R. Vaya. « Growth of silicon nitride by PECVD ». Dans Madras - DL tentative. SPIE, 1992. http://dx.doi.org/10.1117/12.57013.

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Pandraud, G., P. J. French et P. M. Sarro. « PECVD Silicon Carbide Waveguides for Multichannel Sensors ». Dans 2007 IEEE Sensors. IEEE, 2007. http://dx.doi.org/10.1109/icsens.2007.4388419.

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Nejadriahi, Hani, Alex Friedman, Rajat Sharma, Steve Pappert, Yeshaiahu Fainman et Paul Yu. « Enhanced thermo-optic effect in PECVD deposited silicon-rich silicon nitride ». Dans 2020 IEEE Photonics Conference (IPC). IEEE, 2020. http://dx.doi.org/10.1109/ipc47351.2020.9252294.

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Hickernell, F. S., T. S. Hickernell et Ming Liaw Ming Liaw. « The acoustic properties of PECVD thin-film silicon carbide ». Dans 1993 IEEE Ultasonics Symposium. IEEE, 1993. http://dx.doi.org/10.1109/ultsym.1993.339573.

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Avram, Marioara, Andrei Avram, Adina Bragaru, Bangtao Chen, Daniel Puiu Poenar et Ciprian Iliescu. « Low stress PECVD amorphous silicon carbide for MEMS applications ». Dans 2010 International Semiconductor Conference (CAS 2010). IEEE, 2010. http://dx.doi.org/10.1109/smicnd.2010.5650647.

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Cuevas, Andres, Florence Chen, Jason Tan, Helmut Mackel, Saul Winderbaum et Kristin Roth. « FTIR Analysis of Microwave-Excited PECVD Silicon Nitride Layers ». Dans Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279365.

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Chen, Florence, Jeffrey Cotter, Thorsten Trupke et Robert Bardos. « Characterization of PECVD Silicon Nitride Passivation with Photoluminescence Imaging ». Dans 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279687.

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Li, Yue, Yi Luo, Zhizeng Fang, Dengqin Xu, Qi Li, Xing Zhang, Yi Wang et Dedong Han. « Deposition and Characterization of Ammonia-free PECVD Silicon Nitride ». Dans 2023 24th International Vacuum Electronics Conference (IVEC). IEEE, 2023. http://dx.doi.org/10.1109/ivec56627.2023.10157925.

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Rapports d'organisations sur le sujet "PECVD silicon carbide and silicon nitride"

Jan W. Nowok, John P. Hurley et John P. Kay. SiAlON COATINGS OF SILICON NITRIDE AND SILICON CARBIDE. Office of Scientific and Technical Information (OSTI), juin 2000. http://dx.doi.org/10.2172/824976.

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Sundberg, G. J. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II. Office of Scientific and Technical Information (OSTI), janvier 1994. http://dx.doi.org/10.2172/814549.

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Sundberg, G. J., A. M. Vartabedian, J. A. Wade et C. S. White. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report. Office of Scientific and Technical Information (OSTI), octobre 1994. http://dx.doi.org/10.2172/28303.

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Buss, R. J. Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report. Office of Scientific and Technical Information (OSTI), février 1997. http://dx.doi.org/10.2172/453776.

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Cross, M. T. Aluminum nitride-silicon carbide whisker composites : Processing, properties, and microstructural stability. Office of Scientific and Technical Information (OSTI), janvier 1990. http://dx.doi.org/10.2172/6381576.

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Kingon, A. I., R. F. Davis et A. K. Singh. Integrated Synthesis and Post Processing of Silicon Carbide and Aluminum Nitride. Fort Belvoir, VA : Defense Technical Information Center, décembre 1990. http://dx.doi.org/10.21236/ada230810.

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Kang, S., J. H. Selverian, H. Kim, D. O'Niel et K. Kim. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Office of Scientific and Technical Information (OSTI), avril 1990. http://dx.doi.org/10.2172/6767279.

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Kang, S., J. Selverian, D. O`Neil, H. Kim et K. Kim. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report. Office of Scientific and Technical Information (OSTI), mai 1993. http://dx.doi.org/10.2172/10176461.

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Habermehl, Scott D., Peggy J. Clews, Sasha Summers et Sukwon Choi. Computational and Experimental Characterization of Aluminum Nitride-Silicon Carbide Thin Film Composites for High Temperature Sensor Applications. Office of Scientific and Technical Information (OSTI), décembre 2014. http://dx.doi.org/10.2172/1490541.

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Munro, R. G., et S. J. Dapkunas. Review of corrosion behavior of ceramic heat exchanger materals : Corrosion characteristics of silicon carbide and silicon nitride. Final report, September 11, 1992--March 11, 1993. Office of Scientific and Technical Information (OSTI), septembre 1993. http://dx.doi.org/10.2172/10180091.

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