Littérature scientifique sur le sujet « PAMBE SYSTEM »

We report a pABE system which enables highly efficient adenine to guanine conversion in bacteria. Key residues of a staphylopine/metal complex transporter cntBC were systematically screened via the pABE system.

Due to the indivisibility of agricultural machinery in production, limited farm sizes have reduced mechanization efficiency and increased the cost of grain production in China. As a result, the development of a moderate-scale farming system has been proposed by academic communities and policy makers. However, it is still hotly debated how to determine a moderate farm scale. We offer a new perspective on the costs of machinery services. This manuscript employs the threshold model and uses the nationally representative data from the 2015 China Rural Household Panel Survey (CRHPS) to investigate the role of farm size expansion relative to per area machinery services expenditures (PAMSE). The empirical results reveal that there is a nonlinear relation between the farm size and PAMSE. Specifically, farm size expansion can reduce the PAMSE by improving mechanization efficiency in all cases, while the magnitude of cost-saving is progressively reduced in the process of farm scale expansion. In particular, a 1 mu (1 mu = 1/15 ha) increase in the farm scale could only lead to a 0.3% decrease in the PAMSE when the farm size exceeded 50 mu, which indicates that 50 mu is a minimum efficient farm scale to achieve most economies of scale. Therefore, we suggest that persistent efforts should be devoted to improving farmland circulation efficiency and developing scale farms. More importantly, governmental supporting policies, such as agricultural subsidies, need to attach more importance to these large farms.

Abstract. Cultural eutrophication of coastal aquatic systems is a major undesired phenomenon of today, which is mainly ascribed to the application of inorganic fertilizers in agriculture. Consequently, dissolved inorganic nitrogen (DIN) is considered the major problem and widely studied. However, human interventions also strongly influence the riverine dissolved organic nitrogen (DON) concentrations and fluxes. Studies of nutrient inputs from tropical river catchments are biased towards DIN, even though they account for only a portion of the total dissolved nitrogen (TDN) pool, whereas the rest is comprised of DON and has been largely ignored. The tropical Pamba River was studied because of its manifold human activities in the catchment and was sampled during the south west monsoon (SWM), north east monsoon (NEM) and the pre monsoon (PM) months during 2010 to 2013. The largest pilgrim center on earth, the Sabarimala temple, located in the upstream forest is a unique feature of the catchment. Fertilizer application, livestock farming and inadequate sewage treatment are the prevailing land use practices. The goals of this study were to (i) define cause-effect relationships by assessing the effect of various human interventions such as the pilgrims, agriculture and sewage disposal in combination with the seasonal variations in hydrology on the DON concentrations and fluxes and to (ii) quantify the inputs from respective land use segments. The global maximum DON concentration (29 302 μM) was measured for the Pamba River. Pilgrim activities, high population density, agricultural and livestock farming as well as the lack of infrastructure for sanitation facilities were the cause for extremely high DON concentrations and fluxes in the plantation and settlement with mixed tree crop (SMT) segments. A DON yield of 745 kg ha−1 yr−1 was calculated for the Pamba catchment. The total DON inputs from all quantifiable sources amounted to 514 kg ha−1 yr−1 comprising of 69% of the total Pamba DON yield. In the Pamba River, sewage is the major source of DON and the unique Sabarimala pilgrim event accounts for most of it. Nevertheless, sewage input from the rest of the densely-populated catchment is high, which is a common feature of developing countries that lack adequate sanitation and water technology, i.e. in South and Southeast Asia and tropical Africa. Our study shows that DON makes up a significant portion of anthropogenic nitrogen in rivers, in particular in those regions, which are, however, scarce in respective data. It underscores the need for more quantitative studies from densely-populated tropical river catchments in order to improve global nitrogen budgets and the assessment of the consequences of anthropogenic nitrogen inputs into coastal aquatic systems.

Dual-chemical retention systems based on 2 cationic polyacrylamides, a colloidal silica, and a globular anionic polymer microparticles were investigated and an exfoliated nanoparticle indigenous mica mineral, sericite, was examined for its efficacy in substituting commercial microparticle preparations. The results indicated that nanosericite generated FPR between 76.9 and 80.9% for fines and chemicals. Its ash retention values, however, were higher and tended to increase with doses of polymer, nanosericite, or Sc to between 16 and 24%. As for paper physical properties, nanosericite was not amenable to substitute the c-PAMb/polymer with only handsheet stiffness superior to the combination. Nanosericite, however, showed good substitution capacity than the c-PAMa-colloidal silica combination. Regardless of the c-PAMa doses, all examined handsheet physical properties incorporating nanosericite were superior to colloidal silica. The optimal performance was observed with c-PAMa dose of 200 ppm. Optical properties of the handsheets indicated that with nanosericite substitution, brightness values were comparable to the polymer group, while its substitution capacity for colloidal silica decreased with increasing c-PAMb dose. Only at c-PAMa dose of 300 ppm, it appeared to have good substitution for colloidal silica. Substituting nanosericite for colloidal silica appeared to reduce the c-PAMa charge and increased the overall cost effectiveness.

Abstract The natural waterbody such as rivers and lakes are able to do the purification process themselves, which has the primary dependant of absorption capacity and dissolution capacity of atmospheric oxygen from the surface of the water body. The various pollutants such as biological pollutants and chemical pollutants are broken-down into insignificant strength over a period of time by the growth of certain bacteria. This bacterial growth in the water is possible only with the absorbed and dissolved oxygen content in the water. This absorbed and dissolved oxygen content in the water bodies are based on the velocity of the stream, depth, discharge rate and temperature of the water, thus the self-depuration capacity of the water bodies are depended on the natural profiles and environmental factors of the waterbody and its location. This explains that the turbulent water will get purified by itself in much higher rate than the stagnant water, which tends to become septic because of the oxygen scarcity. The degree of self-depuration of a natural water body is based on the physiochemical and biological activities occurring in the system. Various parameters like basic physical properties, chemical properties such as pH, hardness, dissolved solids, mineral content, BOD, dissolved oxygen for the samples were taken along the Pamba River. The samples are taken from three zones of the Rivers viz. 1) Forest zone, 2) Residential zone and 3) Industrial zone. The water quality factors from the samples are validated against the desirable values as per IS 10500: 2012 and justifies the current status of the River and recommendations for its wellbeing.

Abstract The California Net Energy System (CNES) can reliably project performance of feedlot cattle based on three factors: expected dry matter intake (DMI), some index of degree of maturity of cattle linked to body composition (fat and protein content), and an estimate of the net energy (NE) content of the diet. The CNES allowed feedlot managers to monitor growth and efficiency of individual pens of cattle. Through assigning distinct values for net energy for maintenance (NEm) vs. net energy for gain (NEg) of the metabolizable energy (ME) present in feeds, the CNES enables valid economic comparisons among feedstuffs, an appraisal not feasible based on total digestible nutrients or digestible energy (DE) values. Because NEm and NEg are linked mathematically to ME, the CNES also allows performance-adjusted ME (paME) value of diets to be calculated from observed DMI and growth or carcass measurements. Compared with other productivity measures (e.g., average daily gain and gain-to-feed ratio) that are confounded with and affected by DMI, the CNES logically separates production responses by cattle into two factors—DMI and ME of the diet. This enables research scientists or cattle producers to appraise responses within these two factors independently. In feeding studies, means of paME values were related closely to ME values of diets calculated from the ME of diet ingredients. But unlike ME values projected from diet analyses, paME estimates are affected by environmental conditions (e.g., season, weather, animal interactions, stress, nutritional history and deficiencies, associative effects of feeds, imprecise feed management, and animal healthfulness and disorders). These factors typically overestimate ME intake or increase energy requirements, both of which decrease energetic efficiency. By comparing paME with ME values calculated from diet composition, logical reasons behind performance responses to and quantitative benefits from feed additives, grain processing, hormone implants, and animal management can be appraised. Considering the evolution in cattle types, management and marketing conditions, and changes in diet ingredients and processing that have occurred during the past 50 yr, updating by a skilled committee to correct certain anomalies within the CNES as currently being applied seems appropriate. Developing simplified spreadsheets could help users evaluate their own dietary and management conditions and assure that the CNES continues to be widely applied by the feedlot industry within the United States and worldwide.

Tenotomy of the iliopsoas tendon has been described as an effective procedure to treat refractive groin pain induced by iliopsoas tendinitis. However, the procedure forces the rectus femoris to act as the primary hip flexor and little is known about the long-term effects of this procedure on the peri-articular muscle envelope (PAME). Studies suggest that iliopsoas tenotomy results in atrophy of the iliopsoas and decreased hip flexion strength with poorer outcomes, increasing the susceptibility for secondary tendinopathy. The aim of this study is to describe changes in the PAME following psoas release.All patients who presented for clinical examination at our hospital between 2016 and 2021 were retrospectively reviewed. Patients who presented after psoas tenotomy with groin pain and who were unable to actively lift the leg against gravity, were included. Pelvic MRI was taken. Qualitative muscle evaluation was done with the Quartile classification system. Quantitative muscle evaluation was done by establishing the cross-sectional area (CSA).Two independent observers evaluated the ipsi- and contralateral PAME twice. The muscles were evaluated on the level: iliacus, psoas, gluteus minimus-medius-maximus, rectus femoris, tensor fasciae lata, piriformis, obturator externus and internus.For the qualitative evaluation, the intra- and inter-observer reliability was calculated by using kappastatistics. A Bland-Altman analysis was used to evaluate the intra- and inter-observer reliability for the quantitative evaluation. The Wilcoxon test was used to evaluate the changes between the ipsi- and contra-lateral side.17 patients were included in the study. Following psoas tenotomy, CSA reduced in the ipsilateral gluteus maximus, if compared with the contralateral side. Fatty degeneration occurred in the tensor fascia latae. Both CSA reduction and fatty degeneration was seen for psoas, iliacus, gluteus minimus, piriformis, obturator externus and internus. No CSA reduction and fatty degeneration was seen for gluteus medius and rectus femoris.Conclusions/DiscussionFollowing psoas tenotomy, the PAME of the hip shows atrophy and fatty degeneration. These changes can lead to detrimental functional problems and may be associated with debilitating rectus femoris tendinopathy. In patients with psoas tendinopathy, some caution is advised when considering an iliopsoas tenotomy.

The project aims to develop an intelligent system for simulating pisciculture in Taal Lake in the Philippines through geographical information system and deep learning algorithm. Records of 2018-2020 from the database of Bureau of fisheries and aquatic resources IV-A-protected area management board (BFAR IVA-PAMB) was collected for model development. Deep learning algorithm model was developed and integrated to the system for time series analysis and simulation. Different technologies including tensorflow.js were used to successfully developed the intelligent system. It is found on this paper that recurrent neural network (RNN) is a good deep learning algorithm for predicting pisciculture in Taal lake. Further, it is also shown in the initial visualization of the system that barangay Sampaloc in Taal has highest rate of fish production in Taal while Tilapia nilotica sp. is the major product of the latter.

The Huasteca Potosina region has a relevant landscape heritage of biocultural diversity, due to high biological diversity and the presence of the Teenek (Huastec Mayan), Nahua, and Xi’iuy (Pame) ethnic groups. The object of this study is to analyze, among the different cultural groups of the region, how the performances of the relevant Socioecological Systems (SESs) influence the conservation of biocultural diversity. Quantitative approaches are used to determine the expected trends of indices (Informant Consensus Factor, ICF; Cultural Importance Index, CII; Shannon–Wiener Biodiversity Index, SWI) commonly used in the ethnobotanical field. Data of the main domestic forest species used by the groups mentioned above were collected in 2021. We analyzed the SES profile for each of the ethnic groups and a mestizo group, as well as their relationship with the biome they mainly inhabit and the domestic functions fulfilled by the ethnobotanical species. As a result, we found that the low deciduous forest and the sub-evergreen tropical forest biomes, which co-evolved mainly with the Nahua and the Teenek SESs, present higher diversity and effective use of species so that offer better chances for conserving the landscape heritage of biocultural diversity. Otherwise, the results also show the critical nature regarding the biomes inhabited by the Pame and the mestizo’s SESs.

III-Nitride semiconductor devices reserve their utmost place in the ubiquitous class of technology due to its applicability in a wide range of applications, which include solar cells, light-emitting diodes (LEDs), laser diodes (LDs), photodetectors (PDs), etc. Consequently, the extensive range of applications and projected gigantic market size generates continuous demand for more efficient, durable, and quality device products. The researchers have world-wide taken up this challenge of the never-ending requirement of technological improvisation and devoting their rigorous efforts to achieve better materials quality and device design. Among numerous domestic, commercial, and defence applications of III-nitride semiconductor-based devices, the detection of harmful ultraviolet (UV) radiation (<400 nm) found to be an extreme necessity. Universally, technologist finds potential needs to detect UV for plume detection, flame detection, chemical as well as biological analyses, secure space to space communications, environmental monitoring, astronomical research, and antimissile technology. Thus, the recommended ideal photodetector (PD) device should be adverse environment friendly with excellent sensitivity, high responsivity, high signal to noise ratio, and high spectral selectivity. Henceforth, as compared to conventional Sibased UV PD devices, III-nitride is proven to be a promising candidate due to their remarkable credentials such as wide-direct bandgap, high thermal conductivity, superb radiation hardness, which makes them operable in harsh environmental conditions. Besides, the detectors with Si-based technology severely loses signal to noise ratio as well as efficiency as a function of increasing dark current with elevated temperature. The solution to these problems has been provided by usage of the bulky cooling arrangement, expensive optical filters, and their operational instrumentation setups. Therefore, the movement of the semiconductor market from the Si-based to III-nitride based can be well understood. However, a key challenge is the presence of a large density of defects and dislocations due to lack of suitable lattice-matched substrates, and low resistance Ohmic contacts. Thus, particularly in the case of energy-efficient UV PD fabrication, the curiosity to grow good quality epitaxial III-nitride films has been mainly directed towards the study on GaN nanostructures (NSs). Thereby, the xiv growth of high surface to volume ratio based GaN NSs increases the incident photon absorption sites without sacrificing the device nano dimensionality. Besides, the possibility of integration of GaN with existing Si-based device technology leads us towards growth & fabrication on Si (111) substrates. Till date, numerous methodologies have been adopted to grow and optimize stress relaxed, higher aspect ratio, high crystalline quality as well as an excellent opto-electrical transport based GaN NSs by using plasma-assisted molecular beam epitaxy (PAMBE). Despite improvisation in crystalline quality, grown NSs as well as device geometry, recent advancement for enhancing the performance of PD devices emphasized on other exciting and potential approaches such as hybridization of III-nitride materials with other UV sensitive semiconductors, functionalization by novel metal nanoparticle’s nanoplasmonics and sensitization by highly conductive quantum dots. Thus, the thesis aims to explore and meticulously investigate the precise control epitaxial growth of high surface to volume ratio oriented GaN NSs on Si (111) substrate using the PAMBE system and their utilization as energy-efficient UV PDs. Besides, the effort made in this work excavates and execute the new prospects for emerging next-generation highly efficient photodetectors via. ZnO/GaN heterojunction hybridization, Au-NPs functionalization, and GQDs sensitization. The thesis consists of seven chapters, briefly described below: Chapter 1 gives a brief overview of the photodetection devices which are sensitive towards the UV range. Further, the significant contribution of III-nitrides in the fabrication of energy-efficient and durable UV PDs has been discussed. Moreover, the introduction of III-nitrides semiconductor’s inherent physical, chemical, optical properties with their bandgap engineering has been elaborated, which were found responsible for the fabrication of narrow to broadband PDs for harsh environment. Additionally, to enhance the performance of existing III-nitride UV PD technology, other potential approaches such as nitride’s surface functionalization, hybridization and sensitization have also been suggested. Chapter 2 describes the detailed mechanism of the technique used for the growth of III-nitride semiconductors along with various in-situ as well as ex-situ analytical tools xv and methods utilized for probing the structural, morphological, optical and electrical properties of the grown structures. This chapter illustrates a brief description of the steps involved in devices fabrication process and evaluation of their performance parameters as well. Chapter 3 elucidates the growth of nanoisland shaped, lower stress, and strain facilitated GaN-NS on Si (111) substrate via PAMBE and fabrication of GaN-NS based UV photodetection device even with NS’s tiny dimensionality. The threedimension (3D) growth of GaN-NS in real-time was observed by the in-situ RHEED technique, which displays transformation from streaky to the spotty pattern. A microRaman technique has been employed to elaborate on NS’s crystallinity and lower stress value, which is found to be in good agreement with related lower strain as evaluated by HR-XRD spectra. An observed sharp near band edge emission at 363.2 nm by room temperature photoluminescence measurement signifies the presence of GaN. After that, the as-grown ultra-thin GaN NSs were utilized to fabricate energyefficient self-powered UV PD, wherein non-homogeneous GaN nanoislands were perceived on the Si surface with a thickness of ~30 nm and an average distribution density of 2 ×1010 cm -2 . Despite nano dimensional GaN NSs film, the capability of UV detection of fabricated PD added novelty to this work, where performance parameters such as photosensitivity (~102 ), detectivity (~109 Jones), responsivity (1.76 mA/W) and NEP: noise equivalent power (3.5 × 10-11 WHz-1/2) under selfpowered mode were observed. The transient photo-response measurement revealed a rapid rise and decay time constants of ~18 ms and ~27 ms, respectively. Under varying optical power (1 mW to 13 mW), the GaN PD displayed significant enhancement in photocurrent with increasing optical power. The performance of the fabricated detector has also been analyzed under the photoconductive mode of operation, where it revealed significantly enhanced responsivity (23 fold) and detectivity (~1000 fold). Such nanostructured self-powered GaN-based UV PD paves the way towards the fabrication of energy-efficient optoelectronic devices. Chapter 4 presented the nanoplasmonic impact of chemically synthesized Au nanoparticles (NPs) on the performance of GaN NS based UV PD is analyzed. The devices with uniformly distributed Au NPs on GaN NSs (nanoislands) prominently xvi respond toward UV illumination (325 nm) in both self-powered as well as photoconductive modes of operation and have shown fast and stable time-correlated response with significant enhancement in the performance parameters. A comprehensive analysis of the device design, laser power, and bias-dependent responsivity and response time is presented. The fabricated Au NP/GaN nanoislandbased device yields the highest responsivity of ∼ 216 mA/W, detectivity of ∼ 109 jones, reduced NEP of ∼ 1.8 × 10−12 W Hz−1/2, External quantum efficiency (EQE) of ∼ 82%, and fast response/recovery time of ∼ 40 ms. Moreover, the study also illustrates the mechanism where light interacts with the chemically synthesized NPs guided by the surface plasmon to enhance the device performance effectively. Further, the decoration of low dimensional Au NPs on GaN NSs acts as a detection enhancer with fast recovery time. It paves the way toward the realization of energyefficient optoelectronic device applications. Chapter 5 elaborates on the fabrication of GaN-Nanotowers (GaN-NTs) based on highly efficient UV PD with distinct AlN buffer layer thickness and NTs lengths. The unique nanotower (tapered ended) morphology of an epitaxially grown hexagonal stacked nanocolumnar structure with truncated strain and high surface-to-volume ratio contributes to the significantly enhanced performance of the fabricated detector towards UV illumination. The fabricated GaN-NT UV PDs displays very low dark current (~12nA) & very high ILight /IDark ratio (>104 ) along with the highest responsivity of 485 A/W. The device exhibits very high EQE ~105 %, fast time-correlated transient response (~430 µs), very low NEP (~10-13 WHz-1/2), and excellent UV/Vis rejection ratio. Therefore, the utilization of such GaN-NT structures can be advantageous towards the fabrication of energy-efficient ultraviolet photodetector. Chapter 6 introduce the concept of performance augmentation of existing III-nitride (GaN) UV PDs technology employing hybridization using UV sensitive & compatible semiconductors (ZnO), surface functionalization by novel metal Gold (Au) NPs and sensitization by highly conductive graphene quantum dots (GQDs). Thereby, as grown (as discussed in chapter 5) vertically aligned longer GaN NTs with higher AlN thickness oriented highly responsive UV demonstrated fast response with excellent stability when functionalized with Au Nanoparticles, GQDs, and ZnO Nanorods. xvii Initially, GaN-NTs structure is hybridized by ZnO Nanorods (ZnO NRs), wherein, to capture maximum incident photons, a strategically formulated model of NSs over NSs has been proposed as an enhanced device active surface area. Consequently, the fabricated GaN-NTs based device with ZnO NRs hybridization, GQDs sensitization, and Au NPs functionalization significantly accelerate the performance of the device where a prominent three order reduction in dark current is observed along with gigantic R, lower NEP and enormously enhanced EQE of 7042 A/W, 1.84×10-14 W.Hz-1/2 and 2.7×106 % respectively. Mechanism elaborating the enhanced device performance with an appropriate energy band diagram has been discussed in detail. The fabricated highly sensitive device can lead a path towards future optoelectronic applications of integrated III-Nitride technology. Chapter 7 enlightens the major conclusions derived from the thesis work and the scope of future work.