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Littérature scientifique sur le sujet « Oxide doping »
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Thèses sur le sujet "Oxide doping"
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Yang, Zheng. "Doping in zinc oxide thin films." Diss., [Riverside, Calif.] : University of California, Riverside, 2009. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3359913.
Texte intégralRésumé :
Thesis (Ph. D.)--University of California, Riverside, 2009.<br>Includes abstract. Available via ProQuest Digital Dissertations. Title from first page of PDF file (viewed March 12, 2010). Includes bibliographical references. Also issued in print.
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Deyu, Getnet Kacha. "Defect Modulation Doping for Transparent Conducting Oxide Materials." Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAI071.
Texte intégralRésumé :
Le dopage des matériaux semi-conducteurs est une partie fondamentale de la technologie moderne. Les oxydes conducteurs transparents (TCO) constituent une famille de semi-conducteurs, qui sont optiquement transparents et électriquement conducteurs. La conductivité électrique élevée est généralement obtenue grâce à un dopage associant des impuretés de substitution hétérovalentes comme dans In2O3 dopé au Sn (ITO), SnO2 dopé au fluor (FTO) et ZnO dopé à l'Al (AZO). Cependant, ces approches classiques ont dans de nombreux cas atteint leurs limites tant en ce qui concerne la densité de porteurs de charge atteignable, que pour la valeur de la mobilité des porteurs de charge. Le dopage par modulation est un mécanisme qui exploite l'alignement de la bande d'énergie à une interface entre deux matériaux pour induire une densité de porteurs de charges libres dans l’un d’entre eux ; un tel mécanisme a permis de montrer dans certains cas que la limitation liée à la mobilité pouvait ainsi était évitée. Cependant, la limite de densité de porteuse ne peut pas être levée par cette approche, du fait de l'alignement des limites de dopage par défauts intrinsèques. Le but de ce travail était de mettre en œuvre cette nouvelle stratégie de dopage pour les TCO. La stratégie repose sur l’utilisation de large bande interdite pour doper la surface des couches de TCO, ce qui résulte à un piégeage du niveau de Fermi pour la phase dopante et à un positionnement du niveau de Fermi en dehors de la limite de dopage dans les TCO. La méthode est testée en utilisant un TCO comme In2O3 non dopé, In2O3 dopé au Sn et SnO2 phase hôte et Al2O3 et SiO2-x en tant que phase de dopant gap à large bande<br>The doping of semiconductor materials is a fundamental part of modern technology.Transparent conducting oxides (TCOs) are a group of semiconductors, which holds the features of being transparent and electrically conductive. The high electrical conductivity is usually obtained by typical doping with heterovalent substitutional impurities like in Sn-doped In2O3 (ITO), fluorine-doped SnO2 (FTO) and Al-doped ZnO (AZO). However, these classical approaches have in many cases reached their limits both in regard to achievable charge carrier density, as well as mobility. Modulation doping, a mechanism that exploits the energy band alignment at an interface between two materials to induce free charge carriers in one of them, has been shown to avoid the mobility limitation. However, the carrier density limit cannot be lifted by this approach, as the alignment of doping limits by intrinsic defects. The goal of this work was to implement the novel doping strategy for TCO materials. The strategy relies on using of defective wide band gap materials to dope the surface of the TCO layers, which results Fermi level pinning at the dopant phase and Fermi level positions outside the doping limit in the TCOs. The approach is tested by using undoped In2O3, Sn-doped In2O3 and SnO2 as TCO host phase and Al2O3 and SiO2−x as wide band gap dopant phase
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Taub, Samuel. "Transition metal oxide doping of ceria-based solid solutions." Thesis, Imperial College London, 2013. http://hdl.handle.net/10044/1/18845.
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The effects of low concentration Co, Cr and Mn oxide, singly and in combination, on the sintering and electrical properties of Ce0.9Gd0.1O1.95 (CGO) have been investigated with possible mechanisms suggested to explain this modified behaviour. The influence of these dopants on the densification kinetics of CGO were primarily investigated using constant heating rate dilatometry. Whilst low concentration Co and Mn-oxide were found to improve the sinterability of CGO, the addition of Cr-oxide was found to inhibit the densification kinetics of the material. The location and concentration of these dopants were investigated as a function of relative density using scanning transmission electron microscopy combined with energy dispersive x-ray mapping. All materials showed a gradual reduction in the grain boundary dopant concentration with sintering time, leading eventually to the formation of a second phase that was subsequently analysed by either electron energy loss spectroscopy or synchrotron x-ray powder diffraction. The improved densification of both the Co-doped and Mn-doped materials was believed to be related to an increased rate of lattice and grain boundary cation diffusion, associated with the segregation of the transition metal dopant to the grain boundary. In both cases the onset of rapid densification was correlated with the reduction of the transition metal cation leading to an increase in cerium interstitials, which are suggested to be the defects responsible for cerium diffusion. The inhibiting effects of Cr-addition were similarly related to changes in the defect chemistry, with the Cr ions creating a blocking effect that hindered the dominant grain boundary pathway for cation diffusion. The effects of these dopants on the electrical conductivity of CGO were examined using a combination of AC impedance spectroscopy and Hebb-Wagner polarisation measurements. Whilst Co-doping was found to enhance the specific grain boundary conductivity of CGO, the addition of either Cr or Mn resulted in an approximate 2 orders of magnitude decrease, even at dopant concentrations as low as 100 ppm. Despite these differences in ionic conductivity, both Co and Cr-doping were found to significantly enhance the electronic contribution to the conductivity along the boundaries, particularly within the p-type regime. The modified electrical behaviour was related to the formation of a continuous, transition metal-enriched grain boundary pathway and a change in the driving force for grain boundary Gd segregation, leading to a depletion of oxygen vacancies within the space charge regions and the consequent reduction of oxygen transport across the boundaries. The effects of this segregation were finally examined with mono-layer sensitivity using low energy ion scattering incorporating a novel method of self-standardisation. These analyses provided strong support for the conductivity mechanisms previously outlined.
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PRADA, STEFANO. "Enhancing oxide surface reactivity by doping or nano-structuring." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2014. http://hdl.handle.net/10281/50011.
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Wide band-gap simple oxides are rather inert materials, which found applications in heterogeneous catalysis mainly as supports for active metal nanoparticles. This thesis investigates tailored modifications of the oxide characteristics aimed at making these substrates more reactive in catalytic processes. In particular we are interested in engineering the charge transfer with supported metal catalysts in order to enhance their activity and selectivity. By using first principles calculations in the framework of the density functional theory, we have explored two main routes in this field: 1) nanostructuring, in particular nanothick oxide films supported on metals, and 2) doping of oxides with substitutional metal ions. After addressing methodological aspects related to the theoretical simulations of these materials, we have considered the role of oxide doping in optimizing the structural and electronic properties of supported gold adparticles; we have shown that depending on the dopant and the nature of the oxide it is possible to finely tune the shape and the charge state of adsorbed metal particle. Moreover we have combined oxide doping and nanostructuring in modifying the work function of metal substrates. By varying parameters like nature, position, and concentration of dopants within the metal-supported oxide films, it is possible in principle to modify the work function of the metallic support in a desired way.
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Wellenius, Patrick. "Nitrogen Doping and Ion Beam Processing of Zinc Oxide Thin Films." NCSU, 2006. http://www.lib.ncsu.edu/theses/available/etd-01042006-015801/.
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The modification of single crystal epitaxial ZnO thin films grown by Pulsed Laser Deposition on c-axis oriented sapphire substrates by Ion Beam Processing was investigated. Nitrogen doping of the films was attempted using nuclear transmutation using the <sup>16</sup>O (<sup>3</sup>He, <sup>4</sup>He) <sup>15</sup>O reaction at 6.6 MeV. The <sup>15</sup>O product is unstable and decays to <sup>15</sup>N after several minutes by positron emission. There are several potential advantages to using nuclear transmutation including producing nitrogen atoms on the correct lattice site for doping and reduced crystal damage as compared to conventional ion beam implantation. In the experiments in this thesis the doping levels achieved ~10<sup>14</sup> cm<sup>-3</sup> were too low to be expected to dope the films to p-type. However several beneficial effects due to the ion beam processing were observed, including large increases in resistivity, reduction of defect luminescence, and substantial increases in the response of photoconductive detectors. In addition to desired effects in some films it was also found that in some films bubble like structures approximately 10 ìm in diameter were formed where the thin film delaminated from the surface. It was assumed that mechanism for the bubble formation was the build up of helium gas at the sapphire/ZnO interface.
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Trapatseli, Maria. "Doping controlled resistive switching dynamics in transition metal oxide thin films." Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/423702/.
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Transition metal oxide thin films have attracted increasing attention due to their potential in non-volatile resistive random access memory (RRAM) devices, where such thin films are used as active layers in metal-insulator-metal (MIM) configurations. Titanium dioxide is one of the most celebrated oxides among the ones that exhibit resistive switching behaviour due to its wide band gap, high thermal stability, and high dielectric constant. RRAM devices with various materials as active layers, have demonstrated very fast switching performance but also huge potential for miniaturisation, which is the bottleneck of FLASH memory. Nevertheless, these devices very often suffer poor endurance, physical degradation, large variability of switching parameters and low yields. In most cases, the physical degradation stems from high electroforming and switching voltages. Doping of the active layer has been often employed to enhance the performance of RRAM devices, like endurance, OFF/ON ratio, forming voltages, etc. In this work, doping in TiO2-x RRAM devices was used to engineer the electroforming and switching thresholds so that device degradation and failure can be delayed or prevented. Al and Nb were selected with basic criteria the ionic radius and the oxidation state. The doped RRAM devices, showed improved switching performance compared to their undoped counterparts. Alternative approaches to doping were also investigated, like multilayer stacks comprising Al<sub>2</sub>O<sub>3-y</sub> and TiO<sub>2-x</sub> thin films. Furthermore, Al:TiO<sub>2-x</sub>/Nb:TiO<sub>2-x</sub> bilayer RRAM devices were fabricated, to prove whether a diode behaviour of the p-n interface inside the RRAM was feasible. The latest would be a particularly interesting finding towards active electronics.
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Li, Zheng. "Phase behavior of iron oxide doping with ethylbenzene dehydrogenation catalyst promoters." [Ames, Iowa : Iowa State University], 2009. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3355517.
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Rashidi, Nazanin. "Cation and anion doping of ZnO thin films by spray pyrolysis." Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:e8261559-8901-409d-8d08-a3fc04b6d734.
Texte intégralRésumé :
ZnO is an n-type semiconducting material with high optical transparency in the visible range (400 - 750 nm) of the electromagnetic spectrum. When doped with group 13 or 14 metal oxides, ZnO exhibits almost metallic electrical conductivity. ZnO thin films have been recognised as promising alternative material for the currently widely-used but expensive indium oxide in the form of indium tin oxide (ITO), in terms of their low cost and the high abundance of zinc. At the moment, even the best solution-processed ZnO films still can not compete for ITO replacement especially in solar energy utilization and OLED lighting applications, and the performance of ZnO films needs to be further improved. The objective of this work was to enhance the electrical and optical properties of spray pyrolysed ZnO thin films by simultaneous cation and anion doping. This was achieved by growing several series of undoped, single-doped, and co-doped ZnO thin films over a wide range of conditions, in order to understand the growth behaviour of undoped and doped ZnO, and to establish the optimum growth procedure. Spray pyrolysis process has advantages over vacuum-based techniques in terms of its low-cost, high deposition rate, simple procedure and can be applied for the production of large area thin films. Various techniques were employed to characterize the properties of the prepared thin films, and thus determine the optimum growth conditions (i.e. X-ray difiraction (XRD), Xray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), UV-Vis-NIR spectroscopy and Hall effect measurement). The growth of doped ZnO on glass substrates using Si and F as dopants, yielded highly conducting and transparent thin films. The co-doped thin films exhibited distinct widening of band gap upon increasing deposition temperature and doping concentration as a result of increasing electron concentration up to 4.8 x 10<sup>20</sup> cm<sup>-3</sup> upon doping with Si and F at the same time. The resistivity of the films deposited from Zn(acac)<sub>2</sub> · xH<sub>2</sub>O solutions and at the optimum temperature of 450 °C, was found to decrease from 4.6 x 10<sup>-2</sup> Ωcm for the best undoped ZnO film to 3.7 x 10<sup>-3</sup> Ωcm, upon doping with 3% Si. The films co-doped with Si and F in the ratios of [Si] / [Zn]= 3 - 4 mol% and [F] / [Zn]=30 - 40 mol% were the most conducting (p ∼ 2.0 x 10<sup>-3</sup> Ωcm). The associated optical transmittance of co-doped ZnO was above 85% in the whole visible range. Results compare favourably with In-doped ZnO deposited under similar conditions. Si+F co-doped ZnO films offer a suitable replacement for ITO in many applications such as LCD and touch screen displays.
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Gharavi-Naeini, Jafar. "Doping and temperature dependence of the Raman spectra lanthanum strontium copper oxide." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape9/PQDD_0028/NQ51865.pdf.
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Litzelman, Scott J. "Modification of space charge transport in nanocrystalline cerium oxide by heterogeneous doping." Thesis, Massachusetts Institute of Technology, 2009. http://hdl.handle.net/1721.1/46681.
Texte intégralRésumé :
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2009.<br>Includes bibliographical references (p. 161-170).<br>In the search for new materials for energy conversion and storage technologies such as solid oxide fuel cells, nano-ionic materials have become increasingly relevant because unique physical and transport properties that occur on the nanoscale may potentially lead to improved device performance. Nanocrystalline cerium oxide, in particular, has been the subject of intense scrutiny, as researchers have attempted to link trends in electrical conductivity with the properties of space charge layers within the material. In this thesis, efforts designed to intentionally modify the space charge potential, and thus the space charge profiles and the macroscopic conductivity, are described.Nanocrystalline CeO2 thin films with a columnar microstructure were grown by pulsed laser deposition. A novel heterogeneous doping technique was developed in which thin NiO and Gd203 diffusion sources were deposited on the ceria surface and annealed in the temperature range of 7008000C in order to diffuse the cations into the ceria layer exclusively along grain boundaries. Time-offlight secondary ion mass spectrometry (ToF-SIMS) was utilized to measure the diffusion profiles. A single diffusion mechanism, identified as grain boundary diffusion, was observed. Using the constant source solution to the diffusion equation, grain boundary diffusion coefficients on the order of 10-15 to 10-13 cm2/s were obtained for Ni, as well as Mg diffusion emanating from the underlying substrate. Microfabricated Pt electrodes were deposited on the sample surface, and electrical measurements were made using impedance spectroscopy and two-point DC techniques. The asdeposited thin films displayed a total conductivity and activation energy consistent with reference values in the literature. After in-diffusion, the electrical conductivity decreased by one order of magnitude. Novel electron-blocking electrodes, consisting of dense yttria-stabilized zirconia and porous Pt layers were fabricated in order to deconvolute the ionic and electronic contributions to the total conductivity. In the as-deposited state, the ionic conductivity was determined to be pO2-independent, and the electronic conductivity displayed a slope of -0.30. The ionic transference number in the as-deposited state was 0.34.<br>(cont.) After annealing either with or without a diffusion source at temperatures of 700-8000C, both the ionic and electronic partial conductivities decreased. The ionic transferene numbers with and without a diffusion source were 0.26 and 0.76, respectively. Based on the existing framework of charge transport in polycrystalline materials, carrier profiles associated with the Mott-Schottky and Gouy-Chapman models were integrated in order to predict conductivity values based on parameters such as grain size and the space charge potential. Mott-Schottky profiles with a space charge potential of 0.44V were used to describe the behavior of the ceria thin films in the as-deposited state. It is proposed that annealing at temperatures of 700TC and above resulted in segregation of acceptor impurity ions to the grain boundary, resulting in GouyChapman conditions. The best fit to the annealed data occurred for a space charge potential of 0.35 V: a decrease of approximately 90 mV from the as-deposited state. In addition, a high-conductivity interfacial layer between the CeO2 and substrate was detected and was determined to influence samples with no surface diffusion source to a greater degree than those with NiO or Gd203.<br>by Scott J. Litzelman.<br>Ph.D.