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Littérature scientifique sur le sujet « Oxide doping »

Auteur : Grafiati

Publié le 9 mars 2023

Mis à jour le 10 mars 2023

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Articles de revues sur le sujet "Oxide doping"

Rodwihok, Chatchai, Duangmanee Wongratanaphisan, Tran Van Tam, Won Mook Choi, Seung Hyun Hur et Jin Suk Chung. « Cerium-Oxide-Nanoparticle-Decorated Zinc Oxide with Enhanced Photocatalytic Degradation of Methyl Orange ». Applied Sciences 10, n^o 5 (2 mars 2020) : 1697. http://dx.doi.org/10.3390/app10051697.

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Cerium-oxide-nanoparticle-decorated zinc oxide was successfully prepared using a simple one-pot hydrothermal technique with different weight% Ce doping. It was found that an increase in Ce doping has an effect on the optical energy band-gap tunability. Ce dopant provides electron trapping on Ce/ZnO nanocomposites and also acts as a surface defect generator during hydrothermal processing. Additionally, a bi-metal oxide heterojunction forms, which acts as a charge separator to obstruct charge recombination and to increase the photodegradation performance. It was found that the methyl orange (MO) degradation performance improved with an increase in Ce doping. The decomposition of MO went from 69.42% (pristine ZnO) to 94.06% (7% Ce/ZnO) after 60 min under fluorescent lamp illumination.

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Marincaş, Alexandru-Horaţiu, et Petru Ilea. « Enhancing Lithium Manganese Oxide Electrochemical Behavior by Doping and Surface Modifications ». Coatings 11, n^o 4 (15 avril 2021) : 456. http://dx.doi.org/10.3390/coatings11040456.

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Lithium manganese oxide is regarded as a capable cathode material for lithium-ion batteries, but it suffers from relative low conductivity, manganese dissolution in electrolyte and structural distortion from cubic to tetragonal during elevated temperature tests. This review covers a comprehensive study about the main directions taken into consideration to supress the drawbacks of lithium manganese oxide: structure doping and surface modification by coating. Regarding the doping of LiMn2O4, several perspectives are studied, which include doping with single or multiple cations, only anions and combined doping with cations and anions. Surface modification approach consists in coating with different materials like carbonaceous compounds, oxides, phosphates and solid electrolyte solutions. The modified lithium manganese oxide performs better than pristine samples, showing improved cyclability, better behaviour at high discharge c-rates and elevated temperate and improves lithium ions diffusion coefficient.

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Robertson, John, et Zhaofu Zhang. « Doping limits in p-type oxide semiconductors ». MRS Bulletin 46, n^o 11 (novembre 2021) : 1037–43. http://dx.doi.org/10.1557/s43577-021-00211-3.

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AbstractThe ability to dope a semiconductor depends on whether the Fermi level can be moved into its valence or conduction bands, on an energy scale referred to the vacuum level. For oxides, there are various suitable n-type oxide semiconductors, but there is a marked absence of similarly suitable p-type oxides. This problem is of interest not only for thin-film transistors for displays, or solar cell electrodes, but also for back-end-of-line devices for the semiconductor industry. This has led to a wide-ranging search for p-type oxides using high-throughput calculations. We note that some proposed p-type metal oxides have cation s-like lone pair states. The defect energies of some of these oxides were calculated in detail. The example SnTa2O6 is of interest, but others have structures more closely based on perovskite structure and are found to have more n-type than p-type character. Graphic abstract

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Lu, Pei Hsuan Doris, Alison Lennon et Stuart Wenham. « Laser-Doping through Anodic Aluminium Oxide Layers for Silicon Solar Cells ». Journal of Nanomaterials 2015 (2015) : 1–8. http://dx.doi.org/10.1155/2015/870839.

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This paper demonstrates that silicon can be locally doped with aluminium to form localised p+surface regions by laser-doping through anodic aluminium oxide (AAO) layers formed on the silicon surface. The resulting p+regions can extend more than 10 μm into the silicon and the electrically active p-type dopant concentration exceeds 1020 cm−3for the first 6-7 μm of the formed p+region. Anodic aluminium oxide layers can be doped with other impurities, such as boron and phosphorus, by anodising in electrolytes containing the extrinsic impurities in ionic form. The ions become trapped in the formed anodic oxide during anodisation, therefore enabling the impurity to be introduced into the silicon, with aluminium, during laser-doping. This codoping process can be used to create very heavily doped surface layers which can reduce contact resistance on metallisation, whilst the deeper doping achieved by the intrinsic aluminium may act to shield the surface from minority carriers. laser-doping through AAO layers can be performed without introducing any voids in the silicon or fumes which may be harmful to human health.

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Yoshida, Hidehiro, Koji Morita, Byung Nam Kim et Keijiro Hiraga. « Grain Boundary Nanostructure and High Temperature Plastic Flow in Polycrystalline Oxide Ceramics ». Materials Science Forum 638-642 (janvier 2010) : 1731–36. http://dx.doi.org/10.4028/www.scientific.net/msf.638-642.1731.

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High temperature creep and superplastic flow in high-purity, polycrystalline oxide ceramics is very sensitive to a small amount of doping by various oxides. The doping effect is attributed to change in grain boundary diffusivity owing to grain boundary segregation of the doped cations. The doping effect on the grain boundary diffusivity is caused mainly by change of chemical bonding state in the vicinity of the grain boundary segregated with the doped cations. In other words, controlling of grain boundary nanostructure based on the doping process will be a useful way to develop new high-performance functional ceramics in the near future.

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den Engelsen, Daniel, et Georg Gaertner. « Rare earth oxide doping in oxide cathodes ». Applied Surface Science 253, n^o 2 (novembre 2006) : 1023–28. http://dx.doi.org/10.1016/j.apsusc.2006.04.046.

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Meffert, Matthias, Heike Störmer et Dagmar Gerthsen. « Dopant-Site Determination in Y- and Sc-Doped (Ba0.5Sr0.5)(Co0.8Fe0.2)O3−δby Atom Location by Channeling Enhanced Microanalysis and the Role of Dopant Site on Secondary Phase Formation ». Microscopy and Microanalysis 22, n^o 1 (22 décembre 2015) : 113–21. http://dx.doi.org/10.1017/s1431927615015536.

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Abstract(Ba0.5Sr0.5)(Co0.8Fe0.2)O3−δ(BSCF) is a promising material with mixed ionic and electronic conductivity which is considered for oxygen separation membranes. Selective improvement of material properties, e.g. oxygen diffusivity or suppression of secondary phase formation, can be achieved by B-site doping. This study is concerned with the formation of Co-oxide precipitates in undoped BSCF at typical homogenization temperatures of 1,000°C, which act as undesirable nucleation sites for other secondary phases in the application-relevant temperature range. Y-doping successfully suppresses Co-oxide formation, whereas only minor improvements are achieved by Sc-doping. To understand the reason for the different behavior of Y and Sc, the lattice sites of dopant cations in BSCF were experimentally determined in this work. Energy-dispersive X-ray spectroscopy in a transmission electron microscope was applied to locate dopant sites exploiting the atom location by channeling enhanced microanalysis technique. It is shown that Sc exclusively occupies B-cation sites, whereas Y is detected on A- and B-cation sites in Y-doped BSCF, although solely B-site doping was intended. A model is presented for the suppression of Co-oxide formation in Y-doped BSCF based on Y double-site occupancy.

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McGhee, Joseph, et Vihar P. Georgiev. « Simulation Study of Surface Transfer Doping of Hydrogenated Diamond by MoO3 and V2O5 Metal Oxides ». Micromachines 11, n^o 4 (20 avril 2020) : 433. http://dx.doi.org/10.3390/mi11040433.

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In this work, we investigate the surface transfer doping process that is induced between hydrogen-terminated (100) diamond and the metal oxides, MoO3 and V2O5, through simulation using a semi-empirical Density Functional Theory (DFT) method. DFT was used to calculate the band structure and charge transfer process between these oxide materials and hydrogen terminated diamond. Analysis of the band structures, density of states, Mulliken charges, adsorption energies and position of the Valence Band Minima (VBM) and Conduction Band Minima (CBM) energy levels shows that both oxides act as electron acceptors and inject holes into the diamond structure. Hence, those metal oxides can be described as p-type doping materials for the diamond. Additionally, our work suggests that by depositing appropriate metal oxides in an oxygen rich atmosphere or using metal oxides with high stochiometric ration between oxygen and metal atoms could lead to an increase of the charge transfer between the diamond and oxide, leading to enhanced surface transfer doping.

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El-Shobaky, Gamil A., Nagi R. E. Radwan et Farouk M. Radwan. « Catalytic Decomposition of H2O2 over Pure and Li2O-Doped Co3O4 Solids ». Adsorption Science & ; Technology 16, n^o 9 (octobre 1998) : 733–46. http://dx.doi.org/10.1177/026361749801600906.

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Pure and doped Co3O4 samples were prepared by the thermal decomposition at 500–900°C of pure and lithium nitrate-treated basic cobalt carbonate. The amounts of dopant added were varied in the range 0.75–6 mol% Li2O. The effects of this treatment on the surface and catalytic properties of cobaltic oxide solid were investigated using nitrogen adsorption at −196°C and studies of the decomposition of H2O2 at 30–50°C. The results obtained revealed that Li2O doping of Co3O4 followed by heat treatment at 500°C and 600°C resulted in a progressive increase in the value of the specific surface area, SBET, to an extent proportional to the amount of dopant present. However, the increase was more pronounced in the case of solid samples calcined at 500°C. This increase in the specific surface areas has been attributed to the fixation of a portion of the dopant ions on the uppermost surface layers of the solid leading to outward growth of the surface lattice. The observed increase in SBET due to Li2O doping at 500°C might also result from a narrowing of the pores in the treated solid as a result of the doping process. Lithium oxide doping of cobaltic oxide followed by heat treatment at 700–900°C resulted in a significant decrease in the SBET, Vp and r̄ values. Pure and doped solids precalcined at 500°C and 600°C exhibited extremely high catalytic activities which were not much affected by doping with Li2O. On the other hand, doping followed by calcination at 700–900°C brought about a considerable and progressive increase in the catalytic activity of the treated solids. This treatment did not modify the activation energy of the catalysed reaction, i.e. doping of Co3O4 solid followed by heating at 700°C and 900°C did not alter the mechanism of the catalytic reaction but increased the concentration of catalytically active constituents taking part in the catalytic process without altering their energetic nature.

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Lehr, Daniela, Markus R. Wagner, Johanna Flock, Julian S. Reparaz, Clivia M. Sotomayor Torres, Alexander Klaiber, Thomas Dekorsy et Sebastian Polarz. « A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials ». Beilstein Journal of Nanotechnology 6 (18 novembre 2015) : 2161–72. http://dx.doi.org/10.3762/bjnano.6.222.

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Numerous applications in optoelectronics require electrically conducting materials with high optical transparency over the entire visible light range. A solid solution of indium oxide and substantial amounts of tin oxide for electronic doping (ITO) is currently the most prominent example for the class of so-called TCOs (transparent conducting oxides). Due to the limited, natural occurrence of indium and its steadily increasing price, it is highly desired to identify materials alternatives containing highly abundant chemical elements. The doping of other metal oxides (e.g., zinc oxide, ZnO) is a promising approach, but two problems can be identified. Phase separation might occur at the required high concentration of the doping element, and for successful electronic modification it is mandatory that the introduced heteroelement occupies a defined position in the lattice of the host material. In the case of ZnO, most attention has been attributed so far to n-doping via substitution of Zn2+ by other metals (e.g., Al3+). Here, we present first steps towards n-doped ZnO-based TCO materials via substitution in the anion lattice (O2− versus halogenides). A special approach is presented, using novel single-source precursors containing a potential excerpt of the target lattice 'HalZn·Zn3O3' preorganized on the molecular scale (Hal = I, Br, Cl). We report about the synthesis of the precursors, their transformation into halogene-containing ZnO materials, and finally structural, optical and electronic properties are investigated using a combination of techniques including FT-Raman, low-T photoluminescence, impedance and THz spectroscopies.

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Thèses sur le sujet "Oxide doping"

Yang, Zheng. « Doping in zinc oxide thin films ». Diss., [Riverside, Calif.] : University of California, Riverside, 2009. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3359913.

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Thesis (Ph. D.)--University of California, Riverside, 2009.
Includes abstract. Available via ProQuest Digital Dissertations. Title from first page of PDF file (viewed March 12, 2010). Includes bibliographical references. Also issued in print.

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Deyu, Getnet Kacha. « Defect Modulation Doping for Transparent Conducting Oxide Materials ». Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAI071.

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Le dopage des matériaux semi-conducteurs est une partie fondamentale de la technologie moderne. Les oxydes conducteurs transparents (TCO) constituent une famille de semi-conducteurs, qui sont optiquement transparents et électriquement conducteurs. La conductivité électrique élevée est généralement obtenue grâce à un dopage associant des impuretés de substitution hétérovalentes comme dans In2O3 dopé au Sn (ITO), SnO2 dopé au fluor (FTO) et ZnO dopé à l'Al (AZO). Cependant, ces approches classiques ont dans de nombreux cas atteint leurs limites tant en ce qui concerne la densité de porteurs de charge atteignable, que pour la valeur de la mobilité des porteurs de charge. Le dopage par modulation est un mécanisme qui exploite l'alignement de la bande d'énergie à une interface entre deux matériaux pour induire une densité de porteurs de charges libres dans l’un d’entre eux ; un tel mécanisme a permis de montrer dans certains cas que la limitation liée à la mobilité pouvait ainsi était évitée. Cependant, la limite de densité de porteuse ne peut pas être levée par cette approche, du fait de l'alignement des limites de dopage par défauts intrinsèques. Le but de ce travail était de mettre en œuvre cette nouvelle stratégie de dopage pour les TCO. La stratégie repose sur l’utilisation de large bande interdite pour doper la surface des couches de TCO, ce qui résulte à un piégeage du niveau de Fermi pour la phase dopante et à un positionnement du niveau de Fermi en dehors de la limite de dopage dans les TCO. La méthode est testée en utilisant un TCO comme In2O3 non dopé, In2O3 dopé au Sn et SnO2 phase hôte et Al2O3 et SiO2-x en tant que phase de dopant gap à large bande
The doping of semiconductor materials is a fundamental part of modern technology.Transparent conducting oxides (TCOs) are a group of semiconductors, which holds the features of being transparent and electrically conductive. The high electrical conductivity is usually obtained by typical doping with heterovalent substitutional impurities like in Sn-doped In2O3 (ITO), fluorine-doped SnO2 (FTO) and Al-doped ZnO (AZO). However, these classical approaches have in many cases reached their limits both in regard to achievable charge carrier density, as well as mobility. Modulation doping, a mechanism that exploits the energy band alignment at an interface between two materials to induce free charge carriers in one of them, has been shown to avoid the mobility limitation. However, the carrier density limit cannot be lifted by this approach, as the alignment of doping limits by intrinsic defects. The goal of this work was to implement the novel doping strategy for TCO materials. The strategy relies on using of defective wide band gap materials to dope the surface of the TCO layers, which results Fermi level pinning at the dopant phase and Fermi level positions outside the doping limit in the TCOs. The approach is tested by using undoped In2O3, Sn-doped In2O3 and SnO2 as TCO host phase and Al2O3 and SiO2−x as wide band gap dopant phase

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Taub, Samuel. « Transition metal oxide doping of ceria-based solid solutions ». Thesis, Imperial College London, 2013. http://hdl.handle.net/10044/1/18845.

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The effects of low concentration Co, Cr and Mn oxide, singly and in combination, on the sintering and electrical properties of Ce0.9Gd0.1O1.95 (CGO) have been investigated with possible mechanisms suggested to explain this modified behaviour. The influence of these dopants on the densification kinetics of CGO were primarily investigated using constant heating rate dilatometry. Whilst low concentration Co and Mn-oxide were found to improve the sinterability of CGO, the addition of Cr-oxide was found to inhibit the densification kinetics of the material. The location and concentration of these dopants were investigated as a function of relative density using scanning transmission electron microscopy combined with energy dispersive x-ray mapping. All materials showed a gradual reduction in the grain boundary dopant concentration with sintering time, leading eventually to the formation of a second phase that was subsequently analysed by either electron energy loss spectroscopy or synchrotron x-ray powder diffraction. The improved densification of both the Co-doped and Mn-doped materials was believed to be related to an increased rate of lattice and grain boundary cation diffusion, associated with the segregation of the transition metal dopant to the grain boundary. In both cases the onset of rapid densification was correlated with the reduction of the transition metal cation leading to an increase in cerium interstitials, which are suggested to be the defects responsible for cerium diffusion. The inhibiting effects of Cr-addition were similarly related to changes in the defect chemistry, with the Cr ions creating a blocking effect that hindered the dominant grain boundary pathway for cation diffusion. The effects of these dopants on the electrical conductivity of CGO were examined using a combination of AC impedance spectroscopy and Hebb-Wagner polarisation measurements. Whilst Co-doping was found to enhance the specific grain boundary conductivity of CGO, the addition of either Cr or Mn resulted in an approximate 2 orders of magnitude decrease, even at dopant concentrations as low as 100 ppm. Despite these differences in ionic conductivity, both Co and Cr-doping were found to significantly enhance the electronic contribution to the conductivity along the boundaries, particularly within the p-type regime. The modified electrical behaviour was related to the formation of a continuous, transition metal-enriched grain boundary pathway and a change in the driving force for grain boundary Gd segregation, leading to a depletion of oxygen vacancies within the space charge regions and the consequent reduction of oxygen transport across the boundaries. The effects of this segregation were finally examined with mono-layer sensitivity using low energy ion scattering incorporating a novel method of self-standardisation. These analyses provided strong support for the conductivity mechanisms previously outlined.

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PRADA, STEFANO. « Enhancing oxide surface reactivity by doping or nano-structuring ». Doctoral thesis, Università degli Studi di Milano-Bicocca, 2014. http://hdl.handle.net/10281/50011.

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Wide band-gap simple oxides are rather inert materials, which found applications in heterogeneous catalysis mainly as supports for active metal nanoparticles. This thesis investigates tailored modifications of the oxide characteristics aimed at making these substrates more reactive in catalytic processes. In particular we are interested in engineering the charge transfer with supported metal catalysts in order to enhance their activity and selectivity. By using first principles calculations in the framework of the density functional theory, we have explored two main routes in this field: 1) nanostructuring, in particular nanothick oxide films supported on metals, and 2) doping of oxides with substitutional metal ions. After addressing methodological aspects related to the theoretical simulations of these materials, we have considered the role of oxide doping in optimizing the structural and electronic properties of supported gold adparticles; we have shown that depending on the dopant and the nature of the oxide it is possible to finely tune the shape and the charge state of adsorbed metal particle. Moreover we have combined oxide doping and nanostructuring in modifying the work function of metal substrates. By varying parameters like nature, position, and concentration of dopants within the metal-supported oxide films, it is possible in principle to modify the work function of the metallic support in a desired way.

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Wellenius, Patrick. « Nitrogen Doping and Ion Beam Processing of Zinc Oxide Thin Films ». NCSU, 2006. http://www.lib.ncsu.edu/theses/available/etd-01042006-015801/.

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The modification of single crystal epitaxial ZnO thin films grown by Pulsed Laser Deposition on c-axis oriented sapphire substrates by Ion Beam Processing was investigated. Nitrogen doping of the films was attempted using nuclear transmutation using the ¹⁶O (³He, ⁴He) ¹⁵O reaction at 6.6 MeV. The ¹⁵O product is unstable and decays to ¹⁵N after several minutes by positron emission. There are several potential advantages to using nuclear transmutation including producing nitrogen atoms on the correct lattice site for doping and reduced crystal damage as compared to conventional ion beam implantation. In the experiments in this thesis the doping levels achieved ~10¹⁴ cm^-3 were too low to be expected to dope the films to p-type. However several beneficial effects due to the ion beam processing were observed, including large increases in resistivity, reduction of defect luminescence, and substantial increases in the response of photoconductive detectors. In addition to desired effects in some films it was also found that in some films bubble like structures approximately 10 ìm in diameter were formed where the thin film delaminated from the surface. It was assumed that mechanism for the bubble formation was the build up of helium gas at the sapphire/ZnO interface.

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Trapatseli, Maria. « Doping controlled resistive switching dynamics in transition metal oxide thin films ». Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/423702/.

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Transition metal oxide thin films have attracted increasing attention due to their potential in non-volatile resistive random access memory (RRAM) devices, where such thin films are used as active layers in metal-insulator-metal (MIM) configurations. Titanium dioxide is one of the most celebrated oxides among the ones that exhibit resistive switching behaviour due to its wide band gap, high thermal stability, and high dielectric constant. RRAM devices with various materials as active layers, have demonstrated very fast switching performance but also huge potential for miniaturisation, which is the bottleneck of FLASH memory. Nevertheless, these devices very often suffer poor endurance, physical degradation, large variability of switching parameters and low yields. In most cases, the physical degradation stems from high electroforming and switching voltages. Doping of the active layer has been often employed to enhance the performance of RRAM devices, like endurance, OFF/ON ratio, forming voltages, etc. In this work, doping in TiO2-x RRAM devices was used to engineer the electroforming and switching thresholds so that device degradation and failure can be delayed or prevented. Al and Nb were selected with basic criteria the ionic radius and the oxidation state. The doped RRAM devices, showed improved switching performance compared to their undoped counterparts. Alternative approaches to doping were also investigated, like multilayer stacks comprising Al₂O_3-y and TiO_2-x thin films. Furthermore, Al:TiO_2-x/Nb:TiO_2-x bilayer RRAM devices were fabricated, to prove whether a diode behaviour of the p-n interface inside the RRAM was feasible. The latest would be a particularly interesting finding towards active electronics.

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Li, Zheng. « Phase behavior of iron oxide doping with ethylbenzene dehydrogenation catalyst promoters ». [Ames, Iowa : Iowa State University], 2009. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3355517.

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Rashidi, Nazanin. « Cation and anion doping of ZnO thin films by spray pyrolysis ». Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:e8261559-8901-409d-8d08-a3fc04b6d734.

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ZnO is an n-type semiconducting material with high optical transparency in the visible range (400 - 750 nm) of the electromagnetic spectrum. When doped with group 13 or 14 metal oxides, ZnO exhibits almost metallic electrical conductivity. ZnO thin films have been recognised as promising alternative material for the currently widely-used but expensive indium oxide in the form of indium tin oxide (ITO), in terms of their low cost and the high abundance of zinc. At the moment, even the best solution-processed ZnO films still can not compete for ITO replacement especially in solar energy utilization and OLED lighting applications, and the performance of ZnO films needs to be further improved. The objective of this work was to enhance the electrical and optical properties of spray pyrolysed ZnO thin films by simultaneous cation and anion doping. This was achieved by growing several series of undoped, single-doped, and co-doped ZnO thin films over a wide range of conditions, in order to understand the growth behaviour of undoped and doped ZnO, and to establish the optimum growth procedure. Spray pyrolysis process has advantages over vacuum-based techniques in terms of its low-cost, high deposition rate, simple procedure and can be applied for the production of large area thin films. Various techniques were employed to characterize the properties of the prepared thin films, and thus determine the optimum growth conditions (i.e. X-ray difiraction (XRD), Xray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), UV-Vis-NIR spectroscopy and Hall effect measurement). The growth of doped ZnO on glass substrates using Si and F as dopants, yielded highly conducting and transparent thin films. The co-doped thin films exhibited distinct widening of band gap upon increasing deposition temperature and doping concentration as a result of increasing electron concentration up to 4.8 x 10²⁰ cm^-3 upon doping with Si and F at the same time. The resistivity of the films deposited from Zn(acac)₂ · xH₂O solutions and at the optimum temperature of 450 °C, was found to decrease from 4.6 x 10^-2 Ωcm for the best undoped ZnO film to 3.7 x 10^-3 Ωcm, upon doping with 3% Si. The films co-doped with Si and F in the ratios of [Si] / [Zn]= 3 - 4 mol% and [F] / [Zn]=30 - 40 mol% were the most conducting (p ∼ 2.0 x 10^-3 Ωcm). The associated optical transmittance of co-doped ZnO was above 85% in the whole visible range. Results compare favourably with In-doped ZnO deposited under similar conditions. Si+F co-doped ZnO films offer a suitable replacement for ITO in many applications such as LCD and touch screen displays.

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Gharavi-Naeini, Jafar. « Doping and temperature dependence of the Raman spectra lanthanum strontium copper oxide ». Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape9/PQDD_0028/NQ51865.pdf.

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Litzelman, Scott J. « Modification of space charge transport in nanocrystalline cerium oxide by heterogeneous doping ». Thesis, Massachusetts Institute of Technology, 2009. http://hdl.handle.net/1721.1/46681.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2009.
Includes bibliographical references (p. 161-170).
In the search for new materials for energy conversion and storage technologies such as solid oxide fuel cells, nano-ionic materials have become increasingly relevant because unique physical and transport properties that occur on the nanoscale may potentially lead to improved device performance. Nanocrystalline cerium oxide, in particular, has been the subject of intense scrutiny, as researchers have attempted to link trends in electrical conductivity with the properties of space charge layers within the material. In this thesis, efforts designed to intentionally modify the space charge potential, and thus the space charge profiles and the macroscopic conductivity, are described.Nanocrystalline CeO2 thin films with a columnar microstructure were grown by pulsed laser deposition. A novel heterogeneous doping technique was developed in which thin NiO and Gd203 diffusion sources were deposited on the ceria surface and annealed in the temperature range of 7008000C in order to diffuse the cations into the ceria layer exclusively along grain boundaries. Time-offlight secondary ion mass spectrometry (ToF-SIMS) was utilized to measure the diffusion profiles. A single diffusion mechanism, identified as grain boundary diffusion, was observed. Using the constant source solution to the diffusion equation, grain boundary diffusion coefficients on the order of 10-15 to 10-13 cm2/s were obtained for Ni, as well as Mg diffusion emanating from the underlying substrate. Microfabricated Pt electrodes were deposited on the sample surface, and electrical measurements were made using impedance spectroscopy and two-point DC techniques. The asdeposited thin films displayed a total conductivity and activation energy consistent with reference values in the literature. After in-diffusion, the electrical conductivity decreased by one order of magnitude. Novel electron-blocking electrodes, consisting of dense yttria-stabilized zirconia and porous Pt layers were fabricated in order to deconvolute the ionic and electronic contributions to the total conductivity. In the as-deposited state, the ionic conductivity was determined to be pO2-independent, and the electronic conductivity displayed a slope of -0.30. The ionic transference number in the as-deposited state was 0.34.
(cont.) After annealing either with or without a diffusion source at temperatures of 700-8000C, both the ionic and electronic partial conductivities decreased. The ionic transferene numbers with and without a diffusion source were 0.26 and 0.76, respectively. Based on the existing framework of charge transport in polycrystalline materials, carrier profiles associated with the Mott-Schottky and Gouy-Chapman models were integrated in order to predict conductivity values based on parameters such as grain size and the space charge potential. Mott-Schottky profiles with a space charge potential of 0.44V were used to describe the behavior of the ceria thin films in the as-deposited state. It is proposed that annealing at temperatures of 700TC and above resulted in segregation of acceptor impurity ions to the grain boundary, resulting in GouyChapman conditions. The best fit to the annealed data occurred for a space charge potential of 0.35 V: a decrease of approximately 90 mV from the as-deposited state. In addition, a high-conductivity interfacial layer between the CeO2 and substrate was detected and was determined to influence samples with no surface diffusion source to a greater degree than those with NiO or Gd203.
by Scott J. Litzelman.
Ph.D.

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Livres sur le sujet "Oxide doping"

Jung, Chul-Ho. From Intrinsic to Extrinsic Design of Lithium-Ion Battery Layered Oxide Cathode Material Via Doping Strategies. Singapore : Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-6398-8.

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Kaschieva, S. Radiation defects in ion implanted and/or high-energy irradiated MOS structures. Hauppauge, N.Y : Nova Science Publishers, 2009.

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Kaschieva, S. Radiation defects in ion implanted and/or high-energy irradiated MOS structures. New York : Nova Science Publishers, 2010.

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Symposium J on Ion Implantation into Semiconductors, Oxides, and Ceramics (1998 Strasbourg, France). Ion implantation into semiconductors, oxides, and ceramics : Proceedings of the E-MRS 1998 Spring Meeting Symposium J on Ion Implantation into Semiconductors, Oxides, and Ceramics, Strasbourg, France, 16-19 June, 1998. Amsterdam : Elsevier, 1999.

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S, Ginley D., Materials Research Society, Materials Research Society Meeting et Symposium on Crystalline Oxides on Semiconductors (2002 : Boston, Mass.), dir. Crystalline oxide-silicon heterostructures and oxide optoelectronics : Symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A. Warrendale, Pa : Materials Research Society, 2003.

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Jung, Chul-Ho. From Intrinsic to Extrinsic Design of Lithium-Ion Battery Layered Oxide Cathode Material Via Doping Strategies. Springer, 2022.

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Ion Implantation into Semiconductors, Oxides and Ceramics (European Materials Research Society Symposia Proceedings). Elsevier Science, 1999.

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Chapitres de livres sur le sujet "Oxide doping"

Waag, Andreas. « Electrical Conductivity and Doping ». Dans Zinc Oxide, 95–119. Berlin, Heidelberg : Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10577-7_5.

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Gurylev, Vitaly. « Strategy I : Doping ». Dans Advancement of Metal Oxide Materials for Photocatalytic Application, 43–85. Cham : Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-20553-8_2.

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Artacho, E., N. C. Bristowe, P. B. Littlewood, J. M. Pruneda et M. Stengel. « Electrochemical Doping of Oxide Heterostructures ». Dans Frontiers in Electronic Materials, 35. Weinheim, Germany : Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527667703.ch4.

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Janotti, Anderson, et Chris G. Van de Walle. « Native Point Defects and Doping in ZnO ». Dans Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 113–34. Chichester, UK : John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch5.

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Satardekar, Pradnyesh, Dario Mortinaro et Vincenzo M. Sglavo. « Modification of Sintering Behavior of Ni Based Anode Material by Doping for Metal Supported-SOFC ». Dans Advances in Solid Oxide Fuel Cells IX, 77–87. Hoboken, NJ, USA : John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118807750.ch7.

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Masuda, Hiromu, Fumio Mizuno, Izumi Hirabayashi et Shoji Tanaka. « Possibility of the Carrier Doping in a Ferromagnetic Copper Oxide : La4Ba2Cu2O10 ». Dans Advances in Superconductivity III, 241–44. Tokyo : Springer Japan, 1991. http://dx.doi.org/10.1007/978-4-431-68141-0_51.

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Jadhav, Gurunath, Sanjay Sahare, Dipti Desai, Tejashree M. Bhave, S. N. Kale et Ravi Kant Choubey. « Effect of Copper Doping on Physical Properties of Cadmium Oxide Thin Films ». Dans Springer Proceedings in Physics, 163–67. Cham : Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-29096-6_21.

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Anita Singh et Vandna Luthra. « Modulating Structural, Optical and Electrical Properties of Zinc Oxide by Aluminium Doping ». Dans Springer Proceedings in Physics, 1255–65. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_191.

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Sharma, Akash, Pooja Sahoo, Alfa Sharma et Saswat Mohapatra. « Effect of Morphology and Doping on the Photoelectrochemical Performance of Zinc Oxide ». Dans Electrochemical Energy Conversion and Storage Systems for Future Sustainability, 251–88. Includes bibliographical references and index. : Apple Academic Press, 2020. http://dx.doi.org/10.1201/9781003009320-8.

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Mansanares, A. M., F. C. G. Gandra, E. C. da Silva, H. Vargas et L. C. M. Miranda. « Photoacoustic and EPR Investigation of Iron Oxide Doping of Soda-Lime Glasses ». Dans Photoacoustic and Photothermal Phenomena II, 326–27. Berlin, Heidelberg : Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-540-46972-8_83.

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Actes de conférences sur le sujet "Oxide doping"

Van de Walle, Chris G. « Doping of gallium oxide and aluminum gallium oxide alloys ». Dans Oxide-based Materials and Devices XII, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2021. http://dx.doi.org/10.1117/12.2588459.

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Badescu, Catalin, Daniel Hashemi, Jonghoon J. Lee et Jacob P. Tavenner. « Doping of beta-gallium-oxide (Conference Presentation) ». Dans Oxide-based Materials and Devices IX, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2018. http://dx.doi.org/10.1117/12.2295970.

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Lyons, John L., Darshana Wickramaratne et Joel B. Varley. « Band alignments and doping strategies in orthorhombic and monoclinic AlGO alloys ». Dans Oxide-based Materials and Devices XII, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2021. http://dx.doi.org/10.1117/12.2588842.

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Huang, Dong, Yingli Shi et Francis C. Ling. « Enhancing the dielectric constant of oxides via acceptor-donor co-doping ». Dans Oxide-based Materials and Devices XII, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2021. http://dx.doi.org/10.1117/12.2586393.

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Qi, Dongchen. « Enabling diamond nanoelectronics by transition metal-oxide-induced surface transfer doping ». Dans Oxide-based Materials and Devices XII, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2021. http://dx.doi.org/10.1117/12.2588701.

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Gao, Yongli. « Investigation of Doping C60 with Metal Oxide ». Dans Advanced Optoelectronics for Energy and Environment. Washington, D.C. : OSA, 2013. http://dx.doi.org/10.1364/aoee.2013.asu1b.2.

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Mauze, Akhil, Takeki Itoh, Yuewei Zhang et James S. Speck. « Sn doping of [beta]-Ga2O3 grown by plasma-assisted molecular beam epitaxy ». Dans Oxide-based Materials and Devices XII, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2021. http://dx.doi.org/10.1117/12.2593236.

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Huang, Xiao. « Effect of Co-Doping on Microstructure, Thermal and Mechanical Properties of Ternary Zirconia-Based Thermal Barrier Coating Materials ». Dans ASME Turbo Expo 2009 : Power for Land, Sea, and Air. ASMEDC, 2009. http://dx.doi.org/10.1115/gt2009-59007.

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7YSZ (yttria stabilized zirconia) was co-doped with metal oxides of different valence, ionic radius and mass in order to investigate microstructural and property changes as a result of co-doping. Mechanical alloying process was used to produce the powder blends which were subsequently sintered at 1500°C for 120 hours. The results from SEM, XRD and DSC showed that the microstructures of the co-doped ternary oxides were affected by the amount of oxygen vacancies in the system, the co-dopant cation radius and mass. Increasing the number of oxygen vacancies by the addition of trivalent co-dopant (Yb2O3 and Sc2O3) as well as the use of larger cations promoted the stabilization of cubic phase. The tetravalent co-dopant (CeO2), on the other hand, had the effect of stabilizing tetragonal phase which may transform into monoclinic phase during cooling, depending on the concentration of tetravalent co-dopant and the mass. Smaller cation mass had the effect of reducing the transformation temperature from tetragonal to monoclinic phase. Pentavalent co-dopants (Nb2O5 and Ta2O5) were found to stabilize the tetragonal phase at high temperature; however, the stability of the tetragonal phase upon cooling was determined by the mass and ionic radius of the co-dopants. Cation clustering was observed during cooling in trivalent oxide co-doped 7YSZ while clustering of trivalent and pentavalent cations in pentavalent co-doped 7YSZ was not detected. Additionally, from the thermal conductivity measurement results, it was found that trivalent oxides exhibited the most significant effect on reducing the thermal conductivity of ternary oxides; this trend was followed by pentavalent co-doping oxides whereas the tetravalent CeO2 co-doped 7YSZ showed marginal effect. A semi-empirical thermal conductivity model was established based on defect cluster model and the predicted room temperature thermal conductivity values were found to be consistent with that measured experimentally. Furthermore, the incorporation of co-dopant oxide in 7YSZ was observed to substantially modify the elastic modulus of the ternary oxides. More specifically, the addition of co-dopant with larger cation radius was found to reduce the elastic modulus of 7YSZ due to the increase in lattice parameter(s).

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Teherani, Ferechteh H., Giti A. Khodaparast, Yaobin V. Xu, Jinsong Wu, Vinayak P. Dravid, Dimitris Pavlidis, Manijeh Razeghi et al. « A review of the growth, doping, and applications of Beta-Ga2O3 thin films ». Dans Oxide-based Materials and Devices IX, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2018. http://dx.doi.org/10.1117/12.2302471.

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Chakrabarti, Subhananda, Sushama Sushama, Punam Murkute, Hemant Ghadi et Vinayak Chavan. « Augmenting optical and structural properties in Zn0.85Mg0.15O thin film with P-B co-doping ». Dans Oxide-based Materials and Devices X, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2019. http://dx.doi.org/10.1117/12.2508716.

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Rapports d'organisations sur le sujet "Oxide doping"

Siskaninetz, William J., J. E. Ehret, J. A. Lott, J. C. Griffith, T. R. Nelson et Jr. Enhanced Performance of Bipolar Cascade Light Emitting Diodes by Doping the Aluminum Oxide Apertures. Fort Belvoir, VA : Defense Technical Information Center, novembre 2004. http://dx.doi.org/10.21236/ada429346.

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Parkinson, Bruce A., et He Jianghua. Combinatorial Discovery and Optimization of the Composition, Doping and Morphology of New Oxide Semiconductors for Efficient Photoelectrochemical Water Splitting. Office of Scientific and Technical Information (OSTI), janvier 2015. http://dx.doi.org/10.2172/1167006.

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Hill, Julienne Marie. Doping Experiments on Low-Dimensional Oxides and a Search for Unusual Magnetic Properties of MgAlB₁₄. Office of Scientific and Technical Information (OSTI), janvier 2002. http://dx.doi.org/10.2172/806588.

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