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Littérature scientifique sur le sujet « Oxide-based heterostructures »
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Articles de revues sur le sujet "Oxide-based heterostructures"
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Lee, Sang Woon. "Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition." Journal of Nanomaterials 2016 (2016): 1–9. http://dx.doi.org/10.1155/2016/1671390.
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Two-dimensional electron gas (2DEG) at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures) with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3(LAO/STO) heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD) technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies).
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Nguyen, Dong Tri, Viet Vu Quoc, Wonhyuk Son, et al. "Growth, domain structure, and magnetic properties of CaMnO3(110) and La0.7Ca0.3MnO3(110) layers synthesized on hexagonal YMnO3(0001)." CrystEngComm 19, no. 35 (2017): 5269–74. http://dx.doi.org/10.1039/c7ce01187c.
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Oxide heterostructures based on cubic perovskite have been studied widely but there has been little interest in the combination of different polymorphs, such as hexagonal and cubic manganites, into a single heterostructure.
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Xiao, Haodong, Lin Lin, Jia Zhu, et al. "Highly sensitive and broadband photodetectors based on WSe2/MoS2 heterostructures with van der Waals contact electrodes." Applied Physics Letters 121, no. 2 (2022): 023504. http://dx.doi.org/10.1063/5.0100191.
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A nanoscale photodetector is a crucial part of intelligent imaging and wireless communication devices. Building van der Waals (vdWs) heterostructures based on two-dimensional transition metal dichalcogenides is thought to be a smart approach for achieving nanoscale photodetectors. However, the pinning effect induced by surface states, defects, and metal-induced gap states during the fabrication process of vdWs heterostructures and contacting electrodes leads to a large Schottky barrier and consequently limits the photoresponse of vdWs heterostructures. In this study, a photodetector based on the WSe2/MoS2 heterostructure with graphene (Gr)/indium tin oxide (ITO) hybrid electrodes has been fabricated. The vdWs contacts established between the exfoliated graphene layers and WSe2/MoS2 heterostructure are able to get rid of lattice damages caused by atom bombardment during the deposition of metal electrodes. In addition, the reduced Schottky barrier at graphene/heterostructure interfaces facilitates the transport of carriers. Experimental results show that the photodetector based on WSe2/MoS2 heterostructures with Gr/ITO hybrid electrodes exhibits a high responsivity of up to 1236.5 A W−1, a detectivity of up to 1.23 × 1013 Jones, and a fast response of 270/130 μs to light from the ultraviolet to near-infrared range.
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Блохин, С. А., В. Н. Неведомский, М. А. Бобров та ін. "Вертикально-излучающие лазеры спектрального диапазона 1.55 мкм, изготовленные по технологии спекания гетероструктур, выращенных методом молекулярно-пучковой эпитаксии из твердотельных источников". Физика и техника полупроводников 54, № 10 (2020): 1088. http://dx.doi.org/10.21883/ftp.2020.10.49947.9463.
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The GaAs-InGaAsP heterointerfaces formation have been studied and optimized using a direct intermolecular wafer bonding (fusion)of an active region heterostructure on an InP substrate and distributed Bragg reflector heterostructures on GaAs substrates for the fabrication of hybrid heterostructures of long-wave vertical-cavity surface-emitting lasers (VCSEL). The heterostructures were grown by solid-source molecular beam epitaxy. It was shown that in the case of incomplete removal of oxide films during the preparation of the wafers before fusion and/or the presence of adsorbed water on the wafer surfaces, the fused interface contains a large number of amorphous inclusions, most likely related to the III-group oxides. Optimization of the formation regimes of a buried tunnel junction on the surface of the InP-based heterostructure made it possible to reduce the surface roughness down to 1 nm and to ensure the thickness of the GaAs-InGaAsP fused interface < 5 nm, with no dislocations or other extended defects in the region of the fused heterointerfaces. The 1.55 μm-range VCSELs fabricated from the hybrid heterostructures created by using the developed technology demonstrate efficient lasing under continuous wave pumping over a wide temperature range, which indicates the high optical quality of the fused heterointerfaces in the VCSEL heterostructure.
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GE, CHEN, KUI-JUAN JIN, HUI-BIN LU, and CONG WANG. "NOVEL PROPERTIES IN OXIDE HETEROSTRUCTURES." Modern Physics Letters B 23, no. 09 (2009): 1129–45. http://dx.doi.org/10.1142/s0217984909019594.
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A brief review of recent investigations in oxide heterostructures is presented. First, experimental results are shown. Positive colossal magnetoresistance with high sensitivities are obtained at low magnetic field (<1000 Oe) nearly at room temperature. Picoseconds photoelectric effects of the rise time ~ 210 ps and the half-maximum ~ 650 ps are also found in some oxide heterostructures. Furthermore, resistance switching characteristic and electric displacement-voltage hysteresis loops have been observed in BaTiO 3-δ/ Si p–n heterostructures. Second, theoretical descriptions are also shown here. A model for the mechanism causing the positive colossal magnetoresistance has been established. Moreover, the transport properties and the important role played by oxygen vacancies are theoretically investigated in oxide heterostructures. In addition, an extended percolation model is well developed, with which the transport characteristic in oxide thin films can be well simulated based on the phase separation scenario. Notably, the interface effects play a crucial role in the multifunctional properties of the oxide heterostructures.
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Trenczek-Zajac, Anita, Joanna Banas-Gac, and Marta Radecka. "TiO2@Cu2O n-n Type Heterostructures for Photochemistry." Materials 14, no. 13 (2021): 3725. http://dx.doi.org/10.3390/ma14133725.
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A TiO2@Cu2O semiconductor heterostructure with better photochemical response compared to TiO2 was obtained using an electrochemical deposition method of Cu2O on the surface of TiO2 nanotubes. The choice of 1D nanotubes was motivated by the possibility of achieving fast charge transfer, which is considered best suited for photochemical applications. The morphology and structural properties of the obtained heterojunction were determined using standard methods —SEM and Raman spectroscopy. Analysis of photoelectrochemical properties showed that TiO2@Cu2O heterostructures exhibit better properties resulting from an interaction with sunlight than TiO2. A close relationship between the morphology of the heterostructures and their photoproperties was also demonstrated. Investigations representing a combination of photoelectrochemical cells for hydrogen production and photocatalysis—photoelectrocatalysis—were also carried out and confirmed the observations on the photoproperties of heterostructures. Analysis of the Mott–Schottky plots as well as photoelectrochemical measurements (Iph-V, Iph-t) showed that TiO2 as well as, unusually, Cu2O exhibit n-type conductivity. On this basis, a new energy diagram of the TiO2@Cu2O system was proposed. It was found that TiO2@Cu2O n-n type heterostructure prevents the processes of photocorrosion of copper(I) oxide contained in a TiO2-based heterostructure.
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Dorovskikh, Svetlana I., Darya D. Klyamer, Evgeny A. Maksimovskiy, et al. "Heterostructures Based on Cobalt Phthalocyanine Films Decorated with Gold Nanoparticles for the Detection of Low Concentrations of Ammonia and Nitric Oxide." Biosensors 12, no. 7 (2022): 476. http://dx.doi.org/10.3390/bios12070476.
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This work is aimed at the development of new heterostructures based on cobalt phthalocyanines (CoPc) and gold nanoparticles (AuNPs), and the evaluation of the prospects of their use to determine low concentrations of ammonia and nitric oxide. For this purpose, CoPc films were decorated with AuNPs by gas-phase methods (MOCVD and PVD) and drop-casting (DC), and their chemiresistive sensor response to low concentrations of NO (10–50 ppb) and NH3 (1–10 ppm) was investigated. A comparative analysis of the characteristics of heterostructures depending on the preparation methods was carried out. The composition, structure, and morphology of the resulting hybrid films were studied by X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma atomic emission (ICP-AES) spectroscopy, as well as electron microscopy methods to discuss the effect of these parameters on the sensor response of hybrid films to ammonia and nitric oxide. It was shown that regardless of the fabrication method, the response of Au/CoPc heterostructures to NH3 and NO gases increased with an increase in the concentration of gold. The sensor response of Au/CoPc heterostructures to NH3 increased 2–3.3 times compared to CoPc film, whereas in the case of NO it increased up to 16 times. The detection limits of the Au/CoPc heterostructure with a gold content of ca. 2.1 µg/cm2 for NH3 and NO were 0.1 ppm and 4 ppb, respectively. It was shown that Au/CoPc heterostructures can be used for the detection of NH3 in a gas mixture simulating exhaled air (N2—74%, O2—16%, H2O—6%, CO2—4%).
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Li, Junjiao, Jun Xie, Dongchen Li, et al. "An Interface Heterostructure of NiO and CeO2 for Using Electrolytes of Low-Temperature Solid Oxide Fuel Cells." Nanomaterials 11, no. 8 (2021): 2004. http://dx.doi.org/10.3390/nano11082004.
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Interface engineering can be used to tune the properties of heterostructure materials at an atomic level, yielding exceptional final physical properties. In this work, we synthesized a heterostructure of a p-type semiconductor (NiO) and an n-type semiconductor (CeO2) for solid oxide fuel cell electrolytes. The CeO2-NiO heterostructure exhibited high ionic conductivity of 0.2 S cm−1 at 530 °C, which was further improved to 0.29 S cm−1 by the introduction of Na+ ions. When it was applied in the fuel cell, an excellent power density of 571 mW cm−1 was obtained, indicating that the CeO2-NiO heterostructure can provide favorable electrolyte functionality. The prepared CeO2-NiO heterostructures possessed both proton and oxygen ionic conductivities, with oxygen ionic conductivity dominating the fuel cell reaction. Further investigations in terms of electrical conductivity and electrode polarization, a proton and oxygen ionic co-conducting mechanism, and a mechanism for blocking electron transport showed that the reconstruction of the energy band at the interfaces was responsible for the enhanced ionic conductivity and cell power output. This work presents a new methodology and scientific understanding of semiconductor-based heterostructures for advanced ceramic fuel cells.
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Slepchenkov, Michael M., Dmitry A. Kolosov, Igor S. Nefedov, and Olga E. Glukhova. "Band Gap Opening in Borophene/GaN and Borophene/ZnO Van der Waals Heterostructures Using Axial Deformation: First-Principles Study." Materials 15, no. 24 (2022): 8921. http://dx.doi.org/10.3390/ma15248921.
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One of the topical problems of materials science is the production of van der Waals heterostructures with the desired properties. Borophene is considered to be among the promising 2D materials for the design of van der Waals heterostructures and their application in electronic nanodevices. In this paper, we considered new atomic configurations of van der Waals heterostructures for a potential application in nano- and optoelectronics: (1) a configuration based on buckled triangular borophene and gallium nitride (GaN) 2D monolayers; and (2) a configuration based on buckled triangular borophene and zinc oxide (ZnO) 2D monolayers. The influence of mechanical deformations on the electronic structure of borophene/GaN and borophene/ZnO van der Waals heterostructures are studied using the first-principles calculations based on density functional theory (DFT) within a double zeta plus polarization (DZP) basis set. Four types of deformation are considered: uniaxial (along the Y axis)/biaxial (along the X and Y axes) stretching and uniaxial (along the Y axis)/biaxial (along the X and Y axes) compression. The main objective of this study is to identify the most effective types of deformation from the standpoint of tuning the electronic properties of the material, namely the possibility of opening the energy gap in the band structure. For each case of deformation, the band structure and density of the electronic states (DOS) are calculated. It is found that the borophene/GaN heterostructure is more sensitive to axial compression while the borophene/ZnO heterostructure is more sensitive to axial stretching. The energy gap appears in the band structure of borophene/GaN heterostructure at uniaxial compression by 14% (gap size of 0.028 eV) and at biaxial compression by 4% (gap size of 0.018 eV). The energy gap appears in the band structure of a borophene/ZnO heterostructure at uniaxial stretching by 10% (gap size 0.063 eV) and at biaxial compression by 6% (0.012 eV). It is predicted that similar heterostructures with an emerging energy gap can be used for various nano- and optoelectronic applications, including Schottky barrier photodetectors.
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Slepchenkov, Michael M., Dmitry A. Kolosov, and Olga E. Glukhova. "First-Principles Study of Electronic and Optical Properties of Tri-Layered van der Waals Heterostructures Based on Blue Phosphorus and Zinc Oxide." Journal of Composites Science 6, no. 6 (2022): 163. http://dx.doi.org/10.3390/jcs6060163.
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The creation of van der Waals heterostructures with tunable properties from various combinations of modern 2D materials is one of the promising tasks of nanoelectronics, focused on improving the parameters of electronic nanodevices. In this paper, using ab initio methods, we theoretically predict the existence of new three-layer van der Waals zinc oxide/blue phosphorus/zinc oxide (ZnO/BlueP/ZnO) heterostructure with AAA, ABA, ABC layer packing types. It is found that AAA-, ABA-, and ABC-stacked ZnO/BlueP/ZnO heterostructures are semiconductors with a gap of about 0.7 eV. The dynamic conductivity and absorption spectra are calculated in the wavelength range of 200–2000 nm. It is revealed that the BlueP monolayer makes the greatest contribution to the formation of the profiles the dynamic conductivity and absorption coefficient spectrums of the ZnO/BlueP/ZnO heterostructure. This is indicated by the fact that, for the ZnO/BlueP/ZnO heterostructure, conductivity anisotropy is observed at different directions of wave polarization, as for blue phosphorus. It has been established that the absorption maximum of the heterostructure falls in the middle ultraviolet range, and, starting from a wavelength of 700 nm, there is a complete absence of absorption. The type of layer packing has practically no effect on the regularities in the formation of the spectra of dynamic conductivity and the absorption coefficient, which is important from the point of view of their application in optoelectronics.