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Articles de revues

Littérature scientifique sur le sujet « Oxide-based heterostructures »

Auteur : Grafiati

Publié le 10 mars 2023

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Articles de revues sur le sujet "Oxide-based heterostructures"

1

Lee, Sang Woon. "Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition." Journal of Nanomaterials 2016 (2016): 1–9. http://dx.doi.org/10.1155/2016/1671390.

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Two-dimensional electron gas (2DEG) at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures) with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3(LAO/STO) heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterost

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Nguyen, Dong Tri, Viet Vu Quoc, Wonhyuk Son, et al. "Growth, domain structure, and magnetic properties of CaMnO3(110) and La0.7Ca0.3MnO3(110) layers synthesized on hexagonal YMnO3(0001)." CrystEngComm 19, no. 35 (2017): 5269–74. http://dx.doi.org/10.1039/c7ce01187c.

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Oxide heterostructures based on cubic perovskite have been studied widely but there has been little interest in the combination of different polymorphs, such as hexagonal and cubic manganites, into a single heterostructure.

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Xiao, Haodong, Lin Lin, Jia Zhu, et al. "Highly sensitive and broadband photodetectors based on WSe₂/MoS₂ heterostructures with van der Waals contact electrodes." Applied Physics Letters 121, no. 2 (2022): 023504. http://dx.doi.org/10.1063/5.0100191.

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A nanoscale photodetector is a crucial part of intelligent imaging and wireless communication devices. Building van der Waals (vdWs) heterostructures based on two-dimensional transition metal dichalcogenides is thought to be a smart approach for achieving nanoscale photodetectors. However, the pinning effect induced by surface states, defects, and metal-induced gap states during the fabrication process of vdWs heterostructures and contacting electrodes leads to a large Schottky barrier and consequently limits the photoresponse of vdWs heterostructures. In this study, a photodetector based on t

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Блохин, С. А., В. Н. Неведомский, М. А. Бобров та ін. "Вертикально-излучающие лазеры спектрального диапазона 1.55 мкм, изготовленные по технологии спекания гетероструктур, выращенных методом молекулярно-пучковой эпитаксии из твердотельных источников". Физика и техника полупроводников 54, № 10 (2020): 1088. http://dx.doi.org/10.21883/ftp.2020.10.49947.9463.

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The GaAs-InGaAsP heterointerfaces formation have been studied and optimized using a direct intermolecular wafer bonding (fusion)of an active region heterostructure on an InP substrate and distributed Bragg reflector heterostructures on GaAs substrates for the fabrication of hybrid heterostructures of long-wave vertical-cavity surface-emitting lasers (VCSEL). The heterostructures were grown by solid-source molecular beam epitaxy. It was shown that in the case of incomplete removal of oxide films during the preparation of the wafers before fusion and/or the presence of adsorbed water on the wafe

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GE, CHEN, KUI-JUAN JIN, HUI-BIN LU, and CONG WANG. "NOVEL PROPERTIES IN OXIDE HETEROSTRUCTURES." Modern Physics Letters B 23, no. 09 (2009): 1129–45. http://dx.doi.org/10.1142/s0217984909019594.

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A brief review of recent investigations in oxide heterostructures is presented. First, experimental results are shown. Positive colossal magnetoresistance with high sensitivities are obtained at low magnetic field (<1000 Oe) nearly at room temperature. Picoseconds photoelectric effects of the rise time ~ 210 ps and the half-maximum ~ 650 ps are also found in some oxide heterostructures. Furthermore, resistance switching characteristic and electric displacement-voltage hysteresis loops have been observed in BaTiO 3-δ/ Si p–n heterostructures. Second, theoretical descriptions are also shown h

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Trenczek-Zajac, Anita, Joanna Banas-Gac, and Marta Radecka. "TiO2@Cu2O n-n Type Heterostructures for Photochemistry." Materials 14, no. 13 (2021): 3725. http://dx.doi.org/10.3390/ma14133725.

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A TiO2@Cu2O semiconductor heterostructure with better photochemical response compared to TiO2 was obtained using an electrochemical deposition method of Cu2O on the surface of TiO2 nanotubes. The choice of 1D nanotubes was motivated by the possibility of achieving fast charge transfer, which is considered best suited for photochemical applications. The morphology and structural properties of the obtained heterojunction were determined using standard methods —SEM and Raman spectroscopy. Analysis of photoelectrochemical properties showed that TiO2@Cu2O heterostructures exhibit better properties

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Dorovskikh, Svetlana I., Darya D. Klyamer, Evgeny A. Maksimovskiy, et al. "Heterostructures Based on Cobalt Phthalocyanine Films Decorated with Gold Nanoparticles for the Detection of Low Concentrations of Ammonia and Nitric Oxide." Biosensors 12, no. 7 (2022): 476. http://dx.doi.org/10.3390/bios12070476.

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This work is aimed at the development of new heterostructures based on cobalt phthalocyanines (CoPc) and gold nanoparticles (AuNPs), and the evaluation of the prospects of their use to determine low concentrations of ammonia and nitric oxide. For this purpose, CoPc films were decorated with AuNPs by gas-phase methods (MOCVD and PVD) and drop-casting (DC), and their chemiresistive sensor response to low concentrations of NO (10–50 ppb) and NH3 (1–10 ppm) was investigated. A comparative analysis of the characteristics of heterostructures depending on the preparation methods was carried out. The

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Li, Junjiao, Jun Xie, Dongchen Li, et al. "An Interface Heterostructure of NiO and CeO2 for Using Electrolytes of Low-Temperature Solid Oxide Fuel Cells." Nanomaterials 11, no. 8 (2021): 2004. http://dx.doi.org/10.3390/nano11082004.

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Interface engineering can be used to tune the properties of heterostructure materials at an atomic level, yielding exceptional final physical properties. In this work, we synthesized a heterostructure of a p-type semiconductor (NiO) and an n-type semiconductor (CeO2) for solid oxide fuel cell electrolytes. The CeO2-NiO heterostructure exhibited high ionic conductivity of 0.2 S cm−1 at 530 °C, which was further improved to 0.29 S cm−1 by the introduction of Na+ ions. When it was applied in the fuel cell, an excellent power density of 571 mW cm−1 was obtained, indicating that the CeO2-NiO hetero

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Slepchenkov, Michael M., Dmitry A. Kolosov, Igor S. Nefedov, and Olga E. Glukhova. "Band Gap Opening in Borophene/GaN and Borophene/ZnO Van der Waals Heterostructures Using Axial Deformation: First-Principles Study." Materials 15, no. 24 (2022): 8921. http://dx.doi.org/10.3390/ma15248921.

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One of the topical problems of materials science is the production of van der Waals heterostructures with the desired properties. Borophene is considered to be among the promising 2D materials for the design of van der Waals heterostructures and their application in electronic nanodevices. In this paper, we considered new atomic configurations of van der Waals heterostructures for a potential application in nano- and optoelectronics: (1) a configuration based on buckled triangular borophene and gallium nitride (GaN) 2D monolayers; and (2) a configuration based on buckled triangular borophene a

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Slepchenkov, Michael M., Dmitry A. Kolosov, and Olga E. Glukhova. "First-Principles Study of Electronic and Optical Properties of Tri-Layered van der Waals Heterostructures Based on Blue Phosphorus and Zinc Oxide." Journal of Composites Science 6, no. 6 (2022): 163. http://dx.doi.org/10.3390/jcs6060163.

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The creation of van der Waals heterostructures with tunable properties from various combinations of modern 2D materials is one of the promising tasks of nanoelectronics, focused on improving the parameters of electronic nanodevices. In this paper, using ab initio methods, we theoretically predict the existence of new three-layer van der Waals zinc oxide/blue phosphorus/zinc oxide (ZnO/BlueP/ZnO) heterostructure with AAA, ABA, ABC layer packing types. It is found that AAA-, ABA-, and ABC-stacked ZnO/BlueP/ZnO heterostructures are semiconductors with a gap of about 0.7 eV. The dynamic conductivi

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