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Littérature scientifique sur le sujet « Oxide-based heterostructures »

Auteur : Grafiati

Publié le 10 mars 2023

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Articles de revues sur le sujet "Oxide-based heterostructures"

Lee, Sang Woon. « Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition ». Journal of Nanomaterials 2016 (2016) : 1–9. http://dx.doi.org/10.1155/2016/1671390.

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Two-dimensional electron gas (2DEG) at an oxide interface has been attracting considerable attention for physics research and nanoelectronic applications. Early studies reported the formation of 2DEG at semiconductor interfaces (e.g., AlGaAs/GaAs heterostructures) with interesting electrical properties such as high electron mobility. Besides 2DEG formation at semiconductor junctions, 2DEG was realized at the interface of an oxide heterostructure such as the LaAlO3/SrTiO3(LAO/STO) heterojunction. The origin of 2DEG was attributed to the well-known “polar catastrophe” mechanism in oxide heterostructures, which consist of an epitaxial LAO layer on a single crystalline STO substrate among proposed mechanisms. Recently, it was reported that the creation of 2DEG was achieved using the atomic layer deposition (ALD) technique, which opens new functionality of ALD in emerging nanoelectronics. This review is focused on the origin of 2DEG at oxide heterostructures using the ALD process. In particular, it addresses the origin of 2DEG at oxide interfaces based on an alternative mechanism (i.e., oxygen vacancies).

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Nguyen, Dong Tri, Viet Vu Quoc, Wonhyuk Son, Jong-Soo Rhyee, Tae-Yeong Koo, Seungwoo Song, Nam-Suk Lee et Heon-Jung Kim. « Growth, domain structure, and magnetic properties of CaMnO3(110) and La0.7Ca0.3MnO3(110) layers synthesized on hexagonal YMnO3(0001) ». CrystEngComm 19, n^o 35 (2017) : 5269–74. http://dx.doi.org/10.1039/c7ce01187c.

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Oxide heterostructures based on cubic perovskite have been studied widely but there has been little interest in the combination of different polymorphs, such as hexagonal and cubic manganites, into a single heterostructure.

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Xiao, Haodong, Lin Lin, Jia Zhu, Junxiong Guo, Yizhen Ke, Linna Mao, Tianxun Gong, Huanyu Cheng, Wen Huang et Xiaosheng Zhang. « Highly sensitive and broadband photodetectors based on WSe₂/MoS₂ heterostructures with van der Waals contact electrodes ». Applied Physics Letters 121, n^o 2 (11 juillet 2022) : 023504. http://dx.doi.org/10.1063/5.0100191.

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A nanoscale photodetector is a crucial part of intelligent imaging and wireless communication devices. Building van der Waals (vdWs) heterostructures based on two-dimensional transition metal dichalcogenides is thought to be a smart approach for achieving nanoscale photodetectors. However, the pinning effect induced by surface states, defects, and metal-induced gap states during the fabrication process of vdWs heterostructures and contacting electrodes leads to a large Schottky barrier and consequently limits the photoresponse of vdWs heterostructures. In this study, a photodetector based on the WSe2/MoS2 heterostructure with graphene (Gr)/indium tin oxide (ITO) hybrid electrodes has been fabricated. The vdWs contacts established between the exfoliated graphene layers and WSe2/MoS2 heterostructure are able to get rid of lattice damages caused by atom bombardment during the deposition of metal electrodes. In addition, the reduced Schottky barrier at graphene/heterostructure interfaces facilitates the transport of carriers. Experimental results show that the photodetector based on WSe2/MoS2 heterostructures with Gr/ITO hybrid electrodes exhibits a high responsivity of up to 1236.5 A W−1, a detectivity of up to 1.23 × 1013 Jones, and a fast response of 270/130 μs to light from the ultraviolet to near-infrared range.

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Блохин, С. А., В. Н. Неведомский, М. А. Бобров, Н. А. Малеев, А. А. Блохин, А. Г. Кузьменков, А. П. Васильев et al. « Вертикально-излучающие лазеры спектрального диапазона 1.55 мкм, изготовленные по технологии спекания гетероструктур, выращенных методом молекулярно-пучковой эпитаксии из твердотельных источников ». Физика и техника полупроводников 54, n^o 10 (2020) : 1088. http://dx.doi.org/10.21883/ftp.2020.10.49947.9463.

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The GaAs-InGaAsP heterointerfaces formation have been studied and optimized using a direct intermolecular wafer bonding (fusion)of an active region heterostructure on an InP substrate and distributed Bragg reflector heterostructures on GaAs substrates for the fabrication of hybrid heterostructures of long-wave vertical-cavity surface-emitting lasers (VCSEL). The heterostructures were grown by solid-source molecular beam epitaxy. It was shown that in the case of incomplete removal of oxide films during the preparation of the wafers before fusion and/or the presence of adsorbed water on the wafer surfaces, the fused interface contains a large number of amorphous inclusions, most likely related to the III-group oxides. Optimization of the formation regimes of a buried tunnel junction on the surface of the InP-based heterostructure made it possible to reduce the surface roughness down to 1 nm and to ensure the thickness of the GaAs-InGaAsP fused interface < 5 nm, with no dislocations or other extended defects in the region of the fused heterointerfaces. The 1.55 μm-range VCSELs fabricated from the hybrid heterostructures created by using the developed technology demonstrate efficient lasing under continuous wave pumping over a wide temperature range, which indicates the high optical quality of the fused heterointerfaces in the VCSEL heterostructure.

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GE, CHEN, KUI-JUAN JIN, HUI-BIN LU et CONG WANG. « NOVEL PROPERTIES IN OXIDE HETEROSTRUCTURES ». Modern Physics Letters B 23, n^o 09 (10 avril 2009) : 1129–45. http://dx.doi.org/10.1142/s0217984909019594.

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A brief review of recent investigations in oxide heterostructures is presented. First, experimental results are shown. Positive colossal magnetoresistance with high sensitivities are obtained at low magnetic field (<1000 Oe) nearly at room temperature. Picoseconds photoelectric effects of the rise time ~ 210 ps and the half-maximum ~ 650 ps are also found in some oxide heterostructures. Furthermore, resistance switching characteristic and electric displacement-voltage hysteresis loops have been observed in BaTiO 3-δ/ Si p–n heterostructures. Second, theoretical descriptions are also shown here. A model for the mechanism causing the positive colossal magnetoresistance has been established. Moreover, the transport properties and the important role played by oxygen vacancies are theoretically investigated in oxide heterostructures. In addition, an extended percolation model is well developed, with which the transport characteristic in oxide thin films can be well simulated based on the phase separation scenario. Notably, the interface effects play a crucial role in the multifunctional properties of the oxide heterostructures.

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Trenczek-Zajac, Anita, Joanna Banas-Gac et Marta Radecka. « TiO2@Cu2O n-n Type Heterostructures for Photochemistry ». Materials 14, n^o 13 (2 juillet 2021) : 3725. http://dx.doi.org/10.3390/ma14133725.

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A TiO2@Cu2O semiconductor heterostructure with better photochemical response compared to TiO2 was obtained using an electrochemical deposition method of Cu2O on the surface of TiO2 nanotubes. The choice of 1D nanotubes was motivated by the possibility of achieving fast charge transfer, which is considered best suited for photochemical applications. The morphology and structural properties of the obtained heterojunction were determined using standard methods —SEM and Raman spectroscopy. Analysis of photoelectrochemical properties showed that TiO2@Cu2O heterostructures exhibit better properties resulting from an interaction with sunlight than TiO2. A close relationship between the morphology of the heterostructures and their photoproperties was also demonstrated. Investigations representing a combination of photoelectrochemical cells for hydrogen production and photocatalysis—photoelectrocatalysis—were also carried out and confirmed the observations on the photoproperties of heterostructures. Analysis of the Mott–Schottky plots as well as photoelectrochemical measurements (Iph-V, Iph-t) showed that TiO2 as well as, unusually, Cu2O exhibit n-type conductivity. On this basis, a new energy diagram of the TiO2@Cu2O system was proposed. It was found that TiO2@Cu2O n-n type heterostructure prevents the processes of photocorrosion of copper(I) oxide contained in a TiO2-based heterostructure.

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Dorovskikh, Svetlana I., Darya D. Klyamer, Evgeny A. Maksimovskiy, Victoria V. Volchek, Sergey M. Zharkov, Natalia B. Morozova et Tamara V. Basova. « Heterostructures Based on Cobalt Phthalocyanine Films Decorated with Gold Nanoparticles for the Detection of Low Concentrations of Ammonia and Nitric Oxide ». Biosensors 12, n^o 7 (30 juin 2022) : 476. http://dx.doi.org/10.3390/bios12070476.

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This work is aimed at the development of new heterostructures based on cobalt phthalocyanines (CoPc) and gold nanoparticles (AuNPs), and the evaluation of the prospects of their use to determine low concentrations of ammonia and nitric oxide. For this purpose, CoPc films were decorated with AuNPs by gas-phase methods (MOCVD and PVD) and drop-casting (DC), and their chemiresistive sensor response to low concentrations of NO (10–50 ppb) and NH3 (1–10 ppm) was investigated. A comparative analysis of the characteristics of heterostructures depending on the preparation methods was carried out. The composition, structure, and morphology of the resulting hybrid films were studied by X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma atomic emission (ICP-AES) spectroscopy, as well as electron microscopy methods to discuss the effect of these parameters on the sensor response of hybrid films to ammonia and nitric oxide. It was shown that regardless of the fabrication method, the response of Au/CoPc heterostructures to NH3 and NO gases increased with an increase in the concentration of gold. The sensor response of Au/CoPc heterostructures to NH3 increased 2–3.3 times compared to CoPc film, whereas in the case of NO it increased up to 16 times. The detection limits of the Au/CoPc heterostructure with a gold content of ca. 2.1 µg/cm2 for NH3 and NO were 0.1 ppm and 4 ppb, respectively. It was shown that Au/CoPc heterostructures can be used for the detection of NH3 in a gas mixture simulating exhaled air (N2—74%, O2—16%, H2O—6%, CO2—4%).

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Li, Junjiao, Jun Xie, Dongchen Li, Lei Yu, Chaowei Xu, Senlin Yan et Yuzheng Lu. « An Interface Heterostructure of NiO and CeO2 for Using Electrolytes of Low-Temperature Solid Oxide Fuel Cells ». Nanomaterials 11, n^o 8 (5 août 2021) : 2004. http://dx.doi.org/10.3390/nano11082004.

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Interface engineering can be used to tune the properties of heterostructure materials at an atomic level, yielding exceptional final physical properties. In this work, we synthesized a heterostructure of a p-type semiconductor (NiO) and an n-type semiconductor (CeO2) for solid oxide fuel cell electrolytes. The CeO2-NiO heterostructure exhibited high ionic conductivity of 0.2 S cm−1 at 530 °C, which was further improved to 0.29 S cm−1 by the introduction of Na+ ions. When it was applied in the fuel cell, an excellent power density of 571 mW cm−1 was obtained, indicating that the CeO2-NiO heterostructure can provide favorable electrolyte functionality. The prepared CeO2-NiO heterostructures possessed both proton and oxygen ionic conductivities, with oxygen ionic conductivity dominating the fuel cell reaction. Further investigations in terms of electrical conductivity and electrode polarization, a proton and oxygen ionic co-conducting mechanism, and a mechanism for blocking electron transport showed that the reconstruction of the energy band at the interfaces was responsible for the enhanced ionic conductivity and cell power output. This work presents a new methodology and scientific understanding of semiconductor-based heterostructures for advanced ceramic fuel cells.

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Slepchenkov, Michael M., Dmitry A. Kolosov, Igor S. Nefedov et Olga E. Glukhova. « Band Gap Opening in Borophene/GaN and Borophene/ZnO Van der Waals Heterostructures Using Axial Deformation : First-Principles Study ». Materials 15, n^o 24 (13 décembre 2022) : 8921. http://dx.doi.org/10.3390/ma15248921.

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One of the topical problems of materials science is the production of van der Waals heterostructures with the desired properties. Borophene is considered to be among the promising 2D materials for the design of van der Waals heterostructures and their application in electronic nanodevices. In this paper, we considered new atomic configurations of van der Waals heterostructures for a potential application in nano- and optoelectronics: (1) a configuration based on buckled triangular borophene and gallium nitride (GaN) 2D monolayers; and (2) a configuration based on buckled triangular borophene and zinc oxide (ZnO) 2D monolayers. The influence of mechanical deformations on the electronic structure of borophene/GaN and borophene/ZnO van der Waals heterostructures are studied using the first-principles calculations based on density functional theory (DFT) within a double zeta plus polarization (DZP) basis set. Four types of deformation are considered: uniaxial (along the Y axis)/biaxial (along the X and Y axes) stretching and uniaxial (along the Y axis)/biaxial (along the X and Y axes) compression. The main objective of this study is to identify the most effective types of deformation from the standpoint of tuning the electronic properties of the material, namely the possibility of opening the energy gap in the band structure. For each case of deformation, the band structure and density of the electronic states (DOS) are calculated. It is found that the borophene/GaN heterostructure is more sensitive to axial compression while the borophene/ZnO heterostructure is more sensitive to axial stretching. The energy gap appears in the band structure of borophene/GaN heterostructure at uniaxial compression by 14% (gap size of 0.028 eV) and at biaxial compression by 4% (gap size of 0.018 eV). The energy gap appears in the band structure of a borophene/ZnO heterostructure at uniaxial stretching by 10% (gap size 0.063 eV) and at biaxial compression by 6% (0.012 eV). It is predicted that similar heterostructures with an emerging energy gap can be used for various nano- and optoelectronic applications, including Schottky barrier photodetectors.

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Slepchenkov, Michael M., Dmitry A. Kolosov et Olga E. Glukhova. « First-Principles Study of Electronic and Optical Properties of Tri-Layered van der Waals Heterostructures Based on Blue Phosphorus and Zinc Oxide ». Journal of Composites Science 6, n^o 6 (2 juin 2022) : 163. http://dx.doi.org/10.3390/jcs6060163.

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The creation of van der Waals heterostructures with tunable properties from various combinations of modern 2D materials is one of the promising tasks of nanoelectronics, focused on improving the parameters of electronic nanodevices. In this paper, using ab initio methods, we theoretically predict the existence of new three-layer van der Waals zinc oxide/blue phosphorus/zinc oxide (ZnO/BlueP/ZnO) heterostructure with AAA, ABA, ABC layer packing types. It is found that AAA-, ABA-, and ABC-stacked ZnO/BlueP/ZnO heterostructures are semiconductors with a gap of about 0.7 eV. The dynamic conductivity and absorption spectra are calculated in the wavelength range of 200–2000 nm. It is revealed that the BlueP monolayer makes the greatest contribution to the formation of the profiles the dynamic conductivity and absorption coefficient spectrums of the ZnO/BlueP/ZnO heterostructure. This is indicated by the fact that, for the ZnO/BlueP/ZnO heterostructure, conductivity anisotropy is observed at different directions of wave polarization, as for blue phosphorus. It has been established that the absorption maximum of the heterostructure falls in the middle ultraviolet range, and, starting from a wavelength of 700 nm, there is a complete absence of absorption. The type of layer packing has practically no effect on the regularities in the formation of the spectra of dynamic conductivity and the absorption coefficient, which is important from the point of view of their application in optoelectronics.

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Thèses sur le sujet "Oxide-based heterostructures"

Preisler, Edward J. McGill T. C. « Investigation of novel semiconductor heterostructure systems : I. Cerium oxide/silicon heterostructures ; II. 6.1 Å semiconductor-based avalanche photodiodes / ». Diss., Pasadena, Calif. : California Institute of Technology, 2003. http://resolver.caltech.edu/CaltechETD:etd-06022003-071834.

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GIAMPIETRI, ALESSIO. « GROWTH, LOCAL STRUCTURAL AND ELECTRONIC PROPERTIES, AND BAND ALIGNMENT AT SRTIO3-BASED ALL-OXIDE HETEROJUNCTIONS ». Doctoral thesis, Università degli Studi di Milano, 2017. http://hdl.handle.net/2434/476679.

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Recent advances in the growth of epitaxial oxide thin films have fostered a steady increase of research on oxide heterojunctions, which are now produced with unprecedented quality. Applications of these systems in the field of electronics, photovoltaics and photocatalysis strongly rely on the capability to master band gap engineering on the atomic scale. Strontium titanate (SrTiO3) is the substrate of choice commonly used in the production of all-oxide heterostructures, as in many cases these systems display a two dimensional electron gas (2DEG) confined at the interface, such as in the LaAlO3/SrTiO3 junction. The band offsets at the interface determine on which of the constituent materials the 2DEG will be confined, and provide additional information on the degree of confinement as well, so the study of the band alignment in oxide-based heterostructures is of crucial importance. Novel properties and functionalities can be achieved upon substitution of LaAlO3 with other oxide materials, an example being the BiFeO3 perovskite. In fact, BiFeO3 is a multiferroic material, and a complete control of the BiFeO3/SrTiO3 heterostructure may allow the tuning of the 2DEG at the interface through the application of an external electric or magnetic field. A 2DEG is also observed in the Al2O3/SrTiO3 junction, which show electron mobilities greater than those previously measured in perovskite-based heterojunctions. Despite in many structures the 2DEG is not observed, different interesting applications can still be obtained, such as in the CuO/SrTiO3 heterostructure, which is a promising material for the production of solar cells and for photoelectrochemical water splitting applications. The main objective of this work is to demonstrate the growth of high quality BiFeO3/SrTiO3, Al2O3/SrTiO3 and CuO/SrTiO3 heterostructures by off-axis sputtering, and to provide a detailed analysis of the interface properties. The band alignment at the interface is thus measured and discussed for each of these materials.

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Mirjolet, Mathieu. « Transparent Conducting Oxides Based on Early Transition Metals : From Electrical and Optical Properties of Epitaxial Thin Films, to Integration in All-Oxide Photoabsorbing Heterostructures ». Doctoral thesis, Universitat Autònoma de Barcelona, 2021. http://hdl.handle.net/10803/673687.

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Els òxids conductors transparents (TCO) són essencials en dispositius tecnològics. La seva capacitat per combinar una alta conductivitat elèctrica i transparència òptica a la llum visible, els fa particularment útils en una gran varietat de dispositius: pantalles, cèl·lules solars, finestres intel·ligents, etc. L’òxid d’indi i estany (ITO) és fins ara el TCO més estès. Un gran inconvenient de l’ITO és el seu alt cost ja que l’indi, el seu component principal, és un material escàs. D’altra banda, alguns òxids metàl·lics intrínsecs de metalls de transició també són transparents. En aquests materials, la banda (3,4)d és estreta i parcialment plena. És la responsable de l’alta densitat de portadors lliures i la seva massa efectiva gran fa que la llum no es reflecteixi en el visible i que el llindar de reflexió (freqüència de plasma) estigui a la regió de l’IR proper. En aquesta tesi, hem explorat les propietats de les pel·lícules primes d’òxids metàl·lics (SrVO3 (SVO; 3d1) i SrNbO3 (SNO; 4d1)) crescudes per deposició de làser polsat (PLD). Atès que la qualitat epitaxial és fonamental per obtenir bones propietats funcionals, el primer pas va consistir en optimitzar els paràmetres de creixement de les pel·lícules SVO/SNO. Les pel·lícules han de créixer en ultra alt buit (UHV) per estabilitzar l’estat d’oxidació 4+ de V/Nb i usar temperatures de dipòsit altes (700-800° C) per permetre la mobilitat de les espècies sobre el substrat. No obstant això, l’ablació a UHV i l’expansió de la ploma del PLD, molt enèrgica, provoquen la creació de defectes puntuals en les pel·lícules. Hem resolt aquest problema utilitzant un gas inert durant el creixement, que controla l’expansió de la ploma. Finalment, hem estudiat l’impacte de la deformació epitaxial en la conductivitat elèctrica i transparència òptica. Es van obtenir pel·lícules amb una conductivitat més gran que ITO i una transparència similar. D’altra banda, l’observació que la freqüència de plasma en aquests materials estigui a l’IR proper, s’atribueix comunament a un augment de la massa efectiva dels electrons degut les correlacions e-e dins de la banda estreta 3d. Després d’una anàlisi sistemàtica de les dades de transport de SVO vam arribar a la conclusió que la teoria del líquid de Fermi no pot explicar l’augment de la massa efectiva dels portadors. En canvi, hem suggerit que l’acoblament electró-fonó i el caràcter 2D de la superfície de Fermi són molt importants. A més, hem demostrat que la imatge clàssica de banda rígida, d’un electró lliure que evoluciona en una banda 3d-t2g, és només una aproximació, com ho demostra la hibridació observada dels orbitals V 3d i O 2p. Hem observat també que la tensió epitaxial, afecta la hibridació, l’ordre orbital i últimament a la resistivitat de les capes. Hem pogut observar i explicar que a la freqüència de plasma s’exciten, en les condicions d’il·luminació adequades, plasmons de volum. Una observació i descripció poc freqüents i que, en essència, estan relacionades amb la component π de la polarització de la llum i el gradient de càrrega en la superfície del material. Finalment, hem provat la idoneïtat de SVO com elèctrode en heteroestructures fotoabsorbents “tot-òxids”. Hem observat la resposta fotovoltaica, usant capes epitaxials de LaFeO3 com absorbent, i hem posat en relleu el paper de la funció de treball de l’elèctrode en el rendiment del dispositiu. Com perspectiva, hem demostrat que els elèctrodes transparents desenvolupats (SVO i SNO), en tenir funcions de treball diferents, poden permetre ajustar i optimitzar els dispositius. Aquest treball aporta un nou coneixement fonamental de les propietats d’òxids i demostra la seva versatilitat en component fotovoltaics.
Los óxidos conductores transparentes (TCO) son esenciales en dispositivos tecnológicos. Su capacidad para combinar alta conductividad eléctrica y transparencia óptica a la luz visible los hace particularmente útiles en una gran variedad de dispositivos: pantallas, células solares, ventanas inteligentes, etc. El óxido de indio y estaño (ITO) es hasta ahora el TCO más extendido. Un gran inconveniente del ITO es su alto coste ya que el indio, su componente principal, es un material escaso. Por otro lado, algunos óxidos metálicos intrínsecos de metales de transición también son transparentes. En estos materiales, la banda (3,4)d es estrecha y parcialmente llena. Es la responsable de la alta densidad de portadores libres y su masa efectiva grande hace que la luz no se refleje en el visible y que el borde de reflexión (frecuencia de plasma) esté en la región del IR cercano. En esta tesis, hemos explorado las propiedades de las películas delgadas de óxidos metálicos (SrVO3 (SVO; 3d1) y SrNbO3 (SNO; 4d1)) crecidas por deposición de láser pulsado (PLD). Dado que la calidad epitaxial es fundamental para obtener buenas propiedades funcionales, el primer paso consistió en optimizar los parámetros de crecimiento de las películas SVO/SNO. Las películas deben crecerse en ultra alto vacío (UHV) para estabilizar el estado de oxidación 4+ de V/Nb y usar temperaturas de depósito altas (700-800°C) para permitir la movilidad de las especies sobre el sustrato. Sin embargo, la ablación en UHV y la expansión de la pluma del PLD, muy enérgica, provocan la creación de defectos puntuales en las películas. Hemos resuelto este problema utilizando un gas inerte durante el crecimiento, que controla la expansión de la pluma. Finalmente, hemos estudiado el impacto de la deformación epitaxial en la conductividad eléctrica y la transparencia óptica. Se obtuvieron películas con una conductividad mayor que ITO y una transparencia similar. Por otra parte, la observación de que la frecuencia de plasma en estos materiales esté en el IR cercano, se atribute comúnmente a un aumento de la masa efectiva de los electrones debido a las correlaciones e-e dentro de la banda estrecha 3d. Tras un análisis sistemático de los datos de transporte de SVO llegamos a la conclusión de que la teoría del líquido de Fermi no puede explicar el aumento de la masa efectiva de los portadores. En cambio, hemos sugerido que el acoplamiento electrón-fonón y el carácter 2D de la superficie de Fermi juegan un papel importante. Además, hemos demostrado que la imagen clásica de banda rígida, de un electrón libre que evoluciona en una banda 3d-t2g es solo una aproximación, como lo demuestra la hibridación observada de los orbitales V-3d y O-2p. Hemos observado también que la tensión epitaxial, afecta a la hibridación, el orden orbital y últimamente a la resistividad de las capas. Hemos podido observar y explicar que a la frecuencia de plasma se excitan, en las condiciones de iluminación adecuadas, pasmones de volumen. Una observación y descripción poco frecuentes y que, en esencia, están relacionadas con la componente π de la polarización de la luz y el gradiente de carga en la superficie del material. Finalmente, hemos probado la idoneidad de SVO como electrodo en heteroestructuras fotoabsorbentes “todo-óxido”. Hemos observado la respuesta fotovoltaica, usando capas epitaxiales de LaFeO3 como absorbente y hemos puesto de relieve el papel de la función de trabajo del electrodo en el rendimiento del dispositivo. Como perspectiva, hemos demostrado que los electrodos transparentes SVO y SNO, al tener funciones de trabajo distintas, podrán permitir ajustar y optimizar los dispositivos. Este trabajo aporta un nuevo conocimiento fundamental de las propiedades de óxidos y demuestra su versatilidad en componentes fotovoltaicos.
Transparent conducting oxides (TCOs) are key elements to many technological devices. Their ability to combine high electrical conductivity and high optical transparency to visible light, make them particularly useful in a myriad of devices such as displays, solar cells, smart windows, etc. Indium tin oxide (ITO) is so far the most widespread TCO. By Sn-doping, this wide band gap In2O3 semiconductor can reach low resistivity (only about two orders of magnitude above conventional metals) while preserving its transparency. A major drawback of ITO is its high cost as indium, its main component, is a scarce material. Moreover, due to its nature of doped-semiconductor, some physical limits impose that its properties cannot be further improved. On the other hand, some intrinsic metallic oxides composed of early transition metals also turn out to be transparent. In these materials, the partially filled narrow d band is responsible for high density of free carriers with increased effective mass, thus bringing the reflection edge down to the near-IR region. In this thesis, we were interested in exploring the properties of metallic oxide thin films grown by pulsed laser deposition (PLD), namely SrVO3 (SVO; 3d1) and SrNbO3 (SNO; 4d1). As high epitaxial quality is essential to obtain good functional properties, the first step consisted in optimizing the growth parameters for single phase and flat SVO/SNO films, displaying high crystallinity, conductivity and transparency. As anticipated, films need to be grown in ultra-high vacuum (UHV) to stabilize the 4+ oxidation state of V/Nb and using a high substrate temperature (700-800°C) to allow good mobility of the species on the substrate. However, the deposition in UHV and its subsequent highly energetic PLD plasma plume lead to a high concentration of point defects. We have solved this issue by using an inert background gas. Finally, we have studied the impact of epitaxial strain on the electrical conductivity and optical transparency window. All in all, it turned out that optimal films display larger conductivity than ITO, for a similar transparency. Conventional wisdom would suggest that a low plasma frequency would be due to the electron-electron correlations within the narrow nd1 band. In a systematic analysis of SVO transport data (temperature-dependent resistivity, etc.), we have concluded that the Fermi liquid theory alone cannot account for the carrier mass enhancement. Instead, we have suggested that the 2D-like Fermi surface and the electron-phonon coupling play a major role. In addition, we have shown that the classical rigid band picture, of one free electron evolving in a 3d-t2g band is only a rough approximation, as attested by the observed hybridization of the V 3d and O 2p orbitals. Moreover, strain affects this hybridization by modifying the orbital hierarchy and covalency which could be responsible for the observed strain-dependent resistivity and effective mass. By appropriate optical measurements, we have also discussed the nature of the plasmonic excitations at plasma frequency in SNO and SVO films. Interestingly, the possibility of exciting volume plasmons in these TCOs gives a glimpse on their potential applications in the field of plasmonics. Finally, we have tested the suitability of SVO as electrode in photoabsorbing all-oxide heterostructures. In particular, we have successfully observed a photovoltaic effect in LaFeO3-based capacitors and disclosed the important role of the electrode work function on the device performances. As outlook, we have concluded that SVO and SNO, by having distinct work functions, could allow to tune any device properties. This work demonstrates the suitability and high potential of this whole new category of TCOs as electrode material in all-oxide devices. We are convinced that it opens the way to a plethora of possible devices, photovoltaic-wise or other.
Universitat Autònoma de Barcelona. Programa de Doctorat en Física

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Malibo, Petrus Molaoa. « Development of heterostructured tin oxide nanocatalysts for the synthesis of bio-based maleic acid ». University of Western Cape, 2021. http://hdl.handle.net/11394/8438.

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Philosophiae Doctor - PhD
Maleic acid (MA) is a key intermediate for the synthesis of polyester resins, surface coatings, lubricant additives, plasticizers, copolymers, pharmaceuticals and agricultural chemicals. The current industrial production of MA is an energy-intensive gas-phase oxidation process of n-butane. The dwindling fossil resources and environmental issues have brought about a worldwide paradigm shift from fossil feedstocks to biomass resources for the sustainable production of fuel and chemicals. Furfural (FFR) and 5-hydroxymethylfurfural (HMF) are excellent biomass-derived platform chemicals, which present an alternative route for the production of renewable bio-based MA. There has been considerable success achieved in the oxidation of furfural and HMF to maleic acid and maleic anhydride with different catalysts in recent years.

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Brandt, Matthias. « Inﬂuence of the electric polarization on carrier transport and recombination dynamics in ZnO-based heterostructures ». Doctoral thesis, Universitätsbibliothek Leipzig, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-61074.

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Die vorliegende Arbeit befasst sich mit dem Einfluss der elektrischen Polarisation auf Eigenschaften freier Träger in ZnO basierten Halbleiterheterostrukturen. Dabei werden insbesondere Transporteigenschaften freier Träger sowie deren Rekombinationsdynamik untersucht. Die Arbeit behandelt vier inhaltliche Schwerpunkte. Der erste Schwerpunkt liegt auf den physikalischen Eigenschaften der verwendeten Materialen, hier wird der Zusammenhang der Bandlücke und der Gitterkonstanten von MgZnO Dünnfilmen und deren Magnesiumgehalt beschrieben. Weiterhin wird die Morphologie solcher Filme diskutiert. Auf unterschiedliche Substrate und Abscheidebedingungen wird dabei detailliert eingegangen. Der zweite Schwerpunkt behandelt die Eigenschaften undotierter und phosphordotierter ZnO und MgZnO Dünnfilme. Die strukturellen, Transport- und Lumineszenzeigenschaften werden hier verglichen und Rückschlüsse auf die Züchtungsbedingungen gezogen. Im dritten Schwerpunkt werden Quanteneffekte an ZnO/MgZnO Grenzflaechen behandelt. Hierbei wird insbesondere auf den Einfluss der elektrischen Polarisation eingegangen. Die Präsenz eines zweidimensionalen Elektronengases wird nachgewiesen, und die notwendigen Bedingungen zur Entstehung des sogenannten qunatum confined Stark-effects werden dargelegt. Insbesondere wird hier auf züchtungsrelevante Parameter eingegangen. Den vierten Schwerpunkt stellen Kopplungsphänomene in ZnO/BaTiO3 Heterostrukturen dar. Dabei werden zuerst die experimentell beobachten Eigenschaften verschiedener Heterostrukturen die auf unterschiedlichen Substraten gezüchtet wurden aufgezeigt. Hier stehen strukturelle und Transporteigenschaften im Vordergrund. Ein Modell zur Beschreibung der Ausbildung von Raumladungszonen in derartigen Heterostrukturen wird eingeführt und zur Beschreibung der experimentellen Ergebnisse angewandt. Die Nutzbarkeit der ferroelektrischen Eigenschaften des Materials BaTiO3 in Kombination mit halbleitendem ZnO wurden untersucht. Hierzu wurden ferroelektrische Feldeffekttransistoren unter Verwendung beider Materialien hergestellt. Die prinzipielle Eignung der Bauelemente als nichtflüchtige Speicherelemente wurde nachgewiesen.

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Jayasinghe, Aroshan Park Kenneth T. « Fabrication of a single layer organic photovoltaic device based on an indium-tin-oxide/copper phthalocyanine/aluminum heterostructure ». Waco, Tex. : Baylor University, 2006. http://hdl.handle.net/2104/4855.

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Park, Se Young. « Electronic and optical properties of titanate-based oxide heterostructures ». Thesis, 2014. https://doi.org/10.7916/D8959G33.

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In this thesis we study properties of transition metal oxide heterostructures and superlattices, including electronic structures, optical responses, and metal-insulator transitions. We start with a general discussion of the properties of transition metal oxides, primarily ABO₃ (A: rare earth ion, B: transition metal, O:oxygen) perovskites. We introduce the effect of A-site substitution on the electronic and magnetic properties in bulk perovskites, followed by the basic properties of oxide heterostructures and superlattices composed of two different ABO₃ perovskites focusing on the metal insulator transitions and properties of the interface electron gas. Next, we present calculations of the charge density profile, subband occupancy and ellipsometry spectra of the electron gas at the LaAlO₃/SrTiO₃ interface. The calculations employ self-consistent Hartree and random phase approximations. We discuss the dependence of spatial structure and subband occupancy on the magnitude of the polarization charge at the interface and spatial structure of the dielectric constant. The response to applied AC electric fields is calculated and the results are presented in terms of the ellipsometry angles. Our results show a dip in the ellipsometry spectrum near the longitudinal optic phonon frequency of the SrTiO₃ and a peak at higher energy, which are related to the in-plane Drude response and the out-of-plane plasmon excitation, respectively. The relation of the features to the subband occupancies and the in-plane conductivities is given. We conclude with the study of thickness dependent metal-insulator transitions in superlattices composed of Mott insulating GdTiO₃ and band insulating SrTiO₃ using a first-principles GGA+U method. The structural and metal-insulator phase diagrams with respect to the number of unit cells, n, of SrTiO₃ and on-site correlation U are presented, showing that there are two different insulating phases for n>1 and n=1. For superlattices with n>1 the insulating phase involves both charge and orbital ordering with associated structures in Ti-O bond lengths but for n=1 superlattices, we find an insulating phase driven by orbital ordering within the quasi one-dimensional bonding bands across the SrO layer. The inconsistencies with experiment suggests the importance of the many-body correlations.

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Preisler, Edward James. « Investigation of Novel Semiconductor Heterostructure Systems : I. Cerium Oxide/Silicon Heterostructures. II. 6.1 Å Semiconductor-Based Avalanche Photodiodes ». Thesis, 2003. https://thesis.library.caltech.edu/2373/1/master_final.pdf.

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The work presented in this thesis concerns the development of two different semiconductor heterostructure technologies.

Part I describes research in the CeO2/silicon heterostructure system. Details are presented concerning the growth of CeO2 on silicon and the reactions that take place at the CeO2/silicon interface. The evolution of this interface as a function of annealing temperature and annealing ambient are studied via in situ x-ray photoelectron spectroscopy (XPS). Studies of metal-CeO2-silicon capacitors are also presented which help to determine the usefulness of this oxide as an alternative gate dielectric for silicon-based device applications.

Part II involves research into the fabrication of avalanche photodiodes (APD's) utilizing the 6.1 A semiconductor system. Certain alloys of Al_xGa_(1-x)Sb are shown to greatly favor hole multiplication which is beneficial for both noise characteristics and gain-bandwidth product. Further, details are presented on the current investigation into using 6.1 A superlattices to acheive even more desirable detector performance.

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Hsin-HouLu et 呂鑫豪. « Fabrication of Metal-Semiconductor (MS) and Metal-Oxide-Semiconductor (MOS) Type Hydrogen Sensors Based on GaN/AlGaN Heterostructures ». Thesis, 2017. http://ndltd.ncl.edu.tw/handle/a6m6z7.

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碩士
國立成功大學
微電子工程研究所
105
In this thesis, a series of GaN/AlGaN Schottky diode based hydrogen sensors have been fabricated and studied. Pd was chosen as Schottky contacts metal to detect hydrogen gas. Hydrogen sensing behaviors of the studied devices are investigated by sensing response and response time under different gas concentrations, and we compare the gas sensing properties of devices with and without H2O2 treatment. First, Pd/HfO2/GaN/AlGaN Schottky diode-type hydrogen sensor is fabricated and studied. Using RF sputtering to deposite HfO2 between Pd and GaN. HfO2 layer can decrease steady current in air to improve gas sensing capability. So, based on GaN and high quility insulator gas sensor to provide important potential. The thermionic emission (TE) equaiton is employed to characterize the current voltage behaviors of studied M-O-S device upon introduction of hydrogen gases. The schottky barrier height extracted from the TE equation is observe to be sensitive to hydrogen gases under various concentrations. Hydrogen sensing behavoirs of the studied M-O-S device are investigated in terms of those diode paraments, sensing responses, and response times. Second, Using hydrogen peroxide to conduct oxidation reaction on the GaN/AlGaN surface. Based on the strong oxidation property, a thin GaOx layer could be formed by an appropriate immersion of H2O2 solution. The formed GaOx layer increases the Schottky barrier height, effective adsorption sites and remarkably improves the related hydrogen gas sensing capability. Third, a chemically electroless plated (EP)-Pd/GaOx/GaN/AlGaN Schottky diode-type hydrogen sensor is fabricated and studied. Using this method can improve fermi level pinning and increase surface rougheness. Therefore, the EP-based Schottky diode have excellent rectification ratio and lower reverse saturation current. Otherwise, based on EP Pd films have higher surface rougheness through AFM, and its can be beneficial to detection hydrogen. The thermionic emission (TE) equaiton is employed to characterize the current voltage behaviors of studied EP device upon introduction of hydrogen gases. The schottky barrier height extracted from the TE equation is observe to be sensitive to hydrogen gases under various concentrations. Hydrogen sensing behavoirs of the studied EP device are investigated in terms of those diode paraments, sensing responses, response times, activation enegy.

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Pu, Ying-Chih, et 蒲盈志. « Titanium Oxide Nanowire-based Heterostructures and Cd1-xZnxSe Core/Shell Quantum Dots : Interfacial Charge Carrier Dynamics and Photoelectric Conversion Applications ». Thesis, 2014. http://ndltd.ncl.edu.tw/handle/eth9x3.

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博士
國立交通大學
材料科學與工程學系所
102
Due to the difference in band structure between the constituents, semiconductor heterostructures exhibit remarkable charge separation property which is beneficial to solar fuel generation. On the other hand, the advantages of quantum dots-based light emitting diodes (QD-LEDs) include color tunability, high color saturation and high color rendering index (CRI) white lighting. The performance of both photon-to-electron and electron-to-photon conversions is closely related to the intrinsic charge carrier dynamics of the constitutes. In this dissertation, the correlation between the charge carrier dynamics and the photoelectric conversion efficiency for semiconductor heterostructures and core/shell Cd1-xZnxSe QDs was investigated. Three individual yet relevant projects were included in the dissertation: First, we demonstrated that Au-decorated NaxH2-xTi3O7 nanobelts (NaxH2-xTi3O7-Au NBs) may exhibit remarkable photocatalytic performance under visible light illumination due to the remarkable charge separation property. In order to further enhance the photocatalytic efficiency, a thin layer of Cu2O was deposited on the Au surface of the Au-decorated NaxH2-xTi3O7 NBs to form Z-scheme NaxH2-xTi3O7-Au-Cu2O nanoheterostructures. Because of the relative band alignment of the constituents, Au may mediate the carrier transfer of NaxH2-xTi3O7-Au NBs to render them enhanced photocatalytic performance. Time-resolved photoluminescence (PL) spectra were measured to quantitatively analyze the electron transfer in the Z-scheme NaxH2-xTi3O7-Au-Cu2O NBs. The carrier utilization efficiency of the samples was evaluated and the result was correlated with that of the charge carrier dynamics measurement, which may provide insightful information when using Z-scheme heterostructures in photoconversion applications. Second, we investigated the plasmonic effect of noble metal nanocrystals on the photocatalytic properties of semiconductor nanostructures. Since the surface plasmon resonance (SPR) of metal (e.g. Ag and Au) energizes the conduction electrons and excites them from the outermost bands to higher energy states, there is a great probability that these electrons can participate in chemical reactions. We developed a Ag-decorated SiO2 NSs, which exhibited significantly red-shifted and relatively broad SPR absorption spanned from visible to near-infrared region. The photocatalytic activity of Ag-decorated SiO2 NSs was corresponded with the SPR absoption ability. On the other hand, by acting as an antenna that localizes the optical energy by SPR, plasmonic Au can sensitize TiO2 to light with energy below the band gap, generating additional charge carriers for water oxidation. The photoactivity of Au-decorated TiO2 electrodes for photoelectrochemical water oxidation can be effectively enhanced in the entire UV-visible region from 300 nm to 800 nm, by manipulating the shape of the decorated Au nanostructures. The analysis results suggested that the enhanced photoactivity of Au NP-decorated TiO2 nanowires in UV region was attributed to effective surface passivation. Since the existence of surface states greatly affected the photoconversion performance of TiO2, we employed a facile precursor-treatment approach for effective surface passivation of rutile TiO2 nanowire photoanode to improve its performance in photoelectrochemical water oxidation. Last, we developed a single-step hot-injection process to synthesize core/shell Cd1-xZnxSe QDs with tunable emission wavelengths. Because of the higher reactivity of the Cd precursor, QDs whose composition was rich in CdSe were generated at the beginning of reaction. As the reaction proceeded, the later-formed ZnSe shell was simultaneously alloyed with the core, giving rise to a progressive alloying treatment for the grown QDs. During the reaction period, the continued blue shifiting emissioned Cd1-xZnxSe QDs were obtained. A LED composed of conducting polymer with Cd1-xZnxSe QDs was fabricated to test the electroluminescence properties, which show high color purity for the emissions from LED. The findings from this work also demonstrate the advantage of using the current single-step synthetic approach to obtain a batch of Cd1-xZnxSe QDs that may emit different colors in prototype LEDs.

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Livres sur le sujet "Oxide-based heterostructures"

Park, Se Young. Electronic and optical properties of titanate-based oxide heterostructures. [New York, N.Y.?] : [publisher not identified], 2014.

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Kumar, Naveen, Ghenadii Korotcenkov et Bernabe Mari Soucase. Metal Oxide-Based Heterostructures : Fabrication and Applications. Elsevier, 2022.

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Kumar, Naveen, Ghenadii Korotcenkov et Bernabe Mari Soucase. Metal Oxide-Based Heterostructures : Fabrication and Applications. Elsevier, 2022.

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Chapitres de livres sur le sujet "Oxide-based heterostructures"

Perniu, Dana, Cristina Bogatu, Silvioara Gheorghita, Maria Covei et Anca Duta. « Thin Films Based on ZnO-Graphene Oxide Heterostructures for Self-Cleaning Applications ». Dans Springer Proceedings in Energy, 435–47. Cham : Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-55757-7_30.

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Venkatesan, T., S. Bhattacharya, C. Doughty, A. Findikoglu, C. Kwon, Qi Li, S. N. Mao, A. Walkenhorst et X. X. Xi. « Pulsed Laser Deposited Metal-Oxide Based Superconductor, Semiconductor and Dielectric Heterostructures and Superlattices ». Dans Multicomponent and Multilayered Thin Films for Advanced Microtechnologies : Techniques, Fundamentals and Devices, 209–38. Dordrecht : Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1727-2_13.

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Sarveena, Navadeep Shrivastava, Naveed A. Shad, Muhammad Munir Sajid, M. Singh, Yasir Javed et S. K. Sharma. « Evaluation of Hyperthermic Properties of Magnetic Nano-Heterostructures Based on Gold-Iron Oxide and Noble Metal-Ferrite Systems ». Dans Magnetic Nanoheterostructures, 317–32. Cham : Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-39923-8_10.

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Mamatha Kumari, Murikinati, Raghava Reddy Kakarla, N. Ramesh Reddy, U. Bhargava, M. V. Shankar et S. K. Soni. « Highly Stable Metal Oxide-Based Heterostructured Photocatalysts for an Efficient Photocatalytic Hydrogen Production ». Dans Environmental Chemistry for a Sustainable World, 17–40. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-04949-2_2.

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Thakur, Subhasish, Soumen Maiti, Shreyasi Pal et Kalyan Kumar Chattopadhyay. « Geometrically Intricate Oxide-Based Heterostructure Over Flexible Platform : Morphology-Induced Catalytic Performance Enhancement Under UV Light ». Dans Advances in Communication, Devices and Networking, 21–27. Singapore : Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7901-6_3.

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Kumar, Suresh, Gourav Kumar, Bhavna Saroha et Kapil Gulati. « Metal oxide heterostructures as catalysts in organic reactions ». Dans Metal Oxide-Based Heterostructures, 417–51. Elsevier, 2023. http://dx.doi.org/10.1016/b978-0-323-85241-8.00003-7.

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Yadav, Monika, Pinki Sharma et Nar Singh Chauhan. « Metal oxide–based heterostructures for antimicrobial activity ». Dans Metal Oxide-Based Heterostructures, 535–70. Elsevier, 2023. http://dx.doi.org/10.1016/b978-0-323-85241-8.00008-6.

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Russ, Tamara, Ming Zhang, Tingting Zhou, Udo Weimar, Tong Zhang et Nicolae Barsan. « Fabrication of metal oxide heterostructures for the application in chemoresistive gas sensors ». Dans Metal Oxide-Based Heterostructures, 247–95. Elsevier, 2023. http://dx.doi.org/10.1016/b978-0-323-85241-8.00005-0.

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Bouhjar, Feriel, Lotfi Derbali, Julia Marí Guaita et Anuj Mittal. « Development of metal oxide heterostructures for hydrogen production ». Dans Metal Oxide-Based Heterostructures, 501–33. Elsevier, 2023. http://dx.doi.org/10.1016/b978-0-323-85241-8.00012-8.

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Sharma, Yashpal, Ashok K. Sharma, Naveen Kumar, Rajesh Kumar, Piyush Siroha et Jitendra Gangwar. « Polymer–metal oxide heterostructures : formation, characteristics and applications ». Dans Metal Oxide-Based Heterostructures, 141–90. Elsevier, 2023. http://dx.doi.org/10.1016/b978-0-323-85241-8.00002-5.

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Actes de conférences sur le sujet "Oxide-based heterostructures"

Grundmann, Marius. « Trigonal oxide semiconductor heterostructures ». Dans Oxide-based Materials and Devices XIII, sous la direction de Ferechteh H. Teherani et David J. Rogers. SPIE, 2022. http://dx.doi.org/10.1117/12.2617537.

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Yen, Chao-Chun, Tsun-Min Huang, Jung-Lung Chiang, Po-Wei Chen et Dong-Sing Wuu. « Interface study and preferred orientation of gallium oxide on silicon heterostructures ». Dans Oxide-based Materials and Devices XII, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2021. http://dx.doi.org/10.1117/12.2591706.

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Wagner, Markus R., Juan Sebastian Reparaz, Gordon Callsen, Felix Nippert, Thomas Kure, Axel Hoffmann, Maxime Hugues, Monique Teysseire, Benjamin Damilano et Jean-Michel Chauveau. « Phononic properties of superlattices and multi quantum well heterostructures (Conference Presentation) ». Dans Oxide-based Materials and Devices VIII, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2017. http://dx.doi.org/10.1117/12.2253653.

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Krishnamoorthy, Sriram, Arkka Bhattacharyya, Praneeth Ranga et Saurav Roy. « MOCVD-grown high-performance gallium-oxide thin films, heterostructures, and devices ». Dans Oxide-based Materials and Devices XIII, sous la direction de Ferechteh H. Teherani et David J. Rogers. SPIE, 2022. http://dx.doi.org/10.1117/12.2626507.

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Ding, Kai, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, Hadis Morkoç, Emilis Šermukšnis et Arvydas Matulionis. « Electrical properties of BeMgZnO/ZnO heterostructures with high-density two-dimensional electron gas ». Dans Oxide-based Materials and Devices X, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2019. http://dx.doi.org/10.1117/12.2511644.

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Alfaraj, Nasir A., Kuang-Hui Li, Chun Hong Kang, Laurentiu V. Braic, Tien Khee Ng et Boon S. Ooi. « Epitaxial growth of [beta]-Ga2O3/[epsilon]-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics ». Dans Oxide-based Materials and Devices XI, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2020. http://dx.doi.org/10.1117/12.2544427.

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Chauveau, Jean-Michel, Maxime Hugues, Nolwenn Le Biavan, Denis Lefebvre, Miguel Montes Bajo, Julen Tamayo-Arriola, Adrián Hierro et al. « Non-polar ZnO/(Zn,Mg)O heterostructures for intersubband devices : novel applications with an old material system ? (Conference Presentation) ». Dans Oxide-based Materials and Devices VIII, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2017. http://dx.doi.org/10.1117/12.2253708.

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Yukhnovets, O., A. I. Maximov, A. A. Semenova et S. S. Nalimova. « Photocatalytic Activity of Zinc Oxide Based Heterostructures ». Dans 2018 13th International Conference on Actual Problems of Electron Devices Engineering (APEDE). IEEE, 2018. http://dx.doi.org/10.1109/apede.2018.8542272.

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Singh, Ashutosh Kumar, et Kalyan Mandal. « High performance supercapacitor electrodes based on metal/metal-oxide core/shell nano-heterostructures ». Dans NANOFORUM 2014. AIP Publishing LLC, 2015. http://dx.doi.org/10.1063/1.4917644.

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Semenov, A. R., V. G. Litvinov, T. A. Kholomina, A. V. Ermachikhin, N. V. Rybina, D. G. Gromov et S. P. Oleinik. « Investigating and modeling high frequency C-V characteristics of zinc oxide-based heterostructures ». Dans 2018 7th Mediterranean Conference on Embedded Computing (MECO). IEEE, 2018. http://dx.doi.org/10.1109/meco.2018.8405999.

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