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Articles de revues sur le sujet « OPTOELECTRONICS APPLICATIONS »

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Auteur : Grafiati

Publié le 11 septembre 2023

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1

Soref, Richard. « Applications of Silicon-Based Optoelectronics ». MRS Bulletin 23, n^o 4 (avril 1998) : 20–24. http://dx.doi.org/10.1557/s0883769400030220.

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Silicon-based optoelectronics is a diversified technology that has grown steadily but not exponentially over the past decade. Some applications—such as smart-pixel signal processing and chip-to-chip optical interconnects—have enjoyed impressive growth, whereas other applications have remained quiescent. A few important applications such as optical diagnosis of leaky metal-oxide-semiconductor-field-effect-transistor circuits, have appeared suddenly. Over the years, research and development has unveiled some unique and significant aspects of Si-based optoelectronics. The main limitation of this technology is the lack of practical silicon light sources—Si lasers and efficient Si light-emitting devices (LEDs)—though investigators are “getting close” to the LED.Silicon-based optoelectronics refers to the integration of photonic and electronic components on a Si chip or wafer. The photonics adds value to the electronics, and the electronics offers low-cost mass-production benefits. The electronics includes complementary-metal-oxide semiconductors (CMOS), very large-scale integration (VLSI), bipolar CMOS, SiGe/Si heterojunction bipolar transistors, and heterostructure field-effect transistors. In this discussion, we will use a loose definition of optoelectronics that includes photonic and optoelectronic integrated circuits (PICs and OEICs), Si optical benches, and micro-optoelectromechanical (MOEM) platforms. Optoelectronic chips and platforms are subsystems of computer systems, communication networks, etc. Silicon substrates feature a superior native oxide, in addition to excellent thermal, mechanical, and economic properties. Silicon wafers “shine” as substrates for PICs and OEICs.

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Amariucai-Mantu, Dorina, Violeta Mangalagiu et Ionel I. Mangalagiu. « [3 + n] Cycloaddition Reactions : A Milestone Approach for Elaborating Pyridazine of Potential Interest in Medicinal Chemistry and Optoelectronics ». Molecules 26, n^o 11 (2 juin 2021) : 3359. http://dx.doi.org/10.3390/molecules26113359.

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During the last few decades, pyridazine derivatives have emerged as privileged structures in heterocyclic chemistry, both because of their excellent chemistry and because of their potential applications in medicinal chemistry and optoelectronics. This review is focused on the recent advances in [3 + n] cycloaddition reactions in the pyridazine series as well as their medicinal chemistry and optoelectronic applications over the last ten years. The stereochemistry and regiochemistry of the cycloaddition reactions are discussed. Applications in optoelectronics (in particular, as fluorescent materials and sensors) and medicinal chemistry (in particular, antimicrobials and anticancer) are also reviewed.

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Wang, Yuyin, Shiguo Han, Xitao Liu, Zhenyue Wu, Zhihua Sun, Dhananjay Dey, Yaobin Li et Junhua Luo. « Exploring a lead-free organic–inorganic semiconducting hybrid with above-room-temperature dielectric phase transition ». RSC Advances 10, n^o 30 (2020) : 17492–96. http://dx.doi.org/10.1039/c9ra09289g.

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4

Zhao, Mingyue, Yurui Hao, Chen Zhang, Rongli Zhai, Benqing Liu, Wencheng Liu, Cong Wang et al. « Advances in Two-Dimensional Materials for Optoelectronics Applications ». Crystals 12, n^o 8 (4 août 2022) : 1087. http://dx.doi.org/10.3390/cryst12081087.

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The past one and a half decades have witnessed the tremendous progress of two-dimensional (2D) crystals, including graphene, transition-metal dichalcogenides, black phosphorus, MXenes, hexagonal boron nitride, etc., in a variety of fields. The key to their success is their unique structural, electrical, mechanical and optical properties. Herein, this paper gives a comprehensive summary on the recent advances in 2D materials for optoelectronic approaches with the emphasis on the morphology and structure, optical properties, synthesis methods, as well as detailed optoelectronic applications. Additionally, the challenges and perspectives in the current development of 2D materials are also summarized and indicated. Therefore, this review can provide a reference for further explorations and innovations of 2D material-based optoelectronics devices.

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Chen, K. T. « Applications '90 : Soviet optoelectronics ». IEEE Spectrum 27, n^o 2 (février 1990) : 44–45. http://dx.doi.org/10.1109/6.45079.

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Wu, Jing, Yunshan Zhao, Minglei Sun, Minrui Zheng, Gang Zhang, Xinke Liu et Dongzhi Chi. « Enhanced photoresponse of highly air-stable palladium diselenide by thickness engineering ». Nanophotonics 9, n^o 8 (21 février 2020) : 2467–74. http://dx.doi.org/10.1515/nanoph-2019-0542.

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AbstractRecently, layered two-dimensional (2D) palladium diselenide (PdSe2), with a unique low- symmetry puckered pentagon atomic morphology, has emerged as a promising candidate for next-generation nanoelectronics and optoelectronics because of its chemical stability and extraordinary electrical properties. Moreover, PdSe2 possesses a strong thickness-dependent bandgap that varies from 0 eV for bulk to 1.3 eV for monolayer, which can further render its potential applications in optoelectronics. However, the layer-dependent optoelectronic properties of PdSe2 are still lacking up to date. Herein, we studied the optoelectronics transport characteristics of high-quality PdSe2-based photodetectors with different thicknesses. We demonstrated an enhancement of PdSe2 photodetector performance owing to the band engineering via a thickness reduction. The highest responsivity of 5.35 A/W can be achieved with an external quantum efficiency of 1250% at the wavelength of 532 nm. We attribute such high performance in photoresponsivity to the high valley convergence in the conduction band of layered PdSe2, in agreement with first-principles calculation. Our results offer new insight into the layer-dependent optoelectronic properties of PdSe2 and open new avenues in engineering next-generation 2D-based electronics and optoelectronics.

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7

Lu, Yangbin, Kang Qu, Tao Zhang, Qingquan He et Jun Pan. « Metal Halide Perovskite Nanowires : Controllable Synthesis, Mechanism, and Application in Optoelectronic Devices ». Nanomaterials 13, n^o 3 (19 janvier 2023) : 419. http://dx.doi.org/10.3390/nano13030419.

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Metal halide perovskites are promising energy materials because of their high absorption coefficients, long carrier lifetimes, strong photoluminescence, and low cost. Low-dimensional halide perovskites, especially one-dimensional (1D) halide perovskite nanowires (NWs), have become a hot research topic in optoelectronics owing to their excellent optoelectronic properties. Herein, we review the synthetic strategies and mechanisms of halide perovskite NWs in recent years, such as hot injection, vapor phase growth, selfassembly, and solvothermal synthesis. Furthermore, we summarize their applications in optoelectronics, including lasers, photodetectors, and solar cells. Finally, we propose possible perspectives for the development of halide perovskite NWs.

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Godlewski, M., E. Wolska, S. Yatsunenko, A. Opalińska, J. Fidelus, W. Łojkowski, M. Zalewska, A. Kłonkowski et D. Kuritsyn. « Doped nanoparticles for optoelectronics applications ». Low Temperature Physics 35, n^o 1 (janvier 2009) : 48–52. http://dx.doi.org/10.1063/1.3064908.

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9

Karamarković, J. « Essentials of optoelectronics with applications ». Microelectronics Journal 29, n^o 12 (décembre 1998) : 1039. http://dx.doi.org/10.1016/s0026-2692(98)00010-x.

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Li, Zimin, et Ye Tian. « Nano-Bismuth-Sulfide for Advanced Optoelectronics ». Photonics 9, n^o 11 (24 octobre 2022) : 790. http://dx.doi.org/10.3390/photonics9110790.

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Bi2S3is a semiconductor with rational band gap around near-IR and visible range, and its nanostructures (or nano-Bi2S3) have attracted great attention due to its promising performances in optoelectronic materials and devices. An increasing number of reports point to the potential of such nanostructures to support a number of optical applications, such as photodetectors, solar cells and photocatalysts. With the aim of providing a comprehensive basis for exploiting the full potential of Bi2S3 nanostructures on optoelectronics, we review the current progress in their controlled fabrication, the trends reported (from theoretical calculations and experimental observations) in their electrical properties and optical response, and their emerging applications.

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Xu, Wangqiong, Ying Lu, Weibin Lei, Fengrui Sui, Ruru Ma, Ruijuan Qi et Rong Huang. « FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector ». Micromachines 13, n^o 1 (22 décembre 2021) : 11. http://dx.doi.org/10.3390/mi13010011.

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Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 104 AW−1 and a high photoconductivity gain of 5.0 × 106%, which shows great promise for further optoelectronic device applications.

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12

Hernández, David Asael Gutiérrez, et Juan Arturo Aranda Ruiz. « Novel Optoelectronics Device for Measuring Pupillary Dynamics for Medical Applications ». International Journal of Scientific Research 2, n^o 4 (1 juin 2012) : 85–87. http://dx.doi.org/10.15373/22778179/apr2013/33.

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13

Yang, Fangxu, Shanshan Cheng, Xiaotao Zhang, Xiaochen Ren, Rongjin Li, Huanli Dong et Wenping Hu. « Organic Optoelectronics : 2D Organic Materials for Optoelectronic Applications (Adv. Mater. 2/2018) ». Advanced Materials 30, n^o 2 (janvier 2018) : 1870012. http://dx.doi.org/10.1002/adma.201870012.

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14

Soref, Richard. « The Achievements and Challenges of Silicon Photonics ». Advances in Optical Technologies 2008 (2 juillet 2008) : 1–7. http://dx.doi.org/10.1155/2008/472305.

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A brief overview of silicon photonics is given here in order to provide a context for invited and contributed papers in this special issue. Recent progress on silicon-based photonic components, photonic integrated circuits, and optoelectronic integrated circuits is surveyed. Present and potential applications are identified along with the scientific and engineering challenges that must be met in order to actualize applications. Some on-going government-sponsored projects in silicon optoelectronics are also described.

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Stepanidenko, Evgeniia A., Elena V. Ushakova, Anatoly V. Fedorov et Andrey L. Rogach. « Applications of Carbon Dots in Optoelectronics ». Nanomaterials 11, n^o 2 (1 février 2021) : 364. http://dx.doi.org/10.3390/nano11020364.

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Carbon dots (CDs) are an attractive class of nanomaterials due to the ease of their synthesis, biocompatibility, and superior optical properties. The electronic structure of CDs and hence their optical transitions can be controlled and tuned over a wide spectral range via the choice of precursors, adjustment of the synthetic conditions, and post-synthetic treatment. We summarize recent progress in the synthesis of CDs emitting in different colors in terms of morphology and optical properties of the resulting nanoparticles, with a focus on the synthetic approaches allowing to shift their emission to longer wavelengths. We further consider formation of CD-based composite materials, and review approaches used to prevent aggregation and self-quenching of their emission. We then provide examples of applications of CDs in optoelectronic devices, such as solar cells and light-emitting diodes (LEDs) with a focus on white LEDs.

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16

Butt, Faheem K. « Nanomaterials for Optoelectronics Energy Storage Applications ». Current Nanomaterials 3, n^o 1 (18 septembre 2018) : 4. http://dx.doi.org/10.2174/240546150301180720110702.

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Godlewski, Marek. « (Invited) Doped Nanoparticles for Optoelectronics Applications ». ECS Transactions 28, n^o 3 (17 décembre 2019) : 223–28. http://dx.doi.org/10.1149/1.3367229.

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18

Wang, Tairan, N. Moll, Kyeongjae Cho et J. D. Joannopoulos. « Deliberately Designed Materials for Optoelectronics Applications ». Physical Review Letters 82, n^o 16 (19 avril 1999) : 3304–7. http://dx.doi.org/10.1103/physrevlett.82.3304.

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19

Knox, W. H. « Quantum wells for femtosecond optoelectronics applications ». Applied Physics A Solids and Surfaces 53, n^o 6 (décembre 1991) : 503–13. http://dx.doi.org/10.1007/bf00331539.

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Egorov, V. A., G. É. Cirlin, A. A. Tonkikh, V. G. Talalaev, A. G. Makarov, N. N. Ledentsov, V. M. Ustinov, N. D. Zakharov et P. Werner. « Si/Ge nanostructures for optoelectronics applications ». Physics of the Solid State 46, n^o 1 (janvier 2004) : 49–55. http://dx.doi.org/10.1134/1.1641919.

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21

Popescu, Roxana, Cristian Pîrvu, Mirela Moldoveanu, James G. Grote, Francois Kajzar et Ileana Rau. « Biopolymer Thin Films for Optoelectronics Applications ». Molecular Crystals and Liquid Crystals 522, n^o 1 (25 mai 2010) : 229/[529]—237/[537]. http://dx.doi.org/10.1080/15421401003722757.

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Sureshkumar, M. S., R. K. Goyal et Y. S. Negi. « Potential Applications of Polystyrene in Optoelectronics ». Progress in Rubber, Plastics and Recycling Technology 24, n^o 1 (février 2008) : 53–71. http://dx.doi.org/10.1177/147776060802400105.

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Vyas, Sumit. « A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors ». Johnson Matthey Technology Review 64, n^o 2 (1 avril 2020) : 202–18. http://dx.doi.org/10.1595/205651320x15694993568524.

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Zinc oxide has emerged as an attractive material for various applications in electronics, optoelectronics, biomedical and sensing. The large excitonic binding energy of 60 meV at room temperature as compared to 25 meV of gallium nitride, an III-V compound makes ZnO an efficient light emitter in the ultraviolet (UV) spectral region and hence favourable for optoelectronic applications. The high conductivity and transparency of ZnO makes it important for applications like transparent conducting oxides (TCO) and thin-film transistors (TFT). In this paper, the optoelectronic, electronic and other properties that make ZnO attractive for a variety of applications are discussed. Various applications of ZnO thin film and its devices such as light-emitting diodes (LED), UV sensors, biosensors, photodetectors and TFT that have been described by various research groups are presented.

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Miao, Sijia, Tianle Liu, Yujian Du, Xinyi Zhou, Jingnan Gao, Yichu Xie, Fengyi Shen, Yihua Liu et Yuljae Cho. « 2D Material and Perovskite Heterostructure for Optoelectronic Applications ». Nanomaterials 12, n^o 12 (18 juin 2022) : 2100. http://dx.doi.org/10.3390/nano12122100.

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Optoelectronic devices are key building blocks for sustainable energy, imaging applications, and optical communications in modern society. Two-dimensional materials and perovskites have been considered promising candidates in this research area due to their fascinating material properties. Despite the significant progress achieved in the past decades, challenges still remain to further improve the performance of devices based on 2D materials or perovskites and to solve stability issues for their reliability. Recently, a novel concept of 2D material/perovskite heterostructure has demonstrated remarkable achievements by taking advantage of both materials. The diverse fabrication techniques and large families of 2D materials and perovskites open up great opportunities for structure modification, interface engineering, and composition tuning in state-of-the-art optoelectronics. In this review, we present comprehensive information on the synthesis methods, material properties of 2D materials and perovskites, and the research progress of optoelectronic devices, particularly solar cells and photodetectors which are based on 2D materials, perovskites, and 2D material/perovskite heterostructures with future perspectives.

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Zhang, Fang, Xianqi Dai, Liangliang Shang et Wei Li. « Tunable Band Alignment in the Arsenene/WS2 Heterostructure by Applying Electric Field and Strain ». Crystals 12, n^o 10 (30 septembre 2022) : 1390. http://dx.doi.org/10.3390/cryst12101390.

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Arsenene has received considerable attention because of its unique optoelectronic and nanoelectronic properties. Nevertheless, the research on van der Waals (vdW) heterojunctions based on arsenene has just begun, which hinders the application of arsenene in the optoelectronic and nanoelectronic fields. Here, we systemically predict the stability and electronic structures of the arsenene/WS2 vdW heterojunction based on first-principles calculations, considering the stacking pattern, electric field, and strain effects. We found that the arsenene/WS2 heterostructure possesses a type-II band alignment. Moreover, the electric field can effectively tune both the band gap and the band alignment type. Additionally, the band gap could be tuned effectively by strain, while the band alignment type is robust under strain. Our study opens up a new avenue for the application of ultrathin arsenene-based vdW heterostructures in future nano- and optoelectronics applications. Our study demonstrates that the arsenene/WS2 heterostructure offers a candidate material for optoelectronic and nanoelectronic devices.

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Coffa, Salvatore, et Leonid Tsybeskov. « Silicon-Based Optoelectronics ». MRS Bulletin 23, n^o 4 (avril 1998) : 16–19. http://dx.doi.org/10.1557/s0883769400030219.

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The enormous progress of communication technologies in the last years has increased the demand for efficient and low-cost optoelectronic functions. For several present and future applications, photonic materials—in which light can be generated, guided, modulated, amplified, and detected—need to be integrated with standard electronic circuits in order to combine the information-processing capabilities of electronics data transfer and the speed of light. Long-distance communications, local-area-networks data transfer, and chip-to-chip or even intrachip optical communications all require the development of efficient optical functions and their integration with state-of-the-art electronic functions. Silicon is the material of choice for reliable and low-cost optoelectronic integrated circuits because it is the leading semiconductor in the electronic arena and since a wellestablished processing technology exists for this material. However Si is characterized by an indirect bandgap and by a weak electro-optic effect. It is therefore not suitable for the implementation of fundamental optical functions such as light emission and modulation. At the moment, hybrid integration of compound-semiconductor optical functions with Si electronic functions is providing the gateway from electronic to photonic technology. However several strategies are being considered to engineer the optical functions of Si and to realize fully Si-based or at least Si-compatible optoelectronics.

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Tang, Hongyu, et Giulia Tagliabue. « Tunable photoconductive devices based on graphene/WSe₂ heterostructures ». EPJ Web of Conferences 266 (2022) : 09010. http://dx.doi.org/10.1051/epjconf/202226609010.

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Optoelectronic tunability in van der Waals heterostructures is essential for their optoelectronic applications. In this work, tunable photoconductive properties were investigated in the heterostructures of WSe2 and monolayer graphene with different stacking orders on SiO2/Si substrates. Here, we demonstrated the effect of the material thickness of WSe2 and graphene on the interfacial charge transport, light absorption, and photoresponses. The results showed that the WSe2/graphene heterostructure exhibited positive photoconductivity after photoexcitation, while negative photoconductivity was observed in the graphene/WSe2 heterostructures. The tunable photoconductive behaviors provide promising potential applications of van der Waals heterostructures in optoelectronics. This work has guiding significance for the realization of stacking engineering in van der Waals heterostructures.

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Sang, Xianhe, Yongfu Wang, Qinglin Wang, Liangrui Zou, Shunhao Ge, Yu Yao, Xueting Wang, Jianchao Fan et Dandan Sang. « A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction ». Molecules 28, n^o 3 (30 janvier 2023) : 1334. http://dx.doi.org/10.3390/molecules28031334.

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Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.

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Schöler, Michael, Maximilian W. Lederer et Peter J. Wellmann. « Deep Electronic Levels in n-Type and p-Type 3C-SiC ». Materials Science Forum 963 (juillet 2019) : 297–300. http://dx.doi.org/10.4028/www.scientific.net/msf.963.297.

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In recent times, 3C-SiC is gaining more and more interest in terms of applications for optoelectronics and quantum computing. Cubic SiC exhibits a number of luminescent defects in the near infrared originating from deep electronic levels. Temperature dependent photoluminescence measurements were conducted on n-type and p-type 3C-SiC in order to investigate the formation of dopant related point defects as well as intrinsic point defects and defect complexes. The results indicate a number of VSi, VC and VCCSi related defects which might be suitable candidates for future optoelectronic applications.

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Wang, Xiaoqian, Wanli Liu, Jiazhen He, Yuqing Li et Yong Liu. « Synthesis of All-Inorganic Halide Perovskite Nanocrystals for Potential Photoelectric Catalysis Applications ». Catalysts 13, n^o 7 (27 juin 2023) : 1041. http://dx.doi.org/10.3390/catal13071041.

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Compared with conventional semiconductors, halide perovskite nanocrystals (NCs) have a unique crystal structure and outstanding optoelectronic properties, offering wide potential for applications in optoelectronic devices such as solar cells, photodetectors, light-emitting diodes, lasers, and displays. Rational technological design is providing vital support for the development of perovskite optoelectronics. Herein, monodisperse all-inorganic halide perovskite nanocrystals with consistent morphology and cubic crystal phase were synthesized employing a modified one-pot hot injection method to independently modulate the stoichiometric ratios of three precursors involving cesium salt, lead source, and halide. In combination with an anion exchange reaction, mixing two kinds of perovskite NCs with different halogens enables a transition from violet emission to green and finally to red emission over the entire visible region. Additionally, optical and electrochemical tests suggested that the as-synthesized halide perovskite NCs are promising for photoelectric catalysis applications.

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Jiao, Hanxue, Xudong Wang, Shuaiqin Wu, Yan Chen, Junhao Chu et Jianlu Wang. « Ferroelectric field effect transistors for electronics and optoelectronics ». Applied Physics Reviews 10, n^o 1 (mars 2023) : 011310. http://dx.doi.org/10.1063/5.0090120.

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Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect transistor (FeFET) is a field effect transistor (FET) with ferroelectric polarization field introduced to regulate carriers in semiconductors. With the coupling of ferroelectric and semiconductor, FeFETs are attractive for advanced electronic and optoelectronic applications, including emerging memories, artificial neural networks, high-performance photodetectors, and smart sensors. In this review, representative research results of FeFETs are reviewed from the perspective of structures and applications. Here, the background and significance of ferroelectrics and FeFETs are given. Furthermore, methods of building FeFETs in different structures and physical models describing the characteristics of FeFET are introduced. Important applications of FeFETs in electronics and optoelectronics are presented, with a comparison of performance between FeFETs and FETs without ferroelectrics, including memories and memristive devices, photodetectors, negative capacitance FETs, sensors, and multifunctional devices. Finally, based on the above discussions, promising applications and challenges of FeFETs are summarized.

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Giri, Lopamudra, Smruti Rekha Rout, Rajender S. Varma, Michal Otyepka, Kolleboyina Jayaramulu et Rambabu Dandela. « Recent advancements in metal–organic frameworks integrating quantum dots (QDs@MOF) and their potential applications ». Nanotechnology Reviews 11, n^o 1 (1 janvier 2022) : 1947–76. http://dx.doi.org/10.1515/ntrev-2022-0118.

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Abstract Design and development of new materials and their hybrids are key to addressing current energy issues. Thanks to their tunable textural and physiochemical properties, metal–organic frameworks (MOFs) show great potential toward gas sorption, catalysis, sensing, and electrochemical energy applications. Nevertheless, practical applications of MOFs have been hampered because of their limited electrical conductivity, micropore size, and poor stability. However, smart integration of zero-dimensional quantum dots (QDs) into an MOF template, where the host structure offers suitable interactions for enhancing the stability and synergic properties, may be a solution. The objective of this review is to summarize recent advances in the field of QD@MOFs, highlighting fresh approaches to synthesis strategies and progress made in their application to optoelectronic devices, sensing, biomedical, catalysis, and energy storage. The current challenges and future directions of QDs@MOFs hybrids toward advancing energy and environmental applications are also addressed. We anticipate that this review will inspire researchers to develop novel MOF hybrids for energy, optoelectronics, and biomedical applications.

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Shi, Yuyang, Haipeng Song, Nan Li, Xiang Wu, Kai Wang, Ye Wu, Gonglan Ye et Haijun Huang. « High-pressure structural stability and bandgap engineering of layered tin disulfide ». Applied Physics Letters 121, n^o 11 (12 septembre 2022) : 114101. http://dx.doi.org/10.1063/5.0107303.

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Two-dimensional layered metal dichalcogenides have attracted extensive attention because of their diverse physical properties and potential applications in electronics and optoelectronics. As an eco-friendly and earth abundant semiconductor, SnS2 displays limited optoelectronic applications due to its large and indirect bandgap. Pressure is a powerful tool to tune crystal structures and physical properties of materials. Here, we systematically investigate the structural stability and optical properties of 4H-SnS2 under high pressure. The crystal structure of 4H-SnS2 is stable up to 56 GPa without structural transition and layer sliding. Continuous lattice contraction is accompanied by gradual bandgap narrowing, which is reversible after releasing pressure. The continuous and reversible modulation of the crystal structure and bandgap on 4H-SnS2 suggest promising optoelectronic applications in the range of visible light based on two-dimensional layered metal dichalcogenides.

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Tomlinson, W. J., et C. A. Brackett. « Telecommunications applications of integrated optics and optoelectronics ». Proceedings of the IEEE 75, n^o 11 (1987) : 1512–23. http://dx.doi.org/10.1109/proc.1987.13912.

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Luo, Yi, Dennis G. Deppe et Chennupati Jagadish. « Guest Editorial on Nano-Optoelectronics and Applications ». Journal of Lightwave Technology 26, n^o 11 (juin 2008) : 1365–66. http://dx.doi.org/10.1109/jlt.2008.923651.

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Iovine, Renato, Luigi La Spada et Lucio Vegni. « Nanoparticle device for biomedical and optoelectronics applications ». COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 32, n^o 5 (9 septembre 2013) : 1596–608. http://dx.doi.org/10.1108/compel-03-2013-0105.

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Charas, Ana, Helena Alves, José M. G. Martinho, Luís Alcácer, Oliver Fenwick, Franco Cacialli et Jorge Morgado. « Photoacid cross-linkable polyfluorenes for optoelectronics applications ». Synthetic Metals 158, n^o 16 (septembre 2008) : 643–53. http://dx.doi.org/10.1016/j.synthmet.2008.02.016.

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Upadhyaya, Kishor, Narasimha Ayachit et S. M. Shivaprasad. « Ag/GaN hybrid nanostructures for optoelectronics applications ». Journal of Physics : Conference Series 1495 (mars 2020) : 012029. http://dx.doi.org/10.1088/1742-6596/1495/1/012029.

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Wei, Di, et Gehan Amaratunga. « Photoelectrochemical Cell and Its Applications in Optoelectronics ». International Journal of Electrochemical Science 2, n^o 12 (décembre 2007) : 897–912. http://dx.doi.org/10.1016/s1452-3981(23)17121-5.

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Xiao, Jun, Mervin Zhao, Yuan Wang et Xiang Zhang. « Excitons in atomically thin 2D semiconductors and their applications ». Nanophotonics 6, n^o 6 (22 juin 2017) : 1309–28. http://dx.doi.org/10.1515/nanoph-2016-0160.

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AbstractThe research on emerging layered two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), reveals unique optical properties generating significant interest. Experimentally, these materials were observed to host extremely strong light-matter interactions as a result of the enhanced excitonic effect in two dimensions. Thus, understanding and manipulating the excitons are crucial to unlocking the potential of 2D materials for future photonic and optoelectronic devices. In this review, we unravel the physical origin of the strong excitonic effect and unique optical selection rules in 2D semiconductors. In addition, control of these excitons by optical, electrical, as well as mechanical means is examined. Finally, the resultant devices such as excitonic light emitting diodes, lasers, optical modulators, and coupling in an optical cavity are overviewed, demonstrating how excitons can shape future 2D optoelectronics.

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Yu, Shilong, Pinyi Wang, Huihui Ye, Hailun Tang, Siyuan Wang, Zhikang Wu, Chengjie Pei, Junhui Lu et Hai Li. « Transition Metal Dichalcogenides Nanoscrolls : Preparation and Applications ». Nanomaterials 13, n^o 17 (27 août 2023) : 2433. http://dx.doi.org/10.3390/nano13172433.

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Two-dimensional (2D) transition metal dichalcogenides (TMDCs) nanosheets have shown extensive applications due to their excellent physical and chemical properties. However, the low light absorption efficiency limits their application in optoelectronics. By rolling up 2D TMDCs nanosheets, the one-dimensional (1D) TMDCs nanoscrolls are formed with spiral tubular structure, tunable interlayer spacing, and opening ends. Due to the increased thickness of the scroll structure, the light absorption is enhanced. Meanwhile, the rapid electron transportation is confined along the 1D structure. Therefore, the TMDCs nanoscrolls show improved optoelectronic performance compared to 2D nanosheets. In addition, the high specific surface area and active edge site from the bending strain of the basal plane make them promising materials for catalytic reaction. Thus, the TMDCs nanoscrolls have attracted intensive attention in recent years. In this review, the structure of TMDCs nanoscrolls is first demonstrated and followed by various preparation methods of the TMDCs nanoscrolls. Afterwards, the applications of TMDCs nanoscrolls in the fields of photodetection, hydrogen evolution reaction, and gas sensing are discussed.

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Liu, Xiaoyan, Yijie Wang, Yu Wang, Yize Zhao, Jinghao Yu, Xinyi Shan, Yi Tong et al. « Recent advances in perovskites-based optoelectronics ». Nanotechnology Reviews 11, n^o 1 (1 janvier 2022) : 3063–94. http://dx.doi.org/10.1515/ntrev-2022-0494.

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Abstract The development and utilization of perovskites are beneficial to improve or even change the optical properties of devices and obtain fascinating performances such as higher photoelectric conversion efficiency, better thermal stability, higher external quantum efficiency, more excellent remodeling, and flexibility. So, there are many articles on perovskite reviews having been reported from synthesis, properties to various applications (such as optoelectronic devices, electrical memristor, etc.). Based on the reported review of perovskites, this study will make a further supplement to the research progress of perovskites in visible light communication (VLC), optical neuromorphic devices, and highlight huge development prospects in these emerging fields in recent years. First, we briefly reviewed the preparation methods of common perovskite materials, followed by the optical and electrical characteristics. Then, the specific applications of optical properties based on perovskite materials are emphatically investigated, in addition to traditional photovoltaic devices, especially the latest cutting-edge fields of information encryption and decryption, VLC as well as optical memristive devices for photonic synapse and photonic neuromorphic computing. Finally, the main conclusions and prospects are given. Perovskite-based optical memristive devices are enabled to assist photonic neuromorphic calculations, showing huge potential application prospects in intelligent integrated chip fusing sensing, storage, and computing.

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Kim, Suk Hyun, Kyeong Ho Park, Young Gie Lee, Seong Jun Kang, Yongsup Park et Young Duck Kim. « Color Centers in Hexagonal Boron Nitride ». Nanomaterials 13, n^o 16 (15 août 2023) : 2344. http://dx.doi.org/10.3390/nano13162344.

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Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultraviolet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.

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Wang, Mengzhu, Yingying Xiao, Ye Li, Lu Han, Zhicheng Sun, Liang He, Ruping Liu et Kuan Hu. « Recent Progress on Graphene Flexible Photodetectors ». Materials 15, n^o 14 (11 juillet 2022) : 4820. http://dx.doi.org/10.3390/ma15144820.

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In recent years, optoelectronics and related industries have developed rapidly. As typical optoelectronics devices, photodetectors (PDs) are widely applied in various fields. The functional materials in traditional PDs exhibit high hardness, and the performance of these rigid detectors is thus greatly reduced upon their stretching or bending. Therefore, the development of new flexible PDs with bendable and foldable functions is of great significance and has much interest in wearable, implantable optoelectronic devices. Graphene with excellent electrical and optical performance constructed on various flexible and rigid substrates has great potential in PDs. In this review, recent research progress on graphene-based flexible PDs is outlined. The research states of graphene conductive films are summarized, focusing on PDs based on single-component graphene and mixed-structure graphene, with a systematic analysis of their optical and mechanical performance, and the techniques for optimizing the PDs are also discussed. Finally, a summary of the current applications of graphene flexible PDs and perspectives is provided, and the remaining challenges are discussed.

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Li, Jie, Zilong Zhang, Jun Yi, Lili Miao, Jing Huang, Jinrui Zhang, Yuan He et al. « Broadband spatial self-phase modulation and ultrafast response of MXene Ti3C2Tx (T=O, OH or F) ». Nanophotonics 9, n^o 8 (21 février 2020) : 2415–24. http://dx.doi.org/10.1515/nanoph-2019-0469.

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AbstractTwo-dimensional layered materials (2DLM) have become the subject of intensive research in various applications such as electronics, photonics and optoelectronics due to their unique physical properties. As a new class of 2DLM, MXenes have attracted great interest due to their superior performance in a wide variety of applications such as batteries, supercapacitors, catalysts, electronics and optics. Here, we have investigated the broadband spatial self-phase modulation (SSPM) and ultrafast response of the MXene Ti3C2Tx (T=O, OH or F) experimentally. The MXene Ti3C2Tx exhibited the broadband nonlinear optical response via SSPM from 400 nm to ~1 μm under the ultrafast laser excitation, and ultrafast carrier characteristics with an ultrafast recovery time with femtosecond transient absorption spectroscopy. The experimental results have shown that the MXenes have the broadband nonlinear optical response, which can lay a foundation for the application prospect for the MXene-based ultrafast optoelectronic devices.

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Ma, Siyu, Jing Zhang et Limin An. « Preparation and fluorescence properties of SiO₂-coated CsPbBrI₂ perovskite nanocrystals ». Journal of Physics : Conference Series 2578, n^o 1 (1 août 2023) : 012014. http://dx.doi.org/10.1088/1742-6596/2578/1/012014.

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Abstract All-inorganic perovskite nanocrystals CsPbX3 (X=Cl, Br, I) have garnered significant interest due to their promising applications and have become a leading research subject in the field of optoelectronics. The weak stability of CsPbBrI2 perovskite nanocrystals has hindered their development, however, silica coating can effectively solve this problem. The (3-aminopropyl) triethoxysilane was used as a raw material for silica synthesis to form core-shell structured CsPbBrI2@SiO2 perovskite nanocrystals to obtain enhanced optoelectronic properties. This article reveals the narrow absorption and emission peaks, small half-height widths, 14.6 ns fluorescence lifetimes, and 106.2 meV exciton binding energies of CsPbBrI2@SiO2 perovskite nanocrystals. The results show that the core-shell structured CsPbBrI2@SiO2 perovskite nanocrystals prepared by this method have excellent fluorescence spectral properties and hold significant promise for future applications in optoelectronic devices.

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Liu, Kai, Lifei Zheng, Chao Ma, Robert Göstl et Andreas Herrmann. « DNA–surfactant complexes : self-assembly properties and applications ». Chemical Society Reviews 46, n^o 16 (2017) : 5147–72. http://dx.doi.org/10.1039/c7cs00165g.

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Soref, Richard. « Reconfigurable Integrated Optoelectronics ». Advances in OptoElectronics 2011 (4 mai 2011) : 1–15. http://dx.doi.org/10.1155/2011/627802.

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Integrated optics today is based upon chips of Si and InP. The future of this chip industry is probably contained in the thrust towards optoelectronic integrated circuits (OEICs) and photonic integrated circuits (PICs) manufactured in a high-volume foundry. We believe that reconfigurable OEICs and PICs, known as ROEICs and RPICs, constitute the ultimate embodiment of integrated photonics. This paper shows that any ROEIC-on-a-chip can be decomposed into photonic modules, some of them fixed and some of them changeable in function. Reconfiguration is provided by electrical control signals to the electro-optical building blocks. We illustrate these modules in detail and discuss 3D ROEIC chips for the highest-performance signal processing. We present examples of our module theory for RPIC optical lattice filters already constructed, and we propose new ROEICs for directed optical logic, large-scale matrix switching, and 2D beamsteering of a phased-array microwave antenna. In general, large-scale-integrated ROEICs will enable significant applications in computing, quantum computing, communications, learning, imaging, telepresence, sensing, RF/microwave photonics, information storage, cryptography, and data mining.

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Hogan, B. T., E. Kovalska, M. F. Craciun et A. Baldycheva. « 2D material liquid crystals for optoelectronics and photonics ». Journal of Materials Chemistry C 5, n^o 43 (2017) : 11185–95. http://dx.doi.org/10.1039/c7tc02549a.

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The merging of the materials science paradigms of liquid crystals and 2D materials promises superb new opportunities for the advancement of the fields of optoelectronics and photonics. In this review, we summarise the development and applications of 2D material liquid crystals for optoelectronics and photonics.

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Li, Yuyu, Khwanchai Tantiwanichapan, Anna K. Swan et Roberto Paiella. « Graphene plasmonic devices for terahertz optoelectronics ». Nanophotonics 9, n^o 7 (14 mai 2020) : 1901–20. http://dx.doi.org/10.1515/nanoph-2020-0211.

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AbstractPlasmonic excitations, consisting of collective oscillations of the electron gas in a conductive film or nanostructure coupled to electromagnetic fields, play a prominent role in photonics and optoelectronics. While traditional plasmonic systems are based on noble metals, recent work has established graphene as a uniquely suited materials platform for plasmonic science and applications due to several distinctive properties. Graphene plasmonic oscillations exhibit particularly strong sub-wavelength confinement, can be tuned dynamically through the application of a gate voltage, and span a portion of the infrared spectrum (including mid-infrared and terahertz (THz) wavelengths) that is not directly accessible with noble metals. These properties have been studied in extensive theoretical and experimental work over the past decade, and more recently various device applications are also beginning to be explored. This review article is focused on graphene plasmonic nanostructures designed to address a key outstanding challenge of modern-day optoelectronics – the limited availability of practical, high-performance THz devices. Graphene plasmons can be used as a means to enhance light–matter interactions at THz wavelengths in a highly tunable fashion, particularly through the integration of graphene resonant structures with additional nanophotonic elements. This capability is ideally suited to the development of THz optical modulators (where absorption is switched on and off by tuning the plasmonic resonance) and photodetectors (relying on plasmon-enhanced intraband absorption or rectification of charge-density waves), and promising devices based on these principles have already been reported. Novel radiation mechanisms, including light emission from electrically excited graphene plasmons, are also being explored for the development of compact narrowband THz sources.

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