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Articles de revues sur le sujet « Optoelectronic transistors »

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Auteur : Grafiati
Publié le 14 mars 2023

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1

Soldano, Caterina. « Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs) ». Materials 14, no 13 (5 juillet 2021) : 3756. http://dx.doi.org/10.3390/ma14133756.

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Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate on how this layer can be exploited and engineered as an active tool for light manipulation in this novel class of optoelectronic devices.
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Soref, Richard. « Applications of Silicon-Based Optoelectronics ». MRS Bulletin 23, no 4 (avril 1998) : 20–24. http://dx.doi.org/10.1557/s0883769400030220.

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Silicon-based optoelectronics is a diversified technology that has grown steadily but not exponentially over the past decade. Some applications—such as smart-pixel signal processing and chip-to-chip optical interconnects—have enjoyed impressive growth, whereas other applications have remained quiescent. A few important applications such as optical diagnosis of leaky metal-oxide-semiconductor-field-effect-transistor circuits, have appeared suddenly. Over the years, research and development has unveiled some unique and significant aspects of Si-based optoelectronics. The main limitation of this technology is the lack of practical silicon light sources—Si lasers and efficient Si light-emitting devices (LEDs)—though investigators are “getting close” to the LED.Silicon-based optoelectronics refers to the integration of photonic and electronic components on a Si chip or wafer. The photonics adds value to the electronics, and the electronics offers low-cost mass-production benefits. The electronics includes complementary-metal-oxide semiconductors (CMOS), very large-scale integration (VLSI), bipolar CMOS, SiGe/Si heterojunction bipolar transistors, and heterostructure field-effect transistors. In this discussion, we will use a loose definition of optoelectronics that includes photonic and optoelectronic integrated circuits (PICs and OEICs), Si optical benches, and micro-optoelectromechanical (MOEM) platforms. Optoelectronic chips and platforms are subsystems of computer systems, communication networks, etc. Silicon substrates feature a superior native oxide, in addition to excellent thermal, mechanical, and economic properties. Silicon wafers “shine” as substrates for PICs and OEICs.
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3

Pan, James N. « Chromatic and Panchromatic Nonlinear Optoelectronic CMOSFETs for CMOS Image Sensors, Laser Multiplexing, Computing, and Communication ». MRS Advances 5, no 37-38 (2020) : 1965–74. http://dx.doi.org/10.1557/adv.2020.273.

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AbstractTraditionally, CMOS transistors are for low power, high speed, and high packing density applications. CMOS is also commonly used as power regulating devices, and light sensors (CCD or CMOS image sensors). In this paper, we would like to introduce Photonic CMOS as a light emitting device for optical computing, ASIC, power transistors, and ultra large scale integration (ULSI). A Photonic CMOS Field Effect Transistor is fabricated with a low-resistance laser or LED in the drain region, and multiple photon sensors in the channel / well regions. The MOSFET, laser, and photon sensors are fabricated as one integral transistor. With embedded nonlinear optical films, the Photonic CMOSFETs have the capability of detecting and generating focused laser beams of various frequencies to perform optical computing, signal modulation, polarization, and multiplexing for digital / analog processing and communication.
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4

Huseynova, Gunel, et Vladislav Kostianovskii. « Doped organic field-effect transistors ». Material Science & ; Engineering International Journal 2, no 6 (5 décembre 2018) : 212–15. http://dx.doi.org/10.15406/mseij.2018.02.00059.

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Organic semiconductors and electronic devices based on these materials continue attracting great interest due to their excellent and unique optoelectronic properties as well as the advantageous possibilities of realizing flexible, light-weight, low-cost, and transparent optoelectronic devices fabricated on ultra-thin and solution-processible active layers. However, their poor electronic performance and unstable operation under ambient conditions limit their application in consumer electronics. This paper presents a brief introduction to doping of organic semiconductors and organic field-effect transistors. The description of the issues regarding charge carrier transport and other optoelectronic properties of organic semiconductors is also provided. The doping agents and methods commonly applied for organic semiconductors along with their fundamental mechanisms are introduced.
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Zhang, Junyao, Yang Lu, Shilei Dai, Ruizhi Wang, Dandan Hao, Shiqi Zhang, Lize Xiong et Jia Huang. « Retina-Inspired Organic Heterojunction-Based Optoelectronic Synapses for Artificial Visual Systems ». Research 2021 (22 février 2021) : 1–10. http://dx.doi.org/10.34133/2021/7131895.

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For the realization of retina-inspired neuromorphic visual systems which simulate basic functions of human visual systems, optoelectronic synapses capable of combining perceiving, processing, and memorizing in a single device have attracted immense interests. Here, optoelectronic synaptic transistors based on tris(2-phenylpyridine) iridium (Ir(ppy)3) and poly(3,3-didodecylquarterthiophene) (PQT-12) heterojunction structure are presented. The organic heterojunction serves as a basis for distinctive synaptic characteristics under different wavelengths of light. Furthermore, synaptic transistor arrays are fabricated to demonstrate their optical perception efficiency and color recognition capability under multiple illuminating conditions. The wavelength-tunability of synaptic behaviors further enables the mimicry of mood-modulated visual learning and memorizing processes of humans. More significantly, the computational dynamics of neurons of synaptic outputs including associated learning and optical logic functions can be successfully demonstrated on the presented devices. This work may locate the stage for future studies on optoelectronic synaptic devices toward the implementation of artificial visual systems.
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6

Gao, Haikuo, Jinyu Liu, Zhengsheng Qin, Tianyu Wang, Can Gao, Huanli Dong et Wenping Hu. « High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors ». Nanoscale 12, no 35 (2020) : 18371–78. http://dx.doi.org/10.1039/d0nr03569f.

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7

Vyas, Sumit. « A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors ». Johnson Matthey Technology Review 64, no 2 (1 avril 2020) : 202–18. http://dx.doi.org/10.1595/205651320x15694993568524.

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Zinc oxide has emerged as an attractive material for various applications in electronics, optoelectronics, biomedical and sensing. The large excitonic binding energy of 60 meV at room temperature as compared to 25 meV of gallium nitride, an III-V compound makes ZnO an efficient light emitter in the ultraviolet (UV) spectral region and hence favourable for optoelectronic applications. The high conductivity and transparency of ZnO makes it important for applications like transparent conducting oxides (TCO) and thin-film transistors (TFT). In this paper, the optoelectronic, electronic and other properties that make ZnO attractive for a variety of applications are discussed. Various applications of ZnO thin film and its devices such as light-emitting diodes (LED), UV sensors, biosensors, photodetectors and TFT that have been described by various research groups are presented.
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8

Wu, Jieyun, Qing Li, Wen Wang et Kaixin Chen. « Optoelectronic Properties and Structural Modification of Conjugated Polymers Based on Benzodithiophene Groups ». Mini-Reviews in Organic Chemistry 16, no 3 (25 janvier 2019) : 253–60. http://dx.doi.org/10.2174/1570193x15666180406144851.

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Organic conjugated materials have shown attractive applications due to their good optoelectronic properties, which enable them solution processing techniques in organic optoelectronic devices. Many conjugated materials have been investigated in polymer solar cells and organic field-effect transistors. Among those conjugated materials, Benzo[1,2-b:4,5-b′]dithiophene (BDT) is one of the most employed fused-ring building groups for the synthesis of conjugated materials. The symmetric and planar conjugated structure, tight and regular stacking of BDT can be expected to exhibit the excellent carrier transfer for optoelectronics. In this review, we summarize the recent progress of BDT-based conjugated polymers in optoelectronic devices. BDT-based conjugated materials are classified into onedimensional (1D) and two-dimensional (2D) BDT-based conjugated polymers. Firstly, we introduce the fundamental information of BDT-based conjugated materials and their application in optoelectronic devices. Secondly, the design and synthesis of alkyl, alkoxy and aryl-substituted BDT-based conjugated polymers are discussed, which enables the construction of one-dimensional and two-dimensional BDTbased conjugated system. In the third part, the structure modification, energy level tuning and morphology control and their influences on optoelectronic properties are discussed in detail to reveal the structure- property relationship. Overall, we hope this review can be a good reference for the molecular design of BDT-based semiconductor materials in optoelectronic devices.
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9

Urey, Z., D. Wake, D. J. Newson et I. D. Henning. « Comparison of InGaAs transistors as optoelectronic mixers ». Electronics Letters 29, no 20 (1993) : 1796. http://dx.doi.org/10.1049/el:19931195.

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10

Hong, Tu, Bhim Chamlagain, Wenzhi Lin, Hsun-Jen Chuang, Minghu Pan, Zhixian Zhou et Ya-Qiong Xu. « Polarized photocurrent response in black phosphorus field-effect transistors ». Nanoscale 6, no 15 (2014) : 8978–83. http://dx.doi.org/10.1039/c4nr02164a.

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11

Cheng, Jinbing, Junbao He, Chunying Pu, Congbin Liu, Xiaoyu Huang, Deyang Zhang, Hailong Yan et Paul K. Chu. « MoS2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness ». Energies 15, no 17 (25 août 2022) : 6169. http://dx.doi.org/10.3390/en15176169.

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Molybdenum disulfide (MoS2) has attracted great attention from researchers because of its large band gap, good mechanical toughness and stable physical properties; it has become the ideal material for the next-generation optoelectronic devices. However, the large Schottky barrier height (ΦB) and contact resistance are obstacles hampering the fabrication of high-power MoS2 transistors. The electronic transport characteristics of MoS2 transistors with two different contact structures are investigated in detail, including a copper (Cu) metal–MoS2 channel and copper (Cu) metal–TiO2-MoS2 channel. Contact optimization is conducted by adjusting the thickness of the TiO2 interlayer between the metal and MoS2. The metal-interlayer-semiconductor (MIS) structure with a 1.5 nm thick TiO2 layer has a smaller Schottky barrier of 22 meV. The results provide insights into the engineering of MIS contacts and interfaces to improve transistor characteristics.
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12

Nie, Yiling, Pengshan Xie, Xu Chen, Chenxing Jin, Wanrong Liu, Xiaofang Shi, Yunchao Xu et al. « Hybrid C8-BTBT/InGaAs nanowire heterojunction for artificial photosynaptic transistors ». Journal of Semiconductors 43, no 11 (1 novembre 2022) : 112201. http://dx.doi.org/10.1088/1674-4926/43/11/112201.

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Abstract The emergence of light-tunable synaptic transistors provides opportunities to break through the von Neumann bottleneck and enable neuromorphic computing. Herein, a multifunctional synaptic transistor is constructed by using 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and indium gallium arsenide (InGaAs) nanowires (NWs) hybrid heterojunction thin film as the active layer. Under illumination, the Type-I C8-BTBT/InGaAs NWs heterojunction would make the dissociated photogenerated excitons more difficult to recombine. The persistent photoconductivity caused by charge trapping can then be used to mimic photosynaptic behaviors, including excitatory postsynaptic current, long/short-term memory and Pavlovian learning. Furthermore, a high classification accuracy of 89.72% can be achieved through the single-layer-perceptron hardware-based neural network built from C8-BTBT/InGaAs NWs synaptic transistors. Thus, this work could provide new insights into the fabrication of high-performance optoelectronic synaptic devices.
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13

Thompson, Avery. « Applying ferroelectric materials in transistors for electronic and optoelectronic applications ». Scilight 2023, no 8 (24 février 2023) : 081106. http://dx.doi.org/10.1063/10.0017443.

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14

Yuvaraja, Saravanan, Ali Nawaz, Qian Liu, Deepak Dubal, Sandeep G. Surya, Khaled N. Salama et Prashant Sonar. « Organic field-effect transistor-based flexible sensors ». Chemical Society Reviews 49, no 11 (2020) : 3423–60. http://dx.doi.org/10.1039/c9cs00811j.

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Flexible transistors are the next generation sensing technology, due to multiparametric analysis, reduced complexity, biocompatibility, lightweight with tunable optoelectronic properties. We summarize multitude of applications realized with OFETs.
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15

Dai, Z. R., Sangbeom Kang, W. Alan Doolittle, Z. L. Wang et April S. Brown. « Interfacial Structure and Defects in GaN/AlGaN Heterojunction Epitaxially Grown on LiGa02 Substrate by Molecular Beam Epitaxy ». Microscopy and Microanalysis 6, S2 (août 2000) : 1106–7. http://dx.doi.org/10.1017/s1431927600038022.

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The performance of III-Nitride based Light Emitting Diodes (LEDs), LASERs, GaN/AlGaN MODFETs (Modulation-doped Field Effect Transistors) and HEMTs (High Electron Mobility Transistors) have been improved dramatically over the past few years [1,2], despite the relatively poor material quality of GaN, as compared to GaAs, for example. The intrinsic properties of the materials system make it extremely well suited to both optoelectronic and microwave power transistor applications. Typically, GaN is grown on substrates such as GaAs, Al2O3 (sapphire) or SiC with large lattice mismatch. This has usually resulted in an extremely high defect density in the GaN layer. The growth of GaN on lithium gallate LiGaO2 (LGO) affords many advantages compared to all other available substrates. LGO offers the smallest average lattice mismatch of any available substrate for the Ill-nitrides. This facilitates the growth of high quality GaN directly on Lithium Gallate without the need for a defective buffer to decouple the strain associated with the large lattice mismatch of other substrates [3].
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16

Jiao, Hanxue, Xudong Wang, Shuaiqin Wu, Yan Chen, Junhao Chu et Jianlu Wang. « Ferroelectric field effect transistors for electronics and optoelectronics ». Applied Physics Reviews 10, no 1 (mars 2023) : 011310. http://dx.doi.org/10.1063/5.0090120.

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Ferroelectric materials have shown great value in the modern semiconductor industry and are considered important function materials due to their high dielectric constant and tunable spontaneous polarization. A ferroelectric field effect transistor (FeFET) is a field effect transistor (FET) with ferroelectric polarization field introduced to regulate carriers in semiconductors. With the coupling of ferroelectric and semiconductor, FeFETs are attractive for advanced electronic and optoelectronic applications, including emerging memories, artificial neural networks, high-performance photodetectors, and smart sensors. In this review, representative research results of FeFETs are reviewed from the perspective of structures and applications. Here, the background and significance of ferroelectrics and FeFETs are given. Furthermore, methods of building FeFETs in different structures and physical models describing the characteristics of FeFET are introduced. Important applications of FeFETs in electronics and optoelectronics are presented, with a comparison of performance between FeFETs and FETs without ferroelectrics, including memories and memristive devices, photodetectors, negative capacitance FETs, sensors, and multifunctional devices. Finally, based on the above discussions, promising applications and challenges of FeFETs are summarized.
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17

Chen, Yusheng, Yifan Yao, Nicholas Turetta et Paolo Samorì. « Vertical organic transistors with short channels for multifunctional optoelectronic devices ». Journal of Materials Chemistry C 10, no 7 (2022) : 2494–506. http://dx.doi.org/10.1039/d1tc05055a.

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18

LEE, YOUNGBIN, et JONG-HYUN AHN. « GRAPHENE-BASED TRANSPARENT CONDUCTIVE FILMS ». Nano 08, no 03 (30 mai 2013) : 1330001. http://dx.doi.org/10.1142/s1793292013300016.

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Graphene is a promising alternative to indium tin oxide for use in transparent conducting electrodes. We review recent progress in production methods of graphene and its applications in optoelectronic devices such as touch panel screens, organic photovoltaic cells, organic light emitting diodes and thin film transistors. In addition, we discuss important criteria such as optical transmittance, electrical conductivity and work function, which are critical considerations in the integration of graphene conductive films with optoelectronic devices.
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19

Wang, Gongming, Dehui Li, Hung-Chieh Cheng, Yongjia Li, Chih-Yen Chen, Anxiang Yin, Zipeng Zhao et al. « Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics ». Science Advances 1, no 9 (octobre 2015) : e1500613. http://dx.doi.org/10.1126/sciadv.1500613.

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Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.
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20

Xie, Ling-Hai, Su-Hui Yang, Jin-Yi Lin, Ming-Dong Yi et Wei Huang. « Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics ». Philosophical Transactions of the Royal Society A : Mathematical, Physical and Engineering Sciences 371, no 2000 (13 octobre 2013) : 20120337. http://dx.doi.org/10.1098/rsta.2012.0337.

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Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.
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21

Wang, Lin, Li Huang, Wee Chong Tan, Xuewei Feng, Li Chen et Kah-Wee Ang. « Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics ». Nanoscale 10, no 29 (2018) : 14359–67. http://dx.doi.org/10.1039/c8nr03207f.

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Here, we explore the potential of naturally formed black phosphorus heterojunction for optoelectronic application. As a result, BP heterojunction transistor not only enables gate-tunable photodetection with decent performance, but also has potential for infrared photovoltaics.
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22

Dong, Mi-Mi, Guang-Ping Zhang, Zong-Liang Li, Ming-Lang Wang, Chuan-Kui Wang et Xiao-Xiao Fu. « Anisotropic interfacial properties of monolayer C2N field effect transistors ». Physical Chemistry Chemical Physics 22, no 48 (2020) : 28074–85. http://dx.doi.org/10.1039/d0cp04450d.

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23

Moram, M. A., et S. Zhang. « ScGaN and ScAlN : emerging nitride materials ». J. Mater. Chem. A 2, no 17 (2014) : 6042–50. http://dx.doi.org/10.1039/c3ta14189f.

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ScAlN and ScGaN alloys are wide band-gap semiconductors which can greatly expand the options for band gap and polarisation engineering required for efficient III-nitride optoelectronic devices, high-electron mobility transistors and energy-harvesting devices.
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Zhou, Wenhan, Shengli Zhang, Shiying Guo, Hengze Qu, Bo Cai, Xiang Chen et Haibo Zeng. « High-performance monolayer Na3Sb shrinking transistors : a DFT-NEGF study ». Nanoscale 12, no 36 (2020) : 18931–37. http://dx.doi.org/10.1039/d0nr04129g.

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Qian, Fangsheng, Xiaobo Bu, Junjie Wang, Ziyu Lv, Su-Ting Han et Ye Zhou. « Evolutionary 2D organic crystals for optoelectronic transistors and neuromorphic computing ». Neuromorphic Computing and Engineering 2, no 1 (7 février 2022) : 012001. http://dx.doi.org/10.1088/2634-4386/ac4a84.

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Abstract Brain-inspired neuromorphic computing has been extensively researched, taking advantage of increased computer power, the acquisition of massive data, and algorithm optimization. Neuromorphic computing requires mimicking synaptic plasticity and enables near-in-sensor computing. In synaptic transistors, how to elaborate and examine the link between microstructure and characteristics is a major difficulty. Due to the absence of interlayer shielding effects, defect-free interfaces, and wide spectrum responses, reducing the thickness of organic crystals to the 2D limit has a lot of application possibilities in this computing paradigm. This paper presents an update on the progress of 2D organic crystal-based transistors for data storage and neuromorphic computing. The promises and synthesis methodologies of 2D organic crystals (2D OCs) are summarized. Following that, applications of 2D OCs for ferroelectric non-volatile memory, circuit-type optoelectronic synapses, and neuromorphic computing are addressed. Finally, new insights and challenges for the field’s future prospects are presented, pushing the boundaries of neuromorphic computing even farther.
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Lee, Seunghyun, Jin-Seo Noh, Jeongmin Kim, MinGin Kim, So Young Jang, Jeunghee Park et Wooyoung Lee. « The Optoelectronic Properties of PbS Nanowire Field-Effect Transistors ». IEEE Transactions on Nanotechnology 12, no 6 (novembre 2013) : 1135–38. http://dx.doi.org/10.1109/tnano.2013.2280911.

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Yu, Hyeonggeun, Zhipeng Dong, Jing Guo, Doyoung Kim et Franky So. « Vertical Organic Field-Effect Transistors for Integrated Optoelectronic Applications ». ACS Applied Materials & ; Interfaces 8, no 16 (15 avril 2016) : 10430–35. http://dx.doi.org/10.1021/acsami.6b00182.

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Pan, James N. « Optoelectronic CMOS Transistors : Performance Advantages for Sub-7nm ULSI, RF ASIC, Memories, and Power MOSFETs ». MRS Advances 4, no 48 (2019) : 2585–91. http://dx.doi.org/10.1557/adv.2019.211.

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AbstractSubstantial increase of output current, and Ion / Ioff ratio for sub-7nm low power CMOS transistors, can be accomplished using a novel optoelectronic technology, which is 100% compatible with existing CMOS process flow. For RF or mixed signal ASICs, adding photonic components may improve the cut-off frequency, and reduce series resistance. Products that utilize power regulating devices, such as power MOSFETs, will benefit from the optoelectronic configuration to achieve much lower Rdson and high voltage at the same time. For semiconductor memories, such as DRAM or FLASH, the photonic technique may reduce the ERASE / WRITE / access time and improve the reliability.
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Urbanos, Fernando J., A. Black, Ramón Bernardo-Gavito, A. L. Vázquez de Parga, Rodolfo Miranda et D. Granados. « Electrical and geometrical tuning of MoS2 field effect transistors via direct nanopatterning ». Nanoscale 11, no 23 (2019) : 11152–58. http://dx.doi.org/10.1039/c9nr02464f.

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Zhu, Zhongcheng, Imran Murtaza, Hong Meng et Wei Huang. « Thin film transistors based on two dimensional graphene and graphene/semiconductor heterojunctions ». RSC Advances 7, no 28 (2017) : 17387–97. http://dx.doi.org/10.1039/c6ra27674a.

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Sun, Yilin, Yingtao Ding, Dan Xie, Jianlong Xu, Mengxing Sun, Pengfei Yang et Yanfeng Zhang. « Optogenetics‐Inspired Neuromorphic Optoelectronic Synaptic Transistors with Optically Modulated Plasticity ». Advanced Optical Materials 9, no 12 (27 mars 2021) : 2002232. http://dx.doi.org/10.1002/adom.202002232.

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Lee, Changmin, et Jaewon Jang. « Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors ». JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY 29, no 5 (30 septembre 2020) : 328–31. http://dx.doi.org/10.46670/jsst.2020.29.5.328.

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Yang Sheng-Yi, Du Wen-Shu, Qi Jie-Ru et Lou Zhi-Dong. « Optoelectronic characteristics of NPB-based vertical organic light-emitting transistors ». Acta Physica Sinica 58, no 5 (2009) : 3427. http://dx.doi.org/10.7498/aps.58.3427.

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Hong, Jintao, Mengchen Wang, Jie Jiang, Peng Zheng, Hui Zheng, Liang Zheng, Dexuan Huo, Zhangting Wu, Zhenhua Ni et Yang Zhang. « Optoelectronic performance of multilayer WSe2 transistors enhanced by defect engineering ». Applied Physics Express 13, no 6 (13 mai 2020) : 061004. http://dx.doi.org/10.35848/1882-0786/ab8f13.

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Yang, Shengxue, Sefaattin Tongay, Yan Li, Qu Yue, Jian-Bai Xia, Shun-Shen Li, Jingbo Li et Su-Huai Wei. « Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors ». Nanoscale 6, no 13 (2014) : 7226. http://dx.doi.org/10.1039/c4nr01741b.

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Brückner, V., et F. Kerstan. « Fast Response Time Measurements in Transistors Using Picosecond Optoelectronic Switches ». physica status solidi (a) 91, no 2 (16 octobre 1985) : K179—K183. http://dx.doi.org/10.1002/pssa.2210910266.

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Huo, Nengjie, Jun Kang, Zhongming Wei, Shu-Shen Li, Jingbo Li et Su-Huai Wei. « Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2Heterostructure Transistors ». Advanced Functional Materials 24, no 44 (5 septembre 2014) : 7025–31. http://dx.doi.org/10.1002/adfm.201401504.

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Duan, Hongxiao, Kashif Javaid, Lingyan Liang, Lu Huang, Jiahuan Yu, Hongliang Zhang, Junhua Gao, Fei Zhuge, Ting-Chang Chang et Hongtao Cao. « Broadband Optoelectronic Synaptic Thin‐Film Transistors Based on Oxide Semiconductors ». physica status solidi (RRL) – Rapid Research Letters 14, no 4 (avril 2020) : 1900630. http://dx.doi.org/10.1002/pssr.201900630.

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Faella, Enver, Kimberly Intonti, Loredana Viscardi, Filippo Giubileo, Arun Kumar, Hoi Tung Lam, Konstantinos Anastasiou, Monica F. Craciun, Saverio Russo et Antonio Di Bartolomeo. « Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light ». Nanomaterials 12, no 11 (31 mai 2022) : 1886. http://dx.doi.org/10.3390/nano12111886.

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We report the fabrication and optoelectronic characterization of field-effect transistors (FETs) based on few-layer ReSe2. The devices show n-type conduction due to the Cr contacts that form low Schottky barriers with the ReSe2 nanosheet. We show that the optoelectronic performance of these FETs is strongly affected by air pressure, and it undergoes a dramatic increase in conductivity when the pressure is lowered below the atmospheric one. Surface-adsorbed oxygen and water molecules are very effective in doping ReSe2; hence, FETs based on this two-dimensional (2D) semiconductor can be used as an effective air pressure gauge. Finally, we report negative photoconductivity in the ReSe2 channel that we attribute to a back-gate-dependent trapping of the photo-excited charges.
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Zhu, Chen, Wen Huang, Wei Li, Xuegong Yu et Xing’ao Li. « Light-Emitting Artificial Synapses for Neuromorphic Computing ». Research 2022 (24 septembre 2022) : 1–6. http://dx.doi.org/10.34133/2022/9786023.

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As the key connecting points in the neuromorphic computing systems, synaptic devices have been investigated substantially in recent years. Developing optoelectronic synaptic devices with optical outputs is becoming attractive due to many benefits of optical signals in systems. Colloidal quantum dots (CQDs) are potential luminescent materials for information displays. Light-emitting diodes based on CQDs have become appealing candidates for optoelectronic synaptic devices. Moreover, light-emitting transistors exhibit great application potential in these synaptic devices. From this perspective, light-emitting artificial synapses were discussed on the basis of these structures in the devices. Their mechanisms, performance, and future development were analysed and prospected in detail.
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Oh, Hongseok. « Heteroepitaxially grown semiconductors on large-scale 2D nanomaterials for optoelectronics devices ». Ceramist 25, no 4 (31 décembre 2022) : 412–26. http://dx.doi.org/10.31613/ceramist.2022.25.4.04.

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Semiconductor nanostructures or thin films are vital components of modern optoelectronic devices, such as light-emitting diodes, sensors, or transistors. While single crystalline wafers are used as heteroepitaxial templates for them, increasing demands on flexibility or transferability require separation of the grown semiconductor structures on such substrates, which is technically challenging and expensive. Recent research suggests that large-scale 2D nanomaterials can serve as heteroepitaxial templates and provide additional functionalities such as transferability to foreign substrates or mechanical flexibility. In this paper, growth, structural properties, and optoelectronic device applications of semiconductor nanostructures or thin films which are heteroepitaxially grown on large-scale 2D nanomaterials are reviewed.
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MALIK, A., et M. ACEVES. « IMPROVED TWO-TERMINAL SILICON FUNCTIONAL OPTICAL SENSOR ». Modern Physics Letters B 15, no 17n19 (20 août 2001) : 722–25. http://dx.doi.org/10.1142/s0217984901002385.

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The modelling of two-terminal silicon-based multi-layered functional photosensor that operates at low-voltage bias is presented. The devices developed do not require external active electronic components (transistors, microminiature circuits, etc) to execute their functions. Neither to transform analogue input optical signals to digital output form that is very important for a wide range of optoelectronic applications.
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Singh, Arun Kumar, Shaista Andleeb, Jai Singh et Jonghwa Eom. « Tailoring the electrical properties of multilayer MoS2 transistors using ultraviolet light irradiation ». RSC Advances 5, no 94 (2015) : 77014–18. http://dx.doi.org/10.1039/c5ra14509k.

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Modulating the electronic properties of MoS2 is essential in order to obtain the best performance of its electronic and optoelectronic devices as well as enabling fabrication of various complex devices.
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Jang, Jiung, Yeonsu Kang, Danyoung Cha, Junyoung Bae et Sungsik Lee. « Thin-Film Optical Devices Based on Transparent Conducting Oxides : Physical Mechanisms and Applications ». Crystals 9, no 4 (3 avril 2019) : 192. http://dx.doi.org/10.3390/cryst9040192.

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This paper provides a review of optical devices based on a wide band-gap transparent conducting oxide (TCO) while discussing related physical mechanisms and potential applications. Intentionally using a light-induced metastability mechanism of oxygen defects in TCOs, it is allowed to detect even visible lights, eluding to a persistent photoconductivity (PPC) as an optical memory action. So, this PPC phenomenon is naturally useful for TCO-based optical memory applications, e.g., optical synaptic transistors, as well as photo-sensors along with an electrical controllability of a recovery speed with gate pulse or bias. Besides the role of TCO channel layer in thin-film transistor structure, a defective gate insulator can be another approach for a memory operation with assistance for gate bias and illuminations. In this respect, TCOs can be promising materials for a low-cost transparent optoelectronic application.
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Comí, Marc, Dhananjaya Patra, Rui Yang, Zhihui Chen, Alexandra Harbuzaru, Yiming Wubulikasimu, Sarbajit Banerjee, Rocío Ponce Ortiz, Yao Liu et Mohammed Al-Hashimi. « Alkoxy functionalized benzothiadiazole based donor–acceptor conjugated copolymers for organic field-effect transistors ». Journal of Materials Chemistry C 9, no 15 (2021) : 5113–23. http://dx.doi.org/10.1039/d1tc00079a.

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Liu, Hao, et Junhong Yang. « Research on Photoelectric Detection Performance Based on Pb Se Quantum Dots ». Journal of Physics : Conference Series 2290, no 1 (1 juin 2022) : 012047. http://dx.doi.org/10.1088/1742-6596/2290/1/012047.

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Abstract Quantum dot materials have the advantages of low cost, wide spectral response and good photostability, and are widely used in optoelectronic fields such as light-emitting diodes and photodetectors. Quantum dots are the key materials for the next generation of new semiconductor optoelectronic devices. The direct integration of nano-quantum dots with silicon-based materials can simplify the fabrication process of optoelectronic devices. The environmental stability of lead selenide (PbSe) quantum dots is poorer than that of lead sulfide (PbS) quantum dots, which limits its application in optoelectronic devices. In this paper, we combine lead selenide quantum dots with silicon-based photovoltaic junction field effect transistors, and introduce halides in the synthesis process to improve the stability of quantum dots in air. We analyze and study the performance of this new type of near-infrared quantum dot photodetector, and study the influence of factors such as channel area and quantum dot size on the performance of the detector, which provides ideas for further optimizing the photodetection performance.
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Peimyoo, N., M. D. Barnes, J. D. Mehew, A. De Sanctis, I. Amit, J. Escolar, K. Anastasiou et al. « Laser-writable high-k dielectric for van der Waals nanoelectronics ». Science Advances 5, no 1 (janvier 2019) : eaau0906. http://dx.doi.org/10.1126/sciadv.aau0906.

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Similar to silicon-based semiconductor devices, van der Waals heterostructures require integration with high-koxides. Here, we demonstrate a method to embed and pattern a multifunctional few-nanometer-thick high-koxide within various van der Waals devices without degrading the properties of the neighboring two-dimensional materials. This transformation allows for the creation of several fundamental nanoelectronic and optoelectronic devices, including flexible Schottky barrier field-effect transistors, dual-gated graphene transistors, and vertical light-emitting/detecting tunneling transistors. Furthermore, upon dielectric breakdown, electrically conductive filaments are formed. This filamentation process can be used to electrically contact encapsulated conductive materials. Careful control of the filamentation process also allows for reversible switching memories. This nondestructive embedding of a high-koxide within complex van der Waals heterostructures could play an important role in future flexible multifunctional van der Waals devices.
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Gou, He, Guorui Wang, Yanhong Tong, Qingxin Tang et Yichun Liu. « Electronic and optoelectronic properties of zinc phthalocyanine single-crystal nanobelt transistors ». Organic Electronics 30 (mars 2016) : 158–64. http://dx.doi.org/10.1016/j.orgel.2015.12.019.

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Wang, Q. H., et J. G. Swanson. « Optoelectronic modulation spectroscopy applied to the characterization of field effect transistors ». Journal of Applied Physics 74, no 11 (décembre 1993) : 7011–13. http://dx.doi.org/10.1063/1.355059.

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Yip, Sen Po, Wei Wang et Johnny C. Ho. « (Invited, Digital Presentation) Ternary III-Sb Nanowires : Synthesis and Their Electronic and Optoelectronics Applications ». ECS Meeting Abstracts MA2022-02, no 36 (9 octobre 2022) : 1306. http://dx.doi.org/10.1149/ma2022-02361306mtgabs.

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Nowadays, the increasing demand for low power and highly efficient electronics and optoelectronics has driven the semiconductor industry to look for the alternatives of Si which is approaching its physical limit. Materials like graphene, carbon nanotube, III-V materials and so on, are the most promising candidates as the replacement of silicon. Among them, III-Sb materials, a sub-group of III-V materials, have been extensively researched due to their narrow and direct bandgap, high charge carrier mobility and high g-factor which makes them suitable for transistor, infra red detection and so on. Their nanowire counterparts have also been explored as the geometry of nanowire provide unique advantages. One of the research directions of III-Sb nanowire is to study their ternary counterpart (III-V-Sb or III-III’-Sb) like InAsSb, GaAsSb and InGaSb. Compares with binary compounds, ternary compound provides more room for engineering freedom like lattice parameter engineering and bandgap tuning. In this presentation, the synthesis and the electronic and optoelectronic applications of ternary III-Sb nanowires will be introduced. The high-crystal quality and high-aspect ratio ternary III-Sb nanowires were synthesized by using solid-source chemical vapor deposition method. Composition tunability was demonstrated successfully by adjusting the precursor ratio which allowed us to control the physical properties. We further integrated these nanowires into transistors and photodetectors which exhibit good performance like high carrier mobility and good photoresponse.
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