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Articles de revues sur le sujet « Opto-electronic Devices »

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Auteur : Grafiati
Publié le 7 septembre 2023

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1

Boyanov, Petar. « PRIMARY PROCESSING OF SIGNALS IN AN OPTO-ELECTRONIC DEVICES ». Journal Scientific and Applied Research 8, no 1 (14 novembre 2015) : 10–15. http://dx.doi.org/10.46687/jsar.v8i1.172.

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The energy efficiency of systems for primary processing of signals in opto-electronic devices is analyzed for the case of identification and study of remote objects against a bright background and under low-contrast conditions. A criterion is determined for evaluating the energy efficiency of the major unit of the system for primary signal processing - the optic system, and some expressions are derived, relating the value of the signal-to-noise ratio at the device's input with these criteria (amplification factor) and other "ideal" or "real" optic systems' parameters. The specific thing here is the operation of the system for primary processing of signals when the value of recorded contrast equals 1 percent or less. As an evaluation criterion for the energy efficiency of this system, the signal-to-noise ratio is used. Comparative evaluation of various systems for primary processing of signals operating under low-contrast conditions and specific values of the signal-to-noise ratio is performed. The operation analysis for the system for primary processing of information (signals) under low-contrast conditions is performed accounting for the impact of the optic system. The evaluation criterion for the energy efficiency of the major unit of the system for primary processing of information (the optic system) is the amplification factor, which determines the limit value for the signal-to-noise ratio at the output of the optic-electronic device. The assumption is made that the flow, which determines the circle's area, is uniformly distributed, which does not cause significant errors in evaluating the energy efficiency of the optic-electronic system.
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Bhattacharya, P., S. Ghosh et A. D. Stiff-Roberts. « QUANTUM DOT OPTO-ELECTRONIC DEVICES ». Annual Review of Materials Research 34, no 1 (4 août 2004) : 1–40. http://dx.doi.org/10.1146/annurev.matsci.34.040203.111535.

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3

Stavila, V., A. A. Talin et M. D. Allendorf. « MOF-based electronic and opto-electronic devices ». Chem. Soc. Rev. 43, no 16 (2014) : 5994–6010. http://dx.doi.org/10.1039/c4cs00096j.

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Krawczyk, S. K. « Senso-opto-micro-electronic (somet) devices ». Sensors and Actuators 11, no 3 (avril 1987) : 289–97. http://dx.doi.org/10.1016/0250-6874(87)80008-2.

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5

Ahuja, Swati, Mark Scarbecz, Heath Balch et David R Cagna. « Verification of the Accuracy of Electronic Mandibular Movement-recording Devices : An in vitro Investigation ». International Journal of Experimental Dental Science 6, no 2 (2017) : 84–94. http://dx.doi.org/10.5005/jp-journals-10029-1162.

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ABSTRACT Aims and objectives To determine the accuracy of an opto-electronic pantograph (Freecorder Bluefox, Dentron) in locating a known transverse horizontal axis (THA); To determine the accuracy of the opto-electronic pantograph and the mechano-electronic pantograph (Cadiax Compact 2, Whip Mix Corp) in recording preset condylar control values; and additionally, compare the accuracy of the opto-electronic and mechano-electronic pantographs with each other. Materials and methods A fully adjustable articulator (Denar D5A, Whip Mix Corp) was employed as a mock patient. True condylar control settings and condylar control values determined by each recording device were documented and statistically analyzed using 2-sample independent t-tests (p < 0.05). Results Statistical data analysis indicated that (1) the opto-electronic pantograph did not accurately locate the known THA; (2) the condylar control values registered by opto-electronic and the mechano-electronic pantographs were statistically different from the preset condylar control values; and (3) different degrees of accuracy existed between the opto-electronic pantograph and mechano-electronic pantograph. Conclusion Errors up to 5 mm in the location of the THA may not have much clinical significance. The majority of articulator condylar control settings predicted by the opto-electronic and mechano-electronic pantographs investigated in this study were statistically different. Clinically, the predicted mean values for the lateral condylar inclination (LCI) and progressive mandibular lateral translation (PMLT) were within 5° of the known mock patient settings. However, the medial wall angulation and immediate side shift values obtained from the opto-electronic instrument suffered from large errors. Clinical implication Practical goals for complex restorative dentistry often include attaining accurate occlusal relationships, simulating the patient's mandibular movements in the laboratory using three-dimensional instrumentation and achieving desired occlusal contacts and relationships. Clinicians may rely on mandibular motion-recording devices to render accurate and useful information. Cost of purchase of electronic mandibular motion-recording devices (opto-electronic and mechano-electronic recorders), their accuracy, and time required for training should be compared with the use of conventional pantographs. The use of electronic pantograph may lead to savings in time and efforts over conventional pantograph and interocclusal records. How to cite this article Balch H, Cagna DR, Ahuja S, Scarbecz M. Verification of the Accuracy of Electronic Mandibular Movement-recording Devices: An in vitro Investigation. Int J Experiment Dent Sci 2017;6(2):84-94.
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Nikić, Marta, Aleksandar Opančar, Florian Hartmann, Ludovico Migliaccio, Marie Jakešová, Eric Daniel Głowacki et Vedran Đerek. « Micropyramid structured photo capacitive interfaces ». Nanotechnology 33, no 24 (23 mars 2022) : 245302. http://dx.doi.org/10.1088/1361-6528/ac5927.

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Abstract Optically driven electronic neuromodulation devices are a novel tool in basic research and offer new prospects in medical therapeutic applications. Optimal operation of such devices requires efficient light capture and charge generation, effective electrical communication across the device’s bioelectronic interface, conformal adhesion to the target tissue, and mechanical stability of the device during the lifetime of the implant—all of which can be tuned by spatial structuring of the device. We demonstrate a 3D structured opto-bioelectronic device—an organic electrolytic photocapacitor spatially designed by depositing the active device layers on an inverted micropyramid-shaped substrate. Ultrathin, transparent, and flexible micropyramid-shaped foil was fabricated by chemical vapour deposition of parylene C on silicon moulds containing arrays of inverted micropyramids, followed by a peel-off procedure. The capacitive current delivered by the devices showed a strong dependency on the underlying spatial structure. The device performance was evaluated by numerical modelling. We propose that the developed numerical model can be used as a basis for the design of future functional 3D design of opto-bioelectronic devices and electrodes.
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7

Ichinose, Noboru. « Fields of Opto-Electronic Materials and Devices ». JOURNAL OF THE ILLUMINATING ENGINEERING INSTITUTE OF JAPAN 84, no 1 (2000) : 12–21. http://dx.doi.org/10.2150/jieij1980.84.1_12.

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8

Vlad, V. I. « Opto-electronic Bistable Devices for Image Processing ». Optica Acta : International Journal of Optics 32, no 9-10 (septembre 1985) : 1235–50. http://dx.doi.org/10.1080/713821835.

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Ueda, O. « Degradation of III–V Opto‐Electronic Devices ». Journal of The Electrochemical Society 135, no 1 (1 janvier 1988) : 11C—22C. http://dx.doi.org/10.1149/1.2095535.

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10

Heeger, Alan J., et James Long. « Opto-electronic Devices Fabricated from Semiconducting Polymers ». Optics and Photonics News 7, no 8 (1 août 1996) : 23. http://dx.doi.org/10.1364/opn.7.8.000023.

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11

Wilkins, Matthew, Christopher E. Valdivia, Ahmed M. Gabr, Denis Masson, Simon Fafard et Karin Hinzer. « Luminescent coupling in planar opto-electronic devices ». Journal of Applied Physics 118, no 14 (14 octobre 2015) : 143102. http://dx.doi.org/10.1063/1.4932660.

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Osman, Makkawi, Yanmin Huang, Wei Feng, Guangbo Liu, Yunfeng Qiu et PingAn Hu. « Modulation of opto-electronic properties of InSe thin layers via phase transformation ». RSC Advances 6, no 74 (2016) : 70452–59. http://dx.doi.org/10.1039/c6ra13543a.

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Phase engineering of two-dimensional materials offers unique opportunities for acquiring novel opto-electronic properties and allows for the searching of outstanding candidates for applications in opto-electronic devices, catalysis, etc.
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13

Lee, Yeongjun, Sung-Yong Min, Tae-Sik Kim, Su-Hun Jeong, Ju Yeon Won, Hobeom Kim, Wentao Xu, Jae Kyeong Jeong et Tae-Woo Lee. « Opto-Electronic Devices : Versatile Metal Nanowiring Platform for Large-Scale Nano- and Opto-Electronic Devices (Adv. Mater. 41/2016) ». Advanced Materials 28, no 41 (novembre 2016) : 9232. http://dx.doi.org/10.1002/adma.201670292.

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14

Ichinose, Noboru. « New development of opto-electronic materials and devices ». JOURNAL OF THE ILLUMINATING ENGINEERING INSTITUTE OF JAPAN 75, no 11 (1991) : 627–31. http://dx.doi.org/10.2150/jieij1980.75.11_627.

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15

Polman, A., E. Snoeks, G. N. van den Hoven, M. L. Brongersma, R. Serna, J. H. Shin, P. Kik et E. Radius. « Ion beam synthesis of planar opto-electronic devices ». Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms 106, no 1-4 (décembre 1995) : 393–99. http://dx.doi.org/10.1016/0168-583x(95)00738-5.

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16

Wang, Mingchao, Renhao Dong et Xinliang Feng. « Two-dimensional conjugated metal–organic frameworks (2D c-MOFs) : chemistry and function for MOFtronics ». Chemical Society Reviews 50, no 4 (2021) : 2764–93. http://dx.doi.org/10.1039/d0cs01160f.

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17

Li, Jie, Chang Xu, Wan-Ying Zhang, Ping-Ping Shi, Qiong Ye et Da-Wei Fu. « Smart and efficient opto-electronic dual response material based on two-dimensional perovskite crystal/thin film ». Journal of Materials Chemistry C 8, no 6 (2020) : 1953–61. http://dx.doi.org/10.1039/c9tc05954g.

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18

Charas, Ana, et Jorge Morgado. « Oxetane-functionalized Conjugated Polymers in Organic (Opto)Electronic Devices ». Current Physical Chemistry 2, no 3 (1 mai 2012) : 241–64. http://dx.doi.org/10.2174/1877946811202030241.

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Charas, Ana, et Jorge Morgado. « Oxetane-functionalized Conjugated Polymers in Organic (Opto)Electronic Devices ». Current Physical Chemistrye 2, no 3 (1 mai 2012) : 241–64. http://dx.doi.org/10.2174/1877947611202030241.

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20

Greger, E., K. H. Gulden, P. Riel, H. P. Schweizer, M. Moser, T. Kippenberg, G. Schmiedel, P. Kiesel et G. H. Döhler. « Polarization anisotropy of ordered GaInP in opto-electronic devices ». Quantum and Semiclassical Optics : Journal of the European Optical Society Part B 10, no 1 (février 1998) : 271–82. http://dx.doi.org/10.1088/1355-5111/10/1/030.

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21

Wang, Xiaomu, et Xuetao Gan. « Graphene integrated photodetectors and opto-electronic devices — a review ». Chinese Physics B 26, no 3 (mars 2017) : 034203. http://dx.doi.org/10.1088/1674-1056/26/3/034203.

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22

Assali, Abdenacer, et M'hamed Bouslama. « Novel BTlGaN semiconducting materials for infrared opto-electronic devices ». Infrared Physics & ; Technology 81 (mars 2017) : 175–81. http://dx.doi.org/10.1016/j.infrared.2017.01.006.

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23

Grüne, Jeannine, Vladimir Dyakonov et Andreas Sperlich. « Detecting triplet states in opto-electronic and photovoltaic materials and devices by transient optically detected magnetic resonance ». Materials Horizons 8, no 9 (2021) : 2569–75. http://dx.doi.org/10.1039/d1mh00999k.

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24

Acharya, G. B., et M. P. Ghimire. « Electronic and Magnetic Properties of K2Mn3S4 ». Journal of Nepal Physical Society 8, no 3 (30 décembre 2022) : 75–78. http://dx.doi.org/10.3126/jnphyssoc.v8i3.50747.

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Many opto-electronic and energy efficient devices depend on semiconductors’ direct as well as indirect band gap. Using spin-polarized density functional theory approach, we calculate the electronic structure and magnetic properties of K2Mn3S4. We found that this system has a ferrimagnetic ground state with a saturated magnetic moment of 10μB per unit cell. This was mostly caused by the antiferromagnetic interaction between the Mn (I) and Mn (II) atoms, with individual magnetic moment of 4.2 μB and 4.1 μB, respectively. More significantly, from the density of states and band structure calculations, K2Mn3S4 is noted as a semiconductor with an indirect band gap of 1.1 eV between the top of the valence band of spin up channel and bottom of the conduction bands of spin down channel, indicating the material as a promising candidate for photovoltaic and opto-electronic devices.
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25

Lee, Harrison Ka Hin, Andrew M. Telford, Jason A. Röhr, Mark F. Wyatt, Beth Rice, Jiaying Wu, Alexandre de Castro Maciel et al. « The role of fullerenes in the environmental stability of polymer:fullerene solar cells ». Energy & ; Environmental Science 11, no 2 (2018) : 417–28. http://dx.doi.org/10.1039/c7ee02983g.

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Zong, Shu, Dongwen Zeng, Wen Yuan, Guiqiang Liu et Zhengqi Liu. « Recent advances on perfect light absorbers and their promise for high-performance opto-electronic devices [Invited] ». Chinese Optics Letters 20, no 7 (2022) : 073603. http://dx.doi.org/10.3788/col202220.073603.

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Cho, Jangwhan, Seongwon Yoon, Kyu Min Sim, Yong Jin Jeong, Chan Eon Park, Soon-Ki Kwon, Yun-Hi Kim et Dae Sung Chung. « Universal selection rule for surfactants used in miniemulsion processes for eco-friendly and high performance polymer semiconductors ». Energy & ; Environmental Science 10, no 11 (2017) : 2324–33. http://dx.doi.org/10.1039/c7ee01943b.

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Hu, Zehua, Zhangting Wu, Cheng Han, Jun He, Zhenhua Ni et Wei Chen. « Two-dimensional transition metal dichalcogenides : interface and defect engineering ». Chemical Society Reviews 47, no 9 (2018) : 3100–3128. http://dx.doi.org/10.1039/c8cs00024g.

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This review summarizes the recent advances in understanding the effects of interface and defect engineering on the electronic and optical properties of TMDCs, as well as their applications in advanced (opto)electronic devices.
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Sakaki, Hiroyuki. « Special edition Optical devices. 7 Opto-electronic devices using semiconductor quantum well structures. » Journal of the Institute of Television Engineers of Japan 39, no 11 (1985) : 1059–63. http://dx.doi.org/10.3169/itej1978.39.1059.

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30

Cann, Jonathan, Sergey Dayneko, Jon-Paul Sun, Arthur D. Hendsbee, Ian G. Hill et Gregory C. Welch. « N-Annulated perylene diimide dimers : acetylene linkers as a strategy for controlling structural conformation and the impact on physical, electronic, optical and photovoltaic properties ». Journal of Materials Chemistry C 5, no 8 (2017) : 2074–83. http://dx.doi.org/10.1039/c6tc05107c.

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Marrocchi, Assunta, Antonio Facchetti, Daniela Lanari, Chiara Petrucci et Luigi Vaccaro. « Current methodologies for a sustainable approach to π-conjugated organic semiconductors ». Energy & ; Environmental Science 9, no 3 (2016) : 763–86. http://dx.doi.org/10.1039/c5ee03727a.

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32

Getzov, Petar. « EFFICIENCY OF A SYSTEM FOR PRIMARY PROCESSING OF SIGNALS IN AN OPTO-ELECTRONIC DEVICE ». Journal Scientific and Applied Research 12, no 1 (12 novembre 2017) : 5–10. http://dx.doi.org/10.46687/jsar.v12i1.221.

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The energy efficiency of systems for primary processing of signals in optoelectronic devices is analyzed for the case of identification and study of remote objects against a bright background and under low-contrast conditions. A criterion is determined for evaluating the energy efficiency of the major unit of the system for primary signal processing - the optic system, and some expressions are derived, relating the value of the signal-to-noise ratio at the device’s input with these criteria (amplification factor) and other “ideal†or “real†optic systems’ parameters. The specific thing here is the operation of the system for primary processing of signals when the value of recorded contrast equals 1 percent or less. As an evaluation criterion for the energy efficiency of this system, the signal-to-noise ratio is used. Comparative evaluation of various systems for primary processing of signals operating under low-contrast conditions and specific values of the signal-to-noise ratio is performed. The operation analysis for the system for primary processing of information (signals) under low-contrast conditions is performed accounting for the impact of the optic system.
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33

Zorn, M., T. Trepk, T. Schenk, J. T. Zettler et M. Weyers. « AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices ». Journal of Crystal Growth 298 (janvier 2007) : 23–27. http://dx.doi.org/10.1016/j.jcrysgro.2006.10.212.

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34

Zuppiroli, L., L. Si-Ahmed, K. Kamaras, F. Nüesch, M. N. Bussac, D. Ades, A. Siove, E. Moons et M. Grätzel. « Self-assembled monolayers as interfaces for organic opto-electronic devices ». European Physical Journal B 11, no 3 (octobre 1999) : 505–12. http://dx.doi.org/10.1007/s100510050962.

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35

Ma, Hong, Michelle S. Liu et Alex K.-Y. Jen. « Interface-tailored and nanoengineered polymeric materials for (opto)electronic devices ». Polymer International 58, no 6 (3 avril 2009) : 594–619. http://dx.doi.org/10.1002/pi.2572.

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36

Mohammad, S. N., W. Kim, A. Salvador et H. Morkoç. « Reactive Molecular-Beam Epitaxy for Wurtzite GaN ». MRS Bulletin 22, no 2 (février 1997) : 22–28. http://dx.doi.org/10.1557/s0883769400032528.

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A1N, GaN, and InN are very promising materials for use in optoelectronic and high-temperature electronic devices. These materials and their ternary and quaternary alloys cover an energy bandgap range of 1.9–6.2 eV, suitable for band-to-band light generation with colors ranging from red to ultraviolet (uv), with wavelengths ranging from 650 to 200 nm. On the device front, they are suitable for example for negative electron-affinity cold cathodes, electronic devices, surface acoustic wave devices, uv detectors, Bragg reflectors and waveguides, uv and visible light-emitting diodes (LEDs), and laser diodes (LDs) for digital data read-write applications. Stifled by the absence of native substrates, growth and doping of high-quality III-V-nitride thin films, particularly p-type, have been major obstacles for developing GaN-based devices. Development of electronic devices such as modulation-doped field-effect transistors (MODFETs) and opto-electronic devices such as LEDs and LDs has also proven challenging.
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Carbone, Marilena. « NiO-Based Electronic Flexible Devices ». Applied Sciences 12, no 6 (10 mars 2022) : 2839. http://dx.doi.org/10.3390/app12062839.

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Personal, portable, and wearable electronics have become items of extensive use in daily life. Their fabrication requires flexible electronic components with high storage capability or with continuous power supplies (such as solar cells). In addition, formerly rigid tools such as electrochromic windows find new utilizations if they are fabricated with flexible characteristics. Flexibility and performances are determined by the material composition and fabrication procedures. In this regard, low-cost, easy-to-handle materials and processes are an asset in the overall production processes and items fruition. In the present mini-review, the most recent approaches are described in the production of flexible electronic devices based on NiO as low-cost material enhancing the overall performances. In particular, flexible NiO-based all-solid-state supercapacitors, electrodes electrochromic devices, temperature devices, and ReRAM are discussed, thus showing the potential of NiO as material for future developments in opto-electronic devices.
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38

Fadil, Dalal, Ridwan F. Hossain, Gustavo A. Saenz et Anupama B. Kaul. « On the chemically-assisted excitonic enhancement in environmentally-friendly solution dispersions of two-dimensional MoS2 and WS2 ». Journal of Materials Chemistry C 5, no 22 (2017) : 5323–33. http://dx.doi.org/10.1039/c7tc01001j.

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Terpineol leads to effective exfoliation and excitonic enhancement in solution dispersions of MoS2 and WS2, which also yields enhancement in electronic transport properties. Such dispersions are amenable to high-performance electronic and opto-electronic devices using manufacturable routes.
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Delouche, Thomas, Ghizlene Taifour, Marie Cordier, Thierry Roisnel, Denis Tondelier, Payal Manzhi, Bernard Geffroy et al. « Si-containing polycyclic aromatic hydrocarbons : synthesis and opto-electronic properties ». Chemical Communications 58, no 1 (2022) : 88–91. http://dx.doi.org/10.1039/d1cc06309j.

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Chibueze, TC. « Ab initio study of mechanical, phonon and electronic Properties of cubic zinc-blende structure of ZnO ». NIGERIAN ANNALS OF PURE AND APPLIED SCIENCES 4, no 1 (19 août 2021) : 130–38. http://dx.doi.org/10.46912/napas.190.

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The search for functional materials in opto-electronic devices is a major aspect of material research in contemporary times and a meta-stable structure of ZnO has been proposed as one such relevant materials. Herein the elastic constants, lattice dynamical and electronic properties of the cubic zinc-blende ZnO (ZB-ZnO) were studied at ambient pressure using the density functional theory method within the generalized gradient approximation. The result shows that ZB-ZnO is mechanically and dynamically stable, ductile and a direct band gap semiconductor and is very promising for opto-electronic applications. The results are in fair agreement with the available data in the literature.
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41

Liu, Henan, Hao Zhang, Xunling Xu et Lin Zhang. « The Opto-Electronic Functional Devices Based on Three-Dimensional Lead Halide Perovskites ». Applied Sciences 11, no 4 (5 février 2021) : 1453. http://dx.doi.org/10.3390/app11041453.

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These days, opto-electronic functional devices based on three-dimensional lead halide perovskites (LHPs) are emerging. LHPs could be spin-coated to other materials, making it very convenient to combine LHPs with different categories of materials including metals, semiconductors, and polymers and achieve high-level performances. In this review, we will discuss the development in the LHP-based functional devices in recent years. After a brief presentation of the LHP’s properties, we will focus on the functional devices including lasers, photodetectors, and modulators. Then the fabrication of the LHP-based devices will be presented, which is followed by the summary and outlook.
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42

Wang, Qi, Jiacheng Yang, Antoni Franco-Cañellas, Christoph Bürker, Jens Niederhausen, Pierre Dombrowski, Felix Widdascheck et al. « Pentacene/perfluoropentacene bilayers on Au(111) and Cu(111) : impact of organic–metal coupling strength on molecular structure formation ». Nanoscale Advances 3, no 9 (2021) : 2598–606. http://dx.doi.org/10.1039/d1na00040c.

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As crucial element in organic opto-electronic devices, heterostructures are of pivotal importance. A comprehensive study of a donor–acceptor (D–A) bilayer structure is presented, using UPS, XPS, LEED and NIXSW techniques.
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43

Möck, P., G. R. Booker, E. Alphandery, N. J. Mason et R. J. Nicholas. « Self-Organized Sb-Based Quantum Dots Studied by Means of AFM, TEM and PL ». Microscopy and Microanalysis 6, S2 (août 2000) : 1102–3. http://dx.doi.org/10.1017/s1431927600038009.

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There is currently an increasing interest in the growth and characterisation of semiconductor quantum dots (QDs) for potential use in opto-electronic devices. Heteroepitaxy in the Stranski-Krastanow growth mode is thought to be one of the most promising routes towards the fabrication of such QDs. Little work has been done so far to extend the range of wavelength at which potential QD based opto-electronic devises might work into the middle infrared region of the electromagnetic spectrum. The aim of this paper is to expand on our previous reports on such work and to present new experimental observations concerning the formation of InSb rich QDs in GaSb and InAs matrices. Preliminary results on GaSb rich islands on GaAs are also given for comparison purposes. All samples were grown by metal-organic vapour phase epitaxy on nominal (001) GaAs and GaSb substrates at susceptor temperatures ranging from 460 to 545 °C.
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Qing, Ting, Shupeng Li, Xiaohu Tang, Ping Li, Xufeng Chen, Lihan Wang, Yijie Fang, Meihui Cao, Lugang Wu et Shilong Pan. « Comprehensive vector analysis for electro-optical, opto-electronic, and optical devices ». Optics Letters 46, no 8 (6 avril 2021) : 1856. http://dx.doi.org/10.1364/ol.422817.

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Funahashi, Masahiro, et Jun-ichi Hanna. « Photoconductive Smectic Liquid Crystals and Their Application to Opto-Electronic Devices. » Journal of Synthetic Organic Chemistry, Japan 58, no 9 (2000) : 887–92. http://dx.doi.org/10.5059/yukigoseikyokaishi.58.887.

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Wang Qin, 汪钦, 徐红春 Xu Hongchun et 胡广文 Hu Guangwen. « Planar Lightwave Circuit Opto-Electronic Integrated Devices for Passive Optical Network ». Laser & ; Optoelectronics Progress 49, no 11 (2012) : 112301. http://dx.doi.org/10.3788/lop49.112301.

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Iotti, Rita C., et Fausto Rossi. « Microscopic Modelling of Opto-Electronic Quantum Devices : A Predictive Simulation Tool ». Journal of Computational Electronics 2, no 2-4 (décembre 2003) : 191–95. http://dx.doi.org/10.1023/b:jcel.0000011423.43254.57.

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Taylor, G. W., D. L. Crawford, P. A. Kiely, S. K. Sargood, P. Cooke, A. Izabelle, T. Y. Chang et al. « GaAs/AlGaAs inversion channel devices for an integrated opto-electronic technology ». IEEE Transactions on Electron Devices 35, no 12 (1988) : 2446. http://dx.doi.org/10.1109/16.8871.

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Ha, Ye Eun, Gyeong Eun Lim, Mi Young Jo, Juyun Park, Yong-Cheol Kang, Sang-Jin Moon et Joo Hyun Kim. « Enhancing the efficiency of opto-electronic devices by the cathode modification ». J. Mater. Chem. C 2, no 19 (2014) : 3820–25. http://dx.doi.org/10.1039/c3tc32430c.

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Majee, Subimal, Maria Fátima Cerqueira, Denis Tondelier, Bernard Geffroy, Yvan Bonnassieux, Pedro Alpuim et Jean Eric Bourée. « Flexible organic–inorganic hybrid layer encapsulation for organic opto-electronic devices ». Progress in Organic Coatings 80 (mars 2015) : 27–32. http://dx.doi.org/10.1016/j.porgcoat.2014.11.015.

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