Littérature scientifique sur le sujet « On-Wafer characterization »
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Articles de revues sur le sujet "On-Wafer characterization"
Saedon, Juri B., Siti Musalmah Md Ibrahim, Amir Radzi Abd Ghani et Muhammad Hafizi Bin Abd Razak. « Dicing Characterization on Optical Silicon Wafer Waveguide ». Applied Mechanics and Materials 899 (juin 2020) : 163–68. http://dx.doi.org/10.4028/www.scientific.net/amm.899.163.
Texte intégralKoolen, M. C. A. M. « On-wafer high-frequency device characterization ». Microelectronic Engineering 19, no 1-4 (septembre 1992) : 679–86. http://dx.doi.org/10.1016/0167-9317(92)90521-r.
Texte intégralLau, J. H., P.-J. Tzeng, C.-K. Lee, C.-J. Zhan, M.-J. Dai, Li Li, C.-T. Ko et al. « Wafer Bumping and Characterizations of Fine-Pitch Lead-Free Solder Microbumps on 12” (300mm) wafer for 3D IC Integration ». International Symposium on Microelectronics 2011, no 1 (1 janvier 2011) : 000650–56. http://dx.doi.org/10.4071/isom-2011-wa6-paper2.
Texte intégralTeixeira, Jorge, Mário Ribeiro et Nélson Pinho. « Advanced warpage characterization for FOWLP ». International Symposium on Microelectronics 2013, no 1 (1 janvier 2013) : 000641–46. http://dx.doi.org/10.4071/isom-2013-wp21.
Texte intégralKerepesi, Péter, Bernhard Rebhan, Matthias Danner, Karin Stadlmann, Heiko Groiss, Peter Oberhumer, Jiri Duchoslav et Kurt Hingerl. « Oxide-Free SiC-SiC Direct Wafer Bonding and Its Characterization ». ECS Transactions 112, no 3 (29 septembre 2023) : 159–72. http://dx.doi.org/10.1149/11203.0159ecst.
Texte intégralDeleniv, Anatoly, Andrei Vorobiev et Spartak Gevorgian. « On-Wafer Characterization of Varactor Using Resonating Microprobes ». IEEE Transactions on Microwave Theory and Techniques 56, no 5 (mai 2008) : 1105–11. http://dx.doi.org/10.1109/tmtt.2008.921283.
Texte intégralLaskar, J., J. J. Bautista, M. Nishimoto, M. Hamai et R. Lai. « Development of accurate on-wafer, cryogenic characterization techniques ». IEEE Transactions on Microwave Theory and Techniques 44, no 7 (juillet 1996) : 1178–83. http://dx.doi.org/10.1109/22.508659.
Texte intégralMoore, B., M. Margala et C. Backhouse. « Design of wireless on-wafer submicron characterization system ». IEEE Transactions on Very Large Scale Integration (VLSI) Systems 13, no 2 (février 2005) : 169–80. http://dx.doi.org/10.1109/tvlsi.2004.840780.
Texte intégralCHEN, CHIH-HUNG. « ACCURACY ISSUES OF ON-WAFER MICROWAVE NOISE MEASUREMENTS ». Fluctuation and Noise Letters 08, no 03n04 (décembre 2008) : L281—L303. http://dx.doi.org/10.1142/s0219477508005136.
Texte intégralSeong, Inho, Jinho Lee, Sijun Kim, Youngseok Lee, Chulhee Cho, Jangjae Lee, Wonnyoung Jeong, Yebin You et Shinjae You. « Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma ». Nanomaterials 12, no 22 (10 novembre 2022) : 3963. http://dx.doi.org/10.3390/nano12223963.
Texte intégralThèses sur le sujet "On-Wafer characterization"
Lee, Jun Seok. « On-Wafer Characterization of Electromagnetic Properties of Thin-Film RF Materials ». The Ohio State University, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=osu1308311479.
Texte intégralCabbia, Marco. « (Sub)-millimeter wave on-wafer calibration and device characterization ». Thesis, Bordeaux, 2021. http://www.theses.fr/2021BORD0017.
Texte intégralPrecision measurements play a crucial role in electronic engineering, particularly in the characterization of silicon-based heterojunction bipolar transistors (HBTs) embedded into devices for THz applications using the BiCMOS technology. Thanks to ongoing innovations in terms of nanoscale technology manufacturing, devices capable of operating in the sub-millimeter wave region are becoming a reality, and need to support the demand for high frequency circuits and systems. To have accurate models at such frequencies, it is no longer possible to limit the parameter extraction below 110 GHz, and new techniques for obtaining reliable measurements of passive and active devices must be investigated.In this thesis, we examine the on-wafer S-parameters characterization of various passive test structures and SiGe HBTs in STMicroelectronics' B55 technology, up to 500 GHz. We start with an introduction of the measuring equipment usually employed for this type of analysis, then moving on to the various probe stations adopted at the IMS Laboratory, and finally focusing on calibration and deembedding techniques, reviewing the major criticalities of high-frequency characterization and comparing two on-wafer calibration algorithms (SOLT and TRL) up to the WR-2.2 band.Two photomask production runs for on-wafer characterization, both designed at IMS, are considered: we introduce a new floorplan design and evaluate its ability to limit parasitic effects as well as the effect of the environment (substrate, neighbors, and crosstalk). For our analysis, we rely on electromagnetic simulations and joint device model + probe EM simulations, both including probe models for an evaluation of measurement results closer to real-world conditions.Finally, we present some test structures to evaluate unwanted impacts on millimeter wave measurements and novel transmission line design solutions. Two promising designs are carefully studied: the "M3 layout", which aims to characterize the DUT in a single-tier calibration, and the "meander lines", which keeps the inter-probe distance constant by avoiding any sort of probe displacement during on-wafer measurements
Maranon, Walter. « Characterization of Boron Nitride Thin Films on Silicon (100) Wafer ». Thesis, University of North Texas, 2007. https://digital.library.unt.edu/ark:/67531/metadc3942/.
Texte intégralLi, Ling-Guang. « Fabrication and Characterization of Si-on-SiC Hybrid Substrates ». Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-221664.
Texte intégralLi, Qian. « SIGNAL INTEGRITY ANALYSIS ON MATERIALS AND VIA STRUCTURES MODELING AND CHARACTERIZATION ». Diss., The University of Arizona, 2011. http://hdl.handle.net/10150/203472.
Texte intégralShaporin, Alexey. « Dynamic parameter identification techniques and test structures for microsystems characterization on wafer level ». Doctoral thesis, Chemnitz Univ.-Verl, 2009. http://d-nb.info/1000815250/04.
Texte intégralShaporin, Alexey. « Dynamic parameter identification techniques and test structures for microsystems characterization on wafer level ». Doctoral thesis, Universitätsbibliothek Chemnitz, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200901902.
Texte intégralIn this work a method for the characterization of microsystems with movable components is presented. The method allows to determine the relevant parameters and their variations on wafer level if the nominal shape of the structure and the type of deviations are known. The method is based on a comparison of the numerically calculated and experimentally measured Eigenfrequencies of the microsystems. For that purpose, the relationships between various Eigenfrequencies and the searched parameters are calculated by parameter variation analysis and the results of this analysis are approximated with appropriate functions. A Laser Doppler vibrometer based motion analyzer is used to determine the frequency response function of the micromechanical structure and extract Eigenfrequencies. The comparison of the measured and the calculated frequencies provides values for the searched parameters. The key element of the developed method is the measurement on special test structures that are placed in the wafer layout next to the actual microsystems and processed in the same technological process parallel to the actual microsystems. Algorithms for designing the test structures and their placement in the wafer layout are shown, taking into account the design of the actual microsystems and the function parameters of the technological process as well as material characteristics. As a result, a library of standard test structures for function relevant parameters is available. A general guideline for the measurement on the test structures is presented. The presented method is verified on various microsystems and extended to a whole class of microsystems with movable components
Jamshidifar, Mehran [Verfasser]. « On-wafer characterization of mm-wave and THz circuits using electrooptic sampling / Mehran Jamshidifar ». Siegen : Universitätsbibliothek der Universität Siegen, 2017. http://d-nb.info/112945326X/34.
Texte intégralLotfi, Sara. « Design and Characterization of RF-LDMOS Transistors and Si-on-SiC Hybrid Substrates ». Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-215390.
Texte intégralZhao, Lv. « On the fracture of solar grade crystalline silicon wafer ». Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI134/document.
Texte intégralThe profitability of silicon solar cells is a critical point for the PV market and it requires improved electrical performance, lower wafer production costs and enhancing reliability and durability of the cells. Innovative processes are emerging that provide thinner wafers with less raw material loss. But the induced crystallinity and distribution of defects compared to the classical wafers are unclear. It is therefore necessary to develop methods of microstructural and mechanical characterization to assess the rigidity and mechanical strength of these materials. In this work, 4-point bending tests were performed under quasi-static loading. This allowed to conduct both the stiffness estimation and the rupture study. A high speed camera was set up in order to track the fracture process thanks to a 45° tilted mirror. Fractographic analysis were performed using confocal optical microscope, scanning electron microscope and atomic force microscope. Electron Back-Scatter Diffraction and Laue X-Ray diffraction were used to explore the relationship between the microstructural grains orientations/textures of our material and the observed mechanical behavior. Jointly, finite element modeling and simulations were carried out to provide auxiliary characterization tools and help to understand the involved fracture mechanism. Thanks to the experiment-simulation coupled method, we have assessed accurately the rigidity of silicon wafers stemming from different manufacturing processes. A fracture origin identification strategy has been proposed combining high speed imaging and post-mortem fractography. Fracture investigations on silicon single crystals have highlighted the deflection free (110) cleavage path, the high initial crack velocity, the velocity dependent crack front shape and the onset of front waves in high velocity crack propagation. The investigations on the fracture of multi-crystalline wafers demonstrate a systematic transgranular cracking. Furthermore, thanks to twin multi-crystalline silicon plates, we have addressed the crack path reproducibility. A special attention has been paid to the nature of the cleavage planes and the grain boundaries barrier effect. Finally, based on these observations, an extended finite element model (XFEM) has been carried out which fairly reproduces the experimental crack path
Livres sur le sujet "On-Wafer characterization"
Rumiantsev, Andrej. On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond. New York : River Publishers, 2022. http://dx.doi.org/10.1201/9781003338994.
Texte intégralSymposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials (1995 Reno, Nevada). Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII). Pennington, NJ : Electrochemical Society, 1995.
Trouver le texte intégralRumiantsev, Andrej. On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range. River Publishers, 2019.
Trouver le texte intégralRumiantsev, Andrej. On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range and Beyond. River Publishers, 2022.
Trouver le texte intégralOn-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range and Beyond. River Publishers, 2019.
Trouver le texte intégralRumiantsev, Andrej. On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range and Beyond. River Publishers, 2022.
Trouver le texte intégralAutomatic RF Techniques Group Conference. 63rd Arftg Conference Digest, Spring 2004 : Automatic RF Techniques Group : On Wafer Characterization, 11 June 2004, Fort Worth, TX. Institute of Electrical & Electronics Enginee, 2004.
Trouver le texte intégralRumiantsev, Andrej. On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range and Beyond. River Publishers, 2022.
Trouver le texte intégralSwaminathan, V. Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Materials and the Twenty-Second State-Of-The-Art Program on Compoun (Proceeding). Electrochemical Society, 1995.
Trouver le texte intégralChapitres de livres sur le sujet "On-Wafer characterization"
Rumiantsev, Andrej. « Verification Methods for On-Wafer Calibration ». Dans On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond, 89–96. New York : River Publishers, 2022. http://dx.doi.org/10.1201/9781003338994-7.
Texte intégralRumiantsev, Andrej. « Design of On-Wafer Calibration Standards ». Dans On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond, 51–67. New York : River Publishers, 2022. http://dx.doi.org/10.1201/9781003338994-5.
Texte intégralRumiantsev, Andrej. « Addressing Issues of On-Wafer Standards ». Dans On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond, 109–17. New York : River Publishers, 2022. http://dx.doi.org/10.1201/9781003338994-9.
Texte intégralHeuermann, Holger, et Andrej Rumiantsev. « The Modified Ripple Test for On-Wafer S-Parameter Measurements ». Dans On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond, 234–38. New York : River Publishers, 2022. http://dx.doi.org/10.1201/9781003338994-32.
Texte intégralHeuermann, Holger, Andrej Rumiantsev et Steffen Schott. « Advanced On-Wafer Multiport Calibration Methods for Mono- and Mixed-Mode Device Characterization ». Dans On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond, 170–75. New York : River Publishers, 2022. http://dx.doi.org/10.1201/9781003338994-16.
Texte intégralRumiantsev, Andrej, Holger Heuermann et Steffen Schott. « A Robust Broadband Calibration Method for Wafer-Level Characterization of Multiport Devices ». Dans On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond, 176–80. New York : River Publishers, 2022. http://dx.doi.org/10.1201/9781003338994-17.
Texte intégralRumiantsev, Andrej, Susan L. Sweeney et Phillip L. Corson. « Comparison of On-Wafer Multiline TRL and LRM+ Calibrations for RF CMOS Applications ». Dans On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond, 194–98. New York : River Publishers, 2022. http://dx.doi.org/10.1201/9781003338994-22.
Texte intégralKukreja, R. S., et Raj N. Singh. « Synthesis and Characterization of C-N Thin Films Deposited on Si (100) Wafer by MPCVD ». Dans Ceramic Transactions Series, 89–94. Hoboken, NJ, USA : John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118408162.ch9.
Texte intégralRumiantsev, A., G. Fisher et R. Doerner. « Sensitivity Analysis of Wafer-Level Over-Temperature RF Calibration ». Dans On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond, 224–27. New York : River Publishers, 2022. http://dx.doi.org/10.1201/9781003338994-29.
Texte intégralRumiantsev, Andrej, et Ralf Doerner. « Verification of Wafer-Level Calibration Accuracy at High Temperatures ». Dans On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond, 219–23. New York : River Publishers, 2022. http://dx.doi.org/10.1201/9781003338994-28.
Texte intégralActes de conférences sur le sujet "On-Wafer characterization"
Maya, Carmen, Antonio Lazaro et Lluis Pradell. « On-wafer noise source characterization ». Dans Second International Symposium on Fluctuations and Noise, sous la direction de Francois Danneville, Fabrizio Bonani, M. Jamal Deen et Michael E. Levinshtein. SPIE, 2004. http://dx.doi.org/10.1117/12.546375.
Texte intégralTeodorescu, L., F. Drăghici, I. Rusu et G. Brezeanu. « On-wafer high temperature characterization system ». Dans Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2016, sous la direction de Marian Vladescu, Razvan Tamas et Ionica Cristea. SPIE, 2016. http://dx.doi.org/10.1117/12.2247062.
Texte intégralGalatro, L., et M. Spirito. « Calibration and characterization techniques for on-wafer device characterization ». Dans 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS). IEEE, 2015. http://dx.doi.org/10.1109/newcas.2015.7181978.
Texte intégralBodermann, Bernd, Egbert Buhr, Hans-Ulrich Danzebrink, Markus Bär, Frank Scholze, Michael Krumrey, Matthias Wurm et al. « Joint Research on Scatterometry and AFM Wafer Metrology ». Dans FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS : 2011. AIP, 2011. http://dx.doi.org/10.1063/1.3657910.
Texte intégralMessick, C. R., et T. E. Turner. « A Generic Test Structure Heater Design And Characterization ». Dans International Report on Wafer Level Reliability Workshop. IEEE, 1992. http://dx.doi.org/10.1109/iwlr.1992.657988.
Texte intégralPham, A., J. Laskar et J. Schappacher. « Development of On-Wafer Microstrip Characterization Techniques ». Dans 47th ARFTG Conference Digest. IEEE, 1996. http://dx.doi.org/10.1109/arftg.1996.327168.
Texte intégralRanda, J., D. Walker, L. Dunleavy, R. Billinger et J. Rice. « Characterization of On-Wafer Diode Noise Sources ». Dans 51st ARFTG Conference Digest. IEEE, 1998. http://dx.doi.org/10.1109/arftg.1998.327277.
Texte intégralBitincka, E., et M. K. Smit. « Novel On-wafer Technique for Loss Characterization ». Dans Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C. : OSA, 2014. http://dx.doi.org/10.1364/iprsn.2014.im3a.4.
Texte intégralTsidilkovski, E., A. Bertuch, Erik M. Secula, David G. Seiler, Rajinder P. Khosla, Dan Herr, C. Michael Garner, Robert McDonald et Alain C. Diebold. « The Effect of Surface Conditioning on Silicon Wafer Resistivity Monitoring ». Dans FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS : 2009. AIP, 2009. http://dx.doi.org/10.1063/1.3251246.
Texte intégralWang, Jason. « Controlling Wafer Contamination Using Automated On-Line Metrology during Wet Chemical Cleaning ». Dans CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY : 2003 International Conference on Characterization and Metrology for ULSI Technology. AIP, 2003. http://dx.doi.org/10.1063/1.1622486.
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