Littérature scientifique sur le sujet « Nanostructured Oxide Semiconductors »
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Articles de revues sur le sujet "Nanostructured Oxide Semiconductors"
Sun, Peng. « Gas Sensors Based on Oxide Semiconductors with Porous Nanostructures ». Proceedings 14, no 1 (19 juin 2019) : 13. http://dx.doi.org/10.3390/proceedings2019014013.
Texte intégralDíaz, Carlos, Marjorie Segovia et Maria Luisa Valenzuela. « Solid State Nanostructured Metal Oxides as Photocatalysts and Their Application in Pollutant Degradation : A Review ». Photochem 2, no 3 (5 août 2022) : 609–27. http://dx.doi.org/10.3390/photochem2030041.
Texte intégralJohn Chelliah, Cyril R. A., et Rajesh Swaminathan. « Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures ». Nanotechnology Reviews 6, no 6 (27 novembre 2017) : 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.
Texte intégralGaloppini, Elena. « (Invited) Bridge Design for Photoactive Molecules at Interfaces ». ECS Meeting Abstracts MA2018-01, no 31 (13 avril 2018) : 1849. http://dx.doi.org/10.1149/ma2018-01/31/1849.
Texte intégralLimongelli, Julia, Felicia Tolea, Mihaela Valeanu, Lucian Diamandescu, Tianhong Xu et Monica Sorescu. « Nanostructured iridium oxide-hematite magnetic ceramic semiconductors ». Ceramics International 41, no 1 (janvier 2015) : 333–43. http://dx.doi.org/10.1016/j.ceramint.2014.08.076.
Texte intégralAnta, Juan A. « Electron transport in nanostructured metal-oxide semiconductors ». Current Opinion in Colloid & ; Interface Science 17, no 3 (juin 2012) : 124–31. http://dx.doi.org/10.1016/j.cocis.2012.02.003.
Texte intégralMcGehee, Michael D. « Nanostructured Organic–Inorganic Hybrid Solar Cells ». MRS Bulletin 34, no 2 (février 2009) : 95–100. http://dx.doi.org/10.1557/mrs2009.27.
Texte intégralDadkhah, Mehran, et Jean-Marc Tulliani. « Nanostructured Metal Oxide Semiconductors towards Greenhouse Gas Detection ». Chemosensors 10, no 2 (30 janvier 2022) : 57. http://dx.doi.org/10.3390/chemosensors10020057.
Texte intégralRud, Vasily, Doulbay Melebaev, Viktor Krasnoshchekov, Ilya Ilyin, Eugeny Terukov, Maksim Diuldin, Alexey Andreev, Maral Shamuhammedowa et Vadim Davydov. « Photosensitivity of Nanostructured Schottky Barriers Based on GaP for Solar Energy Applications ». Energies 16, no 5 (28 février 2023) : 2319. http://dx.doi.org/10.3390/en16052319.
Texte intégralBhaumik, Anagh, Austin M. Shearin, Rishi Patel et Kartik Ghosh. « Significant enhancement of optical absorption through nano-structuring of copper based oxide semiconductors : possible future materials for solar energy applications ». Phys. Chem. Chem. Phys. 16, no 22 (2014) : 11054–66. http://dx.doi.org/10.1039/c4cp00827h.
Texte intégralThèses sur le sujet "Nanostructured Oxide Semiconductors"
Berhe, Seare Ahferom. « Acceptor-sensitizers for Nanostructured Oxide Semiconductor in Excitonic Solar Cells ». Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc699927/.
Texte intégralWang, Jinfeng. « Characterization and synthesis of nanoscale materials ». Diss., Rolla, Mo. : Missouri University of Science and Technology, 2008. http://scholarsmine.mst.edu/thesis/pdf/JinfengWang_09007dcc80564540.pdf.
Texte intégralVita. The entire thesis text is included in file. Title from title screen of thesis/dissertation PDF file (viewed August 28, 2008) Thesis completed as part of a cooperative degree program with Missouri University of Science & Technology and the University of Missouri--St. Louis. Includes bibliographical references (p. 129-142).
Akande, Amos Adeleke. « Gas sensing properties of nanostructured vanadium oxide semiconductors by chemoresistive and optical methods ». Thesis, University of Pretoria, 2017. http://hdl.handle.net/2263/65892.
Texte intégralThesis (PhD)--University of Pretoria, 2017.
Physics
PhD
Unrestricted
Zhang, Shaolin. « Wide band gap nanomaterials and their applications ». Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B41758225.
Texte intégralZhang, Shaolin, et 張少林. « Wide band gap nanomaterials and their applications ». Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B41758225.
Texte intégralLima, Francisco Anderson de Sousa. « Application of transition-metal-oxide-based nanostructured thin films on third generation solar cells ». reponame:Repositório Institucional da UFC, 2015. http://www.repositorio.ufc.br/handle/riufc/14584.
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One of the greatest challenges of our time is to devise means to provide energy in a sustainable way to attend an exponentially growing demand. The energy demand is expected to grow 56% by 2040. In this context, the use of clean and sustainable sources of energy is imperative. Among these sources, solar energy is the only one which can meet the total world energy requirement even considering such large growth in demand. The solar power incident on the Earth's surface every second is equivalent to 4 trillion 100-watt light bulbs. Photovoltaic solar cells are one of several ways to harness solar energy. These cells convert solar energy directly into electricity. Commercial photovoltaic devices are already a reality, but their share of the world energy matrix is still quite small, mainly due to the high costs. Next generation photovoltaics open a number of new possibilities for photovoltaic energy applications that can potentially decrease the overall cost of energy production. Transition metal semiconductor oxides are promising materials that can be produced by low cost methods and o er interesting new features. The use of these materials in next generation photovoltaics is therefore a very promising and interesting application. In this thesis work zinc, titanium and vanadium oxides were used in next generation solar cells. Thin lms of zinc oxide were synthesized by the low cost and environmentally friendly techniques of electrodeposition and hydrothermal synthesis and applied as working electrodes in highly e cient dye sensitized solar cells (DSSCs). The lms were characterized by structural and optical techniques while the cells were tested by current vs: voltage and quantum e ciency measurements. The e ciencies of these cells were as high as 2.27% using ZnO thin lms without any post deposition treatment. Moreover, natural dyes extracted from plants of northeastern Brazil were applied as sensitizers in DSSCs assembled with commercial available TiO 2 as working electrode. The natural dyes were extracted employing very simple methods and were characterized by XPS and UPS techniques. Their band alignments were shown to be compatible with the TiO 2 as well as with the mediator electrolyte. The e ciency of DSSCs sensitized with natural dyes were as high as 1.33%. Finally, water based V 2 O 5 was used as hole transport medium (HTM) in conventional organic solar cells (OSCs) and ITO-free, plastic OSCs. The results obtained with V 2 O 5 were compared with the results obtained from cells assembled with PEDOT:PSS, which is the most used HTM. This comparison showed that the use of V 2 O 5 as HTM can lead to more e cient OSCs. The stability of these devices were evaluated by tests applying the ISOS standards ISOS-D-1, ISOS-L-1 and ISOS-O-1. A UV- lter and a protective graphene oxide (GO) layer were employed seeking to improve the stability of OSCs. The combination of both UV- lter and GO protective layer was shown to be the most e ective way to improve the stability of these devices
Um dos maiores desa os do nosso tempo e desenvolver formas para fornecer energia de forma sustent avel para atender uma demanda que cresce exponencialmente e que dever a crescer 56% at e 2040. Neste contexto, o uso de fontes limpas e sustent aveis de energia e um imperativo. Entre essas fontes, a energia solar e a unico que pode satisfazer a ne- cessidade total de energia do mundo, mesmo considerando o crescimento na demanda. A pot^encia solar incidente na superf cie da Terra a cada segundo e equivalente a 4 trilh~oes de l^ampadas de 100 watts. C elulas solares fotovoltaicas s~ao uma das v arias maneiras de aproveitar a energia solar, convertendo-a diretamente em eletricidade. Dispositivos com- erciais fotovoltaicos j a s~ao uma realidade, mas a sua participa c~ao na matriz energ etica mundial ainda e muito pequena, principalmente devido aos seus custos elevados. C elulas fotovoltaicas de nova gera c~ao abrem uma s erie de novas possibilidades para aplica c~oes de energia fotovoltaica que pode diminuir o custo total de produ c~ao de energia. Oxidos semicondutores de metais de transi c~ao s~ao materiais promissores que podem ser produzi- dos atrav es de m etodos de baixo custo e que possuem caracter sticas interessantes. Por conseguinte, o uso destes materiais em energia fotovoltaica de pr oxima gera c~ao se apre- senta com uma aplica c~ao promissora. Nesta tese de doutorado oxidos de zinco, tit^anio e van adio foram utilizados em c elulas solares de pr oxima gera c~ao. Filmes nos de oxido de zinco foram sintetizados por eletrodeposi c~ao e s ntese hidrot ermica. Os lmes foram apli- cados como eletrodos de trabalho em c elulas solares sensibilizadas por corante (DSSCS) altamente e cientes. Os lmes foram caracterizados por t ecnicas estruturais e oticas en- quanto que as c elulas foram testadas por medidas de corrente vs: voltagem e de e ci^encia qu^antica. A e ci^encia dessas c elulas atingiu 2,27% utilizando lmes nos de ZnO sem qualquer tratamento p os-deposi c~ao. Al em disso, corantes naturais extra dos de plan- tas do nordeste do Brasil foram aplicados como sensibilizadores em DSSCs montadas com TiO 2 comercial utilizado como eletrodo de trabalho. Os corantes naturais foram extra das empregando m etodos simples e foram caracterizados por espectroscopia de fotoel etrons excitados por raios X e por radia c~ao ultravioleta, XPS e UPS respectivamente. Seus alin- hamentos de banda se mostraram compat veis com o TiO 2 e com o eletrodo de regenera c~ao. A e ci^encia das DSSCs sensibilizadas com corantes naturais chegou a 1,33%. Finalmente, V 2 O 5 a base de agua foi usado como material transportador de buracos (HTM) em c elulas solares org^anicas (OSCs) convencionais e OSCs de pl astico constru das sem ITO. Os re- sultados obtidos com V 2 O 5 foram comparados com os resultados de c elulas constru das com PEDOT:PSS, que e o HTM mais utilizado. Esta compara c~ao revelou que o uso de V 2 O 5 como HTM pode levar a OSCs mais e cientes. A estabilidade destes dispositivos foi avaliada por testes aplicando os padr~oes ISOS-D-1, ISOS-L-1 e ISOS-O-1. O uso de ltros ultravioleta e de uma camada protetora de oxido de grafeno reduzido foi testado com o intuito de melhorar a estabilidade desses dispositivos. O uso de uma combina c~ao de ambos se mostrou a forma mais efetiva de melhorar a estabilidade das OSCs
Chen, Xinyi, et 陈辛夷. « Wide band-gap nanostructure based devices ». Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2012. http://hub.hku.hk/bib/B49799290.
Texte intégralpublished_or_final_version
Physics
Doctoral
Doctor of Philosophy
Hansson, (f d. Wadeasa) Amal. « Heterojunctions between zinc oxide nanostructures and organic semiconductor ». Doctoral thesis, Linköpings universitet, Fysik och elektroteknik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71843.
Texte intégralThe series number "1504" is incorrect and is changed in the electronic version to the correct number "1405".
González, Zalba Miguel Fernando. « Single donor detection in silicon nanostructures ». Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.608181.
Texte intégralKhunou, Ramotseng. « Gas sensing properties of Ceo2 nanostructures ». University of the Western Cape, 2020. http://hdl.handle.net/11394/7909.
Texte intégralThe industrial safety requirements and environmental pollution have created a high demand to develop gas sensors to monitor combustible and toxic gases. As per specifications of World Health Organization (WHO) and Occupational Safety and Health Administration (OSHA), lengthy exposure to these gases lead to death which can be avoided with early detection. Semiconductor metal oxide (SMO) has been utilized as sensor for several decades. In recent years, there have been extensive investigations of nanoscale semiconductor gas sensor.
Livres sur le sujet "Nanostructured Oxide Semiconductors"
Teherani, Ferechteh Hosseini. Oxide-based materials and devices : 24-27 January 2010, San Francisco, California, United States. Bellingham, WA : SPIE, 2010.
Trouver le texte intégralJ, Rogers David, Ferechteh Hosseini Teherani et D. C. Look. Oxide-based materials and devices III : 22-25 January 2012, San Francisco, California, United States. Sous la direction de SPIE (Society). Bellingham, Wash : SPIE, 2012.
Trouver le texte intégralC, Jagadish, et Pearton S. J, dir. Zinc oxide bulk, thin films and nanostructures : Processing, properties and applications. Amsterdam : Elsevier, 2006.
Trouver le texte intégralTsu-Jae, King, Materials Research Society Meeting et Symposium on CMOS Front-End Materials and Process Technology (2003 : San Francisco, Calif.), dir. CMOS front-end materials and process technology : Symposium held April 22-24, 2003, San Francisco, California, U.S.A. Warrendale, Pa : Materials Research Society, 2003.
Trouver le texte intégralI, Gardner Mark, et Materials Research Society, dir. Novel materials and processes for advanced CMOS : Symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A. Warrendale, Pa : Materials Research Society, 2003.
Trouver le texte intégralSudipta, Seal, Materials Research Society Meeting et Symposium on Semiconductor Materials for Sensing (2004 : Boston, Mass.), dir. Semiconductor materials for sensing : Symposium held November 29-December 2, 2004, Boston, Massachusetts, U.S.A. Warrendale, Pa : Materials Research Society, 2005.
Trouver le texte intégralCMOS nanoelectronics : Analog and RF VLSI circuits. New York : McGraw-Hill, 2011.
Trouver le texte intégralNano-semiconductors : Devices and technology. Boca Raton, FL : CRC Press, 2012.
Trouver le texte intégralNano-CMOS gate dielectric engineering. Boca Raton : CRC Press, 2012.
Trouver le texte intégralInternational, Symposium on Advanced Materials (11th 2009 Islamabad Pakistan), et International Symposium on Technology Evolution for Silicon Nano-Electronics (2010 Tokyo Institute of Technology). Advanced materials XI : Selected, peer reviewed papers from the 11th International Symposium on Advanced Materials, 08-12 August, 2009, Islamabad, Pakistan. Stafa-Zurich, Switzerland : Trans Tech Publications, 2010.
Trouver le texte intégralChapitres de livres sur le sujet "Nanostructured Oxide Semiconductors"
Valeev, Rishat G., Alexander V. Vakhrushev, Aleksey Yu Fedotov et Dmitrii I. Petukhov. « Porous Anodic Aluminum Oxide : Structure, Properties, and Application in Semiconductor Technology ». Dans Nanostructured Semiconductors in Porous Alumina Matrices, 19–36. Includes bibliographical references and index. : Apple Academic Press, 2019. http://dx.doi.org/10.1201/9780429398148-2.
Texte intégralValeev, Rishat G., Alexander V. Vakhrushev, Aleksey Yu Fedotov et Dmitrii I. Petukhov. « Results of Modeling the Deposition Processes of Nanofilms onto Aluminum Oxide Templates ». Dans Nanostructured Semiconductors in Porous Alumina Matrices, 205–45. Includes bibliographical references and index. : Apple Academic Press, 2019. http://dx.doi.org/10.1201/9780429398148-10.
Texte intégralValeev, Rishat G., Alexander V. Vakhrushev, Aleksey Yu Fedotov et Dmitrii I. Petukhov. « Theoretical Models for Investigating The Processes of Nanofilm Deposition onto Porous Templates of Aluminum Oxide ». Dans Nanostructured Semiconductors in Porous Alumina Matrices, 85–140. Includes bibliographical references and index. : Apple Academic Press, 2019. http://dx.doi.org/10.1201/9780429398148-6.
Texte intégralJanotti, A., J. B. Varley, J. L. Lyons et C. G. Van de Walle. « Controlling the Conductivity in Oxide Semiconductors ». Dans Functional Metal Oxide Nanostructures, 23–35. New York, NY : Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9931-3_2.
Texte intégralLee, S. H. « ZnO and GaN Nanostructures and their Applications ». Dans Oxide and Nitride Semiconductors, 459–505. Berlin, Heidelberg : Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-540-88847-5_10.
Texte intégralVeal, T. D., P. D. C. King et C. F. McConville. « Electronic Properties of Post-transition Metal Oxide Semiconductor Surfaces ». Dans Functional Metal Oxide Nanostructures, 127–45. New York, NY : Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9931-3_6.
Texte intégralGupta, Nidhi, Omita Nanda, Pramod Kumar, V. K. Jain et Kanchan Saxena. « Synthesis of Zinc Oxide Nanostructures by Chemical Routes ». Dans Physics of Semiconductor Devices, 641–43. Cham : Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_163.
Texte intégralSauer, Rolf, et Klaus Thonke. « Donor-Related Exciton Luminescence in Wide-Bandgap Semiconductors : Diamond, Zinc Oxide, and Gallium Nitride ». Dans Optics of Semiconductors and Their Nanostructures, 73–106. Berlin, Heidelberg : Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09115-9_4.
Texte intégralAndreu, Teresa, Jordi Arbiol, Andreu Cabot, Albert Cirera, Joan Daniel Prades, Francisco Hernandez-Ramírez, Albert Romano-Rodríguez et Joan R. Morante. « Nanosensors : Controlling Transduction Mechanisms at the Nanoscale Using Metal Oxides and Semiconductors ». Dans Sensors Based on Nanostructured Materials, 1–51. Boston, MA : Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-77753-5_5.
Texte intégralMagdaluyo, Eduardo R., Ian Harvey J. Arellano, Alvin Karlo G. Tapia, Roland V. Samargo et Leon M. Payawan. « Photoluminescence and Fractal Properties of Diverse Carbothermal Zinc Oxide Nanostructures ». Dans Semiconductor Photonics : Nano-Structured Materials and Devices, 92–94. Stafa : Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.92.
Texte intégralActes de conférences sur le sujet "Nanostructured Oxide Semiconductors"
Ivanov, Denis, Ilya Marinov, Yuriy Gorbachev, Alexander Smirnov et Valeria Krzhizhanovskaya. « Computer Simulation of Laser Annealing of a Nanostructured Surface ». Dans ASME 2009 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/detc2009-87087.
Texte intégralGwo, Shangjr. « Metal-oxide-semiconductor plasmonic nanorod lasers (Conference Presentation) ». Dans Quantum Dots and Nanostructures : Growth, Characterization, and Modeling XIV, sous la direction de Diana L. Huffaker et Holger Eisele. SPIE, 2017. http://dx.doi.org/10.1117/12.2257098.
Texte intégralYu, Jae Su, et Yeong Hwan Ko. « Metal-oxide semiconductor nanostructures for energy and sensing applications ». Dans SPIE OPTO, sous la direction de Ferechteh H. Teherani, David C. Look et David J. Rogers. SPIE, 2014. http://dx.doi.org/10.1117/12.2041847.
Texte intégralChung, Peng-Fei, Ting-Wien Su, Ching-Fuh Lin, Miin-Jang Chen et Wei-Fang Su. « Nanostructured metal-oxide semiconductor devices for efficient band-edge electroluminescence ». Dans Symposium on Integrated Optoelectronic Devices, sous la direction de David J. Robbins et Ghassan E. Jabbour. SPIE, 2002. http://dx.doi.org/10.1117/12.463847.
Texte intégralShishiyanu, T., S. Shishiyanu, O. Lupan, V. Sontea et A. Bragorenco. « Novel Zinc Oxide Nanostructured thin Films for Volatile Organic Compaunds Gas Sensors ». Dans 2006 International Semiconductor Conference. IEEE, 2006. http://dx.doi.org/10.1109/smicnd.2006.283968.
Texte intégralLiu, Lei, Derek Waldron, Vladimir Timochevski et Hong Guo. « Automistic modeling of direct tunnelling in metal-oxide-semiconductor nanostructures ». Dans 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306200.
Texte intégralPIQUERAS, J., A. CREMADES, P. FERNÁNDEZ, J. GRYM, D. MAESTRE, B. MÉNDEZ et E. NOGALES. « GROWTH AND LUMINESCENCE OF ELONGATED MICRO- AND NANOSTRUCTURES OF OXIDE SEMICONDUCTORS ». Dans Reviews and Short Notes to Nanomeeting-2005. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701947_0106.
Texte intégralLupan, Oleg, Vasilii Cretu, Victor Sontea, Serghei Railean, Lidia Ghimpu, Ion Tiginyanu, Yauheni Rudzevich, Yuqing Lin et Lee Chow. « Copper doped zinc oxide micro- and nanostructures for room-temperature sensorial applications ». Dans 2013 International Semiconductor Conference (CAS 2013). IEEE, 2013. http://dx.doi.org/10.1109/smicnd.2013.6688082.
Texte intégralLaha, Apurba, E. Bugiel, R. Ranjith, H. J. Osten, Andreas Fissel, V. V. Afanas'ev et M. Badylevich. « Semiconductor nanostructures in crystalline rare earth oxide for nanoelectronic device applications ». Dans 2010 International Conference on Microelectronics (ICM). IEEE, 2010. http://dx.doi.org/10.1109/icm.2010.5696129.
Texte intégralBaraneedharan, P., et J. Manikandan. « Metal Oxide Semiconductor Nanostructures Surface Properties for Gas Sensing – A Review ». Dans 2022 Sixth International Conference on I-SMAC (IoT in Social, Mobile, Analytics and Cloud) (I-SMAC). IEEE, 2022. http://dx.doi.org/10.1109/i-smac55078.2022.9986495.
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