Littérature scientifique sur le sujet « Monte-Charge »
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Articles de revues sur le sujet "Monte-Charge"
Wang, Xidi, et George A. Baker. « Monte carlo calculations of the conformal charge ». Journal of Statistical Physics 69, no 5-6 (décembre 1992) : 1069–95. http://dx.doi.org/10.1007/bf01058762.
Texte intégralYu, Unjong, Hoseung Jang et Chi-Ok Hwang. « A diffusion Monte Carlo method for charge density on a conducting surface at non-constant potentials ». Monte Carlo Methods and Applications 27, no 4 (28 octobre 2021) : 315–24. http://dx.doi.org/10.1515/mcma-2021-2098.
Texte intégralBudrin, K. S., Yu D. Panov, A. S. Moskvin et A. A. Chikov. « Unconventional phase separation in the model 2D spin-pseudospin system ». EPJ Web of Conferences 185 (2018) : 11006. http://dx.doi.org/10.1051/epjconf/201818511006.
Texte intégralKim, J. S., C. Liu, D. H. Edgell et R. Pardo. « Monte Carlo beam capture and charge breeding simulation ». Review of Scientific Instruments 77, no 3 (mars 2006) : 03B106. http://dx.doi.org/10.1063/1.2170105.
Texte intégralAkeyoshi, Tomoyuki, Koichi Maezawa, Masaaki Tomizawa et Takashi Mizutani. « Monte Carlo Study of Charge Injection Transistors (CHINTs) ». Japanese Journal of Applied Physics 32, Part 1, No. 1A (15 janvier 1993) : 26–30. http://dx.doi.org/10.1143/jjap.32.26.
Texte intégralZiaeian, Iman, et Károly Tőkési. « nl-Selective Classical Charge-Exchange Cross Sections in Be4+ and Ground State Hydrogen Atom Collisions ». Atoms 10, no 3 (9 septembre 2022) : 90. http://dx.doi.org/10.3390/atoms10030090.
Texte intégralNicolis, Nikolaos George, et Athanasios Chatzikotelis. « Development of a simple algorithm for pre-fragment formation in proton-nucleus spallation reactions ». HNPS Advances in Nuclear Physics 29 (5 mai 2023) : 196–99. http://dx.doi.org/10.12681/hnpsanp.5084.
Texte intégralIllescas, Clara, Luis Méndez, Santiago Bernedo et Ismanuel Rabadán. « Charge Transfer and Electron Production in Proton Collisions with Uracil : A Classical and Semiclassical Study ». International Journal of Molecular Sciences 24, no 3 (21 janvier 2023) : 2172. http://dx.doi.org/10.3390/ijms24032172.
Texte intégralBuscemi, Fabrizio, Enrico Piccinini, Rossella Brunetti, Massimo Rudan et Carlo Jacoboni. « Monte Carlo simulation of charge transport in amorphous chalcogenides ». Journal of Applied Physics 106, no 10 (15 novembre 2009) : 103706. http://dx.doi.org/10.1063/1.3259421.
Texte intégralJakobsson, Mattias, et Sven Stafström. « A Monte Carlo study of charge transfer in DNA ». Journal of Chemical Physics 129, no 12 (28 septembre 2008) : 125102. http://dx.doi.org/10.1063/1.2981803.
Texte intégralThèses sur le sujet "Monte-Charge"
Aung, Pyie Phyo. « Monte Carlo Simulations of charge Transport in Organic Semiconductors ». University of Akron / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=akron1418272111.
Texte intégralJakobsson, Mattias. « Monte Carlo Studies of Charge Transport Below the Mobility Edge ». Doctoral thesis, Linköpings universitet, Beräkningsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-74322.
Texte intégralKrapohl, David. « Monte Carlo and Charge Transport Simulation of Pixel Detector Systems ». Doctoral thesis, Mittuniversitetet, Avdelningen för elektronikkonstruktion, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-24763.
Texte intégralCoco, Marco. « Monte Carlo study of charge and phonon transport in graphene ». Doctoral thesis, Università di Catania, 2017. http://hdl.handle.net/10761/3811.
Texte intégralVolpi, Riccardo. « Charge Transport Simulations for Organic Electronics : A Kinetic Monte Carlo Approach ». Licentiate thesis, Linköpings universitet, Teoretisk kemi, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-122991.
Texte intégralGonçalves, Thomas. « Contributions à la parallélisation de méthodes de type transport Monte-Carlo ». Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAM047/document.
Texte intégralMonte Carlo particle transport applications consist in studying the behaviour of particles moving about a simulation domain. Particles distribution among simulation domains is not uniform and change dynamically during simulation. The parallelization of this kind of applications on massively parallel architectures leads to solve a complex issue of workloads and data balancing among numerous compute cores.We started by identifying parallelization pitfalls of Monte Carlo particle transport applications using theoretical and experimental analysis of reference parallelization methods. A semi-dynamic based on partitioning techniques has been proposed then. Finally, we defined a dynamic approach able to redistribute workloads and data keeping a low communication volume. The dynamic approach obtains speedups using strong scaling and a memory footprint reduction compared to the perfectly balanced domain replication method
Hjelm, Mats. « Monte Carlo Simulations of Homogeneous and Inhomogeneous Transport in Silicon Carbide ». Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3700.
Texte intégralThe importance of simulation is increasing in the researchon semiconductor devices and materials. Simulations are used toexplore the characteristics of novel devices as well asproperties of the semiconductor materials that are underinvestigation, i.e. generally materials where the knowledge isinsufficient. A wide range of simulation methods exists, andthe method used in each case is selected according to therequirements of the work performed. For simulations of newsemiconductor materials, extremely small devices, or deviceswhere non-equilibrium transport is important, the Monte Carlo(MC) method is advantageous, since it can directly exploit themodels of the important physical processes in the device.
One of the semiconductors that have attracted a lot ofattraction during the last decade is silicon carbide (SiC),which exists in a large number of polytypes, among which3C-SiC, 4H-SiC and 6H-SiC are most important. Although SiC hasbeen known for a very long time, it may be considered as a newmaterial due to the relatively small knowledge of the materialproperties. This dissertation is based on a number of MCstudies of both the intrinsic properties of different SiCpolytypes and the qualities of devices fabricated by thesepolytypes. In order to perform these studies a new full-bandensemble device MC simulator, the General Monte CarloSemiconductor (GEMS) simulator was developed. Algorithmsimplemented in the GEMS simulator, necessary when allmaterial-dependent data are numerical, and for the efficientsimulation of a large number of charge carriers in high-dopedareas, are also presented. In addition to the purely MC-relatedstudies, a comparison is made between the MC, drift-diffusion,and energy-balance methods for simulation of verticalMESFETs.
The bulk transport properties of electrons in 2H-, 3C-, 4H-and 6H-SiC are studied. For high electric fields the driftvelocity, and carrier mean energy are presented as functions ofthe field. For 4H-SiC impact-ionization coefficients,calculated with a detailed quantum-mechanical model ofband-to-band tunneling, are presented. Additionally, a study oflow-field mobility in 4H-SiC is presented, where the importanceof considering the neutral impurity scattering, also at roomtemperature, is pointed out.
The properties of 4H- and 6H-SiC when used in short-channelMOSFETs, assuming a high quality semiconductor-insulatorinterface, are investigated using a simple model for scatteringin the semiconductor-insulator interface. Furthermore, theeffect is studied on the low and high-field surface mobility,of the steps formed by the common off-axis-normal cutting ofthe 4H- and 6H-SiC crystals. In this study an extension of theprevious-mentioned simple model is used.
Islam, Sharnali. « ATOMISTIC MODELING OF UNINTENTIONAL SINGLE CHARGE EFFECTS IN NANOSCALE FETS ». OpenSIUC, 2010. https://opensiuc.lib.siu.edu/theses/209.
Texte intégralGali, Sai Manoj. « Modélisation des relations structure / propriétés de transport de charge dans les matériaux pour l'électronique organique ». Thesis, Bordeaux, 2017. http://www.theses.fr/2017BORD0693/document.
Texte intégralWith the advancement of technology, miniaturized electronic devices are progressively integrated into our everyday lives, generating concerns about cost, efficiency and environmental impact of electronic waste. Organic electronics offers a tangible solution paving the way for low-cost, flexible, transparent and environment friendly devices. However, improving the functionalities of organic (opto) electronic devices such as light emitting diodes and photovoltaics still poses technological challenges due to factors like low efficiencies, performance stability, flexibility etc. Although more and more organic materials are being developed to meet these challenges, one of the fundamental concerns still arises from the lack of established protocols that correlate the inherent properties of organic materials like the chemical structure, molecular conformation, supra-molecular arrangement to their resulting charge-transport characteristics.In this context, this thesis addresses the prediction of charge transport properties of organic semiconductors through theoretical and computational studies at the atomistic scale, developed along three main axes :(I) Structure-charge transport relationships of crystalline organic materials and the role of energetic fluctuations in amorphous polymeric organic semiconductors. Kinetic Monte-Carlo (KMC) studies employing the Marcus-Levich-Jortner rate formalism are performed on ten crystalline Group IV phthalocyanine derivatives and trends linking the crystalline arrangement to the anisotropic mobility of electrons and holes are obtained. Subsequently, KMC simulations based on the simpler Marcus formalism are performed on an amorphous semiconducting fluorene-triphenylamine (TFB) copolymer, to highlight the impact of energetic fluctuations on charge transport characteristics. A methodology is proposed to include these fluctuations towards providing a semi-quantitative estimate of charge-carrier mobilities at reduced computational cost.(II) Impact of a mechanical strain on the electronic and charge transport properties of crystalline organic materials. Crystalline rubrene and its polymorphs, as well as BTBT derivatives (well studied high mobility organic materials) are subjected to mechanical strain and their electronic response is analyzed. Employing tools like Molecular Dynamic (MD) simulations and plane wave DFT (PW-DFT) calculations, unusual electro-mechanical coupling between different crystallographic axes is demonstrated, highlighting the role of inherent anisotropy that is present in the organic single crystals which translates in an anisotropy of their electro-mechanical coupling.(III) Protonation-dependent conformation of polyelectrolyte and its role in governing the conductivity of polymeric conducting complexes. Polymeric bis(sulfonyl)imide substituted polystyrenes are currently employed as counter-ions and dopants for conducting poly(3,4-ethylenedioxythiophene) (PEDOT), resulting in PEDOT-polyelectrolyte conducting complexes. Employing MD simulations and DFT calculations, inherent characteristics of the polyelectrolyte like its acid-base behavior, protonation state and conformation, are analyzed in conjunction with available experimental data and the role of these characteristics in modulating the conductivity of resulting PEDOT-polyelectrolyte conducting complexes is highlighted.The above studies, performed on different organic electronic systems, emphasize the importance of inherent characteristics of organic materials in governing the charge transport behavior in these materials. By considering the inherent characteristics of organic electronic materials and systematically incorporating them into simulation models, accuracy of simulation predictions can be greatly improved, thereby serving not only as a tool to design new, stable and high performance organic materials but also for optimizing device performances
Renoud, Raphaël. « Simulation par la méthode de Monte-Carlo de la charge d'un isolant soumis au bombardement d'un faisceau électronique focalisé ». Lyon 1, 1995. http://www.theses.fr/1995LYO10029.
Texte intégralLivres sur le sujet "Monte-Charge"
Margat, Claude. Le monte-charge : Roman. Paris : Ecriture, 1992.
Trouver le texte intégralHe, Qiaozhi. Dian ti gu zhang yu pai chu. Beijing Shi : Ji xie gong ye chu ban she, 2002.
Trouver le texte intégral-, Keraval Gwen 19, dir. Réveillon en sous-sol. Paris : Magnard jeunesse, 2003.
Trouver le texte intégralDaniel, Dumont, dir. Jonas dans l'ascenseur. Saint-Lambert, Québec : Héritage, 1995.
Trouver le texte intégralSchwab, Adolf J. Field Theory Concepts : Electromagnetic Fields Maxwell's Equations grad, curl, div. etc. Finite-Element Method Finite-Difference Method Charge Simulation Method Monte Carlo Method. Berlin, Heidelberg : Springer Berlin Heidelberg, 1988.
Trouver le texte intégralField theory concepts : Electromagnetic fields, Maxwell's equations, grad, curl, div, etc. : finite-element method, finite-difference method, charge simulation method, Monte Carlo method. Berlin : Springer-Verlag, 1988.
Trouver le texte intégralOntario Elevator Safety Task Force. Final report of the Ontario Elevator Safety Task Force = : Rapport final du Groupe de travail sur la sécurité des ascenseurs de l'Ontario. Toronto, Ont : Ontario Elevator Safety Task Force = Groupe de travail sur la sécurité des ascenseurs de l'Ontario, 1989.
Trouver le texte intégralOntario Elevator Safety Task Force. Final report of the Ontario Elevator Safety Task Force = : Rapport final du Groupe de travail sur la sécurité des ascenseurs de l'Ontario. [Toronto?] : The Task Force, 1989.
Trouver le texte intégralThe elevator family. New York : Scholastic, 2004.
Trouver le texte intégralUnited States. National Aeronautics and Space Administration., dir. A study of a multi-pinned phase CCD detector for use as a star tracker : Final report, July 21, 1994. [Washington, DC : National Aeronautics and Space Administration, 1994.
Trouver le texte intégralChapitres de livres sur le sujet "Monte-Charge"
Kosina, H., M. Nedjalkov et S. Selberherr. « Monte Carlo Analysis of the Small-Signal Response of Charge Carriers ». Dans Large-Scale Scientific Computing, 175–82. Berlin, Heidelberg : Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/3-540-45346-6_17.
Texte intégralKoch, Erik, Olle Gunnarsson et Richard M. Martin. « Screening of a Point Charge : A Fixed-Node Diffusion Monte Carlo Study ». Dans Springer Proceedings in Physics, 22–36. Berlin, Heidelberg : Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-642-59689-6_3.
Texte intégralMuscato, O. « Monte Carlo Verification of an Extended Hydrodynamic Model Describing Charge Carrier Transport in Semiconductors ». Dans Progress in Industrial Mathematics at ECMI 2000, 179–84. Berlin, Heidelberg : Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-662-04784-2_23.
Texte intégralRahmani-Andebili, Mehdi. « Estimating the State of Charge of Plug-In Electric Vehicle Fleet Applying Monte Carlo Markov Chain ». Dans Planning and Operation of Plug-In Electric Vehicles, 211–37. Cham : Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-18022-5_7.
Texte intégralWang, Jianxin, Tiejun Li, Hua Zhang, Jiatao Zhang, Zhuo Chen, Dan Wang et Lijun Wang. « Particle-In-Cell/Monte Carlo Collisional Simulation of Space Charge Layer Formation and Development in Nitrogen Negative Streamers ». Dans Lecture Notes in Electrical Engineering, 147–54. Singapore : Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-7393-4_14.
Texte intégralIshizuka, Hiroaki. « Benchmark of the Polynomial Expansion Monte Carlo Method ». Dans Magnetism and Transport Phenomena in Spin-Charge Coupled Systems on Frustrated Lattices, 115–26. Tokyo : Springer Japan, 2015. http://dx.doi.org/10.1007/978-4-431-55663-3_9.
Texte intégralGubernatis, J. E. « The Spatial Dependence of Spin and Charge Correlations in a One-Dimensional, Single Impurity, Anderson Model ». Dans Quantum Monte Carlo Methods in Equilibrium and Nonequilibrium Systems, 216–25. Berlin, Heidelberg : Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83154-6_21.
Texte intégralDestandau, Alain, et Bétina Schneeberger. « Théâtre Monte-Charge et Théâtre Tuong Viet Nam ». Dans Théâtres français et vietnamien, 151–58. Presses universitaires de Provence, 2014. http://dx.doi.org/10.4000/books.pup.9273.
Texte intégralJoy, David C. « Charge Collection Microscopy and Cathodoluminescence ». Dans Monte Carlo Modeling for Electron Microscopy and Microanalysis, 114–33. Oxford University PressNew York, NY, 1995. http://dx.doi.org/10.1093/oso/9780195088748.003.0007.
Texte intégralChandra Sahu, Bharat. « Organic Corrosion Inhibitors ». Dans Introduction to Corrosion - Basics and Advances [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.109523.
Texte intégralActes de conférences sur le sujet "Monte-Charge"
Gallagher, Dennis J., Raymond Demara, Gary Emerson, Wayne W. Frame et Alan W. Delamere. « Monte Carlo model for describing charge transfer in irradiated CCDs ». Dans Photonics West '98 Electronic Imaging, sous la direction de Morley M. Blouke. SPIE, 1998. http://dx.doi.org/10.1117/12.304563.
Texte intégralRengel, Raul, Jose M. Iglesias, Elena Pascual et Maria J. Martin. « Monte Carlo modeling of mobility and microscopic charge transport in supported graphene ». Dans 2015 10th Spanish Conference on Electron Devices (CDE). IEEE, 2015. http://dx.doi.org/10.1109/cde.2015.7087445.
Texte intégralNovikov, Sergey V., et Anatoly V. Vannikov. « Monte Carlo simulation of charge carrier transport in locally ordered dipolar matrices ». Dans Optical Science, Engineering and Instrumentation '97, sous la direction de Stephen Ducharme et James W. Stasiak. SPIE, 1997. http://dx.doi.org/10.1117/12.290231.
Texte intégralMaqsood, Ishtiaq, Lance D. Cundy, Matt Biesecker, Jung-Han Kimn, Elise Darlington, Ethan P. Hettwer, Sabina Schill et Venkat Bommisetty. « Charge transport kinetics in organic bulk heterojunction morphologies : Mesoscale Monte Carlo simulation analysis ». Dans 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925261.
Texte intégralWang, Zhenwei, Xiaomin Zhu et Qian Pu. « Siting public charge stations for taxis in Beijing based on Monte Carlo simulation ». Dans 2016 International Conference on Logistics, Informatics and Service Sciences (LISS). IEEE, 2016. http://dx.doi.org/10.1109/liss.2016.7854403.
Texte intégralIngrosso, G., L. Selmi et E. Sangiorgi. « Monte Carlo Simulation of Program and Erase Charge Distributions in NROM(TM) Devices ». Dans 32nd European Solid-State Device Research Conference. IEEE, 2002. http://dx.doi.org/10.1109/essderc.2002.194901.
Texte intégralPasmore, Tom A., J. Daniel Harper, Julian Talbot et Hilary S. Lackritz. « Monte Carlo Simulations of Charge Transport in Polymers for Second Order Nonlinear Optics ». Dans Organic Thin Films for Photonic Applications. Washington, D.C. : Optica Publishing Group, 1993. http://dx.doi.org/10.1364/otfa.1993.wd.10.
Texte intégralHe, Xingxi, et Donald J. Leo. « Monte-Carlo Simulation of Ion Transport at the Polymer-Metal Interface ». Dans ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-79765.
Texte intégralSong, Yucheng, Zhiliang Xia, Jinfeng Yang, Gang Du, Jinfeng Kang, Ruqi Han et Xiaoyan Liu. « Simulation of flash memory including charge trapping and de-trapping by Monte Carlo method ». Dans 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306482.
Texte intégral« Kinetic Equation Method and Monte Carlo Method for Charge Carriers Dynamics Description in Diamond ». Dans International Conference on Photonics, Optics and Laser Technology. SCITEPRESS - Science and and Technology Publications, 2014. http://dx.doi.org/10.5220/0004809801220126.
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