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Articles de revues sur le sujet « MIS devices »

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Auteur : Grafiati
Publié le 26 juillet 2024

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1

Hawasli, Ammar H., Jawad M. Khalifeh, Ajay Chatrath, Chester K. Yarbrough et Wilson Z. Ray. « Minimally invasive transforaminal lumbar interbody fusion with expandable versus static interbody devices : radiographic assessment of sagittal segmental and pelvic parameters ». Neurosurgical Focus 43, no 2 (août 2017) : E10. http://dx.doi.org/10.3171/2017.5.focus17197.

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OBJECTIVEMinimally invasive transforaminal lumbar interbody fusion (MIS-TLIF) has been adopted as an alternative technique to hasten recovery and minimize postoperative morbidity. Advances in instrumentation technologies and operative techniques have evolved to maximize patient outcomes as well as radiographic results. The development of expandable interbody devices allows a surgeon to perform MIS-TLIF with minimal tissue disruption. However, sagittal segmental and pelvic radiographic outcomes after MIS-TLIF with expandable interbody devices are not well characterized. The object of this study is to evaluate the radiographic sagittal lumbar segmental and pelvic parameter outcomes of MIS-TLIF performed using an expandable interbody device.METHODSA retrospective review of MIS-TLIFs performed between 2014 and 2016 at a high-volume center was performed. Radiographic measurements were performed on lateral radiographs before and after MIS-TLIF with static or expandable interbody devices. Radiographic measurements included disc height, foraminal height, fused disc angle, lumbar lordosis, pelvic incidence, sacral slope, and pelvic tilt. Mismatch between pelvic incidence and lumbar lordosis were calculated for each radiograph.RESULTSA total of 48 MIS-TLIFs were performed, predominantly at the L4–5 level, in 44 patients. MIS-TLIF with an expandable interbody device led to a greater and more sustained increase in disc height when compared with static interbody devices. Foraminal height increased after MIS-TLIF with expandable but not with static interbody devices. MIS-TLIF with expandable interbody devices increased index-level segmental lordosis more than with static interbody devices. The increase in segmental lordosis was sustained in the patients with expandable interbody devices but not in patients with static interbody devices. For patients with a collapsed disc space, MIS-TLIF with an expandable interbody device provided superior and longer-lasting increases in disc height, foraminal height, and index-level segmental lordosis than in comparison with patients with static interbody devices. Using an expandable interbody device improved the Oswestry Disability Index scores more than using a static interbody device, and both disc height and segmental lordosis were correlated with improved clinical outcome. Lumbar MIS-TLIF with expandable or static interbody devices had no effect on overall lumbar lordosis, pelvic parameters, or pelvic incidence–lumbar lordosis mismatch.CONCLUSIONSPerforming MIS-TLIF with an expandable interbody device led to a greater and longer-lasting restoration of disc height, foraminal height, and index-level segmental lordosis than MIS-TLIF with a static interbody device, especially for patients with a collapsed disc space. However, neither technique had any effect on radiographic pelvic parameters.
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Al-Begg, S. M., S. H. Saeed et A. S. Al-Rawas. « Thermal annealing effects on the electrical characteristics of alpha particles irradiated MIS device AuTa2O5GaAs ». Journal of Ovonic Research 19, no 4 (juillet 2023) : 359–67. http://dx.doi.org/10.15251/jor.2023.194.359.

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An alpha particle-irradiated MIS device made of AuTa2O5GaAs was used to study how thermal annealing affects the I-V characteristics and how the current changes with annealing temperature, radiation energy, and voltage biassing. The super-gate of the MIS structure was made by using thermal evaporation to build a 1000°A thick layer of gold under a vacuum of about 10-5 torr. At room temperature, the devices were exposed to alpha particles from the radioactive source 226Ra (0.5 Ci) with energies of 5.1, 4, 3, 1.8, and 1.2 MeV for 0–30 minutes. After 30 minutes of annealing at 150, 200, and 300 o C in a vacuum of 10-3 torr, the current-voltage (I-V) characteristics of the irradiation devices were found. During thermal annealing, different results were seen with bias voltages of 0.4, 1, and 2 V and temperatures of 150, 200, and 300 o C. Annealing the device at 150 o C doesn't change how stable it is, but annealing it at 300 o C causes ohmic conduction in the device's properties. The device's current can be fixed best when the device is heated to 200 o C and then cooled. Also, thermal annealing seems to have different effects on the I–V electrical characteristics of the devices depending on the energy of the particles and the voltage biassing.
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Zhang, Xiaodong, Xing Wei, Peipei Zhang, Hui Zhang, Li Zhang, Xuguang Deng, Yaming Fan et al. « Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric ». Electronics 11, no 6 (13 mars 2022) : 895. http://dx.doi.org/10.3390/electronics11060895.

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This study has demonstrated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates with a SiNx/SiON composite gate dielectric. The threshold voltage shift in the devices was investigated. The MIS-HEMTs with the SiNx/SiON composite gate dielectric exhibited superior threshold voltage uniformity and small threshold voltage hysteresis than the reference device with SiNx only gate dielectric. The variation of the device threshold voltage was mainly related to trapping process by the interface states, as confirmed by band diagrams of MIS-HEMTs at different gate biases. Based on frequency-dependent capacitance measurements, interface state densities of the devices with the composite and single gate dielectrics were extracted, where the former showed much smaller interface state density. These results indicate that the SiNx/SiON composite gate dielectric can effectively improve the device performance of GaN-based MIS-HEMTs and contribute to the development of high-performance GaN electronic devices.
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Engstrom, O., et A. Carlsson-Gylemo. « MIS Devices for optical information processing ». IEEE Transactions on Electron Devices 32, no 11 (novembre 1985) : 2438–40. http://dx.doi.org/10.1109/t-ed.1985.22292.

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Moriwaki, M. M., J. R. Srour, L. F. Lou et J. R. Waterman. « Ionizing radiation effects on HgCdTe MIS devices ». IEEE Transactions on Nuclear Science 37, no 6 (1990) : 2034–41. http://dx.doi.org/10.1109/23.101226.

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Tardy, J., I. Thomas, P. Viktorovitch, M. Gendry, J. L. Perrossier, C. Santinelli, M. P. Besland, P. Louis et G. Post. « Long-term stability of InP MIS devices ». Applied Surface Science 50, no 1-4 (juin 1991) : 383–89. http://dx.doi.org/10.1016/0169-4332(91)90203-v.

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Hynecek, Jaroslav. « 4455739 Process protection for individual device gates on large area MIS devices ». Microelectronics Reliability 25, no 1 (janvier 1985) : 204. http://dx.doi.org/10.1016/0026-2714(85)90469-x.

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Preuveneers, D., et Y. Berbers. « Encoding Semantic Awareness in Resource-Constrained Devices ». IEEE Intelligent Systems 23, no 2 (mars 2008) : 26–33. http://dx.doi.org/10.1109/mis.2008.25.

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Ragusa, Edoardo, Christian Gianoglio, Rodolfo Zunino et Paolo Gastaldo. « Image Polarity Detection on Resource-Constrained Devices ». IEEE Intelligent Systems 35, no 6 (1 novembre 2020) : 50–57. http://dx.doi.org/10.1109/mis.2020.3011586.

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Hsu, Che-Ching, Pei-Chien Shen, Yi-Nan Zhong et Yue-Ming Hsin. « AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer ». MRS Advances 3, no 3 (28 décembre 2017) : 143–46. http://dx.doi.org/10.1557/adv.2017.626.

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ABSTRACTIn this study, AlGaN/GaN MIS-HEMTs with a p-GaN cap layer and ALD deposited Al2O3 gate insulator were fabricated. Devices with two different thicknesses of p-GaN cap layers were investigated and compared. AlGaN/GaN MIS-HEMT with an 8-nm p-GaN cap showed a better DC characteristics than device with a 5-nm p-GaN cap. The drain current of 662.9 mA/mm, a high on/off current ratio of 2.67×109 and a breakdown voltage of 672 V were measured in device with an 8-nm p-GaN cap. In addition, lateral leakage current was investigated by using adjacent MIS gate structures with a separation of 3 μm to investigate the leakage current.
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Alhalafi, Z. H., et Shashi Paul. « Switching in Polymer Memory Devices Based on Polymer and Nanoparticles Admixture ». Advances in Science and Technology 95 (octobre 2014) : 107–12. http://dx.doi.org/10.4028/www.scientific.net/ast.95.107.

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In this paper, a non-volatile memory device based on a blend of metal oxides (Known as NiO) and polymer has been investigated. These devices have shown to display memory effects; a marked difference in electrical conductivity between the ‘on’ and ‘off’ states. However, the exact mechanism under-pinning these two conductivities states are not very clear. The structures used in investigation are metal-admixture-metal (MAM) and metal-insulator-semiconductor (MIS) devices. Also, glass and p-types silicon (100 orientations) with a pre-prepared Ohmic back contact were used for the MAM and MIS substrates respectively. This work will address some of the questions in regard to the electrical bistability shown by polymer memory devices.
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Mabrook, Mohammed Fadhil, Daniel Kolb, Christopher Pearson, D. A. Zeze et M. C. Petty. « Fabrication and Characterisation of MIS Organic Memory Devices ». Advances in Science and Technology 54 (septembre 2008) : 474–79. http://dx.doi.org/10.4028/www.scientific.net/ast.54.474.

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There is a current upsurge in research on devices with nanoparticles embedded in dielectrics. Such structures can operate as memories with high speed, high density, low voltage and low cost. Here, we report on hybrid gold nanoparticle-based metal-insulator-semiconductor (MIS) memory devices combining silicon technology and organic thin film deposition. The nanoparticles are deposited using a self-assembly technique at room temperature onto a 4.5 nm thermal silicon oxide layer. A 40 nm thin film of pentacene (deposited by flash thermal evaporation), polymethylmethacrylate (spin coated) and cadmium arachidate (deposited using the Langmuir- Blodgett technique) are used as insulators. Distinct capacitance-voltage (C-V) hysteresis is observed with a memory window that increases linearly with increasing voltage programming range. Clockwise and anticlockwise hysteresis in devices based on p-type and n-type silicon, respectively are observed, indicating that charges are injected from the top electrode to the nanoparticles rather than tunnelling through the thin SiO2 layer. However, thermal growth of SiO2 at a temperature below 800 °C resulted in a hysteresis in the opposite direction. The detailed electrical behaviour of the MIS devices will be discussed.
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Zayats, Galina. « Modeling of Radiation Effects in the MIS Devices ». American Journal of Nano Research and Applications 5, no 1 (2017) : 7. http://dx.doi.org/10.11648/j.nano.20170501.12.

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Moriwaki, M. M., J. R. Srour et R. L. Strong. « Charge transport and trapping in HgCdTe MIS devices ». IEEE Transactions on Nuclear Science 39, no 6 (1992) : 2265–72. http://dx.doi.org/10.1109/23.211432.

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Yoo, Jae-Hoon, Won-Ji Park, So-Won Kim, Ga-Ram Lee, Jong-Hwan Kim, Joung-Ho Lee, Sae-Hoon Uhm et Hee-Chul Lee. « Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices ». Nanomaterials 13, no 11 (1 juin 2023) : 1785. http://dx.doi.org/10.3390/nano13111785.

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Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the corresponding device. In this study, we fabricated metal–insulator–semiconductor (MIS) structure capacitors using HfO2 thin films separately deposited by remote plasma (RP) atomic layer deposition (ALD) and direct-plasma (DP) ALD and determined the optimal process temperature by measuring the leakage current and breakdown strength as functions of process temperature. Additionally, we analyzed the effects of the plasma application method on the charge trapping properties of HfO2 thin films and properties of the interface between Si and HfO2. Subsequently, we synthesized charge-trapping memory (CTM) devices utilizing the deposited thin films as charge-trapping layers (CTLs) and evaluated their memory properties. The results indicated excellent memory window characteristics of the RP-HfO2 MIS capacitors compared to those of the DP-HfO2 MIS capacitors. Moreover, the memory characteristics of the RP-HfO2 CTM devices were outstanding as compared to those of the DP-HfO2 CTM devices. In conclusion, the methodology proposed herein can be useful for future implementations of multiple levels of charge-storage nonvolatile memories or synaptic devices that require many states.
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Lee, Chwan Ying, Yung Hsiang Chen, Lurng Shehng Lee, Chien Chung Hung, Cheng Tyng Yen, Suh Fang Lin, Rong Xuan, Wei Hung Kuo, Tzu Kun Ku et Ming Jinn Tsai. « Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues ». Materials Science Forum 717-720 (mai 2012) : 1303–6. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1303.

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One normally-on N-channel AlGaN/GaN device and two types of normally-off GaN devices have been studied. The normally-on device with Sapphire substrate shows good Idsatand breakdown characteristics, but the gate leakage current is quite large. The first normally-off GaN hybrid metal insulator semiconductor – high electron mobility transistor (MIS-HEMT) grown on Si substrate exhibits good performance with positive threshold voltage of 3V and the breakdown voltage of over 1800V. However the second normally-off GaN MOSFET structure is rather difficult to exhibit good blocking characteristic compared to GaN MIS-HEMT device due to inadequate device design.
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Spirrov, Dimitar, Eugen Kludt, Eline Verschueren, Andreas Büchner et Tom Francart. « Effect of (Mis)Matched Compression Speed on Speech Recognition in Bimodal Listeners ». Trends in Hearing 24 (janvier 2020) : 233121652094897. http://dx.doi.org/10.1177/2331216520948974.

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Automatic gain control (AGC) compresses the wide dynamic range of sounds to the narrow dynamic range of hearing-impaired listeners. Setting AGC parameters (time constants and knee points) is an important part of the fitting of hearing devices. These parameters do not only influence overall loudness elicited by the hearing devices but can also affect the recognition of speech in noise. We investigated whether matching knee points and time constants of the AGC between the cochlear implant and the hearing aid of bimodal listeners would improve speech recognition in noise. We recruited 18 bimodal listeners and provided them all with the same cochlear-implant processor and hearing aid. We compared the matched AGCs with the default device settings with mismatched AGCs. As a baseline, we also included a condition with the mismatched AGCs of the participants’ own devices. We tested speech recognition in quiet and in noise presented from different directions. The time constants affected outcomes in the monaural testing condition with the cochlear implant alone. There were no specific binaural performance differences between the two AGC settings. Therefore, the performance was mostly dependent on the monaural cochlear implant alone condition.
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Chakraborty, B. R., Nita Dilawar, S. Pal et D. N. Bose. « SIMS characterization of GaAs MIS devices at the interface ». Thin Solid Films 411, no 2 (mai 2002) : 240–46. http://dx.doi.org/10.1016/s0040-6090(02)00277-8.

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Hordequin, C., A. Brambilla, P. Bergonzo et F. Foulon. « Nuclear radiation detectors using thick amorphous-silicon MIS devices ». Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment 456, no 3 (janvier 2001) : 284–89. http://dx.doi.org/10.1016/s0168-9002(00)00575-1.

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Kim, Seong-Il, Ho-Kyun Ahn, Jong-Won Lim et Kijun Lee. « GaN MIS-HEMT PA MMICs for 5G Mobile Devices ». Journal of the Korean Physical Society 74, no 2 (janvier 2019) : 196–200. http://dx.doi.org/10.3938/jkps.74.196.

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Andreev, D. V., G. G. Bondarenko, V. V. Andreev, V. M. Maslovsky et A. A. Stolyarov. « Modification of MIS Devices by Radio-Frequency Plasma Treatment ». Acta Physica Polonica A 136, no 2 (août 2019) : 263–66. http://dx.doi.org/10.12693/aphyspola.136.263.

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Ruff, Katherine. « How impact measurement devices act : the performativity of theory of change, SROI and dashboards ». Qualitative Research in Accounting & ; Management 18, no 3 (22 janvier 2021) : 332–60. http://dx.doi.org/10.1108/qram-02-2019-0041.

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Purpose This study aims to examine the role of devices in assessing the social impact of an organization. The study examines the effects of device and analyst expertise on the contents and conclusions of the report. Design/methodology/approach Six impact reports based on the same data from the same organization were compared to each other, to the charity data and to the devices used. Specific attention is paid to the role of the device’s sociomaterial form and discursive entanglements. Findings The six reports assessed the impact differently from each other and in ways that were consistent with the devices used. The devices performatively reconfigured the charity in impact reports through a series of omissions and misrepresentations which could be traced to the discourses hardwired into the devices themselves. The devices did not simply present the same impact assessment to different audiences or for different purposes, but (mis)represented the charity in specific ways aligned with the discursive entanglements. Research limitations/implications The performativity of sociomaterial impact devices has implications for how researchers approach the study of impact measurement. Practical implications In this study, faithful adherence to an impact device led to greater omissions and misrepresentations than less expert impact assessments. Analysts should be supported to identify biases in their devices and be aware of sorts of omissions and misrepresentations that may result. Faithful adherence may not be the mark of rigorous analysis. Originality/value Performativity of impact measurement devices is explored with a unique data set.
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Yo-Ping Huang et Tienwei Tsai. « A Fuzzy Semantic Approach to Retrieving Bird Information Using Handheld Devices ». IEEE Intelligent Systems 20, no 1 (janvier 2005) : 16–23. http://dx.doi.org/10.1109/mis.2005.1.

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Herrero, Jose Luis, Jesus Lozano, Jose Pedro Santos, J. Alvaro Fernandez et Jose Ignacio Suarez Marcelo. « A Web-Based Approach for Classifying Environmental Pollutants Using Portable E-nose Devices ». IEEE Intelligent Systems 31, no 3 (mai 2016) : 108–12. http://dx.doi.org/10.1109/mis.2016.48.

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Doghish, M. Y., et F. D. Ho. « A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices ». IEEE Transactions on Electron Devices 39, no 12 (1992) : 2771–80. http://dx.doi.org/10.1109/16.168723.

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Benamara, Z., et B. Gruzza. « Preparation and characterization of germanium substrates for MIS electronic devices ». Vacuum 46, no 5-6 (mai 1995) : 477–80. http://dx.doi.org/10.1016/0042-207x(94)00110-3.

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Perina, Welder, Joao Martino et Paula Agopian. « (Digital Presentation) Analysis of MIS-HEMT Kink Effect in Saturation Region ». ECS Meeting Abstracts MA2023-01, no 33 (28 août 2023) : 1873. http://dx.doi.org/10.1149/ma2023-01331873mtgabs.

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The High Electron Mobility Transistor (HEMT) has been widely used in the field of power electronics and high frequency operation since 1983 (1), while presenting a simple circuit design for analog applications (2, 3), and for extreme harsh environments as well (3, 4). However, HEMTs presents a problem with gate leakage and current collapse which can be solved by introducing an insulator between the gate and semiconductor while maintaining the high performance, hence the Metal Insulator Semiconductor High Electron Mobility Transistor (MIS-HEMT) appears as a solution. The AlGaN/GaN heterostructures forms, at the interface, a sheet with high electron density (2DEG – 2 Dimension Electron Gas), which also presents a high electron mobility. The MIS structure presents a well know conduction between source and drain. As a result, the MIS-HEMT device presents multiple conductions. The focus of this work is to study how the multiple conductions of the MIS-HEMT impact on the output characteristics. The studied devices are, a MIS-HEMT with the gate insulator composed of a 2 nm Si3N4, and a GaN MOSFET of 25 nm of Al2O3 as the gate insulator, both devices were fabricated at imec Leuven – Belgium, and have the same dimensions: gate width of 5 µm and gate length of 600 nm. Their respective schematics are presented at figure 1. The drain current (IDS) as a function of drain voltage (VDS) for a MIS-HEMT (left) and GaN MOSFET (right) with multiple overdrive voltage (VGT) is presented in figure 2. The VDS ranges for these devices are different because they have different saturation points, although it is possible to notice that the MIS-HEMT shows greater current drive when compared to MOSFET considering the same VDS, which is likely due to the formation of the 2DEG as the main conducting mechanism in the MIS-HEMT. Previous works (5 – 8) showed that the MIS-HEMT have multiple conduction mechanisms dependent on VGT, and figure 3 shows the effect of those multiple conductions on the output current of the device where it is very likely that one of those conductions have different VDS sat. It is possible to notice higher values of IDS with increasing VGT, as expected. However, for high enough VGT, there is an anomalous IDS increase (kink) in the saturation region, that occurs due to the different conduction mechanism (MOS and HEMT conductions). This effect will be called as MIS-HEMT kink effect (MH kink effect). This MH Kink effect occurs when the HEMT conduction mechanism overcomes the MOS conduction. The output conductance (gD) as a function of VDS for the MOSFET is presented in figure 4. Figure 5 shows gD as a function of VDS for multiple VGT for the MIS-HEMT, where it is possible to see a peak in the gD (in saturation region) shifting to the right for increasing VGT, caused by the MH kink effect. In order to better visualize, the VDS value for which the MH kink takes place, it is plotted as a function of VGT in figure 6. It is possible to see that as VGT increases, the MK kink effect shifts for higher VDS values, thanks to the higher electron density in 2DEG making the HEMT conduction less dependent on VDS. Figure 1
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Ťapajna, Milan. « Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications ». Crystals 10, no 12 (18 décembre 2020) : 1153. http://dx.doi.org/10.3390/cryst10121153.

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GaN-based high-electron mobility transistors (HEMTs) have brought unprecedented performance in terms of power, frequency, and efficiency. Application of metal-insulator-semiconductor (MIS) gate structure has enabled further development of these devices by improving the gate leakage characteristics, gate controllability, and stability, and offered several approaches to achieve E-mode operation desired for switching devices. Yet, bias-temperature instabilities (BTI) in GaN MIS transistors represent one of the major concerns. This paper reviews BTI in D- and E-mode GaN MISHEMTs and fully recess-gate E-mode devices (MISFETs). Special attention is given to discussion of existing models describing the defects distribution in the GaN-based MIS gate structures as well as related trapping mechanisms responsible for threshold voltage instabilities. Selected technological approaches for improving the dielectric/III-N interfaces and techniques for BTI investigation in GaN MISHEMTs and MISFETs are also outlined.
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Войцеховский, А. В., С. Н. Несмелов, С. М. Дзядух, С. А. Дворецкий, Н. Н. Михайлов, Г. Ю. Сидоров et М. В. Якушев. « Aдмиттанс МДП-структур на основе nBn-систем из эпитаксиального HgCdTe, разработанных для детектирования в спектральном диапазоне 3-5 μm ». Письма в журнал технической физики 47, no 12 (2021) : 34. http://dx.doi.org/10.21883/pjtf.2021.12.51065.18760.

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The admittance of test MIS devices based on nBn structures from Hg1-xCdxTe grown by molecular beam epitaxy (MBE) is investigated. The composition x in the absorbing layer was 0.29, and the composition in the barrier layer was 0.60. An equivalent circuit of a MIS device based on an nBn structure is proposed and the values of the elements of this circuit are found under various conditions. Comparison of the temperature dependence of the barrier resistance with the Rule07 model indicates the possibility of creating efficient nBn detectors based on MBE HgCdTe for the spectral range of 3–5 μm.
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Noborio, Masato, Michael Grieb, Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda et Tsunenobu Kimoto. « Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices ». Materials Science Forum 645-648 (avril 2010) : 825–28. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.825.

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In this paper, nitrided insulators such as N2O-grown oxides, deposited SiO2 annealed in N2O, and deposited SiNx/SiO2 annealed in N2O on thin-thermal oxides have been investigated for realization of high performance n- and p-type 4H-SiC MIS devices. The MIS capacitors were utilized to evaluate MIS interface characteristics and the insulator reliability. The channel mobility was determined by using the characteristics of planar MISFETs. Although the N2O-grown oxides are superior to the dry O2-grown oxides, the deposited SiO2 and the deposited SiNx/SiO2 exhibited lower interface state density (n-MIS: below 7x1011 cm-2eV-1 at EC-0.2 eV, p-MIS: below 6x1011 cm-2eV-1 at EV+0.2 eV) and higher channel mobility (n-MIS: over 25 cm2/Vs, p-MIS: over 10 cm2/Vs). In terms of reliability, the deposited SiO2 annealed in N2O exhibits a high charge-to-breakdown over 50 C/cm2 at room temperature and 15 C/cm2 at 200°C. The nitrided-gate insulators formed by deposition method have superior characteristics than the thermal oxides grown in N2O.
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Vispute, R. D., A. Patel, K. Baynes, B. Ming, R. P. Sharma, T. Venkatesan, C. J. Scozzie, A. Lelis, T. Zheleva et K. A. Jones. « Pulsed-laser-deposited AlN films for high-temperature SiC MIS devices ». MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000) : 591–97. http://dx.doi.org/10.1557/s1092578300004804.

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We report on the fabrication of device-quality AlN heterostructures grown on SiC for high-temperature electronic devices. The AlN films were grown by pulsed laser deposition (PLD) at substrate temperatures ranging from 25 °C (room temperature) to 1000 °C. The as-grown films were investigated using x-ray diffraction, Rutherford backscattering specttroscopy, ion channeling, atomic force microscopy, and transmission electron microscopy. The AlN films grown above 700 °C were highly c-axis oriented with rocking curve FWHM of 5 to 6 arc-min. The ion channeling minimum yields near the surface region for the AlN films were ∼2 to 4%, indicating their high degree of crystallinity. TEM studies indicated that AlN films were epitaxial and single crystalline in nature with a large number of stacking faults as a results of lattice mismatch and growth induced defects. The surface roughness for the films was about 0.5 nm, which is close to the unit cell height of the AlN. Epitaxial TiN ohmic contacts were also developed on SiC, GaN, and AlN by in-situ PLD. Epitaxial TiN/AlN/SiC MIS capacitors with gate areas of 4 * 10−4 cm2 were fabricated, and high-temperature current-voltage (I-V) characteristics were studied up to 450 °C. We have measured leakage current densities of low 10−8 A/cm2 at room temperature, and have mid 10−3 A/cm2 at 450°C under a field of 2 MV/cm.
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Saranti, Konstantina, et Shashi Paul. « Two-Terminal Non-Volatile Memory Devices Using Silicon Nanowires as the Storage Medium ». Advances in Science and Technology 95 (octobre 2014) : 78–83. http://dx.doi.org/10.4028/www.scientific.net/ast.95.78.

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In the recent years a notable progress in the miniaturisation of electronic devices has been achieved in which the main component that has shown great interest is electronic memory. However, miniaturisation is reaching its limit. Alternative materials, manufacturing equipment and architectures for the storage devices are considered. In this work, an investigation on the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices is presented. Silicon nanostructures have attracted attention due to their small size, interesting properties and their potential integration into electronic devices. The two-terminal memory devices presented in this work, have a simple structure of silicon nanowires sandwiched between dielectric layers (silicon nitride) on glass substrate with thermally evaporated aluminium bottom and top contacts. The silicon nanostructures and the dielectric layer were deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) technique. The electrical behaviour of the memory cell was examined by Current-Voltage (I-V), data retention time (Current-time) and write-read-erase-read measurements. Metal-Insulator-Semiconductor (MIS) structures were also prepared for further analysis. The same silicon nanowires were embedded into the MIS capacitors and Capacitance-Voltage (C-V) analysis was conducted. Strong I-V and C-V hysteresis as well as an electrical bistability were detected. The memory effect is observed by this electrical bistability of the device that was able to switch between high and low conductivity states.
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Khosa, R. Y., J. T. Chen, M. Winters, K. Pálsson, R. Karhu, J. Hassan, N. Rorsman et E. Ö. Sveinbjӧrnsson. « Electrical characterization of high k-dielectrics for 4H-SiC MIS devices ». Materials Science in Semiconductor Processing 98 (août 2019) : 55–58. http://dx.doi.org/10.1016/j.mssp.2019.03.025.

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Rouag, N., Z. Ouennoughi, M. Rommel, K. Murakami et L. Frey. « Current conduction mechanism of MIS devices using multidimensional minimization system program ». Microelectronics Reliability 55, no 7 (juin 2015) : 1028–34. http://dx.doi.org/10.1016/j.microrel.2015.05.001.

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Mohanbabu, A., R. Saravana Kumar et N. Mohankumar. « Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices ». Superlattices and Microstructures 112 (décembre 2017) : 604–18. http://dx.doi.org/10.1016/j.spmi.2017.10.020.

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Lichtenwalner, Daniel J., Jesse Jur, Naoya Inoue et Angus Kingon. « High-Temperature Processing Effects on Lanthanum Silicate Gate Dielectric MIS Devices ». ECS Transactions 1, no 5 (21 décembre 2019) : 227–38. http://dx.doi.org/10.1149/1.2209272.

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Xia, Yongwei, Georges Pananakakis et Georges Kamarinos. « Numerical simulation of the current-voltage characteristics of MIS tunnel devices ». Journal of Computational Physics 91, no 2 (décembre 1990) : 478–85. http://dx.doi.org/10.1016/0021-9991(90)90049-7.

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Evans, N. J., G. G. Roberts et M. C. Petty. « Effects of hydrogen gas on palladium/LB film/silicon MIS devices ». Sensors and Actuators 16, no 3 (mars 1989) : 255–61. http://dx.doi.org/10.1016/0250-6874(89)87007-6.

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Cheng, Wei-Chih, Jiaqi He, Minghao He, Zepeng Qiao, Yang Jiang, Fangzhou Du, Xiang Wang, Haimin Hong, Qing Wang et Hongyu Yu. « Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications ». Journal of Vacuum Science & ; Technology B 40, no 2 (mars 2022) : 022212. http://dx.doi.org/10.1116/6.0001654.

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The high- k nature of HfO2 makes it a competitive gate oxide for various GaN-based power devices, but the high trap densities at the HfO2/GaN interface have hindered the application. This work was specifically carried out to explore the interface between GaN and ozone-based atomic-layer-deposited HfO2 gate oxide. Furthermore, the GaN surface is preoxidized before gate oxide deposition to prepare an oxygen-rich HfO2/GaN interface. On the preoxidized GaN surface, a sharper HfO2/GaN interface and amorphous HfO2 bulk form during the subsequent deposition, translating to improved electric performance in metal–insulator–semiconductor (MIS) devices. The ozone-based HfO2 shows a high breakdown electric field (∼7 MV/cm) and a high dielectric constant (∼28). Furthermore, the MIS high electron mobility transistors' negligible VTH hysteresis and parallel conductance measurements reflect the ultralow trap densities of the HfO2/GaN interface (<1012 cm−2 eV−1). Therefore, the proposed HfO2 gate oxide scheme offers a promising solution for developing GaN MIS devices.
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40

Lin, Shawn R., et Kevin M. Miller. « Lessons Learned from Implantation of Morcher 50D and 96S Artificial Iris Diaphragms ». Case Reports in Ophthalmology 8, no 3 (23 novembre 2017) : 527–34. http://dx.doi.org/10.1159/000484128.

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Purpose: To discuss problems associated with the implantation of two Morcher iris diaphragm models. Methods: We describe the history, intraoperative complications, and postoperative complications of 5 patients with specific Morcher iris implants. Results: We implanted Morcher 50D devices in 1 patient and Morcher 96S devices in 4 patients. Complications included postoperative rotation, device mis-sizing, difficult intraoperative rotation, zonular dehiscence, and intraoperative hemorrhage. Conclusion: Artificial iris implantation has a steep learning curve. With widespread availability on the horizon in the United States, the sharing of surgical experiences is key to achieving the best outcomes for patients.
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Yoon, Young Jun, Jae Sang Lee, Jae Kwon Suk, In Man Kang, Jung Hee Lee, Eun Je Lee et Dong Seok Kim. « Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment ». Micromachines 12, no 8 (23 juillet 2021) : 864. http://dx.doi.org/10.3390/mi12080864.

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This study investigated the combined effects of proton irradiation and surface pre-treatment on the current characteristics of Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMTs) to evaluate the radiation hardness involved with the Silicon Nitride (SiN) passivation/GaN cap interface. The impact of proton irradiation on the static and dynamic current characteristics of devices with and without pre-treatment were analyzed with 5 MeV proton irradiation. In terms of transfer characteristics before and after the proton irradiation, the drain current of the devices without and with pre-treatment were reduced by an increase in sheet and contact resistances after the proton irradiation. In contrast with the static current characteristics, the gate-lag characteristics of the device with pre-treatment were significantly degenerated. In the device with pre-treatment, the hydrogen passivation for surface states of the GaN cap was formed by the pre-treatment and SiN deposition processes. Since the hydrogen passivation was removed by the proton irradiation, the newly created vacancies resulted in the degeneration of gate-lag characteristics. After nine months in an ambient atmosphere, the gate-lag characteristics of the device with pre-treatment were recovered because of the hydrogen recombination. These results demonstrated that the radiation hardness of MIS-HEMTs was affected by the SiN/GaN interface quality.
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Hosoi, Takuji, Yusuke Kagei, Takashi Kirino, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura et Heiji Watanabe. « Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices ». Materials Science Forum 679-680 (mars 2011) : 496–99. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.496.

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Superior flatband voltage (Vfb) stability of SiC-based metal-insulator-semiconductor (MIS) devices with aluminum oxynitride (AlON) gate dielectrics was demonstrated. MIS capacitors with gate insulators consisting of a thick pure aluminum oxide (Al2O3) and a thin underlying SiO2 layer fabricated on n-type 4H-SiC substrates showed a positive Vfb shift due to substrate electron injection depending on the applied gate bias and the thickness of the SiO2 interlayer. This large Vfb shift was greatly suppressed for devices with AlON/SiO2 stacked gate dielectrics, suggesting that electron trapping sites in Al2O3 film were mostly compensated for by nitrogen incorporation. This finding is helpful in realizing highly reliable SiC-based MIS field-effect-transistors (MISFETs) in terms of threshold voltage stability.
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Calzolaro, Anthony, Thomas Mikolajick et Andre Wachowiak. « Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices ». Materials 15, no 3 (21 janvier 2022) : 791. http://dx.doi.org/10.3390/ma15030791.

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Insulated-gate GaN-based transistors can fulfill the emerging demands for the future generation of highly efficient electronics for high-frequency, high-power and high-temperature applications. However, in contrast to Si-based devices, the introduction of an insulator on (Al)GaN is complicated by the absence of a high-quality native oxide for GaN. Trap states located at the insulator/(Al)GaN interface and within the dielectric can strongly affect the device performance. In particular, although AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) provide superior properties in terms of gate leakage currents compared to Schottky-gate HEMTs, the presence of an additional dielectric can induce threshold voltage instabilities. Similarly, the presence of trap states can be detrimental for the operational stability and reliability of other architectures of GaN devices employing a dielectric layer, such as hybrid MIS-FETs, trench MIS-FETs and vertical FinFETs. In this regard, the minimization of trap states is of critical importance to the advent of different insulated-gate GaN-based devices. Among the various dielectrics, aluminum oxide (Al2O3) is very attractive as a gate dielectric due to its large bandgap and band offsets to (Al)GaN, relatively high dielectric constant, high breakdown electric field as well as thermal and chemical stability against (Al)GaN. Additionally, although significant amounts of trap states are still present in the bulk Al2O3 and at the Al2O3/(Al)GaN interface, the current technological progress in the atomic layer deposition (ALD) process has already enabled the deposition of promising high-quality, uniform and conformal Al2O3 films to gate structures in GaN transistors. In this context, this paper first reviews the current status of gate dielectric technology using Al2O3 for GaN-based devices, focusing on the recent progress in engineering high-quality ALD-Al2O3/(Al)GaN interfaces and on the performance of Al2O3-gated GaN-based MIS-HEMTs for power switching applications. Afterwards, novel emerging concepts using the Al2O3-based gate dielectric technology are introduced. Finally, the recent status of nitride-based materials emerging as other gate dielectrics is briefly reviewed.
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Tyan, Shing-Long, Hsiang-Chi Tang, Zhang-Wei Wu et Ting-Shan Mo. « Diamond-like carbon as gate dielectric for metal–insulator–semiconductor applications ». Modern Physics Letters B 33, no 34 (10 décembre 2019) : 1950423. http://dx.doi.org/10.1142/s0217984919504232.

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Diamond-like carbon (DLC) has been studied as a dielectric material for future metal–insulator–semiconductor (MIS) technology. In this paper, ultrathin DLC films were deposited on silicon substrates by using the dc magnetron sputtering technique at various deposition voltages. The current–voltage characteristics indicated that the leakage currents of the MIS devices decreased with an increase in deposition voltages, and that a low leakage current ([Formula: see text] A/cm2) was achieved at −2 V bias voltage. The deposition voltage effects on the structures of films were investigated through Raman spectroscopy, which indicated that the sp3 bonding fraction decreased with an increase in the deposition voltage. The ramp-voltage breakdown test revealed high effective breakdown electric field ([Formula: see text]85 MV/cm) for the MIS device with the DLC film deposited at 1100-V deposition. Stress-induced leakage current measurement indicated that the DLC film exhibited excellent reliability.
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Ferguson, P. P., S. Gauvin et N. Beaudoin. « On the importance of the MIS junction to the photovoltaic properties of ITO/TPD/Alq3/Al electroluminescent devices ». Canadian Journal of Physics 91, no 1 (janvier 2013) : 60–63. http://dx.doi.org/10.1139/cjp-2012-0113.

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Organic electroluminescent devices with an ITO/TPD/Alq3/Al structure are fabricated and tested for their photovoltaic properties. To produce an open-circuit photovoltage, a conditioning is required. Here, the conditioning is exposing the device to air for a short duration. Without this conditioning, the device produces a short-circuit photocurrent with practically no open-circuit photovoltage. Calculations and fits to the photovoltaic data show that this observation could be attributed to the formation of a metal–insulator–semiconductor junction between the Alq3 and the Al, where an insulating layer is created by this conditioning.
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Keymel, Stefanie. « COVID-19 : Wann muss ich an MIS-A denken ? » Kompass Pneumologie 10, no 1 (30 novembre 2021) : 15–16. http://dx.doi.org/10.1159/000521061.

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Multisystem inflammatory syndrome in adults (MIS-A) came to attention back in June 2020, when the United States Center for Disease Control and Prevention (CDC) received initial reports regarding patients who had presented delayed and multisystem involvement of the disease, with clinical course resembling multisystem inflammatory syndrome in children (MIS-C). This study introduces a case of MIS-A, where the patient presented 3 weeks after initial COVID-19 exposure. His clinical course was consistent with the working definition of MIS-A as specified by the CDC. Aggressive supportive care in the intensive care unit, utilization of advanced heart failure devices, and immunomodulatory therapeutics (high-dose steroids, anakinra, intravenous immunoglobulin) led to clinical recovery. Management of MIS-A is a topic of ongoing research and needs more studies to elaborate on treatment modalities and clinical predictors.
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Addepalli, Suresh. « Annealing temperature influenced physical properties of Al2TiO5 thin films for MIS devices ». Advanced Materials Proceedings 2, no 3 (1 mars 2017) : 189–93. http://dx.doi.org/10.5185/amp.2017/3011.

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Voitsekhovskii, A. V., et et al. « Impedance of MIS devices based on nBn structures from mercury cadmium telluride ». Izvestiya vysshikh uchebnykh zavedenii. Fizika 63, no 6 (1 juin 2020) : 8–15. http://dx.doi.org/10.17223/00213411/63/6/8.

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Andreev, D. V., G. G. Bondarenko, V. V. Andreev, V. M. Maslovsky et A. A. Stolyarov. « Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments ». Acta Physica Polonica A 132, no 2 (août 2017) : 245–48. http://dx.doi.org/10.12693/aphyspola.132.245.

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Vuillaume, D., P. Fontaine, J. Collet, D. Deresmes, M. Garet et F. Rondelez. « Alkyl-trichlorosilane monolayer as ultra-thin insulating film for silicon MIS devices ». Microelectronic Engineering 22, no 1-4 (août 1993) : 101–4. http://dx.doi.org/10.1016/0167-9317(93)90140-z.

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