Bibliographies thématiques / MIS devices

Littérature scientifique sur le sujet « MIS devices »

Auteur : Grafiati
Publié le 26 juillet 2024

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Articles de revues sur le sujet "MIS devices"

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Hawasli, Ammar H., Jawad M. Khalifeh, Ajay Chatrath, Chester K. Yarbrough et Wilson Z. Ray. « Minimally invasive transforaminal lumbar interbody fusion with expandable versus static interbody devices : radiographic assessment of sagittal segmental and pelvic parameters ». Neurosurgical Focus 43, no 2 (août 2017) : E10. http://dx.doi.org/10.3171/2017.5.focus17197.

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OBJECTIVEMinimally invasive transforaminal lumbar interbody fusion (MIS-TLIF) has been adopted as an alternative technique to hasten recovery and minimize postoperative morbidity. Advances in instrumentation technologies and operative techniques have evolved to maximize patient outcomes as well as radiographic results. The development of expandable interbody devices allows a surgeon to perform MIS-TLIF with minimal tissue disruption. However, sagittal segmental and pelvic radiographic outcomes after MIS-TLIF with expandable interbody devices are not well characterized. The object of this study is to evaluate the radiographic sagittal lumbar segmental and pelvic parameter outcomes of MIS-TLIF performed using an expandable interbody device.METHODSA retrospective review of MIS-TLIFs performed between 2014 and 2016 at a high-volume center was performed. Radiographic measurements were performed on lateral radiographs before and after MIS-TLIF with static or expandable interbody devices. Radiographic measurements included disc height, foraminal height, fused disc angle, lumbar lordosis, pelvic incidence, sacral slope, and pelvic tilt. Mismatch between pelvic incidence and lumbar lordosis were calculated for each radiograph.RESULTSA total of 48 MIS-TLIFs were performed, predominantly at the L4–5 level, in 44 patients. MIS-TLIF with an expandable interbody device led to a greater and more sustained increase in disc height when compared with static interbody devices. Foraminal height increased after MIS-TLIF with expandable but not with static interbody devices. MIS-TLIF with expandable interbody devices increased index-level segmental lordosis more than with static interbody devices. The increase in segmental lordosis was sustained in the patients with expandable interbody devices but not in patients with static interbody devices. For patients with a collapsed disc space, MIS-TLIF with an expandable interbody device provided superior and longer-lasting increases in disc height, foraminal height, and index-level segmental lordosis than in comparison with patients with static interbody devices. Using an expandable interbody device improved the Oswestry Disability Index scores more than using a static interbody device, and both disc height and segmental lordosis were correlated with improved clinical outcome. Lumbar MIS-TLIF with expandable or static interbody devices had no effect on overall lumbar lordosis, pelvic parameters, or pelvic incidence–lumbar lordosis mismatch.CONCLUSIONSPerforming MIS-TLIF with an expandable interbody device led to a greater and longer-lasting restoration of disc height, foraminal height, and index-level segmental lordosis than MIS-TLIF with a static interbody device, especially for patients with a collapsed disc space. However, neither technique had any effect on radiographic pelvic parameters.
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Al-Begg, S. M., S. H. Saeed et A. S. Al-Rawas. « Thermal annealing effects on the electrical characteristics of alpha particles irradiated MIS device AuTa2O5GaAs ». Journal of Ovonic Research 19, no 4 (juillet 2023) : 359–67. http://dx.doi.org/10.15251/jor.2023.194.359.

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An alpha particle-irradiated MIS device made of AuTa2O5GaAs was used to study how thermal annealing affects the I-V characteristics and how the current changes with annealing temperature, radiation energy, and voltage biassing. The super-gate of the MIS structure was made by using thermal evaporation to build a 1000°A thick layer of gold under a vacuum of about 10-5 torr. At room temperature, the devices were exposed to alpha particles from the radioactive source 226Ra (0.5 Ci) with energies of 5.1, 4, 3, 1.8, and 1.2 MeV for 0–30 minutes. After 30 minutes of annealing at 150, 200, and 300 o C in a vacuum of 10-3 torr, the current-voltage (I-V) characteristics of the irradiation devices were found. During thermal annealing, different results were seen with bias voltages of 0.4, 1, and 2 V and temperatures of 150, 200, and 300 o C. Annealing the device at 150 o C doesn't change how stable it is, but annealing it at 300 o C causes ohmic conduction in the device's properties. The device's current can be fixed best when the device is heated to 200 o C and then cooled. Also, thermal annealing seems to have different effects on the I–V electrical characteristics of the devices depending on the energy of the particles and the voltage biassing.
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Zhang, Xiaodong, Xing Wei, Peipei Zhang, Hui Zhang, Li Zhang, Xuguang Deng, Yaming Fan et al. « Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric ». Electronics 11, no 6 (13 mars 2022) : 895. http://dx.doi.org/10.3390/electronics11060895.

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This study has demonstrated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates with a SiNx/SiON composite gate dielectric. The threshold voltage shift in the devices was investigated. The MIS-HEMTs with the SiNx/SiON composite gate dielectric exhibited superior threshold voltage uniformity and small threshold voltage hysteresis than the reference device with SiNx only gate dielectric. The variation of the device threshold voltage was mainly related to trapping process by the interface states, as confirmed by band diagrams of MIS-HEMTs at different gate biases. Based on frequency-dependent capacitance measurements, interface state densities of the devices with the composite and single gate dielectrics were extracted, where the former showed much smaller interface state density. These results indicate that the SiNx/SiON composite gate dielectric can effectively improve the device performance of GaN-based MIS-HEMTs and contribute to the development of high-performance GaN electronic devices.
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Engstrom, O., et A. Carlsson-Gylemo. « MIS Devices for optical information processing ». IEEE Transactions on Electron Devices 32, no 11 (novembre 1985) : 2438–40. http://dx.doi.org/10.1109/t-ed.1985.22292.

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Moriwaki, M. M., J. R. Srour, L. F. Lou et J. R. Waterman. « Ionizing radiation effects on HgCdTe MIS devices ». IEEE Transactions on Nuclear Science 37, no 6 (1990) : 2034–41. http://dx.doi.org/10.1109/23.101226.

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Tardy, J., I. Thomas, P. Viktorovitch, M. Gendry, J. L. Perrossier, C. Santinelli, M. P. Besland, P. Louis et G. Post. « Long-term stability of InP MIS devices ». Applied Surface Science 50, no 1-4 (juin 1991) : 383–89. http://dx.doi.org/10.1016/0169-4332(91)90203-v.

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Hynecek, Jaroslav. « 4455739 Process protection for individual device gates on large area MIS devices ». Microelectronics Reliability 25, no 1 (janvier 1985) : 204. http://dx.doi.org/10.1016/0026-2714(85)90469-x.

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Preuveneers, D., et Y. Berbers. « Encoding Semantic Awareness in Resource-Constrained Devices ». IEEE Intelligent Systems 23, no 2 (mars 2008) : 26–33. http://dx.doi.org/10.1109/mis.2008.25.

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Ragusa, Edoardo, Christian Gianoglio, Rodolfo Zunino et Paolo Gastaldo. « Image Polarity Detection on Resource-Constrained Devices ». IEEE Intelligent Systems 35, no 6 (1 novembre 2020) : 50–57. http://dx.doi.org/10.1109/mis.2020.3011586.

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Hsu, Che-Ching, Pei-Chien Shen, Yi-Nan Zhong et Yue-Ming Hsin. « AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer ». MRS Advances 3, no 3 (28 décembre 2017) : 143–46. http://dx.doi.org/10.1557/adv.2017.626.

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ABSTRACTIn this study, AlGaN/GaN MIS-HEMTs with a p-GaN cap layer and ALD deposited Al2O3 gate insulator were fabricated. Devices with two different thicknesses of p-GaN cap layers were investigated and compared. AlGaN/GaN MIS-HEMT with an 8-nm p-GaN cap showed a better DC characteristics than device with a 5-nm p-GaN cap. The drain current of 662.9 mA/mm, a high on/off current ratio of 2.67×109 and a breakdown voltage of 672 V were measured in device with an 8-nm p-GaN cap. In addition, lateral leakage current was investigated by using adjacent MIS gate structures with a separation of 3 μm to investigate the leakage current.
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Thèses sur le sujet "MIS devices"

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Torres, Almarza Ignacio. « Interfacial effects in polymer MIS devices ». Thesis, Bangor University, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.409836.

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Thomas, Nicholas John. « GaAs/Langmuir-Blodgett film MIS devices ». Thesis, Durham University, 1986. http://etheses.dur.ac.uk/6829/.

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Langmuir-Blodgett (LB) films have previously been used as organic insulating layers in compound semiconductor metal-insulator- semiconductor devices, with promising preliminary results. This thesis describes the first investigation of the use of LB films In gallium arsenide metal-insulator-semiconductor devices. Diodes incorporating thin layers of w-tricosenoic acid or substituted copper phthalocyanine possessed 'leaky' electrical characteristics, i.e. there is some conduction through the LB film. This 'leaky' behaviour was exploited to produce the first metal- Insulator-semiconductor-switch (MISS) incorporating an LB film. MISS devices on n-p(^+) GaAs were produced with good switching characteristics and a high yield (~90%), using LB film thicknesses between 9 and 33 nm. It was shown that the 'punch through' mechanism was responsible for the switching behaviour. p-n(^+) GaAs/LB film MISS diodes behaved rather differently, with good switching characteristics only found at reduced temperature. Some degradation of the characteristics of LB film MISS devices was noted, although this was reduced by using the more robust phthalocyanlne LB films. Metal-tunnel-insulator-semiconductor diodes were produced on the ternary alloy Ga(_.47)In(_.53)As, using LB film monolayers. The barrier height was apparently larger than that of Schottky barriers on this material, with a very substantial reduction in current density due to tunnelling through the LB film. Using this technique it may be possible to produce very high performance GaInAs fleld-effect-transistors, which are analogous to GaAs metal-semiconductor field effect transistors.
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Clifton, Paul Alan. « Characterisation of silicon MIS negative resistance devices ». Thesis, Durham University, 1989. http://etheses.dur.ac.uk/6434/.

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Metal-insulator-semiconductor switches (MISS), in which the T denotes some form of thin semi-insulating layer and the semiconductor part consists of a pn junction, are part of the general class of regenerative switching devices which includes the thyristor. The switching behaviour of the MISS derives from the ability of the MIS junction to exhibit current gain and to exist in two modes, deep depletion and inversion. In this thesis, a general model for the regenerative switching is proposed after investigating the properties of the MIS junction both theoretically and experimentally. Results from MIS diodes with tunnelling-thickness oxide Mayers indicate that interface states play a dominant role in their electrical behaviour and that the uniformity of the oxide is poor, giving rise to a large spread in the current-voltage characteristics. Subsequently, the epitaxial form of the MISS device is investigated and in particular the importance of isolation of the pn junction. It is concluded that spreading effects set a practical lower limit to the device dimensions, making the epitaxial form unsuitable for microelectronic applications. An alternative semi-insulator, 'silicon-rich oxide' (SRO) is introduced as an optional I-layer with possibly greater integrity than tunnel oxide. MIS diodes formed with SRO are shown to have very similar properties to tunnelling diodes. Large area devices fabricated using this material are surprisingly discovered to exhibit stable negative differential resistance (NDR). Although this discovery at first appears to be contrary to normal circuit stability criteria and to the regenerative feedback model itself, both of these points are resolved. It is shown that the frequency of oscillation of an unstable device is controlled by the external circuit. Then it is proposed that if this frequency is greater than the maximum frequency of operation of the regenerative mechanism, stable NDR is observed. In the final chapter, alternative lateral MISS structures which should overcome the geometrical limitations of epitaxial devices are discussed.
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Holman, Brian. « The electrical characterization of tantalum capacitors as MIS devices ». Connect to this title online, 2008. http://etd.lib.clemson.edu/documents/1219849377/.

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Lancaster, Janet. « Organic MIS Devices Based on a High-k Dielectric ». Thesis, Bangor University, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.520852.

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Evans, N. J. « Influence of gases on the electrical properties of MIS devices ». Thesis, Durham University, 1986. http://etheses.dur.ac.uk/6866/.

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This thesis studies the effects of gas ambients on the electrical properties of the insulator-semiconductor interface of a MIS capacitor. A microcomputer-controlled instrumentation system has been developed to extract this information from measurement of the a.c. admittance of MOS or MIS devices. The system incorporates several novel developments in circuitry and software which enable these admittance data to be automatically collected and processed in the frequency domain by remote recalibration of the instrumentation. This advancement permits interface state density information to be calculated more quickly and accurately than has been previously possible using manually-operated equipment. The system has been used to investigate the influence of gases on the density of interface states in a MIS capacitor, in particular the palladium/silicon dioxide/silicon structure which is sensitive to hydrogen gas. A distinct change in the distribution of surface state density across the silicon bandgap has been observed upon exposure to a hydrogen ambient. An alternative insulating layer, an organic Langmuir-Blodgett film multilayer of ω-tricosenoic acid, has been characterised and examined, and increased sensitivity of this structure to hydrogen gas has been indicated.
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Usman, Muhammad. « Impact of Ionizing Radiation on 4H-SiC Devices ». Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-60763.

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Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. However, the radiation tolerance and reliability of SiC-based devices needs to be understood by testing devices  under controlled radiation environments. These kinds of studies have been previously performed on diodes and MESFETs, but multilayer devices such as bipolar junction transistors (BJT) have not yet been studied. In this thesis, SiC material, BJTs fabricated from SiC, and various dielectrics for SiC passivation are studied by exposure to high energy ion beams with selected energies and fluences. The studies reveal that the implantation induced crystal damage in SiC material can be partly recovered at relatively low temperatures, for damag elevels much lower than needed for amorphization. The implantation experiments performed on BJTs in the bulk of devices show that the degradation in deviceperformance produced by low dose ion implantations can be recovered at 420 oC, however, higher doses produce more resistant damage. Ion induced damage at the interface of passivation layer and SiC in BJT has also been examined in this thesis. It is found that damaging of the interface by ionizing radiation reduces the current gain as well. However, for this type of damage, annealing at low temperatures further reduces the gain. Silicon dioxide (SiO2) is today the dielectric material most often used for gate dielectric or passivation layers, also for SiC. However, in this thesis several alternate passivation materials are investigated, such as, AlN, Al2O3 and Ta2O5. These materials are deposited by atomic layer deposition (ALD) both as single layers and in stacks, combining several different layers. Al2O3 is further investigated with respect to thermalstability and radiation hardness. It is observed that high temperature treatment of Al2O3 can substantially improve the performance of the dielectric film. A radiation hardness study furthermore reveals that Al2O3 is more resistant to ionizing radiation than currently used SiO2 and it is a suitable candidate for devices in radiation rich applications.
QC 20120117
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Noborio, Masato. « Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits ». 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/78006.

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Fontaine, Lya. « Développement de briques technologiques pour la réalisation de composants de puissance MOS sur diamant ». Thesis, Toulouse 3, 2020. http://www.theses.fr/2020TOU30060.

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Un des défis de notre époque est lié à la production et à la gestion de l'énergie électrique. Dans ce cadre, l'amélioration des composants à semi-conducteurs de puissance est une des clés pour répondre à ce défi. La grande majorité des composants de puissance actuels sont réalisés à base de silicium. Cependant, les exigences des applications de l'électronique de puissance en termes de tenue en tension, de densité de puissance, de température et de fréquence de commutation sont de plus en plus élevées. Les propriétés physiques intrinsèques des semiconducteurs à large bande interdite (SiC, GaN, Diamant) permettent d'envisager la conception et la fabrication de composants de puissance bien plus performants que les structures tout silicium. Dans ce contexte, nos travaux portent sur le développement et l'optimisation des étapes technologiques permettant la réalisation de composants de puissance MOS en diamant. Ils ont été réalisés dans le cadre du projet ANR MOVeToDIAM, coordonné par le LAAS-CNRS, dans la continuité des travaux sur diamant effectués au laboratoire depuis 2005. Le diamant est donc un semiconducteur à large bande interdite (Eg = 5,5 eV) particulièrement indiqué pour les applications fortes puissances et températures élevées. Il possède de fortes mobilités de porteurs (2200 cm2/V.s pour les électrons et 2050 cm2/V.s pour les trous), permettant le passage de fortes densités de courant, un champ de rupture élevé (Ec ~ 10 MV/cm) et une forte conductivité thermique (lambda ~ 20 W.cm-1.K-1) facilitant la dissipation thermique. Cependant, malgré ces propriétés prometteuses, de nombreux verrous technologiques sont encore à lever afin de conduire à la fabrication de composants de puissance sur diamant. Nous avons donc étudié et optimisé plusieurs étapes technologiques critiques afin de pallier les problèmes induits notamment par la petite taille des échantillons (2x2mm2 à 3x3mm2). Les étapes de photolithographie ont été développées et optimisées pour deux types de résine (AZ4999 positive et NLOF 2035 négative) à l'aide d'un Spray-Coater et d'une machine d'écriture directe par laser, améliorant ainsi fortement la résolution minimale, jusqu'à 1µm, des motifs définis sur les échantillons. Afin de caractériser les contacts ohmiques, nous avons développé deux structures de tests : le TLM droit (Transmission Line Method) et le TLM circulaire ou cTLM (Circular Transmission Line Method).[...]
One of the challenges of our time is related to the production and management of electrical energy. In this context, the improvement of power semiconductor devices is one of the keys to meet this challenge. Most of current power devices are made of silicon. However, the demands of power electronics applications in terms of voltage withstand, power density, temperature and switching frequency are becoming higher. The intrinsic physical properties of wide-bandgap semiconductors (SiC, GaN, Diamond) make it possible to consider the design and fabrication of power devices that are much more efficient than all-silicon structures. In this context, our work focuses on the development and optimization of technological steps enabling the realization of diamond MOS power devices. They were carried out as part of the ANR project MOVeToDIAM, coordinated by LAAS-CNRS, in the continuity of the work on diamond made in the laboratory since 2005. Diamond is therefore a wide bandgap semiconductor (Eg = 5.5 eV) particularly suitable for high power and high temperature applications. It has high carrier mobilities (2200cm2/Vs for electrons and 2050cm2/Vs for holes), allowing the passage of high current densities, a high breaking field (Ec ~ 10 MV/cm) and a strong thermal conductivity (lambda ~ 20 W.cm-1.K-1) facilitating heat dissipation. However, despite these promising properties, many technological locks are still to be lifted in order to lead to the fabrication of power devices on diamond. We have therefore studied and optimized several critical technological steps to overcome the problems caused by the small sample size (2x2mm2 to 3x3mm2). The photolithography steps were developed and optimized for two types of resin (positive AZ4999 and negative NLOF 203) using a Spray-Coater and a direct laser writing machine, thus greatly improving the minimal resolution, up to 1 µm, of the patterns defined on the samples. In order to characterize ohmic contacts, we have developed two test structures: the Transmission Line Method (TLM) and the Circular TLM (Circular Transmission Line Method). If the realization of ohmic contacts on P-type diamond is mastered, the specific contact resistance must be further improved to limit its impact on the electrical performance of the devices. In addition, according to the literature, no ohmic contact has been made on N-type diamond, because of the difficulty of achieving high levels of doping, which remains a major obstacle to the development of the diamond industry. The fabrication of ohmic contacts on P-type and N-type diamond has been optimized on different samples.[...]
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Pace, Bedetti Horacio Martin. « The effect of "Postural Freedom" in laparoscopic surgery ». Doctoral thesis, Universitat Politècnica de València, 2019. http://hdl.handle.net/10251/122312.

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[ES] La cirugía laparoscopia está considerada uno de los principales avances quirúrgicos en las últimas décadas. Esta técnica ha demostrado numerosas ventajas comparadas con la cirugía convencional abierta y ha sido extensamente usada para procesos quirúrgicos en el área abdominal. Para el paciente, la cirugía laparoscópica supone diversas ventajas, como por ejemplo menor dolor post operativo, tiempos de recuperación menores, menor riesgo de infección, o reducción del trauma. Para el cirujano en cambio, la situación es completamente diferente, esta práctica requiere mayor esfuerzo, concentración y estrés mental que la práctica convencional abierta. Además fuerza al cirujano a adoptar posiciones no-neutras en falanges, manos, muñecas, y brazos. Estas posturas no-neutras son la principal causa de fatiga muscular y aumentan el riesgo de problemas musculo-esqueléticos. Estos problemas han sido ampliamente estudiados por diferentes equipos de investigación, los cuales están tratando de mejorar la experiencia del cirujano en el quirófano. El enfoque utilizado en este estudio es diferente del utilizado anteriormente por la mayoría de estos equipos, los cuales suelen propones soluciones basadas en cambios ergonómicos con la intención de mejorar la geometría del mango de pistola convencional, ya que se considera ergonómicamente deficiente. El problema con este enfoque, es que las deficiencias no se encuentran únicamente en el mango, sino en la utilización de un punto de entrada fijo que fuerza a los cirujanos a mantener posiciones desfavorables. En este trabajo, se introduce el concepto "Libertad Postural" en el ámbito de la cirugía, este se basa en la hipótesis de que, si las herramientas no forzaran la posición de los cirujanos, estos mantendrían posiciones más favorables y cercanas al rango de posiciones neutras durante los procesos laparoscópicos. Los beneficios de este concepto han sido demostrados por medio de análisis de movimiento y de electromiografía de superficie, los cuales indican que la "Libertad Postural" es causante de un claro aumento de las posiciones neutras y de la reducción de la fatiga muscular, y han sido testeados por cirujanos en entornos simulados, los cuales encuentran beneficioso utilizar la "Libertad Postural" como característica base de este nuevo diseño de herramienta laparoscópica. En la sección final de este trabajo se propone un diseño que implementa el concepto de libertad postura con el cual se reduciría la fatiga muscular y los problemas musculo esqueléticos asociados a la práctica laparoscópica. Este diseño tiene la característica de actuar como una nueva sección del brazo, siendo una articulación que soporta los giros y grandes desplazamientos que normalmente tienen que desarrollar los brazos del cirujano. Además, esta solución es económica y fácil de fabricar, lo cual permitiría su uso por cirujanos de todo el mundo.
[CAT] La cirurgia laparoscòpia està considerada un dels principals avanços quirúrgics en les últimes dècades. Aquesta tècnica ha demostrat nombrosos avantatges comparats amb la cirurgia convencional oberta i ha sigut extensament usada per a processos quirúrgics en l'àrea abdominal. Per al pacient, la cirurgia laparoscòpica suposa diversos avantatges, com per exemple menor dolor post operatiu, temps de recuperació menors, menor risc d'infecció, o reducció del trauma. Per al cirurgià en canvi, la situació és completament diferent, aquesta pràctica requereix major esforç, concentració i estrés mental que la pràctica convencional oberta. A més força al cirurgià a adoptar posicions no-neutres en falanges, mans, nines, i braços. Aquestes postures no-neutres són la principal causa de fatiga muscular i augmenten el risc de problemes musculo-esquelètics. Aquests problemes han sigut àmpliament estudiats per diferents equips d'investigació, els quals estan tractant de millorar l'experiència del cirurgià en el quiròfan. L'enfocament utilitzat en aquest estudi és diferent de l'utilitzat anteriorment per la majoria d'aquests equips, els quals solen proposes solucions basades en canvis ergonòmics amb la intenció de millorar la geometria del mànec de pistola convencional, ja que es considera ergonòmicament deficient. El problema amb aquest enfocament, és que les deficiències no es troben únicament en el mànec, sinó en la utilització d'un punt d'entrada fix que força als cirurgians a mantindre posicions desfavorables. En aquest treball, s'introdueix el concepte "Llibertat Postural" en l'àmbit de la cirurgia, aquest es basa en la hipòtesi que, si les eines no forçaren la posició dels cirurgians, aquests mantindrien posicions més favorables i pròximes al rang de posicions neutres durant els processos laparoscòpics. Els beneficis d'aquest concepte han sigut demostrats per mitjà d'anàlisi de moviment i de electromiografía de superfície, els quals indiquen que la "Llibertat Postural" és causant d'un clar augment de les posicions neutres i de la reducció de la fatiga muscular, i han sigut testats per cirurgians en entorns simulats, els quals troben beneficiós utilitzar la "Llibertat Postural" com a característica base d'aquest nou disseny d'eina laparoscòpica. En la secció final d'aquest treball es proposa un disseny que implementa el concepte de llibertat postura amb el qual es reduiria la fatiga muscular i els problemes *musculo esquelètics associats a la pràctica laparoscòpica. Aquest disseny té la característica d'actuar com una nova secció del braç, sent una articulació que suporta els girs i grans desplaçaments que normalment han de desenvolupar els braços del cirurgià. A més, aquesta solució és econòmica i fàcil de fabricar, la qual cosa permetria el seu ús per cirurgians de tot el món.
[EN] Laparoscopic surgery is considered one of the main surgical advances in the last decades, this technique has demonstrated numerous advantages compared to open conventional surgery and it is widely used in abdominal procedures around the world. For the patient, laparoscopic surgery suppose less post-operative pain, shorter recovery time, lower risk of infection, and reduction of the trauma among other benefits. For the surgeon, the situation is completely different, this practice requires more effort, concentration and mental stress than conventional open procedures. It forces the surgeon to adopt non-neutral postures with phalanges, hands, wrists, and arms being this non-neutral postures the main cause of muscular fatigue and high risk of musculoskeletal disorders. The poor ergonomic postures accelerate muscle fatigue and pain because, outside the neutral range, muscles require more energy to generate the same contractile force than in neutral position. This increase of muscular fatigue is associated with the potential to commit errors that may harm the patient during the surgery. Because this problem is widely studied and different research centers are already trying to improve their surgeons experience in the operation room, the approach used during this work is different than most of the ones presented in previous works. Generally, the solutions proposed are based on ergonomic changes in the handle shape of the instrument, because the conventional pistol-grip handle is considered ergonomically poor. But the problem is not only in the shape of the handle but also in the fixed point of entrance that force the positions for the surgeon despite the handle¿s shape. In this work, the concept of postural freedom in laparoscopic surgery is introduced and evaluated. The postural freedom concept is based on the hypothesis that the surgeon involuntarily would maintain neutral postures if the instrument does not force him or her to reach extreme position with the upper limbs. The benefits of this concept has been demonstrated, by means of electromyography and motion capture. It reduces the localized muscular fatigue and increases the number of neutral postures during laparoscopic simulations. In the final section it is proposed a design that implements the postural freedom concept with, according on the results, the potential to reduce the localized muscular fatigue and the musculoskeletal problems associated to the practice. The design proposed here acts as a new section on the arm, being an articulation that support the turns and big displacements that currently suffer the surgeon¿s body. The solution is affordable and easy to manufacture and could be used by surgeons worldwide.
Pace Bedetti, HM. (2019). The effect of "Postural Freedom" in laparoscopic surgery [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/122312
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Livres sur le sujet "MIS devices"

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Esposito, Peter M. Sean mis discipulos. Cincinnati, Ohio : RCL Benziger, 2014.

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Franke, Jörg, dir. Three-Dimensional Molded Interconnect Devices (3D-MID). München : Carl Hanser Verlag GmbH & Co. KG, 2014. http://dx.doi.org/10.3139/9781569905524.

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Zheng, L. Electroluminescence of mid-infrared III-V devices. Manchester : UMIST, 1997.

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Franke, Jörg. Three-Dimensional Molded Interconnect Devices (3D-MID). München, Germany : Carl Hanser Verlag GmbH & Co. KG, 2014. http://dx.doi.org/10.1007/978-1-56990-552-4.

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Kawasaki, Tōru, Takeo Nakagawa et Tetsuo Yumoto. MID (shashutsu seikei kairo buhin). Tōkyō : Shīemushī, 1997.

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Niederhuber, John E. Totally Implantable Venous Access Devices : Management in Mid- and Long-term Clinical Setting. Milano : Springer Milan, 2012.

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International Workshop on Advanced Motion Control (4th 1996 Mie University). AMC '96-Mie : 1996 4th International Workshop on Advanced Motion Control : proceedings, March 18-21, 1996, Mie University, Tsu-City, Mie-Pref., Japan. [New York] : Institute of Electrical and Electronics Engineers, 1996.

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Jörg, Franke. Three-dimensional molded interconnect devices (3D-MID) : Materials, manufacturing, assembly, and applications for injection molded circuit carriers. Munich : Hanser Publishers, 2014.

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Sturdivant, Rick. Microwave and millimeter-wave electronic packaging. Boston : Artech House, 2014.

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Ditzian, Jan L. MCS 2 database embedded training : Procedural findings for command and control systems. Alexandria, VA : U.S. Army Research Institute for the Behavioral and Social Sciences, 1989.

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Chapitres de livres sur le sujet "MIS devices"

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Lee-Ong, Alembert, et Alfred Allen Buenafe. « Instrumentations and Access Devices ». Dans Mastering Endo-Laparoscopic and Thoracoscopic Surgery, 51–59. Singapore : Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3755-2_9.

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AbstractMinimally Invasive Surgery (MIS) instruments are patterned after conventional hand instruments to perform similar specific functions; they are designed to pass and perform through small diameter ports and at a distance to the target tissues. The development of instruments has evolved since the early period of MIS, starting from the use of rudimentary gynecologic instruments; at that time. Gynecology was the only specialty widely performing laparoscopic procedures. The evolution in design, ergonomics, and variety has been pivotal for advancing endo-laparoscopic surgery to perform more complex surgical procedures with safety and better outcome. Various evolving concepts of MIS like Single-site or reduced Surgery, Natural Orifice Transluminal Endoscopic Surgery (NOTES), Needlescopic Surgery, and Robotic-assisted Surgery have also pushed the development of features such as articulation control, pre-bent configuration, smaller diameter, and robotic instruments to meet specific needs.
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Faraz, Ali, et Shahram Payandeh. « Automated Devices ». Dans Engineering Approaches to Mechanical and Robotic Design for Minimally Invasive Surgery (MIS), 57–71. Boston, MA : Springer US, 2000. http://dx.doi.org/10.1007/978-1-4615-4409-8_4.

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Lile, Derek L. « Interfacial Constraints on III-V Compound MIS Devices ». Dans Physics and Chemistry of III-V Compound Semiconductor Interfaces, 327–401. Boston, MA : Springer US, 1985. http://dx.doi.org/10.1007/978-1-4684-4835-1_6.

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Landi, Alessandro, Fabrizio Gregori, Nicola Marotta et Roberto Delfini. « New Techniques and MIS : The Interspinous Fixation Devices ». Dans Modern Thoraco-Lumbar Implants for Spinal Fusion, 127–42. Cham : Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-60143-4_11.

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Mabrook, Mohammed Fadhil, Daniel Kolb, Christopher Pearson, D. A. Zeze et M. C. Petty. « Fabrication and Characterisation of MIS Organic Memory Devices ». Dans Advances in Science and Technology, 474–79. Stafa : Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908158-11-7.474.

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Burroughes, J. H., et R. H. Friend. « Field-Induced Charges in Polyacetylene MIS and MISFET Devices ». Dans New Horizons in Low-Dimensional Electron Systems, 377–400. Dordrecht : Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-3190-2_25.

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Lawenko, Michael M., et Angelica Feliz Versoza-Delgado. « Image Systems in Endo-Laparoscopic Surgery ». Dans Mastering Endo-Laparoscopic and Thoracoscopic Surgery, 7–14. Singapore : Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3755-2_2.

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AbstractThe field of minimally invasive surgery (MIS) has seen tremendous growth and advancement since its advent in the 1980s. New procedures, MIS techniques, and instruments are evolving regularly which makes it important for surgeons to be familiar with these developments. MIS is a technologically dependent specialty and every surgeon is expected to have good background knowledge of new instruments and imaging systems. Endo-laparoscopic surgery is conducted using an array of imaging devices that are all interconnected.
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Slacheva, G., et I. Yanchev. « Path-Integral Calculation of the Electron Density of States in Mis-Structures ». Dans Devices Based on Low-Dimensional Semiconductor Structures, 189–98. Dordrecht : Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0289-3_14.

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Tralle, I. E. « Dynamic Quantum Wells and Quantum Dots in Mis-Microstructure with Periodic Field Electrodes ». Dans Frontiers in Nanoscale Science of Micron/Submicron Devices, 495–505. Dordrecht : Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1778-1_35.

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Lee-Ong, Alembert, et Alfred Allen Buenafe. « Operating Room Setup and Patient Positioning in MIS ». Dans Mastering Endo-Laparoscopic and Thoracoscopic Surgery, 61–67. Singapore : Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3755-2_10.

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AbstractCrucial in any surgery, the performance and the outcome depend not only on the surgeon’s skills and patient preparation but also on the setup of the operating room (OR) and positioning of the patients. In endo-laparoscopic surgery, we work with technology like cameras, monitors, insufflators, energy devices, and more. They are connected and interconnected by several cables and tubings. It is vital for patient’s and OR Staff’s safety that they be easily accessible in a fast and timely manner in case of any emergency or unexpected event. Avoid entangling of cables, or interaction between tubing and cables will make your surgery safer, elegant, and less stressful.
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Actes de conférences sur le sujet "MIS devices"

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Alba-Martin, M., T. Firmager, J. J. Atherton, M. C. Rosamond, A. J. Gallant, M. C. Petty, A. Al Ghaferi et al. « Single-walled nanotube MIS memory devices ». Dans 2011 IEEE 11th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2011. http://dx.doi.org/10.1109/nano.2011.6144530.

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Miranda, E. « Failure analysis of MIM and MIS structures using spatial statistics ». Dans 2013 Spanish Conference on Electron Devices (CDE). IEEE, 2013. http://dx.doi.org/10.1109/cde.2013.6481384.

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Vaquero-Melchor, Diego, Jorge García-Hospital, Ana M. Bernardos, Juan A. Besada et José R. Casar. « Holo-mis ». Dans MobileHCI '18 : 20th International Conference on Human-Computer Interaction with Mobile Devices and Services. New York, NY, USA : ACM, 2018. http://dx.doi.org/10.1145/3236112.3236165.

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Maeda, Narihiko, Masanobu Hiroki, Noriyuki Watanabe, Yasuhiro Oda, Haruki Yokoyama, Takuma Yagi, Toshiki Makimoto, Takatomo Enoki et Takashi Kobayashi. « Insulator engineering in GaN-based MIS HFETs ». Dans Integrated Optoelectronic Devices 2007, sous la direction de Hadis Morkoc et Cole W. Litton. SPIE, 2007. http://dx.doi.org/10.1117/12.703659.

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Rziga, Faten Ouaja, Khaoula Mbarek, Sami Ghedira et Kamel Besbes. « A general overview of memristor devices ». Dans 2017 International Conference on Engineering & MIS (ICEMIS). IEEE, 2017. http://dx.doi.org/10.1109/icemis.2017.8273019.

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Mbarek, Khaoula, Faten Ouaja Rziga, Sami Ghedira et Kamel Besbes. « Characterization, and modeling of memristor devices ». Dans 2017 International Conference on Engineering & MIS (ICEMIS). IEEE, 2017. http://dx.doi.org/10.1109/icemis.2017.8273032.

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Korolevych, Lyubomyr, et Alexander Borisov. « Cerium dioxide thin films in silicon MIS devices ». Dans 2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO). IEEE, 2019. http://dx.doi.org/10.1109/elnano.2019.8783344.

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Marino, Fabio Alessio, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You et al. « Breakdown investigation in GaN-based MIS-HEMT devices ». Dans ESSDERC 2014 - 44th European Solid State Device Research Conference. IEEE, 2014. http://dx.doi.org/10.1109/essderc.2014.6948839.

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Lee, Tae-Seok, Y. T. Jeoung, Hyun Kyu Kim, Jae Mook Kim, Jinhan Song, S. Y. Ann, Ji Y. Lee et al. « Electrical properties of MIS devices on CdZnTe/HgCdTe ». Dans SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, sous la direction de Bjorn F. Andresen et Marija Strojnik. SPIE, 1998. http://dx.doi.org/10.1117/12.328083.

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Rawal, Yaksh, Prashanth P. Manik, Piyush Bhatt, Anoop C., Saurabh Lodha, Swaroop Ganguly, Maryam Shojaei Baghini et Debashree Burman. « Performance comparison of MIM and MIS diodes for energy harvesting applications ». Dans 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2014. http://dx.doi.org/10.1109/edssc.2014.7061102.

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Rapports d'organisations sur le sujet "MIS devices"

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Robinson, Dr Peter. PR761-235100-R01 Minimally Intrusive Multi Sensor for Inline Deployment. Chantilly, Virginia : Pipeline Research Council International, Inc. (PRCI), juillet 2024. http://dx.doi.org/10.55274/r0000075.

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This report describes the design and construction of novel sensor bodies which will be used as Minimally Invasive Tools (MIT) devices. The overarching requirement for MIT devices is that they are capable of being introduced into a pipe through existing entry points, such as existing NPT threaded sensor locations, small bore valve take-offs and full bore valves with access (if available).
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Channabasappa, S., W. De Ketelaere et E. Nechamkin. Management Event Management Information Base (MIB) for PacketCable- and IPCablecom-Compliant Devices. RFC Editor, avril 2009. http://dx.doi.org/10.17487/rfc5428.

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Byer, Robert L. Diffusion-Bonded Nonlinear Materials for Practical Quasi-Phase-Matched Mid-IR Devices. Fort Belvoir, VA : Defense Technical Information Center, avril 1996. http://dx.doi.org/10.21236/ada307177.

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Fitzgerald, Eugene A. Device Quality, High Mis-Matched Semi Conductor Materials Grown on Si Substrates Using Unique Dislocation Engineering. Fort Belvoir, VA : Defense Technical Information Center, juin 2002. http://dx.doi.org/10.21236/ada414436.

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St., M., dir. DOCSIS Cable Device MIB Cable Device Management Information Base for DOCSIS compliant Cable Modems and Cable Modem Termination Systems. RFC Editor, août 1999. http://dx.doi.org/10.17487/rfc2669.

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CALS TEST NETWORK WRIGHT-PATTERSON AFB OH. Technical IGES Transfer Using : Computing Devices' Data. MIL-D-28000A (IGES). Quick Short Test Report. Fort Belvoir, VA : Defense Technical Information Center, novembre 1993. http://dx.doi.org/10.21236/ada312857.

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CALS TEST NETWORK WRIGHT-PATTERSON AFB OH. Technical Illustration Transfer Using : Computing Devices Canada's Data MIL-D-28OOOA (IGES) Quick Short Test Report. Fort Belvoir, VA : Defense Technical Information Center, mars 1994. http://dx.doi.org/10.21236/ada312354.

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BIZIKOEVA, L. S., et M. I. BALIKOEVA. SOMERSET MAUGHAM - MASTER OF CREATING CHARACTERS. Science and Innovation Center Publishing House, 2021. http://dx.doi.org/10.12731/2077-1770-2021-13-4-2-111-121.

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Purpose. The goal of the present article is to study various means of creating a literary character. Analyzing the creative work of a famous English writer William Somerset Maugham and basing on the story «The Kite» an attempt is made to scrutinize Maugham’s peculiar style and lexico-stylistic devices he employs to create the main female characters of the story «The Kite». The main methods used in the research are: the method of contextual analysis and the descriptive-analytical method. Results. The results of the research revealed that the peculiar characteristic of the protagonists of the story “The Kite” is the author’s strong presence. Portraying the characters of Missis Sunbury and Miss Bevan, Somerset Maugham pays special attention to precise description of their appearances and manner of speech. Employing various lexico-stylistic devices, S. Maugham creates extraordinarily vivid characters. Practical implications. The received results can be used in teaching Stylistics of the English language, stylistic analysis of the text as well as theory and practice of translation.
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Zanker. L52361 Smart USM Diagnostics - Phase I. Chantilly, Virginia : Pipeline Research Council International, Inc. (PRCI), avril 2007. http://dx.doi.org/10.55274/r0010938.

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It has long been known that all ultrasonic flow meters, especially those that exploit multiple paths to achieve higher accuracies are capable of extensive self-diagnosis. However, each manufacturer of the technology has tended to develop diagnostic tools specific to each particular device. This has led to a confusing mix of offerings that are not transportable between meters, and whose interpretations are not always consistent.
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DeSantis, John, et Jeffery Roesler. Performance Evaluation of Stabilized Support Layers for Concrete Pavements. Illinois Center for Transportation, février 2022. http://dx.doi.org/10.36501/0197-9191/22-003.

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A research investigation was conducted on the erosion potential of stabilized subbases under concrete pavements and asphalt layers supporting concrete overlays. Through field surveys and testing in Illinois, this project evaluated if existing concrete pavements with stabilized subbases and concrete overlays were exhibiting potential erosion of the underlying support layer. The field evaluation testing included falling weight deflectometer testing, distress surveys, coring, and ultrasonic tomography scanning. A laboratory performance test was also established using the Hamburg wheel-tracking device to assess the erodibility of the various stabilized subbase layers for new construction and existing asphalt layers available for a concrete overlay. The analyzed field test results were coupled together with the laboratory performance testing to provide recommendations for updating the Illinois Department of Transportation’s “Bureau of Design and Environment Manual” guidance. No changes were recommended for hot-mix asphalt stabilized subbases, but testing using the Hamburg wheel-tracking device should be considered for Portland cement concrete stabilized support layers (e.g., CAM II) under concrete pavements. For testing of asphalt support layers for concrete pavement overlays, the Hamburg wheel-tracking device is recommended with performance criteria similar to flexible pavements for appropriate functional classes.
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