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Auteur : Grafiati
Publié le 8 juin 2024

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1

Yamashita, Yoshiyuki, Jingmin Tang, Yusuke Hashimote et Tomohiro Matsushita. « Atomic Structures and Chemical states of active and inactive dopants in GaN ». ECS Transactions 112, no 2 (29 septembre 2023) : 67–75. http://dx.doi.org/10.1149/11202.0067ecst.

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We investigated atomic structures and chemical states of active and inactive dopant sites for Mg- and Si- doped in GaN using photoelectron holography and X-ray absorption near edge structure. In the case of Mg-doped GaN, we found that a Mg atom substituting a Ga atom (MgGa) is an active dopant site in GaN whereas MgGa with two H atoms is an inactive dopant site in GaN. We found that a Si atom substituting a Ga atom is an active dopant site in Si-doped GaN whereas Si3N4 is an inactive dopant site in GaN.
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2

Siladie, Alexandra-Madalina, Lynda Amichi, Nicolas Mollard, Isabelle Mouton, Bastien Bonef, Catherine Bougerol, Adeline Grenier et al. « Dopant radial inhomogeneity in Mg-doped GaN nanowires ». Nanotechnology 29, no 25 (25 avril 2018) : 255706. http://dx.doi.org/10.1088/1361-6528/aabbd6.

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3

Huang, Xiaopeng, Feng Liang, Yuanchao Du, Keyu Zhang, Yaochun Yao et Yongnian Dai. « Optimization of the Process Parameters for the Synthesis of LiFe1−x−yMgxTiyPO4/C Cathode Material Using Response Surface Methodology ». Nano 11, no 11 (20 octobre 2016) : 1650122. http://dx.doi.org/10.1142/s1793292016501228.

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A systematic approach was used to develop the empirical model for optimizing the preparation process parameters for the synthesis of LiFe[Formula: see text]MgxTiyPO4/C composite cathode material. For optimizing the production parameters, response surface methodology (RSM) was applied to develop a linear regression model and maximize the discharge capacity. Analysis of the variance (ANOVA) showed that the three variables (Mg-dopant, Ti-dopant and sintering temperature) and the interactions among them were significant factors. Response surfaces formed by RSM illustrated that the doping of Mg and Ti on Fe site had obviously synergistic effect on the discharge capacity. In the process optimization, the parameters were 2.9% of Mg-dopant, 3.0% of Ti-dopant and sintering temperature of 678.5[Formula: see text]C, corresponding to a discharge capacity of 136.7[Formula: see text]mAh/g predicted by the model. This predicted value was in good agreement with the actual value (136.4[Formula: see text]mAh/g) by confirmatory experiment. The optimized LiFe[Formula: see text]Mg[Formula: see text]Ti[Formula: see text]PO4/C composite exhibits a good rate performance and cycling stability due to the enhancement of electronic conductivity and lithium diffusion coefficient ([Formula: see text][Formula: see text]cm2/s) by the co-doping of Mg and Ti ions.
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Schmidt, Th, M. Siebert, J. I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T. L. Lee et al. « Mg and Si dopant incorporation and segregation in GaN ». physica status solidi (b) 248, no 8 (7 mars 2011) : 1810–21. http://dx.doi.org/10.1002/pssb.201046531.

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5

Winda Rahmalia, Intan Syahbanu, Nurlina, Ayu Widya Sari et Septiani. « Synthesis of Mg-doped TiO2 Using a Hydrothermal Method as Photoanode on Bixin-Sensitized Solar Cell ». Jurnal Riset Kimia 14, no 2 (17 octobre 2023) : 198–208. http://dx.doi.org/10.25077/jrk.v14i2.622.

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Titanium dioxide (TiO2) with magnesium (Mg) doping for dye-sensitized solar cell (DSSC) photoanode application has been synthesized. DSSC components used in this study were photosensitizer (bixin), electrolyte (), cathode (platinum), and photoanode (Mg-TiO2). This research aims to determine the characteristics of Mg-doped TiO2 photoanode with variations in dopant concentration based on the results of XRD and DR/UV-Vis analysis, as well as to determine the maximum efficiency conversion energy of DSSC using Mg-doped TiO2 and undoped TiO2 as photoanodes. The synthesis of TiO2 and Mg-TiO2 was carried out using the hydrothermal method with variations in the concentration of Mg dopant of 0, 0.5, 1, and 2% based on the molar ratio. The presenceof 2% of Mg in anatase TiO2 paste decreased the TiO2 band gap from 3.15 to 2.60 eV. Analysis results show that adding Mg dopant decreased the crystal size. Mg dopants on TiO2 could also form new energy levels, which reduced the band gap energy of TiO2. In addition, the increased concentration of Mg dopants also shifted the absorption capacity of TiO2 from the ultra-violet (UV) wavelengths region to the visible light area. The maximum energy conversion efficiency of the DSSCs with Mg-doped TiO2 photoanode of 0.5, 1, and 2% are 0.045; 0.070, and 0.172%, respectively, where these three efficiency values are higher than undoped TiO2 (0.017%). The results proved that the presence of Mg dopants on the TiO2 photoanode can increase the efficiency of DSSC.
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6

Kushwaha, Amanendra K., Manoranjan Misra et Pradeep L. Menezes. « Effect of Magnesium Dopant on the Grain Boundary Stability of Nanocrystalline Aluminum Powders during Cryomilling ». Crystals 13, no 3 (21 mars 2023) : 541. http://dx.doi.org/10.3390/cryst13030541.

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In this investigation, pure aluminum (Al) powders were cryomilled with and without magnesium dopants to study (a) the effect of cryomilling time on the crystallite size and (b) the effect of magnesium dopant on Al to achieve grain boundary stability. The cryomilling process was carried out using liquid nitrogen for different durations. The characterization of the cryomilled powders was carried out using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD) to understand the particle morphology, crystallite size, and elemental composition. The results demonstrated that the size of the crystallites in both Al and Mg-doped Al powders reduces as the cryomilling duration increases. The results also indicated that the preferential segregation of Mg dopant at the grain boundaries of Al provides stability to the cryomilled powders at elevated temperatures. This article discusses the mechanism for the changes in crystallite size and the effect of the Mg dopant on the grain boundary stability in Al powders.
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7

Ahmed, Duha S., Noor Q. Ali et Ali A. Taha. « The Variation Effect of Mg-doped NPs Prepared by Sol-Gel Method on its Structural Properties and Biological Activities ». Journal of Physics : Conference Series 2114, no 1 (1 décembre 2021) : 012004. http://dx.doi.org/10.1088/1742-6596/2114/1/012004.

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Abstract In this paper, we reported the synthesis of NiO NPs and Mg doped-NiO NPs using the facile sol-gel method. Besides, the influence of the variation of Mg dopant on the structural, morphological and optical properties of the prepared Mg-NiO NPs was studied. The synthesized Mg-NiO NPs nanoparticles were characterized by X-Ray Diffraction Analysis (XRD), Energy Dispersive X-ray Spectroscopy (EDS), Fourier-Transform Infrared Spectroscopy (FTIR), Field-Emission Scanning Electron Microscopy (FE-SEM), and UV-Vis spectrophotometer. The X-ray diffraction confirmed the formation of the cubic structure of Mg doped-NiO NPs after doping with the magnesium. The increase in the crystal size was observed with the increase in the concentration of the Mg dopant element. The FESEM images reveal the formation of nickel oxide through the appearance of spherical clusters, while the hybrids appear as wrinkled surface covered with spherical particles of magnesium. The UV-Vis spectrum showed a shift towards shorter wavelengths with an increase in the concentration of the Mg dopant element due to the quantum confinement effect. The hemolysis activity study showed that NiO NPs had a low hemolysis percentage of 1.47% and increased with increasing concentration. While, increasing of the RBC hemolysis (5.9%) after NiO doped with Mg. The antibacterial activity was studied against S. aureus and P. aeruginosa bacteria, and indicated the highest growth inhibition zones of Mg-doped NiO NPs as compared with NiO NPs against of Staphylococcus aureus and Pseudomonas aeruginosa, respectively.
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8

Li, Jinchai, et Junyong Kang. « Band engineering in Al0.5Ga0.5N∕GaN superlattice by modulating Mg dopant ». Applied Physics Letters 91, no 15 (8 octobre 2007) : 152106. http://dx.doi.org/10.1063/1.2798589.

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Grillot, P. N., S. A. Stockman, J. W. Huang et Y. L. Chang. « Dopant interactions and Mg segregation in (AlxGa1−x)0.5In0.5P heterostructures ». Physica B : Condensed Matter 308-310 (décembre 2001) : 888–90. http://dx.doi.org/10.1016/s0921-4526(01)00950-4.

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10

Jain, P., J. Lang, N. Y. Skryabina, D. Fruchart, S. F. Santos, K. Binder, T. Klassen et J. Huot. « MgH2 as dopant for improved activation of commercial Mg ingot ». Journal of Alloys and Compounds 575 (octobre 2013) : 364–69. http://dx.doi.org/10.1016/j.jallcom.2013.05.099.

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11

Thonglem, Sutatip, Somnuk Sirisoonthorn, Kamonpan Pengpat, Gobwute Rujijanagul, Sukum Eitssayeam, Uraiwan Intatha et Tawee Tunkasiri. « Properties of Mg Doped ZnO Films Prepared by Ultrasonic Spray Pyrolysis ». Applied Mechanics and Materials 804 (octobre 2015) : 88–92. http://dx.doi.org/10.4028/www.scientific.net/amm.804.88.

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This work is focused on the preparation of Mg doped ZnO films by ultrasonic spray pyrolysis and investigated the physical, optical and electrical properties of the films. These films were prepared from 0.02 M of Zn (CH3OO)2.2H2O and MgCl2 was used for doping. The atomic percentage ratio of Mg/Zn was varied from 0 to 9 at.%. The crystalline phase of all films was identified as ZnO polycrystalline structure with preferred orientation along the (002) plane. While, the grain shape of ZnO film was irregular shape, this shape changed to spherical shape with doped Mg concentration and changed again to rod shape with doped Mg concentration to 9 at.%. Although, the Mg dopant affects the shape of ZnO films but don’t affect resistivity of the films. Moreover, the Mg dopant shifts the absorption edge in transmittance spectra of films to lower wavelength and increases band gap of the films.
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12

İskenderoğlu, Demet, et Harun Güney. « Effect of Mg dopant on SnO2 thin films grown by spray pyrolysis technique ». Modern Physics Letters B 33, no 04 (10 février 2019) : 1950030. http://dx.doi.org/10.1142/s0217984919500301.

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The undoped and magnesium (Mg)-doped Tin (IV) oxide (SnO2) thin films were grown on glass substrate by spray pyrolysis technique. In order to observe the effect on the optical, structural, morphological, and hydrogen (H2) gas answer properties of SnO2 by Mg doping, X-ray diffractometer (XRD), ultraviolet–visible (UV) spectrometer, scanning electron microscope (SEM) and hydrogen (H2) gas, measurements were taken. The absorption measurements of undoped and Mg-doped SnO2 thin films demonstrated that band gaps varied with the changing Mg dopant ratio and this variation may be from Burstein–Moss (BM) effect. XRD measurements showed that the samples were tetragonal structures and have (110), (101), (200), (211), (220), (310) planes. The surface morphology of SnO2 showed that samples was affected considerably by Mg dopant. The H2 gas sensor response improves with the increase of 1%, 2% and 3% Mg doping ratio in SnO2.
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13

Goorsky, Mark S., Michael Evan Liao, Kenny Huynh, Yekan Wang, James Tweedie, Zlatko Sitar, Ramon Collazo, Kacper Sierakowski, Michal Bockowski et Xianrong Huang. « (Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation ». ECS Meeting Abstracts MA2023-02, no 35 (22 décembre 2023) : 1691. http://dx.doi.org/10.1149/ma2023-02351691mtgabs.

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Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of systems with reduced size and weight. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers. Mg-implanted homoepitaxial GaN annealed at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Earlier work addressing electrical measurements of these types of samples showed that annealing at ~1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (1400 °C) annealing cycles to activate Mg in GaN.
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14

Wu, Jing, Gui Gui Xu, Ying Bin Lin et Zhi Gao Huang. « The Role of Na and Mg Doping on the Electronic Conductivity of LiFePO4 : First-Principles Investigations ». Advanced Materials Research 629 (décembre 2012) : 64–69. http://dx.doi.org/10.4028/www.scientific.net/amr.629.64.

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The effects of Na and Mg doped Li site for Li1-xMxFePO4 have been studied using first-principles within GGA+U. Elastic band method has been used to calculate the activation energy for Li diffusion. The calculated results mean that, the band gaps of the Na and Mg doped Li1-xMxFePO4 are both narrow than that of the un-doped. Especially Mg dopant gives rise to much narrow gap, which is attributed to the appearance of impurity level in the forbidden band of un-doped LiFePO4. The calculated activation energies for LiFePO4, Li0.875Na0.125Subscript textFePO4, and Li0.875Mg0.125FePO4 are 0.33eV, 0.31 eV, and 0.15 eV, respectively. From the calculated results of band gap and activation energy, we can find that Mg dopant will benefit for the hopping of electrons and the improvement of the electronic conductivity for LiFePO4.
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15

Qiu, Xinjia, Yingda Chen, Enze Han, Zesheng Lv, Zhiyuan Song et Hao Jiang. « High doping efficiency in p-type Al-rich AlGaN by modifying the Mg doping planes ». Materials Advances 1, no 1 (2020) : 77–85. http://dx.doi.org/10.1039/d0ma00026d.

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Chaika, Mykhailo, Giulia Mancardi, Robert Tomala, Wiesław Stek et Oleh Vovk. « Effects of divalent dopants on the microstructure and conversion efficiency of Cr4+ ions in Cr,Me:YAG (Me - Ca, Mg, Ca/Mg) transparent ceramics ». Processing and Application of Ceramics 14, no 1 (2020) : 83–89. http://dx.doi.org/10.2298/pac2001083c.

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The efficiency of Cr4+:YAG is directly proportional to the transparency and concentration of Cr4+ which can be tuned by changing the divalent dopant. The aim of this study was to investigate the influence of different kinds of divalent dopants on the properties of Cr,Me:YAG (Me = Ca, Mg or Ca/Mg) ceramics made by solidstate sintering in vacuum. Pure YAG phases with an in-line transmittance of 80% at 1064 nm were prepared. It was revealed that the Cr4+ concentration is directly proportional to the concentration of divalent dopants and it does not depend on the type of dopant. Our experiment proves that the efficiency of high optical quality Cr4+:YAG ceramics prepared by sintering does not change when different kinds of divalent additives are used.
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17

Salina, M., R. Ahmad, A. B. Suriani et M. Rusop. « Bandgap Alteration of Transparent Zinc Oxide Thin Film with Mg Dopant ». Transactions on Electrical and Electronic Materials 13, no 2 (25 avril 2012) : 64–68. http://dx.doi.org/10.4313/teem.2012.13.2.64.

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18

Licata, Olivia G., Scott Broderick, Emma Rocco, Fatemeh Shahedipour-Sandvik et Baishakhi Mazumder. « Dopant-defect interactions in Mg-doped GaN via atom probe tomography ». Applied Physics Letters 119, no 3 (19 juillet 2021) : 032102. http://dx.doi.org/10.1063/5.0061153.

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Laleyan, David Arto, Songrui Zhao, Steffi Y. Woo, Hong Nhung Tran, Huy Binh Le, Thomas Szkopek, Hong Guo, Gianluigi A. Botton et Zetian Mi. « AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics ». Nano Letters 17, no 6 (8 mai 2017) : 3738–43. http://dx.doi.org/10.1021/acs.nanolett.7b01068.

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20

Sinha, M. K., D. Basu, S. Chatterjee et M. K. Basu. « Effect of dopant concentration on the dilation behaviour of Mg-PSZ ». Journal of Materials Science Letters 10, no 22 (1991) : 1352–55. http://dx.doi.org/10.1007/bf00722659.

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21

Saragih, Albert Daniel, et Dong-Hau Kuo. « Investigation of Mg dopant in Cu2SnSe3 thin films for photovoltaic applications ». Journal of Alloys and Compounds 683 (octobre 2016) : 542–46. http://dx.doi.org/10.1016/j.jallcom.2016.05.085.

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22

Paszkiewicz, B., R. Paszkiewicz, A. Szyszka, M. Wosko, W. Macherzynski, M. Tlaczala, R. Kudrawiec et al. « Study of the activation process of Mg dopant in GaN:Mg layers ». physica status solidi (c) 3, no 3 (mars 2006) : 579–84. http://dx.doi.org/10.1002/pssc.200564121.

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23

Sun, Xiaoying, Xinyu Li, Yue Liu, Zhan Yu, Bo Li et Zhen Zhao. « The C-H Bond Activation Triggered by Subsurface Mo Dopant on MgO Catalyst in Oxidative Coupling of Methane ». Catalysts 12, no 10 (20 septembre 2022) : 1083. http://dx.doi.org/10.3390/catal12101083.

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In this work, density functional theory calculations are performed to explore the unique role of Mo dopant on MgO in oxidative coupling of methane. It is revealed that subsurface Mo dopant significantly enhanced the adsorption and activation of oxygen molecules. The combination of adsorbed oxygen and surface Mg exhibited a balanced activity for C-H bond activation and release of methyl radical which paves the way to activate methane with a promising yield.
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24

Weber, W. J., C. W. Griffin et J. L. Bates. « Electrical and thermal transport properties of the Y1 − x Mx CrO3 system ». Journal of Materials Research 1, no 5 (octobre 1986) : 675–84. http://dx.doi.org/10.1557/jmr.1986.0675.

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The effects of substituting divalent metal ions (Mg, Ca, Sr, Ba) for Y in YCrO3 were investigated by electrical conductivity, Seebeck coefficient, and thermal conductivity measurements. The electrical conductivity results were consistent with the hopping-type conduction of a temperature-independent concentration of small polarons, with measured activation energies of 0.18-0.26 eV. The Seebeck coefficient increased nearly linearly with temperature and indicated p-type conductivity. Both electrical conductivity and Seebeck coefficient results show a strong dependence on dopant size (ionic radius) and indicate that the highest carrier concentrations were associated with Ca as the dopant, which is attributed to the similar ionic radii of Ca2+ and Y3+. The thermal conductivity decreased slightly with temperature and dopant concentration.
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Thonglem, Sutatip, Chavalit Suksri, Kamonpan Pengpat, Gobwute Rujijanagul, Sukum Eitssayeam, Uraiwan Intatha et Tawee Tunkasiri. « Tuning the Band Gap of ZnO Thin Films by Mg Doping ». Key Engineering Materials 690 (mai 2016) : 131–36. http://dx.doi.org/10.4028/www.scientific.net/kem.690.131.

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Structural, morphological, optical and electrical properties of magnesium (Mg) doped zinc oxide (ZnO) films prepared by ultrasonic spray pyrolysis technique on microscope glass substrate, have been studied in terms of Mg doping content. The precursors solutions of Mg doped ZnO films were prepared from zinc acetate dihydrate (Zn (CH3OO)2⋅2H2O) and magnesium acetate tetrahydrate (CH3COO)2Mg⋅4H2O) acted as dopant. The compositions of these solutions were fixed at 0.02 M of Zn (CH3OO)2.2H2O and the atomic percentage ratio of Mg/Zn was varied from 0 to 20 atomic %. The XRD pattern of all films showed ZnO hexagonal wurtzite structure and the morphology showed homogeneous structure/texture and pinhole-free with adding Mg content. It was found that Mg2+ ions do not change conductivity of ZnO films due to the partial substitution of Zn2+ ion by the same valence Mg2+ ion. For optical properties, all films showed high transmittance over 80% and absorbance about 0.01 in visible and near infrared regions. Moreover, the Mg dopant affects on a shift of the absorption edge in transmittance spectra of the films to a lower wavelength in ultraviolet region and increases the band gap of the samples.
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Adnan, Russul M., Malak Mezher, Alaa M. Abdallah, Ramadan Awad et Mahmoud I. Khalil. « Synthesis, Characterization, and Antibacterial Activity of Mg-Doped CuO Nanoparticles ». Molecules 28, no 1 (23 décembre 2022) : 103. http://dx.doi.org/10.3390/molecules28010103.

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This study aims to investigate the effect of magnesium (Mg) doping on the characteristics and antibacterial properties of copper oxide (CuO) nanoparticles (NPs). The Mg-doped CuO NPs were fabricated by the co-precipitation method. NPs were characterized by X-ray Powder Diffraction (XRD), Transmission Electron Microscope (TEM), Energy Dispersive X-ray (EDX) analysis, Fourier Transform Infrared Spectroscopy (FTIR), and Photoluminescence (PL). Broth microdilution, agar-well diffusion, and time-kill assays were employed to assess the antibacterial activity of the NPs. XRD revealed the monoclinic structure of CuO NPs and the successful incorporation of Mg dopant to the Cu1−xMgxO NPs. TEM revealed the spherical shape of the CuO NPs. Mg doping affected the morphology of NPs and decreased their agglomeration. EDX patterns confirmed the high purity of the undoped and Mg-doped CuO NPs. FTIR analysis revealed the shifts in the Cu–O bond induced by the Mg dopant. The position, width, and intensity of the PL bands were affected as a result of Mg doping, which is an indication of vacancies. Both undoped and doped CuO NPs exhibited significant antibacterial capacities. NPs inhibited the growth of Gram-positive and Gram-negative bacteria. These results highlight the potential use of Mg-doped CuO NPs as an antibacterial agent.
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Sriyanti, Sriyanti. « Encapsulation of Alkaline Phosphatase in Mesoporous Methyl-Silica Hybrid by Sol-Gel Process ». Jurnal Kimia Sains dan Aplikasi 20, no 3 (1 octobre 2017) : 110–13. http://dx.doi.org/10.14710/jksa.20.3.110-113.

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In recent years, the sol-gel technique has attracted increasing interest as a unique approach to immobilize biomolecules for bioanalitical applications as well as biochemical and biophysical studies. In this research, encapsulation of Alkaline Phosphatase (ALP) enzyme in mesoporous methyl-silica hybrid by sol-gel process has been carried out. Mesoporous methyl-silica hybrid has been synthesis by using tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) as precursor and poly(ethylene) glycol (PEG) as a polymer dopant. The preparation of methyl-silica hybrid was carried out at various mol ratios of precursors and PEG concentration. Encapsulation was emphasized by mixing sol solution and tris-HCl buffer containing ALP. The Surface Area Analyzer analysis data showed that the pore diameter and surface area of methyl-silica hybrid tended to increase as the PEG dopant concentration increases. Result showed that ALP encapsulated in the methyl-silica hybrids with PEG dopant gave enzymatic activity as 0.112 U/mg enzyme, higher than ALP encapsulated in copolymerization of TEOS with MTES or in silica from TEOS precursor only (0.098 U/mg enzyme and 0.069 U/mg enzyme, respectively). It was shown that copolymerization of TEOS with organosilane precursor and the entrapment of polymer additives into sol-gel processed materials are useful methods for modifying the internal environment and hence the activity of biomolecules entrapped in sol-gel derived biomaterials.
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S., Rahul, Syju Thomas, Devadas K.M., Neson Varghese, Ajeesh P. Paulose, Manoj Raama Varma et Syamaprasad U. « Tackling the agglomeration of Mg 2 Si dopant in MgB 2 superconductor using cast Mg–Si alloy ». Materials Research Bulletin 93 (septembre 2017) : 296–302. http://dx.doi.org/10.1016/j.materresbull.2017.05.022.

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Mizuno, Masataka, Hideki Araki, Yasuharu Shirai, Fumiyasu Oba et Isao Tanaka. « Identification of Mg Vacancy in MgO by Positron Lifetime Measurements and First-Principles Calculations ». Defect and Diffusion Forum 242-244 (septembre 2005) : 1–8. http://dx.doi.org/10.4028/www.scientific.net/ddf.242-244.1.

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The formation of Mg vacancy induced by ultra-dilute trivalent impurities in MgO is investigated by a combination of positron lifetime measurements and first-principles calculations. The undoped MgO yields the shortest positron lifetime of 140 ps that is shorter than that of a single crystal sample. The positron lifetime of the doped samples increases with the increase of the Al dopant concentration and is saturated at around 180 ps. This result clearly indicates that the formation of Mg vacancy is induced by Al dopant. The concentration of the other trivalent impurities can be evaluated using the result of component analysis of positron lifetimes. The experimental bulk lifetime of 130 ps, which is obtained by employing trapping model, is well reproduced by the theoretical calculation using the semiconductor model. The calculated defect lifetime is about 20 ps longer than the experimental value. This may be due to the lattice relaxation around Mg vacancy associated with the trapping of positrons.
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Mohar, Rahmat Setiawan, Iwan Sugihartono, Vivi Fauzia et Akrajas Ali Umar. « Dependence of optical properties of Mg-doped ZnO nanorods on Al dopant ». Surfaces and Interfaces 19 (juin 2020) : 100518. http://dx.doi.org/10.1016/j.surfin.2020.100518.

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Meijvogel, K., A. J. J. Bos, P. Bilski et P. Olko. « Thermoluminescence emission characteristics of LiF(Mg,Cu,P) with different dopant concentrations ». Radiation Measurements 24, no 4 (octobre 1995) : 411–16. http://dx.doi.org/10.1016/1350-4487(94)00113-f.

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Yan, M. F., H. C. Ling et W. W. Rhodes. « Preparation and properties of PbO–MgO–Nb2O5 ceramics near the Pb(Mg⅓Nb⅔)O3 composition ». Journal of Materials Research 4, no 4 (août 1989) : 930–44. http://dx.doi.org/10.1557/jmr.1989.0930.

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We prepared and characterized PbO–MgO–Nb2O5 ceramics near the Pb(Mg⅓Nb⅔)O3 stoichiometric composition. We examined microstructures, sintering behavior, and phase compositions in this system and prepared several new compositions, which have a single phase perovskite structure and a high dielectric constant (28000), by low sintering temperature (950–1020 °C). These compositions have a high electrical resistivity (1013 ohm-cm), which is about 1000 times higher than those of Pb(Fe½Nb½)O3 and Pb(Fe⅔W⅓)O3 based ceramics. The new compositions can be readily prepared into a single phase perovskite without a detectable amount of pyrochlore second phase by a simple method of mixing and calcining the constituent oxide and carbonate powders. Our dielectric measurements and XRD data establish the correlation between the decrease in dielectric constant and the presence of pyrochlore second phase. The effects of PbTiO3 dopant were quantitatively measured and our data showed that at a low (10 mole %) PbTiO3 concentration, the Curie temperature increases 6.6 °C for every mole % PbTiO3 dopant in the new compositions. The dielectric constant increases from 18000 in the undoped composition to 27 100 and 29000 by a PbTiO3 dopant concentration of 5% and 10%, respectively. The maximum dissipation factor also decreases from 0.10 in the undoped composition to 0.055 in the 10% PbTiO3 doped composition. The electrical resistivity, ρ, decreases with the PbTiO3 dopant concentration, t, following the ρ = ρ0 exp (–t/t0) relation where ρ0 ≍ (9.6 ± 0.2) × 1012 Ωcm and t0 ≃ 0.044.
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SITTHICHAI, Sudarat, Anukorn PHURUANGRAT, Titipun THONGTEM et Somchai THONGTEM. « Influence of Mg dopant on photocatalytic properties of Mg-doped ZnO nanoparticles prepared by sol–gel method ». Journal of the Ceramic Society of Japan 125, no 3 (2017) : 122–24. http://dx.doi.org/10.2109/jcersj2.16202.

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Yu, Xiao Cai, Peng Fei Zhu, Kui Sheng Song, Dong Dong Hu et Qian Du. « Study on the Photocatalytic Degradation of Ammonia Nitrogen in Aquaculture Wastewater by Fe3+-Doped Nano-TiO2 under UV Irradiation ». Advanced Materials Research 476-478 (février 2012) : 2001–4. http://dx.doi.org/10.4028/www.scientific.net/amr.476-478.2001.

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The Fe3+-doped nano-TiO2 catalyst with various amounts of dopant Fe3+ irons was prepared by a sol-gel method. The products were characterized by XRD and SEM. The photocatalytic degradation of ammonia nitrogen in aquaculture wastewater was investigated by using Fe3+-doped nano-TiO2 under UV irradiation. In the experiment, the effect of Fe3+/TiO2 dosage, the ratio of dopant Fe3+, ammonia-N initial concentration, pH value, H2O2 volume concentration, and reaction time, respectively, on the removal of ammonia-N was investigated. The experimental results can be stated as follows: when the ratio of dopant Fe3+ was 0.25% wt, the dosage of Fe3+/TiO2 was 0.7 g/L, the initial concentration of ammonia-N was 10 mg/L, H2O2 volume fraction was 4 %, respectively, if the reaction time may last 4 h, the removal rate of ammonia-N was expected to reach 97.17 %.
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Mao, Xue, Ying Bai, Jianyong Yu et Bin Ding. « Insights into the flexibility of ZrMxOy (M = Na, Mg, Al) nanofibrous membranes as promising infrared stealth materials ». Dalton Transactions 45, no 15 (2016) : 6660–66. http://dx.doi.org/10.1039/c6dt00319b.

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An undersized dopant dependent brittle to flexible transition in ZrMxOy (M = Na, Mg, Al) nanofibrous membranes was revealed. Al doped zirconia nanofibrous membranes with an ultra-flexibility of 23 mN exhibit low infrared emissivity.
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Kavaliunas, Vytautas, Edvinas Krugly, Mantas Sriubas, Hidenori Mimura, Giedrius Laukaitis et Yoshinori Hatanaka. « Influence of Mg, Cu, and Ni Dopants on Amorphous TiO2 Thin Films Photocatalytic Activity ». Materials 13, no 4 (17 février 2020) : 886. http://dx.doi.org/10.3390/ma13040886.

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The present study investigates Mg (0 ÷ 17.5 wt %), Cu (0 ÷ 21 wt %) and Ni (0 ÷ 20.2 wt %) dopants (M-doped) influence on photocatalytic activity of amorphous TiO2 thin films. Magnetron sputtering was used for the deposition of M-doped TiO2 thin films. According to SEM/EDS surface analysis, the magnetron sputtering technique allows making M-doped TiO2 thin films with high uniformity and high dopant dispersion. Photocatalysis efficiency analysis was set in oxalic acid under UV irradiation. In accordance with the TOC (total organic carbon) measurements followed by the apparent rate constant (kapp) results, the dopants’ concentration peak value was dopant-dependent; for Mg/TiO2, it is 0.9% (kapp—0.01866 cm−1), for Cu/TiO2, it is 0.6% (kapp—0.02221 cm−1), and for Ni/TiO2, it is 0.5% (kapp—0.01317 cm−1). The obtained results clearly state that a concentration of dopants in TiO2 between 0.1% and 0.9% results in optimal photocatalytic activity.
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Platonenko, Alexander, Sergei Piskunov, Thomas C. K. Yang, Jurga Juodkazyte, Inta Isakoviča, Anatoli I. Popov, Diana Junisbekova, Zein Baimukhanov et Alma Dauletbekova. « Electronic Structure of Mg-, Si-, and Zn-Doped SnO2 Nanowires : Predictions from First Principles ». Materials 17, no 10 (7 mai 2024) : 2193. http://dx.doi.org/10.3390/ma17102193.

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We investigated the electronic structure of Mg-, Si-, and Zn-doped four-faceted [001]- and [110]-oriented SnO2 nanowires using first-principles calculations based on the linear combination of atomic orbitals (LCAO) method. This approach, employing atomic-centered Gaussian-type functions as a basis set, was combined with hybrid density functional theory (DFT). Our results show qualitative agreement in predicting the formation of stable point defects due to atom substitutions on the surface of the SnO2 nanowire. Doping induces substantial atomic relaxation in the nanowires, changes in the covalency of the dopant–oxygen bond, and additional charge redistribution between the dopant and nanowire. Furthermore, our calculations reveal a narrowing of the band gap resulting from the emergence of midgap states induced by the incorporated defects. This study provides insights into the altered electronic properties caused by Mg, Si, and Zn doping, contributing to the further design of SnO2 nanowires for advanced electronic, optoelectronic, photovoltaic, and photocatalytic applications.
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Liday, Jozef, Peter Vogrinčič, Ivan Hotový, Alberta Bonanni, Helmut Sitter, Tibor Lalinský, Gabriel Vanko, Vlastimil Řeháček, Juraj Breza et Gernot Ecke. « Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization ». Journal of Electrical Engineering 61, no 6 (1 novembre 2010) : 378–81. http://dx.doi.org/10.2478/v10187-010-0058-8.

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Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization Electrical characteristics and elemental depth profiles of ohmic contacts to p-GaN using Au/Ni-Mg-Ox metallization have been investigated. The objective was to examine the possibilities of increasing the charge carrier concentration in the surface region of GaN by adding Mg, thus of a p-type dopant into the Au/NiOx metallization structure. For this purpose, a Ni-Mg-Ox layer with a low concentration of Mg was deposited on p-GaN by dc reactive magnetron sputtering. The top Au layer was deposited in a similar way. The fabricated contact structures were annealed in N2. When the Ni-Mg layer in the Au/Ni-Mg-Ox/p-GaN structure was deposited in an atmosphere with a low concentration of oxygen (0.2 at%), the structure exhibited a low resistance ohmic nature. The contact resistance was lower than in the case of a Au/Ni-Ox/p-GaN structure without the Mg dopant in the metallic layer. An increase in the concentration of oxygen in the working atmosphere resulted in higher values of the contact resistance of the Au/Ni-Mg-Ox/p-GaN structure. In our opinion the ohmic nature of the contact structure is related to the existence of a metal/p-NiO/p-GaN scheme. The measured values of the contact resistance in the Au/Ni-Mg-Ox/p-GaN structure in comparison with the Au/Ni-Ox/p-GaN structure are caused by an increased charge carrier concentration in the surface region of p-GaN, which is a consequence of Mg diffusion from the Ni-Mg-Ox layer.
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Rojanasuwan, Sunit, Pakorn Prajuabwan, Annop Chanhom, Anuchit Jaruvanawat, Adirek Rangkasikorn et Jiti Nukeaw. « The Effect of the Central Metal Atom on the Structural Phase Transition of Indium Doped Metal Phthalocyanine ». Advanced Materials Research 717 (juillet 2013) : 146–52. http://dx.doi.org/10.4028/www.scientific.net/amr.717.146.

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We investigate the effect of central metal atom on the phthalocyanine (Pc) molecular crystals as intercalated with indium. As dopant, indium has physical interaction with some atom in the ring of Pc molecule and there is charge transfer between indium atom and Pc ring atom. Since In-doped Pc is a hole doping which increase positive charge carriers and the HOMO of ZnPc, CuPc, NiPc and MgPc are localized on the phthalocyanine ring, then, the central metal atom e.g. Zn, Cu, Ni and Mg are not directly involved with the charge transfer between indium dopant and their Pc molecule. The structural phase transition from α phase to β phase of ZnPc upon doping with indium is another evidence for the existing of charge transfer between dopant atom and matrix Pc molecule. A comparative experiment of optical absorption spectrum of each metal Pc reveals that the central metal atom will affect the forming of crystal structure whether will be α phase or β phase as intercalated with indium.
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40

Hsu, Cheng-Chih, Wen-Kai Ho, Chyan-Chyi Wu et Ching-Liang Dai. « The Enzymatic Doped/Undoped Poly-Silicon Nanowire Sensor for Glucose Concentration Measurement ». Sensors 23, no 6 (16 mars 2023) : 3166. http://dx.doi.org/10.3390/s23063166.

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In this work, enzymatic doped/undoped poly-silicon nanowire sensors with different lengths were fabricated using a top-down technique to measure glucose concentration. The sensitivity and resolution of these sensors correlate well with the dopant property and length of nanowire. Experimental results indicate that the resolution is proportional to the nanowire length and dopant concentration. However, the sensitivity is inversely proportional to the nanowire length. The optimum resolution can be better than 0.02 mg/dL for a doped type sensor with length of 3.5 μm. Furthermore, the proposed sensor was demonstrated for 30 applications with similar current-time response and showed good repeatability.
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Huang, Menglin, He Li et Shiyou Chen. « Triple‐Site Dopant–Defect Complexes in Mg–H‐Codoped GaN : First‐Principles Identification ». physica status solidi (a) 218, no 7 (février 2021) : 2000723. http://dx.doi.org/10.1002/pssa.202000723.

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Xu Bo, Yu Qing-Xuan, Wu Qi-Hong, Liao Yuan, Wang Guan-Zhong et Fang Rong-Chuan. « Effects of strain and Mg-dopant on the photoluminescencespectra in p-type GaN ». Acta Physica Sinica 53, no 1 (2004) : 204. http://dx.doi.org/10.7498/aps.53.204.

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Alsawalha, Ayman, Abdalaziz A. Almulhem et A. Sedky. « The Influence of Cu and Mg Dopant on the Microwave Properties of PVC ». Ferroelectrics 386, no 1 (12 août 2009) : 118–24. http://dx.doi.org/10.1080/00150190902961850.

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Alsawalha, Ayman, Abdalaziz A. Almulhem et A. Sedky. « The Influence of Cu and Mg Dopant on the Microwave Properties of PVC ». Ferroelectrics 387, no 1 (30 septembre 2009) : 147–53. http://dx.doi.org/10.1080/00150190902966677.

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Schmeits, M., N. D. Nguyen et M. Germain. « Competition between deep impurity and dopant behavior of Mg in GaN Schottky diodes ». Journal of Applied Physics 89, no 3 (2001) : 1890. http://dx.doi.org/10.1063/1.1339208.

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46

Rohayati, Zaina, Eko Sri Kunarti et Bambang Rusdiarso. « Synthesis of Magnetically Separable Fe<sub>3</sub>O<sub>4</sub>/TiO<sub>2</sub>-Ag with Enhanced Photocatalytic Performance under Visible Light for Degradation of Metanil Yellow ». Key Engineering Materials 949 (26 juillet 2023) : 131–42. http://dx.doi.org/10.4028/p-awq1lx.

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Synthesis of magnetic photocatalyst, Fe3O4/TiO2-Ag, with characterization and photoactivity examination have been investigated. The synthesis was initiated by preparation of Fe3O4 particles using coprecipitation method. The Fe3O4 particles were then coated with TiO2-Ag, weight ratios of concentrations Silver dopant were varied from 1 to 3, 5 and 7 wt%. The Fe3O4/TiO2-Ag was characterized by FTIR, XRD, TEM, SEM-EDX, DR UV-visible and VSM methods. The degradation of metanil yellow solution was performed under exposure to UV, visible light and dark condition at optimum condition. The Fe3O4 and anatase diffraction peaks were presence on the X-ray diffractogram. The Fe3O4/TiO2-Ag was responsive to visible light, according to DR UV-Vis spectra. The Fe3O4/TiO2-Ag band gap energy was 2.49, 2.30, 2.00, and 2.46 eV, respectively, with dopant concentrations of 1; 3; 5; and 7%. Metanil yellow solution can be photodegraded for 180 minutes at a pH of 2.3. The Fe3O4/TiO2-Ag has the highest ability to metanil yellow photodegradation with dopant concentration of 5% gave degradation yield of 82.18% and 72.53% under UV and visible irradiation, respectively. With K values of 0.52 g mg-1 min-1 under visible light and 0.5255 g mg-1 min-1 under UV light, the degradation kinetics of methanyl yellow dye followed Ho and McKay's kinetic model. The Fe3O4/TiO2-Ag material exhibited magnetic characteristics that could be applied under visible light and reused.
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Dyartanti, Endah Retno, Agnestasia Milenia Putri Kurniawan et Arifiah Muflikhati Putri. « Synthesis of Fe/Mg-doped NMC6 22 from Spent Nickel Catalyst as Lithium-Ion Battery Cathode ». E3S Web of Conferences 481 (2024) : 01006. http://dx.doi.org/10.1051/e3sconf/202448101006.

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The co-precipitation approach, along with nickel-rich (NMC622) cathode materials, magnesium, and Fe doping, was used to produce nickel-rich NMC (NMC622) cathode materials from spent nickel catalysts. Both X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) were utilized in order to carry out the characterization of the NMC622 materials. The structural study showed that the doped materials had a structure that was equal to that of Li[Ni0,6Mn0,2Co0,2Xy]O2, which has a layered hexagonal structure similar to that of α-NaFeO2. The electrochemical test found that Mg 1 mol% had the highest discharge capacity at 99.61 mAh/g. This was determined by the results of the test. The use of magnesium as a dopant in structurally stable, Ni-rich NMC materials led to an increase in the electrochemical capacity of the Mg-doped NMC. Magnesium exhibited a significant amount of potential as a dopant. It is necessary to do additional research into the functional testing of magnesium as a doping material in order to maximize its use for a longer cycle life and improved thermal stability lithium ion batteries.
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Chu, Ke, Ya-ping Liu, Yong-hua Cheng et Qing-qing Li. « Synergistic boron-dopants and boron-induced oxygen vacancies in MnO2 nanosheets to promote electrocatalytic nitrogen reduction ». Journal of Materials Chemistry A 8, no 10 (2020) : 5200–5208. http://dx.doi.org/10.1039/d0ta00220h.

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The synergistic effect of B-dopants and B-dopant-induced O-vacancies led to the significantly enhanced NRR activity of MnO2 nanosheets with an NH3 yield of 54.2 μg h−1 mg−1 (−0.4 V) and a faradaic efficiency of 16.8% (−0.2 V).
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Zulfia, Anne. « Al-Si/SiC Metal Matrix Composites Produced by Spontaneous Infiltration ». Advanced Materials Research 277 (juillet 2011) : 21–26. http://dx.doi.org/10.4028/www.scientific.net/amr.277.21.

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Aluminium Silicon reinforced with 50Vf% SiC has been produced by spontaneous infiltration at 900°C for 1 hour. Aluminium infiltrated preforms containing 1%wt Mg mixed with various of Si between 2 and 14wt%, as external dopant. However Al did not infiltrate a preform containing 1wt%Mg but if mixed with Si in the preform generated in more extensive infiltration. Effect of Si on characterisation of pure Al composites by spontaneous infiltration were studied and compared to Al-Si based matrix. Microstructural analysis of MMC as well as mechanical properties were also observed. It was found that increasing of Si content generated lower porosity thus increasing hardness due to aluminium could wet SiC preform well. Although the dopant was uniformly distributed throughout the perform but microstructural analysis and hardness measurements indicate that the resultant composite may not be uniform as infiltration inwards from the top to the bottom of preform.The hardness of Al-Si composites is significantly increased with increasing of Si for both externally and internally doped system. This is associated with decreasing porosity with higher Si in composites.
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Senevirathna, M. K. Indika, Michael D. Williams, Graham A. Cooke, Alexander Kozhanov, Mark Vernon et Garnett B. Cross. « Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS ». Journal of Vacuum Science & ; Technology B 38, no 3 (mai 2020) : 034015. http://dx.doi.org/10.1116/1.5144500.

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