Littérature scientifique sur le sujet « Mg-Dopant »
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Articles de revues sur le sujet "Mg-Dopant"
Yamashita, Yoshiyuki, Jingmin Tang, Yusuke Hashimote et Tomohiro Matsushita. « Atomic Structures and Chemical states of active and inactive dopants in GaN ». ECS Transactions 112, no 2 (29 septembre 2023) : 67–75. http://dx.doi.org/10.1149/11202.0067ecst.
Texte intégralSiladie, Alexandra-Madalina, Lynda Amichi, Nicolas Mollard, Isabelle Mouton, Bastien Bonef, Catherine Bougerol, Adeline Grenier et al. « Dopant radial inhomogeneity in Mg-doped GaN nanowires ». Nanotechnology 29, no 25 (25 avril 2018) : 255706. http://dx.doi.org/10.1088/1361-6528/aabbd6.
Texte intégralHuang, Xiaopeng, Feng Liang, Yuanchao Du, Keyu Zhang, Yaochun Yao et Yongnian Dai. « Optimization of the Process Parameters for the Synthesis of LiFe1−x−yMgxTiyPO4/C Cathode Material Using Response Surface Methodology ». Nano 11, no 11 (20 octobre 2016) : 1650122. http://dx.doi.org/10.1142/s1793292016501228.
Texte intégralSchmidt, Th, M. Siebert, J. I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T. L. Lee et al. « Mg and Si dopant incorporation and segregation in GaN ». physica status solidi (b) 248, no 8 (7 mars 2011) : 1810–21. http://dx.doi.org/10.1002/pssb.201046531.
Texte intégralWinda Rahmalia, Intan Syahbanu, Nurlina, Ayu Widya Sari et Septiani. « Synthesis of Mg-doped TiO2 Using a Hydrothermal Method as Photoanode on Bixin-Sensitized Solar Cell ». Jurnal Riset Kimia 14, no 2 (17 octobre 2023) : 198–208. http://dx.doi.org/10.25077/jrk.v14i2.622.
Texte intégralKushwaha, Amanendra K., Manoranjan Misra et Pradeep L. Menezes. « Effect of Magnesium Dopant on the Grain Boundary Stability of Nanocrystalline Aluminum Powders during Cryomilling ». Crystals 13, no 3 (21 mars 2023) : 541. http://dx.doi.org/10.3390/cryst13030541.
Texte intégralAhmed, Duha S., Noor Q. Ali et Ali A. Taha. « The Variation Effect of Mg-doped NPs Prepared by Sol-Gel Method on its Structural Properties and Biological Activities ». Journal of Physics : Conference Series 2114, no 1 (1 décembre 2021) : 012004. http://dx.doi.org/10.1088/1742-6596/2114/1/012004.
Texte intégralLi, Jinchai, et Junyong Kang. « Band engineering in Al0.5Ga0.5N∕GaN superlattice by modulating Mg dopant ». Applied Physics Letters 91, no 15 (8 octobre 2007) : 152106. http://dx.doi.org/10.1063/1.2798589.
Texte intégralGrillot, P. N., S. A. Stockman, J. W. Huang et Y. L. Chang. « Dopant interactions and Mg segregation in (AlxGa1−x)0.5In0.5P heterostructures ». Physica B : Condensed Matter 308-310 (décembre 2001) : 888–90. http://dx.doi.org/10.1016/s0921-4526(01)00950-4.
Texte intégralJain, P., J. Lang, N. Y. Skryabina, D. Fruchart, S. F. Santos, K. Binder, T. Klassen et J. Huot. « MgH2 as dopant for improved activation of commercial Mg ingot ». Journal of Alloys and Compounds 575 (octobre 2013) : 364–69. http://dx.doi.org/10.1016/j.jallcom.2013.05.099.
Texte intégralThèses sur le sujet "Mg-Dopant"
Mballo, Adama. « Détecteurs de neutrons à base de nitrure de bore et ses alliages ». Electronic Thesis or Diss., Université de Lorraine, 2021. http://www.theses.fr/2021LORR0236.
Texte intégralNeutron detectors play a crucial role in various applications such as homeland security (airports, borders and ports) to control illegal activities involving nuclear materials, nuclear power plants for neutron radiation safety and monitoring, high energy physics and nuclear science. In addition, recent events such as the Fukushima explosion and the polonium poisoning have stimulated interest in the development of small, portable and low-cost solid-state neutron detectors (SSND). To achieve high efficiency in SSND factors such as neutron absorption and charge collection are critical.The general objective of this work is to develop efficient solid-state thermal neutron detectors based on boron containing III-nitride materials such as boron nitride (BN) and boron-gallium nitride (BGaN). Boron in these materials is very important for the detection of thermal neutrons due to the high neutron capture cross section of the isotope boron-10 (10B) and its low sensitivity to gamma radiation. However, the main challenge with boron containing III-N for neutron detection is the quality of the materials. For instance, growth of thick, high quality single crystalline boron-rich BGaN needed for neutron detectors is difficult due to strain-induced degradations such as phase separation and columnar 3D growth. Therefore, we developed an innovative approach consisting of BGaN/GaN superlattices (SLs) with a nominal boron content of 3% in the BGaN layer. These BGaN/GaN SLs materials were used to fabricate metal-semiconductor-metal (MSM) and p-i-n heterojunction devices, which showed significant neutron-induced signal. Even with this approach, it is found that there are several constraints on the boron content, the quality of the material, and the overall thickness, which are key factors for the realization of high-efficiency neutron detectors.By using binary BN (100% boron) epitaxial layers, higher thermal neutron absorption and performance of neutron detectors are expected. Our group has reported for the first time large area 2D layered h-BN films with high crystalline quality on sapphire substrate by metal organic vapor phase epitaxy (MOVPE). These BN films were used to demonstrate high efficiency deep UV photodetectors. In this work, we have grown up to 2.5µm thick natural and 10B enriched BN samples and used them to fabricate MSM based detectors. The advantages of MSM structures are the ability to achieve self-powered operation, similar to that demonstrated for UV photodetectors, and to benefit from internal gain in order to increase the neutron signal.This work also aims to investigate the control of the electrical conductivity of h-BN by in-situ Mg doping for the future realization of p-n based BN neutron detectors. Since a high boron content is highly desirable for neutron detectors, we have further explored experimentally for the first time a new material: boron-rich BAlN alloys
Chapitres de livres sur le sujet "Mg-Dopant"
C.A. Silva, Anielle, Eliete A. Alvin, Francisco R.A. dos Santos, Samanta L.M. de Matos, Jerusa M. de Oliveira, Alessandra S. Silva, Éder V. Guimarães et al. « Doped Semiconductor Nanocrystals : Development and Applications ». Dans Nanocrystals [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96753.
Texte intégralGanas, George, George Karagiannakis, Aitor Eguia-Barrio, Miguel Bengoechea, Iratxe de Meatza et Georgia Kastrinaki. « Aerosol Spray Pyrolysis Synthesis of Doped LiNi0.5Mn1.5O4 Cathode Materials for Next Generation Lithium-Ion Batteries ». Dans Recent Perspectives in Pyrolysis Research. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.100406.
Texte intégralActes de conférences sur le sujet "Mg-Dopant"
Yamoah, Nana Kwame, Timothy Moses et Dhananjay Kumar. « Corrosion Behavior of Tricalcium Phosphate Doped With Different Compositions of Silver ». Dans ASME 2015 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/imece2015-51748.
Texte intégralFouchier, Marc, Christian Monachon et Matthew Davies. « GaN Epitaxial Defects Characterization Using Cathodoluminescence Spectroscopy ». Dans ISTFA 2023. ASM International, 2023. http://dx.doi.org/10.31399/asm.cp.istfa2023p0463.
Texte intégralRitonga, Wahyu Azhar, Timbangen Sembiring, Muhammad Zaini Afdlan, Kerista Sebayang, Susilawati, Hariyati Lubis, Agung Imaduddin, Hilda Ayu Marlina et Cindy Alkindi. « Effect of dopant on superconductor Bi1.6Pb0.4Sr2Ca2-x MxCu3Oy (M = Ce, Na, Mg) phase 2223 by solid method ». Dans THE 1ST INTERNATIONAL CONFERENCE ON PHYSICS AND APPLIED PHYSICS (THE 1ST ICP&AP) 2019 : Fundamental and Innovative Research for Improving Competitive Dignified Nation and Industrial Revolution 4.0. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0003934.
Texte intégralAleksandrovski, A. L., et I. I. Naumova. « Bulk crystals of ferroelectric niobates with periodic domain pattern ». Dans The European Conference on Lasers and Electro-Optics. Washington, D.C. : Optica Publishing Group, 1994. http://dx.doi.org/10.1364/cleo_europe.1994.cwf49.
Texte intégralFen, Tang Xiao, Ari Legowo, Ali Shaitir et Agus Geter Edy Sutjipto. « Study on the Effect of Mg Dopant on the Properties of ZnO Thin Film Prepared by Sol Gel ». Dans 2019 Advances in Science and Engineering Technology International Conferences (ASET). IEEE, 2019. http://dx.doi.org/10.1109/icaset.2019.8714394.
Texte intégralMalek, M. F., M. Alfah, Z. Khusaimi, M. H. Mamat, M. Z. Sahdan, M. Rusop, Mohamad Rusop et Tetsuo Soga. « Effect of Mg Dopant Percentage on the Photoluminescence Property of Nano-Structured ZnO Thin Films Deposited on Si Substrate ». Dans NANOSCIENCE AND NANOTECHNOLOGY : International Conference on Nanoscience and Nanotechnology—2008. AIP, 2009. http://dx.doi.org/10.1063/1.3160218.
Texte intégralChoi, Ju H., Frank G. Shi, Alfred A. Margaryan, Ashot Margaryan et T. G. Nieh. « Dopant and concentration dependence of linear and nonlinear refractive index and dispersion for new (Mg, Ba)F 2 based fluorophosphates glass ». Dans High-Power Lasers and Applications, sous la direction de Yehoshua Y. Kalisky. SPIE, 2003. http://dx.doi.org/10.1117/12.479168.
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